JP4244695B2 - 電気光学装置および半導体装置 - Google Patents
電気光学装置および半導体装置 Download PDFInfo
- Publication number
- JP4244695B2 JP4244695B2 JP2003132001A JP2003132001A JP4244695B2 JP 4244695 B2 JP4244695 B2 JP 4244695B2 JP 2003132001 A JP2003132001 A JP 2003132001A JP 2003132001 A JP2003132001 A JP 2003132001A JP 4244695 B2 JP4244695 B2 JP 4244695B2
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- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- contact hole
- conductive
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000005530 etching Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000382 optic material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 77
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 230000010354 integration Effects 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003132001A JP4244695B2 (ja) | 2002-05-22 | 2003-05-09 | 電気光学装置および半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002148222 | 2002-05-22 | ||
| JP2003132001A JP4244695B2 (ja) | 2002-05-22 | 2003-05-09 | 電気光学装置および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047964A JP2004047964A (ja) | 2004-02-12 |
| JP2004047964A5 JP2004047964A5 (enExample) | 2006-06-22 |
| JP4244695B2 true JP4244695B2 (ja) | 2009-03-25 |
Family
ID=31719649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003132001A Expired - Lifetime JP4244695B2 (ja) | 2002-05-22 | 2003-05-09 | 電気光学装置および半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4244695B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6662015B2 (ja) * | 2015-12-11 | 2020-03-11 | 株式会社ニコン | 半導体装置および半導体装置の製造方法 |
-
2003
- 2003-05-09 JP JP2003132001A patent/JP4244695B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004047964A (ja) | 2004-02-12 |
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