JP4361145B2 - 不揮発性メモリ及び電子機器 - Google Patents

不揮発性メモリ及び電子機器 Download PDF

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Publication number
JP4361145B2
JP4361145B2 JP34075497A JP34075497A JP4361145B2 JP 4361145 B2 JP4361145 B2 JP 4361145B2 JP 34075497 A JP34075497 A JP 34075497A JP 34075497 A JP34075497 A JP 34075497A JP 4361145 B2 JP4361145 B2 JP 4361145B2
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JP
Japan
Prior art keywords
region
impurity
oxide film
film
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP34075497A
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English (en)
Japanese (ja)
Other versions
JPH11163172A (ja
JPH11163172A5 (enExample
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP34075497A priority Critical patent/JP4361145B2/ja
Priority to US09/192,745 priority patent/US6686623B2/en
Publication of JPH11163172A publication Critical patent/JPH11163172A/ja
Priority to US10/694,477 priority patent/US7535053B2/en
Publication of JPH11163172A5 publication Critical patent/JPH11163172A5/ja
Priority to US12/427,140 priority patent/US8222696B2/en
Application granted granted Critical
Publication of JP4361145B2 publication Critical patent/JP4361145B2/ja
Priority to US13/549,914 priority patent/US8482069B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Non-Volatile Memory (AREA)
JP34075497A 1997-11-18 1997-11-26 不揮発性メモリ及び電子機器 Expired - Fee Related JP4361145B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP34075497A JP4361145B2 (ja) 1997-11-26 1997-11-26 不揮発性メモリ及び電子機器
US09/192,745 US6686623B2 (en) 1997-11-18 1998-11-16 Nonvolatile memory and electronic apparatus
US10/694,477 US7535053B2 (en) 1997-11-18 2003-10-27 Nonvolatile memory and electronic apparatus
US12/427,140 US8222696B2 (en) 1997-11-18 2009-04-21 Semiconductor device having buried oxide film
US13/549,914 US8482069B2 (en) 1997-11-18 2012-07-16 Nonvolatile memory and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34075497A JP4361145B2 (ja) 1997-11-26 1997-11-26 不揮発性メモリ及び電子機器

Publications (3)

Publication Number Publication Date
JPH11163172A JPH11163172A (ja) 1999-06-18
JPH11163172A5 JPH11163172A5 (enExample) 2005-06-23
JP4361145B2 true JP4361145B2 (ja) 2009-11-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP34075497A Expired - Fee Related JP4361145B2 (ja) 1997-11-18 1997-11-26 不揮発性メモリ及び電子機器

Country Status (1)

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JP (1) JP4361145B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724037B2 (en) 2000-07-21 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
CN115425090B (zh) * 2022-08-30 2026-02-10 武汉华星光电技术有限公司 薄膜晶体管及其电子器件

Also Published As

Publication number Publication date
JPH11163172A (ja) 1999-06-18

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