JP2000216280A - Terminal land frame and manufacture thereof, and resin sealed semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which uses a frame type package material, wherein a semiconductor device which allows substrate mounting by its bottom surface side comprises a frame body. SOLUTION: A terminal land frame, comprising a plurality of land structures 12 so formed as to protrude above a frame main body 10, is connected to the frame main body 10 with a thin part 11, with a slot part 13 provided on the upper surface of the land structure body 12, while a protruding part 14 n the lower surface. In the land structure body 12, the thin part 11 is broken and separated under the pressurizing force in the protruding direction from the frame main body 10. Thus, the reliability in resin sealing is provided at configuration of a semiconductor device, efficiently providing a small resin-sealed type semiconductor device where land electrodes are arrayed on the bottom surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a terminal land frame which is a frame having a land body serving as an external terminal in place of a conventional lead frame having a beam-shaped lead, and a method of manufacturing the same. The present invention relates to a resin-encapsulated semiconductor device in which a semiconductor element is mounted using, and an outer periphery is sealed with resin, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices has been required.
Thinning is progressing. In addition, the number of pins has been increased while being small and thin, and a high-density small and thin resin-sealed semiconductor device has been demanded.

Hereinafter, a lead frame used in a conventional resin-encapsulated semiconductor device will be described.

FIG. 18 is a plan view showing the structure of a conventional lead frame. As shown in FIG. 18, a conventional lead frame includes a frame 1 and a frame 1 inside the frame.
A rectangular die pad portion 2 on which a semiconductor element is mounted, a suspension lead portion 3 supporting the die pad portion 2, and when a semiconductor element is mounted, the semiconductor element is electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire. Beam-shaped inner lead portion 4 for electrical connection, and an outer lead portion 5 provided continuously with the inner lead portion 4 for connection to an external terminal.
And a tie bar portion 6 which connects and fixes the outer lead portions 5 to each other and serves as a resin stopper at the time of resin sealing.

[0005] The lead frame has a plurality of patterns each having the structure shown in FIG.
They are arranged vertically continuously.

Next, a conventional resin-encapsulated semiconductor device will be described. FIG. 19 is a sectional view showing a resin-sealed semiconductor device using the lead frame shown in FIG.

As shown in FIG. 19, a semiconductor element 7 is mounted on a die pad section 2 of a lead frame, and the semiconductor element 7 and the inner lead section 4 are electrically connected by a thin metal wire 8. The outer periphery of the semiconductor element 7 and the inner lead portion 4 on the die pad portion 2 is sealed with a sealing resin 9. An outer lead portion 5 is provided so as to protrude from a side surface of the sealing resin 9, and a front end portion is bent.

In a conventional method of manufacturing a resin-encapsulated semiconductor device, as shown in FIG. 20, after a semiconductor element 7 is bonded onto a die pad portion 2 of a lead frame by an adhesive (die bonding step), the semiconductor element 7 is The distal end portion of the inner lead portion 4 is connected with the thin metal wire 8 (wire bonding step). After that, the outer periphery of the semiconductor element 7 is sealed, and the sealing region is sealed with the sealing resin 9 in the region surrounded by the tie bar portion 6 of the lead frame, and the outer lead portion 5 is projected outside. Sealing (resin sealing step). Then, the boundary portion of the sealing resin 9 is cut with the tie bar portion 6, each outer lead portion 5 is separated, the frame 1 is removed, and the tip of the outer lead portion 5 is bent (tie bar cut / bend). Step), FIG.
Can be manufactured. Here, in FIG. 20, a region indicated by a broken line is a region to be sealed with the sealing resin 9.

[0009]

However, in the conventional lead frame, when the semiconductor element is highly integrated and has many pins, there is a limit in forming the width of the inner lead portion (outer lead portion). In order to cope with this problem, the number of inner lead portions (outer lead portions) increases, so that the lead frame itself becomes large, and as a result, the resin-encapsulated semiconductor device also becomes large. There is a problem that a sealed semiconductor device cannot be realized. Also, in order to increase the number of inner leads without changing the size of the lead frame in response to the increase in the number of pins of the semiconductor element, the width of each inner lead must be reduced, and etching for forming the lead frame must be performed. In such processing, there are many problems.

Recently, as a surface mount type semiconductor device, a semiconductor element is mounted on a carrier (wiring board) having an external electrode provided on a bottom surface, and after electrical connection is made, the upper surface of the carrier is sealed with a resin. Semiconductor devices such as ball grid array (BGA) type and land grid
There is an array (LGA) type semiconductor device. This type of semiconductor device is a semiconductor device mounted on a motherboard on the bottom side, and such a surface mount type semiconductor device is becoming mainstream in the future. Therefore, in order to cope with such a trend, a big problem that a conventional lead frame and a resin-sealed semiconductor device using the lead frame cannot be dealt with has become apparent.

In a conventional resin-encapsulated semiconductor device, an external lead formed of an outer lead portion is provided on a side surface of a sealing resin, and the external lead and a substrate electrode are bonded and mounted. The reliability of board mounting is lower than that of BGA type and LGA type semiconductor devices. In addition, since BGA type and LGA type semiconductor devices use a wiring board, there is a problem that the cost is high.

The present invention provides a resin-encapsulated semiconductor device using a frame-type package material which can cope with the above-mentioned conventional problems and future trends in semiconductor devices. Using a frame body. In addition, the terminal land frame and its manufacturing method, which focus on the point of forming a frame-shaped external land as a land instead of a beam-shaped lead, instead of a conventional lead frame, It is intended to provide various kinds of highly reliable resin-encapsulated semiconductor devices using the same and a method for manufacturing the same. Furthermore, the present invention eliminates the lead cutting step and the lead bending step as in the related art, can easily obtain a resin-encapsulated semiconductor device, and can manufacture a resin-encapsulated semiconductor device at low cost. Can be provided.

[0013]

In order to solve the above-mentioned conventional problems, a terminal land frame according to the present invention is provided with a frame main body made of a metal plate, and is disposed in an area of the frame main body, and has a thin portion. Connect with the frame body,
A terminal comprising a plurality of land members formed so as to protrude from the frame main body, and a semiconductor element mounting support connected to the frame main body through a thin portion and protruding from the frame main body. A land frame, wherein each of the land structures has a groove at an upper portion thereof and a terminal land frame having a projecting portion at a bottom portion.

The support for mounting the semiconductor element, which is connected to the frame main body by the thin portion and protrudes from the frame main body, is a terminal land frame which is a land structure. The support for mounting the semiconductor element, which is connected to the frame main body by the thin portion and protrudes from the frame main body, is a terminal land frame which is a die pad portion.

Further, the method for manufacturing a terminal land frame according to the present invention comprises the steps of:
A first step of forming an etching resist film on each of an upper surface and a lower surface, a second step of forming an opening in a portion of the etching resist film where a groove is to be formed in the metal plate, and etching the metal plate Then, a third step of processing the metal plate portion exposed from the opening to form a groove, and pressing a predetermined position where the groove of the metal plate is formed with a mold to form a half-cut state. This is a method for manufacturing a terminal land frame, comprising a fourth step of projecting and forming a land structure.

The resin-encapsulated semiconductor device of the present invention is provided in a frame main body made of a metal plate, and is disposed in a region of the frame main body, and is connected to the frame main body by a thin portion.
And a resin-encapsulated semiconductor device formed using a terminal land frame including a plurality of land structures formed so as to protrude from the frame main body, the semiconductor device being mounted on a first land structure group. A semiconductor element, a second land group disposed around the semiconductor element and electrically connected to the semiconductor element by a thin metal wire, and a bottom surface of each land group protruding from the semiconductor element. Is a resin-sealed semiconductor device comprising a sealing resin that seals the outer periphery of each of the land structures, and a bottom surface of each of the land constituent groups has a protruding portion.

Also, a frame main body made of a metal plate and a plurality of lands arranged in a region of the frame main body, connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body. A resin-encapsulated semiconductor device formed by using a terminal land frame made of a body, comprising: a semiconductor element mounted on a first land structure group; and a semiconductor element disposed around the semiconductor element; A second element electrically connected to the element by a thin metal wire
And a sealing resin that seals the outer periphery of the semiconductor element by protruding a bottom surface of each of the land constituent groups, and an upper surface portion of each of the land constituent groups has a groove. Resin-sealed semiconductor device.

The area of the top surface of the land structure sealed on the sealing resin is larger than the area of the bottom surface of the land structure exposed from the sealing resin, and The edge portion on the upper surface of the land structure is a resin-sealed semiconductor device having a curved surface.

Further, a frame main body made of a metal plate and a semiconductor element formed in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body are mounted. A die pad portion, and a plurality of land structures disposed in the region of the frame main body and around the die pad portion, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A resin-encapsulated semiconductor device formed using a terminal land frame comprising: a semiconductor element mounted on the die pad portion; and a semiconductor element disposed on the periphery of the semiconductor element; An electrically connected land structure group, and the semiconductor element formed by projecting a bottom surface of the land structure group and a bottom surface of a die pad portion. More become sealing resin and the outer circumference is sealed, the bottom portion of said each land structure group and the die pad portion is to have a resin-sealed semiconductor device has a protrusion.

Further, a frame main body made of a metal plate and a semiconductor element formed in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body are mounted. A die pad portion, and a plurality of land structures disposed in the region of the frame main body and around the die pad portion, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A resin-encapsulated semiconductor device formed using a terminal land frame comprising: a semiconductor element mounted on the die pad portion; and a semiconductor element disposed on the periphery of the semiconductor element; An electrically connected land structure group, and the semiconductor element formed by projecting a bottom surface of the land structure group and a bottom surface of a die pad portion. More become sealing resin and the outer circumference seal, said upper surface portion of each land structure group and the die pad portion is to have a resin-sealed semiconductor device having a groove.

The area of the upper surface of the land structure on the side sealed with the sealing resin is larger than the area of the bottom surface of the land structure on the side exposed from the sealing resin. The edge portion of the upper surface of the land structure has a curved surface,
The area of the upper surface of the die pad portion on the side sealed with the sealing resin is larger than the area of the bottom surface of the die pad portion on the side exposed from the sealing resin, and the edge of the upper surface of the die pad portion on the sealed side The portion is a resin-sealed semiconductor device having a curved surface.

According to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, there is provided a frame main body made of a metal plate, disposed in a region of the frame main body, connected to the frame main body by a thin portion, and The land structure group includes a plurality of land structure groups formed so as to protrude from the main body, and the land structure group is broken by a pressing force in a direction protruding from the frame body, so that the thin portion is broken and the land structure group is formed. Preparing a terminal land frame having a configuration separated from the frame main body; mounting a semiconductor element on a protruding side of a part of the land structures of the land structure group of the terminal land frame; Electrically connecting the semiconductor element and the land structure to each other with a thin metal wire; Encapsulating only the upper surface of the terminal land with a sealing resin to form a resin-encapsulated semiconductor device; cutting the sealing resin on the upper surface of the terminal land frame; In a state where the frame body is fixed, a pressing force is applied from the bottom side of the frame body to the bottom side of the land structure to break a thin portion connecting the land structure group and the frame body, This is a method for manufacturing a resin-sealed semiconductor device in which a resin-sealed semiconductor device is separated from a frame body and aligned.

Further, a frame main body made of a metal plate and a semiconductor element formed in the region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body are mounted. A die pad portion, and a plurality of land structures disposed in the region of the frame main body and around the die pad portion, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. Wherein the die pad portion and the land structure are configured such that the thin portion is broken by a pressing force in a direction protruding from the frame body, and the land structure is separated from the frame body. A step of preparing a land frame; and a step of preparing a semiconductor element on a side of the terminal land frame where the die pad portion protrudes. Mounting, electrically connecting the mounted semiconductor element and the land structure with a thin metal wire, and sealing only the upper surface side of the terminal land frame around the semiconductor element with a sealing resin. Stopping, cutting the sealing resin on the upper surface side of the terminal land frame, and fixing the frame main body of the terminal land frame to the bottom side of the land structure from the bottom side of the frame main body. A pressing force is applied to the bottom surface side of the die pad portion to break the land structure group and the thin portion connecting the die pad portion and the frame main body, and separate the resin-sealed semiconductor device from the frame main body. This is a method for manufacturing a resin-encapsulated semiconductor device which is aligned by being aligned.

As described above, the terminal land frame of the present invention is provided with a land structure serving as an external electrode when a resin-sealed semiconductor device is formed, and the land structure is unidirectional. Pressing force, for example, by pushing up force, by breaking the thin portion which is the portion connecting the land structure and the frame main body, it is possible to separate from the frame main body, so that the lead cutting process and the lead bend process Thus, a resin-sealed semiconductor device can be easily obtained. This is a relatively simple process, in which the process itself separates the resin-encapsulated semiconductor device from the frame by a push-up process, compared to the lead cutting process and the lead bending process in a conventional lead frame that required relatively high accuracy. Processing, failure, destruction,
Since deformation and the like do not occur, a resin-sealed semiconductor device can be easily obtained.

In the land structure, or the land structure and the die pad portion, the protruding upper surface is coined to form a mushroom shape. Therefore, the semiconductor element is mounted on the terminal land frame of the present invention.
When sealed with resin, make the sealing resin bite well,
The adhesiveness of the sealing resin can be improved.

Further, due to the close contact of the resin with the land structure or the groove on the upper surface of the land structure and the die pad portion, the mechanical and thermal reliability of the mounting connection is improved, and the stress applied to the fine metal wire is reduced. In addition, the solder fillet can be appropriately formed at the time of mounting by the projecting portion on the bottom surface, and connection reliability is improved. Further, by arranging the reinforcing land structure, the stress applied to the land structure or the land structure and the die pad portion can be reduced, and the mounting reliability can be remarkably improved.

In the method for manufacturing a terminal land frame, a land structure or a land structure and a die pad portion are formed by etching, a groove portion is formed on an upper surface, or a protruding portion is formed on a lower surface. When a part of a metal plate is punched by a mold into a land structure, or a land structure and a die pad portion, a half-cut state is formed by stopping the pressing of the punch member halfway without completely punching out, The pressed portion of the metal plate can be left connected to the main body of the metal plate without being separated.

The contact area of the punch member that contacts the portion of the metal plate forming the land structure is smaller than the opening area of the opening provided in the die portion. In the step of forming the land structure protruding from the metal plate, or the land structure and the die pad portion, the area of the top surface portion of the land structure protruding from the metal plate is reduced by the bottom surface portion of the land structure connected to the metal plate side. Is larger than the area of the land structure, and the edge portion of the upper surface on the protruding side of the land structure forms a land structure having a curved surface formed by cutting out.

According to this structure, the formed land structure is easily separated by a pressing force in a direction in which the land structure protrudes, that is, a pressing force from the bottom side of the land structure. In addition, it does not separate according to the direction in which it protrudes, that is, the pressing force from the upper surface of the land structure, and has a structure that separates only into the pressing force from one direction.

Therefore, in the resin-encapsulated semiconductor device of the present invention, the land members are arranged on the bottom surface thereof, and the land members are provided so as to protrude from the bottom surface of the sealing resin. Is what is being done. Here, the amount of protrusion of the land member of the resin-encapsulated semiconductor device is equal to the amount obtained by subtracting the amount of protrusion of the land member from the thickness of the frame body and the dimension of the protrusion. A standoff as a land electrode is formed in a self-aligned manner by using a terminal land frame without forming a standoff in a separate process. In addition, by increasing the stand-off height of the semiconductor element mounting land, a gap with the mounting substrate can be secured, and mounting reliability is improved.

Further, in the method of manufacturing a resin-sealed semiconductor device of the present invention by using the terminal land frame of the present invention, the semiconductor element is mounted, and the metal plate is cut after the resin is sealed at once. Without cutting only the sealing resin part at a predetermined position and separating the resin sealing type semiconductor device individually, the land itself, the frame itself is removed by pushing up from below the die pad portion, and the bottom surface is removed. A resin-encapsulated semiconductor device in which land electrodes electrically connected to a semiconductor element are arranged in a portion can be obtained.

Further, when manufacturing a resin-encapsulated semiconductor device using the terminal land frame of the present invention, it is possible to prevent resin burrs from entering the land bottom portion during resin encapsulation. Standoff as an external electrode can be secured.

[0033]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a terminal land frame and a method of manufacturing the same, a resin-sealed semiconductor device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

First, a terminal land frame used in the resin-encapsulated semiconductor device and the method of manufacturing the same according to the present embodiment will be described with reference to the drawings.

FIG. 1 is a plan view showing a terminal land frame according to the present embodiment. FIG. 2 is a sectional view showing the terminal land frame of the present embodiment.
The sectional view of AA1 part is shown. FIG. 3 is a diagram showing a land structure of the terminal land frame shown in FIG. 1, and FIG. 3 (a) is a plan view showing the land structure.
FIG. 3B is a cross-sectional view of the land structure at aa1 point in FIG. 3A, and FIG. 3C is a bottom view showing the land structure.

As shown in FIGS. 1 to 3, the terminal land frame of the present embodiment comprises a frame main body 10 made of a metal plate used for a normal lead frame such as a copper material or a 42-alloy, and the frame main body. 10 are arranged in a grid in the area of
0 and a plurality of land components 12 formed to protrude from the frame body 10.
That is, the frame body 10, the land structure 12, and the thin portion 11 are integrally formed from the same metal plate. In the present embodiment, the groove 13 is formed on the upper surface of the land structure 12, and the protrusion 14 is formed by etching or pressing.

The land structure 12 has a structure in which the thin portion 11 is broken by a pressing force in a direction protruding from the frame body 10 and the land structure 12 is separated from the frame body 10. In addition, the grid-like arrangement of the land structures 12 is a staggered grid, a grid pattern of a grid,
Alternatively, the surface may be randomly arranged, but an arrangement suitable for connection with a semiconductor element to be mounted by a thin metal wire is employed.

In the terminal land frame of the present embodiment, by applying a pressing force in a protruding direction to the bottom surface portion 12a of the land structure 12, the thin portion 11
Of the frame body 10
Is separated from the land structure 12. here,
The thin portion 11 is a “joining portion” formed by half-cutting means of the punching process on the frame body 10 itself, and a portion of the frame body 10 where a land structure is desired to be formed is punched using a punch member. Without completely punching out, it is stopped by halfway, preferably by half the punching, the part punched out halfway protrudes from the frame main body 10, and the protruding part constitutes the land component 12 and is cut off from the frame main body 10. The connecting portions that are connected together constitute the thin portion 11. Therefore, the thin portion 11 is extremely thin, and has such a thickness that the thin portion 11 is broken only when a pressing force in a protruding direction is applied to the bottom surface portion 12a of the land structure 12.

Further, the projecting amount of the land component 12 formed so as to project from the frame body 10 has a projecting amount that is more than a half of the thickness of the frame body 10 itself,
The configuration is such that the thin portion 11 is broken by the pressing force in the direction in which the land component 12 protrudes from the frame main body 10, and the land component 12 is separated from the frame main body 10. For example, in the present embodiment, the thickness of the terminal land frame itself, that is, the thickness of the frame body 10 is set to 200 [μm], and the land structure 12
Is set to 140 [μm] to 180 [μm] (70 [%] to 90 [%] of the thickness of the frame body 10). The thickness of the frame body is not limited to 200 [μm], but may be a 400 [μm] thick frame as needed. In addition, the land structure 12
In the embodiment, the protrusion amount is set to 70% to 90% of the frame body thickness of the majority or more, but may be set to the protrusion amount of the half or less, and the range in which the thin portion 11 is broken. The projection amount can be set.

The surface of the terminal land frame of the present embodiment is plated. If necessary, for example, nickel (Ni), palladium (Pd)
And a metal such as gold (Au) is laminated and appropriately plated. For plating, the groove 13
Alternatively, it may be performed after the etching process of the protruding portion 14 or after the land structure 12 is formed.

In the terminal land frame of the present embodiment, the protruding upper surface of the land structure 12 is formed into a mushroom shape having a flat upper surface by press molding called coining. is there. Due to the shape of the coining and the action of the upper groove 13, when the semiconductor element is mounted on the terminal land frame and sealed with a resin, the sealing resin can be better engaged with the land structure, and the sealing resin and the sealing resin can be removed. And the reliability of resin sealing can be obtained even with single-sided sealing.

In the terminal land frame of this embodiment, the die pad portion, which is a member on which the semiconductor element is mounted, is not provided, but one of the groups of the land structures 12 provided in the region of the frame body 10 is provided. The land structure of the portion can be used as a mounting portion of the semiconductor element, and can be used as a land structure for supporting the semiconductor element.

The number of land structures 12 can be appropriately set according to the number of pins of a semiconductor element to be mounted. Then, as shown in FIG. 1, the land structure 12 is formed in the region of the frame main body 10, but can be formed continuously in the left, right, up and down directions. In addition, although the shape of the land structure 12 is square, it may be circular or rectangular, and the size may be all the same in the terminal land frame, or may constitute a resin-encapsulated semiconductor device and serve as a land electrode. In this case, the land structure 12 located in the peripheral portion may be enlarged in order to relieve stress at the time of mounting the substrate. In the present embodiment, the land structure 1
The size of the top surface of the semiconductor device 2 is 100 [μm suitable for mounting connection reliability as long as the semiconductor device is mounted and connected by a thin metal wire such as a gold wire as an electrical connection means. ] Is larger than φ.

Further, the terminal land frame shown in the present embodiment does not have the inner lead portion, the outer lead portion, the die pad portion and the like as in the prior art, has the land structure 12 as the land electrode, and has the land structure. By arranging the bodies 12 in a lattice or staggered pattern on the surface on which the semiconductor elements are mounted, a resin-encapsulated semiconductor device is formed using this terminal land frame. It is possible to realize a fixed semiconductor device. Further, since the configuration serving as the electrode is not the beam-shaped lead configuration but the land configuration 12 as in the related art, they can be arranged in a plane, and the degree of freedom in the arrangement of the land configuration 12 is improved. It is possible to cope with the increase in the number of pins. Of course, the arrangement of the land structures 12 is set according to the number of pins of the semiconductor element to be mounted, and may be a series of arrangements as in the related art.

Further, the terminal land frame of the present embodiment can mount electronic components in general, such as a capacitor, in addition to mounting a semiconductor element, and the application field is not limited to the semiconductor field.

Next, a method for manufacturing the terminal land frame according to the present embodiment will be described.

FIG. 4 is a cross-sectional view showing a method of manufacturing a terminal land frame, showing an etching step. FIG. 5 is a cross-sectional view illustrating a method for manufacturing a terminal land frame, and is a view illustrating a pressing step. FIGS. 4 and 5 are cross-sectional views showing a cross-section of a land structure portion for each process.

First, as shown in FIG. 4A, as a first step, a metal plate 15 made of a copper material or the like constituting a frame is formed.
In contrast, etching resist films 16 and 17 are formed on the upper and lower surfaces, respectively.

Next, as shown in FIG.
With respect to the etching resist film 16 formed on the upper surface of
The opening 18 is formed by removing at least the etching resist film other than the portion where the protrusion is to be formed. This is to form a so-called non-etched region mask. The opening 19 is formed by removing at least a portion of the etching resist film 17 on the lower surface of the metal plate 15 where the groove is to be formed. This is to open a window in an area to be etched.

Next, as shown in FIG.
Then, the metal plate portion exposed from the openings 18 and 19 is processed to form the groove 13 and the protrusion 14.

Then, as shown in FIG.
By removing the etching resist film on the upper surface and the lower surface of 5, a frame structure 20 having a groove 13 and a protrusion 14 in the metal plate 15 is formed.

Next, a method of pressing the formed frame structure 20 to complete the terminal land frame will be described.

As shown in FIG. 5A, the frame member 20 having the grooves 13 and the protrusions 14 is placed on a die 21 of a punching die, and the pressing die is positioned from above the frame member 20. Hold down with 22. Here, the die 21
An opening 23 is provided. Also, in the presser die 22,
Punch member 24 for pressing against frame structure 20
Is provided at a portion of the leading end portion thereof that is in contact with the frame member 20. The concave portion 25 absorbs the amount of protrusion of the projecting portion 14 of the frame member 20, and the projecting portion 14 is subjected to relief processing. I have. That is, when the frame member 20 is pressed by the punch member 24 and punched,
The pressed part of the frame structure 20 has a structure in which the opening 23 is punched.

Next, as shown in FIG.
A punching process is performed on the frame structure 20 fixed at a predetermined position on the upper side by a punch member 24 from above, so that the region of the groove 13 and the protrusion 14 of the frame structure 20 is By pressing so as to protrude toward the opening 23 side, a predetermined portion of the frame structure 20 is cut into a half-cut state, and the land structure 12 is formed. In other words, the land portion 12 is formed by connecting the thin portion 11 to the metal plate serving as the frame member 20 and remaining and protruding from the main body of the metal plate.

In the present embodiment, when a part of the frame structure 20 is punched by the punch member 24, the punch is not completely punched out, and the pressing of the punch member 24 is stopped halfway to form a half-cut state. Without separating the pressed portion of the frame structure 20, the frame structure 20
Are left connected to the main body of the metal plate constituting the above. Further, the contact area of the punch member 24 that contacts a portion of the frame component 20 that forms the land component 12 is:
In the step of forming a land component 12 protruding from the frame component 20 by pressing a part of the frame component 20 by the punch member 24, the area being smaller than the opening area of the opening portion 23 provided in the die portion 21. Is that the area of the upper surface portion on the side of the land structure 12 protruding from the frame structure 20 is larger than the area of the bottom surface portion, and the edge of the upper surface on the side of the land structure 12 protruding is a curved surface formed by cutting out. To form a land structure 12 having With this structure, the formed land structure 12
Are easily separated by the pressing force in the direction in which they protrude, that is, the pressing force from the bottom surface side of the land structure 12, and in the direction in which they protrude, that is, the land structure 12 Is not separated by the pressing force from the upper surface portion, which is the protruding side, and is structured to be separated only by the pressing force from one direction.

The protruding upper surface of the land structure 12 may be subjected to press molding called coining so that the protruding upper surface has a mushroom shape with a flat upper surface. By this coining shape, when the semiconductor element is mounted on the terminal land frame and sealed with resin, the sealing resin bites into the land structure well, an anchor effect is obtained, and The adhesiveness can be further improved, and the reliability of resin sealing can be obtained even with single-sided sealing.

In the present embodiment, when the frame structure 20 formed by etching a metal plate is punched and the land structure 12 is formed, the amount of protrusion is determined by configuring the frame structure 20. And more than half of the thickness of the metal plate itself, and in this embodiment, 200 [μ
m] to 140 [μm] to 180
[Μm] (70 [%] to 90% of the thickness of the metal plate itself)
[%]) The protruding land structure 12 is formed. Therefore, the protruding land structure 12 is connected to the main body of the metal plate by the thin portion 11 having an extremely small thickness. In the present embodiment, the thickness of the thin portion 11 is 20 [μm] to 60 [μm] (10 [%] to 30 [%] of the thickness of the metal plate itself), and the land structure 12 itself protrudes. Due to the pressing force against the direction, the projection is processed and thinned by etching, so that the processing is easy, the warpage is small, and the projection is easily separated.

The thickness of the frame body is 200 [μ
m], and if necessary, 400
[Μm] thick frame may be used. Also, in the embodiment, the protrusion amount of the land structure 12 is set to be a majority or more, but may be set to a half or less.
The protrusion amount can be set in a range where the thin portion 11 is broken. The grooves 13 and the protrusions 14 can be formed by press working instead of etching.

Here, a description will be given of half-cutting when forming the land structure 12 of the present embodiment. FIG. 6 is a structural view of the land component 12, the metal plate 26, and the thin portion 11 when pressed against the metal plate 26, which is a frame component, to form a half-cut state.

As shown in FIG. 6, the metal plate 26
When the land structure 12 having the grooves 13 and the protrusions 14 is formed, the land structure 12 of the metal plate 26 includes a punching dripping portion 27 generated by the punching process shown in FIG. The land portion 12 itself has a shearing portion 28 and a breaking portion 29 that becomes a fracture surface when the land component 12 is easily separated by a pressing force in a direction in which the land component 12 itself protrudes. As the formation of the land structure 12, when punching with a punch member, the punching dripping portion 27, the shearing portion 28, the breaking portion 29
Are formed in this order. The portion to be the break portion 29 is the thin portion 11, which is shown as having a considerable thickness in the drawing because it is modeled, but formed substantially in an extremely thin state. Have been. In the punching process of the metal plate 26, the ideal state is A: B = 1: 1, and the punch member punches the metal plate 26 and punches the metal plate 26 at half the thickness. The members are stopped to complete the punching, and the conditions are appropriately set.

In the blanking process, by changing the value of the clearance, the shearing portion 28 and the breaking portion 29 are changed.
When the clearance is reduced, the shear portion 28 can be made larger than the break portion 29. When the clearance is increased, the shear portion 28 can be made smaller than the break portion 29. Can be. Therefore, by setting the clearance to zero and keeping the length of the broken portion 29 short, the timing of the completion of the removal of the metal plate 26 is delayed, so that the removal is not completed even if the punch member enters more than half of the metal plate 26. Can be done. Here, the clearance indicates the amount of the gap formed by the difference between the size of the punch member and the size of the opening of the die.

Next, an embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to the drawings. 7 and 8
FIG. 1 is a cross-sectional view showing a resin-sealed semiconductor device of the present embodiment. It should be noted that the plan view showing the resin-sealed semiconductor device of the present embodiment only shows a so-called rectangular shape and is omitted. Also, the bottom view is omitted because it has a rectangular shape in which the land components are arranged in a grid.

As shown in FIGS. 7 and 8, the resin-encapsulated semiconductor device of this embodiment uses a terminal land frame having a land structure having a groove at the top and a projection at the bottom as described above. And a conductive adhesive 31 such as a silver paste on the first land members 30a and 30b of the land members 30.
Alternatively, a semiconductor element 32 mounted and bonded by an insulating paste and a second land structure 30 c, 30 d, 30 e disposed around the semiconductor element 32 and electrically connected to the semiconductor element 32 by a thin metal wire 33. , 30f,
The semiconductor element 32 is formed by projecting the bottom surface of each land structure 30.
Is a resin-encapsulated semiconductor device comprising a sealing resin 34 encapsulating the outer periphery of the semiconductor device, and the land structure 30 is a resin-encapsulated semiconductor device having a protrusion 35. 7 and 8
In the figure, the illustration of the groove on the top of the land structure 30 is omitted.

In the present embodiment, the amount of protrusion of the land structure 30 from the sealing resin 34 is determined by subtracting the amount by which the land structure 30 protrudes from the frame body from the thickness of the used terminal land frame body. And the amount of the protrusion 35 added thereto, and has a stand-off at the time of board mounting.

Further, as shown in FIG.
And the height of the land members 30a and 30b, and the land members 30c and 30c for electrical connection with the semiconductor element 32.
By providing a difference between the heights of 30d, 30e, and 30f, a part of the land structure can be easily arranged on the lower surface of the semiconductor element 32, and the size of the semiconductor device can be reduced. In addition, it is easy to secure a gap between the substrate and the mounting substrate, and the mechanical and thermal reliability is improved. By increasing the height of the land elements 30a and 30b for mounting the semiconductor element, the semiconductor element 32 can be easily overhanged on a part of the land elements 30c and 30d, and a small semiconductor device can be obtained. Will be possible.

In the present embodiment, a structure is used in which a part of the land structure 30 is used as a support for the semiconductor element 32.
The other land structures 30 are used as electrodes, and constitute a land grid array in the bottom surface arrangement. Then, the land element 30 for supporting the semiconductor element can be appropriately set according to the size of the semiconductor element to be mounted and the number of pins. Also, unlike the resin-encapsulated semiconductor device using a conventional lead frame, the area of the land structure 30 is large enough to allow wire bonding of 100 [μm] or more, and has a land bottom area having mounting connection strength. If provided, in other words, the protrusion 35 on the bottom surface can improve the connection strength and contribute to the reduction of the land size.

The height is also 140 [μm] to 180 [μm].
m], a high-density electrode arrangement is possible,
A small and thin resin-sealed semiconductor device can be realized. Further, the structure of this embodiment can cope with an increase in the number of pins and can realize a high-density surface-mount type resin-encapsulated semiconductor device.
An extremely thin resin-encapsulated semiconductor device of about 500 [μm] or less of [mm] can be realized.

In the resin-encapsulated semiconductor device of the present embodiment, the area of the top surface of the land structure 30 on the side sealed by the encapsulation resin 34 is exposed from the encapsulation resin 34. The edge of the top surface of the land structure 30 on the sealed side is larger than the area of the bottom surface of the structure 30 and has a curved surface, and the land structure 30 has a substantially inverted trapezoidal cross-sectional shape. Is what it is.

With this structure, the bite between the sealing resin 34 and the land structure 30 is improved, and the groove on the land structure 30 is also filled with the sealing resin 34 to improve the adhesion. In addition, it can withstand various stresses at the time of mounting on a substrate and obtain reliability. Since the sealing resin 34 is also filled in the upper groove, the connection reliability of the thin metal wire connected in the vicinity is improved.

By setting the thickness of the terminal land frame itself to be large, the biting area between the land structure 30 and the sealing resin 34 is enlarged, and the anchor effect is increased, so that the reliability is further improved. I can do it.

Next, an embodiment of a method of manufacturing a resin-sealed semiconductor device according to the present invention will be described with reference to the drawings. FIGS. 9A to 9F are cross-sectional views for each process showing the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment.

First, as shown in FIG. 9A, the frame main body 36 is disposed in the region of the frame main body 36, connected to the frame main body 36 by the thin portion 37, and protrudes from the frame main body 36. Protrusion 3 formed
8. A plurality of land structures 39 having grooves (not shown)
The land member 39 is plated so that the thin portion 37 is broken and the land member 39 is separated from the frame body 36 by a pressing force in a direction in which the land member 39 protrudes from the frame body 36. Prepare a terminal land frame.

Next, as shown in FIG. 9B, a predetermined first land structure 39a, 39b is located on the side of the terminal land frame where the land structure 39 protrudes. The semiconductor element 41 is placed and bonded thereon with the conductive adhesive 40 or the insulating paste. However, the grooves may not be provided on the upper surfaces of the land components 39a and 39b for mounting the semiconductor element.

This step corresponds to a die bonding step in an assembling step of a semiconductor device, and includes the steps of applying a conductive adhesive 40 to a terminal land frame,
The semiconductor element 41 is joined by the mounting and heat treatment of No. 1. Here, the terminal land frame has a pressing force in a direction in which the land structure 39 protrudes, that is, a pressing force from the bottom surface side of the land structure 39,
Easily separated, but in the direction in which it protrudes,
That is, the structure is not separated by the pressing force from the upper surface portion of the land structure 39, and is separated only by the pressing force from one direction. Even if pressure is applied, the land members 39 are not separated, and die bonding can be performed stably.

Next, as shown in FIG. 9 (c), of the semiconductor element 41 and the land structure 39 joined on the terminal land frame, the second land structures 39c, 39d, 39e, which become external land electrodes, are formed. 39f is electrically connected with the thin metal wire 42. Therefore, the land structure 39
Is 100 [μm] for the surface to which the fine metal wire 42 on the upper surface is connected.
□ or more. Also in this step, since the land structure 39 has a structure that separates only into the pressing force from one direction, the pressing force acts downward when the thin metal wire 42 is connected to the upper surface of the land structure 39. However, the land members 39 are not separated and can be wire-bonded stably.
The connection reliability is improved by wire bonding between the grooves on the upper part of the land structure. This is because the stress is absorbed by the groove, so that the stress applied to the connection portion of the thin metal wire 42 can be generated.

The number of grooves on the land structure 39 may not be plural, and the land structures 39c and 39d may be so arranged that the semiconductor element 41 can overhang the land structure.
Can also be connected to the end of the outer part of the.

Next, as shown in FIG. 9D, a molded part having a plurality of regions of the semiconductor element 41 joined on the terminal land frame and the thin metal wires 42 as the electric connection means is formed in the sealing device. It is mounted at a predetermined position in the large cavities and is collectively sealed with a sealing resin 43. Normally, a plurality of molded portions arranged in the front, rear, left and right directions in the terminal land frame are collectively sealed on one side by transfer molding using upper and lower sealing dies. Here, only the surface of the terminal land frame on which the semiconductor element 41 is mounted is sealed with the sealing resin 43, and has a single-sided sealing structure. In addition, by changing the cutting position with the same mold, a semiconductor device having a different size can be obtained only by changing the terminal land frame. Reduction of mold cost It is possible to improve the operation rate.

Since each land structure 39 is provided so as to protrude, the sealing resin 43 bites against the projecting structure. And the groove on the upper surface of the land structure is filled with the resin, so that the connection strength is improved.

Next, as shown in FIG.
For 3, the cutting portion 44 at a predetermined position is cut by a cutting blade. Here, a resin-sealed semiconductor device is obtained in which the sealing resin is cut into individual sections. Further, since the portion of the frame main body 36 which is the metal plate of the terminal land frame can be separated later, it is not necessary to cut the metal plate portion of the terminal land frame, and the life of the cut teeth is extended. Further, since the width of the cutting blade can be set to a thickness suitable for cutting the sealing resin 43, the cutting productivity can be improved.

Then, in a state where the terminal land frame is fixed, for example, with the end of the terminal land frame fixed and the region sealed with the sealing resin 43 free, the land structure 39 is formed from below the terminal land frame. A pressing force is applied to the bottom surface. In this case, by fixing the end of the terminal land frame and pushing up from below by a push-up pin or the like to apply a pressing force, the land structure 39 and the frame body 36 of the terminal land frame are separated. In this case, the extremely thin portion 37 connecting the land structure 39 and the frame body 36 is separated by being broken by a pressing force generated by pushing up. In the case of pushing up, only a part of the land structure 39 located below the semiconductor element 41 near the center, for example, may be pushed up,
Alternatively, the land members 39 around the semiconductor element 41 may be pushed up, or all the land members 39 may be pushed up. However, due to the partial push-up, the push-up is performed in a range where the land structure 39 does not peel off from the sealing resin 43. Further, any structure can be used as long as the land structure 39 can be separated by means other than pushing up. For example, the land body 39 can be separated by applying a twist to the frame body 36, and can also be separated by peeling the frame body 36 itself. Yes, but with due regard to reliability.

By the above steps, as shown in FIG. 9 (f), the ultra-thin portion connecting the land structure 39 and the frame body is broken by the pushing force of the pushing up and separated. Thus, a resin-sealed semiconductor device 45 can be obtained. In the separation step, the peeling between the sealing resin and the frame main body is weak in the adhesion between the sealing resin and a region other than the portion where the land main body 39 of the frame main body is formed, and the land main body 39 is separated. Thereby, the resin-encapsulated semiconductor device can be taken out.

In the land structure 39, the concave and convex shape bites into the sealing resin, and the groove on the upper surface of the land structure 39 is filled with the sealing resin to improve the connection strength.
It is formed in the sealing resin without peeling. As shown in the figure, the resin-encapsulated semiconductor device 45 has land members 39 arranged on the bottom surface thereof, and the land members 39 are provided so as to protrude from the bottom surface of the sealing resin 43.
Together with a stand-off when mounted on a substrate. The standoff can optimize the protrusion 38 by etching, and the protrusion 38 of the land structure 39 can be optimized.
Since a stable bonding strength with the solder can be obtained at the time of mounting at the protruding portion, the minimum size can be set so that it can be easily separated after resin molding, and it is sufficient if the strength does not separate during production.

Further, the projecting portion 3 provided on the land
The grooves 8 and the grooves need not be provided on all the land structures 39, and may be, for example, only the grooves or only the protrusions 38 according to the required reliability. Further, the combination may be arranged only on the outer land structure 39, and various combinations are possible.

Here, the amount of protrusion of the land member 39 of the resin-encapsulated semiconductor device 45 is calculated by subtracting the amount by which the land member 39 protrudes upward from the thickness of the frame main body. Is added, and a standoff as an external land electrode of the land structure 39 is formed. In the present embodiment, 200 [μm]
Land body 39 is attached to the frame body of thickness
40 [μm] to 180 [μm] (70 [%] to 90 [%] of the thickness of the frame body), so that the amount of stand-off height is 20 [μm] to 60 [μm] (frame The thickness of the main body is 10% to 30%), and a land electrode having a stand-off when mounted on a substrate can be obtained. In addition, since the protruding portion 38 can be selected at an appropriate height by etching, the thickness of the frame body is suitable for production,
The thickness can be set in consideration of the bonding force with the sealing resin 43.

Further, since the thin portion 37 has the projection 38, the thin portion 37 has a minimum size, and is easily separated, so that the thin portion 37 can be collectively arranged on a tray or the like, thereby improving productivity. Also, since the standoff can be easily increased in the inspection process, the contact reliability of the inspection is improved.

Next, another embodiment of the terminal land frame of the present invention will be described with reference to the drawings.

FIG. 10 is a plan view showing the terminal land frame of the present embodiment. FIG. 11 is a cross-sectional view showing the terminal land frame of the present embodiment, and FIG.
The section of -B1 part is shown. The basic concept is the same as that of the terminal land frame of the above-described embodiment.

As shown in the figure, the terminal land frame of this embodiment has a frame main body 46 made of copper or a metal plate used for a normal lead frame such as 42-alloy, and an area within the frame main body 46. And a plurality of land members 49 connected to the frame body 46 by a thin portion 47 and having a groove on the upper surface and a protrusion 48 on the bottom surface formed to protrude from the frame body 46.
And a die pad portion 50. That is,
Frame body 46, land structure 49, die pad 5
The 0 and the thin portion 47 are formed integrally from the same metal plate. Then, the land portion 49 is broken by the pressing force in the direction protruding from the frame body 46, and the land portion 49 is
It has a more separated configuration.

Here, the terminal land frame of this embodiment has the same configuration as the terminal land frame of the above-described embodiment shown in FIGS. 1, 2 and 3, but has a die pad portion 50 on which a semiconductor element is mounted. It is provided.

Therefore, by applying a pressing force in a protruding direction to the land structure 49 and the bottom surface of the die pad portion 50, the thin portion is broken, and the land structure 49 49 and the die pad portion 50 are separated from each other. As shown in FIG. 10, the land structure 49 is formed in the region of the frame main body 46, but can be formed continuously in the left, right, up and down directions. There is no need to provide. Further, although the shape of the land structure 49 is a square shape with chamfered corners, the shape may be circular or rectangular, and the size may be all the same in the terminal land frame, or the resin-encapsulated semiconductor device may be formed. However, in the case of a land electrode, the land structure 49 located in the peripheral portion may be enlarged in order to relax the stress at the time of mounting the substrate. In the present embodiment, the size of the upper surface of the land structure 49 is determined by mounting a semiconductor element and connecting the semiconductor device with a thin metal wire such as a gold wire as an electrical connection means.
Any size that can be bonded and that is suitable for mounting connection may be used, and is 100 [μm] φ or more.

Further, the terminal land frame shown in this embodiment does not have the inner lead portion and the outer lead portion as in the prior art, and the land structure 4 serves as a land electrode.
When the resin-encapsulated semiconductor device is formed using the terminal land frame by arranging the land components 49 in a lattice or staggered pattern on the surface on which the semiconductor element is mounted, A resin-encapsulated semiconductor device having land electrodes arranged in a plane can be realized. Further, since the configuration serving as the electrode is not the beam-shaped lead configuration but the land configuration body 49 as in the related art, they can be arranged in a plane, and the degree of freedom in the arrangement of the land configuration body 49 is improved. It is possible to cope with the increase in the number of pins.

Next, a method for manufacturing the terminal land frame of the present embodiment will be described. The method of manufacturing the terminal land frame is also the same as the method of manufacturing the terminal land frame of the above-described embodiment, and the basic concept is the same as the method of manufacturing the terminal land frame of the above-described embodiment. At the same time, a die pad portion is also formed.

First, an etching resist film is formed on the upper surface and the lower surface of the metal plate constituting the frame.

Next, with respect to the etching resist film formed on the upper surface of the metal plate, at least a portion where a groove portion is desired to be formed is removed by removing the etching resist film on at least a portion that can be a die pad portion and a land structure. Form a part. In addition, at least a portion that can be a die pad portion and a land structure, an opening is formed by removing an etching resist film other than a portion where a protrusion is desired to be formed on the bottom surface.

Next, the metal plate is etched, and the metal plate portion exposed from the opening is etched to form a groove and a protrusion.

By removing the etching resist films on the upper and lower surfaces of the metal plate, a frame structure having a groove and a projecting portion with respect to the metal plate is formed.

Next, a method of completing the terminal land frame by pressing the formed frame structure will be described.

First, the frame structure of the terminal land frame in which the groove and the protrusion are formed is placed on the die of the punching die, and is pressed from above the frame structure by the pressing die. Then, a punching process is performed on the frame member fixed at a predetermined position on the die portion by pressing the frame member from above, so that a part of the frame member protrudes toward the opening side of the die portion side. By pressing, a predetermined portion of the frame structure is cut in a semi-cut state, and a land structure and a die pad portion are formed. That is, for a frame structure fixed at a predetermined position on a die portion of a punching die, a punching process is performed by pressing a punch member from above the frame structure, and a part of the frame structure is opened on the die side. Then, a predetermined portion of the frame structure is half-cut so as to form a land structure and a die pad portion.

As described above, the frame main body made of a metal plate and the groove and the bottom are provided in the region, connected to the frame main body by the thin portion, and formed so as to protrude from the frame main body. It is possible to manufacture a terminal land frame including a plurality of land structures having projecting portions and a die pad portion.

Similarly, in the terminal land frame of the present embodiment, the formed land structure and the die pad portion have a pressing force in a direction in which they protrude.
That is, it is easily separated by the pressing force from the bottom surface side of the land structure and the die pad portion, and by the protruding direction, that is, the pressing force from each upper surface portion of the land structure and the die pad portion. Does not separate, and has a structure that separates only to a pressing force from one direction.

In the present embodiment, when the land structure and the die pad portion are formed on the metal plate, the amount of protrusion is made to be a majority of the thickness of the metal plate itself, and in this embodiment, 200 [μm ], The land structure and the die pad portion are formed so as to protrude from 140 [μm] to 180 [μm] (70 [%] to 90 [%] of the thickness of the metal plate itself). Therefore, the land structure and the die pad formed so as to be protruded are connected to the main body of the metal plate by the extremely thin portion. In the present embodiment, the thickness of the thin portion is 20 [μm] to 60 [μm] (10 [%] to 30 [%] of the thickness of the metal plate itself), and the land structure and the die pad portion protrude. It can be easily separated by the pressing force against the direction.

Next, a resin-sealed semiconductor device using the terminal land frame of the present embodiment will be described with reference to the drawings. FIG. 12 is a sectional view showing the resin-sealed semiconductor device of the present embodiment. The basic concept is the same as the structure of the resin-encapsulated semiconductor device using the terminal land frame of the embodiment described above.

As shown in FIG. 12, the resin-encapsulated semiconductor device of the present embodiment is the same as that of FIGS.
A semiconductor device having a semiconductor element mounted thereon using the terminal land frame shown in FIG. 1 and a semiconductor element 53 mounted and bonded on a die pad portion 51 by a conductive adhesive 52 such as a silver paste, and a semiconductor element 53 Land members 55 arranged in the periphery and electrically connected to the semiconductor element 53 by the thin metal wires 54, and a sealing resin 56 sealing the outer periphery of the semiconductor element 53 by projecting the bottom surface of each land member 55. And a resin-sealed semiconductor device comprising: In this embodiment, the amount of protrusion of the die pad portion 51 and the land structure 55 from the sealing resin 56 is determined based on the thickness of the terminal land frame body used.
The amount obtained by subtracting the amount by which the land component 55 protrudes from the frame main body is added to the amount by which the protruding portion 57 is added, and has a standoff at the time of board mounting. Further, the land structure 55 and the die pad portion 51 have a plurality of grooves (not shown) on the upper surface, and have the projecting portion 57 on the bottom surface.

In the present embodiment, the die pad 51
, The land structure 55 is used as an electrode, and in the bottom arrangement,
This constitutes a land grid array.

Further, the resin-encapsulated semiconductor device of the present embodiment has the land structure 55 on the side sealed by the encapsulation resin 56,
The area of the upper surface of the die pad portion 51 is exposed and protruded from the sealing resin 56, and the land structure 55 and the die pad portion
The land portion 55 on the sealed side and the edge portion on the upper surface of the die pad portion 51 have a curved surface and a substantially inverted trapezoidal cross-sectional shape. . With this structure, the sealing resin 56 and the land structure 5
5. It is possible to improve the bite with the die pad portion 51, and to improve the adhesiveness together with the function of filling the grooves on the upper surfaces of the land structure 55 and the die pad portion 51 with the sealing resin 56, thereby improving the adhesion. Resistance to stress is improved.

Also, with this structure, the protrusion 57
And highly reliable board mounting with solder
The reliability of the mounting can be greatly improved compared to the conventional mounting on a substrate using beam-shaped leads.
It has the same or higher reliability as the A-type semiconductor device.

Next, an embodiment of a method of manufacturing a resin-sealed semiconductor device according to the present invention will be described with reference to the drawings. In this embodiment, the basic concept is the same as the method of manufacturing a resin-encapsulated semiconductor device using the terminal land frame of the above-described embodiment. FIGS. 13A to 13F
4A to 4C are cross-sectional views illustrating a method of manufacturing the resin-encapsulated semiconductor device according to the present embodiment in each step.

First, as shown in FIG. 13A, a frame main body 58 is disposed in the region of the frame main body 58, connected to the frame main body 58 by a thin portion 59, and protrudes from the frame main body 58. Land structure 61 having a groove on the top surface and a protrusion 60 on the bottom surface
The land structure 61 and the die pad portion 62 are broken by the pressing force in the direction in which the land structure 61 and the die pad portion 62 protrude from the frame body 58, and the land structure 61 and the die pad portion 62 are A plated terminal land frame having a configuration separated from 58 is prepared.

Next, as shown in FIG. 13B, the land structure 61 of the terminal land frame and the die pad 6
The semiconductor element 64 is mounted on the die pad portion 62 by the conductive adhesive 63 and is bonded to the die pad portion 62 on the protruding surface side.
This step is a step corresponding to a die bonding step in an assembling step of the semiconductor device, in which the conductive element 63 is applied to the terminal land frame, the semiconductor element 64 is placed, and the semiconductor element 64 is joined by heat treatment. . Here, the terminal land frame is connected to the die pad portion 62.
Is easily separated by a pressing force in a direction in which the die pad portion protrudes, that is, a pressing force from a bottom portion side of the die pad portion 62, but in a direction in which it protrudes, that is, from a top surface portion of the die pad portion 62. Since it is a structure that does not separate according to the pressing force and separates only into the pressing force from one direction, even when a downward pressing force acts on the frame when the semiconductor element 64 is mounted, the die pad portion 62 does not separate.
Can be stably bonded without being separated. Since the semiconductor element 64 is mounted on the die pad portion 62, the groove portion is preferably provided in the peripheral portion. Further, it does not need to be provided in a small semiconductor device. It goes without saying that the semiconductor element 64 can be easily arranged on the land structure 61 by arranging the die pad portion 62 higher than the land structure 61, and the size can be reduced as well.

Next, as shown in FIG. 13C, the semiconductor element 64 bonded to the terminal land frame and the land structure 61 are electrically connected by the thin metal wires 65.
Therefore, the size of the surface of the land structure 61 to which the fine metal wire 65 on the upper surface is connected is 100 [μm] □ or more.
Also in this step, since the land component 61 has a structure that separates only into the pressing force from one direction, the pressing force acts downward when the thin metal wire 65 is connected to the upper surface of the land component 61. Also, the land structure 61 can be stably bonded without being separated.

Next, as shown in FIG. 13D, a plurality of regions of the semiconductor element 64 bonded on the terminal land frame and the thin metal wires 65 as the electrical connection means are mounted in a predetermined large cavity recess. And sealing with a sealing resin 66. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. Here, only the surface of the terminal land frame on which the semiconductor element 64 is mounted is sealed with the sealing resin 66, and has a single-sided sealing structure. Since each land structure 61 and the die pad portion 62 are provided so as to protrude, the terminal land frame and the sealing resin 66 are formed even if the sealing resin 66 has a single-sided sealing structure so as to bite the protruding structure. With the adhesive. In addition, the one-sided mold that does not come into contact with the resin does not require a quenched ejector pin or the like, and can be simplified and inexpensive.

Next, as shown in FIG. 13E, the cutting portion 67 at a predetermined position is sequentially cut by the cutting blade with respect to the sealing resin 66. Further, it is not necessary to cut the portion of the frame body 58 of the terminal land frame, so that the life of the cutting blade is prolonged and the cutting productivity is improved.

Then, in a state where the terminal land frame is fixed, for example, with the end portion of the terminal land frame fixed and the region sealed with the sealing resin 66 being free, the land structure 61 and the land structure 61 from below the terminal land frame. A pressing force is applied to the bottom surface of the die pad portion 62. In this case, by fixing the end of the terminal land frame and pushing up from below by a push-up pin to apply a pressing force, the land structure 61, the die pad portion 62 and the frame body 58 of the terminal land frame are separated. It is. This is land structure 6
1. The extremely thin portion 59 connecting the die pad portion 62 and the frame main body 58 is separated by being broken by a pressing force generated by pushing up.

Then, as shown in FIG. 13 (f), the ultra-thin portion connecting the land structure 61, the die pad portion 62 and the frame main body is separated by being broken by the pushing force generated by pushing up. , Resin-encapsulated semiconductor device 68
Can be obtained. As shown in the figure, the resin-encapsulated semiconductor device 68 has a land structure 61 arranged on the bottom surface thereof, and a land structure 61 and a die pad portion 62 protruding from the bottom surface of the sealing resin 66. A standoff at the time is formed.

Next, another embodiment of the terminal land frame of the present invention will be described with reference to the drawings.

FIG. 14 is a plan view showing the terminal land frame of the present embodiment. FIG. 15 is a view showing details of a die pad portion of the terminal land frame.
15A is a plan view, and FIG. 15B is aa of FIG.
It is sectional drawing of one place. FIG. 16 is a diagram showing details of the reinforcing land structure of the terminal land frame.
16A is a plan view, and FIG. 16B is aa of FIG.
It is sectional drawing of one place. FIG. 17 is a diagram showing details of the land structure of the terminal land frame.
17 (a) is a plan view, and FIG. 17 (b) is aa of FIG. 17 (a).
FIG. 17C is a cross-sectional view of one location, and FIG. 17C is a cross-sectional view of bb1 location in FIG.

First, as shown in FIG. 14, the terminal land frame of this embodiment has a frame main body 69, a die pad portion 70 on which a semiconductor element is mounted, and a die pad portion 7.
0 is a terminal land frame composed of a land configuration 71 constituting an external land electrode, and a terminal land frame composed of a reinforcing land configuration 72 disposed at each corner of one chip area. It is. As shown in the figure, the reinforcing land structure 72 is larger than the other land structures 71.

As shown in FIG. 15, the die pad portion 70 of the terminal land frame of the present embodiment is provided with a plurality of grooves 73 on the upper surface side on which the semiconductor element is mounted, thereby improving the adhesion with the sealing resin. It has a configuration that can be used.

As shown in FIG. 16, the reinforcing land structure 72 of the terminal land frame according to the present embodiment is provided with a groove 74 in an annular shape to improve the adhesion with the sealing resin and reduce the stress. It has a configuration that can be used. Then, when sealed with the sealing resin, the area of the upper surface of the reinforcing land structure on the sealing resin side is larger than the area of the bottom surface of the reinforcing land structure on the side exposed from the sealing resin, and sealing is performed. The edge portion of the groove portion 74 on the upper surface of the reinforcing land structure on the side has a curved surface, the sealing resin is strongly bonded like the land, and the upper groove portion 74 is also filled, so that the substrate mounting reliability is high, The land structure 71 and the die pad portion 70 are protected. Alternatively, since the lower surface of the reinforcing land structure 72 has the protruding portion 75, the adhesive force with the solder is improved, and the mounting reliability is improved.

That is, the provision of the reinforcing land structure 72 increases the bonding force between the solder portion and the sealing resin portion, reduces the stress applied to the land structure 71 or the die pad portion 70, and increases the reliability of the resin sealing. It is possible to supply a fixed semiconductor device.

As shown in FIG. 17, the land structure 71 of the terminal land frame according to the present embodiment has a plurality of grooves 76 on its upper surface, and has an elliptical shape. It is configured so that the stress when the sealing resin is filled can be reduced. In addition, the protrusion 77
Are provided, the adhesive strength with the solder at the time of mounting is improved, and the mounting reliability is improved.

As described above, by using the terminal land frame as shown in the present embodiment, the semiconductor element is mounted, and after sealing with resin, the sealing resin portion is cut, and the land structure and the die pad portion are cut from below. By simply removing the frame body itself by pushing up, a resin-encapsulated semiconductor device in which land electrodes electrically connected to semiconductor elements are arranged on the bottom surface of the resin-encapsulated semiconductor device can be obtained.

As a result, a surface-mount type semiconductor device is obtained, and the reliability of board mounting can be improved as compared with conventional mounting by lead bonding. Further, in the resin-encapsulated semiconductor device, the amount of protrusion of each land structure from the sealing resin is obtained by subtracting the amount of each land structure itself protruding from the frame body from the thickness of the used terminal land frame body. The amount of protrusion added to the frame allows you to select the amount of protrusion that is easy to separate.The protrusion secures most of the stand-off, improving productivity and mounting the board when the product is separated from the frame body In this case, a standoff at the time is formed, the reliability of connection with the solder is improved by the function of the protruding portion, and it is not necessary to form the standoff of the land electrode in a separate step.

The resin-encapsulated semiconductor device of the present embodiment does not use a substrate provided with land electrodes unlike a BGA type semiconductor device. Is more advantageous than the conventional BGA type semiconductor device in terms of mass productivity and cost. Further, in the product processing step, as described above, after cutting the resin portion with the cutting teeth and then only separating the frame main body, the completed body can be easily obtained,
Eliminates lead cutting and bending steps that were required for conventional separation from the frame, eliminating damage to products and restrictions on cutting accuracy due to lead cutting. It can provide innovative technology.

[0125]

As described above, with the terminal land frame of the present invention, a resin-encapsulated semiconductor device having land electrodes can be realized in place of the conventional beam-shaped lead electrodes. According to the present invention, the land electrode on the bottom surface of the resin-encapsulated semiconductor device can be used without using a substrate or the like.
High reliability and self-aligned land electrode standoffs can be formed by a processing method that can be formed from the frame state and makes use of the features of etching processing and the advantages of press processing. It is possible to realize a leadless package type resin-sealed semiconductor device having electrodes.

Further, in the method of manufacturing the resin-encapsulated semiconductor device, there is no need for a lead cut step and a lead bend step because there are no leads, eliminating restrictions on line and space, design specifications, and the like in frame production. Then, after resin sealing, the resin part is cut,
The frame body can be easily separated to obtain a semiconductor device after resin sealing, and low-cost manufacturing can be realized by reducing the number of steps. Further, since there is no resin leakage at the time of resin sealing and no resin burr is generated on the land structure, a post-process such as a resin burr removal process is unnecessary.

[Brief description of the drawings]

FIG. 1 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a land structure of a terminal land frame according to an embodiment of the present invention.

FIG. 3 is a view showing a land structure of a terminal land frame according to an embodiment of the present invention;

FIG. 4 is a sectional view showing a method for manufacturing a terminal land frame according to an embodiment of the present invention.

FIG. 5 is a sectional view showing the method for manufacturing the terminal land frame according to the embodiment of the present invention;

FIG. 6 is a sectional view showing the method for manufacturing the terminal land frame according to the embodiment of the present invention;

FIG. 7 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 8 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 9 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 10 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 11 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 12 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 13 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 14 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 15 is a view showing a die pad portion of the terminal land frame according to the embodiment of the present invention;

FIG. 16 is a diagram showing a reinforcing land structure of a terminal land frame according to an embodiment of the present invention.

FIG. 17 is a diagram showing a land structure of a terminal land frame according to an embodiment of the present invention.

FIG. 18 is a plan view showing a conventional lead frame.

FIG. 19 is a sectional view showing a conventional resin-encapsulated semiconductor device.

FIG. 20 is a plan view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Frame frame 2 Die pad part 3 Suspended lead part 4 Inner lead part 5 Outer lead part 6 Tie bar part 7 Semiconductor element 8 Fine metal wire 9 Sealing resin 10 Frame main body 11 Thin part 12 Land structure 12a Bottom part 13 Groove part 14 Projection part 15 Metal plate 16 Etching resist film 17 Etching resist film 18 Opening 19 Opening 20 Frame structure 21 Die part 22 Pressing die 23 Opening 24 Punch member 25 Concave part 26 Metal plate 27 Pull-out part 28 Shear part 29 Break part 30 Land Structure 31 Conductive adhesive 32 Semiconductor element 33 Thin metal wire 34 Sealing resin 35 Projection 36 Frame body 37 Thin part 38 Projection 39 Land structure 40 Conductive adhesive 41 Semiconductor element 42 Fine metal wire 43 Sealing resin 44 Cutting Part 45 Resin-sealed semiconductor Device 46 Frame body 47 Thin part 48 Projection 49 Land structure 50 Die pad 51 Die pad 52 Conductive adhesive 53 Semiconductor element 54 Fine metal wire 55 Land structure 56 Sealing resin 57 Projection 58 Frame body 59 Thin part 60 Projection Unit 61 Land Structure 62 Die Pad 63 Conductive Adhesive 64 Semiconductor Element 65 Fine Metal Wire 66 Sealing Resin 67 Cutting Part 68 Resin Sealed Semiconductor Device 69 Frame Body 70 Die Pad 71 Land Structure 72 Reinforced Land Structure 73 Groove 74 Groove 75 Projection 76 Groove 77 Projection

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Osamu Adachi, Inventor 1-1, Yukicho, Takatsuki-shi, Osaka, Japan Matsushita Electronics Corporation (72) Inventor Toru Nomura 1-1-1, Yukicho, Takatsuki-shi, Osaka, Matsushita Electronics Inside the corporation

Claims (12)

[Claims] 1. A frame main body made of a metal plate, and a plurality of land structures provided in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. And a terminal land frame connected to the frame main body by a thin portion, and a support for mounting a semiconductor element formed so as to protrude from the frame main body, wherein each of the land structures has a groove at an upper portion thereof. A terminal land frame having a protrusion at the bottom. 2. The support according to claim 1, wherein the support for mounting the semiconductor element, which is connected to the frame main body by a thin portion and protrudes from the frame main body, is a land structure. Terminal land frame. 3. The support according to claim 1, wherein the support for mounting the semiconductor element, which is connected to the frame main body by a thin portion and protrudes from the frame main body, is a die pad part. Terminal land frame. 4. A metal plate forming a frame,
A first step of forming an etching resist film on each of the upper and lower surfaces, a second step of forming an opening in a portion of the etching resist film where a groove is to be formed in the metal plate, and etching the metal plate. Then, a third step of processing the metal plate portion exposed from the opening to form a groove, and pressing a predetermined position where the groove of the metal plate is formed with a mold to form a half-cut state. And a fourth step of projecting and forming a land structure. 5. A frame main body made of a metal plate and a plurality of lands arranged in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A resin-encapsulated semiconductor device formed by using a terminal land frame made of a body, comprising: a semiconductor element mounted on a first land structure group; and a semiconductor element disposed around the semiconductor element; A second land component group electrically connected to the element by a thin metal wire, and a sealing resin that protrudes a bottom surface of each of the land component groups and seals an outer periphery of the semiconductor element; A resin-encapsulated semiconductor device, wherein a bottom surface of each land group has a protrusion. 6. A frame main body made of a metal plate, and a plurality of lands arranged in a region of the frame main body, connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body. A resin-encapsulated semiconductor device formed by using a terminal land frame made of a body, comprising: a semiconductor element mounted on a first land structure group; and a semiconductor element disposed around the semiconductor element; A second land component group electrically connected to the element by a thin metal wire, and a sealing resin that protrudes a bottom surface of each of the land component groups and seals an outer periphery of the semiconductor element; A resin-encapsulated semiconductor device, wherein an upper surface of each land structure group has a groove. 7. The area of the top surface of the land structure on the side sealed with the sealing resin is larger than the area of the bottom surface of the land structure on the side exposed from the sealing resin. The resin-encapsulated semiconductor device according to claim 5, wherein an edge portion of an upper surface of the land structure has a curved surface. 8. A frame main body made of a metal plate, and a semiconductor element formed in a region of the frame main body, connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body. A die pad portion, and a plurality of land structures disposed in the region of the frame main body and around the die pad portion, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A resin-encapsulated semiconductor device formed using a terminal land frame comprising: a semiconductor element mounted on the die pad portion; and a semiconductor element disposed around the semiconductor element; An electrically connected land structure group, and an outer periphery of the semiconductor element formed by projecting a bottom surface of the land structure group and a bottom surface of the die pad portion. A resin-encapsulated semiconductor device, comprising: a sealing resin that seals a bottom surface of each land constituent body group and the die pad portion. 9. A frame main body made of a metal plate and a semiconductor element formed in a region of the frame main body, connected to the frame main body by a thin portion, and formed to protrude from the frame main body. A die pad portion, and a plurality of land structures disposed in the region of the frame main body and around the die pad portion, connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body. A resin-encapsulated semiconductor device formed using a terminal land frame comprising: a semiconductor element mounted on the die pad portion; and a semiconductor element disposed around the semiconductor element; An electrically connected land structure group, and an outer periphery of the semiconductor element formed by projecting a bottom surface of the land structure group and a bottom surface of the die pad portion. A resin-encapsulated semiconductor device, comprising: a sealing resin in which a sealing member is sealed, and an upper surface portion of each of the land constituent groups and the die pad portion has a groove. 10. The area of the top surface of the land structure on the side sealed with the sealing resin is larger than the area of the bottom surface of the land structure on the side exposed from the sealing resin. The edge portion on the top surface of the land structure has a curved surface, and the area of the top surface of the die pad portion on the side sealed with the sealing resin is the area of the bottom surface of the die pad portion on the side exposed from the sealing resin. 10. The resin-encapsulated semiconductor device according to claim 8, wherein an edge portion of the upper surface of the die pad portion on the side of the die pad which is larger than that of the die pad portion has a curved surface. 11. A frame body made of a metal plate and a plurality of lands disposed in a region of the frame body, connected to the frame body by a thin portion, and formed to protrude from the frame body. A terminal land comprising a body group, wherein the land structure group is configured such that the thin portion is broken by a pressing force in a direction protruding from the frame body and the land structure group is separated from the frame body. A step of preparing a frame, a step of mounting a semiconductor element on a protruding side of a part of the land structures of the land structure group of the terminal land frame, and a step of mounting the mounted semiconductor element and the land structure with a thin metal wire. Electrically connecting and sealing only the upper surface side of the terminal land frame around the semiconductor element with a sealing resin. Forming a resin-sealed semiconductor device, cutting the sealing resin on the upper surface side of the terminal land frame, and fixing the frame main body of the terminal land frame from the bottom side of the frame main body. A pressing force is applied to the bottom surface side of the land structure to break a thin portion connecting the land structure group and the frame main body, to separate the resin-encapsulated semiconductor device from the frame main body, and to align them. A method of manufacturing a resin-sealed semiconductor device. 12. A frame main body made of a metal plate and a semiconductor element formed in a region of the frame main body, connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body. Die pad part,
In the area of the frame main body, disposed around the die pad portion, connected to the frame main body by a thin portion, and comprises a plurality of land components formed to protrude from the frame main body, A terminal land frame is provided in which the die pad portion and the land structure are configured so that the thin portion is broken and the land structure is separated from the frame body by a pressing force in a direction protruding from the frame body. Performing a step of mounting a semiconductor element on a side of the terminal land frame where the die pad portion protrudes; a step of electrically connecting the mounted semiconductor element and the land structure with a thin metal wire; Enclosing only the upper surface side of the terminal land frame with a sealing resin, A step of cutting the sealing resin on the upper surface side of the null land frame, and a bottom surface side of the land structure and a bottom surface side of the die pad portion from the bottom surface side of the frame main body in a state where the frame main body of the terminal land frame is fixed. A thin portion connecting the land structure group and the die pad portion to the frame main body is broken, and the resin-encapsulated semiconductor device is separated from the frame main body and aligned. Manufacturing method of a resin-sealed semiconductor device.