JP4357844B2 - 電磁波検出器 - Google Patents

電磁波検出器 Download PDF

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Publication number
JP4357844B2
JP4357844B2 JP2003005051A JP2003005051A JP4357844B2 JP 4357844 B2 JP4357844 B2 JP 4357844B2 JP 2003005051 A JP2003005051 A JP 2003005051A JP 2003005051 A JP2003005051 A JP 2003005051A JP 4357844 B2 JP4357844 B2 JP 4357844B2
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Japan
Prior art keywords
electromagnetic wave
active matrix
wave detector
light
signal line
Prior art date
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Expired - Fee Related
Application number
JP2003005051A
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English (en)
Japanese (ja)
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JP2004221207A (ja
JP2004221207A5 (enExample
Inventor
良弘 和泉
賢治 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Sharp Corp
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Shimadzu Corp
Sharp Corp
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Publication date
Application filed by Shimadzu Corp, Sharp Corp filed Critical Shimadzu Corp
Priority to JP2003005051A priority Critical patent/JP4357844B2/ja
Publication of JP2004221207A publication Critical patent/JP2004221207A/ja
Publication of JP2004221207A5 publication Critical patent/JP2004221207A5/ja
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Publication of JP4357844B2 publication Critical patent/JP4357844B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP2003005051A 2003-01-10 2003-01-10 電磁波検出器 Expired - Fee Related JP4357844B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003005051A JP4357844B2 (ja) 2003-01-10 2003-01-10 電磁波検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003005051A JP4357844B2 (ja) 2003-01-10 2003-01-10 電磁波検出器

Publications (3)

Publication Number Publication Date
JP2004221207A JP2004221207A (ja) 2004-08-05
JP2004221207A5 JP2004221207A5 (enExample) 2006-03-23
JP4357844B2 true JP4357844B2 (ja) 2009-11-04

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ID=32895820

Family Applications (1)

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JP2003005051A Expired - Fee Related JP4357844B2 (ja) 2003-01-10 2003-01-10 電磁波検出器

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JP (1) JP4357844B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101517623B (zh) 2006-09-29 2013-05-22 夏普株式会社 显示装置、显示装置的制造方法
JP2008244070A (ja) * 2007-03-27 2008-10-09 Fujifilm Corp 放射線検出器
WO2008136150A1 (ja) 2007-04-23 2008-11-13 Sharp Kabushiki Kaisha 表示装置、表示装置の製造方法
JP2009038123A (ja) * 2007-07-31 2009-02-19 Fujifilm Corp 画像検出装置
US9312156B2 (en) 2009-03-27 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5467846B2 (ja) * 2009-11-20 2014-04-09 富士フイルム株式会社 放射線検出素子
JP6164924B2 (ja) * 2013-05-15 2017-07-19 キヤノン株式会社 検出装置、及び、検出システム

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Publication number Publication date
JP2004221207A (ja) 2004-08-05

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