JP4324124B2 - Cooling device, image display panel manufacturing apparatus and manufacturing method using the same - Google Patents

Cooling device, image display panel manufacturing apparatus and manufacturing method using the same Download PDF

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JP4324124B2
JP4324124B2 JP2005078394A JP2005078394A JP4324124B2 JP 4324124 B2 JP4324124 B2 JP 4324124B2 JP 2005078394 A JP2005078394 A JP 2005078394A JP 2005078394 A JP2005078394 A JP 2005078394A JP 4324124 B2 JP4324124 B2 JP 4324124B2
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昌真 吉村
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Description

本発明は、例えば、画像表示パネルや半導体装置などの電子・電気機器の製造工程において、当該電子・電気機器に用いられる基板を加熱処理した後の冷却に用いられる冷却装置、これを用いた画像表示パネルの製造装置および画像表示パネルの製造方法に関する。さらに詳しくは、上記電子・電気機器用の加熱された基板に冷却板を対面させ、この冷却板で放射熱を吸収して基板を冷却する冷却装置、これを用いた画像表示パネルの製造装置および画像表示パネルの製造方法に関する。   The present invention relates to, for example, a cooling device used for cooling after heat-treating a substrate used in the electronic / electrical device, such as an image display panel or a semiconductor device, and an image using the same The present invention relates to a display panel manufacturing apparatus and an image display panel manufacturing method. More specifically, a cooling device is provided that causes a cooling plate to face the heated substrate for the electronic / electric equipment, and absorbs radiant heat by the cooling plate to cool the substrate, an image display panel manufacturing apparatus using the cooling device, and The present invention relates to a method for manufacturing an image display panel.

従来、画像表示パネルや半導体の製造工程などにおいては、真空下で基板を加熱処理して冷却することが行われている。この加熱された基板の真空雰囲気下での冷却は、基板からの放射熱(輻射熱)を吸収することで行われている。例えば、特許文献1には、半導体製造における基板の冷却に際し、基板と平行に金属板を設け、この金属板の基板と対峙する面に輻射吸熱層を形成することにより、基板から発せられた輻射熱を輻射吸収層で吸収し、吸収した熱を金属板に熱伝達し、さらにこの熱を金属板を介して排熱できるようにすることが開示されている。   Conventionally, in a manufacturing process of an image display panel or a semiconductor, a substrate is heated and cooled under vacuum. Cooling of the heated substrate in a vacuum atmosphere is performed by absorbing radiant heat (radiant heat) from the substrate. For example, Patent Document 1 discloses that when a substrate is cooled in semiconductor manufacturing, a metal plate is provided in parallel with the substrate, and a radiant heat absorption layer is formed on a surface of the metal plate facing the substrate, thereby generating radiant heat generated from the substrate. Is absorbed by the radiation absorbing layer, and the absorbed heat is transferred to the metal plate, and this heat can be exhausted through the metal plate.

特開平7−216550号公報JP 7-216550 A

しかしながら、上記従来の冷却には、次のような問題がある。   However, the conventional cooling has the following problems.

第1に、冷却に供された基板の温度は、表裏面と側端面とから熱が放射される周端縁、特にコーナー部から下がり始まるが、基板の大きさが大きくなるに従って、基板の中心部と端縁との距離が大きくなり、迅速な熱伝導がされにくくなることから、冷却が進行しやすい周縁部と、冷却されにくい中心部とで大きな温度差が付きやすい。この冷却に伴う温度分布は、基板の歪みや破損の原因となる。   First, the temperature of the substrate subjected to cooling starts to fall from the peripheral edge, particularly the corner, where heat is radiated from the front and back surfaces and the side edge surfaces, but as the substrate size increases, Since the distance between the portion and the edge becomes large and rapid heat conduction is difficult, a large temperature difference is likely to occur between the peripheral portion where cooling is likely to proceed and the central portion where cooling is difficult. The temperature distribution accompanying this cooling causes distortion and breakage of the substrate.

第2に、加熱した後に冷却することが必要となる基板の中には、例えば、電子源基板と蛍光体基板とを対向配置した画像表示パネルにおける画像表示パネル用の基板(電子源基板や蛍光体基板)のように、基板の表面の一部に、基板自身とは放射率の異なる部材(例えば、配線や蛍光体など)を設けたものも少なくない。さらに画像表示パネル用の基板を例にして説明すると、通常、基板は比較的放射率の高いガラス、配線は比較的放射率の低い金属であることから、冷却板による冷却は配線の形成領域から外れる基板のコーナー部付近から進行し、やはり基板の歪みや破損の原因となる温度分布を生じやすい問題がある。特に配線が基板の中央寄りに集中すると、上記第1の理由による温度分布がさらに増長され、基板の割れを生じる原因ともなる。   Secondly, among the substrates that need to be cooled after being heated, for example, a substrate for an image display panel (an electron source substrate or a fluorescent substrate) in an image display panel in which an electron source substrate and a phosphor substrate are arranged to face each other. In many cases, a member having a different emissivity from the substrate itself (for example, a wiring or a phosphor) is provided on a part of the surface of the substrate, such as a body substrate. Further, the substrate for the image display panel will be described as an example. Usually, the substrate is made of glass having a relatively high emissivity, and the wiring is made of a metal having a relatively low emissivity. There is a problem in that the temperature distribution tends to occur from the corner portion of the substrate to be detached and cause distortion or breakage of the substrate. In particular, when the wiring concentrates near the center of the substrate, the temperature distribution due to the first reason is further increased, which may cause the substrate to crack.

本発明の第1の目的は、加熱された基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却するに際し、板材の中心部と周縁部間に生じる温度分布を容易に抑制できるようにすることにある。また、本発明の第2の目的は、基板が、その少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材を有している場合において、基板と異放射率部材間の放射率の違いによって基板生じる温度分布を容易に抑制できるようにすることにある。さらに本発明の第3の目的は、画像表示パネル用の基板の加熱と冷却を伴う画像表示パネルの製造に際し、冷却時に基板に生じる温度分布を容易に抑制できるようにすることにある。   The first object of the present invention is to make the temperature distribution generated between the central portion and the peripheral portion of the plate material easier when the heated substrate is made to face the cooling plate and the radiant heat from the substrate is absorbed and cooled. It is to be able to suppress. In addition, the second object of the present invention is that when the substrate has a different emissivity member having an emissivity different from that of the substrate on at least a part of one surface thereof, the substrate and the different emissivity member are provided. The object is to easily suppress the temperature distribution generated by the substrate due to the difference in emissivity. A third object of the present invention is to make it possible to easily suppress the temperature distribution generated on the substrate during cooling when the image display panel is heated and cooled with the substrate for the image display panel.

本発明は、内部が真空雰囲気に保たれる真空チャンバー内で、基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する冷却装置において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されていることを特徴とする冷却装置である。
The present invention provides a cooling device that cools a substrate with a cooling plate facing the substrate and absorbing radiant heat from the substrate in a vacuum chamber in which the inside is maintained in a vacuum atmosphere .
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one surface of the substrate, and the substrate having the different emissivity member is radiated on a surface of the cooling plate facing the substrate. When the cooling plate is cooled with a uniform rate, the temperature distribution generated in the substrate due to the difference in emissivity between the substrate and the different emissivity member can be reduced. The coating layer has an emissivity different from that of the cooling plate. It is the cooling device characterized by being formed .

また、本発明は、内部が真空雰囲気に保たれる真空チャンバー内に、基板を加熱する加熱装置と、該加熱装置で加熱された前記基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する冷却装置とを備えた画像表示パネルの製造装置において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されていることを特徴とする画像表示パネルの製造装置である。
The present invention also provides a heating device for heating a substrate in a vacuum chamber in which the inside is maintained in a vacuum atmosphere, and a cooling plate facing the substrate heated by the heating device to radiate heat from the substrate. In an image display panel manufacturing apparatus including a cooling device that absorbs and cools
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one surface of the substrate, and the substrate having the different emissivity member is radiated on a surface of the cooling plate facing the substrate. If the rate was cooled with uniform cooling plate, in a pattern that can reduce the temperature distribution generated in the substrate due to the difference in emissivity of the substrate and the different emissivity member, a coating layer emissivity is different from the cooling plate The image display panel manufacturing apparatus is characterized by being formed .

また、本発明は、真空雰囲気内で、基板を加熱した後、該加熱した基板を、当該基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する工程を有する画像表示パネルの製造方法において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板として、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されているものを用いることを特徴とする画像表示パネルの製造方法である。
Further, the present invention is in a vacuum atmosphere, after heating the substrate, having a board which heated the pressurized, so as to face the cooling plate on the substrate, a step of cooling by absorbing radiant heat from the substrate In the manufacturing method of the image display panel,
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one side of the substrate, and the different emissivity member is provided on the surface of the cooling plate facing the substrate as the cooling plate. when cooled with uniform cooling plate emissivity of the substrate having, in a pattern that can reduce the temperature distribution generated in the substrate due to the difference in emissivity of the substrate and the different emissivity member, emissivity and the cooling plate A method for manufacturing an image display panel, wherein a coating layer having a different coating layer is used.

なお、本明細書において放射率とは、黒体からの放射量に対する同じ温度の試料からの放射量の比のことをいう。黒体炉と分光放射測定器の組み合わせで測定することができる。   In the present specification, the emissivity refers to the ratio of the amount of radiation from a sample at the same temperature to the amount of radiation from a black body. It can be measured with a combination of a blackbody furnace and a spectroradiometer.

本発明によれば、冷却板に設けられた異放射率領域により、基板面の冷却速度をコントロールすることができ、全面をほぼ均一な速度で冷却することができるので、基板の歪みや損傷の原因となる温度分布の発生を抑制することができる。   According to the present invention, the cooling rate of the substrate surface can be controlled by the different emissivity region provided on the cooling plate, and the entire surface can be cooled at a substantially uniform rate. Occurrence of the temperature distribution that causes the problem can be suppressed.

また、本発明によれば、やはり冷却板に設けられた異放射率領域により、基板面の冷却速度をコントロールすることができるので、例えば配線などの基板とは放射率が異なる異放射率部材が設けられている場合でも、それに起因して生じる基板の温度分布を軽減することができ、歩留まりのよい画像表示パネルの製造が可能となるものである。   Further, according to the present invention, the cooling rate of the substrate surface can also be controlled by the different emissivity region provided on the cooling plate, so that the different emissivity member having an emissivity different from that of the substrate such as wiring is provided. Even if it is provided, the temperature distribution of the substrate caused by it can be reduced, and an image display panel with a high yield can be manufactured.

以下、画像表示パネル用の基板を処理対象とする場合を例にして、図面に基づいて本発明を更に詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to the drawings, taking as an example a case where a substrate for an image display panel is a processing target.

図1は、画像表示パネルの製造装置の一部として用いられる、本発明に係る冷却装置を有する加熱・冷却装置の第1の例で、基板を加熱している状態の模式的説明図、図2は、図1の加熱・冷却装置で基板を冷却している状態を示す模式的説明図、図3は、処理対象の一例である、片面に配線を有する基板の平面図、図4は、図3に示される基板が有する配線の形成領域に概略対応して設けられた異放射率領域のパターンを示す図である。   FIG. 1 is a schematic illustration of a heating / cooling device having a cooling device according to the present invention, which is used as a part of an image display panel manufacturing device, in a state where a substrate is heated. 2 is a schematic explanatory view showing a state where the substrate is cooled by the heating / cooling apparatus of FIG. 1, FIG. 3 is a plan view of a substrate having wiring on one side, which is an example of a processing target, and FIG. It is a figure which shows the pattern of the different emissivity area | region provided substantially corresponding to the formation area of the wiring which the board | substrate shown in FIG. 3 has.

図1及び図2に示されるように、本第1の例に係る加熱・冷却装置は、内部が真空雰囲気に保たれる真空チャンバー1内に、加熱装置2と冷却装置3を別々に設けたもので、加熱装置2と冷却装置3間にはガイド4が設けられており、このガイド4に沿って真空チャンバー1内を移動する駆動ユニット5が設けられている。また、処理対象である画像表示パネル用の基板6は、駆動ユニット5から延出した支持アーム7に水平に支持されており、駆動ユニット5の移動によって、加熱装置2と冷却装置3間を搬送されるものとなっている。   As shown in FIGS. 1 and 2, the heating / cooling device according to the first example is provided with a heating device 2 and a cooling device 3 separately in a vacuum chamber 1 in which the inside is maintained in a vacuum atmosphere. Therefore, a guide 4 is provided between the heating device 2 and the cooling device 3, and a drive unit 5 that moves in the vacuum chamber 1 along the guide 4 is provided. The image display panel substrate 6 to be processed is horizontally supported by a support arm 7 extending from the drive unit 5, and is transported between the heating device 2 and the cooling device 3 by the movement of the drive unit 5. It is supposed to be.

加熱装置2は、上下一対の板状のヒーター8a,8bと、両ヒーター8a,8bを囲む、リフレクター9と、基板6の搬入と搬出時に開閉されるシャッター10とを備えたものとなっている。リフレクター9およびシャッター10は、表裏共に、銅に代表されるような低放射率の材料で構成されており、基板6の加熱効率を向上させると同時に、加熱エリア外への放熱をおさえることで、冷却装置3での冷却中の基板6への熱の移動を低減させることができるようになっている。   The heating device 2 includes a pair of upper and lower plate-like heaters 8a and 8b, a reflector 9 surrounding the heaters 8a and 8b, and a shutter 10 that is opened and closed when the substrate 6 is carried in and out. . The reflector 9 and the shutter 10 are both made of a low emissivity material such as copper, and improve the heating efficiency of the substrate 6 while suppressing heat dissipation outside the heating area. Heat transfer to the substrate 6 during cooling by the cooling device 3 can be reduced.

上記加熱装置2による基板6の加熱は、シャッター10を開いて、支持アーム7に基板6を支持した駆動ユニット5をリフレクター9内に導き入れて速やかにシャッター10を閉じ、図1に示されるように、基板6を両ヒーター8a,8b間に位置させ、基板6の上下面にそれぞれ対面する両ヒーター8a,8bからの輻射熱によって行われる。   Heating of the substrate 6 by the heating device 2 opens the shutter 10, introduces the drive unit 5 supporting the substrate 6 into the support arm 7 into the reflector 9, and quickly closes the shutter 10, as shown in FIG. 1. The substrate 6 is positioned between the heaters 8a and 8b, and is performed by radiant heat from the heaters 8a and 8b facing the upper and lower surfaces of the substrate 6, respectively.

画像表示パネル用の基板6は、例えば、複数の電子放出素子およびこの電子放出素子を駆動するためのマトリクス配線などを設けた電子源基板と、この電子源基板からの電子線の照射によって画像を形成する蛍光体を設けた蛍光体基板とを対向配置した画像表示パネルにおいては、上記電子源基板や蛍光体基板として用いられるもので、その加熱は、配線や電子放出素子構成部材の形成、蛍光体の形成、付着成分除去などのために、画像表示パネルの製造完了までに複数回行われるのが通常である。また、上記のようにして加熱処理を受けた基板6は、次工程での処理のために、一旦冷却されるのが通常である。   The image display panel substrate 6 includes, for example, an electron source substrate provided with a plurality of electron-emitting devices and a matrix wiring for driving the electron-emitting devices, and an image by irradiation of electron beams from the electron source substrate. An image display panel in which a phosphor substrate provided with a phosphor to be formed is opposed to each other is used as the electron source substrate or the phosphor substrate. The heating is performed for the formation of wiring and electron-emitting device components, fluorescence In order to form a body, remove adhering components, etc., it is usually carried out a plurality of times until the manufacture of the image display panel is completed. Further, the substrate 6 that has been subjected to the heat treatment as described above is usually once cooled for processing in the next step.

本例の加熱・冷却装置における基板6の冷却は、上記のようにして加熱装置2での加熱を行った後、シャッター10を開いて駆動ユニット5をリフレクター9外へと出し、速やかにシャッター10を閉じると共に、支持アーム7に基板6を支持した駆動ユニット5を冷却装置3へと移動させて行われる。   The substrate 6 in the heating / cooling device of this example is cooled by heating the heating device 2 as described above, and then opening the shutter 10 to bring the drive unit 5 out of the reflector 9 and promptly release the shutter 10. And the drive unit 5 supporting the substrate 6 on the support arm 7 is moved to the cooling device 3.

冷却装置3は、前記加熱装置2と同じ真空チャンバー1内に収容されており、搬送されて来る基板6の上下面とそれぞれ対面し、それぞれ基板6より広い対向面を有する冷却板11a,11bを備えたものとなっている。冷却板11a,11bは、アルミや銅などに代表される熱伝導率の良い材料で構成されており、その内部には、冷却水などの冷却媒体を循環させるための冷却経路12a,12bを備えている。   The cooling device 3 is housed in the same vacuum chamber 1 as the heating device 2, and faces the upper and lower surfaces of the substrate 6 being conveyed, and has cooling plates 11 a and 11 b each having a facing surface wider than the substrate 6. It has become a preparation. The cooling plates 11a and 11b are made of a material having good thermal conductivity such as aluminum and copper, and have cooling paths 12a and 12b for circulating a cooling medium such as cooling water inside. ing.

ところで、本例における処理対象である画像表示パネル用の基板6は、画像表示パネルの電子源基板で、図3に示されるように、その片面に、縦横に多数の配線13が密に形成されたものとなっている。基板6は、放射率の高いガラスなどの絶縁性物質で構成され、配線13は、基板6に比して放射率の低い銀などの金属で構成されている。即ち、配線13は、基板6自信とは放射率が異なる異放射率部材となっている。また、基板6の他面は、放射率の高いガラスなどの絶縁性物質が露出した、ほぼ均一な放射率の面となっている。   By the way, the substrate 6 for the image display panel, which is the processing target in this example, is an electron source substrate of the image display panel, and as shown in FIG. It has become. The substrate 6 is made of an insulating material such as glass having a high emissivity, and the wiring 13 is made of a metal such as silver whose emissivity is lower than that of the substrate 6. That is, the wiring 13 is a different emissivity member having an emissivity different from that of the substrate 6 itself. Further, the other surface of the substrate 6 is a surface with a substantially uniform emissivity from which an insulating material such as glass having a high emissivity is exposed.

加熱装置2で加熱された上記基板6は、前記のように駆動ユニット5の移動によって冷却装置3の冷却板11a,11b間へと搬送され、上下面に対面する冷却板11a,11bによる放射熱の吸収によって冷却される。基板6からの放射熱を吸収した冷却板11a,11bは、それぞれに設けられた冷却経路12a,12b内を流れる冷媒によって冷却されることになる。   The substrate 6 heated by the heating device 2 is transported between the cooling plates 11a and 11b of the cooling device 3 by the movement of the drive unit 5 as described above, and radiant heat by the cooling plates 11a and 11b facing the upper and lower surfaces. It is cooled by absorption. The cooling plates 11a and 11b that have absorbed the radiant heat from the substrate 6 are cooled by the refrigerant flowing in the cooling paths 12a and 12b provided respectively.

図3に示される、異放射率部材である配線13を有する基板6を、対向面が均一な放射率の冷却板11a,11bで冷却した場合、他の領域より放射率の低い異放射率部材である配線13が密に形成された領域の冷却が遅れる一方、放射率の高いガラスの基板6面が広く露出している基板6の四隅部は迅速に冷却されることになり、基板6に大きな温度分布を生じやすくなる。   When the board | substrate 6 which has the wiring 13 which is a different emissivity member shown by FIG. 3 is cooled with the cooling plates 11a and 11b of a uniform emissivity, the different emissivity member whose emissivity is lower than another area | region While the cooling of the region where the wirings 13 are densely formed is delayed, the four corners of the substrate 6 where the surface of the glass substrate 6 having a high emissivity is widely exposed are quickly cooled. A large temperature distribution is likely to occur.

そこで、本例の冷却装置3における冷却板11a,11bの基板6との対向面には、図4に示されるように、当該面が均一な放射率である場合に基板6に生じる温度分布を軽減できるよう、配線13の形成領域に対応して、他の領域とは放射率の異なる異放射率領域14が設けられている。具体的には、本例における異放射率部材である配線13は基板6比して放射率が低く、配線13の形成領域の冷却が遅れることから、この配線13の形成領域の熱を吸収しやすくして冷却速度を上げるべく、本例における異放射率領域14は、例えばセラミックコーティングなどを施すことで、基板6との対向面における他の領域より放射率の高い領域として形成されている。また、この異放射率領域14は、図4に示されるように、略十字形に形成されており、冷却板11a,11bの四隅は、冷却板11a,11bのベース材料であるアルミや銅など、熱伝導率は高いが、放射率は異放射率領域14に比して低い材料の表面が露出しているので、これに対向する基板6の配線13形成面における四隅(基板6の露出領域)からの熱の吸収が抑制され、上記配線13の形成領域の冷却速度の向上と相俟って、冷却に伴う基板6への温度分布の発生が抑制される。   Therefore, the surface of the cooling plate 11a, 11b facing the substrate 6 in the cooling device 3 of this example has a temperature distribution generated on the substrate 6 when the surface has a uniform emissivity, as shown in FIG. A different emissivity region 14 having a different emissivity from other regions is provided in correspondence with the formation region of the wiring 13 so as to be reduced. Specifically, the wiring 13 which is a member having a different emissivity in this example has a lower emissivity than the substrate 6 and the cooling of the formation region of the wiring 13 is delayed, so that the heat of the formation region of the wiring 13 is absorbed. In order to facilitate the cooling rate and increase the cooling rate, the different emissivity region 14 in this example is formed as a region having a higher emissivity than other regions on the surface facing the substrate 6 by applying, for example, ceramic coating. Further, as shown in FIG. 4, the different emissivity region 14 is formed in a substantially cross shape, and the four corners of the cooling plates 11a and 11b are aluminum, copper, or the like, which is the base material of the cooling plates 11a and 11b. Since the surface of the material having a high thermal conductivity but a low emissivity compared to the different emissivity region 14 is exposed, the four corners (exposed regions of the substrate 6) on the wiring 13 formation surface of the substrate 6 facing this are exposed. ) Is suppressed, and in combination with the improvement in the cooling rate of the region where the wiring 13 is formed, the occurrence of temperature distribution on the substrate 6 due to cooling is suppressed.

なお、本例のように、冷却対象である基板6がガラスである場合においては、ガラスが主に5μ〜20μという限定された波長しか放射(吸収)を行わない特性があるため、当然のことながらこれと同程度の波長域である5μ〜20μの分光放射率ελのことを放射率とする。また、放射率は、プロセス温度である常温〜400℃の範囲における任意の温度で測定することができる。   In addition, when the board | substrate 6 which is a cooling object is glass like this example, since glass has the characteristic which mainly radiates | emits only the limited wavelength of 5 micrometers-20 micrometers, it is natural. However, the emissivity is the spectral emissivity ελ of 5 μ to 20 μ, which is the same wavelength range as this. The emissivity can be measured at any temperature in the range of room temperature to 400 ° C., which is the process temperature.

上記異放射率領域14は、異熱放射部材である配線13の形成領域に一致させて形成してもよいが、基板6の中央部より周縁部の方が冷却されやすいことから、配線13の形成領域より小さく形成してバランスをとることが好ましい。   The different emissivity region 14 may be formed so as to coincide with the formation region of the wiring 13 which is a different heat radiation member. However, since the peripheral portion is more easily cooled than the central portion of the substrate 6, It is preferable to form a balance smaller than the formation region.

上記の例は、異放射率部材(上記の例では配線13)が基板6より放射率が低い場合であるが、基板6より放射率が低い異放射率部材が設けられていることによって基板6に温度分布を生じてしまう場合については、異放射率領域14を他の領域よりも放射率が高い領域とすることで対応することができる。   The above example is a case where the emissivity of the different emissivity member (the wiring 13 in the above example) is lower than that of the substrate 6, but the different emissivity member having an emissivity lower than that of the substrate 6 is provided. In the case where the temperature distribution occurs, the different emissivity region 14 can be dealt with by making the emissivity region higher than other regions.

異放射率領域14は、画像表示パネル用基板6の上下面(表裏面)にそれぞれ対面する冷却板12a,12bにそれぞれ設けることが最も好ましいが、いずれか一方のみとすることもできる。いずれか一方のみとする場合、異放射率部材が設けられた基板6の面と対面する側の冷却板12aまたは12bに設けることが好ましい。   The different emissivity region 14 is most preferably provided on each of the cooling plates 12a and 12b facing the upper and lower surfaces (front and back surfaces) of the image display panel substrate 6, but may be only one of them. When only one of them is provided, it is preferably provided on the cooling plate 12a or 12b on the side facing the surface of the substrate 6 on which the different emissivity member is provided.

冷却板12a,12bの基板6との対向面における異放射率領域14以外の領域の放射率をさらに下げたいときには、この領域を研磨処理することによって放射率を下げることができる。   When it is desired to further reduce the emissivity of a region other than the different emissivity region 14 on the surface of the cooling plates 12a and 12b facing the substrate 6, the emissivity can be lowered by polishing the region.

ところで、画像表示パネル用の基板6は、画像表示パネルの製造過程で、種々の状態で加熱および冷却処理を受ける。例えば、前記電子源基板や蛍光体基板の製造に際しては、電子放出素子、配線13、蛍光体などを設ける前に、基板6単独の状態で、付着性分を除去するためのベーキングと称される加熱処理を受けた後に冷却される。この基板6単独の状態は表裏面共にほぼ放射率が均一な状態である。基板6が単独の場合、冷却板12a,12bの基板6と対向する面の中央部分に、図5に示されるような円形または図6に示されるような楕円形で、その他の領域に比して放射率が高い異放射率領域14を設けることが好ましい。このようにすることによって、熱放射面が広いことで冷却されやすい基板6の周縁部に比して冷却が遅れる基板6中央部の冷却を促すことができ、冷却に伴って基板6に生じる温度分布を抑制することができる。円形の異放射率領域14は基板6がほぼ正方形である場合に適しており、楕円形の異放射率領域14は基板6が長方形である場合に適している。   By the way, the substrate 6 for an image display panel is subjected to heating and cooling processes in various states during the manufacturing process of the image display panel. For example, when manufacturing the electron source substrate or the phosphor substrate, it is referred to as baking for removing adhesive components in the state of the substrate 6 alone before providing the electron-emitting device, the wiring 13, the phosphor, and the like. It is cooled after receiving the heat treatment. The state of the substrate 6 alone is a state in which the emissivity is substantially uniform on both the front and back surfaces. When the substrate 6 is alone, the cooling plate 12a, 12b has a circular shape as shown in FIG. 5 or an ellipse shape as shown in FIG. It is preferable to provide the different emissivity region 14 having a high emissivity. By doing so, it is possible to promote the cooling of the central portion of the substrate 6 where the cooling is delayed compared to the peripheral portion of the substrate 6 that is easily cooled due to the wide heat radiation surface, and the temperature generated in the substrate 6 due to the cooling. Distribution can be suppressed. The circular different emissivity region 14 is suitable when the substrate 6 is substantially square, and the elliptical different emissivity region 14 is suitable when the substrate 6 is rectangular.

また、画像表示パネル用の基板6が前記電子源基板の場合、配線13と共に、配線13の形成領域内にガラスなどのスペーサー(図示されていない)が突設された状態で処理を受けることがある。このスペーサーは、細く熱容量が非常に小さいため、冷却時には急速に冷却されてしまう。そのため、スペーサーが急冷されて、基板6との温度差が大きくなると、熱膨張の差でスペーサーに割れが生じやすくなる。   Further, when the image display panel substrate 6 is the electron source substrate, the substrate may be subjected to processing in a state where a spacer (not shown) such as glass protrudes in the formation region of the wiring 13 together with the wiring 13. is there. Since this spacer is thin and has a very small heat capacity, it is cooled rapidly during cooling. Therefore, when the spacer is rapidly cooled and the temperature difference from the substrate 6 becomes large, the spacer is likely to crack due to the difference in thermal expansion.

そこで、このように基板6に配線13と共にスペーサーが設けられた画像表示パネル用の基板6の冷却においては、配線13の形成領域に概略対応して設けられる、放射率の高い前記異放射率領域14は、配線13とスペーサーが設けられた基板6の面と対面する冷却板11aではなく、基板6の裏面と対面する冷却板11bとし、冷却板11aは、この放射率の高い異放射率領域14を有さないものとすることが好ましい。   Therefore, in the cooling of the substrate 6 for an image display panel in which the spacers are provided on the substrate 6 together with the wirings 13 as described above, the different emissivity region having a high emissivity provided substantially corresponding to the formation region of the wirings 13. 14 is not the cooling plate 11a facing the surface of the substrate 6 provided with the wiring 13 and the spacer, but the cooling plate 11b facing the back surface of the substrate 6, and the cooling plate 11a has a different emissivity region having a high emissivity. It is preferable not to have 14.

次に、図7に基づいて、画像表示パネルの製造装置の一部として用いられる、本発明に係る冷却装置を有する加熱・冷却装置の第2の例を説明する。   Next, a second example of the heating / cooling device having the cooling device according to the present invention, which is used as a part of the image display panel manufacturing device, will be described with reference to FIG.

本例に係る加熱・冷却装置は、図1及び図2に示される加熱装置2と冷却装置3を一体にしたもので、画像表示パネル用の基板6を出し入れするためのシャッター70を有する真空チャンバー71内に、基板6をほぼ水平に支持するための支持ピン72と、この支持ピン72で支持された基板6の上下面に対面する位置にそれぞれ設けられた冷却板73a,73bと、基板6と冷却板73a,73b間にそれぞれ間隔をあけて並列設置された線または棒状のヒーター74a,74bとを備えたものとなっている。また、冷却板73a,73bはそれぞれ冷却経路75a,75bを有するものとなっている。   The heating / cooling device according to this example is an integrated unit of the heating device 2 and the cooling device 3 shown in FIGS. 1 and 2, and a vacuum chamber having a shutter 70 for taking in and out the substrate 6 for an image display panel. 71, support pins 72 for supporting the substrate 6 substantially horizontally, cooling plates 73a and 73b respectively provided at positions facing the upper and lower surfaces of the substrate 6 supported by the support pins 72, and the substrate 6 And cooling plates 73a and 73b are provided with wire or rod heaters 74a and 74b arranged in parallel with a space between them. The cooling plates 73a and 73b have cooling paths 75a and 75b, respectively.

本例における冷却板73a,73bは、前記第1の例における冷却板11a,11bと同様に、基板6の状態に応じて、異放射率領域14(図4〜図6参照)を有するものとなっている。   The cooling plates 73a and 73b in the present example have different emissivity regions 14 (see FIGS. 4 to 6) according to the state of the substrate 6, similarly to the cooling plates 11a and 11b in the first example. It has become.

本例の加熱・冷却装置における加熱は、シャッター70を開いて基板6をヒーター74a,74b間(冷却板73a,73b間)で支持ピン72に支持させた後、シャッター70を閉じた状態でヒーター74を作動させることで行われる。また、加熱した基板6の冷却は、基板6を移動させることなく、そのままの状態でヒーター74a,74bを止め、冷却経路75a,75bに冷媒を流し、第1の例で説明したように、冷却板73a,73bに設けた異放射率領域14(図4〜図6参照)で基板6の温度分布を抑制しながら行われる。この冷却時に、基板6からの放射熱の冷却板73a,73bによる吸収をできるだけ妨げないよう、ヒーター74a,74bは断面円形で、できるだけ細いものであることが好ましい。   Heating in the heating / cooling apparatus of this example is performed by opening the shutter 70 and supporting the substrate 6 on the support pins 72 between the heaters 74a and 74b (between the cooling plates 73a and 73b) and then closing the shutter 70. This is done by actuating 74. In addition, the heated substrate 6 is cooled without stopping the substrate 6 by stopping the heaters 74a and 74b and flowing the refrigerant through the cooling paths 75a and 75b, as described in the first example. This is performed while suppressing the temperature distribution of the substrate 6 in the different emissivity region 14 (see FIGS. 4 to 6) provided on the plates 73a and 73b. It is preferable that the heaters 74a and 74b have a circular cross section and be as thin as possible so as not to hinder absorption of the radiant heat from the substrate 6 by the cooling plates 73a and 73b as much as possible during this cooling.

本発明は、上述した例で取上げた基板6、すなわちガラスに限定されることはない。例えば、冷却対象の主な材料がガラスではなく、SiCのようなセラミックのように、分光放射率ελが全ての波長において比較的一定である特性に近いものであるとしても、同様の形態で実施することができる。しかし、その際には、波長を限定した分光放射率ελではなく、全放射率εを放射率とする。すなわち、本発明における放射率とは、その冷却対象の特性により、分光放射率ελのことであり、あるいは全放射率εのことである。また、その測定の際には、プロセスにみあった温度での測定を行う。   The present invention is not limited to the substrate 6 taken up in the above-described example, that is, glass. For example, even if the main material to be cooled is not glass but ceramic such as SiC, the spectral emissivity ελ is close to a characteristic that is relatively constant at all wavelengths. can do. However, in that case, the total emissivity ε is used as the emissivity, not the spectral emissivity ελ with a limited wavelength. That is, the emissivity in the present invention is the spectral emissivity ελ or the total emissivity ε depending on the characteristics of the cooling target. In addition, the measurement is performed at a temperature suitable for the process.

画像表示パネルの製造装置の一部として用いられる、本発明に係る冷却装置を有する加熱・冷却装置の第1の例を示す、基板を加熱している状態の模式的説明図である。It is a typical explanatory view in the state where the substrate is heated showing the 1st example of the heating and cooling device which has a cooling device concerning the present invention used as a part of a manufacturing device of an image display panel. 図1の加熱・冷却装置で基板を冷却している状態を示す模式的説明図である。It is typical explanatory drawing which shows the state which is cooling the board | substrate with the heating / cooling apparatus of FIG. 処理対象の一例である、片面に配線を有する基板の平面図である。It is a top view of the board | substrate which has wiring on the single side | surface which is an example of a process target. 図3に示される基板が有する配線の形成領域に概略対応して設けられた異放射率領域のパターンを示す図である。It is a figure which shows the pattern of the different emissivity area | region provided substantially corresponding to the formation area of the wiring which the board | substrate shown in FIG. 3 has. 異放射率領域の他のパターンを示す図である。It is a figure which shows the other pattern of a different emissivity area | region. 異放射率領域のさらに他のパターンを示す図である。It is a figure which shows the other pattern of a different emissivity area | region. 画像表示パネルの製造装置の一部として用いられる、本発明に係る冷却装置を有する加熱・冷却装置の第2の例を示す模式的説明図である。It is typical explanatory drawing which shows the 2nd example of the heating and cooling device which has a cooling device based on this invention used as a part of manufacturing apparatus of an image display panel.

符号の説明Explanation of symbols

1 真空チャンバー
2 加熱装置
3 冷却装置
4 ガイド
5 駆動ユニット
6 基板
7 支持アーム
8a,8b ヒーター
9 リフレクター
10 シャッター
11a,11b 冷却板
12a,12b 冷却経路
13 配線(異放射率部材)
14 異放射率領域
70 シャッター
71 真空チャンバー
72 支持ピン
73a,73b 冷却板
74a,74b ヒーター
75a,75b 冷却経路
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Heating device 3 Cooling device 4 Guide 5 Drive unit 6 Substrate 7 Support arm 8a, 8b Heater 9 Reflector 10 Shutter 11a, 11b Cooling plate 12a, 12b Cooling path 13 Wiring (different emissivity member)
14 Different Emissivity Area 70 Shutter 71 Vacuum Chamber 72 Support Pin 73a, 73b Cooling Plate 74a, 74b Heater 75a, 75b Cooling Path

Claims (7)

内部が真空雰囲気に保たれる真空チャンバー内で、基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する冷却装置において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されていることを特徴とする冷却装置。
In a cooling device that cools a substrate by facing a cooling plate in a vacuum chamber in which the inside is maintained in a vacuum atmosphere and absorbs radiant heat from the substrate,
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one surface of the substrate, and the substrate having the different emissivity member is radiated on a surface of the cooling plate facing the substrate. When the cooling plate is cooled with a uniform rate, the temperature distribution generated in the substrate due to the difference in emissivity between the substrate and the different emissivity member can be reduced. The coating layer has an emissivity different from that of the cooling plate. A cooling device characterized by being formed .
内部が真空雰囲気に保たれる真空チャンバー内に、基板を加熱する加熱装置と、該加熱装置で加熱された前記基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する冷却装置とを備えた画像表示パネルの製造装置において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されていることを特徴とする画像表示パネルの製造装置。
Inside the vacuum chamber where the inside is maintained in a vacuum atmosphere, a heating device that heats the substrate, and a cooling plate that faces the substrate heated by the heating device, absorbs radiant heat from the substrate and cools it. In an image display panel manufacturing apparatus comprising a cooling device,
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one surface of the substrate, and the substrate having the different emissivity member is radiated on a surface of the cooling plate facing the substrate. If the rate was cooled with uniform cooling plate, in a pattern that can reduce the temperature distribution generated in the substrate due to the difference in emissivity of the substrate and the different emissivity member, a coating layer emissivity is different from the cooling plate An apparatus for manufacturing an image display panel, which is formed .
前記異放射率部材が、前記基板の片面に形成された前記基板より放射率が低い配線であり、前記コーティング層は、概略前記配線の形成領域に対応するパターンで設けられ前記冷却板よりも放射率が高いことを特徴とする請求項に記載の画像表示パネルの製造装置。 The different emissivity member is a wire emissivity is lower than the substrate formed on one surface of said substrate, said coating layer, than the cooling plate is provided in a pattern corresponding to a formation region of schematic the wiring the image display panel manufacturing apparatus according to claim 2, wherein the emissivity is high. 前記配線が形成された前記基板の片面に、前記配線と共にスペーサが突設されており、前記コーティング層が設けられた冷却板が、前記基板の他面側に位置していることを特徴とする請求項に記載の画像表示パネルの製造装置。 On one surface of the substrate on which the wiring is formed, the are spacer with wiring is projected, the cooling plate, wherein the coating layer is provided, characterized in that it is located on the other side of the substrate The apparatus for manufacturing an image display panel according to claim 3 . 真空雰囲気内で、基板を加熱した後、該加熱した基板を、当該基板に冷却板を対面させて、該基板からの放射熱を吸収して冷却する工程を有する画像表示パネルの製造方法において、
前記基板の少なくとも片面の一部に、当該基板とは放射率が異なる異放射率部材が設けられており、前記冷却板として、前記冷却板の前記基板との対向面に、前記異放射率部材を有する基板を放射率が均一な冷却板で冷却した場合に、前記基板と前記異放射率部材の放射率の相違により前記基板に生じる温度分布を軽減できるパターンで、前記冷却板とは放射率が異なるコーティング層が形成されているものを用いることを特徴とする画像表示パネルの製造方法。
In a vacuum atmosphere, after heating the substrate, a board which heated the pressurized, so as to face the cooling plate on the substrate, method of manufacturing an image display panel having a step of cooling by absorbing radiant heat from the substrate In
A different emissivity member having an emissivity different from that of the substrate is provided on at least a part of one side of the substrate, and the different emissivity member is provided on the surface of the cooling plate facing the substrate as the cooling plate. when cooled with uniform cooling plate emissivity of the substrate having, in a pattern that can reduce the temperature distribution generated in the substrate due to the difference in emissivity of the substrate and the different emissivity member, emissivity and the cooling plate A method for producing an image display panel, wherein a coating layer having a different coating layer is used.
前記異放射率部材が、前記基板の片面に形成された前記基板より放射率が低い配線であり、前記コーティング層は、概略前記配線の形成領域に対応するパターンで設けられ前記冷却板よりも放射率が高いことを特徴とする請求項に記載の画像表示パネルの製造方法。 The different emissivity member, than the substrate formed on one surface of the substrate is lower wiring emissivity, the coating layer is provided in a pattern corresponding to a formation region of schematic the wiring from the cooling plate The method of manufacturing an image display panel according to claim 5 , wherein emissivity is high . 前記配線が形成された前記基板の片面に、前記配線と共にスペーサが突設されており、前記コーティング層が設けられた冷却板を、前記基板の他面側に位置させることを特徴とする請求項に記載の画像表示パネルの製造方法。 On one surface of the substrate on which the wiring is formed, the wiring and the spacer is projected with, claims a cooling plate, wherein the coating layer is provided, characterized in that is positioned on the other surface of the substrate 6. A method for producing an image display panel according to 6 .
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