JP4299293B2 - 荷電ビーム描画装置 - Google Patents
荷電ビーム描画装置 Download PDFInfo
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- JP4299293B2 JP4299293B2 JP2005332998A JP2005332998A JP4299293B2 JP 4299293 B2 JP4299293 B2 JP 4299293B2 JP 2005332998 A JP2005332998 A JP 2005332998A JP 2005332998 A JP2005332998 A JP 2005332998A JP 4299293 B2 JP4299293 B2 JP 4299293B2
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- 238000001459 lithography Methods 0.000 title 1
- 238000012937 correction Methods 0.000 claims description 102
- 201000009310 astigmatism Diseases 0.000 claims description 70
- 230000035945 sensitivity Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 description 21
- 238000010894 electron beam technology Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
Sx=A1x+A2y+A3
Sy=B1x+B2y+B3
が演算され、副偏向非点補正回路43により、
Ax=S1x+S2y+S3
Ax=T1x+T2y+T3
が演算される。そして、副偏向感度補正回路42及び副偏向非点補正回路43の演算結果が加算器44によりタイミングを合わせて加算され、加算結果が副偏向アンプ34に供給される。
fn(x,y) = a0 + a1x + a2y + a3x2 + a4xy + a5y2 + a6x3 + a7x2y + a8xy2 + a9y3
で表現される。ここで、係数a0,1,2..9 はそれぞれの係数(A1,2,3,B1,2,3,S1,2,3,T1,2,3)に対して別々に持つことになる。なお、係数a0,1,2..9 は、ステージに取り付けられたマークを主偏向領域内の任意の位置へ少なくとも10箇所以上移動させて、それぞれの場所で副偏向感度と副偏向非点を測定して、これらの結果から係数を算出することができる。
A1 = fa1(Mxp,Myp),A2 = fa2(Mxp,Myp),A3 = fa3(Mxp,Myp)
B1 = fb1(Mxp,Myp),B2 = fb2(Mxp,Myp),B3 = fb3(Mxp,Myp)
S1 = fs1(Mxp,Myp),S2 = fs2(Mxp,Myp),S3 = fs3(Mxp,Myp)
T1 = ft1(Mxp,Myp),T2 = ft2(Mxp,Myp),T3 = ft3(Mxp,Myp)
と表現される。
SD2 = (Sx + Sy)/√2 + Ax
SD3 = Sy +(-Ay)
SD4 =(−Sx + Sy)/√2 +(−Ax)
SD5 = −Sx + Ay
SD6 =(−Sx − Sy)/√2 + Ax
SD7 = −Sy +(−Ay)
SD8 = (Sx − Sy)/√2 +(−Ax)
これらのデータを偏向アンプ(DAC/AMP)へ入力するとそれぞれの偏向電極に電圧を印加することができる。このようにして、偏向データに非点補正データを重畳させて静電偏向器に電圧が印加される。
Sy=B0+B1x+B2y+B3x2 +B4xy+B5y2
このように偏向感度補正精度を向上させ、最終出力を副偏向非点の出力とタイミングを合わせてから、加算演算しても高速性を損なわずに同様な非点補正の効果を得ることができる。
11…ウェハ(試料)
12…試料ステージ
20…電子光学鏡筒
21…電子銃
22…対物レンズ
23…副偏向器
24…主偏向器
30…制御計算機
31…レーザ干渉計
32…位置測定系
33…描画回路
34…副偏向アンプ
35…主偏向アンプ
41…補正係数メモリ
42…副偏向感度補正回路
43…副偏向非点補正回路
44…加算回路
Claims (2)
- 主・副2段の偏向器を備え、試料上の主偏向描画領域を副偏向器の偏向幅で決まるサブフィールドに分け、主偏向器でサブフィールドを選択し、選択したサブフィールド内で副偏向器によりショットを描画する荷電ビーム描画装置であって、
前記副偏向器を駆動するための副偏向駆動部は、サブフィールド内ショット位置に応じて偏向感度を補正する副偏向感度補正回路と、サブフィールド内ショット位置に応じて偏向非点を補正する副偏向非点補正回路と、前記副偏向感度補正回路の出力と前記副偏向非点補正回路の出力とを重畳する加算回路と、前記加算回路の出力を前記副偏向器に印加する偏向アンプとを具備し、
前記副偏向駆動部は、前記主偏向描画領域をメッシュに分割し、各々のメッシュ毎に副偏向感度補正係数及び副偏向非点補正係数を格納したメモリを有し、
前記副偏向感度補正回路及び副偏向非点補正回路は、前記選択されたサブフィールドの位置に対応する副偏向感度補正係数及び副偏向非点補正係数を前記メモリから読み出し、前記選択されたサブフィールド内ショット位置に応じて、前記読み出した補正係数を基にパイプライン方式により補正演算を実行することを特徴とする荷電ビーム描画装置。 - 前記副偏向感度補正回路と前記副偏向非点補正回路は、同じ段数のパイプライン回路で構成され、偏向感度の補正と偏向非点の補正のそれぞれを同時に並列演算し、前記加算回路は前記副偏向感度補正回路と前記副偏向非点補正回路の各出力をタイミングを合わせて加算することを特徴とする請求項1に記載の荷電ビーム描画装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005332998A JP4299293B2 (ja) | 2005-11-17 | 2005-11-17 | 荷電ビーム描画装置 |
JP2006047787A JP5025964B2 (ja) | 2005-11-17 | 2006-02-24 | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
TW095141955A TWI322460B (en) | 2005-11-17 | 2006-11-13 | Charged beam drawing apparatus and charged beam drawing method |
US11/560,127 US7476881B2 (en) | 2005-11-17 | 2006-11-15 | Charged beam drawing apparatus and charged beam drawing method |
KR1020060113203A KR100806482B1 (ko) | 2005-11-17 | 2006-11-16 | 대전 비임 드로잉 장치 및 대전 비임 드로잉 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005332998A JP4299293B2 (ja) | 2005-11-17 | 2005-11-17 | 荷電ビーム描画装置 |
JP2006047787A JP5025964B2 (ja) | 2005-11-17 | 2006-02-24 | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007142100A JP2007142100A (ja) | 2007-06-07 |
JP4299293B2 true JP4299293B2 (ja) | 2009-07-22 |
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JP2005332998A Active JP4299293B2 (ja) | 2005-11-17 | 2005-11-17 | 荷電ビーム描画装置 |
JP2006047787A Active JP5025964B2 (ja) | 2005-11-17 | 2006-02-24 | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
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JP2006047787A Active JP5025964B2 (ja) | 2005-11-17 | 2006-02-24 | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7476881B2 (ja) |
JP (2) | JP4299293B2 (ja) |
KR (1) | KR100806482B1 (ja) |
TW (1) | TWI322460B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007329267A (ja) * | 2006-06-07 | 2007-12-20 | Toshiba Corp | 荷電粒子線描画装置及び荷電粒子線描画方法 |
JP5095364B2 (ja) * | 2007-11-26 | 2012-12-12 | 株式会社ニューフレアテクノロジー | トラッキング制御方法および電子ビーム描画システム |
JP2011066236A (ja) * | 2009-09-17 | 2011-03-31 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP5809912B2 (ja) * | 2011-09-30 | 2015-11-11 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
JP6080540B2 (ja) * | 2012-12-26 | 2017-02-15 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
JP6262007B2 (ja) * | 2014-02-13 | 2018-01-17 | 株式会社ニューフレアテクノロジー | セトリング時間の取得方法 |
CN113296372B (zh) * | 2021-05-24 | 2022-01-28 | 北京大学 | 一种电子束曝光机用电子束静电偏转器控制系统及方法 |
Family Cites Families (10)
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JPH0713937B2 (ja) * | 1985-09-18 | 1995-02-15 | 富士通株式会社 | 電子ビ−ム露光方法 |
JP2946537B2 (ja) * | 1989-07-20 | 1999-09-06 | 株式会社ニコン | 電子光学鏡筒 |
JP2835097B2 (ja) | 1989-09-21 | 1998-12-14 | 株式会社東芝 | 荷電ビームの非点収差補正方法 |
JPH07201701A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 電子ビーム露光装置および露光方法 |
KR100202971B1 (en) | 1996-04-24 | 1999-06-15 | Fujitsu Ltd | Charged electron beam exposure pparatus and charged electron beam exposure method |
JP3393996B2 (ja) * | 1998-09-02 | 2003-04-07 | 株式会社東芝 | 荷電ビーム描画装置及び荷電ビームの非点収差補正方法 |
JP3449238B2 (ja) | 1998-09-18 | 2003-09-22 | 株式会社日立製作所 | 電子線描画装置 |
US6252412B1 (en) * | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
JP3577487B2 (ja) | 2002-05-24 | 2004-10-13 | 株式会社日立製作所 | 電子ビーム描画装置 |
JP3968334B2 (ja) * | 2002-09-11 | 2007-08-29 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び荷電粒子線照射方法 |
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2005
- 2005-11-17 JP JP2005332998A patent/JP4299293B2/ja active Active
-
2006
- 2006-02-24 JP JP2006047787A patent/JP5025964B2/ja active Active
- 2006-11-13 TW TW095141955A patent/TWI322460B/zh active
- 2006-11-15 US US11/560,127 patent/US7476881B2/en active Active
- 2006-11-16 KR KR1020060113203A patent/KR100806482B1/ko active IP Right Grant
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Publication number | Publication date |
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TW200731337A (en) | 2007-08-16 |
JP5025964B2 (ja) | 2012-09-12 |
TWI322460B (en) | 2010-03-21 |
US20070114461A1 (en) | 2007-05-24 |
JP2007142100A (ja) | 2007-06-07 |
US7476881B2 (en) | 2009-01-13 |
KR100806482B1 (ko) | 2008-02-21 |
KR20070052670A (ko) | 2007-05-22 |
JP2007227700A (ja) | 2007-09-06 |
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