JP4212555B2 - 薄板製造方法、薄板製造装置および下地板 - Google Patents

薄板製造方法、薄板製造装置および下地板 Download PDF

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Publication number
JP4212555B2
JP4212555B2 JP2004517274A JP2004517274A JP4212555B2 JP 4212555 B2 JP4212555 B2 JP 4212555B2 JP 2004517274 A JP2004517274 A JP 2004517274A JP 2004517274 A JP2004517274 A JP 2004517274A JP 4212555 B2 JP4212555 B2 JP 4212555B2
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JP
Japan
Prior art keywords
base plate
thin plate
plate
manufacturing
base
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Expired - Fee Related
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JP2004517274A
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English (en)
Japanese (ja)
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JPWO2004003263A1 (ja
Inventor
修二 胡間
博純 五角
光三郎 矢野
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Sharp Corp
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Sharp Corp
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004517274A 2002-06-28 2003-06-25 薄板製造方法、薄板製造装置および下地板 Expired - Fee Related JP4212555B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002191158 2002-06-28
JP2002191158 2002-06-28
PCT/JP2003/008055 WO2004003263A1 (fr) 2002-06-28 2003-06-25 Procede de production de plaques minces, appareil de production de plaques minces et plaque de base

Publications (2)

Publication Number Publication Date
JPWO2004003263A1 JPWO2004003263A1 (ja) 2005-10-27
JP4212555B2 true JP4212555B2 (ja) 2009-01-21

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ID=29996912

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JP2004517274A Expired - Fee Related JP4212555B2 (ja) 2002-06-28 2003-06-25 薄板製造方法、薄板製造装置および下地板

Country Status (4)

Country Link
JP (1) JP4212555B2 (fr)
AU (1) AU2003244060A1 (fr)
TW (1) TWI279460B (fr)
WO (1) WO2004003263A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7747702B2 (en) 1998-09-22 2010-06-29 Avocent Huntsville Corporation System and method for accessing and operating personal computers remotely
US7818367B2 (en) 1995-08-25 2010-10-19 Avocent Redmond Corp. Computer interconnection system
USRE44814E1 (en) 1992-10-23 2014-03-18 Avocent Huntsville Corporation System and method for remote monitoring and operation of personal computers

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014001886A1 (fr) 2012-06-27 2014-01-03 Rgs Development B.V. Film de matériau semi-conducteur polycristallin, procédé de fabrication de celui-ci et moules d'orientation/surfusion pour celui-ci, et dispositif électronique
WO2014001888A1 (fr) 2012-06-27 2014-01-03 Rgs Development B.V. Film de matériau semi-conducteur polycristallin, procédé de fabrication de celui-ci et moules de surfusion pour celui-ci, et dispositif électronique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4121697B2 (ja) * 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
JP4451556B2 (ja) * 2000-09-08 2010-04-14 シャープ株式会社 シリコンリボン製造装置及びそれによるシリコンリボンを用いた太陽電池
JP4039057B2 (ja) * 2001-12-27 2008-01-30 神鋼電機株式会社 析出用基板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE44814E1 (en) 1992-10-23 2014-03-18 Avocent Huntsville Corporation System and method for remote monitoring and operation of personal computers
US7818367B2 (en) 1995-08-25 2010-10-19 Avocent Redmond Corp. Computer interconnection system
US7747702B2 (en) 1998-09-22 2010-06-29 Avocent Huntsville Corporation System and method for accessing and operating personal computers remotely

Also Published As

Publication number Publication date
WO2004003263A1 (fr) 2004-01-08
TWI279460B (en) 2007-04-21
TW200407468A (en) 2004-05-16
JPWO2004003263A1 (ja) 2005-10-27
AU2003244060A1 (en) 2004-01-19

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