JP4284642B2 - 刺激応答性多孔質高分子ゲル - Google Patents
刺激応答性多孔質高分子ゲル Download PDFInfo
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- JP4284642B2 JP4284642B2 JP2003073323A JP2003073323A JP4284642B2 JP 4284642 B2 JP4284642 B2 JP 4284642B2 JP 2003073323 A JP2003073323 A JP 2003073323A JP 2003073323 A JP2003073323 A JP 2003073323A JP 4284642 B2 JP4284642 B2 JP 4284642B2
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- gel
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003073323A JP4284642B2 (ja) | 2002-05-09 | 2003-03-18 | 刺激応答性多孔質高分子ゲル |
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JP2002134423 | 2002-05-09 | ||
JP2003073323A JP4284642B2 (ja) | 2002-05-09 | 2003-03-18 | 刺激応答性多孔質高分子ゲル |
Publications (3)
Publication Number | Publication Date |
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JP2004027195A JP2004027195A (ja) | 2004-01-29 |
JP2004027195A5 JP2004027195A5 (ru) | 2006-05-11 |
JP4284642B2 true JP4284642B2 (ja) | 2009-06-24 |
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JP2003073323A Expired - Fee Related JP4284642B2 (ja) | 2002-05-09 | 2003-03-18 | 刺激応答性多孔質高分子ゲル |
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JP (1) | JP4284642B2 (ru) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4945884B2 (ja) * | 2004-03-16 | 2012-06-06 | ソニー株式会社 | 多孔質炭素材料の製造方法 |
JP2005283296A (ja) * | 2004-03-29 | 2005-10-13 | Takatoshi Kinoshita | 被検物の光学的検出方法及び検出システム |
JP5120808B2 (ja) | 2005-04-28 | 2013-01-16 | 独立行政法人科学技術振興機構 | センサー素子およびこれを用いた外部刺激測定装置並びに外部刺激の測定方法 |
WO2007086306A1 (ja) * | 2006-01-30 | 2007-08-02 | Kinki University | 生分解性逆オパール構造体、その製造方法及び使用方法、並びに該生分解性逆オパール構造体からなる医療用インプラント |
JP4743017B2 (ja) | 2006-06-22 | 2011-08-10 | 豊田合成株式会社 | 赤外線反射材、赤外線反射積層体および赤外線反射構造体 |
JP4356779B2 (ja) | 2007-07-13 | 2009-11-04 | 豊田合成株式会社 | 赤外線反射材、赤外線反射積層体および赤外線反射構造体ならびにその製造方法 |
WO2009040826A2 (en) * | 2007-09-24 | 2009-04-02 | Secretary, Department Of Atomic Energy | Non-ionic porous, small solid resin with chemically bonded crown ether |
EP2052677A1 (en) * | 2007-10-23 | 2009-04-29 | Sensile Pat AG | Medical device for glucose monitoring or regulation |
JP5304065B2 (ja) * | 2008-07-11 | 2013-10-02 | コニカミノルタ株式会社 | 表示部材の製造方法 |
GB2473814B (en) * | 2009-09-16 | 2014-06-11 | Spheritech Ltd | Hollow particulate support |
JP5489921B2 (ja) * | 2010-08-25 | 2014-05-14 | 公立大学法人首都大学東京 | 高分子ゲル、その製造方法、水浄化処理剤及び水浄化処理方法 |
JP2012101355A (ja) * | 2011-12-28 | 2012-05-31 | Sony Corp | 多孔質炭素材料の製造方法 |
WO2016105039A1 (ko) * | 2014-12-26 | 2016-06-30 | 삼성전자 주식회사 | 고분자 겔 및 그 제조 방법 |
JP6577709B2 (ja) | 2014-12-26 | 2019-09-18 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ゲルの製造方法、並びに音響カプラーゲル |
JP6978102B2 (ja) * | 2017-05-15 | 2021-12-08 | ミリバット, インコーポレイテッドMillibatt, Inc. | 電解質の製造方法 |
JP7285841B2 (ja) * | 2017-08-18 | 2023-06-02 | 株式会社カネカ | 可逆的な多応答性および多パターン化ナノコーティング |
KR102075339B1 (ko) * | 2017-11-06 | 2020-02-10 | 한국원자력연구원 | 방사성 핵종 제거용 조성물 및 이를 이용한 방사성 핵종의 제거방법 |
CN114287947B (zh) * | 2022-01-04 | 2023-08-18 | 上海未乐科技有限公司 | 一种可用于虚拟-现实交互的界面材料及其制备方法 |
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2003
- 2003-03-18 JP JP2003073323A patent/JP4284642B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2004027195A (ja) | 2004-01-29 |
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