JP4307989B2 - スパッタリング用ターゲット組立体およびその製造方法 - Google Patents
スパッタリング用ターゲット組立体およびその製造方法 Download PDFInfo
- Publication number
- JP4307989B2 JP4307989B2 JP2003502263A JP2003502263A JP4307989B2 JP 4307989 B2 JP4307989 B2 JP 4307989B2 JP 2003502263 A JP2003502263 A JP 2003502263A JP 2003502263 A JP2003502263 A JP 2003502263A JP 4307989 B2 JP4307989 B2 JP 4307989B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- support plate
- insert
- target insert
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (9)
- スパッタリング用ターゲット組立体(30)の製造方法において、該方法が、
a)降伏強さ、直径、高さ、平坦な上面および円錐形裏面(12)を有し、ほぼ最終形状を有するターゲット・インサート(10)を製造する段階と、
b)前記ターゲット・インサート(10)の直径に一致し、前記ターゲット・インサート(10)の高さよりも小さい深さを有し、前記ターゲット・インサート(10)の降伏強さよりも小さい降伏強さを有する円筒形凹部(22)を有する支持板(20)を製造する段階と、
c)前記ターゲット・インサート(10)を前記支持板(20)の前記円筒形凹部(22)中に、塑性変形状態でプレスすることにより、前記ターゲット・インサート(10)を前記支持板(20)に拡散接合して、前記円錐形裏面(12)を有する前記ターゲット・インサート(10)を含む前記ターゲット組立体(30)を形成する段階とを含む、スパッタリング用ターゲット組立体の製造方法。 - 前記ターゲット・インサート(10)の前記円錐形裏面(12)と前記支持板(20)との接合を改善するために、前記ターゲット・インサート(10)および前記支持板(20)を約200℃より高い温度に少なくとも1時間保持する追加の段階を含む請求項1に記載されたスパッタリング用ターゲット組立体の製造方法。
- スパッタリング用ターゲット組立体(30)の製造方法であって、該方法が、
a)降伏強さ、直径、高さ、平坦な上面および切頭円錐形裏面(12)を有するターゲット・インサート(10)をほぼ最終形状にプレスする段階と、
b)前記ターゲット・インサート(10)の直径に一致し、前記ターゲット・インサート(10)の高さよりも小さい深さを有し、前記ターゲット・インサート(10)の降伏強さよりも小さい降伏強さを有する円筒形凹部(22)を有する支持板(20)を製造する段階と、
c)前記ターゲット・インサート(10)を前記支持板(20)の前記円筒形凹部(22)中に、塑性変形状態で熱間プレスすることにより、前記ターゲット・インサート(10)を前記支持板(20)の前記円筒形凹部(22)に拡散接合して、切頭円錐形裏面(12)を有する前記ターゲット・インサート(10)を含む前記ターゲット組立体(30)を形成する段階とを含む、スパッタリング用ターゲット組立体の製造方法。 - 前記円筒形凹部(22)がある体積を有し、前記ターゲット・インサート(10)がある体積を有し、前記円筒形凹部(22)の体積が前記ターゲット・インサート(10)の体積の90〜120パーセントである請求項3に記載されたスパッタリング用ターゲット組立体の製造方法。
- 前記円筒形凹部(22)がある体積を有し、前記ターゲット・インサート(10)がある体積を有し、前記円筒形凹部(22)の体積が前記ターゲット・インサート(10)の体積にほぼ等しい請求項3に記載されたスパッタリング用ターゲット組立体の製造方法。
- 円筒形支持板(20)とターゲット・インサート(10)とを含むスパッタリング用ターゲット組立体において
前記支持板(20)が、平坦な上面を有し、該上面に凹部(22)を有し、
前記ターゲット・インサート(10)が、前記支持板(20)の前記凹部(22)で前記支持板(20)に接合され、
前記ターゲット・インサート(10)が、ほぼ最終形状を有し、平坦な上面および裏面(12)を有し、
前記裏面(12)の表面積の少なくとも約50パーセントが円錐形であり、
前記裏面(12)が、前記支持板(20)に接合されることにより、前記ターゲット・インサート(10)を前記支持板(20)に固定し、
前記凹部が、前記ターゲット・インサートの形状に塑性変形して、ターゲット組立体(30)を形成するスパッタリング用ターゲット組立体。 - 前記凹部(22)が前記ターゲット・インサート(10)の形状に一致する形状を有する請求項6に記載されたスパッタリング用ターゲット組立体。
- 前記ターゲット・インサート(10)と前記支持板(20)との間の反応生成物が、前記ターゲット・インサート(10)を前記支持板(20)に接合する請求項6に記載されたスパッタリング用ターゲット組立体。
- 円錐形界面が前記ターゲット・インサート(10)を前記支持板(20)に接合する請求項6に記載されたスパッタリング用ターゲット組立体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/870,164 US6599405B2 (en) | 2001-05-30 | 2001-05-30 | Recessed sputter target |
PCT/US2002/014302 WO2002099157A1 (en) | 2001-05-30 | 2002-05-08 | Recessed sputter target |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004530048A JP2004530048A (ja) | 2004-09-30 |
JP4307989B2 true JP4307989B2 (ja) | 2009-08-05 |
Family
ID=25354893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003502263A Expired - Fee Related JP4307989B2 (ja) | 2001-05-30 | 2002-05-08 | スパッタリング用ターゲット組立体およびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6599405B2 (ja) |
EP (1) | EP1392884B1 (ja) |
JP (1) | JP4307989B2 (ja) |
KR (1) | KR100885770B1 (ja) |
CN (1) | CN1229515C (ja) |
IL (2) | IL158993A0 (ja) |
TW (1) | TW593709B (ja) |
WO (1) | WO2002099157A1 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6848608B2 (en) * | 2002-10-01 | 2005-02-01 | Cabot Corporation | Method of bonding sputtering target materials |
US7425093B2 (en) * | 2003-07-16 | 2008-09-16 | Cabot Corporation | Thermography test method and apparatus for bonding evaluation in sputtering targets |
US20050051606A1 (en) * | 2003-09-09 | 2005-03-10 | Rene Perrot | Method of manufacturing an extended life sputter target assembly and product thereof |
US7431195B2 (en) * | 2003-09-26 | 2008-10-07 | Praxair S.T. Technology, Inc. | Method for centering a sputter target onto a backing plate and the assembly thereof |
US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US20050236270A1 (en) * | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
KR100876573B1 (ko) * | 2004-11-17 | 2008-12-31 | 닛코 킨조쿠 가부시키가이샤 | 스퍼터링 타겟 - 백킹 플레이트 조립체 및 막 형성 장치 |
US7708868B2 (en) * | 2005-07-08 | 2010-05-04 | Tosoh Smd, Inc. | Variable thickness plate for forming variable wall thickness physical vapor deposition target |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US20080041720A1 (en) * | 2006-08-14 | 2008-02-21 | Jaeyeon Kim | Novel manufacturing design and processing methods and apparatus for PVD targets |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) * | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US20090255808A1 (en) * | 2008-04-11 | 2009-10-15 | Seagate Technology Llc | Target for efficient use of precious deposition material |
CN101648320B (zh) * | 2009-05-08 | 2012-06-27 | 宁波江丰电子材料有限公司 | 靶材与背板的焊接方法 |
US8992747B2 (en) * | 2010-03-12 | 2015-03-31 | Applied Materials, Inc. | Apparatus and method for improved darkspace gap design in RF sputtering chamber |
CN101811209A (zh) * | 2010-04-14 | 2010-08-25 | 宁波江丰电子材料有限公司 | 靶材组件的制作方法 |
US9771646B2 (en) * | 2011-04-21 | 2017-09-26 | View, Inc. | Lithium sputter targets |
CN103814151B (zh) | 2011-06-27 | 2016-01-20 | 梭莱有限公司 | Pvd靶材及其铸造方法 |
WO2013003065A2 (en) | 2011-06-30 | 2013-01-03 | Soladigm, Inc. | Sputter target and sputtering methods |
US9057126B2 (en) * | 2011-11-29 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target and method for manufacturing semiconductor device |
CN103658898B (zh) * | 2012-09-20 | 2016-03-16 | 宁波江丰电子材料股份有限公司 | 靶材组件焊接方法 |
CN104416281B (zh) * | 2013-08-26 | 2017-05-17 | 宁波江丰电子材料股份有限公司 | 靶材组件及其制造方法 |
CN104561917A (zh) * | 2014-12-02 | 2015-04-29 | 深圳市华星光电技术有限公司 | 一种真空离子溅镀靶材装置 |
TWI655996B (zh) * | 2015-05-15 | 2019-04-11 | 美商萬騰榮公司 | 用於濺鍍靶材表面製備的方法 |
JP6277309B2 (ja) | 2016-07-13 | 2018-02-07 | 住友化学株式会社 | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
JP6271798B2 (ja) | 2016-07-13 | 2018-01-31 | 住友化学株式会社 | スパッタリングターゲットの製造方法 |
KR102602409B1 (ko) | 2019-03-28 | 2023-11-16 | 제이엑스금속주식회사 | 스퍼터링 타깃 제품 및 스퍼터링 타깃 제품의 재생품을 제조하는 방법 |
CN113967781A (zh) * | 2021-11-01 | 2022-01-25 | 宁波江丰电子材料股份有限公司 | 一种包套结构和焊接方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
JPS61183467A (ja) * | 1985-02-08 | 1986-08-16 | Hitachi Ltd | スパッタリング方法及びその装置 |
US5226469A (en) * | 1987-07-01 | 1993-07-13 | Kawasaki Jukogyo Kabushiki Kaisha | Composite structures and methods of manufacturing the same |
KR100231397B1 (ko) * | 1991-01-28 | 1999-11-15 | 튜그룰 야사르 | 음극 스퍼터링용 타겟 |
US5230459A (en) * | 1992-03-18 | 1993-07-27 | Tosoh Smd, Inc. | Method of bonding a sputter target-backing plate assembly assemblies produced thereby |
US5397050A (en) * | 1993-10-27 | 1995-03-14 | Tosoh Smd, Inc. | Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby |
US5522535A (en) | 1994-11-15 | 1996-06-04 | Tosoh Smd, Inc. | Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies |
US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US5836506A (en) | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
US5857611A (en) * | 1995-08-16 | 1999-01-12 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
US6071389A (en) | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
EP1115899B1 (en) * | 1998-09-11 | 2006-04-12 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
US6092427A (en) | 1999-09-15 | 2000-07-25 | Praxair S.T. Technology, Inc. | Method of testing a bond interface |
-
2001
- 2001-05-30 US US09/870,164 patent/US6599405B2/en not_active Expired - Lifetime
-
2002
- 2002-05-08 CN CNB028108027A patent/CN1229515C/zh not_active Expired - Fee Related
- 2002-05-08 KR KR1020037015672A patent/KR100885770B1/ko active IP Right Grant
- 2002-05-08 EP EP02776556A patent/EP1392884B1/en not_active Expired - Lifetime
- 2002-05-08 JP JP2003502263A patent/JP4307989B2/ja not_active Expired - Fee Related
- 2002-05-08 WO PCT/US2002/014302 patent/WO2002099157A1/en active Application Filing
- 2002-05-08 IL IL15899302A patent/IL158993A0/xx active IP Right Grant
- 2002-05-28 TW TW091111339A patent/TW593709B/zh not_active IP Right Cessation
-
2003
- 2003-11-20 IL IL158993A patent/IL158993A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20040007630A (ko) | 2004-01-24 |
EP1392884A1 (en) | 2004-03-03 |
IL158993A0 (en) | 2004-05-12 |
EP1392884A4 (en) | 2007-07-25 |
IL158993A (en) | 2006-12-31 |
CN1527887A (zh) | 2004-09-08 |
JP2004530048A (ja) | 2004-09-30 |
WO2002099157A1 (en) | 2002-12-12 |
TW593709B (en) | 2004-06-21 |
KR100885770B1 (ko) | 2009-02-26 |
US6599405B2 (en) | 2003-07-29 |
US20020185372A1 (en) | 2002-12-12 |
CN1229515C (zh) | 2005-11-30 |
EP1392884B1 (en) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4307989B2 (ja) | スパッタリング用ターゲット組立体およびその製造方法 | |
JP4902860B2 (ja) | 長寿命スパッタ用ターゲット | |
KR100602767B1 (ko) | 접합된 스퍼터 타겟/배면 플레이트 조립체 형성 방법 | |
JP5563456B2 (ja) | 結合したターゲットアセンブリ用のターゲット設計および関連方法、その製造および使用の方法 | |
KR100764269B1 (ko) | 스퍼터 타겟 조립체의 제조 방법 | |
JP4672834B2 (ja) | スパッタリングターゲットを受け板に接合する方法 | |
JP2010523812A (ja) | 接合されたスパッタリングターゲット及び製造方法 | |
US20120228131A1 (en) | Method for consolidating and diffusion-bonding powder metallurgy sputtering target | |
KR20210092283A (ko) | 스퍼터링 타깃 제품 및 스퍼터링 타깃 제품의 재생품을 제조하는 방법 | |
US6723213B2 (en) | Titanium target assembly for sputtering and method for preparing the same | |
US8123107B2 (en) | Method for forming sputter target assemblies |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050428 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080516 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080818 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080912 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20081219 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20090127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090327 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090430 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4307989 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140515 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |