IL158993A0 - Recessed sputter target - Google Patents

Recessed sputter target

Info

Publication number
IL158993A0
IL158993A0 IL15899302A IL15899302A IL158993A0 IL 158993 A0 IL158993 A0 IL 158993A0 IL 15899302 A IL15899302 A IL 15899302A IL 15899302 A IL15899302 A IL 15899302A IL 158993 A0 IL158993 A0 IL 158993A0
Authority
IL
Israel
Prior art keywords
sputter target
recessed
recessed sputter
target
sputter
Prior art date
Application number
IL15899302A
Other languages
English (en)
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of IL158993A0 publication Critical patent/IL158993A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
IL15899302A 2001-05-30 2002-05-08 Recessed sputter target IL158993A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/870,164 US6599405B2 (en) 2001-05-30 2001-05-30 Recessed sputter target
PCT/US2002/014302 WO2002099157A1 (en) 2001-05-30 2002-05-08 Recessed sputter target

Publications (1)

Publication Number Publication Date
IL158993A0 true IL158993A0 (en) 2004-05-12

Family

ID=25354893

Family Applications (2)

Application Number Title Priority Date Filing Date
IL15899302A IL158993A0 (en) 2001-05-30 2002-05-08 Recessed sputter target
IL158993A IL158993A (en) 2001-05-30 2003-11-20 The purpose of the thesis is submerged

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL158993A IL158993A (en) 2001-05-30 2003-11-20 The purpose of the thesis is submerged

Country Status (8)

Country Link
US (1) US6599405B2 (ja)
EP (1) EP1392884B1 (ja)
JP (1) JP4307989B2 (ja)
KR (1) KR100885770B1 (ja)
CN (1) CN1229515C (ja)
IL (2) IL158993A0 (ja)
TW (1) TW593709B (ja)
WO (1) WO2002099157A1 (ja)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6848608B2 (en) * 2002-10-01 2005-02-01 Cabot Corporation Method of bonding sputtering target materials
US7425093B2 (en) * 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
US20050051606A1 (en) * 2003-09-09 2005-03-10 Rene Perrot Method of manufacturing an extended life sputter target assembly and product thereof
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
KR100876573B1 (ko) * 2004-11-17 2008-12-31 닛코 킨조쿠 가부시키가이샤 스퍼터링 타겟 - 백킹 플레이트 조립체 및 막 형성 장치
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080041720A1 (en) * 2006-08-14 2008-02-21 Jaeyeon Kim Novel manufacturing design and processing methods and apparatus for PVD targets
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090255808A1 (en) * 2008-04-11 2009-10-15 Seagate Technology Llc Target for efficient use of precious deposition material
CN101648320B (zh) * 2009-05-08 2012-06-27 宁波江丰电子材料有限公司 靶材与背板的焊接方法
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
CN101811209A (zh) * 2010-04-14 2010-08-25 宁波江丰电子材料有限公司 靶材组件的制作方法
US9771646B2 (en) * 2011-04-21 2017-09-26 View, Inc. Lithium sputter targets
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
WO2013003065A2 (en) 2011-06-30 2013-01-03 Soladigm, Inc. Sputter target and sputtering methods
US9057126B2 (en) * 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
CN103658898B (zh) * 2012-09-20 2016-03-16 宁波江丰电子材料股份有限公司 靶材组件焊接方法
CN104416281B (zh) * 2013-08-26 2017-05-17 宁波江丰电子材料股份有限公司 靶材组件及其制造方法
CN104561917A (zh) * 2014-12-02 2015-04-29 深圳市华星光电技术有限公司 一种真空离子溅镀靶材装置
TWI655996B (zh) * 2015-05-15 2019-04-11 美商萬騰榮公司 用於濺鍍靶材表面製備的方法
JP6277309B2 (ja) 2016-07-13 2018-02-07 住友化学株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP6271798B2 (ja) 2016-07-13 2018-01-31 住友化学株式会社 スパッタリングターゲットの製造方法
KR102602409B1 (ko) 2019-03-28 2023-11-16 제이엑스금속주식회사 스퍼터링 타깃 제품 및 스퍼터링 타깃 제품의 재생품을 제조하는 방법
CN113967781A (zh) * 2021-11-01 2022-01-25 宁波江丰电子材料股份有限公司 一种包套结构和焊接方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
US5226469A (en) * 1987-07-01 1993-07-13 Kawasaki Jukogyo Kabushiki Kaisha Composite structures and methods of manufacturing the same
KR100231397B1 (ko) * 1991-01-28 1999-11-15 튜그룰 야사르 음극 스퍼터링용 타겟
US5230459A (en) * 1992-03-18 1993-07-27 Tosoh Smd, Inc. Method of bonding a sputter target-backing plate assembly assemblies produced thereby
US5397050A (en) * 1993-10-27 1995-03-14 Tosoh Smd, Inc. Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby
US5522535A (en) 1994-11-15 1996-06-04 Tosoh Smd, Inc. Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5836506A (en) 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5857611A (en) * 1995-08-16 1999-01-12 Sony Corporation Sputter target/backing plate assembly and method of making same
US6071389A (en) 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
EP1115899B1 (en) * 1998-09-11 2006-04-12 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
US6092427A (en) 1999-09-15 2000-07-25 Praxair S.T. Technology, Inc. Method of testing a bond interface

Also Published As

Publication number Publication date
KR20040007630A (ko) 2004-01-24
JP4307989B2 (ja) 2009-08-05
EP1392884A1 (en) 2004-03-03
EP1392884A4 (en) 2007-07-25
IL158993A (en) 2006-12-31
CN1527887A (zh) 2004-09-08
JP2004530048A (ja) 2004-09-30
WO2002099157A1 (en) 2002-12-12
TW593709B (en) 2004-06-21
KR100885770B1 (ko) 2009-02-26
US6599405B2 (en) 2003-07-29
US20020185372A1 (en) 2002-12-12
CN1229515C (zh) 2005-11-30
EP1392884B1 (en) 2011-08-17

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