JP4187021B2 - 記憶素子及びメモリ - Google Patents

記憶素子及びメモリ Download PDF

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Publication number
JP4187021B2
JP4187021B2 JP2006222046A JP2006222046A JP4187021B2 JP 4187021 B2 JP4187021 B2 JP 4187021B2 JP 2006222046 A JP2006222046 A JP 2006222046A JP 2006222046 A JP2006222046 A JP 2006222046A JP 4187021 B2 JP4187021 B2 JP 4187021B2
Authority
JP
Japan
Prior art keywords
layer
memory
memory element
magnetization
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006222046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007180487A (ja
Inventor
政功 細見
博司 鹿野
豊 肥後
和宏 別所
哲也 山元
広之 大森
一陽 山根
雄紀 大石
肇 山岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006222046A priority Critical patent/JP4187021B2/ja
Priority to TW095142260A priority patent/TW200735098A/zh
Priority to EP06024076A priority patent/EP1793385A1/en
Priority to US11/565,718 priority patent/US20070133264A1/en
Priority to KR1020060121278A priority patent/KR20070058364A/ko
Publication of JP2007180487A publication Critical patent/JP2007180487A/ja
Application granted granted Critical
Publication of JP4187021B2 publication Critical patent/JP4187021B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2006222046A 2005-12-02 2006-08-16 記憶素子及びメモリ Expired - Fee Related JP4187021B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006222046A JP4187021B2 (ja) 2005-12-02 2006-08-16 記憶素子及びメモリ
TW095142260A TW200735098A (en) 2005-12-02 2006-11-15 Memory element and memory
EP06024076A EP1793385A1 (en) 2005-12-02 2006-11-20 Spin transfer magnetic memory
US11/565,718 US20070133264A1 (en) 2005-12-02 2006-12-01 Storage element and memory
KR1020060121278A KR20070058364A (ko) 2005-12-02 2006-12-04 기억 소자 및 메모리

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005349790 2005-12-02
JP2006222046A JP4187021B2 (ja) 2005-12-02 2006-08-16 記憶素子及びメモリ

Publications (2)

Publication Number Publication Date
JP2007180487A JP2007180487A (ja) 2007-07-12
JP4187021B2 true JP4187021B2 (ja) 2008-11-26

Family

ID=37768675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006222046A Expired - Fee Related JP4187021B2 (ja) 2005-12-02 2006-08-16 記憶素子及びメモリ

Country Status (5)

Country Link
US (1) US20070133264A1 (enExample)
EP (1) EP1793385A1 (enExample)
JP (1) JP4187021B2 (enExample)
KR (1) KR20070058364A (enExample)
TW (1) TW200735098A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194210A (ja) * 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US8803266B2 (en) * 2010-12-07 2014-08-12 Samsung Electronics Co., Ltd. Storage nodes, magnetic memory devices, and methods of manufacturing the same
JP2012160681A (ja) * 2011-02-03 2012-08-23 Sony Corp 記憶素子、メモリ装置
TWI612698B (zh) 2013-10-09 2018-01-21 財團法人工業技術研究院 多位元儲存之非揮發性記憶體晶胞及非揮發性記憶體
US20160160553A1 (en) * 2014-12-04 2016-06-09 Ford Global Technologies, Llc Automatic dual electric motor tailgate lift system
FR3064395B1 (fr) * 2017-03-23 2021-12-10 Commissariat Energie Atomique Procede de formage d'une cellule memoire non volatile, cellule memoire non volatile formee suivant ce procede et dispositif microelectronique comportant des telles cellules memoire

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4462790B2 (ja) * 2001-09-04 2010-05-12 ソニー株式会社 磁気メモリ
DE60300157T2 (de) * 2002-03-29 2005-11-10 Kabushiki Kaisha Toshiba Magnetische Speichereinheit und magnetische Speichermatrix
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP2005064075A (ja) * 2003-08-20 2005-03-10 Toshiba Corp 磁気記憶装置及びその製造方法
JP2005093488A (ja) * 2003-09-12 2005-04-07 Sony Corp 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法
JP2006237329A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 磁気記憶装置及び磁気記憶装置の書き込み方法
US7345855B2 (en) * 2005-09-07 2008-03-18 International Business Machines Corporation Tunnel barriers based on rare earth element oxides

Also Published As

Publication number Publication date
KR20070058364A (ko) 2007-06-08
JP2007180487A (ja) 2007-07-12
TW200735098A (en) 2007-09-16
US20070133264A1 (en) 2007-06-14
TWI324770B (enExample) 2010-05-11
EP1793385A1 (en) 2007-06-06

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