JP4329800B2 - Solid electrolytic capacitor and manufacturing method thereof - Google Patents

Solid electrolytic capacitor and manufacturing method thereof Download PDF

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JP4329800B2
JP4329800B2 JP2006268537A JP2006268537A JP4329800B2 JP 4329800 B2 JP4329800 B2 JP 4329800B2 JP 2006268537 A JP2006268537 A JP 2006268537A JP 2006268537 A JP2006268537 A JP 2006268537A JP 4329800 B2 JP4329800 B2 JP 4329800B2
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cathode foil
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electrolytic capacitor
solid electrolytic
vapor deposition
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一徳 奈良谷
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Nippon Chemi Con Corp
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本発明は固体電解コンデンサ及びその製造方法に係り、特に、等価直列抵抗(以下、ESRという)の低減を図り、コンデンサの小型化を可能とするために、容量出現率の向上を図るべく改良を施した固体電解コンデンサ及びその製造方法に関する。   The present invention relates to a solid electrolytic capacitor and a method for manufacturing the same, and in particular, in order to reduce equivalent series resistance (hereinafter referred to as ESR) and to enable downsizing of the capacitor, the improvement is made to improve the capacity appearance rate. The present invention relates to an applied solid electrolytic capacitor and a manufacturing method thereof.

タンタルあるいはアルミニウム等のような弁作用を有する金属を利用した電解コンデンサは、陽極側対向電極としての弁作用金属を焼結体あるいはエッチング箔等の形状にして誘電体を拡面化することにより、小型で大きな容量を得ることができることから、広く一般に用いられている。特に、電解質に固体電解質を用いた固体電解コンデンサは、小型、大容量、低等価直列抵抗であることに加えて、チップ化しやすく、表面実装に適している等の特質を備えていることから、電子機器の小型化、高機能化、低コスト化に欠かせないものとなっている。   An electrolytic capacitor using a metal having a valve action such as tantalum or aluminum is obtained by expanding the dielectric by making the valve action metal as the anode-side counter electrode into the shape of a sintered body or an etching foil. Since it is small and a large capacity can be obtained, it is widely used. In particular, a solid electrolytic capacitor using a solid electrolyte as an electrolyte has features such as small size, large capacity, low equivalent series resistance, easy to chip, and suitable for surface mounting. It is indispensable for miniaturization, high functionality and low cost of electronic equipment.

この種の固体電解コンデンサにおいて、小型、大容量用途としては、一般に、アルミニウム等の弁作用金属からなる陽極箔と陰極箔をセパレータを介在させて巻回してコンデンサ素子を形成し、このコンデンサ素子に駆動用電解液を含浸し、アルミニウム等の金属製ケースや合成樹脂製のケースにコンデンサ素子を収納し、密閉した構造を有している。なお、陽極材料としては、アルミニウムを初めとしてタンタル、ニオブ、チタン等が使用され、陰極材料には、陽極材料と同種の金属が用いられる。   In this type of solid electrolytic capacitor, as a small-sized and large-capacity application, an anode foil and a cathode foil made of a valve metal such as aluminum are generally wound with a separator interposed therebetween to form a capacitor element. It is impregnated with a driving electrolyte, and has a sealed structure in which a capacitor element is housed in a metal case such as aluminum or a case made of synthetic resin. As the anode material, aluminum, tantalum, niobium, titanium and the like are used, and as the cathode material, the same kind of metal as the anode material is used.

ところで、電解コンデンサの静電容量を増大させるためには、陽極材料と共に陰極材料の静電容量を向上させることが重要である。電解コンデンサにおける各電極の静電容量は、電極表面に薄く形成される絶縁膜の種類、厚さ及び電極の表面積等に左右されるものであり、絶縁膜の誘電率をε、絶縁膜の厚さをt、電極の表面積をAとするとき、静電容量Cは次式で表される。   By the way, in order to increase the capacitance of the electrolytic capacitor, it is important to improve the capacitance of the cathode material together with the anode material. The capacitance of each electrode in an electrolytic capacitor depends on the type and thickness of the insulating film formed thinly on the electrode surface, the surface area of the electrode, etc., and the dielectric constant of the insulating film is ε and the thickness of the insulating film When the thickness is t and the surface area of the electrode is A, the capacitance C is expressed by the following equation.

C=ε(A/t)
この式から明らかなように、静電容量の増大を図るためには、電極表面積の拡大、高誘電率を有する絶縁膜材料の選択、絶縁膜の薄膜化が有効である。これらのうち、電極表面積の拡大を図るべく単純に大きな電極を用いることは、電解コンデンサの大型化を招くだけなので好ましくない。そのため、従来から、電極材料の基材であるアルミニウム箔の表面にエッチング処理を施して凹凸を形成することにより、実質的な表面積を拡大することが行われている。
C = ε (A / t)
As is apparent from this equation, in order to increase the capacitance, it is effective to increase the electrode surface area, select an insulating film material having a high dielectric constant, and reduce the thickness of the insulating film. Of these, it is not preferable to simply use a large electrode in order to increase the electrode surface area, because it only increases the size of the electrolytic capacitor. Therefore, conventionally, the surface area of the aluminum foil that is the base material of the electrode material is etched to form irregularities, thereby increasing the substantial surface area.

また、特許文献1には、上記エッチング処理に変わるものとして、金属蒸着の技術を利用することにより、基材表面に金属皮膜を形成してなる陰極材料が開示されている。この技術によれば、皮膜形成条件を選択することにより、皮膜表面に微細な凹凸を形成して表面積を拡大し、大きな静電容量を得ることができるとされている。また、上記金属皮膜として、酸化物となった際に高い誘電率を示すTi等の金属を用いれば、陰極材料表面に形成される絶縁膜の誘電率を高めて、より大きな静電容量を得ることができることが示されている。   Further, Patent Document 1 discloses a cathode material obtained by forming a metal film on the surface of a base material by using a metal vapor deposition technique as an alternative to the above etching process. According to this technique, it is said that by selecting the film forming conditions, fine irregularities can be formed on the surface of the film to increase the surface area and to obtain a large capacitance. In addition, if a metal such as Ti, which shows a high dielectric constant when it becomes an oxide, is used as the metal film, the dielectric constant of the insulating film formed on the surface of the cathode material is increased to obtain a larger capacitance. It has been shown that it can.

さらに、本出願人が先に出願した特許文献2には、電解コンデンサの静電容量が、陽極側の静電容量と陰極側の静電容量とが直列に接続された合成容量となることに鑑み、陰極側の静電容量値を高くするために、陰極用電極に用いられる高純度アルミニウム表面にチタンの窒化物からなる蒸着層を陰極アーク蒸着法によって形成する技術が示されている。
特開昭59−167009号 特開平3−150825号
Further, in Patent Document 2 filed earlier by the present applicant, the capacitance of the electrolytic capacitor is a combined capacitance in which the anode side capacitance and the cathode side capacitance are connected in series. In view of this, in order to increase the capacitance value on the cathode side, a technique of forming a vapor deposition layer made of titanium nitride on a high-purity aluminum surface used for a cathode electrode by a cathode arc vapor deposition method is shown.
JP 59-167209 A JP-A-3-150825

しかしながら、上述したような従来の技術によって形成した陰極箔を用いた固体電解コンデンサには、以下に述べるような問題点があった。すなわち、従来の固体電解コンデンサにおいては、電解コンデンサの静電容量を高めるために、電極材料の基材であるアルミニウム箔の表面にエッチング処理を施しているが、エッチングが過大になるとアルミニウム箔表面の溶解が同時に進行し、却って拡面率の増大を妨げることなどの理由から、エッチング技術による電極材料の静電容量の増大化には限界があった。   However, the solid electrolytic capacitor using the cathode foil formed by the conventional technique as described above has the following problems. That is, in the conventional solid electrolytic capacitor, in order to increase the capacitance of the electrolytic capacitor, the surface of the aluminum foil that is the base material of the electrode material is subjected to etching treatment. The increase in the capacitance of the electrode material by the etching technique has a limit because the dissolution proceeds simultaneously and the increase in the area expansion rate is hindered.

また、従来、固体電解コンデンサの固体電解質には、主に硝酸マンガンの熱分解により形成される二酸化マンガンが用いられていたが、この二酸化マンガンは導電率が比較的高いため、コンデンサとしてのESRの低減には限度があった。さらに、二酸化マンガンの形成工程で、200〜300℃の熱処理を数回行わなければならないため、陰極箔の表面に形成された金属窒化物からなる皮膜の表面に酸化皮膜が形成され、そのため陰極箔の静電容量が低下し、ひいては電解コンデンサの静電容量を低下させる原因となっていた。   Conventionally, manganese dioxide formed mainly by thermal decomposition of manganese nitrate has been used as the solid electrolyte of the solid electrolytic capacitor. However, since this manganese dioxide has a relatively high conductivity, There was a limit to the reduction. Furthermore, in the step of forming manganese dioxide, heat treatment at 200 to 300 ° C. must be performed several times, so that an oxide film is formed on the surface of the film made of metal nitride formed on the surface of the cathode foil. As a result, the electrostatic capacity of the electrolytic capacitor is reduced, and as a result, the electrostatic capacity of the electrolytic capacitor is reduced.

本発明は、上述したような従来技術の問題点を解決するために提案されたものであり、その目的は、ESRの低減を図り、容量出現率の向上を可能とした固体電解コンデンサ及びその製造方法を提供することにある。   The present invention has been proposed in order to solve the above-described problems of the prior art, and its object is to reduce the ESR and to improve the capacity appearance rate and to produce the same. It is to provide a method.

本発明者は、上記課題を解決すべく、ESRの低減を図り、容量出現率を向上させることができる固体電解コンデンサ及びその製造方法について鋭意検討を重ねた結果、本発明を完成するに至ったものである。すなわち、電解質層として導電性ポリマーあるいは二酸化鉛を用いた巻回型の固体電解コンデンサにおいて、陰極箔の表面に化成皮膜を形成し、さらにその上に蒸着法によって金属窒化物からなる皮膜を形成することによって、ESRの低減と容量出現率の向上が可能となることが判明したものである。   In order to solve the above-mentioned problems, the present inventor has intensively studied a solid electrolytic capacitor capable of reducing ESR and improving the capacity appearance rate and a method for manufacturing the same, and has completed the present invention. Is. That is, in a winding type solid electrolytic capacitor using a conductive polymer or lead dioxide as an electrolyte layer, a chemical conversion film is formed on the surface of the cathode foil, and a film made of a metal nitride is formed thereon by vapor deposition. Thus, it has been found that the ESR can be reduced and the capacity appearance rate can be improved.

まず、本発明者は、電解質層として、近年着目されるようになった電導度が高く、誘電体皮膜との付着性の良い導電性ポリマーを用いた巻回型の固体電解コンデンサについて、種々の検討を行った。なお、この導電性ポリマーの代表例としては、ポリエチレンジオキシチオフェン(以下、PEDTと記す)、ポリピロール、ポリアニリン、TCNQ(7,7,8,8−テトラシアノキノジメタン)もしくはこれらの誘電体等が知られている。さらに、無機系の導電性化合物として知られている二酸化鉛を用いた巻回型の固体電解コンデンサについても、種々の検討を行った。   First, the present inventor has disclosed various types of wound solid electrolytic capacitors using a conductive polymer that has been attracting attention in recent years as an electrolyte layer and has high conductivity and good adhesion to a dielectric film. Study was carried out. Typical examples of the conductive polymer include polyethylene dioxythiophene (hereinafter referred to as PEDT), polypyrrole, polyaniline, TCNQ (7,7,8,8-tetracyanoquinodimethane), or dielectrics thereof. It has been known. Furthermore, various studies were also conducted on a wound-type solid electrolytic capacitor using lead dioxide, which is known as an inorganic conductive compound.

また、本発明者は、種々の化成電圧の下、陰極箔に化成皮膜を形成し、さらにその上にTiNを蒸着形成し、この陰極箔を用いて後述する条件下でコンデンサを作成し、陰極箔のみの容量を測定したところ、その容量は無限大となった。すなわち、化成皮膜の上に形成されたTiNが、陰極箔の表面に形成された化成皮膜の一部を除去し、TiNと陰極箔金属が導通していることが判明した。ところで、電解コンデンサの静電容量Cが、陽極側の静電容量Ca と陰極側の静電容量Cc とが直列に接続された合成容量となることは、次式により表される。

Figure 0004329800
上式より明らかなように、Cc が値を持つ(陰極箔が容量を持つ)限り、コンデンサの容量Cは陽極側の静電容量Ca より小さくなる。言い換えれば、本発明のように陰極箔表面に蒸着したTiNと陰極箔金属とが導通して陰極箔の容量Ccが無限大となった場合には、陰極箔の容量成分がなくなり、陽極箔と陰極箔の直列接続の合成容量であるコンデンサの容量Cは陽極側の静電容量Ca と等しくなって、最大となる。 In addition, the present inventor forms a conversion film on the cathode foil under various conversion voltages, further deposits TiN on the cathode foil, and uses this cathode foil to produce a capacitor under the conditions described later, When the capacity of the foil alone was measured, the capacity was infinite. That is, it was found that TiN formed on the chemical conversion film removed a part of the chemical conversion film formed on the surface of the cathode foil, and that TiN and the cathode foil metal were conductive. By the way, the fact that the electrostatic capacity C of the electrolytic capacitor becomes a combined capacity in which the anode-side electrostatic capacity Ca and the cathode-side electrostatic capacity Cc are connected in series is expressed by the following equation.
Figure 0004329800
As is apparent from the above equation, as long as Cc has a value (the cathode foil has a capacitance), the capacitance C of the capacitor is smaller than the capacitance Ca on the anode side. In other words, when TiN deposited on the surface of the cathode foil and the cathode foil metal are conducted as in the present invention and the capacity Cc of the cathode foil becomes infinite, the capacity component of the cathode foil disappears, and the anode foil and The capacitance C of the capacitor, which is the combined capacitance of the cathode foils connected in series, becomes equal to the capacitance Ca on the anode side and becomes the maximum.

なお、金属窒化物としては、表面に酸化皮膜が形成されにくい、TiN、ZrN、TaN、NbN等を用いることができる。また、陰極の表面に形成する皮膜は金属窒化物に限らず、皮膜を形成することができ、且つ酸化することの少ない導電性材料であれば、他の材質でも良い。例えば、Ti、Zr、Ta、Nb等を用いることができる。   As the metal nitride, TiN, ZrN, TaN, NbN, or the like that is difficult to form an oxide film on the surface can be used. The film formed on the surface of the cathode is not limited to a metal nitride, and any other material may be used as long as it can form a film and does not oxidize. For example, Ti, Zr, Ta, Nb, etc. can be used.

また、弁金属からなる陰極に金属窒化物からなる皮膜を形成する方法としては、形成される皮膜の強度、陰極との密着性、成膜条件の制御等を考慮すると、蒸着法が好ましく、なかでも、陰極アークプラズマ蒸着法がより好ましい。この陰極アークプラズマ蒸着法の適用条件は以下の通りである。すなわち、電流値は80〜300A、電圧値は15〜20Vである。なお、金属窒化物の場合は、弁金属からなる陰極を200〜450℃に加熱し、窒素を含む全圧が1×10−1〜1×10−4Torrの雰囲気で行う。 In addition, as a method for forming a film made of metal nitride on the cathode made of valve metal, the vapor deposition method is preferable in consideration of the strength of the formed film, adhesion to the cathode, control of film forming conditions, etc. However, the cathodic arc plasma deposition method is more preferable. The application conditions of this cathodic arc plasma deposition method are as follows. That is, the current value is 80 to 300 A, and the voltage value is 15 to 20V. In the case of metal nitride, the cathode made of the valve metal is heated to 200 to 450 ° C., and the total pressure including nitrogen is 1 × 10 −1 to 1 × 10 −4 Torr.

また、陰極箔の表面に化成皮膜を形成するために印加する化成電圧は、10V以下であることが望ましい。その理由は、化成電圧が10V以上であると、陰極箔の表面に形成される化成皮膜の厚みが増して陰極箔の静電容量が減少し、陽極箔と陰極箔の合成容量であるコンデンサの容量が減少するからである。   Moreover, it is desirable that the conversion voltage applied to form a conversion coating on the surface of the cathode foil is 10 V or less. The reason is that if the conversion voltage is 10 V or more, the thickness of the conversion coating formed on the surface of the cathode foil increases, the capacitance of the cathode foil decreases, and the capacitance of the capacitor, which is the combined capacity of the anode foil and the cathode foil, This is because the capacity decreases.

さらに、陰極箔の化成液としては、リン酸二水素アンモニウム、リン酸水素二アンモニウム等のリン酸系の化成液、ホウ酸アンモニウム等のホウ酸系の化成液、アジピン酸アンモニウム等のアジピン酸系の化成液等を用いることができるが、なかでもリン酸二水素アンモニウムを用いることが望ましい。なお、リン酸二水素アンモニウムの水溶液の濃度は、0.005〜3%が適している。   Further, as a chemical conversion solution for the cathode foil, a phosphoric acid type chemical conversion solution such as ammonium dihydrogen phosphate and diammonium hydrogen phosphate, a boric acid type chemical conversion solution such as ammonium borate, an adipic acid type such as ammonium adipate, etc. However, it is desirable to use ammonium dihydrogen phosphate. In addition, 0.005-3% is suitable for the density | concentration of the aqueous solution of ammonium dihydrogen phosphate.

また、上述したように、導電性ポリマーとしては、コンデンサの作成過程において高温処理を必要としないPEDT、ポリピロール、ポリアニリン、TCNQもしくはこれらの誘電体等を用いることができるが、なかでも、小型大容量の巻回型のコンデンサにおいては、100℃前後で重合を行うことができ、コンデンサの製造過程において温度管理等が容易で、耐熱性に優れ、単位容積当たりの静電容量が最も大きいPEDTを用いることが望ましい。   In addition, as described above, as the conductive polymer, PEDT, polypyrrole, polyaniline, TCNQ, or a dielectric thereof that does not require high-temperature treatment in the capacitor production process can be used. In the winding type capacitor, PEDT can be polymerized at around 100 ° C., temperature control is easy in the capacitor manufacturing process, heat resistance is excellent, and PEDT having the largest capacitance per unit volume is used. It is desirable.

続いて、電解質層として導電性ポリマーを用いた巻回型の固体電解コンデンサの製造方法について説明する。陽極箔としては、エッチングしたアルミニウム箔の表面に、従来から用いられている方法で化成処理を施して誘電体皮膜を形成したものを用いる。この陽極箔を陰極箔及びセパレータと共に巻回してコンデンサ素子を形成し、エチレンジオキシチオフェン(以下、EDTと記す)をコンデンサ素子に含浸し、さらに40〜60%のパラトルエンスルホン酸第二鉄のブタノール溶液を含浸して、20〜180℃、30分以上加熱する。その後、コンデンサ素子の表面を樹脂で被覆し、エージングを行う。   Then, the manufacturing method of the winding type solid electrolytic capacitor using a conductive polymer as an electrolyte layer is demonstrated. As the anode foil, one obtained by subjecting the surface of an etched aluminum foil to a chemical conversion treatment by a conventionally used method to form a dielectric film is used. This anode foil is wound together with a cathode foil and a separator to form a capacitor element, impregnated with ethylenedioxythiophene (hereinafter referred to as EDT), and further made of 40-60% ferric paratoluenesulfonate. Impregnated with butanol solution and heated at 20 to 180 ° C. for 30 minutes or more. Thereafter, the surface of the capacitor element is covered with a resin, and aging is performed.

ここで、コンデンサ素子に含浸するEDTとしてはEDTモノマーを用いることができるが、EDTと揮発性溶媒とを1:1〜1:3の体積比で混合したモノマー溶液を用いることもできる。また、揮発性溶媒としては、ペンタン等の炭化水素類、テトラヒドロフラン等のエーテル類、ギ酸エチル等のエステル類、アセトン等のケトン類、メタノール等のアルコール類、アセトニトリル等の窒素化合物等を用いることができるが、なかでも、メタノール、エタノール、アセトン等が好ましい。酸化剤としては、ブタノールに溶解したパラトルエンスルホン酸第二鉄を用いる。この場合、ブタノールとパラトルエンスルホン酸第二鉄の比率は任意で良いが、本発明においては40〜60%溶液を用いている。なお、EDTと酸化剤の配合比は1:3〜1:6の範囲が好適である。   Here, an EDT monomer can be used as the EDT impregnated in the capacitor element, but a monomer solution in which EDT and a volatile solvent are mixed at a volume ratio of 1: 1 to 1: 3 can also be used. As the volatile solvent, hydrocarbons such as pentane, ethers such as tetrahydrofuran, esters such as ethyl formate, ketones such as acetone, alcohols such as methanol, nitrogen compounds such as acetonitrile, etc. may be used. Of these, methanol, ethanol, acetone and the like are preferable. As the oxidizing agent, ferric paratoluenesulfonate dissolved in butanol is used. In this case, the ratio of butanol and ferric paratoluenesulfonate may be arbitrary, but in the present invention, a 40 to 60% solution is used. The mixing ratio of EDT and oxidizing agent is preferably in the range of 1: 3 to 1: 6.

また、上述した導電性ポリマーと同様に、低温で半導体層を形成することができる二酸化鉛を用いた巻回型の固体電解コンデンサについても種々の検討を行ったところ、導電性ポリマーからなる電解質層を備えた固体電解コンデンサと同様に、耐電圧特性、漏れ電流特性等が良好で、ESRの低減が可能で、高い容量出現率が得られることが判明した。この二酸化鉛は、高電導性の半導体層を形成するので、低ESR特性を有する固体電解コンデンサを形成することができる。また、二酸化鉛を用いた半導体層は、酢酸鉛を過硫酸アンモニウム等の酸化剤で常温で酸化して形成することができるので、高温で形成する二酸化マンガンに比べて陽極酸化皮膜の損傷が少ないため、耐電圧特性、漏れ電流特性等が良好で、導電性ポリマーと同等の特性を得ることができると考えられる。   In addition, as with the conductive polymer described above, various studies were also conducted on a wound solid electrolytic capacitor using lead dioxide that can form a semiconductor layer at a low temperature. As a result, an electrolyte layer made of a conductive polymer was obtained. As in the case of the solid electrolytic capacitor having the above, it was found that the withstand voltage characteristics, the leakage current characteristics, etc. are good, the ESR can be reduced, and a high capacity appearance rate can be obtained. Since this lead dioxide forms a highly conductive semiconductor layer, a solid electrolytic capacitor having low ESR characteristics can be formed. In addition, since the semiconductor layer using lead dioxide can be formed by oxidizing lead acetate with an oxidizing agent such as ammonium persulfate at room temperature, the anodized film is less damaged than manganese dioxide formed at high temperature. It is considered that withstand voltage characteristics, leakage current characteristics, etc. are good, and characteristics equivalent to those of a conductive polymer can be obtained.

ただし、二酸化鉛は、上記PEDTに比較すると、陽極箔の化成電圧に対して定格電圧が低いという欠点がある。したがって、PEDTと同じ定格電圧にするためには、陽極箔の化成電圧を高くしなければならず、その分、陽極箔の化成皮膜の厚みが大きくなり、陽極箔の静電容量が小さくなるため、陽極箔の静電容量と陰極箔の静電容量の合成容量であるコンデンサの静電容量は小さくなる。   However, lead dioxide has a drawback that the rated voltage is lower than the formation voltage of the anode foil, compared to the PEDT. Therefore, in order to obtain the same rated voltage as that of PEDT, the conversion voltage of the anode foil must be increased, and accordingly, the thickness of the conversion film of the anode foil increases and the capacitance of the anode foil decreases. The capacitance of the capacitor, which is the combined capacitance of the anode foil capacitance and the cathode foil capacitance, is reduced.

続いて、電解質層として二酸化鉛を用いた巻回型の固体電解コンデンサの製造方法について説明する。すなわち、陽極箔としては、エッチングしたアルミニウム箔の表面に、従来から用いられている方法で化成処理を施して誘電体皮膜を形成したものを用いる。この陽極箔を陰極箔及びセパレータと共に巻回してコンデンサ素子を形成し、このコンデンサ素子を、0.05モル/リットル〜飽和溶解度を与える濃度までの範囲の酢酸鉛水溶液に浸漬し、ここに、酢酸鉛1モルに対して0.1〜5モルまでの範囲の過硫酸アンモニウム水溶液を加え、室温で30分〜2時間放置して、誘電体層上に二酸化鉛層を形成する。次いで、コンデンサ素子を水洗、乾燥した後、樹脂封止して、固体電解コンデンサを形成する。   Then, the manufacturing method of the winding type solid electrolytic capacitor using lead dioxide as an electrolyte layer is demonstrated. That is, as the anode foil, one obtained by subjecting the surface of an etched aluminum foil to a chemical conversion treatment by a conventionally used method to form a dielectric film is used. This anode foil is wound together with a cathode foil and a separator to form a capacitor element, and this capacitor element is immersed in a lead acetate aqueous solution in a range from 0.05 mol / liter to a concentration that gives saturated solubility, and acetic acid is added thereto. An aqueous solution of ammonium persulfate in the range of 0.1 to 5 mol per 1 mol of lead is added and left at room temperature for 30 minutes to 2 hours to form a lead dioxide layer on the dielectric layer. Next, the capacitor element is washed with water and dried, and then sealed with a resin to form a solid electrolytic capacitor.

なお、通常の電解液を用いる電解コンデンサに本発明に係る陰極箔を用いても、電解液と陰極箔の界面に電気二重層コンデンサが形成されて容量成分となるので、陰極箔の容量がゼロになることはなく、本発明のような最大の容量を得ることはできない。   Even if the cathode foil according to the present invention is used for an electrolytic capacitor using a normal electrolytic solution, an electric double layer capacitor is formed at the interface between the electrolytic solution and the cathode foil and becomes a capacitive component, so that the capacitance of the cathode foil is zero. The maximum capacity as in the present invention cannot be obtained.

本発明によれば、陰極箔の表面に化成皮膜を形成し、さらにその上に金属窒化物からなる皮膜を形成することにより、この金属窒化物が陰極箔の表面に形成された化成皮膜の一部を除去して、金属窒化物と陰極箔金属とが導通する。その結果、陰極箔の容量が無限大となり、陰極箔表面の容量成分がなくなり、結果として、陽極箔と陰極箔の合成容量であるコンデンサの静電容量が、陽極箔のみの静電容量と等しくなって最大となる。また、陰極箔の容量成分がなくなることによって、その誘電損失分もなくなるので、tanδも低減する。従って、本発明によれば、ESRの低減を図り、容量出現率の向上を可能とした固体電解コンデンサ及びその製造方法を提供することができる。   According to the present invention, a chemical conversion film is formed on the surface of the cathode foil by forming a chemical conversion film on the surface of the cathode foil and further forming a film made of the metal nitride thereon. The metal nitride and the cathode foil metal are electrically connected. As a result, the capacity of the cathode foil becomes infinite, and the capacitance component on the surface of the cathode foil disappears. As a result, the capacitance of the capacitor, which is the combined capacity of the anode foil and the cathode foil, is equal to the capacitance of only the anode foil. Become the maximum. Further, since the capacity component of the cathode foil is eliminated, the dielectric loss is also eliminated, and tan δ is also reduced. Therefore, according to the present invention, it is possible to provide a solid electrolytic capacitor capable of reducing ESR and improving the capacity appearance rate, and a method for manufacturing the same.

(1)第1実施形態
以下、本発明の第1実施形態を表1に従って具体的に説明する。
(1) First Embodiment Hereinafter, a first embodiment of the present invention will be specifically described with reference to Table 1.

本実施形態は、電解質層として導電性ポリマーを用いた巻回型の固体電解コンデンサに関するものである。なお、本発明に係る表面に化成皮膜を形成し、さらにその上に金属窒化物からなる皮膜を形成した陰極箔は、以下の実施例1のように作成した。また、比較例1として、陰極表面に実施例1と同じ化成電圧で化成皮膜のみを形成した陰極箔を用い、従来例1として通常の陰極箔を用いた。   The present embodiment relates to a winding type solid electrolytic capacitor using a conductive polymer as an electrolyte layer. In addition, the cathode foil which formed the chemical conversion film on the surface based on this invention, and also formed the film | membrane which consists of metal nitride on it was created like the following Example 1. FIG. Further, as Comparative Example 1, a cathode foil in which only a chemical conversion film was formed on the cathode surface at the same conversion voltage as in Example 1 was used, and as Conventional Example 1, a normal cathode foil was used.

(実施例1)
高純度のアルミニウム箔(純度99%、厚さ50μm)を4mm×30mmに切断したものを被処理材として使用し、エッチング処理後、化成電圧2Vで0.15%のリン酸二水素アンモニウムの水溶液で化成し、さらにその表面にTiN膜を陰極アークプラズマ蒸着法により形成した。なお、陰極アークプラズマ蒸着法の条件は、窒素雰囲気中でTiターゲットを用い、高純度のアルミニウム箔を200℃に加熱し、5×10−3Torr、300A、20Vで行った。そして、この陰極箔を陽極箔及びセパレータと共に巻回して、素子形状が4φ×7Lのコンデンサ素子を形成し、このコンデンサ素子にEDTモノマーを含浸し、さらに酸化剤溶液として45%のパラトルエンスルホン酸第二鉄のブタノール溶液を含浸して、100℃、1時間加熱した。その後、コンデンサ素子の表面を樹脂で被覆し、エージングを行って、固体電解コンデンサを形成した。なお、この固体電解コンデンサの定格電圧は6.3WV、定格容量は33μFである。
Example 1
A high-purity aluminum foil (purity 99%, thickness 50 μm) cut to 4 mm × 30 mm is used as a material to be treated, and after etching, an aqueous solution of 0.15% ammonium dihydrogen phosphate at a formation voltage of 2 V Then, a TiN film was formed on the surface by a cathodic arc plasma deposition method. The conditions of the cathodic arc plasma deposition method were as follows: a Ti target was used in a nitrogen atmosphere, a high-purity aluminum foil was heated to 200 ° C., and 5 × 10 −3 Torr, 300 A, 20 V. Then, the cathode foil is wound together with the anode foil and the separator to form a capacitor element having an element shape of 4φ × 7 L. The capacitor element is impregnated with EDT monomer, and further 45% paratoluenesulfonic acid is used as an oxidant solution. Impregnated with ferric butanol solution and heated at 100 ° C. for 1 hour. Thereafter, the surface of the capacitor element was covered with a resin, and aging was performed to form a solid electrolytic capacitor. This solid electrolytic capacitor has a rated voltage of 6.3 WV and a rated capacity of 33 μF.

(比較例1)
被処理材には実施例1と同じものを用い、エッチング処理後、化成電圧2Vで0.15%のリン酸二水素アンモニウムの水溶液で化成して陰極箔を作成した。そして、この陰極箔を用い、実施例1と同様にして固体電解コンデンサを形成した。
(Comparative Example 1)
The same material as in Example 1 was used as the material to be treated. After the etching treatment, a cathode foil was prepared by chemical conversion with an aqueous solution of 0.15% ammonium dihydrogen phosphate at a conversion voltage of 2V. Then, using this cathode foil, a solid electrolytic capacitor was formed in the same manner as in Example 1.

(従来例1)
被処理材には実施例1と同じものを用い、表面に化成皮膜及び金属窒化物からなる皮膜を形成していないものを陰極箔として用いた。そして、この陰極箔を用い、実施例1と同様にして固体電解コンデンサを形成した。
(Conventional example 1)
The same material as in Example 1 was used as the material to be treated, and the cathode foil with no chemical conversion film and metal nitride film formed thereon was used. Then, using this cathode foil, a solid electrolytic capacitor was formed in the same manner as in Example 1.

[比較結果]
上記の方法により得られた実施例1、比較例1及び従来例1の固体電解コンデンサの電気的特性を表1に示す。
[Comparison result]
Table 1 shows the electrical characteristics of the solid electrolytic capacitors of Example 1, Comparative Example 1, and Conventional Example 1 obtained by the above method.

Figure 0004329800
Figure 0004329800

表1から明らかなように、陰極箔の表面に化成皮膜及び金属窒化物からなる皮膜のいずれも形成していない陰極箔を用いた従来例1においては、静電容量(Cap)は"30.2"と低く、等価直列抵抗(ESR)は"49"、tanδは"0.120"と高かった。これに対して、実施例1においては、Capは"46.8"と従来例1の約1.55倍に上昇し、tanδは"0.020"と従来例1の約16.7%に低下した。また、ESRは"35"と従来例1の約71.4%に低下した。   As is apparent from Table 1, in Conventional Example 1 in which neither the chemical conversion film nor the metal nitride film is formed on the surface of the cathode foil, the electrostatic capacity (Cap) is "30. The equivalent series resistance (ESR) was as high as “49” and tan δ was as high as “0.120”. On the other hand, in Example 1, Cap increases to “46.8”, which is approximately 1.55 times that of Conventional Example 1, and tan δ increases to “0.020”, which is approximately 16.7% of Conventional Example 1. Declined. Further, the ESR was “35”, which was about 71.4% of the conventional example 1.

一方、陰極箔の表面に化成皮膜のみを形成した比較例1においては、Capは"32.1"と従来例1の約1.06倍に上昇し、tanδは"0.088"と従来例1の約73.3%に低下した。また、ESRは"35"と従来例1の約71.4%に低下した。   On the other hand, in Comparative Example 1 in which only the chemical conversion film is formed on the surface of the cathode foil, Cap rises to “32.1”, which is about 1.06 times that of Conventional Example 1, and tan δ is “0.088”. 1 to about 73.3%. Further, the ESR was “35”, which was about 71.4% of the conventional example 1.

このような結果が得られたのは、以下の理由によると考えられる。すなわち、実施例1においては、陰極箔表面に形成された化成皮膜の上に、蒸着法によって金属窒化物からなる皮膜が形成されており、この金属窒化物が陰極箔の表面に形成された化成皮膜の一部を除去して、金属窒化物と陰極箔金属とが導通する。さらに、本実施形態においては、電解質として導電性ポリマーを用いているため、コンデンサの作成過程で高温処理をする必要がないので、金属窒化物の表面に酸化皮膜が形成されることはない。   The reason why such a result was obtained is considered to be as follows. That is, in Example 1, a film made of a metal nitride is formed by a vapor deposition method on the chemical conversion film formed on the surface of the cathode foil, and this metal nitride is formed on the surface of the cathode foil. A part of the film is removed, and the metal nitride and the cathode foil metal become conductive. Furthermore, in this embodiment, since a conductive polymer is used as the electrolyte, it is not necessary to perform a high temperature treatment in the process of producing the capacitor, so that an oxide film is not formed on the surface of the metal nitride.

このように実施例1によれば、陰極箔表面に蒸着した金属窒化物と陰極箔金属とが導通して陰極箔の容量が無限大となり、陰極箔表面の容量成分がなくなり、結果として、陽極箔と陰極箔の合成容量であるコンデンサの静電容量が、陽極箔のみの静電容量と等しくなって増大する。また、陰極箔の容量成分がなくなることによって、その誘電損失分もなくなるので、tanδも低減する。   Thus, according to Example 1, the metal nitride deposited on the surface of the cathode foil and the cathode foil metal are electrically connected, the capacity of the cathode foil becomes infinite, the capacity component on the surface of the cathode foil disappears, and as a result, the anode The capacitance of the capacitor, which is the combined capacitance of the foil and the cathode foil, increases to be equal to the capacitance of the anode foil alone. Further, since the capacity component of the cathode foil is eliminated, the dielectric loss is also eliminated, and tan δ is also reduced.

さらに、陰極箔の表面に形成される金属窒化物は蒸着法によって形成されているので、エッチングを施した陰極箔表面の凹部の側面などには金属窒化物が形成されることない。そのため、この部分では導電性ポリマーと陰極箔が直接接触することになるが、陰極箔の表面には予め化成皮膜が形成されているので、陰極箔と導電性ポリマーとの密着性が向上して、ESR及びtanδが低減したと考えられる。   Furthermore, since the metal nitride formed on the surface of the cathode foil is formed by the vapor deposition method, the metal nitride is not formed on the side surface of the recessed portion of the etched cathode foil surface. Therefore, although the conductive polymer and the cathode foil are in direct contact with each other in this portion, since the chemical conversion film is formed in advance on the surface of the cathode foil, the adhesion between the cathode foil and the conductive polymer is improved. , ESR and tan δ are considered to be reduced.

一方、陰極箔の表面に化成皮膜のみを形成した比較例1においては、実施例1に比べてCapの上昇率は大きくないが、tanδは従来例1の約73.3%に、また、ESRは従来例1の約71.4%に低下した。これは、陰極箔の表面に所定の化成電圧で化成皮膜を形成したことにより、陰極箔と導電性ポリマーとの密着性が向上して、ESR及びtanδが低減したと考えられる。   On the other hand, in Comparative Example 1 in which only the chemical conversion film was formed on the surface of the cathode foil, the rate of increase in Cap was not large compared to Example 1, but tan δ was about 73.3% of Conventional Example 1, and ESR. Decreased to about 71.4% of Conventional Example 1. This is presumably because the formation of a chemical conversion film on the surface of the cathode foil with a predetermined conversion voltage improved the adhesion between the cathode foil and the conductive polymer, and reduced ESR and tan δ.

前記のような構成を有する第1実施形態によれば、表面に化成皮膜を形成し、さらにその上に金属窒化物からなる皮膜を形成した陰極箔を用いた固体電解コンデンサにおいては、ESR及びtanδを低減し、さらに容量出現率を大幅に向上することができることが明らかとなった。   According to the first embodiment having the above-described configuration, in a solid electrolytic capacitor using a cathode foil in which a chemical conversion film is formed on the surface and a film made of a metal nitride is further formed thereon, ESR and tan δ It has become clear that the capacity appearance rate can be significantly improved.

(2)第2実施形態
本実施形態は、電解質層として二酸化鉛を用いた巻回型の固体電解コンデンサに関するものである。なお、本発明に係る表面に化成皮膜を形成し、さらにその上に金属窒化物からなる皮膜を形成した陰極箔は、以下の実施例2のように作成した。また、比較例2として、陰極表面に実施例2と同じ化成電圧で化成皮膜のみを形成した陰極箔を用い、従来例2として通常の陰極箔を用いた。
(2) Second Embodiment The present embodiment relates to a winding type solid electrolytic capacitor using lead dioxide as an electrolyte layer. In addition, the cathode foil which formed the chemical conversion film on the surface which concerns on this invention, and also formed the film | membrane which consists of metal nitride on it was created like the following Example 2. FIG. Further, as Comparative Example 2, a cathode foil in which only a chemical conversion film was formed on the cathode surface at the same conversion voltage as in Example 2 was used. As Conventional Example 2, a normal cathode foil was used.

(実施例2)
高純度のアルミニウム箔(純度99%、厚さ50μm)を4mm×30mmに切断したものを被処理材として使用し、エッチング処理後、化成電圧2Vで0.15%のリン酸二水素アンモニウムの水溶液で化成し、さらにその表面にTiN膜を陰極アークプラズマ蒸着法により形成した。なお、陰極アークプラズマ蒸着法の条件は、窒素雰囲気中でTiターゲットを用い、高純度のアルミニウム箔を200℃に加熱し、5×10−3Torr、300A、20Vで行った。そして、この陰極箔を陽極箔及びセパレータと共に巻回して、素子形状が4φ×7Lのコンデンサ素子を形成した。このコンデンサ素子を、3モル/リットルの酢酸鉛水溶液に浸漬し、ここに、同量の3モル/リットルの過硫酸アンモニウム水溶液を加え、室温で1時間放置した。次いで、このコンデンサ素子を水洗、乾燥した後、実施例1と同様にして、定格電圧6.3WV、定格容量22μFの固体電解コンデンサを形成した。
(Example 2)
A high-purity aluminum foil (purity 99%, thickness 50 μm) cut to 4 mm × 30 mm is used as a material to be treated, and after etching, an aqueous solution of 0.15% ammonium dihydrogen phosphate at a formation voltage of 2 V Then, a TiN film was formed on the surface by a cathodic arc plasma deposition method. The conditions of the cathodic arc plasma deposition method were as follows: a Ti target was used in a nitrogen atmosphere, a high-purity aluminum foil was heated to 200 ° C., and 5 × 10 −3 Torr, 300 A, 20 V. And this cathode foil was wound with the anode foil and the separator, and the capacitor | condenser element whose element shape is 4phi * 7L was formed. This capacitor element was immersed in a 3 mol / liter lead acetate aqueous solution, and the same amount of 3 mol / liter ammonium persulfate aqueous solution was added thereto and left at room temperature for 1 hour. Next, the capacitor element was washed with water and dried, and then a solid electrolytic capacitor having a rated voltage of 6.3 WV and a rated capacity of 22 μF was formed in the same manner as in Example 1.

なお、実施例2では、PEDTを用いた実施例1に比べて、定格容量が22μFと小さくなっているが、その理由は以下の通りである。すなわち、二酸化鉛はPEDTに比べて、陽極箔の化成電圧に対してコンデンサの定格電圧が低くなる。したがって、同じ定格電圧であると、二酸化鉛の場合は陽極箔の化成電圧を高くしなければならない。そのため、陽極箔の厚みが大きくなって、陽極箔の静電容量が小さくなり、陽極箔の静電容量と陰極箔の静電容量の合成容量であるコンデンサの静電容量は小さくなる。   In Example 2, compared with Example 1 using PEDT, the rated capacity is as small as 22 μF. The reason is as follows. That is, lead dioxide has a lower rated voltage of the capacitor with respect to the formation voltage of the anode foil than PEDT. Therefore, in the case of lead dioxide at the same rated voltage, the formation voltage of the anode foil must be increased. Therefore, the thickness of the anode foil is increased, the capacitance of the anode foil is decreased, and the capacitance of the capacitor, which is the combined capacitance of the capacitance of the anode foil and the capacitance of the cathode foil, is decreased.

(比較例2)
被処理材には実施例2と同じものを用い、エッチング処理後、化成電圧2Vで0.15%のリン酸二水素アンモニウムの水溶液で化成して陰極箔を作成した。そして、この陰極箔を用い、実施例2と同様にして固体電解コンデンサを形成した。
(Comparative Example 2)
The same material as in Example 2 was used as the material to be treated. After the etching treatment, a cathode foil was prepared by chemical conversion with an aqueous solution of 0.15% ammonium dihydrogen phosphate at a conversion voltage of 2V. Then, using this cathode foil, a solid electrolytic capacitor was formed in the same manner as in Example 2.

(従来例2)
被処理材には実施例2と同じものを用い、表面に化成皮膜及び金属窒化物からなる皮膜を形成していないものを陰極箔として用いた。そして、この陰極箔を用い、実施例2と同様にして固体電解コンデンサを形成した。
(Conventional example 2)
The same material as in Example 2 was used as the material to be treated, and a cathode foil that did not have a chemical conversion film and a metal nitride film formed thereon was used. Then, using this cathode foil, a solid electrolytic capacitor was formed in the same manner as in Example 2.

[比較結果]
上記の方法により得られた実施例2、比較例2及び従来例2の固体電解コンデンサの電気的特性を表2に示す。
[Comparison result]
Table 2 shows the electrical characteristics of the solid electrolytic capacitors of Example 2, Comparative Example 2 and Conventional Example 2 obtained by the above method.

Figure 0004329800
Figure 0004329800

表2から明らかなように、陰極箔の表面に化成皮膜及び金属窒化物からなる皮膜のいずれも形成していない陰極箔を用いた従来例2においては、静電容量(Cap)は"22.0"と低く、等価直列抵抗(ESR)は"157"、tanδは"0.129"と高かった。これに対して、実施例2においては、Capは"24.9"と従来例2より約13%上昇し、tanδは"0.033"と従来例2の約26%に低下した。また、ESRは"136"と従来例2の約87%に低下した。   As is apparent from Table 2, in the conventional example 2 in which neither the chemical conversion film nor the metal nitride film is formed on the surface of the cathode foil, the capacitance (Cap) is "22. As low as 0, the equivalent series resistance (ESR) was as high as “157” and tan δ was as high as “0.129”. On the other hand, in Example 2, Cap was “24.9”, which was about 13% higher than that of Conventional Example 2, and tan δ was “0.033”, which was about 26% of that of Conventional Example 2. Further, the ESR was “136”, which was about 87% of the conventional example 2.

一方、陰極箔の表面に化成皮膜のみを形成した比較例2においては、Capは"23.1"と従来例2より約5%上昇し、tanδは"0.092"と従来例2の約71%に低下した。また、ESRは"138"と従来例2の約88%に低下した。   On the other hand, in Comparative Example 2 in which only the chemical conversion film is formed on the surface of the cathode foil, Cap is “23.1”, which is about 5% higher than Conventional Example 2, and tan δ is “0.092”, which is about the same as that of Conventional Example 2. It decreased to 71%. Further, the ESR was “138”, which was about 88% of the conventional example 2.

このような結果が得られたのは、以下の理由によると考えられる。すなわち、実施例2においては、陰極箔表面に形成された化成皮膜の上に、蒸着法によって金属窒化物からなる皮膜が形成されており、この金属窒化物が陰極箔の表面に形成された化成皮膜の一部を除去して、金属窒化物と陰極箔金属とが導通する。さらに、本実施形態においては、電解質として二酸化鉛を用いているため、コンデンサの作成過程で高温処理をする必要がないので、金属窒化物の表面に酸化皮膜が形成されることはない。   The reason why such a result was obtained is considered to be as follows. That is, in Example 2, a film made of a metal nitride is formed by a vapor deposition method on the chemical conversion film formed on the surface of the cathode foil, and this metal nitride is formed on the surface of the cathode foil. A part of the film is removed, and the metal nitride and the cathode foil metal become conductive. Furthermore, in this embodiment, since lead dioxide is used as the electrolyte, it is not necessary to perform high-temperature treatment in the process of producing the capacitor, so that an oxide film is not formed on the surface of the metal nitride.

このように実施例2によれば、陰極箔表面に蒸着した金属窒化物と陰極箔金属とが導通して陰極箔の容量が無限大となり、陰極箔表面の容量成分がなくなり、結果として、陽極箔と陰極箔の合成容量であるコンデンサの静電容量が、陽極箔のみの静電容量と等しくなって増大する。また、陰極箔の容量成分がなくなることによって、その誘電損失分もなくなるので、tanδも低減する。   As described above, according to Example 2, the metal nitride deposited on the surface of the cathode foil and the cathode foil metal are electrically connected, the capacity of the cathode foil becomes infinite, and the capacity component on the surface of the cathode foil is eliminated. The capacitance of the capacitor, which is the combined capacitance of the foil and the cathode foil, increases to be equal to the capacitance of the anode foil alone. Further, since the capacity component of the cathode foil is eliminated, the dielectric loss is also eliminated, and tan δ is also reduced.

さらに、陰極箔の表面に形成される金属窒化物は蒸着法によって形成されているので、エッチングを施した陰極箔表面の凹部の側面などには金属窒化物が形成されることない。そのため、この部分では二酸化鉛と陰極箔が直接接触することになるが、陰極箔の表面には予め化成皮膜が形成されているので、陰極箔と二酸化鉛との密着性が向上して、ESR及びtanδが低減したと考えられる。   Furthermore, since the metal nitride formed on the surface of the cathode foil is formed by the vapor deposition method, the metal nitride is not formed on the side surface of the recessed portion of the etched cathode foil surface. Therefore, lead dioxide and the cathode foil are in direct contact with each other in this portion, but since the chemical conversion film is previously formed on the surface of the cathode foil, the adhesion between the cathode foil and the lead dioxide is improved, and ESR. And tan δ are considered to be reduced.

なお、実施例2において、静電容量の上昇率(約13%)が、PEDTを用いた実施例1における上昇率(約55%)に比べて小さいものとなっているのは、以下の理由によると考えられる。すなわち、上述したように、実施例2においては、実施例1と同じ定格電圧にすると、陽極箔の化成電圧を高くしなければならないため、陽極箔の厚みが大きくなって陽極箔の静電容量が小さくなる。そのため、TiNを蒸着することによって陰極箔の静電容量が無限大になっても、陽極箔の静電容量と陰極箔の静電容量の合成容量であるコンデンサの静電容量に対する寄与が、PEDTを用いた実施例1より小さくなるためであると考えられる。   In Example 2, the increase rate of capacitance (about 13%) is smaller than the increase rate (about 55%) in Example 1 using PEDT for the following reason. It is thought that. That is, as described above, in Example 2, when the same rated voltage as that in Example 1 is used, the formation voltage of the anode foil must be increased, so that the thickness of the anode foil increases and the capacitance of the anode foil increases. Becomes smaller. Therefore, even if the capacitance of the cathode foil becomes infinite by depositing TiN, the contribution to the capacitance of the capacitor, which is the combined capacitance of the capacitance of the anode foil and the capacitance of the cathode foil, is PEDT. This is considered to be because it becomes smaller than Example 1 using.

一方、陰極箔の表面に化成皮膜のみを形成した比較例2においては、実施例2に比べてCapの上昇率は大きくないが、tanδは従来例2の約71.3%に、また、ESRは従来例2の約87.9%に低下した。これは、陰極箔の表面に所定の化成電圧で化成皮膜を形成したことにより、陰極箔と二酸化鉛との密着性が向上して、ESR及びtanδが低減したと考えられる。   On the other hand, in Comparative Example 2 in which only the chemical conversion film was formed on the surface of the cathode foil, the rate of increase in Cap was not large compared to Example 2, but tan δ was about 71.3% of Conventional Example 2 and ESR. Decreased to about 87.9% of Conventional Example 2. This is presumably because the formation of a chemical conversion film on the surface of the cathode foil with a predetermined conversion voltage improved the adhesion between the cathode foil and lead dioxide and reduced ESR and tan δ.

このような構成の第2実施形態によれば、表面に化成皮膜を形成し、さらにその上に金属窒化物からなる皮膜を形成した陰極箔を用いた固体電解コンデンサにおいては、電解質として二酸化鉛を用いた場合にも、導電性ポリマーからなる電解質層を備えた固体電解コンデンサと同様に、ESR及びtanδを低減し、さらに容量出現率を大幅に向上することができることが明らかとなった。   According to the second embodiment having such a configuration, in a solid electrolytic capacitor using a cathode foil in which a chemical conversion film is formed on the surface and a film made of a metal nitride is further formed thereon, lead dioxide is used as an electrolyte. Even when used, it has become clear that ESR and tan δ can be reduced and the capacity appearance rate can be greatly improved, as in the case of a solid electrolytic capacitor having an electrolyte layer made of a conductive polymer.

Claims (8)

弁金属からなる陰極箔と表面に酸化皮膜を形成した弁金属からなる陽極箔とを、セパレータを介して巻回してコンデンサ素子を形成し、前記陰極箔と陽極箔の間に導電性ポリマーからなる電解質層を形成した固体電解コンデンサにおいて、
前記陰極箔の表面に化成皮膜を形成し、さらにその上に化成皮膜の一部を除去するよう蒸着法によって金属窒化物からなる蒸着層を形成するとともに、蒸着層と陰極箔を導通させたことを特徴とする固体電解コンデンサ。
A cathode foil made of a valve metal and an anode foil made of a valve metal having an oxide film formed on the surface thereof are wound through a separator to form a capacitor element, and is made of a conductive polymer between the cathode foil and the anode foil. In a solid electrolytic capacitor in which an electrolyte layer is formed,
A chemical conversion film was formed on the surface of the cathode foil, and a vapor deposition layer made of a metal nitride was formed thereon by vapor deposition so as to remove a part of the chemical conversion film thereon, and the vapor deposition layer and the cathode foil were made conductive. Solid electrolytic capacitor characterized by
弁金属からなる陰極箔と表面に酸化皮膜を形成した弁金属からなる陽極箔とを、セパレータを介して巻回してコンデンサ素子を形成し、前記陰極箔と陽極箔の間に二酸化鉛からなる電解質層を形成した固体電解コンデンサにおいて、
前記陰極箔の表面に化成皮膜を形成し、さらにその上に化成皮膜の一部を除去するよう蒸着法によって金属窒化物からなる蒸着層を形成するとともに、蒸着層と陰極箔を導通させたことを特徴とする固体電解コンデンサ。
A cathode foil made of a valve metal and an anode foil made of a valve metal having an oxide film formed on the surface thereof are wound through a separator to form a capacitor element, and an electrolyte made of lead dioxide between the cathode foil and the anode foil In a solid electrolytic capacitor with a layer formed,
A chemical conversion film was formed on the surface of the cathode foil, and a vapor deposition layer made of a metal nitride was formed thereon by vapor deposition so as to remove a part of the chemical conversion film thereon, and the vapor deposition layer and the cathode foil were made conductive. Solid electrolytic capacitor characterized by
前記導電性ポリマーが、ポリエチレンジオキシチオフェンであることを特徴とする請求項1に記載の固体電解コンデンサ。   The solid electrolytic capacitor according to claim 1, wherein the conductive polymer is polyethylene dioxythiophene. 前記弁金属がアルミニウムであることを特徴とする請求項1乃至請求項3のいずれか一に記載の固体電解コンデンサ。 The solid electrolytic capacitor according to any one of claims 1 to 3 , wherein the valve metal is aluminum. 前記金属窒化物が、TiN、ZrN、TaN、NbNのいずれかであることを特徴とする請求項1または請求項2に記載の固体電解コンデンサ。 3. The solid electrolytic capacitor according to claim 1 , wherein the metal nitride is any one of TiN, ZrN, TaN, and NbN. 前記蒸着法が、陰極アークプラズマ蒸着法であることを特徴とする請求項1または請求項2に記載の固体電解コンデンサ。 The solid electrolytic capacitor according to claim 1 , wherein the vapor deposition method is a cathodic arc plasma vapor deposition method. 弁金属からなる陰極箔と表面に酸化皮膜を形成した弁金属からなる陽極箔とを、セパレータを介して巻回してコンデンサ素子を形成し、前記陰極箔と陽極箔の間に導電性ポリマーからなる電解質層を形成する固体電解コンデンサの製造方法において、
前記陰極箔の表面に化成皮膜を形成し、さらにその上に化成皮膜の一部を除去するよう蒸着法によって金属窒化物からなる蒸着層を形成するとともに、蒸着層と陰極箔を導通させることを特徴とする固体電解コンデンサの製造方法。
A cathode foil made of a valve metal and an anode foil made of a valve metal having an oxide film formed on the surface thereof are wound through a separator to form a capacitor element, and is made of a conductive polymer between the cathode foil and the anode foil. In the manufacturing method of the solid electrolytic capacitor for forming the electrolyte layer,
Forming a chemical conversion film on the surface of the cathode foil, and further forming a vapor deposition layer made of a metal nitride by vapor deposition so as to remove a part of the chemical conversion film on the surface, and electrically connecting the vapor deposition layer and the cathode foil; A method for producing a solid electrolytic capacitor.
弁金属からなる陰極箔と表面に酸化皮膜を形成した弁金属からなる陽極箔とを、セパレータを介して巻回してコンデンサ素子を形成し、前記陰極箔と陽極箔の間に二酸化鉛からなる電解質層を形成する固体電解コンデンサの製造方法において、
前記陰極箔の表面に化成皮膜を形成し、さらにその上に化成皮膜の一部を除去するよう蒸着法によって金属窒化物からなる蒸着層を形成するとともに、蒸着層と陰極箔を導通させることを特徴とする固体電解コンデンサの製造方法。
A cathode foil made of a valve metal and an anode foil made of a valve metal having an oxide film formed on the surface thereof are wound through a separator to form a capacitor element, and an electrolyte made of lead dioxide between the cathode foil and the anode foil In the method of manufacturing a solid electrolytic capacitor for forming a layer,
Forming a chemical conversion film on the surface of the cathode foil, and further forming a vapor deposition layer made of a metal nitride by vapor deposition so as to remove a part of the chemical conversion film on the surface, and electrically connecting the vapor deposition layer and the cathode foil; A method for producing a solid electrolytic capacitor.
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