JPH11224918A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device of a gang bonding and ball grid type generating no improper connection and realize in-batch connection of chip electrodes with use of a heat tool having no projection part, and also to provide a method for manufacturing the semiconductor device. SOLUTION: A metallic pattern 5 for conducting chip electrodes 3 and solder balls 6 is provided on a chip mounting surface 9 of a carrier 1. The solder balls 6 of a ball shape come into contact with the metallic pattern 5 and also are passed through associated through-holes 10 made in the carrier 1 and projected to the mounting surface 9. Thermal conducting parts 7 are provided embedded in through-holes 12 made in the carrier 1 directly below the chip electrodes 3, as made to contact with the pattern 5 on the chip mounting surface 9 of the carrier 1 and formed on the other side with projections 14. Also provided is a method for manufacturing a semiconductor device through in-batch gang bonding through the application of heat and pressure to the projections 14 of the thermal conduction parts 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a structure of a semiconductor device and a method of manufacturing the same, and more particularly, to a gang bonding type ball grid type semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a ball grid type semiconductor device of a bump bonding type which does not use a wire for conduction of a chip electrode 42 of a chip 41, as shown in FIG.
Chip 41, chip electrode 42, film carrier 43,
Solder ball 44, solder resist 45, metal pattern 4
6, a metal pattern 46 is provided on the solder ball mounting surface 48 so as to be in contact with the solder ball portion 44, and is filled in a through hole 49 provided below the chip electrode 42; A semiconductor in which a filled metal portion 51 is formed, which is in contact with the metal pattern 46 in the through hole area on the mounting surface 48 and protrudes from the chip mounting surface 50 and contacts the chip electrode 42 to conduct the chip electrode 42 and the solder ball 44. A device has been proposed.

[0003] A bonding method in such a semiconductor device is to form a solder resist 45 and a metal pattern 46 necessary for forming solder balls on a film carrier 43 as shown in FIG. The chip 41 is mounted so that the chip electrode 42 is in contact with the filling metal portion 51 exposed at 50, and the solder ball mounting surface 4
After heating from 8 and temporary bonding, the capillary 52 is applied to the metal pattern 46 on the filling heating unit 51 and ultrasonically oscillated, and the chip electrodes are ultrasonically oscillated through the filling metal unit 51, whereby each chip electrode is connected. A method of sequentially bonding is used.

[0004]

It is desirable to perform the bonding all at once in consideration of productivity. However, the manufacturing process of the solder resist 45 includes water treatment and chemical treatment. Since the resist 45 cannot be manufactured, the solder resist 45 is formed on the metal pattern 46 at the time of bonding.

Therefore, when performing a batch bonding using a heat tool having a flat heating portion, the solder resist 45 disturbs and the heat tool cannot contact the metal pattern 46 immediately below the filling metal portion 51. Could not be bonded.

Further, if a heat tool provided with a plurality of protrusions is used, it is possible to perform joint joining. However, if a large number of protrusions are provided, poor connection may occur when the heat tool has poor flatness. was there.

SUMMARY OF THE INVENTION An object of the present invention is to provide a ball grid type semiconductor device using a gang bonding method in which chip electrodes can be collectively joined without a connection failure by using a heat tool having no protruding portion, and its manufacture. It is to provide a method.

[0008]

According to a first aspect of the present invention, there is provided a ball grid type semiconductor device of a gang bonding system, wherein a chip electrode and a solder ball portion are provided on a chip mounting surface of a carrier. A conductive metal pattern is provided, and the solder ball portion comes into contact with the metal pattern and a spherical portion protrudes from the mounting surface through a through hole provided in the carrier. It is characterized in that a heat conducting portion is provided which is filled in the hole, is in contact with the metal pattern on the chip mounting surface of the carrier, and has a projection formed on the other surface.

According to a second aspect of the present invention, a metal pattern is provided on a chip mounting surface of a carrier for electrically connecting a chip electrode and a solder ball portion, and the solder ball portion comes into contact with the metal pattern and is provided on the carrier. The spherical part protrudes from the mounting surface through the hole, fills the through hole provided in the carrier below the chip electrode, contacts the metal pattern on the chip mounting surface of the carrier, and the protrusion on the other surface A method for manufacturing a ball grid type semiconductor device of a gang bonding system provided with a formed heat conducting portion, wherein gang bonding is performed at a time by applying heat to a protruding portion of the heat conducting portion, thereby forming a chip electrode and a metal. It is characterized in that pattern connection is performed.

According to a third aspect of the present invention, there is provided a semiconductor device comprising: a metal pattern formed on an upper surface of a carrier; a heat conductive portion connected to the metal pattern and projecting from a bottom surface of the carrier and an upper surface of the metal pattern; A resin adhesive layer applied to the upper surface of the metal pattern, a chip mounted on the resin adhesive layer, a chip electrode provided on the chip, and connected to the upper surface of the metal pattern of the heat conducting portion,
An external electrode connected to the metal pattern and protruding from a bottom surface of the carrier.

Further, the invention according to claim 4 is a step of forming a through hole in a carrier, a step of forming a metal pattern on an upper surface of the carrier, and a step of forming a resin pattern on the upper surface of the metal pattern. An adhesive layer applying step of applying an adhesive layer, a conductive paste filling step of filling a conductive paste into the through holes formed in the through hole forming step, and a conductive paste filled by the conductive paste filling step. An external electrode forming step of reflowing and forming an external electrode, a through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern, and a plating process is performed on the through-hole formed by the through-hole forming step. Forming a heat conductive portion protruding from the surface of the carrier and the metal pattern, A chip mounting step of mounting the chip on the resin adhesive layer and bringing a chip electrode provided on the chip into contact with a portion of the heat conductive portion protruding from the metal pattern; and mounting the chip by the chip mounting step. A gang bonding step of heating the placed chip and gang bonding the chip.

The invention according to claim 5 is a method for forming a through hole in a carrier, forming a metal pattern on an upper surface of the carrier, and forming a resin pattern on the upper surface of the metal pattern. An adhesive layer applying step of applying an adhesive layer, a through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern, and performing a conductive plating process on the through-hole and the through-hole; A conductive plating step of forming a conductive plating portion on the outside, and forming an external electrode exposed from the bottom surface of the carrier in the through hole and a heat conductive portion protruding from the surface of the carrier and the metal pattern; Filling conductive paste on conductive plating part formed in through hole by plating process And an external electrode forming step of forming an external electrode by reflowing the conductive paste filled in the conductive paste filling step, and mounting the chip on the resin adhesive layer and providing the chip with the external electrode. A chip mounting step of bringing the chip electrode into contact with a portion of the heat conductive portion protruding from the metal pattern, and a gang bonding step of heating the chip mounted in the chip mounting step and gang bonding the chip. It is characterized by having.

The invention according to claim 6 is characterized in that the metal pattern formed on the upper surface of the carrier, the heat conductive portion connected to the metal pattern and protruding from the bottom surface of the carrier and the upper surface of the metal pattern; A resin adhesive layer applied to the upper surface of the metal pattern, a chip mounted on the resin adhesive layer, a chip electrode provided on the chip, and connected to the upper surface of the metal pattern of the heat conducting portion,
An external electrode connected to the metal pattern and exposed from a bottom surface of the carrier.

The invention according to claim 7 is a method for forming a through hole in a carrier, a step of forming a metal pattern on an upper surface of the carrier, and a step of forming a metal pattern on an upper surface of the carrier. An adhesive layer applying step of applying an adhesive layer; a through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern; and performing a conductive plating process on the through-hole and the through-hole, and forming a bottom surface of the carrier. A conductive plating step of forming an external electrode and a heat conductive portion protruding from the surface of the carrier and the metal pattern, and mounting a chip on the resin adhesive layer and forming a chip electrode provided on the chip. A chip mounting step of contacting the heat conductive portion with a portion protruding from the metal pattern, and the chip mounting step Heating the location chips, and having a gang bonding process the chips gang bonding.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention is characterized in that it is a ball grid type semiconductor device of a gang bonding type, in which a metal pattern for conducting a chip electrode and a solder ball portion is provided on a chip mounting surface of a carrier. The solder ball portion comes into contact with the metal pattern and the spherical portion protrudes from the mounting surface through the through hole provided in the carrier, and is filled in the through hole provided in the carrier immediately below the chip electrode, and the chip of the carrier is filled. The heat conductive portion is provided on the mounting surface in contact with the metal pattern, and on the other surface, a protrusion is formed.

The feature of the method for manufacturing a semiconductor device of the present invention is as follows.
A metal pattern is provided on the chip mounting surface of the carrier to conduct the chip electrodes and the solder balls, and the solder ball contacts the metal pattern and a spherical part protrudes from the mounting surface through the through hole provided in the carrier. A gang bonding method in which a through hole provided in a carrier below a chip electrode is filled, a heat conductive portion having a protruding portion formed on the other surface is provided in contact with a metal pattern on a chip mounting surface of the carrier. The present invention relates to a method of manufacturing a ball grid type semiconductor device, wherein gang bonding is performed at a time by applying heat and pressure to a protruding portion of a heat conducting portion to connect a chip electrode and a metal pattern.

In the present embodiment, since the metal pattern is formed on the chip mounting surface, the metal pattern and the carrier are not affected even if pressure is applied by a heat tool having no protruding portion on the heated portion of the solder ball forming surface. Will not give.

Further, the solder ball portion comes into contact with the metal pattern on the chip mounting surface and a spherical portion protrudes from the mounting surface through a through hole provided in the carrier.
Since the carrier functions as a solder resist, there is no need to provide a solder resist on the surface where the solder balls are formed.

Therefore, after the metal pattern and the heat conductive portion are provided on the carrier, a chip on which the chip electrode is formed is mounted on the metal pattern so that the chip electrode is mounted on the metal pattern. The gang bonding can be performed collectively by applying heat pressure by a heating tool having a flat heating unit.

Further, since the metal pattern is formed on the chip mounting surface, a protruding portion can be easily provided on the solder ball forming surface side of the heat conducting portion. Even when the electrode is slightly inclined, it is possible to suppress the bonding failure of the electrode pad due to the non-contact of the heated portion.

An embodiment of a semiconductor device and a method of manufacturing the same according to the present invention will be described below in detail with reference to the accompanying drawings.

As shown in FIG. 1, the semiconductor device of this embodiment has a carrier 1, a chip 2, a chip electrode 3, an adhesive layer 4, a metal pattern 5, a solder ball 6,
It consists of a heat conducting part 7 and a sealing resin 8.

The connection of the chip 2 uses gang bonding, and the chip electrode 3 made of Au bump provided on the chip 2 is directly connected to the metal pattern 5 provided on the carrier 1.

The surface of the metal pattern 5 which is in contact with the chip electrode 3 is provided with tin plating, and the chip electrode 3 and the metal pattern 5 are joined by the Au bump and tin.

The metal pattern 5 is provided on the chip mounting surface 9 of the carrier 1 via the adhesive layer 4 and the chip electrode 3 and the solder ball portion 6.
Are provided so as to conduct.

The solder ball portion 6 is in contact with the metal pattern 5 on the chip mounting surface 9 and has a shape in which a spherical portion 11 protrudes from the mounting surface through a through hole 10 provided in the carrier 1.

The heat conducting portion 7 is filled in a through hole 12 provided in the carrier 1 directly below the chip electrode 3, contacts the metal pattern 5 on the chip mounting surface 9 of the carrier 1, and contacts the solder ball forming surface 13. A projection 14 is formed.

The chip 2, the chip electrode 3, and the metal pattern 5 are sealed on the chip mounting surface 9 of the carrier 1 by the sealing resin 8.

The chip electrode 3 provided on the chip 2 comes into contact with the metal pattern 5, and the metal pattern 5 and the solder ball 6
Are in contact with each other, and conduction from the chip 2 to other devices has a ball grid type structure performed from the spherical portion 11 of the solder ball portion 6.

Next, a method of manufacturing the semiconductor device of this embodiment will be described.

FIG. 2 is a view showing the processing steps of the carrier 1 before the chip 2 is mounted. As shown in FIG. 2A, the carrier 1 using a polyimide film is prepared.
The adhesive layer 4 is formed on the chip mounting surface 9.

Although a polyimide film is used in the present embodiment, the present invention is not limited to this, and other insulating materials such as an insulating film and an insulating substrate may be used. May be used.

Next, as shown in FIG. 2B, the carrier 1 provided with the adhesive layer 4 is punched to punch out a through hole 10 for the solder ball portion 6 and a through hole 12 for the heat conducting portion 7. .

Next, as shown in FIG.
The copper foil 15 is laminated on the adhesive layer 4 formed in the above.

Next, as shown in FIG. 2D, the copper foil 15 is etched to form a metal pattern 5.

Next, as shown in FIG.
Plating is performed on the through hole 12 for use until the protrusion 14 is formed in the opening of the through hole 12 on the side of the solder ball forming surface 13 to form the heat conducting portion 7 and the metal pattern 5
Is subjected to tin plating to complete the patterning.

Next, as shown in FIG. 3, the chip 2 is mounted on the bonding stage 16 so that the surface of the chip 2 opposite to the surface on which the chip electrodes 3 are formed is in contact with the bonding stage 16, and the chip mounting of the carrier 1 is performed. The carrier 1 is mounted so that the chip electrode 3 contacts a predetermined portion of the metal pattern 5 formed on the surface 9.

Next, heat and pressure are applied to the heat conducting portion 7 by the heat tool 17 having a heating portion formed in a flat surface, thereby performing the collective bonding.

Next, as shown in FIG. 5, the chip 1, the chip electrode 2 and the metal pattern 5 are resin-sealed on the chip mounting surface 9 with the sealing resin 8.

In the present embodiment, the entire chip 2 is sealed, but it is not always necessary to cover the entire chip 2 and potting sealing called underfill may be performed.

In addition, a resin having an adhesive function with the chip 2 is coated in advance with an insulating adhesive on the metal pattern 5 and the carrier 1, and when the chip electrode 3 is bonded to the metal pattern, the chip 2 is simultaneously heated by heat. When the method of bonding the carrier 1 and the metal pattern 5 to each other is used, the manufacturing process can be shortened.

FIG. 6 is a view showing a process of forming the solder ball portion 6. As shown in FIG. 6A, a cream solder 18 is inserted into the through hole 10, and as shown in FIG. A solder ball portion 6 is formed by mounting a spherical solder 19 in the opening of the substrate 10 and performing reflow, and FIG.
Is completed.

When the metal pattern 5 is formed so as to cover the opening of the through hole 12 for the heat conducting portion 7 on the solder ball forming surface 13 side, the step of providing the projecting portion 14 of the heat conducting portion 7 on the solder ball forming surface 13 side is performed. In this embodiment, the metal pattern 5 is formed on the chip mounting surface 9, and the metal pattern 5 covers the opening of the through hole 12 for the heat conducting portion 7 on the chip mounting portion 8 side. 5 is used as a plating electrode and the through-hole 12 is partially copper-plated, so that the protruding portion 14 of the heat conducting portion 7 can be easily formed.

Next, a second embodiment of the present invention will be described with reference to FIGS.

FIG. 10 is a sectional view showing the structure of a land grid type semiconductor device according to the second embodiment of the present invention.

The semiconductor device according to the second embodiment includes:
As shown in FIG. 10, a metal pattern 105 is formed on the upper surface of carrier 106, and a heat conducting portion 107 is formed to penetrate carrier 106 and metal pattern 105. As shown in the figure, a part of the heat conducting portion 107 protrudes from the top surface of the metal pattern 105 and the bottom surface of the carrier 106, and is supplied from the bottom surface of the carrier 106 by a heat tool as described above. The heat acts to conduct the heat to the chip 100 mounting surface.

The surface of the portion of the heat conductive portion 107 protruding from the metal pattern 105 is plated with tin to achieve good contact with the chip electrode 101. The chip electrode 101 is formed by forming a gold plating layer on the surface of an aluminum pad with a barrier metal interposed therebetween. Further, the surface of the heat conducting portion may be made of gold and the chip electrode 101 may be made of aluminum.

Further, a conductive plating 109 such as tin plating is formed on the surface of the portion of the heat conductive portion 107 protruding from the bottom surface of the carrier 106.

An insulating adhesive 104 is applied to the upper surface of the metal pattern 105, and the chip 100 is mounted on the insulating adhesive 104. Note that the chip 100 may be configured to be mounted on a solder resist formed on the upper surface of the metal pattern 105.

The chip electrode 101 of the chip 100 mounted on the insulating adhesive 104 is connected to the heat conducting portion 107. A passivation film 103 and a polyimide film are provided on the chip 100 on the side where the chip electrodes 101 are formed, as needed, to protect the chip 100 from the insulating adhesive 104.

The carrier 106 has a metal pattern 105
Is provided on the bottom side of the carrier 106, and a conductive paste 108 such as a copper paste filled in the through holes serves as an external electrode. here,
This conductive paste is applied to the carrier 10 as shown in FIG.
6 protrudes from the bottom surface, and this protruding portion contributes to joining with the motherboard. It is preferable to form a conductive plating portion 109 made of tin plating or Ni / Au on the surface of the protruding portion for bonding with the motherboard.

The conductive paste 108 filled in the through-hole is in a state of being electrically connected to the metal pattern 105, and a space between the conductive paste 108 and the metal pattern 105 is provided as necessary. Then, a conductive plating portion 109 such as tin plating is formed.

With the above-described structure, the chip 100 is exposed to the outside except for the surface in contact with the insulating adhesive material 104, so that the heat radiation of the chip 100 is improved.

Further, as the insulating substrate 106, TAB
If a tape is used, the stress caused by the difference in thermal expansion coefficient between the chip 100 and the motherboard can be absorbed.

FIG. 11 is a sectional view showing the structure of a ball grid type semiconductor device according to the second embodiment of the present invention. In the semiconductor device shown in FIG. 10, the external electrodes of the semiconductor device shown in FIG. 10 are formed by solder balls to form a ball grid type.

This ball grid type semiconductor device is shown in FIG.
As shown in FIG. 1, a solder ball portion 110 is fused to a conductive paste 109. Other configurations are similar to those of the semiconductor device illustrated in FIG.

Next, a method of manufacturing the semiconductor device according to the second embodiment of the present invention will be described.

When manufacturing the semiconductor device according to the second embodiment of the present invention, first, a carrier using a polyimide film with an adhesive is punched to form a through hole.

Next, a copper foil is adhered to the upper surface of the carrier in which the through hole is formed, and the attached copper foil is etched to form a metal pattern 105.

Subsequently, a resin adhesive such as an elastomer is applied on the metal pattern 105 formed by the above etching and semi-cured to form an insulating adhesive 104 as shown in FIG. After that, the insulating adhesive 104
Then, punching is performed on the carrier on which the metal pattern 105 is formed to form a through hole for the heat conducting portion 107.

Next, a partial copper plating is applied to the through hole formed for the heat conducting portion 107, and the heat conducting portion 107 protruding from the upper surface of the metal pattern 105 and the bottom surface of the carrier 106 is formed.
To form

Next, a conductive paste such as a copper paste is filled into the through hole formed in the carrier 106 so as to slightly protrude from the through hole, and is cured after reflow.

Next, the upper surface of the metal pattern 105 of the heat conductive portion 107 formed as described above and the carrier 1
06 from the bottom surface and the carrier 106
The surface of the conductive paste protruding from the bottom surface is tin-plated.

Through the above steps, a land-shaped external electrode as shown in FIG. 10 is formed. The surface of the land-like external electrode may be plated with Ni / Au instead of the tin plating.

Next, the chip electrode 102 and the heat conducting portion 107
The chip 100 is placed on the insulating adhesive 1 while
04.

Thereafter, heat and pressure are applied to the heat conducting portion 107 with a heat tool having a heating portion formed in a plane, and the chip electrodes 101 are bonded together. At this time, if the heat conduction portion is plated with tin, a diamond heat tool can be used as the heat tool.

Finally, the insulating adhesive 104 applied on the upper surface of the metal pattern 105 is cured to obtain the semiconductor device shown in FIG.

In the case where solder balls are used for the external electrodes, after the insulating adhesive material 104 is cured, the solder balls are placed on the conductive paste to be filled in the through holes by using solder cream. Then, the solder cream and the solder ball are fused by reflow to form a solder ball portion 110 as shown in FIG.

In the above description, the through hole for forming the heat conducting portion 107 is formed by applying the insulating adhesive 104 on the metal pattern 105 and then performing punching. Punching may be performed before applying the conductive adhesive 104, and the liquid insulating adhesive 104 may be applied to the carrier in which the through-hole is formed.

In this case, after mounting the chip 100 on the insulating adhesive 104, the chip 100 is heated at 400 ° C.
Heating is performed to the vicinity, and the tin plating on the projecting portion of the heat conducting portion 107 is wetted by the tin plating applied to the surface of the chip electrode 101. At this time, since the wetting force of the tin plating exceeds the wetting force of the resin adhesive, the tin plating pushes out the resin adhesive remaining on the heat conductive part 107 and spreads on the surface of the protruding part of the heat conductive part 107. .

If the conductive plating portion 109 formed at the joint between the conductive paste 108 and the metal pattern 105 shown in FIGS. 10 and 11 is made of the same material as the heat conductive portion 107, the conductive plating The part and the heat conducting part 107 can be formed at the same time.

For example, when the heat conducting portion 107 is formed of copper, as shown in FIG. 12, copper is simultaneously formed in the through hole formed for the external electrode and the through hole formed for the heat conducting portion 107. Plating 111 is performed, and thereafter, tin plating 112 is performed on the copper plating 111 to form a conductive plating portion 109 in the through hole and a heat conductive portion 107 in the through hole.

FIG. 12 is a cross-sectional view showing a state in which a conductive plating portion 109 is formed in a through hole and a heat conductive portion 107 is formed in a through hole. At this time, since the plating amount applied to the through hole is equal to the plating amount applied to the through hole, the plating amount of the through hole and the through hole depends on the height at which the external electrode terminal and the heat conducting portion 107 are formed. Determine the aperture diameter.

Thereafter, a conductive paste 108 is filled from above the conductive plating portion 109 formed in the through hole to form an external electrode. At this time, this external electrode can be formed as shown in FIG.
The electrode becomes a land grid type electrode as shown in FIG. 0, and if solder balls are fused to the conductive paste 108 using cream solder, a ball grid type electrode as shown in FIG. 11 is obtained.

As shown in FIG. 12, the conductive plating portion 109 formed in the through hole can be used as it is as a land grid type external electrode terminal.
When a semiconductor device having such external electrode terminals is mounted on a motherboard, cream solder is applied to the motherboard side, and the cream solder and the external electrode terminals are aligned and reflowed.

[0076]

According to the present invention, since the metal pattern is formed on the chip mounting surface, the metal pattern and the carrier are affected even when heat is applied to the solder ball forming surface by a heat tool having a flat heating portion. Therefore, it is possible to perform gang bonding at once using a heat tool having a flat heating portion.

Further, since no solder resist is formed on the surface on which the solder ball is formed, gang bonding can be performed at a time using a heat tool having no projection.

Further, in the second embodiment of the present invention, since the chip is mounted on the insulating adhesive applied on the metal pattern, it is possible to obtain a semiconductor device having excellent heat dissipation in addition to the above effects. it can. Further, in the configuration using the insulating adhesive, a resin sealing step by potting or the like becomes unnecessary, so that the manufacturing process can be simplified.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a manufacturing process of the semiconductor device according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a manufacturing process of the semiconductor device according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a manufacturing process of the semiconductor device according to the embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a manufacturing step of the semiconductor device in the example of the present invention.

FIG. 6 is a cross-sectional view illustrating a manufacturing process of the semiconductor device according to the embodiment of the present invention.

FIG. 7 is a sectional view showing a manufacturing process of a conventional semiconductor device.

FIG. 8 is a sectional view showing a manufacturing process of a conventional semiconductor device.

FIG. 9 is a sectional view showing a conventional semiconductor device.

FIG. 10 is a sectional view showing a structure of a land grid type semiconductor device according to a second embodiment of the present invention.

FIG. 11 is a sectional view showing a structure of a ball grid type semiconductor device according to a second embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a structure and a manufacturing process of a semiconductor device according to a second embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Carrier, 2 ... Chip, 3 ... Chip electrode, 4 ... Adhesive layer, 5 ... Metal pattern, 6 ... Solder ball part, 7 ... Thermal conduction part, 8 ... Sealing resin, 9 ... Chip mounting surface, 10 ... Through Hole: 11: spherical portion, 12: through hole, 13: solder ball forming surface, 14: protrusion, 15: copper foil, 16: bonding stage, 17: heat tool, 18: solder cream, 19: spherical solder, 41 ... chips, 42 ... chip electrodes, 43 ... film carriers, 44 ... solder balls,
45: solder resist, 46: metal pattern, 47: sealing resin, 48: solder ball mounting surface, 49: through hole,
50: Chip mounting surface, 51: Filled metal part, 52: Capillary, 100: Chip, 101: Chip electrode, 102:
Barrier metal, 103 ... passivation film, 104 ...
Insulating adhesive, 105: metal pattern, 106: carrier, 107: heat conductive part, 108: conductive paste, 10
9: conductive plating portion, 110: solder ball portion, 111 ...
Copper plating, 112 ... tin plating.

Claims (7)

[Claims] 1. A ball grid type semiconductor device of a gang bonding system, wherein a metal pattern for electrically connecting a chip electrode and a solder ball portion is provided on a chip mounting surface of a carrier. The spherical part protrudes from the mounting surface through the through hole provided in the through hole, is filled in the through hole provided in the carrier immediately below the chip electrode, and contacts the metal pattern on the chip mounting surface of the carrier, and A semiconductor device, comprising: a heat conductive portion having a projection formed on a surface. 2. A metal pattern for electrically connecting a chip electrode and a solder ball portion is provided on a chip mounting surface of a carrier, and the solder ball portion contacts a metal pattern and passes through a through hole provided in the carrier to form a spherical surface on a mounting surface. It has a protruding part, is filled in a through hole provided in the carrier below the chip electrode, contacts the metal pattern on the chip mounting surface of the carrier, and has a heat conduction part with a protrusion formed on the other surface A method for manufacturing a ball grid type semiconductor device using a gang bonding method, wherein gang bonding is performed at a time by applying heat to a protruding portion of a heat conducting portion to connect a chip electrode to a metal pattern. Manufacturing method of a semiconductor device. 3. A metal pattern formed on an upper surface of the carrier, a heat conductive portion connected to the metal pattern and protruding from a bottom surface of the carrier and an upper surface of the metal pattern, and applied to an upper surface of the metal pattern. A resin adhesive layer, a chip mounted on the resin adhesive layer, a chip electrode provided on the chip and connected to an upper surface of the metal pattern of the heat conductive portion, and a carrier connected to the metal pattern, And an external electrode protruding from a bottom surface of the semiconductor device. 4. A through hole forming step for forming a through hole in the carrier, a metal pattern forming step for forming a metal pattern on the upper surface of the carrier, and an adhesive layer coating for applying a resin adhesive layer on the upper surface of the metal pattern. A conductive paste filling step of filling a conductive paste into the through holes formed in the through hole forming step; and reflowing the conductive paste filled in the conductive paste filling step to form external electrodes. An external electrode forming step, a through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern, and a plating process performed on the through-hole formed in the through-hole forming step, wherein a plating process is performed. Forming a heat conductive portion protruding from the surface; and forming a chip on the resin adhesive layer. And a chip mounting step of bringing a chip electrode provided on the chip into contact with a portion of the heat conductive portion protruding from the metal pattern, and heating the chip mounted in the chip mounting step. And a gang bonding step of gang bonding the chip. 5. A through hole forming step for forming a through hole in a carrier, a metal pattern forming step for forming a metal pattern on an upper surface of the carrier, and an adhesive layer coating for applying a resin adhesive layer on the upper surface of the metal pattern. A through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern; performing a conductive plating process on the through-hole and the through-hole to form a conductive plated portion in the through-hole. A conductive plating step of forming an external electrode exposed from the bottom surface of the carrier in the through hole and a heat conductive portion protruding from the surface of the carrier and the metal pattern; and forming the conductive electrode in the through hole by the conductive plating step. A conductive paste filling step of filling a conductive paste on the conductive plating portion, and the conductive paste A step of forming an external electrode by reflowing the conductive paste filled in the chip filling step, placing a chip on the resin adhesive layer, and contacting the chip electrode provided on the chip with the heat conduction. A chip mounting step of contacting a portion of the portion protruding from the metal pattern, and a gang bonding step of heating the chip mounted in the chip mounting step and gang bonding the chip. A method for manufacturing a semiconductor device. 6. A metal pattern formed on an upper surface of a carrier, a heat conductive portion connected to the metal pattern and protruding from a bottom surface of the carrier and an upper surface of the metal pattern, and applied to an upper surface of the metal pattern. A resin adhesive layer, a chip mounted on the resin adhesive layer, a chip electrode provided on the chip and connected to an upper surface of the metal pattern of the heat conductive portion, and a carrier connected to the metal pattern, And an external electrode exposed from the bottom surface of the semiconductor device. 7. A through-hole forming step of forming a through-hole in a carrier, a metal pattern forming step of forming a metal pattern on an upper surface of the carrier, and an adhesive layer coating applying a resin adhesive layer on an upper surface of the metal pattern. A through-hole forming step of forming a through-hole penetrating the carrier and the metal pattern; performing an electroplating process on the through-hole and the through-hole to expose an external electrode exposed from a bottom surface of the carrier and the carrier And a conductive plating step of forming a heat conductive portion protruding from the surface of the metal pattern, and mounting a chip on the resin adhesive layer, and connecting a chip electrode provided on the chip to the metal of the heat conductive portion. A chip mounting step of contacting a portion protruding from the pattern, and heating the chip mounted in the chip mounting step. And a gang bonding step of gang bonding the chip.