JP4255715B2 - トランジスタ - Google Patents
トランジスタ Download PDFInfo
- Publication number
- JP4255715B2 JP4255715B2 JP2003050406A JP2003050406A JP4255715B2 JP 4255715 B2 JP4255715 B2 JP 4255715B2 JP 2003050406 A JP2003050406 A JP 2003050406A JP 2003050406 A JP2003050406 A JP 2003050406A JP 4255715 B2 JP4255715 B2 JP 4255715B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- channel
- semiconductor
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 83
- 239000010410 layer Substances 0.000 description 77
- 108091006146 Channels Proteins 0.000 description 67
- 239000010408 film Substances 0.000 description 45
- 239000000969 carrier Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 polycrystal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003050406A JP4255715B2 (ja) | 2002-03-05 | 2003-02-27 | トランジスタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002058541 | 2002-03-05 | ||
| JP2002-58541 | 2002-03-05 | ||
| JP2003050406A JP4255715B2 (ja) | 2002-03-05 | 2003-02-27 | トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003332584A JP2003332584A (ja) | 2003-11-21 |
| JP2003332584A5 JP2003332584A5 (enExample) | 2006-04-06 |
| JP4255715B2 true JP4255715B2 (ja) | 2009-04-15 |
Family
ID=29713737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003050406A Expired - Fee Related JP4255715B2 (ja) | 2002-03-05 | 2003-02-27 | トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4255715B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4559728B2 (ja) * | 2003-12-26 | 2010-10-13 | 株式会社東芝 | 半導体記憶装置 |
| KR20110099422A (ko) * | 2010-03-02 | 2011-09-08 | 삼성전자주식회사 | 박막 트랜지스터 및 이의 제조 방법 |
| KR101108178B1 (ko) * | 2010-07-27 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 센서 및 박막 트랜지스터 제조 방법 |
| JP5854377B2 (ja) * | 2011-03-23 | 2016-02-09 | 公立大学法人首都大学東京 | Ｍｏｓトランジスタ集積回路およびｍｏｓトランジスタ劣化度合模擬算出システム |
-
2003
- 2003-02-27 JP JP2003050406A patent/JP4255715B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003332584A (ja) | 2003-11-21 |
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