JP4185514B2 - Atmospheric pressure plasma processing method and apparatus - Google Patents

Description

  The present invention relates to a so-called direct type atmospheric pressure plasma processing method and apparatus for performing surface treatment by arranging a substrate in a plasma discharge space near atmospheric pressure, and in particular, atmospheric pressure plasma for performing processing while relatively moving a processing unit and a substrate. The present invention relates to a processing method and apparatus.

The atmospheric pressure plasma processing method includes a so-called direct method in which the substrate is disposed directly in the plasma discharge space, and a so-called remote method in which the substrate is disposed outside the discharge space and the plasma gas generated in the discharge space is blown onto the substrate. It is divided roughly into. The direct atmospheric pressure plasma processing apparatus includes, for example, a processing unit including a high-voltage electrode and a stage serving also as a ground electrode. A substrate is disposed on the stage, and a processing path is formed between the processing unit and the substrate. A process gas is introduced into the processing path, and an electric field is applied to the high-voltage electrode to form an atmospheric pressure plasma discharge in the processing path. As a result, the process gas is turned into plasma and comes into contact with the surface of the substrate to cause a reaction, so that surface treatment such as water repellency treatment can be performed.
JP 2004-228136 A

  One of the processing unit and the substrate can be scanned to accommodate a large substrate. Currently, development is in progress to increase the scanning speed. On the other hand, when the scanning speed is increased, the external atmosphere is likely to be caught in the processing path between the processing unit and the substrate. In particular, the envelopment of the external atmosphere is significant at the downstream end of the processing path when the scanning direction of the processing unit with respect to the substrate matches the direction of the gas flow in the processing path. When such an external atmosphere is involved, for example, in water repellent treatment, the processing capability at the downstream end of the treatment passage is reduced by oxygen in the entrained atmosphere. On the other hand, there are some cases where the processing capability increases when a small amount of oxygen is mixed rather than zero, such as in a cleaning process.

The atmospheric pressure plasma processing method according to the present invention allows a process gas to pass through a processing path between a processing unit and a substrate while applying a voltage to the electrode while reciprocating a processing unit including the electrode relative to the substrate. To form a plasma discharge at approximately atmospheric pressure in the processing passage, and when performing the plasma surface treatment of the substrate,
The direction of the process gas flow in the processing path is switched according to the relative movement direction of the processing unit.

In a process (for example, a water repellent process) that should prevent the external atmosphere from being caught in the process passage, it is preferable to operate as follows.
When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing passage from the forward end of the processing passage. The introduction of the process gas from the end portion on the return direction side of the processing passage almost stops, preferably completely stops. As a result, the process gas flows from the forward end of the processing passage toward the backward end. When the relative movement direction of the processing unit is reversed from the forward direction to the backward direction, the main introduction position of the process gas is switched from the forward end to the backward end of the processing passage. When the processing unit relatively moves in the backward direction, the process gas is introduced into the processing passage from the end portion on the backward direction side of the processing passage. The introduction of the process gas from the forward end of the processing passage almost stops, preferably completely stops. As a result, the process gas flows from the backward end of the processing passage toward the forward end. When the relative movement direction of the processing unit is reversed from the backward direction to the forward direction, the main introduction position of the process gas is switched from the backward end portion to the forward end portion of the processing passage.

In a process (for example, a cleaning process) that should allow a slight entrainment in the processing path of the external atmosphere, it is preferable to operate as follows.
When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing passage from the end portion on the backward direction side of the processing passage. The introduction of the process gas from the forward end of the processing passage almost stops, preferably completely stops. As a result, the process gas flows from the backward end of the processing passage toward the forward end. When the relative movement direction of the processing unit is reversed from the forward direction to the backward direction, the main introduction position of the process gas is switched from the backward direction end to the forward direction end of the processing passage. Then, when the processing unit relatively moves in the backward direction, the process gas is introduced into the processing path from the end portion on the forward direction side of the processing path. The introduction of the process gas from the end portion on the return direction side of the processing passage almost stops, preferably completely stops. As a result, the process gas flows from the forward end of the processing passage toward the backward end. When the relative movement direction of the processing unit is reversed from the backward direction to the forward direction, the main introduction position of the process gas is switched from the forward end portion to the backward direction end portion of the processing passage.

Of the end portion on the forward direction side and the end portion on the return direction side of the processing passage, an end portion on the opposite side to the end portion serving as the process gas introduction position may be sucked and exhausted. In that case, the suction / exhaust position is preferably switched in parallel with the switching of the process gas introduction position.
For example, in a process (for example, a water repellent process) that should prevent the external atmosphere from being caught in the process passage, it is preferable to operate as follows.
When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing passage from the forward end portion of the processing passage and sucked and exhausted from the backward end portion of the processing passage. Suction exhaust from the end of the processing passage in the forward direction may be completely stopped, or a slight amount (a smaller amount than the suction exhaust on the backward direction) may be performed. Thereby, the process gas surely flows from the forward end portion of the processing passage toward the backward end portion. On the other hand, when the processing unit relatively moves in the backward direction, the process gas is introduced into the processing passage from the backward end portion of the processing passage, and the suction exhaust is discharged from the forward end portion of the processing passage. Do. Suction exhaust from the end portion on the backward direction side of the processing passage may be completely stopped, or a slight amount of suction exhaust (smaller than the suction exhaust on the forward direction side) may be performed. Thereby, the process gas surely flows from the end portion on the backward direction side to the end portion on the forward direction side of the processing passage.

In a process (for example, a cleaning process) that should allow a slight entrainment in the processing path of the external atmosphere, it is preferable to operate as follows.
When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing passage from the backward end portion of the processing passage and sucked and exhausted from the forward end portion of the processing passage. Suction exhaust from the end portion on the backward direction side of the processing passage may be completely stopped, or a slight amount of suction exhaust (smaller than the suction exhaust on the forward direction side) may be performed. Thereby, the process gas surely flows from the end portion on the backward direction side to the end portion on the forward direction side of the processing passage. On the other hand, when the processing unit relatively moves in the backward direction, the process gas is introduced into the processing passage from the end on the forward direction side of the processing passage, and suction exhaust is discharged from the end on the backward direction side of the processing passage. You should do it. Suction exhaust from the end of the processing passage in the forward direction may be completely stopped, or a slight amount (a smaller amount than the suction exhaust on the backward direction) may be performed. Thereby, the process gas surely flows from the forward end portion of the processing passage toward the backward end portion.

A gas curtain may be formed on the outside of the end portion which is the position where the process gas is introduced, out of the end portion on the forward direction side and the end portion on the return direction side of the processing passage. In that case, the main gas curtain formation position may be switched in parallel with the switching of the process gas introduction position.
For example, in a process (for example, a water repellent process) that should prevent the external atmosphere from being caught in the processing path, when the processing unit moves relative to the forward direction, the process gas is moved in the forward direction side of the processing path. And a gas curtain is formed outside the process gas introduction position in the forward direction, and when the processing unit relatively moves in the backward direction, the process gas is returned in the backward direction of the process passage. The gas curtain may be formed on the outer side in the backward direction from the process gas introduction position while being introduced into the processing passage from the end on the side.

In a process (for example, a cleaning process) that should allow a slight entrainment in the processing path in the external atmosphere, when the processing unit moves relative to the forward direction, process gas is discharged from the end of the processing path on the backward direction side. When the process unit is introduced into the processing passage and a gas curtain is formed outside the process gas introduction position in the backward direction, and the processing unit moves relative to the backward direction, the end portion of the processing passage in the forward direction is provided. In addition, the gas curtain may be formed on the outside in the forward direction from the process gas introduction position.
The switching of the process gas introduction position, the switching of the exhaust position, and the switching of the gas curtain forming position may be combined. Suction for sucking and exhausting the curtain gas may be performed at the end of the gas curtain forming side.

The present invention also provides a normal pressure plasma treatment in which a process gas flows through a processing path along the surface of the substrate and an electric field is applied to the processing path to form a plasma discharge at a substantially atmospheric pressure, thereby plasma-treating the surface of the substrate. A device,
A pair of introductions for introducing a process gas into the processing passages disposed at both ends of the processing passage, and a substrate facing surface defining the processing passage between the electrode for forming the plasma discharge and the substrate, respectively. A processing unit including a nozzle;
A moving mechanism for reciprocating the processing unit relative to the substrate in the direction of the processing path;
Introducing nozzle switching means for selectively connecting one of the pair of introducing nozzles to a process gas source in accordance with the moving direction of the moving mechanism;
It is provided with.

In a process (for example, a water repellent process) that should prevent the external atmosphere from being caught in the process passage, the introduction nozzle switching unit is configured to move the pair of introduction nozzles when the process unit moves in the forward direction. When the introduction nozzle at the end on the forward direction side of the processing passage is selected and connected to the process gas source, and the processing unit relatively moves in the backward direction, the restoration of the processing passage of the pair of introduction nozzles is performed. The introduction nozzle at the end on the direction side may be selected so as to be connected to the process gas source.
In a process (for example, a cleaning process) that should allow a slight entrainment in the processing path of the external atmosphere, the introduction nozzle switching unit is configured so that the processing unit moves relative to the forward direction. When an introduction nozzle at the end of the processing path on the return direction side is selected and connected to the process gas source, and the processing unit moves relative to the return direction, the forward direction side of the processing path among the pair of introduction nozzles It is preferable to select an introduction nozzle at the end of the nozzle and connect it to the process gas source.

A pair of exhaust nozzles are provided on both sides of the processing unit,
It is preferable that an exhaust nozzle switching unit that selects an exhaust nozzle opposite to the introduction nozzle selected according to the moving direction of the moving mechanism and continues to the exhaust device is provided.
In this case, the exhaust nozzle may be arranged outside the introduction nozzle or may be arranged inside the introduction nozzle. The exhaust nozzle on the side not selected by the exhaust nozzle switching means is preferably blocked from the exhaust device.

A pair of exhaust nozzles connected to an exhaust device are provided outside the pair of introduction nozzles of the processing unit, respectively.
The suction amount of the exhaust nozzle on the side opposite to the introduction nozzle selected according to the moving direction by the moving mechanism is relatively increased, and the suction amount of the exhaust nozzle on the same side as the selected introduction nozzle is relatively set An exhaust nozzle adjusting means for reducing the size may be provided.

A pair of curtain nozzles for forming a gas curtain is provided outside the pair of introduction nozzles of the processing unit, respectively.
It is preferable that a curtain nozzle switching unit that selects a curtain nozzle on the same side as the introduction nozzle selected according to the moving direction by the moving mechanism and continues to the curtain gas source is provided. The curtain nozzle on the side not selected by the curtain nozzle switching means is preferably cut off from the curtain gas source.

The present invention is particularly effective for atmospheric pressure plasma treatment in a pressure environment of substantially normal pressure (near atmospheric pressure). Here, “substantially normal pressure” refers to a range of 1.013 × 10 ^{4 to} 50.663 × 10 ⁴ Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 × 10 ⁴ to 10.664 × 10 ⁴ Pa is preferable, and 9.331 × 10 ^{4 to} 10.9797 × 10 ⁴ Pa is more preferable.

  According to the present invention, regardless of whether the processing unit moves in the forward direction or the backward direction relative to the base material, it is always possible to prevent or suppress entrainment of the external atmosphere in the processing passage, Entrainment can always be ensured, and the processing capability of atmospheric pressure plasma treatment can be ensured.

Embodiments of the present invention will be described below.
FIG. 1 shows a direct atmospheric pressure plasma processing apparatus M for water repellent treatment according to the first embodiment. The atmosphere around the atmospheric pressure plasma processing apparatus M is air.

The apparatus M includes a processing unit 11 and a stage 20. The processing unit 11 includes a unit main body 12 supported by an apparatus frame (not shown) and a high-voltage electrode 13 held by the unit main body 12.
A power source (not shown) is connected to the high voltage electrode 13.
A ceramic plate 14 as a solid dielectric layer is provided at the bottom of the processing unit 11.

A stage 20 is disposed below the processing unit 11. The stage 20 is made of metal and is electrically grounded to form a ground electrode.
A large-area substrate W such as liquid crystal glass to be processed is placed on the upper surface of the stage 20.
A processing path 16 is defined between the processing unit 11 and the substrate W on the stage 20. The bottom surface of the processing unit 11 (the lower surface of the ceramic plate 14) constitutes a substrate facing surface or a processing path defining surface.

The processing unit 11 is connected to the moving mechanism 19. The processing unit 11 is reciprocated in the left-right direction by the moving mechanism 19. For example, if the left direction is the forward direction, the right direction is the backward direction.
While the processing unit 11 is fixed, the stage 20 may be connected to a moving mechanism and reciprocated left and right.

  The atmospheric pressure plasma processing apparatus M is provided with a process gas supply system 30 and an exhaust system 40.

The process gas supply system 30 is configured as follows.
A common supply path 32 extends from the process gas source 31. The process gas source 31 mixes an appropriate amount of a fluorocarbon compound such as CF ₄ and nitrogen as a process gas for water repellent treatment, and sends the mixture to a common supply path 32. Two individual supply paths 34L and 34R are branched from the common supply path 32 via an electromagnetic three-way valve 33 (introduction nozzle switching means). The electromagnetic three-way valve 33 selectively connects one of the two individual supply paths 34L and 34R to the common supply path 32 and blocks the other individual supply path. As the introduction nozzle switching means, instead of the electromagnetic three-way valve 33, an electromagnetic opening / closing valve may be provided in each individual supply path 34L, 34R, and one of these electromagnetic opening / closing valves may be selectively opened and the other closed. .

  A gas introduction nozzle 35L is provided on the left side of the processing unit 11, and a gas introduction nozzle 35R is provided on the right side. An individual supply path 34L is connected to the gas introduction nozzle 35L on the left side. An individual supply path 34R is connected to the gas introduction nozzle 35R on the right side.

The exhaust system 40 is configured as follows.
An exhaust nozzle 45L is provided on the left outer side of the gas introduction nozzle 35L on the left side of the processing unit 11. An individual exhaust path 44L extends from the exhaust nozzle 45L. An exhaust nozzle 45R is provided on the right outer side of the gas introduction nozzle 35R on the right side of the processing unit 11. An individual exhaust path 44R extends from the exhaust nozzle 45R.

  The two individual exhaust paths 44L and 44R are connected to an electromagnetic three-way valve 43 (exhaust nozzle switching means). A common exhaust path 42 extends from the electromagnetic three-way valve 43, and an exhaust means 41 such as a suction pump is provided in the common exhaust path 42. It is connected. The electromagnetic three-way valve 43 selectively connects one of the two individual exhaust passages 44L and 44R to the common exhaust passage 42 and blocks the other individual exhaust passage. As an exhaust nozzle switching means, instead of the electromagnetic three-way valve 43, an electromagnetic opening / closing valve or an electromagnetic flow control valve is provided in each individual supply path 44L, 44R, and one of these electromagnetic valves is selectively opened and the other is closed. May be.

  In the above configuration, by supplying voltage from the power source to the high-voltage electrode 13, an intermediate portion of the processing path 16 (a portion between the high-voltage electrode 13 and the substrate W on the stage 20) becomes a plasma space 16a having a substantially atmospheric pressure. In parallel with the voltage supply, process gas is blown out from the process gas supply system 30 to the processing passage 16. This process gas is guided to the plasma space 16a and turned into plasma, and contacts with the substrate W to cause a reaction. As a result, the surface of the substrate W can be subjected to water repellency treatment. The treated gas and reaction by-products are exhausted from the exhaust system 40. At the same time, the processing unit 11 is reciprocated left and right, and the entire surface of the substrate W is subjected to water repellent treatment.

In the plasma processing, the electromagnetic three-way valves 33 and 43 and the moving mechanism 19 operate in cooperation. Thereby, the process gas is always introduced into the processing passage 16 from the front in the traveling direction of the processing unit 11. Details will be described below.
When the processing unit 11 moves leftward by the moving mechanism 19, the common supply path 32 and the individual supply path 34L are communicated by the electromagnetic three-way valve 33 of the process gas supply system 30, while the individual supply path 34R is shut off. . The common exhaust path 42 and the individual exhaust path 44R are communicated with each other by the electromagnetic three-way valve 43 of the exhaust system 40, while the individual exhaust path 44L is blocked.

  Thus, as shown in FIG. 2, when the processing unit 11 moves to the left, the process gas is blown out only from the left introduction nozzle 35L, flows in the processing passage 16 to the right, and the right exhaust nozzle 45R. It is sucked and exhausted from. At this time, since the right end portion of the processing passage 16 moves in a direction retreating with respect to the external atmosphere, the external atmosphere is hardly involved in the processing passage 16 from the right end portion of the processing passage 16. Further, at the left end portion of the processing passage 16, the entry of the external atmosphere into the processing passage 16 hardly occurs due to the curtain effect of the process gas.

  When the processing unit 11 reaches the limit position on the left side of the reciprocating movement range, the moving mechanism 19 reverses the moving direction of the processing unit 11 to the right. In cooperation with this, the electromagnetic three-way valve 33 of the process gas supply system 30 is switched to a state in which the common supply path 32 and the individual supply path 34R are communicated and the individual supply path 34L is shut off. Further, the electromagnetic three-way valve 43 of the exhaust system 40 switches to a position where the common exhaust passage 42 and the individual exhaust passage 44L are communicated and the individual exhaust passage 44R is blocked.

  Accordingly, as shown in FIG. 3, when the processing unit 11 moves to the right, the process gas is blown out only from the right introduction nozzle 35R, flows in the processing passage 16 to the left, and the left exhaust nozzle 45L. It is sucked and exhausted from. At this time, since the left end portion of the processing passage 16 moves in a direction retreating with respect to the external atmosphere, the external atmosphere is hardly involved in the processing passage 16 from the left end portion of the processing passage 16. Further, at the right end portion of the processing passage 16, the entry of the external atmosphere into the processing passage 16 hardly occurs due to the curtain effect of the process gas.

  When the processing unit 11 reaches the limit position on the right side of the reciprocating movement range, the moving mechanism 19 reverses the moving direction of the processing unit 11 to the left. In cooperation with this, the electromagnetic three-way valve 33 of the process gas supply system 30 switches the common supply path 32 and the individual supply path 34L to the communication state and shuts off the individual supply path 34R. Further, the electromagnetic three-way valve 43 of the exhaust system 40 switches to a position where the common exhaust path 42 and the individual exhaust path 44R are communicated and the individual exhaust path 44L is blocked.

  By the above operation, it is possible to always prevent the external atmosphere from entering the processing passage 16 regardless of whether the processing unit 11 moves leftward or rightward. As a result, it is possible to increase the moving speed, and hence the plasma processing speed, while sufficiently maintaining the processing capability of the atmospheric pressure plasma processing.

As shown in FIG. 2, when the process gas is blown from the left introduction nozzle 35L and sucked from the right exhaust nozzle 45R, a small amount of exhaust may be performed from the left nozzle 45L. (Virtual arrow line in FIG. 2). Accordingly, when a part of the process gas blown from the left introduction nozzle 35R is about to leak to the left outside, it can be exhausted from the exhaust nozzle 45L. Similarly, as shown in FIG. 3, when the process gas is blown out from the right introduction nozzle 35R and sucked from the left exhaust nozzle 45L, a small amount of exhaust may also be performed from the right exhaust nozzle 45R. (Virtual arrow line in FIG. 3). Accordingly, when a part of the process gas blown from the right introduction nozzle 35R is about to leak to the right outside, it can be exhausted from the right nozzle 45R. As a result, it is possible to reliably prevent the process gas from leaking outside.
In this case, instead of the exhaust nozzle switching means such as the electromagnetic three-way valve 43, the exhaust system 40 is provided with exhaust nozzle adjusting means such as an electromagnetic flow control valve in each individual exhaust passage 44L and 44R, and from each exhaust nozzle 45L and 45R. It is preferable that the amount of suction is adjustable.

Next, a second embodiment of the present invention will be described. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.
As shown in FIG. 4, a curtain gas supply system 50 is added to the apparatus M of the second embodiment. The curtain gas supply system 50 is configured as follows.
A common supply path 52 extends from the curtain gas source 51. Nitrogen is used as the curtain gas. Two individual supply paths 54L and 54R are branched from the common supply path 52 via an electromagnetic three-way valve 53 (curtain nozzle switching means). The electromagnetic three-way valve 53 selectively connects either one of the two individual supply paths 54L and 54R to the common supply path 52 and blocks the other individual supply path.

  As the curtain nozzle switching means, instead of the electromagnetic three-way valve 53, an electromagnetic on-off valve may be provided in each of the individual supply paths 54L, 54R, and one of these electromagnetic on-off valves may be selectively opened and the other closed. . Alternatively, an electromagnetic flow control valve is provided in each of the individual supply paths 54L and 54R, and either one of the electromagnetic flow control valves is selected and the opening thereof is relatively large, and the opening of the other electromagnetic flow control valve is relatively set. May be made small or completely closed.

A curtain nozzle 55L is provided on the left outer side of the left exhaust nozzle 45L of the processing unit 11. An individual supply path 54L is connected to the curtain nozzle 55L. A curtain nozzle 55R is provided on the right outer side of the right exhaust nozzle 45R of the processing unit 11. An individual supply path 54R is connected to the curtain nozzle 55R.
The curtain nozzle 55L may be provided between the exhaust nozzle 45L and the introduction nozzle 35L, and the curtain nozzle 55R may be provided between the exhaust nozzle 45R and the introduction nozzle 35R.

  In the exhaust system 40 of the second embodiment, instead of the electromagnetic three-way valve 43, an electromagnetic flow control valve 43L (exhaust nozzle adjusting means) is provided in the individual supply path 44L, and an electromagnetic flow control valve 43R (exhaust gas) is provided in the individual supply path 44R. Nozzle adjusting means) is provided.

According to the second embodiment, the electromagnetic valves 33, 43L, 43R, 53 and the moving mechanism 19 operate in cooperation during the plasma processing of the substrate W. Details will be described below.
When the processing unit 11 moves to the left by the moving mechanism 19, the common supply path 32 and the individual supply path 34L are communicated by the electromagnetic three-way valve 33 of the process gas supply system 30, and the individual supply path 34R is shut off. Further, the electromagnetic flow control valve 43R of the exhaust system 40 is opened by an opening degree corresponding to the process gas supply flow rate or more, and the electromagnetic flow control valve 43L is opened by an opening degree substantially corresponding to the curtain gas blowing flow rate described later. . Furthermore, the common supply path 52 and the individual supply path 54L are communicated by the electromagnetic three-way valve 53 of the curtain gas supply system 50, and the individual supply path 54R is shut off.

  As a result, as shown in FIG. 5, when the processing unit 11 moves to the left, the process gas is blown out from the left introduction nozzle 35L, flows in the processing passage 16 to the right, and from the right exhaust nozzle 45R. Suction exhausted. In addition, nitrogen gas is blown out from the left curtain nozzle 55 </ b> L, and a nitrogen gas curtain is formed outside the left end portion of the processing passage 16. This nitrogen gas curtain can isolate the external atmosphere and the left end portion of the processing passage 16, and can reliably prevent the external atmosphere from entering the processing passage 16 from the left end portion of the processing passage 16. The curtain gas can be sucked and exhausted from the exhaust nozzle 45L.

  When the processing unit 11 moves rightward by the moving mechanism 19, the common supply path 32 and the individual supply path 34R are communicated by the electromagnetic three-way valve 33 of the process gas supply system 30, and the individual supply path 34L is shut off. Further, the electromagnetic flow control valve 43L of the exhaust system 40 is opened by an opening corresponding to the process gas supply flow rate or more, and the electromagnetic flow control valve 43R is opened by an opening substantially corresponding to the curtain gas blowing flow described later. . Furthermore, the common supply path 52 and the individual supply path 54R are communicated with each other by the electromagnetic three-way valve 53 of the curtain gas supply system 50, and the individual supply path 54L is shut off.

Accordingly, as shown in FIG. 6, when the processing unit 11 moves to the right, the process gas is blown out from the right introduction nozzle 35R, flows in the processing passage 16 to the left, and from the left exhaust nozzle 45L. Suction exhausted. In addition, nitrogen gas is blown out from the right curtain nozzle 55 </ b> R, and a nitrogen gas curtain is formed outside the right end portion of the processing passage 16. This nitrogen gas curtain can isolate the external atmosphere from the right end portion of the processing passage 16 and reliably prevent the external atmosphere from entering the processing passage 16 from the right end portion of the processing passage 16. The curtain gas can be sucked and exhausted from the exhaust nozzle 45R.
As a result, the processing capability of the atmospheric pressure plasma processing can be ensured more reliably.

The present invention is not limited to the above embodiment, and various modifications can be made.
For example, when the processing capability is improved when a trace amount of oxygen is mixed from zero as in the case of cleaning processing, the movement direction of the processing unit 11 by the moving mechanism 19 and the cooperative operation of each electromagnetic valve are controlled by the above water repellent properties. Contrary to the embodiment for conversion, the process gas may always be introduced into the processing passage 16 from the rear in the traveling direction of the processing unit 11 and exhausted from the front in the traveling direction.

  The present invention is applicable, for example, to a process of making a substrate such as liquid crystal glass water repellent or cleaning.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front explanatory view showing a schematic configuration of a direct atmospheric pressure plasma processing apparatus for water repellency treatment according to a first embodiment of the present invention. It is front explanatory drawing which shows the state of a gas flow when the processing unit of the said 1st Embodiment is moving to the left with respect to a board | substrate. It is front explanatory drawing which shows the state of a gas flow when the processing unit of the said 1st Embodiment is moving rightward with respect to a board | substrate. It is front explanatory drawing which shows schematic structure of the direct type normal pressure plasma processing apparatus for water-repellent treatment which concerns on 2nd Embodiment of this invention. It is front explanatory drawing which shows the state of the gas flow when the processing unit of the said 2nd Embodiment is moving to the left with respect to a board | substrate. It is front explanatory drawing which shows the state of a gas flow when the processing unit of the said 2nd Embodiment is moving rightward with respect to a board | substrate.

Explanation of symbols

M atmospheric pressure plasma processing apparatus W substrate 11 processing unit 12 unit main body 13 high voltage electrode 14 ceramic plate 16 processing passage 16a plasma space 19 moving mechanism 20 stage 30 process gas supply system 31 process gas source 32 common supply passage 33 electromagnetic three-way valve (introduction) Nozzle switching means)
34L Individual supply path 34R Individual supply path 35L Gas introduction nozzle 35R Gas introduction nozzle 40 Exhaust system 41 Exhaust means 42 Common exhaust path 43 Electromagnetic three-way valve (exhaust nozzle switching means)
43L electromagnetic flow control valve (exhaust nozzle adjustment means)
43R Electromagnetic flow control valve (exhaust nozzle adjustment means)
44L Individual exhaust passage 44R Individual exhaust passage 45L Exhaust nozzle 45R Exhaust nozzle 50 Curtain gas supply system 51 Curtain gas source 52 Common supply passage 53 Electromagnetic three-way valve (curtain nozzle switching means)
54L Individual supply path 54R Individual supply path 55L Curtain nozzle 55R Curtain nozzle

Claims (9)

While the processing unit including the electrode is reciprocally moved relative to the substrate, a process gas is passed through the processing path between the processing unit and the substrate, and a plasma at a substantially atmospheric pressure is generated in the processing path by applying a voltage to the electrode. When forming the discharge and performing the plasma surface treatment of the substrate,
A normal pressure plasma processing method, wherein the direction of the process gas flow in the processing passage is switched according to the relative movement direction of the processing unit. When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing path from the forward end of the processing path,
2. The atmospheric pressure plasma processing method according to claim 1, wherein when the processing unit relatively moves in the backward direction, a process gas is introduced into the processing passage from an end portion on the backward direction side of the processing passage. When the processing unit relatively moves in the forward direction, the process gas is introduced into the processing path from the end of the processing path on the forward direction side and suctioned and exhausted from the end on the backward direction side of the processing path,
When the processing unit relatively moves in the backward direction, the process gas is introduced into the processing passage from the backward end portion of the processing passage and suctioned and exhausted from the forward end portion of the processing passage. The atmospheric pressure plasma processing method according to claim 1. When the processing unit relatively moves in the forward direction, a process gas is introduced into the processing path from the forward end of the processing path, and a gas curtain is formed outside the process gas introduction position in the forward direction. ,
When the processing unit relatively moves in the backward direction, the process gas is introduced into the processing passage from the backward end of the processing passage, and a gas curtain is formed outside the process gas introduction position in the backward direction. The atmospheric pressure plasma processing method according to claim 1. An atmospheric pressure plasma processing apparatus for flowing a process gas along a processing path along a surface of a substrate and applying an electric field to the processing path to form a plasma discharge at a substantially atmospheric pressure, and plasma processing the surface of the substrate,
A pair of introductions for introducing a process gas into the processing passages disposed at both ends of the processing passage, and a substrate facing surface defining the processing passage between the electrode for forming the plasma discharge and the substrate, respectively. A processing unit including a nozzle;
A moving mechanism for reciprocating the processing unit relative to the substrate in the direction of the processing path;
Introducing nozzle switching means for selectively connecting one of the pair of introducing nozzles to a process gas source in accordance with the moving direction of the moving mechanism;
An atmospheric pressure plasma processing apparatus comprising:   The introduction nozzle switching means, when the processing unit relatively moves in the forward direction, selects the introduction nozzle at the end on the forward direction side of the processing path from the pair of introduction nozzles, and connects to the process gas source, 6. When the processing unit relatively moves in the backward direction, an introduction nozzle at an end portion on the backward direction side of the processing passage is selected from the pair of introduction nozzles and is connected to a process gas source. The atmospheric pressure plasma processing apparatus according to 1. A pair of exhaust nozzles are provided on both sides of the processing unit,
The exhaust nozzle switching means which selects the exhaust nozzle on the opposite side to the introduction nozzle selected according to the moving direction by the said moving mechanism, and continues to an exhaust apparatus is provided. Atmospheric pressure plasma processing equipment. A pair of exhaust nozzles connected to an exhaust device are provided outside the pair of introduction nozzles of the processing unit, respectively.
The suction amount of the exhaust nozzle on the side opposite to the introduction nozzle selected according to the moving direction by the moving mechanism is relatively increased, and the suction amount of the exhaust nozzle on the same side as the selected introduction nozzle is relatively set 7. The atmospheric pressure plasma processing apparatus according to claim 5, further comprising exhaust nozzle adjusting means for reducing the size. A pair of curtain nozzles for forming a gas curtain is provided outside the pair of introduction nozzles of the processing unit, respectively.
The curtain nozzle switching means for selecting the curtain nozzle on the same side as the introduction nozzle selected according to the moving direction by the moving mechanism and connecting to the curtain gas source is provided. The atmospheric pressure plasma processing apparatus according to 1.

Images