JP4253709B2 - 薄膜トランジスタを備えた平板表示装置 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims description 20
- 239000013078 crystal Substances 0.000 claims description 218
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Recrystallisation Techniques (AREA)
Description
11r,11g,11b 第1活性層
20r,20g,20b 第2TFT
21r,21g,21b 第2活性層
51 ゲートライン
52 データライン
53 駆動ライン
Claims (28)
- 自己発光素子を備えた複数の副画素を含む画素と、
前記各副画素に備えられて少なくともチャンネル領域を有する半導体活性層を備え、前記自己発光素子に各々接続されて電流を供給するものであって、前記活性層の少なくともチャンネル領域が前記副画素別にその結晶粒のサイズのみにより決定される結晶粒状が相異なるように備えられた駆動薄膜トランジスタと、を含むことを特徴とする平板表示装置。 - 前記副画素は、少なくとも二つの相異なる色相を有するように備えられたことを特徴とする請求項1に記載の平板表示装置。
- 前記チャンネル領域は、前記副画素の色相別にその結晶粒状が相異なるように備えられたことを特徴とする請求項2に記載の平板表示装置。
- 前記チャンネル領域の結晶粒のサイズは、同じ駆動電圧下で前記各副画素に流れる電流値に比例するように決定されることを特徴とする請求項3に記載の平板表示装置。
- 前記チャンネル領域の結晶粒のサイズは、前記各チャンネル領域の電流移動度に比例するように決定されることを特徴とする請求項3に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、無定形の結晶粒界により決定される結晶粒状であることを特徴とする請求項1に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、同じ駆動電圧下で最少の電流が流れる副画素の少なくともチャンネル領域が無定形の結晶粒界を有するように決定されることを特徴とする請求項6に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、同じ駆動電圧下で前記無定形の結晶粒状を有する副画素より多い電流が流れる副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界がストライプ状、または四角形状に決定されることを特徴とする請求項6に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、同じ駆動電圧下で最多の電流が流れる副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界がストライプ状に決定されることを特徴とする請求項6に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、最低の電流移動度を有する副画素の少なくともチャンネル領域が無定形の結晶粒界を有するように決定されることを特徴とする請求項6に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、前記無定形の結晶粒界を有する副画素より高い電流移動度を有する副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界がストライプ状、または四角形状に決定されることを特徴とする請求項10に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、最高の電流移動度を有する副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界がストライプ状の結晶粒界を有するように決定されることを特徴とする請求項6に記載の平板表示装置。
- 前記活性層の少なくともチャンネル領域は、多結晶質シリコンで形成されたことを特徴とする請求項1に記載の平板表示装置。
- 自己発光素子を備えた赤色、緑色及び青色の副画素を含む画素と、
前記各副画素に備えられて少なくともチャンネル領域を有する半導体活性層を備え、前記自己発光素子に各々接続されて電流を供給するものであって、前記活性層の少なくともチャンネル領域が前記副画素の色相別にその結晶粒のサイズのみにより決定される結晶粒状が相異なるように備えられた駆動薄膜トランジスタと、を含むことを特徴とする平板表示装置。 - 前記各チャンネル領域の結晶粒のサイズは、前記緑色副画素を流れる電流値が最低になるように決定されることを特徴とする請求項14に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のサイズは、同じ駆動電圧下で各副画素を流れる電流値が赤色、青色及び緑色副画素の順に低くなるように決定されることを特徴とする請求項14に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のサイズは、前記緑色副画素の活性層のチャンネル領域の電流移動度が最低になるように決定されることを特徴とする請求項14に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のサイズは、前記各副画素の活性層のチャンネル領域の電流移動度が赤色、青色及び緑色副画素の順に低くなるように決定されることを特徴とする請求項14に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のサイズは、赤色、青色及び緑色副画素の順に小さくなるように決定されることを特徴とする請求項14に記載の平板表示装置。
- 前記チャンネル領域の結晶粒状は、無定形の結晶粒界により決定される結晶粒状であることを特徴とする請求項14に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒状は、前記緑色副画素を流れる電流値が最低になるように決定されることを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒状は、同じ駆動電圧下で各副画素を流れる電流値が赤色、青色及び緑色副画素の順に低くなるように決定されることを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒状は、前記緑色副画素の活性層のチャンネル領域の電流移動度が最低になるように決定されることを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒状は、前記各副画素の活性層のチャンネル領域の電流移動度が赤色、青色及び緑色副画素の順に低くなるように決定されることを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のうち赤色副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界が前記赤色副画素の活性層の長手方向に垂直に備えられたストライプ状であることを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のうち緑色副画素の少なくともチャンネル領域は無定形の結晶粒界を有することを特徴とする請求項20に記載の平板表示装置。
- 前記各チャンネル領域の結晶粒のうち青色副画素の少なくともチャンネル領域の結晶粒が平行に配列された第1結晶粒界と、前記第1結晶粒界の間に前記第1結晶粒界にほぼ垂直に延びた第2結晶粒界とを有するものであって、前記第1結晶粒界が四角形状であることを特徴とする請求項20に記載の平板表示装置。
- 前記活性層の少なくともチャンネル領域は、多結晶質シリコンで形成されたことを特徴とする請求項14に記載の平板表示装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0015855A KR100490552B1 (ko) | 2003-03-13 | 2003-03-13 | 박막 트랜지스터를 구비한 평판표시장치 |
Publications (2)
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JP2004280054A JP2004280054A (ja) | 2004-10-07 |
JP4253709B2 true JP4253709B2 (ja) | 2009-04-15 |
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JP2003363356A Expired - Fee Related JP4253709B2 (ja) | 2003-03-13 | 2003-10-23 | 薄膜トランジスタを備えた平板表示装置 |
Country Status (4)
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US (1) | US7173368B2 (ja) |
JP (1) | JP4253709B2 (ja) |
KR (1) | KR100490552B1 (ja) |
CN (1) | CN1313988C (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7781784B2 (en) * | 2007-05-07 | 2010-08-24 | Samsung Electronics Co., Ltd. | Display apparatus with color pixels |
JP5181164B2 (ja) * | 2008-03-17 | 2013-04-10 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光表示装置 |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
JP2012003925A (ja) * | 2010-06-16 | 2012-01-05 | Sony Corp | 表示装置 |
KR101795691B1 (ko) | 2010-11-11 | 2017-11-09 | 삼성디스플레이 주식회사 | 표시장치 |
KR101787598B1 (ko) | 2011-02-07 | 2017-10-19 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN104379820A (zh) * | 2012-05-14 | 2015-02-25 | 纽约市哥伦比亚大学理事会 | 薄膜的改进型准分子激光退火 |
KR102501656B1 (ko) * | 2016-05-31 | 2023-02-21 | 삼성디스플레이 주식회사 | 표시장치 |
CN108877699B (zh) * | 2017-05-08 | 2021-02-09 | 北京小米移动软件有限公司 | 一种显示面板 |
KR102461360B1 (ko) * | 2017-12-15 | 2022-11-02 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0603174B1 (en) * | 1991-09-05 | 1999-06-02 | ZIMMER, Mark Alan | System and method for digital rendering of images and printed articulation |
JP2784615B2 (ja) | 1991-10-16 | 1998-08-06 | 株式会社半導体エネルギー研究所 | 電気光学表示装置およびその駆動方法 |
JP3670923B2 (ja) | 1999-02-26 | 2005-07-13 | 三洋電機株式会社 | カラー有機el表示装置 |
JP2001109399A (ja) | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | カラー表示装置 |
KR100487426B1 (ko) * | 2001-07-11 | 2005-05-04 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법 |
KR100496300B1 (ko) * | 2003-04-02 | 2005-06-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 평판표시장치 |
-
2003
- 2003-03-13 KR KR10-2003-0015855A patent/KR100490552B1/ko active IP Right Grant
- 2003-10-23 JP JP2003363356A patent/JP4253709B2/ja not_active Expired - Fee Related
- 2003-12-03 US US10/725,599 patent/US7173368B2/en active Active
- 2003-12-31 CN CNB2003101240644A patent/CN1313988C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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US20040178410A1 (en) | 2004-09-16 |
US7173368B2 (en) | 2007-02-06 |
KR100490552B1 (ko) | 2005-05-17 |
JP2004280054A (ja) | 2004-10-07 |
CN1530895A (zh) | 2004-09-22 |
KR20040081522A (ko) | 2004-09-22 |
CN1313988C (zh) | 2007-05-02 |
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