JP4213499B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor package in which an external terminal and a semiconductor chip are electrically connected using an inner lead formed on an insulating film surface, and a short circuit between inner leads during a manufacturing process or in actual use. The present invention relates to a semiconductor device and a method for manufacturing the same, in which a short circuit between a semiconductor chip and an inner lead and an inner lead are prevented from being disconnected.
[0002]
[Prior art]
A conventional semiconductor device using a TAB (Tape Automated Bonding) technique and a manufacturing method thereof will be described with reference to FIGS.
A conventional semiconductor device 30 shown in FIG. 7A is formed on a TAB tape 2 made of a tape carrier having an inner lead 4 disposed on one side, a semiconductor chip 1, and electrodes on the surface of the semiconductor chip 1. The bumps 5, the heat radiating plate 6 also serving as a support plate adhered to the back surface of the semiconductor chip 1, and the frame disposed on the heat radiating plate 6 so as to surround the semiconductor chip 1. The reinforcing plate 7 and a ball 8 serving as an external terminal formed of a solder ball or the like, which are in electrical contact with the inner lead 4 through a through hole of the tape carrier of the TAB tape 2.
[0003]
The TAB tape 2 is formed with an opening called a device hole 14 at a position where the semiconductor chip 1 is accommodated. Only the inner lead 4 is bent and stretched from the end of the device hole, and the bump 5 is interposed therebetween. Are connected to the semiconductor chip 1.
Here, the TAB tape 2 is made by removing a portion of the insulating resin film corresponding to the device hole 14 on the tape carrier made of a stretchable insulating resin film such as Kapton or Polyimide, and then copper plated with tin or the like. The inner lead 4 made of, for example, is bonded and formed by etching, and the tip portion of the inner lead 4 is exposed.
[0004]
Next, a conventional method for manufacturing the semiconductor device 30 will be described with reference to FIG. First, the semiconductor chip 1 is disposed on the stage 10 of the bonding apparatus so that the electrode portion is on top, and the TAB tape 2 is positioned thereon, and the tip of the inner lead 4 and the bump 5 of the semiconductor chip 1 are aligned, After the placement, the heated bonding tool 9 is lowered, the tip of the inner lead 4 protruding from the device hole 14 of the TAB tape 2 is pushed, and the bump 5 on the electrode formed on the semiconductor chip 1 is brought into contact with the heat. It is manufactured by connecting by pressure bonding (see Patent Document 1).
[0005]
As another conventional semiconductor device, a conventional semiconductor device 40 shown in FIG. 8A includes a TAB tape 2 made of a tape carrier having an inner lead 4 disposed on one side, a semiconductor chip 1, and the semiconductor chip 1. A heat sink that also serves as a bump 5 formed on the electrode on the surface of the substrate, an underfill resin 3 disposed between the TAB tape 2 and the semiconductor chip 1, and a support plate adhered to the back surface of the semiconductor chip 1 6, a reinforcing plate 7 also serving as a frame disposed so as to surround the semiconductor chip 1, and the inner lead 4 through the through hole of the tape carrier of the TAB tape 2. It is constituted by a ball 8 which serve as external terminals formed in which is allowed to have, solder balls or the like.
[0006]
Here, the TAB tape 2 is manufactured by adhering and etching an inner lead 4 made of copper wire plated with tin or the like on a tape carrier made of a stretchable insulating resin film such as kapton or polyimide. .
Next, a conventional method for manufacturing the semiconductor device 40 will be described with reference to FIG. First, the TAB tape 2 is disposed on the stage 10 of the bonding apparatus so that the inner leads 4 are on top, the TAB tape 2 is fixed by the clamper 11, and the underfill resin 3 is disposed. After the semiconductor chip 1 is arranged in such a direction and the tip of the inner lead 4 and the bump 5 of the semiconductor chip 1 are aligned, the heated bonding tool 9 is lowered and the semiconductor chip 1 is pushed to The tip of 4 is brought into contact with the bump 5 on the electrode formed on the semiconductor chip 1 and connected by thermocompression bonding (see Patent Document 2).
[0007]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 6-333986
[Patent Document 2]
Japanese Patent Laid-Open No. 11-330149
[Problems to be solved by the invention]
In assembling the conventional semiconductor device 30, the tip of the inner lead is exposed from the TAB tape in order to make a device hole in the center of the TAB tape and to electrically connect the inner lead and the electrode of the semiconductor chip. It is necessary to let For this reason, the tip of the inner lead that has lost support as a tape carrier is not stable, and electrical contact between the inner leads due to deformation of the inner lead becomes a problem. In particular, when the interval between the inner leads is narrowed, the above problem becomes remarkable and there is a problem that it is difficult to deal with the narrow pitch of the inner leads.
[0010]
In the assembly of the conventional semiconductor device 40, the distance between the inner lead on the TAB tape and the semiconductor chip is only the height of the bump on the semiconductor chip, for example, about 15 to 20 μm. Electrical connection is a problem. Therefore, when the underfill resin is disposed between the inner lead and the semiconductor chip, the above problem is solved. However, when the conventional semiconductor device 40 is in a poor temperature cycle environment, the underfill resin and the inner lead There was a problem that the pulling force due to the difference in thermal expansion coefficient worked on the inner lead, leading to disconnection.
[0011]
[Means for Solving the Problems]
To solve the technical problems described above, an insulating film having a convex portion formed on Chuo,
A conductive inner lead disposed on a part of the projection-forming surface of the insulating film;
A plurality of electrodes formed on a main surface, a semiconductor element connected to the inner leads by the plurality of electrodes,
A frame disposed on the insulating film and the inner lead so as to surround the semiconductor element;
A support plate bonded to the semiconductor element and the frame via an adhesive tape across the semiconductor element and the frame;
A plurality of external electrodes connected to the inner leads via a conductive material penetrating the insulating film under the insulating film;
Between the semiconductor element and the insulating film, and semi-conductor devices that have a and disposed resin between said semiconductor element and said inner lead is provided.
[0013]
In order to solve the above technical problems,
Adhering a conductive inner lead to a part of the insulating film;
Each hole from the opposite side to the said inner leads formed surface on the insulating film, a step of bonding the electrode for external terminals with a conductive adhesive to the inner leads,
Placing the insulating film on a stage;
Arranging a semiconductor element on the inner lead;
A process of pressing the heated bonding tool against the back surface of the semiconductor element and connecting the semiconductor element by heating and pressing the inner lead; and
While the semiconductor element and the insulating film are sandwiched and fixed by the bonding tool and the stage, the insulating film and the inner lead peripheral portion are pushed down by a clamper, and the insulating film and the inner lead are bent. Bending process to perform,
Disposing a resin between the inner lead and the semiconductor element and between the insulating film and the semiconductor element;
Forming a frame on the insulating film around the semiconductor element;
Straddling the semiconductor element and the frame, and bonding a support plate to the semiconductor element and the frame;
Disposing an external terminal on the electrode for the external terminal;
A method for manufacturing a semiconductor device is provided.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
First, the semiconductor device and the manufacturing method thereof according to the first embodiment of the present invention will be described with reference to FIGS.
1A, the semiconductor device according to the first embodiment (hereinafter referred to as “semiconductor device 20”) includes a TAB tape 2 made of a tape carrier having an inner lead 4 disposed on one side, a semiconductor chip 1, The bumps 5 formed on the electrodes on the surface of the semiconductor chip 1, the underfill resin 3 disposed between the TAB tape 2 and the semiconductor chip 1, and the support plate adhered to the back surface of the semiconductor chip 1 A heat sink 6 that also serves as a frame, a reinforcing plate 7 that also serves as a frame disposed so as to surround the semiconductor chip 1 on the heat sink 6, and an inner lead 4 from a through hole of the tape carrier of the TAB tape 2. The TAB tape 2 is bonded to the upper surface of the reinforcing plate 7 with an insulating adhesive 15. The ball 8 is an external terminal formed of solder balls or the like. .
[0016]
Here, to make the TAB tape 2, first, the inner lead 4 made of copper wire plated with tin or the like is bonded onto the tape carrier made of insulating resin film having elasticity such as kapton or polyimide, Etch. Then, in the portion where the external terminal is disposed, and the inner leads 4 forming surface in the insulating resin film each hole from the opposite side, arranging the electrodes for external terminals to the inner lead 4. An external terminal, to adhere to the electrodes for the external terminals with a conductive adhesive as can the electrical connection and Lee N'narido 4.
[0017]
Next, the method for manufacturing the semiconductor device 20 according to the present embodiment will be explained with reference to FIG. First, in FIG. 3A, the TAB tape 2 is arranged on the stage 10 of the bonding apparatus so that the inner leads 4 face up, and the TAB tape 2 is fixed by the clamper 11. Next, the semiconductor chip 1 is placed on the TAB tape so that the electrode portion faces downward, the tip of the inner lead 4 and the bump 5 of the semiconductor chip 1 are aligned, and then the heated bonding tool 9 is lowered. Then, the semiconductor chip 1 is pushed, the tip of the inner lead 4 is brought into contact with the bump 5 on the electrode formed on the semiconductor chip 1, and connected by thermocompression bonding. Next, in FIG. 3B, the clamper 11 is moved downward with the semiconductor chip 1 and the TAB tape 2 sandwiched between the stage 10 and the bonding tool 9, and the inner leads in the TAB tape 2 and the TAB tape 2 are moved. 4 is curved. Further, a resin in which particles of an insulating material such as silicon oxide are contained in an epoxy resin or the like is injected between the semiconductor chip 1 and the TAB tape 2 to dispose the underfill resin 3.
[0018]
Thereafter, a rectangular frame made of stainless steel or the like is used as a reinforcing plate 7 so as to surround the semiconductor chip, and is fixed to the TAB tape 2 by thermocompression bonding or the like using an adhesive tape. The heat radiating plate 6 made of a material such as copper is fixed over the reinforcing plate 7 by thermocompression bonding using an adhesive tape. Finally, balls 8 to be external terminals formed of solder balls or the like on the inner leads are disposed on the upper surface of the reinforcing plate 7 through through holes provided in the TAB tape. In the above description, the meaning of “enclosing the semiconductor chip” includes cases of enclosing from two directions and from four directions, and FIG. 8B shows an example of enclosing from two directions.
[0019]
In the semiconductor device 20 described above, the TAB tape 2 is curved between the semiconductor chip 1 and the ball 7, but the step of the TAB tape 2 due to the bending is 0.1 mm to 0.5 mm. (See FIG. 5).
Therefore, since the upper limit of the degree of curvature of the TAB tape 2 is 0.5 mm, there is an effect that the height from the ball 8 that is an external terminal to the heat radiating plate 6 that also serves as a support plate can be suppressed low. On the other hand, if the degree of curvature is 0.1 mm or less, the semiconductor chip 1 and the inner lead 4 may be electrically short-circuited. As described above, by setting the curvature of the TAB tape 2 to 0.1 mm to 0.5 mm, it is possible to prevent the semiconductor chip 1 and the inner lead 4 from being short-circuited.
[0020]
In addition, since the above-described assembly can be performed with the tip portion of the inner lead 4 bonded to the semiconductor chip being fixed by the TAB tape 2, the inner lead 4 is not unstable and the deformation is suppressed, so Can be prevented.
During the above assembly, the time when the TAB tape 2 and the inner lead 4 are bent by the movement of the clamper 11 is after the semiconductor chip 1 and the TAB tape 2 are connected. However, immediately after the TAB tape 2 is fixed by the clamper 11, the TAB tape 2 and the inner lead 4 are bent by the movement of the clamper 11, and then the semiconductor chip 1 and the TAB tape 2 are connected to each other. Has the same effect as
[0021]
Next, a semiconductor device and a manufacturing method thereof according to the second embodiment of the present invention will be described with reference to FIGS. 2A, the semiconductor device according to the present embodiment (hereinafter referred to as “semiconductor device 21”) includes a TAB tape 2 made of a tape carrier having an inner lead 4 disposed on one side, a semiconductor chip 1, A bump 5 formed on the electrode on the surface of the semiconductor chip 1, an underfill resin 3 disposed between the TAB tape 2 and the semiconductor chip 1, and a recess deeper than the thickness of the semiconductor chip 1, It is formed of a support plate 12 disposed on the back surface of the semiconductor chip 1 and a solder ball or the like that is in electrical contact with the inner lead 4 from the through hole of the tape carrier of the TAB tape 2 so that the semiconductor chip 1 is accommodated in the recess. The TAB tape 2 is bonded to the upper surface of the reinforcing plate 7 with an insulating adhesive 15.
[0022]
Here, to make the TAB tape 2, first, the inner lead 4 made of copper wire plated with tin or the like is bonded onto the tape carrier made of insulating resin film having elasticity such as kapton or polyimide, Etch. Then, in the portion where the external terminal is disposed, and the inner leads 4 forming surface in the insulating resin film each hole from the opposite side, arranging the electrodes for external terminals to the inner lead 4. An external terminal, to adhere to the electrodes for the external terminals with a conductive adhesive as can the electrical connection and Lee N'narido 4.
[0023]
Next, the method for manufacturing the semiconductor device 21 according to the present embodiment will be explained with reference to FIGS.
First, in FIG. 4A, the TAB tape 2 is disposed on the stage 10 of the bonding apparatus, the underfill resin 3 is disposed on the TAB tape 2, and is pressed by the clamper 11.
Next, in FIG. 4B, the stage 10 is moved upward, and the TAB tape 2 and the inner lead 4 are curved.
Next, the semiconductor chip 1 is attracted to the heated bonding tool 9 in FIG. 4C, and the tip of the inner lead 4 on the TAB tape 2 and the bump 5 formed on the electrode on the semiconductor chip 1 are aligned. Then, the bonding tool 9 is lowered, and the inner leads 4 and the electrodes of the semiconductor chip 1 are heated and pressed to be electrically connected. Next, the support plate 12 such as copper is fixed to the semiconductor chip 1 by thermocompression bonding or the like using an adhesive tape.
[0024]
Finally, balls 8 serving as external terminals formed of solder balls or the like on the inner leads 4 are disposed on the upper surface portion of the support plate 12 through through holes provided in the TAB tape 2.
In the semiconductor device 21 according to the present embodiment, the tape carrier and the inner lead 4 constituting the TAB tape 2 are curved, so that the gap between the semiconductor chip 1 and the inner lead is an edge portion of the semiconductor chip 1. The distance is about 0.1 mm to 0.5 mm. Accordingly, the possibility of an electrical short between the edge of the semiconductor chip 1 and the inner lead 4 is greatly reduced. In addition, since the above-described assembly can be performed with the tip portion of the inner lead 4 joined to the semiconductor chip 1 being fixed by the TAB tape, the inner lead 4 is not unstable and can be prevented from being deformed. Can be prevented.
[0025]
In the above assembly process, the bending of the TAB tape 2 and the inner lead 4 by the movement of the stage 10 was performed before the connection between the semiconductor chip 1 and the TAB tape 2. However, after the semiconductor chip 1 and the TAB tape 2 are connected, the TAB tape 2 and the inner lead 4 can be curved by moving the stage 10, and the same effects as described above can be obtained.
[0026]
Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. The semiconductor device according to the present embodiment (hereinafter referred to as “semiconductor device 22”) includes a TAB tape 2 made of a tape carrier having an inner lead 4 disposed on one side, a semiconductor chip 1, and a surface of the semiconductor chip 1. A bump 5 formed on the electrode; an underfill resin 3 disposed between the TAB tape 2 and the semiconductor chip 1; a sealing resin 13 that integrally seals the semiconductor chip 1 and the TAB tape; The TAB tape 2 is composed of a ball 8 serving as an external terminal formed of a solder ball or the like, which is in electrical contact with the inner lead from the through hole of the tape carrier of the TAB tape 2.
[0027]
Here, the TAB tape 2 is manufactured in the same manner as in the first and second embodiments.
Similarly to the semiconductor device 20, the TAB tape 2 is curved between the semiconductor chip 1 and the reinforcing plate 7. The step of the TAB tape 2 due to the bending is 0.1 mm to 0. .5 mm.
[0028]
The semiconductor device 22 according to the present embodiment is obtained by replacing the heat dissipation plate and the reinforcing plate of the semiconductor device 20 with the sealing resin 13, and has the same effect as the semiconductor device 20. Further, since the sealing resin 13 is lighter than the metal constituting the heat radiating plate and the reinforcing plate, the semiconductor device 22 has an effect of being lighter than the semiconductor device 20.
[0029]
【The invention's effect】
According to the present invention, the TAB tape and the inner lead are integrated, and by bending both the TAB tape and the inner lead, an electrical short due to the deformation of the tip of the inner lead can be prevented, and the semiconductor Since a predetermined distance can be taken between the chip edge and the inner lead, an electrical short circuit between the semiconductor chip and the inner lead can be prevented. Further, stress due to expansion / contraction of the inner lead can be alleviated, and disconnection of the inner lead can be prevented.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view and a bottom view of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view and a bottom view of a semiconductor device according to a second embodiment of the present invention. Semiconductor Device Manufacturing Method According to Embodiment FIG. 4 Semiconductor Device Manufacturing Method According to Second Embodiment of the Invention FIG. 5 is a sectional view of the semiconductor device according to the first embodiment of the present invention (part 2).
6 is a sectional view of a semiconductor device according to a third embodiment of the present invention. FIG. 7 is a sectional view of a conventional semiconductor device and a bonding apparatus. FIG. 8 is a sectional view of a conventional semiconductor device and a bonding apparatus.
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 TAB tape 3 Underfill resin 4 Inner lead 5 Bump 6 Heat sink 7 Reinforcing plate 8 Reinforcement plate 8 Ball 9 Bonding tool 10 Stage 11 Clamper 12 Support plate 13 Sealing resin 14 Device hole 15 Adhesive 20 Semiconductor device 21 Semiconductor device 22 Semiconductor device

Claims (5)

An insulating film having a convex portion in the center;
A conductive inner lead disposed on a part of the projection-forming surface of the insulating film;
A plurality of electrodes formed on a main surface, and a semiconductor element connected to the inner leads by the plurality of electrodes;
A frame disposed on the insulating film and the inner lead so as to surround the semiconductor element;
A support plate bonded to the semiconductor element and the frame via an adhesive tape across the semiconductor element and the frame;
A plurality of external electrodes connected to the inner leads via a conductive material penetrating the insulating film under the insulating film;
A semiconductor device comprising: a resin disposed between the semiconductor element and the insulating film; and between the semiconductor element and the inner lead. An insulating film having a convex portion in the center;
A conductive inner lead disposed on a part of the projection-forming surface of the insulating film;
A plurality of electrodes formed on the main surface, and a semiconductor element connected to the inner leads by the plurality of electrodes;
A recess formed in the center, and a sealing resin disposed on the insulating film and the inner lead so as to surround the semiconductor element;
A plurality of external electrodes connected to the inner leads via a conductive material penetrating the insulating film under the insulating film;
A semiconductor device comprising: a resin disposed between the semiconductor element and the insulating film; and between the semiconductor element and the inner lead.   The semiconductor device according to claim 1, wherein a height of the convex portion is 0.1 to 0.5 mm. Adhering a conductive inner lead to a part of the insulating film;
Each hole from the opposite side to the said inner leads formed surface on the insulating film, a step of bonding the electrode for external terminals with a conductive adhesive to the inner leads,
Placing the insulating film on a stage;
Arranging a semiconductor element on the inner lead;
Pressing the heated bonding tool against the back surface of the semiconductor element, and connecting the semiconductor element by heating and pressing the inner lead; and
While the semiconductor element and the insulating film are sandwiched and fixed by the bonding tool and the stage, the peripheral portion of the insulating film and the inner lead are pushed down by a clamper, and the insulating film and the inner lead are bent. Bending process to perform,
Disposing a resin between the inner lead and the semiconductor element and between the insulating film and the semiconductor element;
Forming a frame on the insulating film around the semiconductor element;
Straddling the semiconductor element and the frame, and bonding a support plate to the semiconductor element and the frame;
Disposing an external terminal on the electrode for the external terminal;
A method for manufacturing a semiconductor device, comprising: Adhering a conductive inner lead to a part of the insulating film;
Each hole from the opposite side to the said inner leads formed surface on the insulating film, a step of bonding the electrode for external terminals with a conductive adhesive to the inner leads,
Placing the insulating film on a stage;
Disposing a resin on a part of the inner lead and the insulating film;
While the insulating film and the inner lead peripheral part are fixed from above by a clamper, the stage is pushed up, and a bending process step of bending the insulating film and the inner lead is performed;
Arranging a semiconductor element on the inner lead;
A process of pressing the heated bonding tool against the back surface of the semiconductor element and connecting the semiconductor element by heating and pressing the inner lead; and
Forming a frame on the insulating film around the semiconductor element;
Straddling the semiconductor element and the frame, and bonding a support plate to the semiconductor element and the frame;
Disposing an external terminal on the electrode for the external terminal;
A method for manufacturing a semiconductor device, comprising:

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