JP4183200B2 - 薄膜コンデンサの製造方法 - Google Patents
薄膜コンデンサの製造方法 Download PDFInfo
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- JP4183200B2 JP4183200B2 JP2007008452A JP2007008452A JP4183200B2 JP 4183200 B2 JP4183200 B2 JP 4183200B2 JP 2007008452 A JP2007008452 A JP 2007008452A JP 2007008452 A JP2007008452 A JP 2007008452A JP 4183200 B2 JP4183200 B2 JP 4183200B2
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- Prior art keywords
- electrode layer
- layer
- thin film
- upper electrode
- dielectric layer
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Description
2・・・下部電極層
3・・・薄膜誘電体層
4・・・上部電極層
5・・・絶縁層
6・・・上部引出し電極
Claims (2)
- 下部電極層、薄膜誘電体層、上部電極層を支持基板全面に形成した後、前記上部電極層上に所定形状のレジスト層を形成し、同一レジスト層を用いて、前記上部電極層、前記薄膜誘電体層の一部を順次エッチングを行なうことで前記薄膜誘電体層、前記上部電極層を平面積および形状の等しいものに形成する薄膜コンデンサの製造方法であって、
前記上部電極層の最上面はAuであり、
前記下部電極層、前記薄膜誘電体層、前記上部電極層を形成した後に、前記支持基板全面にSiO x またはSiN x からなる絶縁層をスパッタで成膜する工程1と、
前記上部電極層上の前記絶縁層とその周囲の前記絶縁層とが分断される時点まで前記支持基板の垂直方向にドライエッチングを行なう工程2と、
前記上部電極層上の前記絶縁層を除去する工程3と、を有することを特徴とする薄膜コンデンサの製造方法。 - 前記工程2における前記ドライエッチングを、前記上部電極層よりも大きな窓を有するレジスト膜を用いて行なうことを特徴とする請求項1に記載の薄膜コンデンサの製造方法。
Priority Applications (1)
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JP2007008452A JP4183200B2 (ja) | 2007-01-17 | 2007-01-17 | 薄膜コンデンサの製造方法 |
Applications Claiming Priority (1)
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JP2007008452A JP4183200B2 (ja) | 2007-01-17 | 2007-01-17 | 薄膜コンデンサの製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2001395376A Division JP3996765B2 (ja) | 2001-12-26 | 2001-12-26 | 薄膜コンデンサの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007103972A JP2007103972A (ja) | 2007-04-19 |
JP4183200B2 true JP4183200B2 (ja) | 2008-11-19 |
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JP2007008452A Expired - Fee Related JP4183200B2 (ja) | 2007-01-17 | 2007-01-17 | 薄膜コンデンサの製造方法 |
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JP (1) | JP4183200B2 (ja) |
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2007
- 2007-01-17 JP JP2007008452A patent/JP4183200B2/ja not_active Expired - Fee Related
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JP2007103972A (ja) | 2007-04-19 |
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