JP4323124B2 - 発光装置及び電子機器 - Google Patents
発光装置及び電子機器 Download PDFInfo
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- JP4323124B2 JP4323124B2 JP2001382530A JP2001382530A JP4323124B2 JP 4323124 B2 JP4323124 B2 JP 4323124B2 JP 2001382530 A JP2001382530 A JP 2001382530A JP 2001382530 A JP2001382530 A JP 2001382530A JP 4323124 B2 JP4323124 B2 JP 4323124B2
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- 239000010410 layer Substances 0.000 description 134
- 238000000034 method Methods 0.000 description 56
- 150000002894 organic compounds Chemical class 0.000 description 55
- 239000012535 impurity Substances 0.000 description 45
- 239000011229 interlayer Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 239000000126 substance Substances 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- -1 polyphenylene vinylene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100173447 Caenorhabditis elegans ger-1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001382530A JP4323124B2 (ja) | 2000-12-21 | 2001-12-17 | 発光装置及び電子機器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000388990 | 2000-12-21 | ||
JP2000-388990 | 2000-12-21 | ||
JP2001382530A JP4323124B2 (ja) | 2000-12-21 | 2001-12-17 | 発光装置及び電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002278478A JP2002278478A (ja) | 2002-09-27 |
JP2002278478A5 JP2002278478A5 (fr) | 2005-07-28 |
JP4323124B2 true JP4323124B2 (ja) | 2009-09-02 |
Family
ID=26606288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001382530A Expired - Fee Related JP4323124B2 (ja) | 2000-12-21 | 2001-12-17 | 発光装置及び電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4323124B2 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4822590B2 (ja) * | 2001-02-08 | 2011-11-24 | 三洋電機株式会社 | 有機el回路 |
US6909240B2 (en) | 2002-01-18 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2004077567A (ja) | 2002-08-09 | 2004-03-11 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法 |
JP4172250B2 (ja) * | 2002-11-01 | 2008-10-29 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法及び電子機器 |
US7271784B2 (en) | 2002-12-18 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
US6771028B1 (en) * | 2003-04-30 | 2004-08-03 | Eastman Kodak Company | Drive circuitry for four-color organic light-emitting device |
JP2005234486A (ja) * | 2004-02-23 | 2005-09-02 | Tohoku Pioneer Corp | 自発光表示パネルの駆動装置および駆動方法 |
JP4854182B2 (ja) | 2004-04-16 | 2012-01-18 | 三洋電機株式会社 | 表示装置 |
JP2007041560A (ja) * | 2005-07-04 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の駆動方法 |
US7898623B2 (en) * | 2005-07-04 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device and method of driving display device |
US20070001954A1 (en) | 2005-07-04 | 2007-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
US7863612B2 (en) | 2006-07-21 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and semiconductor device |
JP4968857B2 (ja) * | 2006-08-07 | 2012-07-04 | パイオニア株式会社 | 画素駆動装置及び画素駆動方法 |
KR101547574B1 (ko) | 2007-12-03 | 2015-08-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치용 tft 배치 |
JP2010122493A (ja) * | 2008-11-20 | 2010-06-03 | Eastman Kodak Co | 表示装置 |
JP5686122B2 (ja) * | 2012-08-24 | 2015-03-18 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
KR102641867B1 (ko) * | 2018-11-23 | 2024-03-04 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 구동 방법 |
US10643529B1 (en) * | 2018-12-18 | 2020-05-05 | Himax Technologies Limited | Method for compensation brightness non-uniformity of a display panel, and associated display device |
JP2021071593A (ja) * | 2019-10-30 | 2021-05-06 | キヤノン株式会社 | 表示装置、情報表示装置、及び電子機器 |
-
2001
- 2001-12-17 JP JP2001382530A patent/JP4323124B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2002278478A (ja) | 2002-09-27 |
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