JP4178638B2 - 固体撮像素子及びその駆動方法 - Google Patents

固体撮像素子及びその駆動方法 Download PDF

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Publication number
JP4178638B2
JP4178638B2 JP37084298A JP37084298A JP4178638B2 JP 4178638 B2 JP4178638 B2 JP 4178638B2 JP 37084298 A JP37084298 A JP 37084298A JP 37084298 A JP37084298 A JP 37084298A JP 4178638 B2 JP4178638 B2 JP 4178638B2
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JP
Japan
Prior art keywords
readout
pixel
read
pulse
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP37084298A
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English (en)
Japanese (ja)
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JP2000196964A5 (cg-RX-API-DMAC7.html
JP2000196964A (ja
Inventor
進次 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP37084298A priority Critical patent/JP4178638B2/ja
Priority to US09/467,880 priority patent/US6833872B1/en
Priority to DE69941144T priority patent/DE69941144D1/de
Priority to EP99125823A priority patent/EP1014700B1/en
Priority to KR1019990061532A priority patent/KR100763085B1/ko
Publication of JP2000196964A publication Critical patent/JP2000196964A/ja
Publication of JP2000196964A5 publication Critical patent/JP2000196964A5/ja
Application granted granted Critical
Publication of JP4178638B2 publication Critical patent/JP4178638B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP37084298A 1998-12-25 1998-12-25 固体撮像素子及びその駆動方法 Expired - Fee Related JP4178638B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP37084298A JP4178638B2 (ja) 1998-12-25 1998-12-25 固体撮像素子及びその駆動方法
US09/467,880 US6833872B1 (en) 1998-12-25 1999-12-21 Solid-state image sensor and method of driving same
DE69941144T DE69941144D1 (de) 1998-12-25 1999-12-23 Steuerverfahren einer Festkörper-Bildaufnahmevorrichtung
EP99125823A EP1014700B1 (en) 1998-12-25 1999-12-23 Method of driving a solid-state image sensor
KR1019990061532A KR100763085B1 (ko) 1998-12-25 1999-12-24 고체 촬상 센서 및 그 구동 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37084298A JP4178638B2 (ja) 1998-12-25 1998-12-25 固体撮像素子及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2000196964A JP2000196964A (ja) 2000-07-14
JP2000196964A5 JP2000196964A5 (cg-RX-API-DMAC7.html) 2005-10-27
JP4178638B2 true JP4178638B2 (ja) 2008-11-12

Family

ID=18497697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37084298A Expired - Fee Related JP4178638B2 (ja) 1998-12-25 1998-12-25 固体撮像素子及びその駆動方法

Country Status (5)

Country Link
US (1) US6833872B1 (cg-RX-API-DMAC7.html)
EP (1) EP1014700B1 (cg-RX-API-DMAC7.html)
JP (1) JP4178638B2 (cg-RX-API-DMAC7.html)
KR (1) KR100763085B1 (cg-RX-API-DMAC7.html)
DE (1) DE69941144D1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3607866B2 (ja) * 2000-12-12 2005-01-05 オリンパス株式会社 撮像装置
JP4725049B2 (ja) 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
KR101112554B1 (ko) * 2005-04-11 2012-02-15 삼성전자주식회사 표시 장치의 구동 장치 및 이를 포함하는 표시 장치
JP7072362B2 (ja) * 2017-09-26 2022-05-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2517544B2 (ja) 1985-07-08 1996-07-24 キヤノン株式会社 撮像装置
JP2853216B2 (ja) * 1989-11-09 1999-02-03 日本電気株式会社 固体撮像装置
US5235198A (en) 1989-11-29 1993-08-10 Eastman Kodak Company Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5051832A (en) 1990-02-12 1991-09-24 Eastman Kodak Company Selective operation in interlaced and non-interlaced modes of interline transfer CCD image sensing device
JPH06165046A (ja) * 1992-11-20 1994-06-10 Matsushita Electron Corp 固体撮像装置の駆動方法
EP0869665B1 (en) 1992-11-20 2001-08-16 Matsushita Electronics Corporation Solid state image sensor
JP2776292B2 (ja) * 1995-03-10 1998-07-16 日本電気株式会社 固体撮像装置
KR0165338B1 (ko) * 1995-12-30 1998-12-15 김광호 Ccd형 고체촬영소자, 이를 제조하는 방법 및 이를 구동하는 방법
DE69718694T2 (de) 1996-03-06 2003-10-16 Sony Corp., Tokio/Tokyo Elektronische Standbildkamera
EP0892989A1 (en) 1996-04-12 1999-01-27 Polaroid Corporation High-definition television progressive-scan broadcast camera
TW364265B (en) * 1997-01-31 1999-07-11 Sanyo Electric Co Solid image sensor device

Also Published As

Publication number Publication date
DE69941144D1 (de) 2009-09-03
EP1014700A3 (en) 2004-04-28
EP1014700A2 (en) 2000-06-28
EP1014700B1 (en) 2009-07-22
US6833872B1 (en) 2004-12-21
JP2000196964A (ja) 2000-07-14
KR20000048380A (ko) 2000-07-25
KR100763085B1 (ko) 2007-10-04

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