JP4171037B2 - Inkjet printing nozzle device - Google Patents

Abstract

An ink jet printing nozzle apparatus comprising: a nozzle chamber in fluid communication with an ink chamber and utilized for the storage of ink to be printed out by said nozzle apparatus, said nozzle chamber having a nozzle chamber outlet hole for the ejection of ink from said nozzle chamber; a magnetic piston located over an aperture in said nozzle chamber; and an activation coil located adjacent to said magnetic piston, said coil upon activation by a current applying a force to said piston sufficient to cause movement of said piston from a first position to a second position, said movement causing ink within said nozzle chamber to be ejected from said nozzle chamber through a nozzle chamber outlet hole onto print media. <IMAGE>

Description

Detailed Description of the Invention

    The present invention relates to the field of ink jet printing systems.

(Conventional technology)
Various printing methods have been invented in the past, and many of these methods are currently used. Known printing forms include various methods for displaying on a print medium using an associated display medium. Commonly used printing forms include offset printing, laser printing, copiers, dot matrix impact printers, thermal paper printers, film recorders, thermal transfer printers, and dripping types on demand and continuous outflow types. There are sublimation printers and inkjet printers. Each type of printer has its advantages and problems when considering cost, speed, quality, reliability, configuration, and ease of operation.

    In recent years, the ink-jet printing field, in which each ink pixel is drawn from one or more ink nozzles, is becoming increasingly popular due to its low cost and wide application.

    Various ink jet printing techniques have been invented. References to get an overview of this area are the output of the hard copy machine (editors: R Dubeck and S Sherr) (1988), pages 207-220, J Moore, “Non-impact printer: "Introduction and historical perspective".

    There are various types of inkjet printers themselves. The use of continuous ink spills in inkjet printing appears to date back to at least 1929. This is U.S. Pat. No. 194001 by Hansell, which discloses a simple form of flowing ink continuously in electrostatic inkjet printing.

    US Pat. No. 3,596,275 to Sweet also discloses a process for continuous ink jet printing that includes the step of separating ink drops by adjusting the flow of ink with a high frequency electrostatic field. This technique is still used by several manufacturers, including Elmjet and Scitex (see also US Pat. No. 3,373,437 to Sweet et al.).

    Piezoelectric ink jet printers are another form of commonly used ink jet devices. As a piezoelectric system, US Pat. No. 3,946,398 (1970) by Kyser et al. Using a diaphragm system, US Pat. No. 3,683,212 (1970) by Zolten using a piezoelectric crystal squeeze system, a piezoelectric bend U.S. Pat. No. 3,747,120 (1972) by Stemme, U.S. Pat. No. 4,459,601 by Hawkins, which disclosed a piezoelectric push method for ink flow, and U.S. Pat. Can be mentioned.

    Recently, thermal ink jet printing has become a very common form of ink jet printing. Ink-jet printing techniques include British Patent No. 200700712 (1979) by Endo et al., US Pat. No. 4,490,728 by Vaught et al. In the documents disclosing the above two ink jet printing technologies, an electrothermal actuator is used, and bubbles are created in a compressed space such as a nozzle, thereby opening an opening connecting the ink to the closed space. Through the associated print medium. Printing devices that use electrothermal actuators are manufactured by manufacturers such as Canon and Hewlett-Packard.

    As can be seen from the above description, various types of printing techniques can be used. In lust, printing technology should have many desirable characteristics. These desirable characteristics include an inexpensive configuration, high speed, safe operation, and long-term continuous operation. Each technology has its own advantages and disadvantages in terms of cost, speed, quality, reliability, power usage, ease of construction and operation, durability, and consumption.

    Various ink jet printing mechanisms are known. Unfortunately, inkjet heads are extremely difficult to manufacture with mass production technology. For example, the opening and the nozzle plate are formed separately from the ink supply unit and the ink ejection mechanism, and then adhered to the mechanism (Hewlett-Packard Journal Vol. 36, No. 5, pages 33-37 (1985)). . The material separation process required for this type of precision machine is substantially expensive to manufacture.

    In addition, side-fired inkjet technology (US Pat. No. 4,899,181) is often used, but this also limits the amount of processing that can be mass produced, no matter how special the capital investment.

    In addition, more esoteric techniques are often used. These techniques include nickel phase electroforming (Hewlett Packard Journal, Vol. 36, 5, 33-37 (1985)), electrical discharge machining, laser ablation (US Pat. No. 5,208,604), Micro punching is included.

    The use of the above technique substantially increases the cost of mass-producing inkjet printheads, thereby substantially increasing the final cost.

    Therefore, development of an effective system capable of mass-producing inkjet print heads is desired.

SUMMARY OF THE INVENTION The present invention is directed to providing an ink jet printing mechanism having a series of driven ink discharge nozzles. The nozzle has an internal selection actuator mechanism that is driven on the nozzle on a nozzle base by placing an electric field around the nozzle.

    In accordance with an aspect of the present invention, an inkjet print nozzle device is formed from a soft magnetic material, which is positioned between a nozzle chamber having an ink discharge hole at one end, an ink chamber for supplying ink to the nozzle chamber, and the nozzle chamber. And an electric coil provided proximate to the plunger and electrically connected to the nozzle drive signal. During driving, the plunger is moved from the ink introduction position to the ink discharge position, and ink can be discharged from the ink chamber through the discharge hole.

    Further, the ink discharge nozzle has an armature plate constructed from a soft magnetic material, and the plunger is attracted to the armature plate when the coil is driven. The cavity defined by the plunger in which the electrical coil is located reduces its size as the plunger moves, and the plunger further comprises a series of fluid flow slots that fluidly connect the cavity and the ink chamber, , Fluid can escape under pressure in the formed cavity. Preferably, the ink jet printing nozzle has elastic means that assists in returning the plunger from the ink discharge position to the ink filling position after discharging the ink from the ink discharge hole. Advantageously, the resilient means is a torsion spring that is precisely constructed to have substantially the same peripheral shape as the plunger.

    Another aspect of the present invention is to provide an ink jet print nozzle device constructed in accordance with the foregoing aspects of the present invention. The plunger of the device is formed with a series of slots along one surface. This surface forms an internal radial surface that defines a cavity between the plunger and the electrical coil. Furthermore, no fluid flow slot is formed on the upper surface of the plunger defining the upper wall of the formed cavity. When the cavity size is reduced due to the downward movement of the plunger caused by the electric coil, the ink flows from the slot into the nozzle chamber and acts to help discharge the ink from the ink discharge hole. Preferably, the slot has a substantially uniform cross-sectional shape.

    Another aspect of the present invention is to provide a nozzle chamber having an ink discharge hole on one wall of the chamber, an ink supply, and an inkjet nozzle having an electrostatic electrode. The ink source is connected to the nozzle chamber, and the electrostatic electrode is a first movable electrode formed in the bottom surface of the nozzle chamber and a movable second electrode disposed on the upper surface of the planar electrode. It has a planar electrode. When a potential difference is formed between the electrodes, the second planar electrode can move to a pre-emission position close to the first planar electrode, thereby deforming the waveform peripheral portion of the second electrode and reducing the potential difference. When decreased, the corrugated portion returns to its rest position and ink is ejected from the nozzle chamber.

    Another aspect of the present invention includes a nozzle chamber having an ink discharge hole on one wall of the chamber, an ink supply connected to the nozzle chamber, and an electrostatic actuator for discharging ink from the nozzle chamber through the ink discharge hole. An inkjet nozzle is provided. The electrostatic actuator has a first planar electrode formed in the bottom surface of the nozzle chamber and a movable second planar electrode disposed on top of the planar electrode. The ink nozzle device is formed by placing material on a single monolithic wafer and etching it. Furthermore, there is an air gap between the first and second planar electrodes, which is connected to the external atmosphere at the side of the nozzle chamber and through which air enters and exits as the actuator moves. Preferably, the surface of the electrode facing and facing the electrode is coated with a material having a low coefficient of friction to reduce the possibility of adsorption. This material is preferably composed substantially of polytetrafluoroethylene. The second planar electrode preferably includes a layer of rigid material substantially composed of nitride in order to maintain the hardness of the second planar electrode. The air gap between the first and second planar electrode structures is formed by using a sacrificial material and etching away the sacrificial material leaving the second planar electrode.

    In addition, the outer wall surface of the ink chamber is provided with a plurality of etching holes so that the sacrificial layer can be etched away faster during construction.

  Another aspect of the present invention is to provide a nozzle chamber having a discharge hole in one wall of the chamber, an ink supply interconnected with the nozzle chamber, an electrostatic actuator, and a method of constructing a potential difference. The electrostatic actuator has a series of conductive plates sandwiched in parallel with a resilient compressible material to eject ink from the nozzle chamber through the ejection holes. A potential difference is created to draw the adjacent plate to the other, providing elasticity to the compressible material, and further reducing the potential difference returns the compressible material to a rest position. As a result, ink is discharged from the discharge hole. As a result of the elasticity of the compressible material, ink is drawn into the nozzle chamber by surface tension around the ink discharge holes.

    Another aspect of the present invention is to provide an ink nozzle comprising a nozzle chamber having a discharge hole in one wall of the chamber, an ink supply interconnected with the nozzle chamber, an electrostatic actuator, and a step of discharging ink. . The electrostatic actuator has a series of conductive plates sandwiched in parallel by a resilient compressible material to eject ink from the nozzle chamber through a discharge hole. The method includes the steps of creating a potential difference between the conductive plates, pulling adjacent plates together, thereby elastically deforming the compressible material, and further reducing the potential difference to return the compressible material to a rest position. Have. As a result, ink is discharged from the discharge hole. As a result of the elastic deformation of the compressible material, ink is drawn into the nozzle chamber by surface tension around the ink discharge holes.

    The second aspect of the present invention provides a potential difference between a nozzle chamber having a discharge hole on one wall of the chamber, an ink supply source interconnected with the nozzle chamber, an inkjet nozzle having an electrostatic actuator, and a conductive plate, It is an object of the present invention to provide a control method in which an after-mentioned compressive material is elastically deformed and the electrostatic actuator causes ink discharge through the ink discharge hole by non-driving. The electrostatic actuator has a series of conductive plates provided in parallel with an elastic compressible material sandwiched in order to discharge ink from the nozzle chamber through the ink discharge hole. Compressible materials desirably include materials with high dielectric properties, such as piezoelectric, electrostrictive materials, or materials that can switch between a ferroelectric phase and an antiferroelectric phase. An electrostatic actuator places one planar layer at a time to form an initial sandwich-shaped preform, and then selectively etches the preform to electrically connect the conductive parallel plates. It is desirable to build using interconnected semiconductor manufacturing technology. In addition, a series of conductive parallel plate groups are composed of different materials, thereby allowing selective etching of the plates, which can be divided into two groups of different polarity during operation. The plates from each group are connected to a common conductive portion for storing electricity on the conductive plates. These plates are preferably constructed using chemical vapor deposition techniques. The nozzle chamber outer surface of the inkjet nozzle has a number of etching holes to allow for faster sacrificial layer etching during construction.

    Another aspect of the present invention is to provide an ink jet print nozzle apparatus having an ink supply chamber connected thereto. The mechanism includes an ink discharge means having a surface in communication with the ink in the nozzle chamber, a recoil means connected to the ink discharge means, and a first actuator means connected to the ink discharge means.

    The method for discharging ink from the ink chamber includes an activation step and a deactivation step for the first actuator means. The activation step of the first actuator means drives the ink discharge means from the rest position to the firing preparation position, and the deactivation step drives the recoil means to discharge ink from the nozzle chamber through the ink holes. Driving the ink discharging means. Furthermore, the recoil means has an elastic member, and causes the elastic means to move elastically when the first actuator moves. The driving of the ink discharging means includes an elastic member that operates on the ink discharging means. The first actuator is preferably an electromagnet actuator, and the recoil means is preferably a torsion spring. The ink discharge means and the first actuator are interconnected in a cantilever arrangement, where a small movement of the first actuator means causes a large movement of the ink discharge means. It is desirable that the recoil means is substantially disposed at a portion serving as a fulcrum of the cantilever structure.

    The first actuator has a solenoid coil surrounded by a first fixed magnet pole and a second movable magnet pole. As a result, when the coil is driven, the poles move relative to each other by the movable magnet pole connected to the actuator side of the cantilever structure. The movable magnet pole preferably has a number of grooves so that ink flows through the pole during movement. The ink ejection means has a surface that substantially engages one surface of the piston or plunger or nozzle chamber.

    Another aspect of the present invention is the provision of an inkjet nozzle device. The ink jet nozzle device has an ink discharge port for discharging ink, the ink discharge port has a nozzle chamber interconnected with the ink discharge port, and has a movable wall having an electromagnetic coil. The nozzle chamber is in a magnetic field, and when the electromagnet coil is driven, the movable wall is moved under force, and as a result, ink is discharged from the nozzle chamber through the ink discharge port.

    Further, the movable wall rotates when driven and is connected to the nozzle chamber via the ink supply chamber, and the nozzle chamber is refilled with ink from the ink supply chamber when ink is discharged. The movable wall is preferably interconnected with the nozzle chamber wall by elastic means. The elastic means acts to return the movable wall to the rest position when the electromagnetic coil is not driven. The electromagnet coil preferably has a number of layers consisting essentially of copper. Furthermore, the ink jet nozzle can be formed in a permanent magnetic field supplied by a neodymium iron boron magnet.

    Another aspect of the present invention is the provision of an inkjet print nozzle device. The inkjet print nozzle arrangement has a nozzle chamber in communication with the ink chamber, a magnetic piston and a drive coil, which is utilized for storage of ink printed out by the nozzle device. The nozzle chamber has a nozzle chamber discharge hole for discharging ink from the nozzle chamber. The magnet piston is disposed on an aperture in the nozzle chamber and the drive coil is disposed adjacent to the magnet piston. As a result, when driven by electric current, a force that sufficiently moves the piston from the first position to the second position acts on the piston. This movement ejects ink in the nozzle chamber from the nozzle chamber onto the print medium through the nozzle chamber discharge holes.

    Furthermore, the print nozzle device can include a series of elastic means. The elastic means is attached to the magnet piston in order to return the magnet piston to the initial position by deactivating the drive coil. The elastic means preferably has at least one torsion spring.

    The inkjet nozzle device is constructed using semiconductor manufacturing technology, and the magnet piston and / or the coil is constructed by a dual damascus process. It is desirable to provide a nozzle rim in the hole of the nozzle chamber outlet so as to press the spread of ink on the hydrophilic surface. Preferably, the drive coil is constructed from a copper placement process and the magnet piston is constructed from a rare earth magnet material.

    Furthermore, the elastic means in the inkjet print nozzle device can be composed of silicon nitride.

    An aspect of the present invention is the provision of an ink jet nozzle having an ink fountain, a nozzle chamber and shutter means. The ink tank supplies ink under an oscillating pressure, the nozzle chamber has an ink outlet for ejecting ink droplets onto the print medium, and the shutter means connects the ink fountain and the nozzle chamber. The shutter means can be operated using electromagnetic action to control the discharge of ink from the ink discharge port.

    In an embodiment, the electromagnet is driven to move an arm interconnected with at least one end of the shutter means. As a result, the groove opens because the ink flows. Further, a low holding current is maintained in order to maintain the open state of the groove, and after the electromagnet is not driven, the shutter returns to the closed state. The electromagnet has first and second ends, each end being disposed proximate to the arm, and the electromagnetic force action includes movement of the arm proximate to both ends. Further, the arm rotates between the first and second end portions of the electromagnet, and the electromagnet is helical.

    The ink jet printing nozzle preferably has elastic means connected to the shutter means. The elastic means is elastically deformed by the action of electromagnetic force and returns to its initial position by deactivating the shutter means, limiting the excessive flow of ink from the ink fountain to the nozzle chamber.

    The elastic means preferably has a coil spring. A copper coil surrounding the soft magnetic metal core is formed on the ink jet printing nozzle by utilizing semiconductor manufacturing technology. The copper coil can be formed using a Damascus process. The shutter means preferably has a series of movable plates that move over holes formed in the wall of the nozzle chamber.

    Another aspect of the present invention is to provide a method for discharging ink from an inkjet printing nozzle. Inkjet printing nozzles are constructed using electromagnetically driven shutters to control the flow of ink to the nozzle chamber. As a result, an initial high pressure cycle of the pressurized ink supply trough for ink discharge, a low pressure cycle to separate the ink drops discharged from the ink in the nozzle chamber, and refilling the nozzle chamber with ink Using the second high-pressure cycle of the pressurized ink supply tank, the ink is discharged from the nozzle chamber with the shutter open.

    Another aspect of the present invention is arranged between a nozzle chamber having an ink discharge port for discharging ink from the nozzle chamber, an ink supply tank for supplying ink to the nozzle chamber, and the nozzle chamber and the ink supply tank. An inkjet nozzle having a magnet actuator. The magnet actuator is driven by a magnetic pulse cycle supplied from the outside, and discharges ink.

    Further, the ink jet nozzles constitute a part of the nozzle array, and each nozzle has blocking means. The blocking means blocks the movement of the magnet actuator so that ink is not discharged from the nozzle chamber during the magnet pulse period of the current. The blocking means preferably has a thermal actuator provided with a movable end projection. The end projection can be moved to a position that blocks the path of motion of the magnet actuator. The magnet actuator has an end projection designed to engage the blocking means during movement of the actuator. The magnetic actuator is preferably secured to the wall proximate the nozzle chamber by two bendable strips. These strip portions allow a bending operation of the magnet actuator when the actuator is driven by a magnetic pulse cycle supplied from the outside.

    Further, the thermal actuator has substantially two arms secured to the circuit board. The first arm has a thin and winding structure wrapped in a material with a high coefficient of thermal expansion, and the second arm is connected to the circuit board to concentrate the bending of the thermal actuator in the part close to the circuit board A thicker arm than the first arm, with a tapered thin portion at a position close to the end. The blocking means is placed in a well having a slow flow through the well. The serpentine arms of the thermal actuator are preferably arranged side by side along the cavity.

    Inkjet nozzles are built through the manufacture of silicon wafers using semiconductor manufacturing techniques. The actuators have a silicon nitride cover that is required to insulate and passivate them from adjacent parts. Furthermore, the nozzle chamber can be formed from a high density, low pressure plasma etch of a silicon substrate.

    Another aspect of the present invention is to provide an inkjet nozzle having a nozzle chamber, a stationary electrical coil and a movable plunger plate. The nozzle chamber has an ink discharge hole in one wall of the chamber, and the stationary electrical coil is disposed in the chamber or the wall of the chamber. An electric coil is embedded in the movable plunger plate, and is arranged close to the fixed electric coil. When the amount of current passing through the arranged coil changes, the movable plunger plate moves toward or away from the stationary electric coil. This movement is used to discharge ink from the nozzle chamber via the ink discharge port.

    In addition, the ink jet nozzle has spring means connected to the movable plunger plate. The movable plunger plate moves from the rest position to the spring load by driving the coil, and the spring means returns the movable coil to the rest position by deactivating the coil. As a result, ink is discharged from the ink discharge port. Preferably, the fixed electric coil of the movable plunger plate has a large number of spiral coils formed of a conductive material, and the stacked conductive materials are connected to the center of the spiral axis. The coils are electrically connected to form a coupled circuit.

    Further, the spring means has a torsion spring attached to the movable coil, and a connector to the conductive elongated coil is disposed in the torsion spring. The coil is substantially made of copper and is preferably formed using a damascus structure. The nozzle is configured using sacrificial etching to create a moving coil structure. The nozzle chamber preferably has a series of grooves in the wall of the nozzle chamber to supply ink to the nozzle chamber, and the outer surface of the nozzle chamber is for etching the sacrificial layer utilized during construction of the inkjet print nozzle. It is preferable to have a series of small etching holes.

    Another aspect of the present invention is to provide a method for discharging ink from a nozzle chamber. The method utilizes an electromagnetic force between two coils embedded in a location for moving at least one plate. The movement further causes ink to drain from the nozzle chamber. Furthermore, utilization of electromagnetic force is comprised from utilization of the electromagnetic force between the coils embedded in the movable plate and the fixed plate. As a result, the movable plate moves closer to the fixed plate and moves further, so that the movable plate connected to the spring stores energy in the spring, and when the current flowing in the coil is cut off, the spring stores the stored energy. Discharging, which causes the movement of the movable plate and causes ink ejection from the nozzles.

    In another aspect of the invention, the inkjet nozzle arrangement includes: a nozzle chamber having an ink outlet for discharging ink, an ink supply basin for supplying ink to the nozzle chamber, within the nozzle chamber A linear stepper actuator which is connected to the arranged plunger and further to the plunger, and drives the plunger to discharge ink from the ink discharge port. At least one surface of the plunger disposed along the wall of the nozzle chamber is hydrophobic. The linear actuator connected to the plunger in the inkjet nozzle chamber is preferably driven in three phases by a series of electromagnets. A series of twelve electromagnets are preferably arranged in opposing pairs along the linear actuator. Furthermore, each phase is doubled, resulting in four electromagnets for each layer. The inkjet nozzle has an open wall along the back surface of the plunger, the wall having a series of columns to form a filter for ink flow through the open wall into the nozzle chamber. Yes. The linear actuator structure has a guide at the opposite end of the nozzle chamber to guide the linear actuator.

    Another aspect of the present invention is to provide an inkjet nozzle having a nozzle chamber, an ink supply tub and a shutter. The nozzle chamber has an ink discharge port for discharging ink from the nozzle chamber, and the ink supply tank supplies ink to the nozzle chamber. The shutter opens and closes the flow between the ink fountain and the chamber to cause ink discharge from the ink discharge port. The shutter has a ratchet edge for moving the shutter from the open position to the closed position by using driving means driven by an actuator. Further, the drive means has gear means connected to the drive means. The gear means reduces the driving cycle of the ratchet edge with respect to the driving cycle of the driving means. The drive means uses a conductive element in the magnetic field to exert a force on the ratchet edge, and uses a gear mechanism used to transmit the force to the ratchet edge, to exert a force on the teeth of the gear mechanism. It is preferable to use a conductive element in the magnetic field. The conductive element desirably has a stretchable structure designed to expand or contract the movement of the conductive element.

    The shutter mechanism has a series of grooves corresponding to a retainer utilized to guide the shutter between the ink fountain and the nozzle chamber, the shutter being formed through assembly of a nozzle array on the silicon wafer structure. . The ink in the ink supply tub is preferably driven using a vibrating ink pressure.

    Another aspect of the present invention is to provide an inkjet nozzle having a nozzle chamber, an ink fountain, and a tapered magnet plunger. The nozzle chamber has an ink discharge port for discharging ink from the nozzle chamber, and the ink tank supplies ink to the nozzle chamber. The tapered magnet plunger is disposed between the nozzle chamber and the ink supply tub. The tapered magnet plunger is surrounded by an electromagnet device. Therefore, when the apparatus is driven, the magnetic plunger receives a force toward the ink discharge port, thereby causing ink to be discharged from the ink discharge port.

    The plunger is preferably substantially cylindrical and preferably has a tapered rim at a portion adjacent to the electromagnet device. The electromagnet device has a cylindrical shape, and the plunger is disposed at the center of the cylinder. The plunger is preferably connected to an elastic means for returning the plunger to its initial position by deactivation of the electromagnet device. The magnet plunger is connected to the side wall of the nozzle chamber using a series of springs that extend radially and spirally to the side wall. The spring is preferably formed from a tension release state of the disposed material. Further, the disposed material can be a nitride.

    Another aspect of the present invention is the provision of a shutter grill ink jet printer. In a shutter grill ink jet printer, the shutter is electromagnetically actuated from a closed state to an open state to eject ink from the chamber onto the print medium.

    Another aspect of the present invention is to provide a shutter inkjet nozzle having an ink chamber, an ink reservoir and a shutter device. The ink chamber has an ink discharge nozzle for discharging ink from the ink chamber, and the ink tank supplies ink to the ink chamber under pressure. A shutter mechanism is disposed between the ink fountain and the ink chamber to restrict ink between the ink fountain and the ink chamber. This causes ink ejection from the chamber and the shutter mechanism is activated on demand.

    Furthermore, the actuator has an electromagnet coil device that attracts the magnet bar. The coil is preferably fixed to the wafer, and the magnet bar is preferably connected to a shutter plate that opens and closes over a series of shutter holes that allow ink flow between the ink fountain and the ink chamber. The shutter inkjet nozzle desirably includes an actuator having at least one linear spring in order to amplify the moving distance of the shutter plate that covers the shutter hole when the actuator is operated. The linear spring is fixed to one side of the ink chamber, and the electromagnet coil is fixed to the opposite side of the ink chamber with respect to the shutter plate operated between the linear spring fixing device and the electromagnet fixing device. The ink fountain preferably has a vibrating ink under pressure. The shutter mechanism has a number of shutter plates that have a number of shutter plates that cover a number of corresponding shutter holes that allow ink flow between the ink chamber and the ink fountain. Furthermore, the ink chamber can be formed by crystallographic etching of a silicon wafer. The ink drop ejection cycle from the nozzle chamber is substantially half of the ink vibration pressure cycle in the ink fountain. The inkjet nozzle array is divided into separate groups, each group being driven in alternation to relieve pressure conditions within the inkjet tub.

    Another aspect of the present invention is the provision of a method for operating a shutter inkjet print nozzle having a nozzle chamber and an ink fountain. The ink fountain has a vibrating ink pressure. The method opens the shutter and causes ink to drain from the nozzle chamber, thereby reducing the ink in the nozzle chamber and opening the shutter during the next high pressure phase of the ink pressure, further And then closing the shutter at the end of the high pressure period to limit the back flow of ink from the nozzle chamber to the ink fountain.

    In another aspect of the present invention, the ink jet print nozzle device includes an ink discharge chamber having a discharge port for discharging ink. The ink discharge chamber communicates with an ink tank that supplies ink to be discharged. At least one wall of the chamber has a movable partition that is driven using Lorentz force to cause ink ejection from the ejection chamber. The movable bulkhead has a corrugated or foldable shape and has an embedded conductive coil. When the partition is actuated by Lorentz interaction between the current of the conductive coil and the static magnetic field, the partition can be expanded by the folding and stretching action. The partition walls are preferably formed using an appropriate halftone mask. The ink chamber in the inkjet printing nozzle is formed using isotropic etching of a silicon wafer.

    Another aspect of the present invention is to provide an ink jet nozzle that utilizes a change in state of a magnetostrictive substance in a magnetic field as an actuator for causing ink to be discharged from the chamber. Furthermore, the method has a magnetostrictive valve in the rest position. The magnetostrictive valve is deformed into an ejected state by application of a magnetic field, and as a result, ink is ejected from the chamber. The magnetic field is preferably provided by the passage of current to a conductive coil adjacent to the magnetostrictive material. The ink chamber is formed from a crystallographic etch of the silicon wafer to have one surface of the chamber substantially formed by the actuator. The actuator is attached to one wall of the chamber opposite the nozzle port from which ink is discharged. The nozzle port is preferably formed by back-etching the silicon wafer into the buried epitaxial layer and etching the nozzle hole of the epitaxial layer. Further, crystallographic etching also includes those for sidewall trenches, which are non-etched layers of processed silicon wafers. As a result of the crystallographic etching process, the size of the nozzle chamber is expanded. Preferably, the magnetostrictive shape memory alloy is substantially Terfanol-D.

    Another aspect of the present invention is to provide an ink jet nozzle apparatus having a nozzle chamber, an ink supply source, an electrostatic actuator, and a magnetic field generating means. The nozzle chamber has an ink outlet on one wall of the chamber, and the ink supply is interconnected with the nozzle chamber. The electrostatic actuator discharges ink from the nozzle chamber through the ink discharge port, and the magnetic field generating means generates a magnetic field around the magnetostrictive actuator to cause the magnetostrictive action of the actuator. The ink is discharged from the ink discharge port by the magnetostrictive action of the actuator. The magnetic field generating means preferably has a conductive coil surrounding the magnetostrictive actuator. Further, the inkjet nozzle device can be formed on a silicon wafer using semiconductor processing technology, and the conductive coil is interconnected with a lower metal layer that provides the control circuitry for the inkjet printer.

    Another aspect of the present invention is to provide a method for discharging ink from a chamber. The method involves the use of a transformation from the martensite phase to the austenite phase (or visa versa) of the shape memory alloy as an actuator for causing ink ejection from the chamber. In addition, the actuator has a dormant conductive shape memory alloy panel. The conductive shape memory alloy panel is transformed into an ink discharge state by heating, causing ink discharge from the chamber. Heating is preferably caused by a current flowing through the shape memory alloy. The chamber is formed by crystallographic etching of a silicon wafer so as to have one surface of the chamber substantially formed by the actuator. The actuator is preferably formed from a conductive shape memory alloy arranged in a tortuous shape and attached to the chamber wall opposite the nozzle port from which ink is discharged. Furthermore, the nozzle port can be formed by back-etching the silicon wafer into the epitaxial layer and etching the nozzle holes in the epitaxial layer. Crystallographic etching involves the etching of the sidewall grooves of the unetched layer of the processed silicon wafer, and as a result of the crystallographic etching process, the chamber dimensions are expanded. The shape memory alloy is preferably composed of a nickel titanium alloy.

    Another aspect of the present invention is the provision of an inkjet nozzle device for the discharge of ink from an ink discharge nozzle. The inkjet nozzle device has the following. A circuit board; a conductive coil formed on the circuit board and operable in a controlled manner; a movable magnet actuator surrounding the conductive coil and forming an ink nozzle chamber between the circuit board and the actuator. The movable magnet actuator further includes an ink discharge nozzle defined therein; a change in the voltage level of the conductive coil moves the magnet actuator from the first position to the second position, thereby reducing the ink pressure in the nozzle chamber. A change occurs that results in the ejection of ink from the nozzle chamber.

    The apparatus further includes an ink supply channel interconnected with the nozzle chamber for resupplying ink to the nozzle chamber. This interconnection can consist of a series of elongated grooves etched into the circuit board. The circuit board can be composed of a silicon wafer, and the ink supply groove is etched through the wafer.

    The movable magnet actuator is movable by operation of the conductive coil from a first position having an expanded nozzle chamber volume to a second position having a contracted nozzle chamber volume. The apparatus further includes at least one elastic member attached to the movable magnet actuator for biasing the movable magnet actuator in the first position in the resting state. At least one elastic member has a leaf spring.

    The groove is defined between the magnet actuator and the circuit board, and the substrate and the actuator portion adjacent to the groove can be hydrophobized so that ink splash through the groove is minimized.

    The magnet substrate is disposed between the conductive coil and the circuit board so that the magnet actuator and the nozzle plate substantially surround the conductive coil. The magnet actuator can be formed from a cobalt nickel iron alloy.

IJM Consistory Clauses
Another aspect of the present invention is the provision of a method for manufacturing a radial plunger ink jet printhead. An array of nozzles is formed on the substrate using a planar monolithic arrangement, lithographic and etching processes. Multiple inkjet heads are preferably formed simultaneously on a single planar circuit board such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. The method consists of the following steps: (a) using an initial semiconductor wafer having an electronic circuit layer and a buried epitaxial layer in it, (b) etching a recess in a nozzle chamber in the wafer, the etching is substantially (C) placing and etching a first layer having a high saturation flux density on the electrical circuit layer to define a first magnetic plate; and (d) first layer and electrical stop. An insulating layer is disposed on the circuit layer and etched. The etching includes subsequent etching of the vias to the conductive layer, (e) placing the conductive layer over the insulating layer in a form to form a conductive coil conductively connected to the first layer, and etching (F) placing and etching a sacrificial material layer in the region of the first magnet plate and coil, this etching defining a hole for a series of spring posts, (g) a coupled second magnetic Place and etch a second layer with high saturation flux density to form a plate, a series of connected springs, spring posts, (h) etch back of wafer to epitaxial layer, (i) epitaxial layer And (j) etching away the remaining sacrificial material layer.

    Step (f) further includes etching the recesses defining a series of spring posts. Step (g) preferably includes forming a series of leaf springs coupled to the first magnet plate for resiliently biasing the magnet plate in the first direction. The conductive layer can consist essentially of copper.

    Etching layer. It is possible to include etching vias for electrical connection with portions of subsequent layers.

    The magnetic flux material can be substantially composed of a cobalt nickel iron alloy, and the wafer can be composed of a double-side polished CMOS wafer.

    This step is also preferably used to simultaneously divide the wafer into separate print heads.

    Another aspect of the present invention is to provide a method for manufacturing an electrostatic inkjet printhead. Among them, an array of nozzles is formed on a substrate using a planar monolithic arrangement, lithograph, and etching process. Preferably, multiple inkjet heads are formed simultaneously on a single planar substrate such as a silicon wafer.

    The print head can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. This method consists of the following steps. (A) using an initial semiconductor wafer having an electrical circuit layer formed thereon, (b) forming a bottom electrode layer of a conductive material on or in the electrical circuit layer, (c) on the electrode layer Disposing and etching a first hydrophobic layer; (d) disposing and etching a first sacrificial layer of a sacrificial material on the first hydrophobic layer; and (e) overlying the first sacrificial layer. An upper electrode layer made of a conductive material is disposed and etched. The upper electrode layer has a predetermined portion connected to an electric circuit layer. (F) A film layer is disposed on the upper electrode layer and etched. g) Disposing and etching a second sacrificial layer over the membrane layer, the second sacrificial layer forming a nozzle chamber wall blank, (h) Disposing and etching an inert material layer over the second sacrificial layer In addition to the nozzle discharge hole connected to the nozzle chamber, Forming the nozzle chamber wall, (i) etching the ink supply groove that connects the nozzle chamber to etch away the sacrificial layer in a manner that leaves the (j) operating system.

    The upper electrode layer and the membrane layer have foldable edges for moving the membrane layer. The bottom electrode layer can be formed from a metal planar layer of the circuit layer.

    The ink supply groove can be formed by etching the groove from the back surface of the wafer. Step (h) preferably includes etching a nozzle rim around the nozzle discharge hole and a series of small holes formed in at least one wall of the nozzle chamber. The hydrophobic layer can consist essentially of polytetrafluoroethylene.

    These steps are also preferably used to simultaneously divide the wafer into separate print heads.

    Another aspect of the present invention is to provide a method of manufacturing a stacked electrostatic inkjet printhead. Among them, an array of nozzles is formed on a substrate using a planar monolithic arrangement, lithograph, and etching process. Multiple inkjet heads are preferably formed simultaneously on a single planar substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps: (a) using an initial semiconductor wafer on which an electrical circuit layer is formed, and including etched vias for connection of subsequent layers and circuits, (b) ) Repeatingly arranging a series of planar layers on the electronic circuit layer. The planar layer includes a first conductive layer, a second conductive layer, and an intermediate compressible non-conductive layer, (c) etching the planar layer to form a series of alternating stacked structures, (d) Isolating at least one first end of the alternately stacked structure; (e) a second conductive layer and an intermediate compressible layer along the end to expose the first conductive layer; Etching, (f) isolating the second end of the alternately stacked structure, (g) second conductive layer and intermediate compressive layer second to expose the second conductive layer. (H) a first portion interconnected with the first conductive layer along the first end, and a second conductive layer along the second end; Disposing and etching a third conductive layer having a second portion interconnected, the first and second portions corresponding in the electrical circuit layer (I) a sacrificial material layer is placed on the wafer and etched, etching forms a mold for a later nozzle chamber layer, (j) in the ink drain holes In addition, an inert material layer is disposed and etched on the sacrificial layer to form a nozzle chamber surrounding the conductive layer, (k) ink through a portion of the wafer to interconnect with the nozzle chamber (1) Etch away the sacrificial material layer.

    In step (j), it is preferable to etch a series of small holes in the nozzle chamber wall in order to communicate the chamber and the surroundings. The first conductive layer and the second conductive layer are preferably formed from different conductive materials. The compressible layer can consist essentially of an elastomer. The method preferably further includes expansion of the elastomer along the edge. The ink supply groove can be etched through the wafer from the back surface of the wafer.

    This step is also preferably used to split the wafer into separate print heads simultaneously.

    Another aspect of the present invention is to provide a method for manufacturing a reversal spring type ink jet print head. Among them, an array of nozzles is formed on a substrate using a planar monolithic arrangement, lithograph, and etching process. Multiple inkjet heads are preferably formed simultaneously on a single planar substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

Another aspect of the present invention is the provision of a method of manufacturing an ink jet print head that includes a series of nozzle chambers. The method comprises the following steps: (a) using an initial semiconductor wafer on which an electronic circuit layer and a buried epitaxial layer are formed, (b) etching a recess in a nozzle chamber in the wafer, Etching stops at the epitaxial layer substantially, (c) a first layer having a high saturation flux density is placed on the electrical circuit layer and etched to define a first magnet plate, (d) An insulating layer is disposed over and etching the first layer and the electrical circuit layer, the etching includes etching a via for a later conductive layer, (e) electrically connected to the first layer A conductive layer is disposed on the insulating layer and etched in the form of a conductive coil; (f) a sacrificial material layer is disposed and etched in the region of the first magnet plate and the coil; this etching Is A series of springs around the pivot axis of the lever arm, defining a series of spring struts, lever arms, holes for the interconnected nozzle paddles, (g) interconnected magnet plates, lever arms attached to the nozzle paddles Place and etch a second layer with high saturation flux density to form pillars, (h) Etch back of wafer to epitaxial layer, (i) Recess of nozzle chamber through epitaxial layer (J) The remaining sacrificial layer is etched and removed.

    Step (f) can further include etching a recess defining a series of spring struts, and step (g) elastically moves the second magnet plate toward the opposite direction of the first magnet plate. Preferably, it includes the formation of a series of torsional pivot springs coupled to the lever arms that bias.

    The conductive layer is substantially composed of copper, and the magnetic flux material is substantially composed of cobalt nickel iron alloy.

    Etching the layer preferably includes etching a via for electrical connection with a subsequent layer portion.

    These steps are also preferably used to simultaneously divide the wafer into separate print heads.

    Another aspect of the present invention is to provide a method for manufacturing a paddle type ink jet print head. Among them, an array of nozzles is formed on a substrate using a planar monolithic arrangement, lithograph, and etching process. Multiple inkjet heads are preferably formed simultaneously on a single planar substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps: (a) using an initial semiconductor wafer on which an electronic circuit layer and a buried epitaxial layer are formed, the wafer being connected to a predetermined portion of the circuit layer. An upper protective layer having a series of vias is formed, and (b) a first conductive layer having a first conductive coil connected to a predetermined portion of the circuit layer is formed on the semiconductor wafer layer. (C) Disposing and etching a non-conductive layer having a predetermined via for connecting the subsequent layer and a lower layer on the first conductive layer, and (d) on the non-conductive layer A second conductive layer is formed. The second conductive layer also includes a second conductive coil and a connection portion between the predetermined portion of the coil and the first conductive coil and the circuit layer. (E) a second non-conductive layer Disposing and etching on the second conductive layer, this etching includes etching a series of grooves in the second non-conductive layer, (f) the first and second non-conductive layers and the first and second Etch a series of grooves through the conductive layer to form a nosul paddle, (g) etch the semiconductor wafer under the nozzle paddle to define the nozzle chamber, (h) back etch the semiconductor wafer to the epitaxial layer (I) Etch the epitaxial layer to define the nozzle discharge holes and connect to the nozzle chamber.

    Step (g) can include crystallographic etching, and an epitaxial layer can be utilized as an etch stop layer.

    Step (i) preferably includes etching a series of small holes in the nozzle chamber wall that communicate with the chamber and the outer periphery.

    The first conductive layer and the second conductive layer are preferably formed substantially from copper.

    These steps are also preferably used to simultaneously divide the wafer into separate print heads.

    Another aspect of the present invention is the provision of a permanent magnet electromagnetic inkjet printhead. Among them, an array of nozzles is formed on a substrate using a planar monolithic arrangement, lithograph, and etching process. Multiple inkjet heads are preferably formed simultaneously on a single planar substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular from the substrate to the wafer.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. This method consists of the following steps: (a) An initial semiconductor wafer having an electrical circuit layer and a buried epitaxial layer thereon is used. (B) A first inactive layer is disposed and etched. This etching includes etching of predetermined vias and nozzle chamber holes. (C) A first conductive coil layer is formed on the first inactive layer around the nozzle hole. The first conductive coil layer includes a predetermined portion connected to the electric circuit layer. (D) Use nozzle holes to etch the nozzle chamber into the wafer. (E) A sacrificial material layer is disposed on the wafer including the nozzle chamber and etched. This etching also includes a series of types of etching of a series of magnet support posts and permanent magnets on the nozzle holes. (F) A magnet material layer is disposed and etched. The magnet material layer forms a permanent magnet over the nozzle hole. (G) An inert material layer that elastically connects the permanent magnet and the series of spring posts is placed and etched (h) The wafer is back-etched to the buried epitaxial layer. (I) Etching the nozzle discharge hole through the buried epitaxial layer (j) Etching away the sacrificial layer.

    The conductive coil layer is formed by a sacrificial layer that is initially placed and etched to form a conductive coil layer mold. The conductive coil layer is formed using chemical mechanical planarization and is substantially composed of copper.

    The first inactive layer is substantially composed of silicon nitride.

    These steps are also preferably used to simultaneously divide the wafer into separate print heads.

    Another aspect of the present invention is the provision of a method of manufacturing a planar swing grid electromagnet inkjet printhead. Among them, the nozzle array is formed on the substrate using a planar monolithic arrangement, a lithograph, and an etching process. Multiple inkjet heads are preferably formed simultaneously on a single planar substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected from the substrate in a direction substantially perpendicular to the substrate.

    Another aspect of the present invention is the provision of a method for manufacturing an inkjet printhead device having a series of nozzle chambers. This method consists of the following steps. (A) An initial semiconductor wafer having an electronic circuit layer and an embedded epitaxial layer thereon is used. (B) Etching a nozzle chamber hole connected to the nozzle chamber in the semiconductor wafer in the electronic circuit layer. (C) Disposing a first sacrificial layer that fills the nozzle chamber. (D) Disposing and etching a passivating material layer having vias that electrically connect the lattice structure above the nozzle chamber holes and the subsequent electrical circuit layer to the layer. (E) A first conductive material layer having a lower electric coil portion connected to the electronic circuit layer is disposed and etched. (F) An inert material layer is disposed on the first conductive material layer and etched. The inert material layer has a predetermined via that connects the first conductive material layer and the subsequent layer. (G) A second sacrificial layer is disposed and etched. This etch includes a mold etch for a fixed magnet shaft, pivot, series of springs, and spring struts. (H) A high saturation flux material layer is placed and etched to form a fixed magnet shaft, pivot, connected shutter grid lever arms and springs, and spring struts. (I) A second inert material layer having a predetermined via that connects a lower layer and a later layer is disposed on the high saturation magnetic flux material layer and etched. (J) Disposing and etching a second conductive material layer having side electrical coil portions connected to the first conductive material layer. (K) A third conductive material layer having an upper electrical coil portion connected to the side conductive material layer is disposed and etched. (L) An upper inert material layer is placed as a corrosion barrier and etched. (M) Back-etch the wafer up to the epitaxial layer. (N) Etching nozzle holes in the epitaxial layer. (O) Etching away the sacrificial layer.

    These steps can also include the simultaneous formation of a shutter grid guard around the shutter.

    The epitaxial layer is utilized as an etch stop layer in step (b), and step (b) can include crystallographic etching of the wafer.

    The conductive layer can be substantially composed of copper, and the inactive layer can be substantially composed of silicon nitride.

    These steps are also preferably used to simultaneously divide the wafer into separate print heads.

    Yet another aspect of the present invention is to provide a method for manufacturing a pulsed magnetic field inkjet printhead. The nozzle array is formed on the substrate by planar monolithic arrangement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing a magnetic field inkjet printhead that ejects ink while inverting two plates. The nozzle array is formed on the substrate by planar monolithic arrangement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electronic circuit layer therein is used, and (b) a first lower fixed coil layer made of a conductive material previously connected to the electronic circuit layer is disposed and etched. (C) A first protective layer is disposed on the fixed coil layer and etched. (D) A first movable coil layer made of a conductive material previously connected to the electronic circuit layer is disposed and etched. (E) A second protective layer is disposed on the movable coil layer and etched. (F) A sacrificial material layer is disposed on the second movable coil layer and etched. (G) Disposing a passive material over the sacrificial material layer and etching to form a nozzle chamber around the first and second coil layers. (H) The ink supply groove connected to the nozzle chamber is etched. (I) Etching away the sacrificial material.

    The method preferably includes forming a hydrophobic layer between the first and second coil layers.

The first and second coil layers are preferably formed in the passive material layer and formed using a dual damascus process. The ink supply groove is formed by step (h) from the back surface of the wafer. This step (h) preferably includes etching a series of small holes in at least one wall of the nozzle chamber.

    The hydrophobic layer can consist essentially of polytetrafluoroethylene. Further, the method includes the step of placing a corrosion barrier on the portion of the device to reduce the corrosion effect.

    The wafer can be constructed from a double-side polished CMOS wafer.

    The step preferably also includes the step of simultaneously separating the wafer into a separated print head.

    Yet another aspect of the present invention is to provide a method for manufacturing an inkjet printhead using a linear stepper actuator, the nozzle array of which is formed on a substrate by planar monolithic placement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.
Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer therein is used, and (b) a first sacrificial layer forming a lower electric coil mold is disposed and etched. (C) A first conductive material layer having a lower electric coil portion connected to the electric circuit layer is disposed and etched. (F) A passive material layer is disposed on the first conductive material layer and etched. The passive material layer has a predetermined via that connects the subsequent layer and the first conductive material layer. (G) Arranging and etching the second sacrificial layer, including etching the mold of the fixed magnetic pole, the series of movable poles, the horizontal guide and the core pusher rod. (H) Arrange and etch highly saturated magnetic flux material that forms a fixed magnetic pole, a series of movable poles, horizontal guides and core pusher rods (I) A second passive material layer is disposed on the highly saturated magnetic flux material layer and etched. The passive material layer has a predetermined via that connects the subsequent layer and the first conductive material layer. (J) A second conductive material layer having a side electrical coil portion connected to the first conductive material layer is disposed and etched. (K) A third conductive material layer having an upper electric coil portion connected to the side conductive material layer is disposed and etched. (L) A hydrophobic layer is disposed and etched to form a plunger element around the core pusher rod. (M) A third sacrificial material layer is placed and etched to form a nozzle chamber mold. (N) Place and etch a third layer of passive material that forms the nozzle chamber around the plunger element. (O) The ink supply groove is etched toward the nozzle chamber. (P) Etching away the sacrificial material layer.

    The conductive layer can be substantially composed of copper and the passive layer can be substantially silicon nitride. The hydrophobic layer can consist essentially of polytetrafluoroethylene. The wafer can be constructed from a double-side polished CMOS wafer.

    This step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method for manufacturing a print head, the nozzle array of which is formed on a substrate by a planar monolithic arrangement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing a tapered magnetic pole electromagnet ink jet print head, the nozzle array of which is formed on a substrate by planar monolithic placement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer and a buried epitaxial layer formed thereon is used. (B) Etching a recess in the nozzle chamber into the wafer, the etching is substantially stopped at the epitaxial layer. (C) Fill the recess in the nozzle chamber with the first sacrificial material layer. (D) A first layer having a high saturation magnetic flux density is disposed on the first electric circuit layer and etched to define a first magnetic plate. (E) An insulating layer is disposed on the first layer and the electric circuit layer and etched. The etching includes via etching for subsequent layers. (F) A conductive layer is placed on the insulating layer in the form of a conductive coil conductively connected to the first layer and etched. (G) A sacrificial material layer is placed in the region of the first magnetic plate and coil and etched. (H) A second layer having a high saturation magnetic flux density is disposed and etched to form a second magnetic plate surrounding the nozzle chamber with a ring. (I) A passive material layer that elastically connects the magnetic plate and the ring is disposed and etched. (J) Etch the wafer back to the epitaxial layer. (K) Etch the ink discharge nozzle connected to the recess in the nozzle chamber through the epitaxial layer. (K) Etching away the remaining sacrificial material layer.

    The conductive layer can be substantially composed of copper. The magnetic flux material can be substantially composed of a cobalt nickel iron alloy and the passive material can be composed of silicon nitride.

    The method can include placing a corrosion barrier over the portion of the device, reducing the effects of corrosion.

    Layer etching preferably includes via etching to allow subsequent electrical connection with the layer portion.

    The second magnet plate preferably rocks the taper adjacent to the nozzle chamber.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead using a linear spring electromagnet grid, the nozzle array being formed on a substrate by planar monolithic placement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer therein is used. A buried epitaxial layer is formed thereon. (B) The nozzle chamber aperture connected to the nozzle chamber in the semiconductor wafer is etched into the electric circuit layer. (C) A first sacrificial layer is disposed to fill the nozzle chamber. (D) A passive material layer is placed and etched. This passive material layer includes a grid structure on the nozzle chamber aperture and vias for electrical connection between the electrical circuit layer and subsequent layers. (E) A first conductive material layer having a series of lower electrical coil portions connected to the electrical circuit layer is disposed and etched. (F) A passive material layer is disposed on the first conductive material layer and etched. The passive material layer has a predetermined via that connects the subsequent layer and the first conductive material layer. (G) Disposing and etching a second sacrificial material layer. This etching includes etching molds of solenoids, fixed magnetic poles, and linear spring anchors. (H) A highly saturated magnetic flux material layer is placed and etched to form a series of fixed magnetic poles, linear springs, linear spring anchors, and connecting shutter gratings. (I) A second passive material layer having a predetermined via that connects the lower layer and the subsequent layer is disposed on the highly saturated magnetic flux material layer and etched. (J) Disposing and etching a second conductive material layer having side electromagnetic coil portions surrounding a series of fixed magnetic poles connected to the first conductive material layer. (K) A third conductive material layer having an upper electrical coil portion connected to the side conductive material layer is disposed and etched. (L) Place and etch the upper passivation material layer as a corrosion barrier. (M) Back-etch the wafer to the epitaxial layer. (N) Etch the nozzle aperture in the epitaxial layer. (O) Etching away the sacrificial layer.

    The epitaxial layer can be used as an etch stop in step (b) which constitutes the crystallographic etching of the wafer.

    The high saturation flux material can be substantially composed of a cobalt nickel iron alloy, and the conductive layer can be composed of copper having a passive layer substantially composed of silicon nitride.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method for manufacturing a Lorenz diaphragm electromagnetic ink jet print head, the nozzle array of which is formed on a substrate by planar monolithic placement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer and a buried epitaxial layer formed thereon is used. (B) Etching a recess in the nozzle chamber into the wafer. Etching is substantially stopped at the epitaxial layer. (C) A first sacrificial material layer is disposed and etched to fill the recess in the nozzle chamber. Etching involves etching a series of ridges that stretch into the sacrificial layer above the recesses in the nozzle chamber. (D) A first passivating material layer is placed on the expanding and contracting ridge and etched. The first passive material layer leaves a series of stretchable wrinkles on its surface. (E) A coil layer having a series of wire portions that are placed on and etched from a series of ridges on the first passivating material layer and that are stretched over a nozzle recess. Form. (D) A second passive material layer is disposed on the first conductive material layer and etched. The first and second passivating material layers leave a series of stretchable wrinkles on their surfaces. (E) Etch the back of the wafer to the epitaxial layer. (F) Etch the ink discharge nozzle connected to the recess in the nozzle chamber via the epitaxial layer. (G) Etching away the remaining sacrificial material layer.

    The passive material layer can consist essentially of silicon nitride, and the conductive layer can consist essentially of copper.

    Layer etching preferably includes via etching to allow subsequent electrical connection to portions of the layer.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method of manufacturing a PTFE surface injection ink jet print head that opens and closes oscillating pressure, and the nozzle array is formed on a substrate by a planar monolithic arrangement, lithographic and etching processes. It is formed. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer formed thereon is used. (B) The nozzle inlet hole is etched in the electric circuit layer. (C) A first sacrificial material layer is disposed on the electrical circuit layer and etched. Arrangement of the sacrificial material layer also includes filling the nozzle inlet holes. Etching includes etching an anchor actuator region in the first sacrificial material layer. (D) A first expansion material layer made of a material having a high coefficient of thermal expansion is disposed and etched. Etching also includes etching certain vias in the first expansion material layer. (E) A first conductive material layer is disposed on the first expansion material layer and etched. The first conductive material layer is conductively connected to the electric circuit layer through a via. (F) A second expansion material layer made of a material having a high coefficient of thermal expansion is disposed and etched. This etching includes the formation of a movable paddle element and a first conductive layer by a combination of first and second expansion material layers. (G) Disposing and etching a second sacrificial material layer. Etching also includes forming a nozzle chamber mold. (H) A passive material layer is placed over the sacrificial material layer and etched to form a nozzle chamber around the movable paddle. Etching includes etching the nozzle exhaust aperture in the passive material layer. (I) The ink supply groove is etched through the wafer. (J) Etching away the sacrificial material layer.

    Step (h) preferably includes etching a series of small holes in the passive material layer.

    The first and second intumescent material layers can be substantially composed of polytetrafluoroethylene, and the passive material layer can be substantially composed of silicon nitride.

    The ink supply groove can be formed by etching the groove from the back surface of the wafer constituting the double-side polished CMOS wafer.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method for manufacturing a magnetostrictive inkjet printhead, the nozzle array of which is formed on a substrate by a planar monolithic arrangement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing a shape memory alloy type print head, the nozzle array of which is formed on a substrate by a planar monolithic arrangement, lithographic and etching processes. Preferably, multiple inkjet heads are formed simultaneously on a single flat substrate such as a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The drive electronic circuit is preferably of the CMOS type. Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having a buried epitaxial layer and an electric circuit layer thereon is used. (B) The nozzle chamber is etched in the wafer, and the electric circuit layer is etched. (C) A sacrificial material layer is placed and etched to fill the nozzle chamber. (D) A layer of shape memory alloy is placed and etched to form a conductive paddle structure attached to the electrical circuit layer on the nozzle chamber. (E) Back-etching the semiconductor wafer to the epitaxial layer. (F) Etch the epitaxial layer to define nozzle discharge holes connected to the nozzle chamber. (G) Etching away the sacrificial layer.

    The epitaxial layer can be used as an etch stop in step (b) which constitutes the crystallographic etching of the wafer. The shape memory alloy can be substantially composed of nitinol.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

    Yet another aspect of the present invention is to provide a method for manufacturing a coil driven magnetic plate ink jet print head, the nozzle array of which is formed on a substrate by planar monolithic placement, lithographic and etching processes.

    Preferably, the multiple inkjet heads are formed simultaneously on a single flat substrate. The substrate can be a silicon wafer.

    The printhead can be formed using standard VLSI / ULSI processes and has integrated drive electronics formed on the same substrate. The integrated drive electronic circuit is of the CMOS type.

    Eventually, the ink is ejected in a direction substantially perpendicular to the substrate.

    Yet another aspect of the present invention is to provide a method of manufacturing an inkjet printhead device having a series of nozzle chambers. The method comprises the following steps. (A) An initial semiconductor wafer having an electric circuit layer formed thereon is used. (B) Etch a series of slots in at least the circuit layer to define the inlet of the nozzle recess. (C) A first magnetic flux material layer is disposed on the electrical circuit layer and etched to define a first magnetic plate. (D) An insulating layer is disposed on the electrical circuit layer and the first layer and etched. This etching includes etching vias for subsequent conductive layers. (E) A conductive layer is disposed and etched to form a conductive coil conductively connected to the electrical circuit layer. (F) A hydrophobic material layer is placed in the region of the conductive coil and etched. (G) A sacrificial material layer is disposed in the region of the coil and the first magnetic plate and etched. (H) A second layer of magnetic flux material is placed over the sacrificial material and etched to substantially enclose the conductive coil. (I) Etching away the sacrificial material. (J) Etch the ink supply channel through the wafer to form fluid communication to the nozzle chamber.

    Step (g) can further etch the depressions defining the series of spring posts, and step (h) preferably includes the step of forming the first magnetic pop plate to elastically bend the magnetic plate in the first direction. Forming a series of connected leaf springs. The conductive layer is substantially copper. Step (j) includes through-etching the wafer from the back surface of the wafer.

    The method can further include the step of disposing a corrosion burr on the device portion to reduce the corrosion effect, wherein the etching of the layer is preferably performed via the via, The step of measuring the electrical connection can be included.

    The magnetic flux material can be substantially composed of a cobalt nickel iron alloy, and the wafer can be composed of a double-side polished CMOS wafer.

    The step can preferably be used to simultaneously separate the wafers into separate print heads.

Description of preferred and other embodiments Preferred and other embodiments will now be described. In this description, for easy reference, a heading including an IJ number is attached and explained under each heading. The heading also includes a format indication having a thermal type T, a shutter type S, and an electric field type F.

Explanation of IJ01: F
FIG. 1 is an exploded perspective view for explaining the configuration of a single inkjet nozzle 4 according to the policy of the present invention.

    The nozzle 4 operates according to the principle of electro-mechanical energy conversion, and the nozzle 4 is composed of a solenoid 11 electrically connected to a magnetic plate 13 at a first end 12, the magnetic plate 13 being A power source used for operating the ink nozzle 4, for example, 14 is connected. The magnetic plate 13 can be made of conductive iron.

    Moreover, the 2nd magnetic plunger 15 comprised with the soft magnetic iron is provided. When energy is applied to the solenoid 11, the plunger 15 is attracted to the fixed magnetic plate 13. Thereby, the plunger pushes the ink in the nozzle 4 in a form that forms a high-pressure region in the nozzle chamber 17. As a result, the ink moves in the nozzle chamber 17. In the first design, this is followed by ink ejection. Since a series of openings, for example 20, are provided, ink in the region of the solenoid 11 spouts out of the openings 20 into the upper portion of the plunger 15 as it moves relative to the underlying plate 13. As a result, the ink confined in the region of the solenoid 11 increases the pressure acting on the plunger 15 and prevents the magnetic force necessary to move the plunger 15 from increasing.

    FIG. 2 shows the timing 30 of the plunger current control signal. First, the solenoid current is activated to move the plunger and eject ink from the ink nozzles. After about 2 microseconds, the current to the solenoid is turned off. At the same time or slightly later at time 32, a reverse current of approximately half the forward current is applied. Since the plunger has residual magnetism, the plunger moves in the direction opposite to the original position by the reverse current 32. A series of torsion springs 22, 23 (FIG. 1) also help the plunger return to its original position. The reverse current is turned off before the plunger magnetism reverses and the plunger is again attracted to the stationary plate.

    Referring back to FIG. 1, if the plunger is forcibly returned to the rest position, the pressure in the chamber 17 will be low. As a result, ink can flow inward from the outlet nozzle 24 and air can be sucked into the chamber 17. The speed at which the ink drop in the chamber 17 moves forward and the speed at which the ink returns later causes ink drop separation around the nozzle 24. Then, the ink droplet advances toward the recording medium with the momentum of the ink itself. The nozzle refills at the nozzle tip 24 due to the surface tension of the ink. A short time after the ink droplets are separated, a meniscus is formed on the nozzle tip in a shape having a substantially concave hemispherical surface. The surface tension causes the ink to exert a forward force, which replenishes the nozzle with ink. Therefore, the nozzle repetition rate is mainly determined by the nozzle fill time, which can be as high as 100 microseconds, depending on the mechanical coupling structure, the surface tension of the ink, and the amount of ejected drops.

    Still referring to FIG. 3, the important points regarding the operation of the electromagnetically driven print nozzle will now be described. When a current is passed through the coil 11, the plate 15 is strongly attracted to the plate 13. The plate receives a downward force and begins to move toward the plate 13. This movement gives momentum to the ink in the nozzle chamber 17. Following this, ink is ejected as described above. Unfortunately, the movement of the plate 15 increases the pressure in the region 64 between the plate 15 and the coil 11. This increase usually reduces the effectiveness of the plate when ejecting ink.

    However, in the first design, the plate 15 is preferably formed with a series of openings, for example 20, so that the ink flows back from the region 64 back into the ink chamber. The pressure inside can be reduced. Thereby, the effectiveness of the action of the plate 15 is improved.

    The opening 20 is preferably in the form of a tear that increases in diameter as the radial distance of the plunger increases. The contour of the opening can minimize magnetic flux disturbances within the plunger while maintaining the structural integrity of the plunger.

    After the plunger 15 reaches its end position, the current applied to the coil 11 reverses and the two plates 13, 15 repel. Furthermore, a torsion spring, for example 23, acts to return the plate 15 to its initial position.

    There are many substantial advantages to using a torsion spring, eg 23. That is, a compact design is possible, and the torsion spring can be configured in the same processing step using the same material as the plate 15.

    In another design, the top surface of the plate 15 is not formed with a series of openings. Rather, the internal radial surface of the plate 15 has a plurality of substantially constant cross-sectional shapes for fluid communication between the nozzle chamber 17 and the region 64 and between the plate 15 and the solenoid 11. Create a hole. When the coil 11 is activated, the plate 15 is attracted to the magnetic plate and receives a force directed against the plate 13. As a result of this movement, the fluid in region 64 is pressurized and subjected to a relatively high pressure compared to the periphery of the region. As a result, fluid flows into the nozzle chamber 17 from a plurality of holes in the internal radial surface 25 of the plate 15. In addition to the movement of the plate 15, ink is ejected from the ink nozzle port 24 by the fluid flowing into the chamber 17. Further, when the plate 15 is moved, the torsion spring, for example, 23 is elastically deformed. When the movement of the plate ends, the coil 11 becomes inactive and a slight reverse current flows. Due to the reverse current, the plate 15 acts to move away from the magnetic plate 13. Here, a torsion spring, for example 23, serves as an additional means to return the plate 15 to its initial or rest position.

Fabrication Returning to FIG. 1 again, the nozzle opening is composed of the following major parts, such as a nozzle tip 40 having an opening 24, which can be made of silicon doped with boron. The radius of the opening 24 of the nozzle tip is an important determinant which determines the dropping speed and the size of the dropping.

    Next, a CMOS silicon layer 42 is provided, on which a data recording device and a drive circuit 41 are assembled. Within this layer is also a nozzle chamber. The nozzle chamber 17 needs to have a sufficient width so as not to greatly increase the driving force required for the plunger due to viscous resistance from the chamber wall. In addition, the nozzle chamber 17 needs to have a sufficient depth so that the air sucked through the nozzle port 24 does not reach the plunger device when the plunger returns to the rest state. If the nozzle chamber 17 satisfies this condition, ink cannot be properly refilled into the nozzles, and the sucked bubbles will not form a hemispherical surface and will not form a cylindrical surface. Also provided as 44 is a CMOS dielectric and insulative layer having many current paths for current connection to the plunger device.

    Next, a fixing plate made of a ferroelectric material is provided in the form having two parts 13, 46. The two portions 13 and 46 are electrically insulated from each other.

    A solenoid 11 is also provided. The solenoid 11 is composed of a helical coil of welded copper. Preferably, copper is used because a single spiral layer is utilized to avoid fabrication difficulties, low resistivity, and high electrical ion transfer resistance.

    Next, the plunger 15 that makes the best use of the generated magnetic force is made of a ferromagnetic material. The plunger 15 and the fixed magnetic plates 13 and 46 surround the solenoid 11 as an annular surface. Thus, the magnetic flux is hardly lost, and the magnetic flux is concentrated around the gap between the plunger 15 and the fixed plates 13 and 46.

    The gap between the fixed plates 13 and 46 and the plunger 15 is one of the most important parts for the print nozzle 4. The size of the gap greatly affects the generated magnetic force, and the movement of the plunger 15 is thereby limited. A small gap is preferable for increasing the magnetic force, but a large gap is preferable for the plunger to move over a wider range. For this reason, a relatively small plunger radius can be used.

    Next, after the ink droplets are ejected, springs, for example, 22 and 23, are provided for returning the plunger 15 to the rest position. The springs, for example, 22 and 23, can be manufactured by using the same material as the plunger 15 and the same processing method. The springs, for example, 22 and 23, act as torsion springs (torsion springs) with respect to the interaction with the plunger 15.

Ultimately, all surfaces are coated with a passivating layer, such as silicon nitride (Si ₃ N ₄ ), diamond-like carbon, or other chemically inert and highly impervious layers. . Since the running device is immersed in the ink, the passivation layer is particularly important for the lifetime of the device.

    One form of detailed manufacturing process that can be used in manufacturing an integrated ink-jet head that operates according to the principles according to embodiments of the present invention can proceed using the following method.

    1. A 3 micron epitaxial silicon doped with heavy boron is placed on the double-side polished wafer.

    2. Depending on the CMOS process used, either p-type or n-type 10 micron epitaxial silicon is placed.

    3. Complete 0.5 micron single layer polysilicon two layer metal CMOS process. This step is illustrated in FIG. For ease of understanding, these figures are shown on a knot scale and do not show a cross-section on a single face of the nozzle. FIG. 4 is a heading showing various materials and cross-reference inkjet configurations in these manufacturing drawings.

    4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines contact holes for the nozzle chamber, the end of the printhead chip, the aluminum electrode and the split fixed magnetic plate divided in two.

    5. Using the oxide of step 4 as a mask, the silicon is plasma etched to the buried layer to which boron is added. This etching does not substantially etch the aluminum. This step is illustrated in FIG.

6). A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
A 7.4 micron resist is spin-coated, and the mask 2 is used for photosensitivity and development. This mask defines a split fixed magnetic plate where the resist acts as an electroplating mold. This step is shown in FIG.

    8.3 micron CoNiFe is electroplated. This step is shown in FIG.

    9. The resist is removed and the exposed seed layer is etched. This step is shown in FIG.

10. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).

  11. The nitride layer is etched using the mask 3. This mask defines contact vias between each end of the solenoid coil and the two-part fixed magnetic plate.

  12 Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electron transfer resistance, which is reliable even at high current densities.

A 13.5 micron resist is applied, and using the mask 4, it is exposed and developed. The mask defines a spiral solenoid coil and a spring post where the resist acts as an electroplating mold. This step is shown in FIG.
Electroplate 14.4 micron copper.
15. Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.
16. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.
17. Place 0.1 micron silicon nitride.
18. Place 0.1 micron sacrificial material. This layer determines the magnetic gap.
19. The sacrificial material is etched using the mask 5. This mask defines a spring post. This step is shown in FIG.
20. A seed layer of CoNiFe is placed.
A resist of 21.4.5 microns is applied, and using the mask 6, it is exposed and developed. This mask defines the walls of the magnetic plunger and the spring post. The resist forms an electroplating mold for these members. This step is shown in FIG.
Electroplate 22.4 micron CoNiFe. This step is shown in FIG.
23. A seed layer of CoNiFe is placed.
A resist of 24.4 microns is applied, and using the mask 7, it is exposed and developed. This mask defines the roof, spring, and spring post of the magnetic plunger. The resist forms an electroplating mold for these members. This step is shown in FIG.
Electroplate 25.3 micron CoNiFe. This step is shown in FIG.
26. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
27. Using the mask 8, the silicon layer to which (about) 1 micron of boron is added is plasma back etched. This mask defines the rim of the nozzle. This step is shown in FIG.
28. Plasma back etching is performed using the mask 9 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
29. Separate the chip from the glass blank. Strip all adhesive, resist, sacrificial and exposed seed layers. This step is shown in FIG.
30. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
31. Connect the printhead to the relay device.
32. Hydrophobize the front surface of the print head.
33. Fill the completed printhead with ink and test. FIG. 21 shows a nozzle filled with ink.

Explanation of IJ2 F
In the embodiment, the ink jet print head is composed of a plurality of nozzle chambers each having an ink ejection port. Ink is ejected from the ink ejection port by utilizing an attractive force acting between two plates provided in parallel.

    FIG. 22 is a cross-sectional view of a single nozzle device 110 configured in accordance with an embodiment. The nozzle device 110 is provided with a nozzle chamber 111, and ink ejected from the ink ejection port 112 is stored in the nozzle chamber 111. The nozzle device 110 can be configured on a silicon wafer by using a micro electromechanical system configuration technique described in detail later. A series of etchant holes, eg 113, are provided on the upper surface of the nozzle plate with regular intervals in order to make effective the anticorrosive etching performed on the lower layer of the nozzle device 110 during manufacturing. It has been. The size of the etchant hole 113 is small enough to prevent injection from the hole 113 due to surface tension characteristics during operation.

    Ink is supplied to the nozzle chamber 111 through an ink supply groove, for example, 115.

    FIG. 23 is a cross-sectional view of one side of the nozzle device 110. The nozzle device 110 is configured on a silicon wafer base 117. On the upper surface of the base 117, a standard CMOS two-level metal including a drive circuit and a control circuit mark necessary for each nozzle device is first constructed. There is a layer 118. This layer 118 contains two levels of aluminum, one level of aluminum 119 being used as the bottom electrode plate. The other part 120 of this layer constitutes a nitride passivation. A thin polytetrafluoroethylene (PTFE) layer 121 is provided on the layer 119.

    Next, an air gap 127 is provided between the upper and lower layers. On the air gap 127, a further PTFE layer 128 that constitutes part of the upper plane 122 is arranged. The PTFE layers 121 and 128 are provided so as to reduce the possibility that the upper and lower plates will be adsorbed. Next, there is an upper aluminum electrode layer 130 that is provided covered by a nitride layer (not shown), which provides structural integrity to the upper electrode plate. The layers 128-130 are fabricated with corrugated portions 123 that are folded by the movement of the top plate 122.

    By providing a potential difference between the two aluminum layers 119 and 130, the upper plate 122 is pulled to the lower aluminum layer 119, thereby allowing the upper plate 122 to move toward the lower plate 119. Thereby, in addition to air being discharged from the side air holes, for example, 133, energy is stored in the folded spring device 123. The ink is then sucked into the nozzle chamber as a result of the bending of the meniscus on the ink discharge hole 112 (FIG. 22). Subsequently, the potential difference between the plates is eliminated, and the folded spring 123 quickly returns the plate 122 to its rest position. When the plate 122 returns quickly, ink is consequently discharged from the nozzle chamber through the ink discharge holes 112 (FIG. 22). In addition, air flows through the air gap 133 below the plate 122.

    The ink jet nozzle of this embodiment can be formed by using semiconductor manufacturing and MEMS technology. FIG. 24 is an exploded perspective view showing various layers in the final construction state of the nozzle device 110. All other processing steps are performed on the bottom layer of the silicon wafer 117. On the top surface of the silicon layer 117 is a CMOS circuit layer 118 constructed primarily from glass. Above this layer is a nitride passivation layer 120, which is primarily used to passivate and protect the underlying glass layer from the sacrificial processes used in building subsequent layers. ing. Next, an aluminum layer 119 is disposed. The aluminum layer 119 can also form part of the lower CMOS glass layer 118. This layer 119 constitutes the bottom plate. Next, two PTFE layers 126 and 128 are provided, and a sacrificial layer such as glass is provided between the layers. The sacrificial layer is then etched away, producing plate 122 (FIG. 23). Over the PTFE layer 128, an aluminum layer 130 is disposed, followed by a thicker nitride layer (not shown). The nitride layer can structurally hold the upper electrode and prevent the electrode from being deformed or sagging. After this layer is an upper nitride nozzle chamber layer 135 that forms an ink refill groove with the remainder of the nozzle chamber. This layer 135 is formed by disposing and etching a sacrificial layer, followed by a nitride layer, and etching the nozzle and the etching hole using an appropriate mask before the sacrificial material is removed by etching.

    Obviously, the print head can be constructed from a large array of nozzle devices 110 on a single wafer, which is then chopped and separated into print heads. The ink refill can be formed through the side of the wafer or through the wafer using a deep anisotropic etching system, such as a high density low pressure plasma etching system available from Surface Technology Systems. Further, the corrugated portion 123 can be formed using a halftone mask process.

    One form of detailed manufacturing process that can be used to manufacture a single inkjet printhead that operates based on the main teachings of this embodiment can be performed while performing the following steps.

    1. The double-side polished wafer is used to complete a 0.5 micron single layer polysilicon two layer metal CMOS process. This step is shown in FIG. For clarity, these charts are shown on a knot scale and do not represent a cross section of the nozzle in a single plane. FIG. 25 shows key displays showing various materials and various materials constituting the ink jet structure in the drawings showing these manufacturing processes.

    2. The passivation layer is etched until the bottom electrode that constitutes the second level metal is exposed. This etching is performed using the mask 1. This step is shown in FIG.

    3. Place 50 nm PTFE or highly hydrophobic material.

    4. Place sacrificial material, such as 0.5 micron polyimide.

    5. Place 0.5 micron (sacrificial) photosensitive polyimide.

    6). Using the mask 2, the photosensitive polyimide is exposed and developed. This mask is a gray scale mask that defines the folded end of the upper electrode. As a result of the etching, a series of triangular ridges are formed around the electrodes. If the folded end is used to convert tensile stress to bending strain, the upper electrode can be moved when voltage is applied to the electrode. This step is shown in FIG.

    7. Using the mask 3, the polyimide layer and the passivating layer are etched. Thereby, the contact portion with the upper electrode formed on the second level metal is exposed.

    8). 0.1 micron tantalum is placed to form the top electrode.

9. Silicon nitride (Si ₃ N ₄ ) that forms a movable film of the upper electrode is disposed.

  10. Nitride and tantalum are etched using the mask 4. The mask defines an upper electrode and a contact portion with the upper electrode.

  11. Place 12 micron (sacrificial) photosensitive polyimide.

  12 Using the mask 5, the photosensitive polyimide is exposed and developed. A proximity aligner can be used to increase the depth of focus. The line width of this step is 2 microns or more, but can be 5 microns or more. This mask defines the nozzle chamber walls. This step is shown in FIG.

  Place 13.3 micron PECVD glass. This step is shown in FIG.

  14 Etch 1 micron deep using mask 6. This mask defines the rim of the nozzle. This step is shown in FIG.

  15. Etching down to the sacrificial layer is performed using the mask 7. This mask defines the roof of the nozzle chamber and the nozzle itself. This step is shown in FIG.

  16. The mask 8 is used to back etch completely through the silicon wafer (eg, Surface Technology Systems ASE (using an improved silicon etcher)). This mask defines the ink inlet etched through the wafer.

17. Back etching is performed through the hole in the wafer and through the CMOS oxide layer. This step is shown in FIG.
18. Etch the sacrificial polyimide. This etching cleans the nozzle chamber, creates a gap between the electrodes, and leaves the chips apart. To avoid static friction, a final rinse with supercooled carbon dioxide can be used. This step is shown in FIG.

  19. Mount the printhead on the container. This container may be a molded member made of plastic into which an ink groove for supplying ink of an appropriate color to the ink port on the back surface of the wafer is introduced.

  20. Connect the printhead to the interconnection device. TAB may be used for low profile connections with minimal air flow turbulence. Wire bonding can also be used when operating with sufficient clearance from the paper.

  21. Make the front face of the print head hydrophobic.

  22. The completed printhead is filled with ink and tested. The filled nozzle is shown in FIG.

In the described embodiment of IJ04 F, a stacked electrostatic actuator is provided in which electrodes are alternately sandwiched between compressible polymers. Thus, when the multilayer capacitor is driven, the plates are pulled together to compress the polymer. This stores energy in the compressed polymer. The capacitor is then undriven or drained so that the compressed polymer acts to return the actuator to its home position. Then, ink discharge occurs from the ink discharge port.

    FIG. 37 shows a single nozzle device 310 constructed according to an embodiment. The nozzle device 310 has an ink discharge port 311 for discharging ink on demand, and the ink is discharged from the capacitor chamber 313 stacked from the nozzle chamber 310. In the first design, the stacked capacitor device 313 has a capacitive plate sandwiched between compressible polymers. When electricity is stored in the capacitance plate, the polymer is compressed, so that the actuator 313 looks like a general “accordion” or “concertina”, and its upper surface moves away from the ink discharge port 311. When the sandwich polymer is compressed, energy is stored in the compressed polymer. Subsequently, the capacitor is rapidly discharged, and the energy in the compressed polymer is released upon returning to the polymer rest position. As the actuator returns to its rest position, ink is ejected from the nozzle chamber 312. 38 to 41 schematically show the process. FIG. 38 shows that the nozzle chamber 310 is in its rest position or idle state with a meniscus 314 around the nozzle outlet 311. Subsequently, the electrostatic actuator 313 is driven to enter the contracted state as shown in FIG. As shown in the drawing, the shape of the meniscus 314 changes and the surface tension acts to draw ink around the meniscus inward, and then the ink 316 flows into the nozzle chamber 312 as illustrated.

    After sufficient time, as shown in FIG. 40, capacitor 313 is loaded in preparation for injection (FIG. 41) and meniscus 314 returns to its rest position. Then, as shown in FIG. 41, the capacitor plate 313 is rapidly discharged, and the actuator 313 quickly returns to its origin position. As the actuator returns rapidly, momentum is imparted to the ink in the nozzle chamber 312, causing the ink meniscus 314 to expand and subsequently the ink is ejected from the nozzle chamber 312.

    FIG. 42 is a partial perspective view of the actuator 313 partially disassembled. The actuator 313 has a series of plates 320, 321 with a compressible material 322 sandwiched between them, for example, a styrene-ethylene-butylene-styrene block copolymer. It is. One group of electrodes, eg 320, 323, 325, protrudes on one side of the stacked capacitor arrangement, and a second group of electrodes, eg, 321, 324, on the second side of the electrostatic actuator. It protrudes. One end of the electrode is connected to the first conductive material 327, and the other electrodes, for example, 321 and 324, are connected to the second conductive material 328 (FIG. 37). The two conductive materials 327, 328 are electrically isolated from each other and they are alternately connected to the lower signal and drive layers, as will become apparent soon.

Further, the capacitor device 313 to be laminated may be formed of another thin film material instead of the styrene-ethylene-butylene-styrene block copolymer as an example. These materials are
1)
Piezoelectric materials such as PZT 2)
Electrostrictive materials such as PZLT 3)
For example, a material that can be electrically switched between a ferroelectric phase such as PLZSnT and an antiferroelectric phase.

Importantly, the electrode actuator 313 can be rapidly constructed using chemical vapor deposition (CVD) techniques. Various layers 320, 321, and 322 are alternately disposed on a flat wafer so as to cover the entire surface of the wafer. The stacking operation can be completed quickly by using CVD technology. The two sets of electrodes are preferably arranged using separate metals. For example, aluminum or titanium can be used as a material for the metal layer. The use of different metal layers enables selective etching using a mask layer, and a structure as shown in FIG. 42 can be formed. For example, a CVD sandwich is first placed, and then a series of selective etches using an appropriate mask to produce the entire multilayer capacitor structure. The use of the CVD process substantially increases the manufacturing efficiency of the multilayer capacitor device.
Construction of ink nozzle device

    FIG. 43 shows an exploded perspective view showing the construction of a single inkjet nozzle based on the example. The inkjet nozzle 310 is constructed on a standard silicon wafer 330, and a data driving circuit constructed by a method such as a normal CMOS layer 311 such as a two-level metal CMOS layer 311 is constructed on the silicon wafer. ing. Above the CMOS layer 311, a nitrided passive layer 332 is built to provide passive protection against the use of etching that would otherwise dissolve the underlying layer during operation. The various layers 313, eg 320, 321, 322 of the stacking device 313 can be placed using CVD techniques. The stacked device 313 is constructed using the manufacturing steps described above, including selectively etching using the appropriate mask described above to manufacture the entire multilayer capacitor structure. Further, a circuit connection between the electrodes 327 and 328 and the CMOS layer 331 is provided. Finally, a nitride layer 333 is provided and a post, eg 335, is formed in the nozzle chamber wall, eg 334, one open wall of the nozzle chamber. The surface layer 337 of the layer 333 can be disposed on the sacrificial layer. The sacrificial layer is then etched to form the nozzle chamber 312 (FIG. 37). For this purpose, the upper layer 337 has an etching hole, for example, 338 in addition to the ink discharge hole 311 to speed up the etching process. The diameter of the etching hole, for example, 338 is sufficiently smaller than that of the ink discharge hole 311. If necessary, an additional nitride layer is provided over layer 320 and the sacrificial material is etched to form nozzle chamber 312 (FIG. 37) and during operation of the inkjet nozzle. 313 may be protected.

    One form of a detailed manufacturing process that can be used to manufacture a monolithic inkjet printhead that operates based on the main teachings of this embodiment can be performed while performing the following steps.

    1. Using a double-side polished wafer, a 0.5 micron single poly 2 metal CMOS process is completed. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 44 is a heading showing the various materials of these recipes and the cross-reference inkjet configuration.

    2. Using the mask 1, the CMOS oxide layer is etched until it reaches the second level metal. This mask defines a contact via from the electrostatic laminate to the drive circuit.

    3. Place 0.1 micron aluminum.

    4. Place 0.1 micron elastomer.

    5. Place 0.1 micron tantalum.

    6. Place 0.1 micron elastomer.

    7. Steps 2-5 are repeated 20 times to produce an 8 micron surrogate metal and elastomer laminate using 40 metal layers and 40 elastomer layers. This step is shown in FIG.

    8). The stacked body is etched using the mask 2. This leaves a separate, square, multilayer stack in each nozzle. This step is shown in FIG.

  9. A resist is applied, and exposure and development are performed using the mask 3. This mask defines one side of the stack. This step is shown in FIG.

  10. Etch the exposed elastomer layer to a horizontal depth of 1 micron.

  11. The exposed aluminum layer is wet etched to a horizontal depth of 3 microns.

  12 The exposed elastomer layer is bubbled by 50 nm to fill the remaining 0.1 micron gap in the etched aluminum.

  13. Strip the resist. This step is shown in FIG.

  14 A resist is applied, exposed using the mask 4 and developed. This mask defines the opposite side of the stack. This step is shown in FIG.

  15. Etch the exposed elastomer layer to a horizontal depth of 1 micron.

  16. The exposed tantalum layer is wet etched to a horizontal depth of 3 microns.

  17. The exposed elastomer layer is bubbled by 50 nm to fill the remaining 0.1 micron gap in the etched aluminum.

  18. Strip the resist. This step is shown in FIG.

  19. Place 1.5 micron tantalum. This metal contacts all aluminum layers on one side of the stack and all tantalum layers on the other side of the stack.

  20. Tantalum is etched using the mask 5. This mask defines the electrodes at both ends of the stack. This step is shown in FIG.

  21. Place 1818 micron sacrificial material (eg, photosensitive polyimide).

  22. The sacrificial layer is exposed and developed using the mask 6 and the proximity aligner. This mask defines the nozzle chamber walls and the inlet filter. This step is shown in FIG.

  Place 23.3 micron PECVD glass.

  24. Etch to a depth of 1 micron using mask 7. This mask defines the rim of the nozzle. This step is shown in FIG.

  25. Etch down to the sacrificial layer using the mask 8. This mask defines the roof of the nozzle chamber and the nozzle itself. This step is shown in FIG.

  26. The mask 9 is used to completely back-etch through the silicon wafer (eg, Surface Technology Systems' ASE (using an improved silicon etcher)). This mask defines an ink port etched through the wafer. By this etching, the wafer also becomes a dice. This step is shown in FIG.

  27. Back etching is performed through the hole in the wafer and through the CMOS oxide layer.

  28. Etch the sacrificial material. This etching cleans the nozzle chamber and separates the chips. This step is shown in FIG.

  29. Mount the printhead on the container. This container may be a molded member made of plastic into which an ink groove for supplying ink of an appropriate color to the ink port on the back surface of the wafer is introduced.

  30. Connect the printhead to the interconnection device. A TAB may be used to connect with a low profile in a manner that minimizes airflow obstruction. Wire bonds can also be used if the printer operates with sufficient clearance from the paper.

  31. Make the front face of the print head hydrophobic.

  32. The completed printhead is filled with ink and tested. The filled nozzle is shown in FIG.

Description of IJ05 F An embodiment of the present invention utilizes a magnetic actuator to “load” the spring, and when the magnetic actuator is undriven , the spring drops into the ink drop when returning to its origin position. Will be discharged.

    FIG. 59 is an exploded perspective view of the ink nozzle device 401 constructed based on the embodiment. The embodiment can be constructed as an array of nozzle devices 401 to form printing lines together.

    The operation of the ink nozzle device 401 in FIG. 59 is performed by a solenoid 402 that is driven by a drive circuit 403 when an ink droplet is to be printed. The driven solenoid 402 has a magnetic field in a fixed soft magnetic pole 404 and a movable soft magnetic pole 405. When the maximum current flows through the solenoid, the movable pole 405 moves sufficiently from its rest position to a stop position close to the fixed magnetic pole 404. The ink nozzle device 401 of FIG. 59 is placed in an ink chamber filled with ink. Therefore, a hole 406 is provided in the movable soft magnetic pole 405 to “spout” ink from around the coil 402 when the plate 405 is moving.

    The movable soft magnetic pole is balanced via the piston head 409 and the fulcrum 408. The movement of the magnetic pole 405 approaching the stationary magnetic pole 413 moves the piston head 409 away from the nozzle chamber 411 and draws air into the chamber 411 through the ink discharge hole 413. The piston 409 is thus held open on the nozzle chamber 411 by maintaining a low “hold” current through the solenoid 402. The holding level current flowing through the solenoid 402 is sufficient to hold the movable pole 405 with respect to the fixed soft magnetic pole 404. Since the gap between the two poles 404 and 405 is minimal, the current level is substantially less than the maximum current level. For example, a hold level current of 10 percent of the maximum current level is appropriate. During this operation phase, the meniscus in the nozzle tip or the ink discharge hole 413 has become a concave hemisphere due to the flow of air. The surface tension on the meniscus exerts a force on the ink, causing ink to flow from the ink chamber into the nozzle chamber 411. This refills the nozzle chamber with ink that fills the volume created by the retracted piston head 409. This step is about 100 microseconds.

    The current in solenoid 402 is then reversed to half the maximum current. The magnetic pole is demagnetized by the reverse rotation, and the piston 409 starts to return to its rest position. The piston 409 is twisted by the repulsive action of both magnets and the movement of the movable pole 405, and is moved to its normal rest position by the energy stored in the torsion springs 416 and 419 under stress.

    As a result of the reverse current and the springs 416, 419, the force acting on the piston 409 is maximized at the start of movement of the piston 409 and decreases when the spring's elastic stress falls to zero. As a result, the acceleration of the piston 409 is high at the beginning of the reverse stroke, and the resulting ink speed in the chamber 411 is uniform during the stroke. This increases the operating allowance before ink flow occurs on the printhead surface.

    At a predetermined time between return strokes, the reverse current of the solenoid stops. The current is stopped when the residual magnetism of the movable pole becomes minimum. The piston 409 continues to move toward its origin rest position.

    The piston 409 overshoots the stationary or resting position due to its inertia. Piston movement overshoot accomplishes two things: greater volume and velocity of ejected drops, and better drop separation when the piston returns to its rest position from overshoot. .

    The piston 409 eventually returns from its overshoot to its rest position. This return is now provided by springs 416, 419, which are now loaded in the opposite direction. The return of the piston causes some reverse “sucking” of ink into the nozzle chamber 411, thereby reducing the ink bond that connects the ink droplets with the ink in the nozzle chamber 411. The ink drop is separated from the ink in the nozzle chamber 411 by the forward speed of the ink drop and the backward speed of the ink in the nozzle chamber 411.

    The piston 409 remains in the rest position until the next drop ejection cycle.

    The liquid ink print head has one ink nozzle device 401 associated with each of a number of nozzles. The apparatus 401 has the following main parts.

    (1) A drive circuit 403 that drives the solenoid 402.

    (2) Nozzle tip 413. The diameter of the nozzle tip 413 is important in determining the speed and size of the drop.

    (3) Piston 409. This is a cylinder that moves through a nozzle chamber 411 that discharges ink. The piston 409 is connected to one end of the level arm 417. The radius of the piston is about 1.5 to 2 times the radius of the hole 413. The volume of the output ink drop is largely determined by the amount of ink moved by the piston during the return stroke of the piston.

    (4) Nozzle chamber 411. The nozzle chamber 411 is slightly wider than the piston 409. The gap between the piston 409 and the nozzle chamber wall is small enough to ensure that the piston does not contact the nozzle chamber during its drive or return. If the printhead is manufactured using 0.5 micron semiconductor lithography, a 1 micron gap is usually sufficient. The nozzle chamber has such a depth that the air sucked through the nozzle tip 413 does not reach the piston 409 when the plunger 409 returns to its rest position. If air reaches the piston, a cylindrical surface is formed by the sucked bubbles instead of a hemispherical surface, and the nozzle cannot properly refill the ink.

    (5) Solenoid 402. This is a spiral copper coil. Copper is used because of its low resistance and high electrophoretic resistance.

    (6) A fixed magnet pole 404 made of a ferromagnetic material.

    (7) A movable magnet pole 405 made of a ferromagnetic material. In order to generate the maximum magnetic force, the movable magnet pole 405 and the fixed magnet pole 404 surround the solenoid 402 as a torus. Thus, the loss of magnetic flux is minimized. Further, the magnetic flux is concentrated across the gap between the movable magnet pole 405 and the fixed pole 404. The movable magnet pole 405 has a hole 406 (FIG. 59) on the surface of the solenoid 402 so as to let the confined ink escape. These holes are shaped and arranged to minimize the effect on the magnetic force generated between the movable magnet pole 405 and the fixed magnet pole 404.

    (8) Magnet gap. The gap between the fixed plate 404 and the movable magnet pole 405 is one of the most important “portions” of the print actuator. The size of the gap greatly affects the generated magnetic force and limits the stroke of the movable magnet pole 405. A small gap is desirable to generate a strong magnetic force. The stroke of the piston 409 is related to the stroke of the movable magnet pole 405 (and thus the gap) by the lever arm 417.

    (9) Length of the lever arm 417. The lever arm 417 optimizes the stroke of the piston 409 and the movable magnet pole 405 independently. There is a movable magnet pole 405 at the short end of the lever arm 417. At the long end of the lever arm 417 is a piston 409. Spring 416 is at fulcrum 408. In order to minimize the magnet gap, the optimum stroke for the movable magnet pole 405 is 1 micron or less. The optimum stroke of the piston 409 is about 405 micrometers for a 1200 dpi printer. The optimum stroke difference is resolved by taking the leverage 417 at a ratio of 5: 1 or more in its length.

    (10) Springs 416, 419 (FIG. 59). A spring, for example 416, returns the piston to its rest position after deactivating the actuator. Spring 416 is at the fulcrum 408 of the lever arm.

(11) Passive layer (not shown). The aluminium layer is preferably coated with a passive layer such as silicon nitride (Si ₃ N ₄ ), diamond such as carbon (DLC) or other chemically inert and impermeable layers. Since the device is immersed in ink, the passive layer is particularly important for the lifetime of the device. As is apparent from the above description, it is advantageous to eject the droplet when the solenoid 402 is de-energized. This advantage comes from the acceleration of the moving magnet pole 405 used as a piston or plunger.

    The force generated by the movable magnet pole 405 by the electromagnetic induction field is inversely proportional to the square of the gap between the movable magnet pole 405 and the stationary magnet pole 404. This gap is maximized when the solenoid 402 is turned off. When the solenoid 402 is turned on, the movable magnet pole 405 is attracted to the stationary pole 404. As the gap decreases, the force increases and the movable magnet pole 405 is accelerated faster. The speed increases in a very non-linear manner, almost square of time. While the drive is released and the movable magnet pole 405 is moving in the opposite direction, the acceleration of the movable magnet pole 405 is initially maximum and decreases as the spring elastic stress becomes zero.

    As a result, the speed of the movable magnet pole 405 becomes more uniform during the return stroke operation.

    (1) The speed of the piston or plunger 409 will be more uniform during the duration of the drop discharge stroke.

    (2) The piston or plunger 409 easily and completely leaves the ink chamber during the ink refill stage. Thereby, the nozzle replenishment time can be reduced, and the print head can be operated more quickly.

    However, this approach has several disadvantages in direct injection with actuators.

    (1) The stress of the spring 416 is relatively large. Careful design is required to ensure that the spring is used below the yield of the material used for the spring.

    (2) The solenoid 402 needs to be supplied with a “hold” current during the nozzle refill time. The holding current is typically less than 10 percent of the solenoid drive current. However, the nozzle refill time is typically about 50 times the drop ejection time. Therefore, the holding energy typically exceeds the solenoid driving energy.

    (3) The operation of the actuator is more complicated due to the requirement of the “hold” phase.

    The print head is made from two silicon wafers. The first wafer is used to produce the print nozzle (print head wafer), and the second wafer (ink groove wafer) provides the first groove support means, as well as various ink grooves. Used for.

    The manufacturing process is as follows.

(1) Start with a single crystal silicon wafer 420 embedded with a silicon epitaxial layer 422 heavily doped with boron. Boron should preferably be added over 10 ²⁰ atoms per cm ³ over a thickness of about 3 micrometers. Boron should be added using appropriately selected active semiconductor device technology. The wafer diameter of the printhead wafer should be the same as that of the ink groove wafer.

    (2) The drive transistor and data distribution circuit 403 is manufactured based on the selected process (for example, CMOS).

    (3) The wafer 420 is planarized using a chemical mechanical planarization process (CPM).

(4) 5 micron glass (SiO ₂ ) is placed on the second layer metal.

    (5) Etch the two levels to the top oxide layer using a dual damascus process. Level 1 is 4 microns deep and level 2 is 5 microns deep. Level 2 is in contact with the second level metal. Use a mask for a stationary magnet pole.

(6) A 5 micron nickel iron alloy (NiFe) is disposed.
(7)
Using MP, the wafer is planarized to the level of SiO ₂ to generate magnet poles 404.

(8) Silicon nitride (Si ₃ N ₄ ) of 0.1 microns is disposed.

(9) Si ₃ N ₄ is etched for the via hole for connecting to the solenoid and the nozzle chamber region 411.

(10) Arrange 4 microns of SiO ₂ .

(11) Plasma etching of SiO ₂ using a solenoid and a support column mask.

    (12) A thin diffusion barrier such as Ti, TiN or TiW is disposed. If the selected diffusion barrier does not adhere well, an adhesion layer is placed.

(13) 4 micron copper is placed to form the spring post 424 and solenoid 402; The placement is performed by sputtering, CVD, or electroless plating. Copper not only has a lower resistance than aluminum, but also has a sufficiently high resistance to electrophoresis. The electrophoretic resistance is important because the current density is required on the order of 3 × 10 ⁶ amperes / cm ² . It has been found that copper films placed by low energy kinetic ion sputtering have an electrophoretic lifetime 1000 to 10,000 times greater than aluminum silicon alloys. The placed copper is alloyed and layered to have a maximum electrophoretic lifetime than the silicon alloy. The placed copper should be alloyed and layered to have maximum electrophoretic resistance in a manner that retains high electrical conductivity.

(14) Planarize wafer using CMP until the level of SiO ₂ is reached. The Damascus process is used for copper because it is difficult to etch copper. However, since the damascus insulator layer is substantially removed, the process is actually simpler if standard placement / etching cycles are used instead of damascus. However, it should be appreciated that the aspect ratio of the copper etch is only 4: 1 for the damascus oxide etch, compared to 8: 1 for this design. This difference arises from the fact that the copper is 1 micron wide and 4 microns thick, but only 0.5 microns apart. The Damascus process can also reduce lithography difficulties because the resist is on oxide and not metal.

(15) Plasma etching is performed so that the nozzle chamber 411 is stopped by the boron-added epitaxial silicon layer 421. This etch penetrates approximately 13 microns of SiO ₂ and 8 microns of silicon. This etch is highly anisotropic with side walls that are nearly vertical. Etching is stopped by detecting boron in the exhaust gas. If this etch is selective to NiFe, the mask for this step and the next step can be combined. Thereby, the next step can be omitted. This step etches down the edge of the printhead wafer to the boron layer to prepare for later separation.

(16) Etch the SiO ₂ layer. This is only to remove the area above the NiFe fixed magnet pole. Therefore, if Si and SiO ₂ are selectively etched with respect to NiFe, they can be removed by the aforementioned steps.

(17) High density Si ₃ N ₄ is uniformly arranged. This constitutes a corrosion barrier. Therefore, pinholes are not generated and are impermeable to OH ions.

(18) A thick sacrificial layer 440 is disposed. This layer completely fills the nozzle chamber, completely coats the wafer, and coats with an additional 8 micron thickness. The sacrificial layer is SiO _2.

    (19) Etch the sacrificial layer at two depths for a dual damascus process. Deep etching is 8 microns and shallow etching is 3 microns. The mask defines a piston 409, a lever arm 417, a spring 416 and a movable magnet pole 405.

(20) Uniformly arrange 0.1 micron high density Si ₃ N ₄ . This constitutes a corrosion barrier. Therefore, pinholes are not generated and are impermeable to OH ions.

    (21) An 8 micron nickel iron alloy (NiFe) is placed.

(22) Planarize wafer using CMP until the level of SiO ₂ is reached.

(23) Silicon nitride (Si ₃ N ₄ ) of 0.1 microns is placed.

(24) Etch all Si ₃ N ₄ except the tip of the plunger.

    (25) Open the bond pad.

    (26) Permanently bond the wafer onto the previously made ink groove wafer. The operating side of the print head wafer faces the ink groove wafer. Since the ink groove wafer is already etched into the separated ink groove chips, the ink groove wafer is attached to the back plate.

    (27) The printhead wafer is etched to the level of the boron-added epitaxial layer 422 to completely remove the back silicon. This etching is performed by batch wet etching in ethylenediamine pyrocatechol (EDP).

    (28) Mask the nozzle rim 414 from below the print head wafer. The mask also includes a tip end.

    (31) The boron added silicon layer 422 is etched through to form nozzle holes. This etch also etches the sacrificial material in the nozzle chamber sufficiently deep and reduces the time required to remove the sacrificial layer.

(32) Completely etch the sacrificial layer. This material if SiO _2, HF etch is used. Nitride coatings on various layers protect glass insulator layers and other materials in the device from HF etching. HF access to the sacrificial layer material is performed through the nozzle and simultaneously through the ink groove tip. The effective depth of etching is 21 microns.

    (33) The chip is separated from the back plate. Each chip is now a full print head including ink grooves. The two wafers have already been etched through, so the print head does not need to be shredded.

    (34) Test the print head and bond the TAB to a good print head.

    (35) Hydrophobize the front surface of the print head.

    (36) The TAB bonded print head is finally tested.

    FIG. 60 is a partially exploded perspective view of a single inkjet nozzle device constructed according to the embodiment.

      One variation of the detailed manufacturing process that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps: .

    1. A 3 micron epitaxial silicon to which boron is heavily added is placed on the wafer polished on both sides.

    2. Depending on the CMOS process used, p-type or n-type 10 micron epitaxial silicon is placed.

    3. Complete 0.5 micron single layer polysilicon two layer metal CMOS process. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 61 is a heading showing various materials in these manufacturing drawings.

    4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines a contact via from the nozzle chamber, the end of the printhead chip, the aluminum electrode to the two-piece fixed magnetic plate.

    5. Using the oxide from step 4 as a mask, the silicon is etched until it reaches the buried layer doped with boron. This etching does not substantially etch the aluminum. This step is shown in FIG.

6). A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux density of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
Apply a 7.4 micron resist, and use mask 2 to expose and develop. The mask defines a split fixed magnetic plate and a nozzle chamber wall. Further, the resist acts as an electroplating mold by this mask. This step is shown in FIG.

    8.3 micron CoNiFe is electroplated. This step is shown in FIG.

    9. Strip the resist and etch the exposed seed layer. This step is shown in FIG.

10. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).

  11. The nitride layer is etched using the mask 3. This mask defines a contact via from each end of the solenoid coil to the two-part fixed magnetic plate.

  12 Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities.

  A 13.5 micron resist is applied, and using the mask 4, it is exposed and developed. The mask defines a solenoid helical coil, a nozzle chamber wall, and a spring post where the resist acts as an electroplating mold. This step is shown in FIG.

  Electroplate 14.4 micron copper.

  15. Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.

  16. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.

  17. Place 0.1 micron silicon nitride.

  18. Etch sacrificial material of 1 micron. This layer defines the gap of the magnet.

  19. The sacrificial material is etched using the mask 5. This mask defines the spring struts and nozzle chamber walls. This step is shown in FIG.

  20. A seed layer of CoNiFe is placed.

  21. Apply 4.5 micron resist. The mask 6 is used for exposure and development. This mask defines the walls of the magnetic plunger, the lever arm, the nozzle chamber wall and the spring struts. This resist forms an electroplating mold for these members. This step is shown in FIG.

  Electroplate 22.4 micron CoNiFe. This step is shown in FIG.

  23. A seed layer of CoNiFe is placed.

  A resist of 24.4 microns is applied, and using the mask 7, it is exposed and developed. The mask defines a magnetic plunger roof, nozzle chamber walls, leverage arms, springs, and spring struts. The resist forms an electroplating mold for these members. This step is shown in FIG.

  Electroplate 25.3 micron CoNiFe. This step is shown in FIG.

  26. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the silicon layer to which boron is added. This step is shown in FIG.

  27. Using the mask 8, the silicon layer doped with boron is plasma back etched to a depth of 1 micron. This mask defines the rim of the nozzle. This step is shown in FIG.

  28. Using the mask 9, plasma back etching is performed through the layer to which boron is added. This mask defines the nozzle and the end of the chip. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.

  29. Detach the chip from the glass blank. Strip all adhesive layer, resist layer, sacrificial layer and exposed seed layer. This step is shown in FIG.

30. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
31. Connect the printhead to the relay device.
32. Hydrophobize the front surface of the print head.
33. Fill the completed printhead with ink and test. A nozzle filled with ink is shown in FIG.

Description of IJ06 F FIG. 79 shows a cross-sectional view of a single ink nozzle unit 510 constructed according to the embodiment. The ink nozzle unit 510 has an ink discharge nozzle 511 provided in the nozzle chamber 513 for discharging ink. Ink is discharged from the nozzle chamber 513 by the movement of the huddle 515. The huddle 515 operates in a magnetic field 516 that runs along the plane of the huddle 515. The paddle 515 has at least one solenoid coil 517 driven under the control of the nozzle drive signal. The paddle 515 is driven by the well-known principle of force generated by the movement of charge in the magnetic field. Therefore, when the paddle 515 is driven to discharge ink droplets from the ink discharge nozzle 511, the solenoid coil 517 is driven. As a result of the drive, one end of the paddle receives a downward force 519 while the other end of the paddle receives an upward force 520. The downward force 519 causes a corresponding movement of the huddle and ejects the ink.

    As can be seen from the cross-sectional view of FIG. 79, paddle 515 has multiple layers of solenoid wires. The solenoid wire, for example 521, constitutes a complete circuit in which current flows counterclockwise around the center of the paddle 515. As a result, the paddle 515 rotates around an axis passing through the center point (shown in FIG. 80). This rotation is assisted by a torsion spring, eg 522. The torsion spring acts to return the paddle 515 to its rest position after the current of the paddle 515 stops. The torsion spring 522 is desirable, but other spring shapes such as leaf springs may be used.

After the ink is discharged, the nozzle chamber 513 is replenished with the surface tension of the ink of the discharge nozzle 511.
Manufacturing Construction Method Inkjet nozzles are constructed using microelectronics manufacturing techniques well known to engineers in the technical field of semiconductor manufacturing. For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in

    Based on one form of construction, two wafers are utilized. A wafer on which the drive circuit and the inkjet printing nozzle are assembled, and another wafer on which the ink grooves are assembled.

FIG. 81 shows an exploded perspective view of a single inkjet nozzle constructed based on the embodiment. Construction begins with a silicon wafer 540 on which an epitaxial boron doped layer 541 and an epitaxial silicon layer 542 are assembled. The boron layer is preferably added at a concentration of 10 ²⁰ / cm ³ or higher and is about 2 microns thick. The silicon epitaxial layer is constructed with a thickness of about 8 microns and is added in a manner suitable for active semiconductor device technology.

    Next, the drive transistor and distribution circuit are built based on the selected manufacturing process, resulting in CMOS logic and drive transistor level 543. A silicon nitride layer 544 is then disposed.

    The paddle metal layer is constructed using the Damascus process, a well-known process using chemical polishing techniques (CMP). The chemical polishing technique (CMP) is well known as an application of multilayer metal. The solenoid coil of the paddle 515 (FIG. 79) is composed of double layers, and the first layer is manufactured using a single damascus process.

    Next, the second layer 546 is deposited using a dual damascus process. Copper layers 545 and 546 have connection posts 547 and 548 that connect the electromagnetic coils to CMOS 543 through vias in silicon nitride layer 544 (not shown). However, the metal post portion has a via (connection hole) that connects it to the lower copper layer. The Damascus process ends with a planarized glass layer. The glass layer produced during the use of the Damascus process utilizing the arrangement of layers 543 and 546 is shown as one layer 575 in FIG.

Subsequently, paddles are formed and separated from the adjacent glass layers by plasma etching, which is down-etching to the stop layer 580 position. Further, the nozzle chamber 513 under the paddle is formed by silicon anisotropic wet etching that performs down etching to the boron layer 541. A passive layer is then formed. The passive layer can be formed from a similar diamond layer such as carbon or a dense Si ₃ N ₄ coating, and the paddle must be present in highly corrosive environmental water and ink, so this The coating provides a protective layer for the paddle and its surroundings.

    Next, the silicon wafer is back-etched so as to penetrate the boron-added layer and the discharge hole 511, and a discharge hole rim 550 (FIG. 79) is generated using an etching process.

    One variation of the detailed manufacturing process that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps: .

    1. A 3 micron epitaxial silicon to which boron is heavily added is placed on the wafer polished on both sides.

    2. Depending on the CMOS process used, p-type or n-type 10 micron epitaxial silicon is placed.

3. Complete 0.5 micron single layer polysilicon two layer metal CMOS process. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 82 is a heading showing various materials in these manufacturing drawings and various materials in the cross-reference inkjet structure.
_4. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).
5. The nitride layer is etched using the mask 1. The mask defines a contact via from the solenoid coil to the second level metal contact.
6). Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities.
Apply 7.3 micron resist, and use mask 2 to expose and develop. This mask defines the first level coil of the solenoid. The resist acts as an electroplating mold. This step is shown in FIG.
8. Electroplate copper of 2 microns.
9. Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.
10. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).

  11. The nitride layer is etched using the mask 3. This mask defines the contact bias between the first and second levels of the solenoid.

12 Place a copper seed layer.
A 13.3 micron resist is applied, and using the mask 4, it is exposed and developed. This mask defines the second level coil of the solenoid. The resist acts as an electroplating mold. This step is shown in FIG.

  14. Electroplate copper of 2 microns.

  15. Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.

16. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.
17. Place 0.1 micron silicon nitride.

  18. The nitride layer and the CMOS oxide layer are etched using the mask 5 until reaching the silicon. This mask defines a nozzle chamber mask for crystal wet etching and the end of the printhead chip. This step is shown in FIG.

  19. Crystallographic etching is performed on the exposed silicon using KOH. This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. Depending on the design of the mask 5, the bottom of the silicon is cut out in such a way that a clearance is provided in the paddle for rotation downward.

  20. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.

21. Using the mask 6, the silicon layer doped with boron is plasma back etched to a depth of 1 micron. This mask defines the rim of the nozzle. This step is shown in FIG.
22. Plasma back etching is performed using the mask 7 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
23. The adhesive layer is peeled off and the chip is separated from the glass blank. This step is shown in FIG.
24. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
25. Connect the printhead to the relay device.
26. Hydrophobize the front surface of the print head.
27. Fill with ink, apply a strong magnetic field to the surface of the chip and test against the finished printhead. A nozzle filled with ink is shown in FIG.

Description IJ07 F FIG. 94 shows a cross-sectional perspective view 601 of a single nozzle constructed according to the technique of the example.

    Each nozzle 601 has a nozzle discharge hole 602 through which ink is discharged from the nozzle chamber 604 when the electromagnetic piston 605 is driven. The electromagnetic piston 605 is driven via a solenoid coil 606 surrounding the piston 605. When a current flows through the solenoid coil 606, the piston 605 receives a force in the direction indicated by 613. When the piston 605 moves toward the discharge hole 602, a moment is applied to the ink in the nozzle chamber 604. A torsion spring, for example 608, restrains the movement of the piston 605, but does not completely stop the movement of the piston 605.

    When the discharge cycle is complete, the current to coil 606 is cut so that the torsion spring, eg 608, acts to return piston 605 to its rest position initially shown in FIG. Subsequently, surface tension acts on chamber 604 to replenish ink and prepare for "re-injection".

    Current to the coil 606 is supplied via an aluminum connector (not shown) that connects the coil 606, the semiconductor drive transistor, and the logic layer 618.

Construction The liquid inkjet print head 601 has one actuator device associated with each of a number of nozzles. Obviously, the actuator 601 has the following major components constructed using standard semiconductor manufacturing techniques and micromechanical manufacturing techniques.

  1. Drive circuit 618.

  2. Nozzle discharge hole 602. The radius of the nozzle discharge hole 602 is an important matter for drop speed and drop size.

  3. Magnet piston 605. A cylinder made of a rare earth magnet material such as neodymium iron boron (NeFeB) or samarium cobalt (SaCo). The piston 605 is magnetized after the last high temperature step in the printhead manufacture so that the Curie temperature is not exceeded after magnetization. A typical printhead has thousands of pistons that are simultaneously magnetized in the same direction.

4). Nozzle chamber 604. The nozzle chamber 604 is slightly wider than the piston 605. The gap between the piston 605 and the nozzle chamber 604 is so small that the piston never contacts the nozzle chamber while the piston is returning. If the printhead was manufactured using a standard 0.5 micron lithographic process, a 1 micron gap is usually sufficient. The nozzle chamber 604 is sufficiently deep so that air drawn through the nozzle tip 602 does not reach the piston when the plunger returns to its rest position. If reached, the sucked air will not form a hemispherical surface, but a cylindrical surface and the nozzle chamber 604 will not be properly refilled.
5. Solenoid coil 606; This is a copper spiral coil. In order to obtain a strong magnetic force with a small device radius, a double layer helix is used. Copper is used due to its low resistance and high electrophoretic resistance.
6). Spring 608-611. Springs 608-611 return piston 605 to its rest position after drop 603 has been ejected. The spring can be made from silicon nitride.
7). Passive layer. All surfaces are coated with a passive layer. The passive layer consists of silicon nitride (Si ₃ N ₄ ), diamond-like carbon (DLC) or other chemically inert and highly impervious layers. The passive layer is particularly important for the lifetime of the device because the drive device is immersed in the ink.

Example of Manufacturing Method The print head is manufactured from two silicon wafers. The first wafer is a wafer (print head wafer) used for assembling the print head nozzles, and the second wafer (ink groove wafer) provides support means for the first groove, and various ink grooves. Is used to form FIG. 95 is an exploded perspective view showing a state in which a single inkjet nozzle 601 is constructed on the print head. The assembly process is as follows.

We start with a single silicon wafer embedded with a silicon epitaxial layer 621 heavily doped with boron. Boron is preferably added at a concentration of 10 ²⁰ atoms / cm ³ or more and is about 3 microns thick. On top of the boron-doped layer 621 is an epitaxial layer 622 of lightly boron doped silicon 622 that is about 8 microns thick, and boron is added in a manner appropriate to the selected active semiconductor device technology. Is done. This is the starting point of the print head wafer. The wafer diameter is equal to the ink groove wafer diameter.

    Next, the drive transistors and data distribution circuits required for each nozzle are fabricated based on the process selected, up to the oxide on the first level metal in the standard CMOS layer 618. A silicon nitride passivation layer 625 is disposed on the CMOS layer 618. Next, the silicon oxide layer 627 is disposed, and the silicon oxide layer 627 is etched using a mask for the copper coil layer. Subsequently, the copper layer 630 is disposed via a copper coil mask. Layers 627 and 625 also have vias (not shown) for connecting copper coil layer 630 and underlying CMOS layer 618. Next, the nozzle chamber 604 (FIG. 94) is etched. A sacrificial material is then placed to completely fill the etched volume (not shown). A silicon nitride layer 631 including a site portion 632 is disposed on the sacrificial material. Next, the magnet material layer 633 is disposed using a magnetic piston mask. This layer includes posts, such as 634.

    Using a mask for a magnetic piston and torsion spring, eg 608, the final silicon nitride layer 635 is placed on an additional sacrificial material layer (not shown) that is arranged to cover the exposed portion of the nitride layer 631. Place up to the height of layer 633. Etching the sacrificial material described above produces a torsion spring, eg, 608 and magnetic piston 605 (see FIG. 94).

    For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in

    One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teachings of this embodiment can be performed while performing the following steps.

    1. A 3 micron epitaxial silicon to which boron is heavily added is placed on the wafer polished on both sides.

    2. Depending on the CMOS process used, p-type or n-type 10 micron epitaxial silicon is placed.

3. Complete 0.5 micron single layer polysilicon two layer metal CMOS process. This metal layer has a high current density and as a result can be processed at high temperature, so copper is used instead of aluminum. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 96 is a heading showing various materials in these manufacturing drawings and various materials in the cross-reference inkjet structure.
4. Place 0.5 micron low stress PECVD silicon nitride (Si ₃ N ₄ ). The nitride acts as a dielectric and also acts as an etch stop, copper diffusion barrier, and ion diffusion barrier. Since the printhead operates slowly, it is not important to have a high dielectric constant for the silicon nitride. For this reason, the nitride layer can be made thicker than a submicron CMOS back-end process.

    5. The nitride layer is etched using the mask 1. This mask defines the contact vias from the solenoid coil to the second level metal contact and the nozzle chamber. This step is shown in FIG.

    Place 6.4 micron PECVD glass.

7). The mask 2 is used to etch the glass until the nitride or second level metal is reached. This mask defines the solenoid. This step is shown in FIG.
8). A thin barrier layer of Ta or TaN is disposed.
9. Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities.

  10.4 micron copper is electroplated.

  11. Smoothing is performed using CMP. Steps 4 through 11 represent a copper dual damascus process with a copper aspect ratio of 4: 1 (height 4 microns, width 1 micron). This step is shown in FIG.

  12 Etching is performed using the mask 3 until it reaches silicon. This mask defines the nozzle holes. This step is shown in FIG.

  13. A crystallographic etch is performed on the exposed silicon using KOH. This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is shown in FIG.

  14. Place 0.5 micron low stress PECVD silicon nitride.

  15. Using the mask 4, the bond pad is opened.

  16. Test the wafer. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.

  17. A thick sacrificial layer (eg, low stress glass) is placed to fill the nozzle holes. The sacrificial layer is smoothed to a depth of 5 microns on the nitrided surface. This step is shown in FIG.

  18. Using the mask 5, the sacrificial layer is etched to a depth of 6 microns. This mask defines permanent magnets and magnet support posts. This step is shown in FIG.

  19. A 6-micron permanent magnet material such as neodymium iron boron (NdFeB) is disposed. Smooth. This step is shown in FIG.

  20. Place 0.5 micron low stress PECVD silicon nitride.

  21. The nitride is etched using the mask 6. This mask defines a spring. This step is shown in FIG.

  22. The permanent magnet material is annealed at a temperature corresponding to the material.

  23. The wafer is placed in a uniform magnetic field of 2 Tesla (20,000 Gauss) with a magnetic field perpendicular to the chip surface. Thereby, a permanent magnet is magnetized.

24. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
25. Using the mask 7, the silicon layer doped with boron is plasma back etched to a depth of 1 micron. This mask defines the rim of the nozzle. This step is shown in FIG.
26. Plasma back etching is performed using the mask 8 through the layer to which boron is added. This mask defines nozzles and chip edges.
27. The nitride is plasma back etched through the holes in the silicon layer doped with boron to the glass sacrificial layer. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
28. The adhesive layer is peeled off and the chip is separated from the glass blank.
29. Etch the sacrificial glass layer with buffered HF. This step is shown in FIG.
30. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
31. Connect the printhead to the relay device.
32. Hydrophobize the front surface of the print head.
33. Fill the completed printhead with ink and test it. A nozzle filled with ink is shown in FIG.

Description of IJ08 SF In this embodiment, the shutter is driven by a magnet coil. A coil used to move the attached shutter opens and closes the shutter. The shutter is provided between an ink reservoir under varying ink pressure and a nozzle chamber having an ink discharge hole that defines ink discharge. When the shutter is opened, ink flows from the ink reservoir to the nozzle chamber, and the ink is discharged from the ink discharge hole. When the shutter is closed, ink is not discharged from the chamber.

    FIG. 112 shows a single inkjet nozzle device 710 in a closed position. Device 710 includes a series of shutters 711 that are disposed on apertures corresponding to the nozzle chambers.

    FIG. 113 shows an inkjet nozzle 710 that is in an open state. Here, it is shown that the aperture 712 provides a liquid connection between the ink discharge hole 714 and the nozzle chamber 713. The shutter, for example, 711 is connected to each other, and further, the shutter, for example, 711 is connected to an arm 716 that is rotatably provided around a rotation center 717 around which the shutter, for example, 711 rotates. The shutter 711 and the arm 716 are constructed from nickel iron (NiFe) and are magnetically attached to the electromagnetic device 719. The electromagnetic device 719 has a NiFe core 720 and a copper coil 721 built around it. The copper coil 721 is connected to the underlying device via vias 723 and 724. The coil 719 is driven by energizing the coil 721 and generates a corresponding attractive force enlarged in the regions 726 and 727. The high attraction force results from the proximity of both ends of the electromagnet 719. This causes an overall rotation around the rotation center 717 on the surfaces 726, 727, thereby rotating the shutter from the closed position to the open position.

    A number of coil springs 730 to 732 are provided, and the coil springs store energy when the shutter rotates. Accordingly, when the electromagnet 719 is not driven, the coil springs 730-732 act to return the shutter to its closed position. As previously mentioned, opening and closing shutter 711 directs ink flow to the nozzle chamber for subsequent ejection. Coil 719 rotates arm 716 and surfaces 726 and 727 are in contact with electromagnet 719. Since the surfaces are in close proximity, less than the amount necessary for the arm 716 to first begin to move, the surfaces 726 and 727 maintain contact with the electromagnet 719 due to the holding current.

    The shutter 711 is held in a plane by a guide 734 that slightly covers the end portion of the shutter 711.

    FIG. 114 is an exploded perspective view showing one form of construction of the nozzle device 710 based on the embodiment. A bottom level having a silicon layer 740 doped with boron is formed from building a doped epitaxial layer in the selected wafer and then back-etched using the boron doped layer as an etch stop. Next, a silicon layer 741 having crystallographically etched pits that form the nozzle chamber 713 is provided. On top of the silicon layer 7441, a 2 micron silicon dioxide layer 742 having an opening in the nozzle chamber pit is constructed, and the sidewalls of the nozzle chamber pit are passivated by a subsequent nitride layer. On the silicon dioxide layer 742, a nitride layer 744 is constructed to passivate the lower silicon dioxide layer 742 and serve as a base for constructing an electromagnet portion and a shutter. The nitride layer 744 and the underlying silicon dioxide layer have appropriate vias that connect to the ends of the electromagnet circuit to supply power to the electromagnet circuit on demand.

    Next, a copper layer 745 is provided. The copper layer provides the lower part of the copper layer that is used to construct the base wiring layer for the electromagnet array and the construction part of the guide 734 in addition to the lower part of the center of rotation 717.

    Next, a NiFe layer 747 that is used to form the electromagnet interior 720 is provided. The NiFe layer 747 is further used to form a rotation center, an aperture arm and shutter 711, a guide 734 portion, and various helical springs. Used. On top of the NiFe layer 747 is a copper layer 749 that provides the side and top turns of the coil 721, which also provides the top configuration of the guide 734. Each layer 745, 747 is insulated from its surroundings by utilizing a nitride passivation layer (not shown). In addition, the upper passivation layer can cover various top layers that are exposed to ink in the ink reservoir and nozzle chamber. The various layers 745 and 749 can be formed by using a sacrificial structure in which the sacrificial material is etched away leaving the drive.

    One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teachings of this embodiment can be performed while performing the following steps.

    1. A 3 micron epitaxial silicon to which boron is heavily added is placed on the wafer polished on both sides.

    2. Depending on the CMOS process used, p-type or n-type 10 micron epitaxial silicon is placed.

    3. Complete 0.5 micron single layer polysilicon two layer metal CMOS process. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 115 is a heading showing various materials in these manufacturing drawings and various materials in the cross-reference inkjet structure.

    4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the edge of the printhead chip. This step is shown in FIG.

    5. The exposed silicon is crystallographically etched using KOH. This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is shown in FIG.

    6. Place 10 micron sacrificial material. Using CMP, the oxide is smoothed. Temporarily, the sacrificial material fills the nozzle cavity. This step is illustrated in FIG.

7. Place 0.5 micron silicon nitride (Si ₃ N ₄ ).

    8). Using the mask 3, the nitride and oxide are etched until the aluminum or sacrificial material is reached. This mask defines a contact bias from the aluminum electrode to the solenoid and a fixed grid on the nozzle recess. This step is shown in FIG.

    9. Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities.

  A 10.2 micron resist is applied, and exposure and development are performed using a mask 4. This mask defines the bottom side of the square helix of the solenoid and the bottom layer of the vertical walls of the shutter grid. The resist acts as an electroplating mold. This step is shown in FIG.

  11.1 micron copper is electroplated. This step is shown in FIG.

  12 Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.

  13. Place 0.1 micron silicon nitride.

  14. Place 0.5 micron sacrificial material.

  15. The sacrificial material is etched using the mask 5 until the nitride is reached. This mask defines the solenoid, the fixed magnetic pole, the pivot (center of rotation), the spring struts, and the middle layer of the vertical walls of the shutter grid. This step is shown in FIG.

16. A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
A 17.3 micron resist is applied and exposed and developed using a mask 6. This mask defines all soft magnetic members that are intermediate layers of fixed magnetic poles, pivots, shutter grills, lever arms, spring posts, and shutter grill vertical stoppers. The resist acts as an electroplating mold. This step is illustrated in FIG.

18.2 micron CoNiFe is electroplated. This step is illustrated in FIG.
19. Strip the resist and etch the exposed seed layer. This step is shown in FIG.

20. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).

  A 21.2 micron resist is applied, exposed using the mask 7, and developed. This mask defines solenoid vertical wire segments where the resist acts as an electroplating mold. This step is shown in FIG.

  22. Using the mask 7 resist, the nitride is etched until it reaches copper.

  Electroplate 23.2 micron copper. This step is shown in FIG.

  24. Place a copper seed layer.

  A 25.2 micron resist is applied and exposed and developed using a mask 8. This mask defines the upper side of the square helix of the solenoid and the upper layer of the vertical walls of the shutter grid. This resist acts as an electroplating mold. This step is shown in FIG.

  26.1 micron copper is electroplated. This step is shown in FIG.

  27. Strip the resist, etch the exposed copper seed layer, and strip the newly exposed resist. This step is shown in FIG.

  28. A similar silicon nitride of 0.1 microns is placed as a corrosion barrier.

  29. Using the mask 9, the bonding pad is opened.

30. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.
31. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
32. Using the mask 9, the silicon layer doped with boron is plasma back etched to a depth of 1 micron. This mask defines the rim of the nozzle. This step is shown in FIG.
33. Plasma back etching is performed using the mask 10 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
34. Separate the chip from the glass blank. Strip all adhesive, resist, sacrificial and exposed seed layers. This step is illustrated in FIG.
35. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer. The container is also provided with a piezoelectric actuator attached behind the ink groove. Piezoelectric actuators provide the fluctuating ink pressure required for ink ejection.
36. Connect the print head to the relay device.
37. Make the front surface of the print head hydrophobic.
38. Fill the completed printhead with ink and test it. A nozzle filled with ink is shown in FIG.

Description of IJ10 TF This example is an array of inkjet nozzles provided such that each nozzle is under the influence of an external pulsed magnetic field. The external pulsed magnetic field causes the selected nozzle to eject ink from its ink nozzle chamber.

    138 and 139 are partial cross-sectional perspective views of a single ink nozzle 910. FIG. 138 shows the nozzle in the rest position, and FIG. 139 shows the nozzle 910 in the ink discharge position. The inkjet nozzle 910 has an ink discharge hole 911 for discharging ink on demand. The ink discharge hole 911 is normally filled with ink and connected to an ink nozzle chamber 912 to which ink is supplied from an ink storage unit 913 through a hole, for example, 915.

    The magnetic drive 925 has a magnetic soft core 917 surrounded by a nitride coating, for example 918. The nitride coating has end protrusions 927.

    The magnetic core 917 operates under the influence of an external pulse magnetic field. When the external magnetic field is very high, the actuator 925 quickly moves downward to discharge ink from the ink discharge hole 911. In the vicinity of the actuator 920, a locking mechanism 920 constituting a thermal actuator made of a copper resistance circuit having two arms 922 and 924 is provided. The current passes through the connected arms 922, 924 and heats them. The thinner arm 922 generates more resistance heat than the thicker arm 924. The arm 922 has a meandering shape and is surrounded by polytetrafluoroethylene (PTFE) having a high coefficient of thermal expansion. This increases the degree of expansion during heating. The copper part expands in an accordion manner together with the PTFE part. The arm 924 has a thin portion 929 (FIG. 140) that becomes a concentrated bending region as a result of various forces acting upon heating. Therefore, the bending of the arm 924 is emphasized in the region 929, and when heated, the region 929 bends and the end 926 (FIG. 138) moves outward, hindering the downward movement of the end 927 of the actuator 925. To do. Therefore, attempting to eject an ink drop from the current nozzle chamber does not drive the locking mechanism 920, so that ink is ejected from the ink ejection hole during the next phase of the external magnetic pulse. When ink is not discharged from the current nozzle, the locking mechanism 920 is driven to prevent the actuator 925 from moving, and stops discharging ink from the chamber.

    Importantly, the actuator 920 is positioned in the recess 928 so that more ink flows through the arm 924 while very little ink passes through the arm 922 during operation. .

    FIG. 140 shows an exploded perspective view of a single inkjet nozzle 910 showing the various layers that make up the nozzle. The nozzle 910 can be constructed on a semiconductor wafer using standard semiconductor manufacturing techniques in addition to the techniques typically used for micro electromechanical system (MEMS) construction. For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in A nozzle plate including an ink discharge hole 911 is constructed at the bottom level 930. The nozzle plate 930 is constructed from a boron-added epitaxial layer embedded in a silicon wafer and back-etched to the position of the epitaxial layer. Next, the epitaxial layer itself is etched using a mask to form a nozzle rim (not shown) and a nozzle hole 911.

    Next, the silicon wafer layer 932 is etched to form a nozzle chamber 912. The silicon layer 932 is etched using a high density low pressure plasma etch available from a surface technology system, including substantially vertical walls, and is substantially filled with a sacrificial material that is later etched away.

    On top of the silicon layer, a two-layer CMOS circuit layer 933 made of glass in addition to the normal metal and poly layers is disposed. Layer 933 constitutes the contact of the heater element constructed from copper. The PTFE layer 935 is provided starting with the construction of the bottom PTFE layer placed first, followed by the placement of a copper layer 934 and then a second PTFE layer covering the copper layer 934.

    Next, a nitride passivation layer 936 is provided that acts to provide a passivation layer for the underlying layer, and the passivation layer 936 also includes the base of the soft magnetic nickel iron layer 917 that forms the magnetic actuator portion of the actuator 925. Acts on the form to be provided. The nitride layer 936 has a bent portion 940 used for bending the actuator.

    Next, a nitride passivation layer 939 is disposed to passivate the top and side surfaces of the nickel iron (NiFe) layer 917.

    One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teachings of this embodiment can be performed while performing the following steps.

    1. A 3 micron epitaxial silicon to which boron is heavily added is placed on the wafer polished on both sides.

    2. Depending on the CMOS process used, p-type or n-type 10 micron epitaxial silicon is placed.

    3. Complete the drive transistor, data distribution and timing circuit using a 0.5 micron single layer polysilicon two layer metal CMOS process. The relevant features of the wafer in this step are shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 141 is a heading showing various materials in these manufacturing drawings and various materials of the cross-reference inkjet structure.

    4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the edge of the printhead chip. This step is shown in FIG.

    5. For example, crystallographic etching is performed on the exposed silicon using KOH or EDP (ethylenediamine pyrocatechol). This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is shown in FIG.

6. Place 0.5 micron silicon nitride (Si ₃ N ₄ ).

    7. Place 10 micron sacrificial material. Smooth to 1 micron on nitride using CMP. Temporarily, the sacrificial material fills the nozzle holes. This step is shown in FIG.

    8. Place 0.5 micron polytetrafluoroethylene (PTFE).

    9. The contact bias is etched using mask 2 until it reaches the second level metal in the PTFE, sacrificial material, nitride, and CMOS oxide layers. This step is shown in FIG.

  Place 10.1 micron titanium nitride (TiN).

  11. TiN is etched using the mask 3. This mask defines the heater pattern for the hot arm of the catch actuator, the cold arm and the catch of the catch actuator. This step is shown in FIG.

  Place 12.1 micron PTFE.

  13. The PTFE 2 layer is etched using the mask 4. This mask defines the sleeve of the hot arm of the catch actuator. This step is illustrated in FIG.

  14 A seed layer for electroplating is placed.

  15. A 11-micron resist is applied, and using the mask 5, it is exposed and developed. This mask defines a magnetic paddle. This step is shown in FIG.

  16. Electroplating a 10 micron ferromagnetic material such as nickel iron (NiFe). This step is shown in FIG.

  17. Strip the resist and etch the seed layer.

  18. Place 0.5 micron low stress PECVD silicon nitride.

  19. The nitride is etched using a mask 6 that defines a spring. This step is shown in FIG.

  20. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.

21. Using the mask 7, the silicon layer doped with boron is plasma back etched to a depth of 1 micron. This mask defines the rim of the nozzle. This step is shown in FIG.
22. Plasma back etching is performed using the mask 8 through the layer to which boron is added. This mask defines nozzles and chip edges.
23. The nitride is plasma back etched through the holes in the layer doped with boron to the glass sacrificial layer. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
24. The adhesive layer is peeled off and the chip is separated from the glass blank.
25. Etch the sacrificial layer. This step is illustrated in FIG.
26. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
27. Connect the printhead to the relay device.
28. Hydrophobize the front surface of the print head.
29. Fill the completed printhead with ink and apply an oscillating magnetic field to test the printhead. This step is illustrated in FIG.

Description of IJ11 F This example provides an ink jet nozzle and chamber filled with ink. The jet nozzle chamber has a stationary coil and a movable coil. During driving, the stationary coil and the moving coil attract each other and load the spring. When the drive of the coil is released, the ink droplet is discharged from the nozzle.

    FIG. 157 to FIG. 160 schematically show the operation of the embodiment. FIG. 157 shows a single inkjet nozzle chamber 1010 having an ink discharge hole 1011 and an ink meniscus in this portion 1012. Inside the nozzle chamber 1010, a fixed or stationary coil 1015 and a movable coil 1015 are arranged. The device of FIG. 157 shows a stationary state in the nozzle chamber.

    The two coils are driven and attract each other. As a result, the movable plate 1015 moves toward the fixed or stationary plate 1014 as shown in FIG. As a result of the movement, the springs 1018 and 1019 are loaded. Next, when the coil 1015 moves, the shape of the meniscus 1012 changes and ink flows out of the chamber 1010. The coil is driven for the time until the moving coil 1012 reaches its position (about 2 milliseconds). The coil current level changes to a lower “level” until the nozzle is refilled with ink. Since the magnetic gap between plates 1014 and 1015 is minimized when the moving coil 1015 is in its stopped position, the holding force is substantially less than the maximum current level used to move the plate 1015. The surface tension of the meniscus 1012 acts as a force in the ink, and the nozzle is replenished with ink as shown in FIG. Nozzle replenishment fills the retracted piston volume with ink in a process that takes about 100 milliseconds.

    The coil current is cut off, and the movable coil 1015 operates as a plunger that is accelerated to the normal position by the springs 1018 and 1019, as shown in FIG. The spring force of the plunger coil 1015 is maximized at the beginning of the stroke and becomes slower as the spring force approaches zero. As a result, the acceleration of the plunger plate 1015 is highest at the beginning of the stroke and decreases during the stroke, resulting in a more uniform ink speed during the stroke. The moving plate 1015 inflates the meniscus and cuts to form ink drops 1020. The plunger coil 1015 then stops at its rest position until the next drop ejection cycle.

FIG. 161 is a perspective view illustrating an example of the construction of the inkjet nozzle 1010. Inkjet nozzle 1010 is constructed in the form of a portion of a large nozzle 1010 array formed on silicon wafer base 1022 for the purpose of supplying a printhead having a predetermined dpi, such as a 1600 dpi printhead, for example. . The print head 1010 is constructed using advanced silicon semiconductor manufacturing and micromachining and microassembly process techniques. The wafer is first formed with an underlying drive circuit (not shown) and then finished with a 2 micron thick oxide layer 1022 with an appropriate bias for connection. Preferably, the CMOS layer has one level of basic connecting metal. A nitride layer 1023 is constructed on the glass layer 1022 and two coil layers 1025 and 1026 are embedded therein. Coil layers 1025 and 1026 are embedded in nitride layer 1023 using the well-known dual damascus process and chemical mechanical planarization techniques ("Chemical mechanical planarization of microelectromaterials" Sterger
Wald et al., New York, New York, John
(Published in 1997 by Wiley and Sons). The two coils 1025 and 1026 are connected using fire at the center thereof, and are further connected to the end portions 1028 and 1029 by appropriate vias of the end portions 1028 and 1029. Similarly, the moving coil is formed from two copper coils 1031, 1032 which are encased in a further nitride layer 1033. The copper coils 131 and 1032 and the nitride layer 1033 are provided with torsion springs 1036 to 1039 so that the movable coil at the upper end is in a stable state away from the bottom coil. When current passes through various copper coils, the upper copper coils 1031 and 132 are pulled toward the bottom copper coils 1025 and 1026, and a load acts on the springs 1036 to 1039 to be twisted. When the current is cut off, the springs 1036-1039 act to return the upper movable coil to its original position. The nozzle chamber is formed through a nitrided wall portion having slots formed between adjacent walls, for example, 1040 and 1041. The slot allows ink to flow into the chamber as needed. The upper nitride plate 1044 provides an upper cap inside 1010 and is provided in the ink flow groove support. The nozzle plate 044 has a series of holes 1045 that assist in sacrificial etching of the lower layer. In addition, an ink discharge nozzle having a raised portion around it is also provided to prevent the ink from flowing out on the outer surface of the nozzle. The diameter of the etched through hole 1045 is formed to be much smaller than the diameter of the nozzle hole 1011, and at the same time as the ink is discharged from the nozzle 1011, the surface tension holds the ink in the through hole 1045.

    As previously mentioned, the various layers of nozzle 1010 are constructed based on standard semiconductor and micromechanical technology. These techniques use a dual damascus process as previously described, in addition to the use of sacrificial layer etching to provide a layer that provides a support structure that is subsequently formed using sacrificial layer etching.

    Ink is supplied into the nozzle 1010 by standard techniques, such as providing an ink groove along the side of the wafer to create a flow of ink in the area under the nozzle plate 1044. Further, the entrance of the ink groove can be provided in a form penetrating the wafer by using a high density low pressure plasma etching process known as an advanced silicon edge process of Surface Technology System. The etched inlets 1045 are so small that the surface tension can act to prevent ink from leaking out of those inlet holes.

FIG. 162 shows the final assembled inkjet nozzle ready for ink discharge.

One of the detailed manufacturing processes that can be used to manufacture a monolithic ink jet print head that operates based on the main teachings of this embodiment can be performed while performing the following steps.
1. Use a double-side polished wafer. A drive transistor, a data distribution circuit, and a timing circuit are completed using a 0.5 micron single layer polysilicon two-layer metal CMOS process. This step is shown in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 163 is a heading showing various materials in these manufacturing drawings and various materials of the cross-reference inkjet structure.
2. Place 0.5 micron low stress PECVD silicon nitride (Si ₃ N ₄ ). The nitride acts as a dielectric, and when etching is stopped, acts as a copper diffusion barrier and an ion diffusion barrier. Since the printhead operates slowly, it is not important to have a high dielectric constant for the silicon nitride. For this reason, the nitride layer can be made thicker than a submicron CMOS back-end process.

    3. The nitride layer is etched using the mask 1. The mask defines a contact via from the solenoid coil to the second level metal contact. This step is shown in FIG.

    4. Place 1 micron PECVD glass.

5. The mask 2 is used to etch the glass until the nitride or second level metal is reached. This mask defines the first layer of stationary solenoids. This step is shown in FIG.
6). A thin barrier layer of Ta or TaN is disposed.
7). Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities.

    8. Electroplate copper of 1 micron.

    9. Smoothing is performed using CMP. Steps 2 through 9 represent the copper dual damascus process. This step is shown in FIG.

  10. Place 0.5 micron low stress PECVD silicon nitride.

  11. The nitride layer is etched using the mask 3. This mask defines the bias from the second layer to the first layer of the fixed solenoid. This step is shown in FIG.

  Place 12.1 micron PECVD glass.

  13. The mask 4 is used to etch the glass until it reaches nitride or copper. This mask defines the second layer of stationary solenoids. This step is shown in FIG.

  14 A thin barrier layer and a seed layer are placed.

  15. Electroplate copper of 1 micron.

  16. Smoothing is performed using CMP. Steps 10 to 16 represent the second copper dual damascus process. This step is shown in FIG.

  17. Place 0.5 micron low stress PECVD silicon nitride.

  18. Place 0.1 micron PTFE. By making the space between the two solenoids hydrophobic in this way, bubbles are formed in this space when the nozzle is filled with ink. This allows the upper solenoid to move more freely.

  Place a 19.4 micron sacrificial material. Thereby, a space is formed between the two solenoids.

  20. Place 0.1 micron low stress PECVD silicon nitride.

  21. Using the mask 5, the nitride layer, the sacrificial layer, the PTFE layer, and the nitride layer in step 17 are etched. This mask defines the bias from the first layer moving solenoid to the second layer fixed solenoid. This step is shown in FIG.

  Place 22.1 micron PECVD glass.

  23. The mask 6 is used to etch the glass until it reaches the nitride or copper. This mask defines the first layer of the moving solenoid. This step is shown in FIG.

  24. A thin barrier layer and seed layer are placed.

  Electroplate 25.1 micron copper.

  26. Smoothing is performed using CMP. Steps 20 through 26 represent a third copper dual damascus process. This step is shown in FIG.

  27. Place 0.1 micron low stress PECVD silicon nitride.

  28. The nitride layer is etched using the mask 7. This mask defines the bias from the second layer of moving solenoid to the first layer of moving solenoid. This step is shown in FIG.

  Place 29.1 micron PECVD glass.

  30. The mask 8 is used to etch until nitride or copper is reached. This mask defines a second layer of moving solenoid. This step is shown in FIG.

  31. A thin barrier layer and seed layer are placed.

Electroplate 32.1 micron copper.
33. Smoothing is performed using CMP. Steps 27 to 33 represent the fourth copper dual damascus process. This step is illustrated in FIG.

  34. Place 0.1 micron low stress PECVD silicon nitride.

  35. The nitride is etched using the mask 9. This mask defines the sacrificial material to be etched which is in the space between the moving solenoid and its spring and the solenoid. It also defines a bond pad. This step is shown in FIG.

  36. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.

  37. Place sacrificial material of 10 microns.

  38. The sacrificial material is etched using the mask 10. The mask defines the nozzle chamber wall. This step is shown in FIG.

  Place 39.3 micron PECVD glass.

  40. Etch to a depth of 1 micron using mask 11. This mask defines the rim of the nozzle. This step is shown in FIG.

  41. Etching is performed using the mask 12 until the sacrificial layer is reached. This mask defines the roof of the nozzle chamber and the nozzle itself. This step is shown in FIG.

42. The mask 7 is used to completely back-etch through the silicon wafer (for example, Surface Technology Systems ASE (using an improved silicon etcher)). The mask defines an ink port that is etched through the wafer. By this etching, the wafer also becomes a dice. This step is shown in FIG.
43. Etch the sacrificial material. By this etching, a nozzle chamber is formed, an actuator is also formed, and the chips are separated from each other. This step is illustrated in FIG.

44. Mount the printhead on the container. This container may be a plastic-formed molding member into which an ink groove for supplying ink of an appropriate color to the ink port on the back surface of the wafer is introduced.
45. Connect the printhead to the relay device. TAB may be used to connect with a low profile in a manner that minimizes airflow disturbance. Wire bonds can also be used if the printer operates with sufficient clearance from the paper.
46. Hydrophobize the front surface of the print head.
47. Fill the completed printhead with ink and test it. A nozzle filled with ink is shown in FIG.

Description of IJ12 F This example shows a linear stepper motor used to control a plunger device. The plunger device can compress the ink in the nozzle chamber and eject the ink on demand from the chamber.

    FIG. 184 shows a single nozzle device 1110 constructed according to this embodiment. The nozzle device 1110 has a nozzle chamber 1111, and ink flows into the nozzle chamber 1111 via the nozzle chamber filter 1114. The nozzle chamber filter has a series of columns for filtering and removing foreign material in the flow ink. The nozzle chamber 1111 has an ink discharge hole 1115 for discharging ink on demand. Normally, the nozzle chamber 1111 is filled with ink.

    The linear actuator 1116 is provided to quickly push the nickel iron plunger 1118 into the nozzle chamber 1111 to compress the ink volume in the chamber 1111 and discharge ink droplets from the ink discharge holes 1115. The plunger 1118 is connected to a stepper movable column apparatus 1116 driven by a three-phase arrangement of electromagnets 1120 to 1131. The electromagnets are electromagnets 1120, 1126, 1123 and 1129 driven in the first phase, electromagnets 1121, 1127, 1124 and 1130 driven in the second phase, and electromagnets 1122, 1128, 1125 driven in the third phase and 1131 drives in three phases. The electromagnet is also driven in reverse, releasing the plunger 1118 via the actuator 1116. One end of the actuator 1116 is guided by guides 1133 and 1134. The other end is coated with a hydrophobic material such as polytetrafluoroethylene (PTFE), which constitutes the main part of the plunger 1118. PTFE pushes back ink from the nozzle chamber 1111 and forms a thin film, for example, 1138, 1139, between the plunger 1118 and the side wall, for example, 1136, 1137. The properties of the surface tension of the thin films 1138, 1139 act to balance each other, thereby guiding the plunger 1118 within the nozzle chamber. The meniscus, eg 1138, 1139 further prevents ink from flowing out of the chamber 1111 so that the electromagnets 1120 to 1131 are operated in normal air.

    Accordingly, the nozzle device 1110 operates to discharge droplets on demand by the actuator 111 driven by the electromagnets 1120 to 1131 that are appropriately driven synchronously. When the actuator 1116 moves, the plunger 1118 moves toward the nozzle discharge hole 1115, whereby the ink is discharged from the hole 1115.

    Next, the electromagnet is driven reversely, the plunger moves in the reverse direction, and ink flows from the ink replenishing portion connected to the ink inlet hole 1114.

    Preferably, a number of ink nozzle devices 1110 are constructed adjacent to each other to form a number of nozzle ink discharge devices. The nozzle device 1110 is preferably constructed in the form of an array print head formed on a single silicon wafer and is shredded on demand. The fragmented print head is connected to an ink replenishment unit, and constitutes a flow of ink that penetrates the chip or a flow of ink from the side surface of the chip.

    FIG. 185 shows an exploded perspective view of various layers of the nozzle device 1110. The nozzle device is built on top of a silicon wafer 1140 having normal electronic circuitry such as a two level gold layer CMOS layer 1141. Two-metal CMOS provides a drive and control circuit for discharging ink from the nozzles by connecting an electromagnet to the CMOS layer. Above the CMOS layer 1141 is a nitride passivation layer 1142 that passivates the underlying layer from sacrificial etch steps and ink erosion utilized in the construction of the nozzle device 1110.

    Various other layers are constructed on the nitride layer 1141. Wafer layer 1140, CMOS layer 1141 and nitride passivation layer 1142 are constructed with appropriate Fires to connect the upper layers. On top of the nitride layer 1142, a bottom copper layer 1143 is constructed that is suitably connected to the CMOS layer 1141. Next, the nickel iron layer 1145 constituting the core portions of the guides 1131 and 1132, the actuator 1116 and the electromagnet is constructed. On top of the NiFe layer 1145, a second copper layer 1146 is built that forms the remainder of the electromagnet device. The copper layer 1146 can be constructed using a dual damascus process. Next, a PTFE layer 1147 is placed, and then a nitride layer 1148 is built that includes the side filter layer and the sidewall portions of the nozzle chamber. On the nitride layer 1148, a discharge hole 1115 and a rim 1151 are formed by etching. A number of apertures 1150 are provided on the nitride layer 1148, and the apertures 1150 are provided for sacrificial etching of sacrificial materials used in the construction of various underlayers including the nitride layer 1148. .

    The various layers 1143, 1145 to 1148 use a sacrificial material to arrange the structure of the various layers, and then etch away the sacrificial material by subsequent etching to form (release) the structure of the nozzle device 1110. Can be built. This can be understood by those skilled in the art of micro-electro-mechanical system (MEMS) construction.

    For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out while performing the following steps.
1. A wafer polished on both sides is used. A drive transistor, data distribution and timing circuit are completed using a 0.5 micron single layer polysilicon two layer metal CMOS process. This step is illustrated in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 186 is a heading showing various materials in these manufacturing drawings and various materials of the cross-reference inkjet structure.
Place a 2.1 micron sacrificial material.
3. Using the mask 1, the sacrificial material and the CMOS oxide layer are etched until the second level metal is reached. This mask defines a contact via from the second level metal electrode to the solenoid. This step is illustrated in FIG.
4). A barrier layer of titanium nitride (TiN) and a copper seed layer are disposed.
Apply a 5.2 micron resist, and use mask 2 to expose and develop. This mask defines the underside of the solenoid square winding. The resist acts as an electroplating mold. This step is shown in FIG.
6. Electroplate copper of 1 micron. Copper is used because of its low resistivity (resulting in high efficiency) and high electrophoretic resistance, which is reliable even at high current densities. This step is shown in FIG.
7). The resist is stripped and the exposed barrier layer and seed layer are etched. This step is shown in FIG.
8. Place 0.1 micron silicon nitride.
9. A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
A 10.3 micron resist is applied and exposed and developed using a mask 3. This mask defines all the soft magnetic components that are the fixed magnet pole of the solenoid, the movable pole of the linear actuator, the horizontal guide, and the core of the ink pusher. The resist acts as an electroplating mold. This step is shown in FIG.
11.2 micron CoNiFe is electroplated. This step is shown in FIG.
12 Strip the resist and etch the exposed seed layer. This step is shown in FIG.
13. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).
14. A 2 micron resist is applied and exposed and developed using a mask 4. This mask defines solenoid vertical wire segments where the resist acts as an electroplating mold. This step is shown in FIG.
15. The nitride is etched using a mask 4 resist until it reaches copper.
Electroplating 16.2 micron copper. This step is shown in FIG.
17. Place a copper seed layer.
18. A 18.2 micron resist is applied and exposed to light and developed using a mask 5. This mask defines the upper side of the solenoid square winding. The resist acts as an electroplating mold. This step is shown in FIG.
19. Electroplate copper with 1 micron. This step is shown in FIG.
20. Strip the resist, etch the exposed copper seed layer, and strip the newly exposed resist. This step is shown in FIG.
21. Using the mask 6, the bonding pad is opened.
22. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet separated.
Place 23.5 micron PTFE.
24. Using the mask 7, the PTFE is etched until it reaches the sacrificial layer. This mask defines the ink pusher. This step is illustrated in FIG.
Place a 25.8 micron sacrificial material. Using CMP, planarize to the top of the PTFE ink pusher. This step is illustrated in FIG.
26. Place 0.5 micron sacrificial material. This step is shown in FIG.
27. The mask 8 is used to etch all layers of sacrificial material. This mask defines the nozzle chamber walls. This step is shown in FIG.
2. Place 28.3 micron PECVD glass.
29. Etch to a depth (about) 1 micron using mask 9. This mask defines the rim of the nozzle. This step is shown in FIG.
30. Etching is performed using the mask 10 until the sacrificial layer is reached. This mask defines the nozzle chamber roof, nozzles, and sacrificial etch access holes. This step is shown in FIG.
31. The mask 11 is used to completely back-etch through the silicon wafer (for example, using Surface Technology Systems' ASE (using an improved silicon etcher)). Back etching continues through the CMOS glass layer until the sacrificial layer is reached. The mask defines ink ports that are etched through the wafer. This etching makes the wafer smaller. This step is shown in FIG.

32. Etch the sacrificial material. This etching reveals a nozzle chamber, creates an actuator, and separates the chip. This step is shown in FIG.
33. Mount the printhead on the container. This container may be a plastic-formed molding member into which an ink groove for supplying ink of an appropriate color to the ink port on the back surface of the wafer is introduced. The container also has a piezoelectric actuator attached to the back of the ink channel. Piezoelectric actuators supply the oscillating pressure required for inkjet operation.
34. Connect the printhead to the relay device. TAB may be used to connect with a low profile in a manner that minimizes airflow disturbance. Wire bonds can also be used if the printer operates with sufficient clearance from the paper.
35. Hydrophobize the front surface of the print head.
36. Fill the completed printhead with ink and test it. A nozzle filled with ink is shown in FIG.

    In addition, other constructions will be apparent to those skilled in the art, including variations in the use of various materials and the use of nitride passivation layers for other suitable materials. It will be readily understood that the examples are merely illustrative of the invention.

Description of IJ13 S In this embodiment, the inkjet nozzle chamber has a shutter mechanism that opens and closes on the nozzle chamber. The shutter mechanism has a ratchet mechanism that opens and closes a slide. The ratchet mechanism is driven by a gear mechanism, and the gear mechanism is driven by the drive actuator that is driven by energization in a magnetic field. The force of the actuator is geared down, driving the ratchet and pawl mechanism, opening and closing the shutter on the nozzle chamber.

    FIG. 208 shows a single nosle device 1210 in the open position. The nozzle device 1210 has a nozzle chamber 1212 having pits from anisotropic <111> crystallographic etching. The pits are etched down to the initial boron-added epitaxial layer 1213 having nozzle discharge holes 1215 and nozzle rims 1214 for discharging ink. Ink flows through the flow path 1216 when the aperture 1216 is open. The ink flow through the flow path 1216 comes from an ink reservoir that is operated under oscillating ink pressure. When the shutter is opened, ink is discharged from the ink discharge hole 1215. The shutter mechanism has a plate 1217 that is driven to a closed position via guide grooves 1218 and 1219. The nozzle plate is driven by a latch mechanism 1220, and the plate mechanism is held in a correct position by retainers 1222 to 1225.

    The nozzle device 1210 can be constructed using a two-level poly process, which is a standard microelectromechanical system manufacturing technique (MEMS). For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in Plate 1217 is constructed from a first level polysilicon and retainers 1222 through 1225 are constructed from a lower first level poly portion and a second level poly portion. This point becomes more apparent from the exploded perspective view of FIG.

    The bottom circuit of the plate 1217 has a number of pins 1227 provided on the bottom surface of the plate 1217, thereby reducing the adsorption effect.

    The ratchet mechanism 1220 is driven by a gear device having a first gear 1230, a second gear 1231, and a third gear 1232. These gears 1230-1232 are constructed using a two level poly constructed around a central pivot 1235-1237 to which each gear corresponds. The gears 1230 to 1232 are operated so as to be geared down to the ratchet speed by the gear driven by the gear actuator mechanism 1240.

    FIG. 209 shows an exploded perspective view of a single nozzle chamber 1210. The actuator 1243 mainly has a copper circuit having a driving end 1242 that engages and drives the teeth 1243 of the gear 1232. The copper portion has winding portions 1245 and 1246 that expand and contract by the movement of the end portion 1243. The end portion 1242 is driven by energizing the copper portion in the presence of a magnetic field perpendicular to the wafer surface, and Lorentz force acts on the actuator 1240 due to the interaction between the magnetic field and the circuit to move the end portion 1242. , The tooth 1243 is driven. The copper portion is disposed on aluminum boards 1248 and 1249 connected to lower level circuits on the wafer on which the actuator 1240 is mounted.

    In FIG. 208, the actuator 1240 is driven at high speed by the high speed gears 1230 to 1232 acting to gear down the high speed drive of the actuator 1240, and opens and closes the ratchet mechanism 1220 on demand. Therefore, when ejecting ink droplets from the nozzle 1215, the shutter is opened by the drive actuator 1240. In the next high pressure portion of the oscillating pressure cycle, ink is ejected from nozzle 1215. Next, when ink is not discharged in the cycle, the second actuator 1250 drives the gear in the reverse direction, closes the shutter plate 1217 on the nozzle chamber 1212, and stops ink discharge in the subsequent cycle. The pit 1227 acts to reduce the force required for driving between the opening and closing positions of the shutter plate 1217.

    FIG. 210 is a perspective cross-sectional view showing the various layers making up a single nozzle chamber 1210. The nozzle chamber can form part of a nozzle chamber array that constitutes a single printhead, which is also a semiconductor wafer manufacturing technique well known to those skilled in the art of MAMS assembly and construction. Part of a printhead array manufactured on a semiconductor wafer based on

    The bottom boron layer 1213 can be constructed from a processing step of back-etching a silicon wafer using an epitaxial layer doped with boron as an etching step. Further, the boron layer processing is performed to define nozzle holes 1215 that include nozzle rims 1214.

    The next layer is a silicon glass layer 1252 typically placed on the boron doped layer 1213. The silicon glass layer 1252 has pits 1212 that are anisotropically etched to define the structure of the nozzle chamber. A glass layer 1254 is provided on the silicon layer 1252, and the glass layer has various electric circuits (not shown) for driving the actuator. Layer 1254 is passivated by a nitride layer 1256 that includes grooves 1257 that passivat the sidewalls of glass layer 1254.

    Overlying the passivation layer 1256 is a first level polysilicon layer 1258 that defines a shutter and various gears. The second polysilicon layer 1259 has a gear 1231 and various holding mechanisms. Next, a copper layer 1260 defining a copper circuit actuator is provided. Copper 1260 is connected to the lower portion of glass layer 1254 to build a circuit for driving the copper actuator.

    The nozzle chamber 1210 is constructed using a standard MEMS process that forms various layers using a sacrificial material such as silicon dioxide, and then the underlying layer is removed by sacrificial etching.

    A wafer containing a series of print heads is then shredded into separate print heads that are mounted on the walls of the ink replenishment chamber having a piezoelectric vibration actuator that controls the pressure in the ink refill chamber. . Thus, the ink is discharged on demand when the shutter plate is opened during a period of high vibration pressure, and the ink is discharged. Nozzles are arranged by placing the print head in a strong magnetic field due to the current through actuators, eg 1240, 1250, which are required for opening and closing the permanent magnet or electromagnet device and the shutter, thereby discharging ink on demand. Driven.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out while performing the following steps.
A double-side polished wafer in which epitaxial silicon heavily added with 1.3 micron boron is used is used.
2. Place 10 micron n / n + epitaxial silicon. The epitaxial layer is substantially thicker than the required CMOS layer. This is because the nozzle chamber is crystallographically etched from this layer. This step is illustrated in FIG. FIG. 211 is a heading showing various materials in these manufacturing drawings. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle.
3. Using mask 1, for example, KOH or EDP (ethylenediamine
The epitaxial silicon is crystallographically etched using pyrocatechol). This mask defines the nozzle holes. This etching is stopped at the <111> crystal plane and the boron-added silicon layer. This step is illustrated in FIG.
4. Place 12 micron low stress sacrificial oxide. Using CMP, the silicon is planarized. The sacrificial material temporarily fills the nozzle cavity. This step is shown at 214.
5. Start assembly of drive transistor, data distribution and timing circuit using CMOS processing. The MEMS process for forming the inkjet mechanical parts is divided by the manufacturing steps of the CMOS device. An example is a 1 micron 2 poly 2 metal retrograde P-well process. The mechanical part is formed from a CMOS polysilicon layer. For clarity, the CMOS drive element is not shown.
6). The field oxide is grown to a thickness of 0.5 microns using standard LOCOS techniques. In addition to the isolation between transistors, field oxide is used as a MEMS sacrificial layer. Thus, the mechanical details of the ink jet are introduced into the dynamic area mask. The MEMS features of this step are shown in FIG.
7). The PMOS field threshold voltage is embedded. MEMS assembly has no effect on this step other than the calculation of the overall thermal budget.
8). Retrograde P-well and NMOS threshold voltage adjustment embedding is performed using a P-well mask. MEMS assembly has no effect on this step other than the calculation of the overall thermal budget.
9. PMOS N-tab heavy phosphorus implantation is performed via controlled implantation and shallow boron implantation. MEMS assembly has no effect on this step other than the calculation of the overall thermal budget.
10. A first polysilicon layer is disposed and etched. In addition to the gate and local connections, this layer contains the underlying MESM components. This includes the gear, shutter, and lower layer of the shutter guide. This layer is preferably thinner than the normal CMOS thickness. A polysilicon thickness of 1 micron is used. The MEMS features of this step are shown in FIG.
11. Perform NMOS lightly doped drain (LDD) fill. This process is not changed by including MEMS in the processing flow.
12 Oxide placement and polysilicon sidewall spacer RIE etch. This process is not changed by including MEMS in the processing flow.
13. Perform NMOS source / drain embedding. The extended high temperature anneal time to reduce the stress in the two polysilicon layers must be considered to be within the thermal budget for this buried diffusion. In other respects, there is no influence from the MEMS part of the chip.
14 The source and drain of the PMOS are buried. Similar to the NMOS source and drain implants, the only impact from the MEMS portion of the chip is the thermal budget for diffusion of this implant.
15. 1 micron glass is placed as the first interlayer insulator and etched using a CMOS contact mask. The CMOS mask of this layer also includes a pattern for the MEMS interpoly sacrificial oxide. The MEMS characteristics of this step are shown in FIG.
16. A second polysilicon layer is disposed and etched. In addition to the CMOS local connection, this layer includes upper layer MEMS components. This includes the upper layers of gears and shutter guides. A polysilicon thickness of 1 micron can be used. The MEMS features of this step are shown in FIG.
17. 1 micron glass is disposed as the second intermediate layer insulator, and etching is performed using CMOS through one mask. The CMOS mask of this layer also includes patterns for MEMS actuator contacts.
18. Metal 1 placement and etching. If metal 1 is used as a Lorentz actuator, it should not corrode in water like gold or platinum. The MEMS features of this step are shown in FIG.
19. A third interlayer insulator arrangement and etching is shown in FIG. This is a standard CMOS third interlayer insulator device. The mask pattern completely encompasses the coverage area of the MEMS area.
20. Metal 2 placement and etching. This is standard CMOS metal 2. The mask pattern does not include metal 2 in the MEMS area.
21. Place 0.5 micron silicon nitride and etch using MEMS mask 2. This mask defines the sacrificial oxide etch area performed in step 26. Since the sacrificial oxide etch is isotropic, the silicon nitride opening is generally smaller than normal. The CMOS device must be placed sufficiently away from the MEMS device so that it is not affected by the sacrificial oxide etch. FIG. 220 shows the MEMS characteristics of this step.
22. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. The MEMS feature of this step is shown in FIG.
23. Using the MEMS mask 3, the silicon layer to which boron is added is plasma back etched at a depth of 1 micron. This mask defines the rim of the nozzle. The MEMS features of this step are shown in FIG.
24. Plasma back etching is performed using the mask 4 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. The MEMS features of this step are shown in FIG.
25. Separate the chip from the glass blank. Remove all adhesive layers. This step is illustrated in FIG.
26. Etch sacrificial oxide using vapor phase etching using an anhydrous methanol vapor mixture. Adsorption problems can be avoided by using dry etching. This step is illustrated in FIG.
27. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer. The container is also provided with a piezoelectric actuator attached behind the ink groove. Piezoelectric actuators provide the fluctuating ink pressure required for ink ejection. The container also includes a permanent magnet, which supplies a 1 Tesla magnetic field to the Lorentz actuator that constitutes metal 1.
28. Connect the printhead to the relay device.
29. Hydrophobize the front surface of the print head.
30. Fill the completed printhead with ink and test it. A nozzle filled with ink is shown in FIG.

Description of F of IJ14 In this embodiment, an inkjet nozzle is provided that incorporates a plunger surrounded by an electromagnet device. The plunger is composed of a magnetic material, and when the magnetic device is driven, the plunger receives a force toward the nozzle opening, thereby discharging ink from the nozzle opening. When the electromagnet is deactivated, the plunger returns to its rest position utilizing a series of springs configured to return the electromagnet to its original position.

    FIG. 227 shows a cross-sectional view of a single inkjet nozzle 1310 as an example. The inkjet nozzle 1310 has a nozzle chamber 1311. The nozzle chamber 1311 is connected to the nozzle opening for ink ejection. The ink is ejected using a taper plunger device made of a soft magnetic material such as nickel iron material (NIFE). Plunger 1314 has a tapered end portion in addition to an interconnected nitride spring, see 1317, see 1316.

    The electromagnet device is built around the plunger 1314 and has a soft magnetic material 1319 on the outer periphery. The soft magnetic material 1319 includes a copper coil 1320 having a first end connected to a first portion of nickel iron material and a second end of the copper coil connected to a second portion of nickel iron material. Current wire iron core 1320. The circuit is formed using a bias that connects the current carrying wire and the underlying layer. The lower layer may constitute a standard CMOS component layer.

    By driving the electromagnet, the tapered plunger portion 1316 is attracted to the electromagnet. The force acting on the tapered portion is decomposed into the downward movement of the entire plunger 1314. The downward movement causes ink discharge from the ink discharge port 1312. Eventually, the electromagnet will bring the plunger into a stable state with a sufficiently flat upper surface. When the power is turned off, the plunger 1314 returns to the initial position by the energy stored in the nitride spring. The nozzle chamber 1311 is filled again with ink flowing from the ink reservoir 1323 via the inlet 1322.

    FIG. 228 is an exploded perspective view of the structure of each layer of the single nozzle 1310. The lowermost layer 1330 can be formed by etching a silicon wafer having a boron-added epitaxial layer for stopping etching. Further, the boron addition layer 1330 can be etched so as to follow the nozzle rim 1331 and the nozzle discharge port 1312 by individually masking. Next, a silicon layer 1332 is formed. The silicon layer 1332 can be formed as part of the first wafer having the boron doped layer 1330. The nozzle chamber can be substantially formed by high density low pressure plasma etching of the silicon layer 1332 to create a vertical surface, thereby forming the nozzle chamber. A glass layer 1333 is provided on the silicon layer 1332. The glass layer can include the drive and control circuitry required to move the array of nozzles 1310. The driver and control circuit can constitute a standard two-level metal CMOS circuit (not shown) interconnected with a copper coil circuit using an upper layer bias. Next, a nitride protection layer 1334 is provided to protect the lower glass layer, see 1333, from the sacrificial etch utilized in the nozzle portion configuration. A first nickel iron layer 1336 is disposed on the nitride layer 1334 followed by a copper layer 1337 and further a nickel iron layer 1338. They can be formed by a dual damascus process. A final nitride spring layer having a spring formed in a tension state is formed on the upper portion of the layer 1338 by semiconductor processing of the nitride layer 1340, and a force is slightly applied to the plunger 1314. To do. Many techniques not disclosed in FIG. 228 can be utilized in building some portions of the device 1310. For example, the nozzle chamber can be constructed utilizing the plasma etch described above, after which the nozzle chamber is filled with a sacrificial material such as glass provided to support the plunger 1314, and then the plunger 1314 is filled with the sacrificial layer. Can be formed by sacrificial etching.

    Further, the taper end portion of the nickel iron alloy can be formed using a halftone mask having a shading pattern corresponding to the desired bottom taper shape of the plunger 1314. A halftone mask can make the resist halftone and the shape transitions to the resist and then to the underlying layer, such as sacrificial glass. On top of the lower layer can be placed nickel iron material that is finally planarized using chemical mechanical planarization techniques.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
A double-side polished wafer in which epitaxial silicon heavily added with 1.3 micron boron is used is used.
2. Depending on the CMOS process used, either p-type or n-type 10 micron epitaxial silicon is placed.
3. The drive transistors, data distribution, and timing circuits are completed using a 0.5 micron, 1 poly, 2 metal CMOS process. This step is illustrated in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 229 is a heading showing various materials in these manufacturing drawings and various materials of the cross-reference inkjet structure.
4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the end of the printhead chip.
5. Using the oxide from step 4 as a mask, plasma etching is performed until silicon reaches the boron-added buried layer. This etching does not etch aluminum. This step is illustrated in FIG.
6. Place 0.5 micron silicon nitride (Si ₃ N ₄ ).
7. Place sacrificial material of 12 microns.
8). The nitride is planarized using CMP. This fills the height of the nose chamber until it reaches the chip surface. This step is illustrated in FIG.
9. Using mask 2, the nitride and CMOS oxide layers are etched until the second level metal is reached. This mask defines the contact bias from the second level metal electrode to the two-part fixed magnetic pole. This step is illustrated in FIG.
10. A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film having high saturation magnetic flux density, Nature 392, 796-798 (1998))
A 11.5 micron resist is applied and exposed and developed using the mask 3. This mask defines the bottom layer of a two-part fixed magnetic pole and the thinnest rim of the magnetic plunger. This resist acts as a mold for electroplating. This step is illustrated in FIG.
Electroplate 12.4 micron CoNiFe. This step is illustrated in FIG.
13. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).
14 The nitride layer is etched using the mask 4. This mask defines the contact bias of each end of the solenoid coil and the two-part fixed magnetic pole.
15. Place a copper seed layer.
A 16.5 micron resist is applied, and the mask 5 is used for light exposure and development. This mask defines a spiral solenoid coil and a spring post where the resist acts as an electroplating mold. This step is illustrated in FIG.
17.4 micron copper is electroplated. Copper is used because of its low resistivity (resulting in high efficiency), high electromigration, and reliability even at high current densities.
18. Strip the resist and etch the exposed copper seed layer. This step is illustrated in FIG.
19. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
20. Place 0.1 micron silicon nitride. This nitride layer provides corrosion protection and electrical insulation of the copper coil.
21. The nitride layer is etched using the mask 6. This mask defines a continuous portion of the CoNiFe intermediate layer and lower layer.
22. A 4.5-micron resist is applied and exposed and developed using a mask 6. This mask defines a two-part fixed magnetic pole and an intermediate rim of the magnetic plunger. The resist forms an electroplating mold for those parts. This step is illustrated in FIG.
Electroplate 23.4 micron CoNiFe. The lowest layer of CoNiFe acts as a seed layer. This step is illustrated in FIG.
24. A seed layer of CoNiFe is placed.
A resist of 25.4.5 microns is applied, exposed using a mask 7 and developed. This mask defines the top layer of the two-part fixed magnetic pole and the top of the magnetic plunger. The resist forms an electroplating mold for those parts. This step is illustrated in FIG.
Electroplate 26.4 micron CoNiFe. This step is shown in FIG.
Place a 27.1 micron sacrificial material.
28. The sacrificial material is etched using the mask 8. This mask defines the junction between the split magnetic pole, the magnetic plunger and the nitride spring.
This step is shown in FIG.
29. Place 0.1 micron low stress silicon nitride.
30. Place 0.1 micron high stress silicon nitride. These two layers of nitride form a prestressed spring that lifts the magnetic plunger out of the core space of the fixed magnetic pole.
31. Etch two layers of nitride using mask 9. This mask defines a nitride spring. This step is shown in FIG.
32. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
33. Using the mask 10, plasma back etching is performed on the silicon layer doped with (about) 1 micron boron. This mask defines the rim of the nozzle. This step is illustrated in FIG.
34. Plasma back etching is performed using the mask 11 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. This step is illustrated in FIG.
35. Separate the chip from the glass blank. Strip all adhesive, resist, sacrificial and exposed seed layers. At this step, the nitride spring is released and lifted from the fixed magnetic pole by 3 microns.
This step is shown in FIG.
36. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
37. Connect the printhead to the relay device.
38. Hydrophobize the front surface of the print head.
39. Fill the completed printhead with ink and test. A nozzle filled with ink is shown in FIG.

Explanation of IJ15 S
The present invention provides a magnetically actuated inkjet print nozzle that ejects ink from an ink chamber. Magnetically actuated ink jets utilize linear springs. The linear spring increases the amount of movement of the shutter grille that prevents ink pressure fluctuation when the nozzle is closed. However, when the shutter is open, the pressure change is transmitted directly to the nozzle chamber. As a result, ink ejection from the chamber can occur. In order to change the ink pressure in the ink fountain, the ink is discharged from the nozzle with the shutter grille opened.

    In FIG. 249, an embodiment of the nozzle structure when in a resting or closed state is shown. Device 1410 includes a shutter structure 1411 with shutters 1412, 1413. They are interconnected at one end with 1415 to provide structural stability. The shutters 1412 and 1413 are interconnected with the movable bar 1416 at the other end. Further, the movable bar is connected to the stationary bar 1418 via leaf springs 1420 and 1421. The bar 1416 may be made of a soft magnetic material (NiFe).

    An electromagnetic force actuator is utilized to pull the bar 1416 generally in the direction 1425. This electromagnetic force actuator is composed of a soft iron claw having a copper coil wire 1426 around it. The electromagnetic force actuator can be composed of actuators 1428-1430 interconnected through copper coil wires. Accordingly, when the shutter 1412-1413 is opened, the coil 1426 is operated to draw the bar 1416 toward the electromagnets 1428-1430. The attraction 1425 causes the linear springs 1420 and 1421 to interact, and the shutters 1412 and 1413 move to the open position as shown in FIG. As a result, the inlets 1432 and 1433 are opened to the ink discharge chamber 1434 and ink can be discharged through the ink discharge nozzle 1436.

    Linear springs 1420, 1421 are designed to increase shutter movement as a result of actuation by a factor of eight. A 1 micron movement of the bar towards the electromagnet results in a lateral movement of 8 microns. This can dramatically improve system efficiency. This is because the magnetic field is greatly attenuated with distance, but the linear spring has a linear relationship in the movement between one axis and the other axis. The use of linear springs 1420, 1421 makes it possible to easily achieve the required relative significant movement.

    The surface of the wafer is directly immersed in an ink fountain or associated large ink groove. An ultrasonic transducer (e.g., a piezoelectric transducer) (not shown) is disposed in the cage. This transducer oscillates the ink pressure at about 100 kHz. If not blocked by the shutters 1412 and 1413, ink droplets are discharged from the nozzles by the vibration of the ink pressure. When the data signal output to the print head instructs the discharge of ink from a specific nozzle, the drive transistor for that nozzle is activated. This drives the actuators 1428-1430 to move the shutter and prevent the ink chamber from being blocked. Ink is ejected from the nozzle due to the peak of pressure change of the ink. When the ink pressure acts in a negative direction, the ink returns to the nozzle and the ink droplets are separated. Shutters 1412 and 1413 remain released until the next positive pressure cycle is applied to the nozzle. Then, in the next negative pressure cycle, the ink is closed so as not to be drawn from the nozzle.

    Ink discharge requires two ink pressure cycles. Preferably, half of the nozzles eject ink drops in one phase and the other half ejects ink drops in the other phase. This minimizes pressure fluctuations that can be caused by operating a large number of nozzles.

    The amplitude of the ultrasonic transducer further varies depending on the viscosity of the ink (generally affected by temperature) and the number of ink drops to be ejected in the current cycle. This amplitude adjustment is used to keep the drop size constant during various environmental changes.

    In order to describe the nozzle chamber 1434, the portion indicated by line I in FIG. The nozzle chamber 1434 can be constructed using anisotropic crystallographic etching of a silicon substrate. Etching through the substrate can form shutter grille grooves 1432 and 1422.

    The device is formed on <100> silicon with an etch stop layer 1440 with boron buried, but rotated 45 ° with respect to the <010> <001> plane. As a result, the <111> plane that stops the crystallographic etching of the nozzle chamber forms a 45 ° rectangle on which the groove of the fixed grill is formed. This etch proceeds fairly slowly to limit the contact of the etchant with the silicon. However, it is etched simultaneously with a large amount of silicon etching that thins the bottom of the wafer.

    An exploded perspective view of each layer in the structure of the inkjet print head 1410 is shown in FIG. These layers include a boron doped layer 1440. The boron buried layer acts as an etch stop and can also be obtained from back-etching a silicon wafer with an embedded epitaxial layer, well known as a microelectromechanical system (MEMS). For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in The side of the nozzle chamber is formed by crystallographic etching of a wafer 1441 having a boron addition layer 1440 used as an etch stop material.

    The next layer 1442 is configured as a drive transistor and printer logic, and includes a two-level metal CMOS processing layer 1442. The CMOS processing layer is covered by a nitride layer 1443 that includes a 1444 portion that covers and protects the sides of the CMOS layer 1442. The copper layer 1445 can also be constructed using a dual damascus process. Finally, a soft metal layer (NiFe) 1446 is provided to form the remainder of the actuator. Both layers 1444 and 1445 are separately coated with a nitride protective layer (not shown), which provides passivation and protection and can be standard 0.1 μm treatment. .

    Therefore, the apparatus of FIG. 249 provides an inkjet nozzle having a high firing rate (approximately 50 kHz) suitable for assembly of an aligned inkjet nozzle array for assembly as a monolithic page width printhead.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
1. A 3 micron epitaxial silicon doped with heavy boron is placed on the double-side polished wafer.
2. Depending on the CMOS process used, 10 micron epitaxial silicon of p-type or n-type is disposed.
3. The drive transistor, data distribution, and timing circuit are completed using 0.5 micron, 1 poly, 2 metal CMOS processing. A related drawing of the wafer in this step is shown in FIG. For ease of understanding, these figures are shown on a knot scale and do not show a cross-section on a single face of the nozzle. FIG. 253 is a heading showing various materials and cross-reference inkjet configurations in these manufacturing drawings.
4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the end of the printhead chip. This step is defined in FIG.
5. For example, crystallographic etching is performed on the exposed silicon using KOH or EDP (ethylenediamine pyrocatechol). This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is illustrated in FIG.
6. Place sacrificial material of 12 microns. Using CMP, the oxide is planarized. Temporarily, the sacrificial material fills the nozzle holes. This step is shown in FIG.
7. Place 0.5 micron silicon nitride (Si ₃ N ₄ ).
8). Using the mask 3, the nitride and oxide are etched until the aluminum or sacrificial material is reached. This mask defines a contact via from the aluminum electrode to the solenoid as well as a fixed grill on the nozzle cavity.
This step is illustrated in FIG.
9. Place a copper seed layer. Copper is used because of its low resistivity (resulting in high efficiency), high electromigration, and reliability even at high current densities.
A 10.2 micron resist is applied, exposed using mask 4 and developed. This mask defines the underside of the solenoid square winding. The resist acts as an electroplating mold. This step is shown in FIG.
11.1 micron copper is electroplated. This step is illustrated in FIG.
12 Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.
13. Place 0.1 micron silicon nitride.
14. Place 0.5 micron sacrificial material.
15. The sacrificial material is etched down to nitride using the mask 5. The mask defines a solenoid, a fixed magnetic pole, and a linear spring fixing device. This step is illustrated in FIG.
16. A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
17.3 micron resist is applied, exposed using mask 6 and developed. This mask defines all the soft magnetic parts, a U-shaped fixed magnetic pole, a linear spring, a linear spring fixing device, and a shutter grille. The resist acts as an electroplating mold. This step is shown in FIG.
18.2 micron CoNiFe is electroplated. This step is shown in FIG.
19. Strip the resist and etch the exposed seed layer. This step is shown in FIG.
20. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).
A 21.2 micron resist is applied, exposed using a mask 7 and developed. The mask defines a solenoid vertical wire segment and the resist acts as an electroplated form of the wire segment. This step is illustrated in FIG.
22. Etch nitride to copper using mask 7 resist.
Electroplate 23.2 micron copper. This step is shown in FIG.
24. Place a copper seed layer.
A 25.2 micron resist is applied, exposed using the mask 8, and developed. This mask defines the upper side of the solenoid square winding. The resist acts as an electroplating mold. This step is illustrated in FIG.
26.1 micron copper is electroplated. This step is shown in FIG.
27. Strip the resist and etch the exposed seed layer. This step is illustrated in FIG.
28. Place 0.1 micron conformal silicon nitride as a corrosion barrier.
29. The bond pad is opened using the mask 9.
30. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
31. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
32. Using the mask 9, plasma back etching is performed on the silicon layer to which boron of 1 micron is added. This mask defines the rim of the nozzle. This step is shown in FIG.
33. Plasma back etching is performed using the mask 10 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are separated but still provided on the glass blank. This step is shown in FIG.
34. Separate the chip from the glass blank. Strip all adhesive, resist, sacrificial and exposed seed layers. This step is shown in FIG.
35. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer. The container is also provided with a piezoelectric actuator attached behind the ink groove. Piezoelectric actuators provide the fluctuating ink pressure required for ink ejection.
36. Connect the printhead to the relay device.
37. Hydrophobize the front surface of the print head.
38. Fill the completed printhead with ink and test. A nozzle filled with ink is shown in FIG.

Explanation of IJ16 F
In this embodiment, the partition is driven using Lorentz force acting on the wire through which a current in a magnetic field flows, and ink is ejected from the nozzle chamber via the nozzle hole.

  The magnetic field is stationary and is supplied by a permanent magnet yoke around the nozzles of the inkjet head.

    First, reference is made to FIG. FIG. 14 illustrates a single inkjet nozzle chamber apparatus 1510 constructed according to an embodiment. Each inkjet nozzle includes a corrugated septum 1511 supported on a nozzle chamber having an ink port 1513 for ink ejection. The partition 1511 is constructed from a number of layers having a planar copper coil layer composed of a number of copper coils, which form a circuit through which current flows across the partition 1511. All of the current in the wire of the partition coil portion 1511 flows in the same direction. FIG. 283 is a perspective view of a current circuit used to construct a single inkjet nozzle, and the partition 1511 of FIG. 276 illustrates the waveform structure of the trajectory. As a result of the arrangement of the permanent magnet yoke (not shown), a magnetic field 1516 is generated on the chip surface and is perpendicular to the direction of the current intersecting the bulkhead coil 1511.

    A cross-sectional view of the inkjet nozzle 1510 taken along line A-A1 of FIG. 276 when the septum 1511 is driven by a current through the coil wire 1514 is shown in FIG. As a result of the partition wall 1511 being entirely pressed toward the nozzle 1513, the ink in the chamber 1518 is discharged from the discharge port 1513. The partition wall 1511 and the chamber 1518 are connected to the ink fountain 1519, and ink is discharged from the ink fountain 1519 to the chamber 1518 as a result of the ink being discharged through the discharge port 1513.

  The movement of the partition wall 1511 is caused by Lorentz interaction between the coil current and the magnetic field.

  The partition wall 1511 was corrugated so that the partition wall motion occurred as an elastic bending motion. This is important to prevent the flat partition from bending due to tensile stress.

    When the data signal distributed to the print head indicates ink ejection for a particular nozzle, the drive transistor for that nozzle moves. This applies an electric current to the coil 1514, causing a resilient deformation of the partition 1511 downward, and ink is released. After approximately 3 μs, the coil current is cut off and the septum returns to the rest position. When the partition wall returns, the ink is drawn back into the nozzle, and the connection between the ink droplet 1520 and the ink in the nozzle becomes thin. The speed at which the ink drop in the chamber 1518 advances and the speed at which the ink returns later causes separation of the ink drop 1520 in the nozzle. Then, the ink droplet 1520 continues toward the recording medium. Ink replenishment of the nozzle chamber 1518 is performed via two grooves 1522 and 1523 at both ends of the partition wall. Ink replenishment is caused by the surface tension of the ink meniscus at the nozzle.

    As shown in FIG. 278, the corrugated partition may be formed by a resist layer 1530 disposed on the sacrificial glass layer 1531. The resist layer 1530 is exposed using a mask 1532 having a halftone pattern that draws a waveform. After development, the resist 1530 has a corrugated pattern, as illustrated in FIG. The resist layer 1530 and the sacrificial glass layer are etched using a corrosive solution that corrodes the resist 1530 at approximately the same rate as the sacrificial glass 1531. A change in the waveform pattern of the sacrificial glass layer 1531 is illustrated in FIG. As illustrated in FIG. 281, a nitride passivation layer 1534 is then placed next to the copper layer 1535 made using a coil mask. Further a nitride passivation layer 1536 is disposed, followed by a copper layer 1535. Grooves 1522, 1523 in the nitride layer on the side walls of the partition can be etched (FIG. 276). The sacrificial glass layer is then removed by etching leaving a corrugated barrier.

    FIG. 282 illustrates an exploded perspective view of each layer of the ink jet nozzle 1510. Inkjet nozzle 1510 is configured on a silicon wafer having an epitaxial layer 1540 in which boron is buried. Layer 1540 is back-etched in the final step and has ink drain holes 1513. The silicon substrate 1541 is etched anisotropically (as described below) to form a nozzle chamber structure. Above the silicon substrate layer 1541 is a CMOS layer 1542. The CMOS layer 1542 can also include a two level metal drive circuit and a control circuit. Above the CMOS layer 1542 is a first passivation layer. The first passivation layer can also be composed of silicon nitride that protects the lower layer from subsequent etching steps. On top of this layer is placed a copper layer 1545 with a through hole from 1546 to the CMOS layer for supplying current, for example. Above the copper layer 1545 is a second nitride passivation layer 1547. The second nitride passivation layer protects and insulates the copper layer from the ink.

    The nozzle 1510 can be configured as part of a nozzle array formed on a single wafer. After assembly, the wafer making up the nozzle 1510 can be bonded to a second ink supply wafer having ink channels for ink supply. Such a nozzle 1510 is effectively supplied with an ink fountain, and discharges ink through a hole 1513 on the recording medium as required.

    The nozzle chamber 1518 is formed using anisotropic crystallographic etching of a silicon substrate. The corrosive liquid reaches the substrate via the grooves 1522 and 1523 on the side surfaces of the partition walls. The device is formed on <100> silicon (with an etch stop layer with boron buried) but rotates 45 ° relative to the <010> <001> plane. Thus, the surface <111> that stops the crystallographic etching of the nozzle chamber forms a 45 ° rectangle with slots formed in the nitride layer. Etching proceeds slowly to limit the contact of the etchant with silicon. However, etching can be performed simultaneously with the bulk silicon etching that thins the wafer. The ink firing speed is approximately 7 kHz. The ink jet head is suitable for construction as a monolithic page width print head. This figure represents a single nozzle of a 1600 dpi printhead in a 'down fire' configuration.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
1. A 3 micron epitaxial silicon doped with heavy boron is placed on the double-side polished wafer.
2. Depending on the CMOS process used, 10 micron epitaxial silicon of p-type or n-type is disposed.
3. The drive transistors, data distribution and timing circuits are completed in 0.5 micron, 1 poly, 2 metal CMOS process. A related drawing of the wafer in this step is shown in FIG. For ease of understanding, these figures are shown on a knot scale and do not show a cross-section on a single face of the nozzle. FIG. 284 shows key displays showing various materials and various materials constituting the ink jet structure in the drawings showing these manufacturing processes.
4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the end of the printhead chip. This step is shown in FIG.
5. For example, crystallographic etching is performed on the exposed silicon using KOH or EDP (ethylenediamine pyrocatechol). This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is shown in FIG.
6. Place 12 micron sacrificial material (polyimide). Using CMP, the oxide is planarized. Temporarily, the sacrificial material fills the nozzle holes. This step is shown in FIG.
7. Place 1 micron (sacrificial) photosensitive polyimide.
8). Photosensitive polyimide is exposed and developed using the mask 2. This mask is a gray scale mask that defines a flexible membrane ridge that encompasses the central portion of the solenoid. The etching results in a series of ridges on the triangle beyond the entire length of the ink pressing film. This step is shown in FIG.
9. Place 0.1 micron PECVD silicon nitride (Si ₃ N ₄ ).
10. The nitride layer is etched using the mask 3. This mask defines the contact bias from the solenoid coil to the second level metal contact.
11. Place a copper seed layer.
A 12.2 micron resist is applied and exposed and developed using a mask 4. This mask defines a solenoid coil. The resist acts as an electroplating mold. This step is illustrated in FIG.
13. Electroplate copper of 1 micron. Copper is used because of its low resistivity (resulting in high efficiency), high electromigration, and reliability even at high current densities.
14 Strip the resist and etch the exposed copper seed layer. This step is shown in FIG.
15. Place 0.1 micron silicon nitride (Si ₃ N ₄ ).
16. The nitride layer is etched using the mask 5. This mask defines the edges of the ink pressing film and the bond pads.
17. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
18. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
19. Using the mask 6, plasma back etching is performed on the silicon layer to which boron of 1 micron is added. This mask defines the rim of the nozzle. This step is shown in FIG.
20. Plasma back etching is performed using the mask 7 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are still provided on the glass blank. This step is shown in FIG.
21. The adhesive layer is peeled off and the chip is separated from the glass blank. Etch the sacrificial layer. In this process, the chip is completely separated. This step is illustrated in FIG.
22. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
23. Connect the printhead to the relay device.
24. Hydrophobize the front surface of the print head.
25. Fill the ink, apply a strong magnetic field to the chip surface, and test the finished printhead. A nozzle filled with ink is shown in FIG.

Description of IJ25 F
In this embodiment, a nozzle chamber having a magnetostrictive actuator surrounded by an ink discharge port and an electric coil is provided. As a result, when the coil is activated, a magnetic field is generated that gives the actuator the effect of causing the actuator to eject ink from the nozzle chamber.

FIG. 297 shows a perspective perspective sectional view of a single inkjet nozzle device 2410.
The nozzle device has a nozzle chamber 2411 that opens a nozzle outlet 1412 for discharging ink.

    The nozzle 2410 is formed on a large silicon wafer with multiple print heads formed simultaneously from a group of nozzles. The nozzle holes 2412 are formed by back-etching the silicon wafer to the level of the epitaxial layer 2413 doped with boron. Subsequently, the layer 2413 is etched using an appropriate mask to form a nozzle port 2412 that includes a rim 2415. The nozzle chamber 2411 is further formed from crystallographic etching of the remaining portion of the silicon wafer 2416. Crystallographic etching processes are well known in the field of microelectromechanical systems (MEMS). For a general introduction to micro-electromechanical systems (MEMS), this area, including newsletters in the International Society for Optical Engineering (SPIE) volumes 2642 and 2882, which describes recent developments in this area and actions related to meetings Reference is made to the standard procedures in

    FIG. 297 shows an exploded perspective view of the configuration of the single inkjet nozzle arrangement 2410 of the embodiment.

    A two-level metal CMOS layer 2417 is disposed on a silicon wafer 2416 (not shown) that encloses a pre-constructed aluminum layer. CMOS layer 217 is constructed to provide control circuitry and data for inkjet nozzle 2410. A nitride passivation layer 2420 having a nitride paddle portion 2421 is constructed on the CMOS layer 2417. The nitride layer 2421 uses a sacrificial material such as glass to fill the nozzle chamber 42411 where the crystallographic etching was first performed, and then the sacrificial layer is etched away to release the nitride layer 2421. A Terfenol (terphenol) -D layer 2422 is disposed on the nitride layer 2421. Telefenol-D is a substance having high magnetostriction (details of properties of Terfenol-D, “magnetoelasticity, theory, and application of magnetoelasticity” “from Etienne du Tremolette de Lachisserie, 1993 CRC Press”). Terfenol-D material expands under the influence of a magnetic field. The Terfenol-D layer 2422 is attached to the underlying nitride layer 2421 that is not affected by expansion. As a result, the force acts so that the nitride layer 2421 bends toward the nozzle discharge hole 2412, and ink discharge occurs from the ink discharge port 2412.

    Telefenol-D layer 2422 is passivated by nitride layer 2423. Above the nitride layer 2423 is a copper coil layer 2424 connected to the underlying CMOS layer 2417 via a series of vias. As a result, the copper coil layer 2424 is driven. Driving the copper coil layer 2424 generates a magnetic field 2425 that intersects the Terfenol-D layer 2422. This causes a change in state in the Terfenol-D layer 2422. As a result, in order to eject ink from the nozzle chamber 2411, the state of the Terfenol-D layer 2422 is changed, the actuator 2426 (FIG. 297) bends in the direction of the ink ejection port 2412, and ink droplet ejection occurs. When the upper coil layer 2424 is deactivated, the actuator 2426 (FIG. 297) returns to the rest position, some ink returns to the nozzle chamber, and the ink droplets and ink in the nozzle chamber become less bonded. The speed at which the ink drop travels and the speed at which the ink in the chamber 2411 moves back causes separation of the ink drop from the nozzle chamber 2411. Ink replenishment of the nozzle chamber 2411 is performed via the side surface of the actuator 2426 (FIG. 297) as a result of the surface tension of the ink meniscus at the discharge port 2412.

    Copper layer 2424 is passivated by a nitride layer (not shown) and nozzle arrangement 2410 abuts ink supply basin 2428 (FIG. 297).

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
1. A 3 micron epitaxial silicon doped with heavy boron is placed on the double-side polished wafer.
2. Depending on the CMOS process used, 20 micron epitaxial silicon of p-type or n-type is placed.
3. The drive transistor, data distribution and control circuit is completed using a 0.5 micron, 1 poly, 2 metal CMOS process. This metal layer has a high current density and as a result can be processed at high temperature, so copper is used instead of aluminum. A related diagram of the wafer in this step is shown in FIG. For ease of understanding, these figures are shown on a knot scale and do not show a cross-section on a single face of the nozzle. FIG. 299 shows key displays showing various materials and various materials constituting the inkjet structure in the drawings showing these manufacturing processes.
4). The mask 1 is used to etch the CMOS oxide layer until it reaches the silicon. This mask defines a nozzle chamber. This step is shown in FIG.
5. Place 5.1 micron low stress PECVD silicon nitride (Si ₃ N ₄ ).
6). A seed layer of Terfenol-D is arranged.
7.3-micron resist is placed and exposed using mask 2. This mask defines the actuator beam. The resist forms a Terfenol-D electroplating mold. This step is shown in FIG.
Electroplate 8.2 micron Terfenol-D.
9. Strip the resist and etch the seed layer. This step is shown in FIG.
10. The nitride layer is etched using the mask 3. This mask defines the contact bias from the actuator beam and nozzle chamber, solenoid coil to the second level metal contact. This step is shown in FIG.
11. Place a copper seed layer.
A 12.22 micron resist is placed and exposed using a mask 4. This mask defines a solenoid and has a very high aspect ratio and should be exposed using an X-ray proximity mask. The resist forms a copper electroplating mold. This step is shown in FIG.
13. Electroplate 20 micron copper.
14 Strip the resist and etch the copper seed layer. Steps 10 to 13 form a LIGA stroke. This step is shown in FIG.
15. For example, crystallographic etching is performed on the exposed silicon using KOH or EDP (ethylenediamine pyrocatechol). This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is shown in FIG.
16. As a corrosion barrier, 0.1 micron of ECR diamond such as carbon (DLC) is arranged (not shown).
17. The bond pad is opened using the mask 5.
18. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
19. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is shown in FIG.
20. Using the mask 6, plasma back etching is performed on the silicon layer to which boron of 1 micron is added. This mask defines the rim of the nozzle. This step is shown in FIG.
21. Plasma back etching is performed using the mask 6 through the layer to which boron is added. This mask defines nozzles and chip edges. Etch a thin ECR DLC layer through the nozzle hole. This step is illustrated in FIG.
22. Peel the adhesive layer to separate the chips from the glass blank.
23. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
24. Connect the printhead to the relay device.
25. Hydrophobize the front surface of the print head.
26. Fill the completed printhead with ink and test. A nozzle filled with ink is shown in FIG.

Description of IJ26 F In this example, a shape memory material is used to construct an actuator suitable for ejecting ink from the nozzles of the ink chamber.

    FIG. 312 shows an exploded perspective view 2510 of a single nozzle constructed according to this embodiment. The ink-jet nozzle 2510 is composed of a silicon wafer substrate obtained by performing back etching on the wafer to an epitaxial layer to which boron is added. For this reason, the inkjet nozzle 2510 has a layer 2511 constructed from boron-doped silicon. This boron buried silicon layer is also used as a liquid crystallographic etch stop layer. The next layer is composed of a silicon layer 2512 with crystallographic holes side etched at a normal angle of 54.74 degrees. Layer 2512 also has a number of required circuit configurations and transistors, such as a CMOS layer (not shown). Thereafter, a 0.5 micron thick thermal silicon oxide layer 2515 is formed on the silicon wafer 2512.

    After this, there are various layers that can constitute a two-level metal CMOS processing layer interconnected to a CMOS transistor formed in layer 2512. Except for the two interconnected metal connections 2518, 2519 between the shape memory alloy layer 2520 and the CMOS metal layer 2516, various metal paths and the like are not shown in FIG. A shape memory metal layer is then placed. The shape memory metal layer forms a tortuous coil that is heated at the end metal connections / vias 2521, 2523. The top nitride layer 2522 provides overall passivation and protection of the underlying layer, in addition to providing a means including tensile stress that bends the dormant shape memory alloy layer upward.

    The examples rely on the thermal change of shape memory alloy 2520 (SMA) that changes from martensite phase to austenite phase. The basis of the shape memory effect is a martensitic transformation that generates a Polydemane phase during cooling. This Polydemane phase accepts a finite reversible mechanical deformation without causing a large change in the mechanical self-energy of the system. Therefore, subsequent re-transformation to the austenite state causes the system to return to the previous macroscopic state, showing well-known mechanical memory. The change in heat is caused by a current flowing through the SMA. The actuator layer 2520 is supported at the inlet of the nozzle chamber 2513, connected to the via leads 2518, 2519 to the lower layer.

    FIG. 313 shows a cross section of the single nozzle 2510 in the supply state. This is a cross section taken along line AA in FIG. Actuator 2530 is bent away from the nozzle when in the rest state.

    FIG. 314 shows a corresponding cross-section of the activated single nozzle 2510. When actuated by applying voltage, the actuator 2530 is straightened and ink is pushed out of the nozzle. In the process of applying the voltage to the actuator 2530 and operating the actuator 2530, it is required to supply sufficient energy to raise the temperature of the SMA above the transition temperature and supply latent heat for promoting the transformation of the SMA 2520.

    As can be seen, the SMA in the martensite state is prestressed because it has a different shape from the austenite phase. For a printhead having a large number of nozzles, it is important to prestress by a simple technique. This is accomplished by placing a layer of silicon nitride layer 2522 over the SMA layer using plasma assisted chemical vapor deposition (PECVD) at approximately 300 ° C. The deposit occurs while the SMA is in the austenitic state. After the print head cools to room temperature, the circuit board under the SMA bending actuator is removed by chemical etching of the sacrificial material. The silicon nitride layer 2522 is under tensile stress and the actuator bends upward. The weak martensitic phase of SMA is slightly resistant to this bending. When the SMA is heated to the austenite layer, it returns to a flat shape that was annealed while the nitride was placed. The transformation is at a rate sufficient to eject the nozzle from the nozzle chamber.

    There is one SMA bending actuator 2320 for each nozzle. One end 2531 of the SMA bending actuator is mechanically coupled to the substrate. The other end is not fixed to move under the stress inherent in the layer.

    FIG. 312 shows an actuator layer composed of three layers.

1. SiO ₂ lower layer 2515. This layer serves as a pressure 'reference' for the nitride tension layer. This layer also protects the SMA from crystallographic silicon etching that forms the nozzle chamber. This layer can also be formed as part of a standard CMOS process for the printhead drive electronics.

  2. SMA heating layer 2520. An SMA, such as a nickel titanium (NiTi) alloy, is placed and etched into a tortuous shape to increase electrical resistance.

3. Silicon nitride top layer 2522. This is a highly rigid thin layer that is placed using PECVD. The nitride stoichiometry is adjusted to complete a layer with significant tensile stress at room temperature for the SiO ₂ phase. The purpose is to bend the actuator in the low temperature martensite phase.

  As previously mentioned, the inkjet nozzle of FIG. 312 may be constructed by using a silicon wafer having an epitaxial layer with embedded boron. A 0.5 micron thick dioxide layer 2515 is formed having lateral grooves 2545 that are used in subsequent crystallographic etching. Next, various CMOS layers 2516 are formed including a driving device and a control circuit (not shown). The SMA layer 2520 is formed on top of the layers 2515 and 2516 and is connected to the driving circuit. Thereafter, a silicon nitride layer 2522 is formed on top. Each layer 2515, 2516, 2522 has a number of grooves, such as 2545 used in later crystallographic etching. The silicon wafer is then thinned by back etching using a boron layer 2511 that stops etching. Later boron etching forms nozzle holes, such as 2547 and rim 2546 (FIG. 314). A chamber is then formed using crystallographic etching with a trench 2545 that defines an extension of etching within the silicon oxide layer 2512.

    A large nozzle array is formed on the same wafer. On the other hand, the wafer is combined with an ink chamber to fill the nozzle chamber.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
1. A 3 micron epitaxial silicon doped with heavy boron is placed on the double-side polished wafer.
2. Depending on the CMOS process used, 10 micron epitaxial silicon of p-type or n-type is disposed.
3. The drive transistor, data distribution and timing circuit is completed with 0.5 micron, 1 poly, 2 metal CMOS process. A related drawing of the wafer in this step is shown in FIG. For ease of understanding, these figures are shown on a knot scale and do not show a cross-section on a single face of the nozzle. FIG. 315 shows key displays showing various materials and various materials constituting the ink jet structure in the drawings showing these manufacturing processes.
4). The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. This mask defines the nozzle chamber and the end of the printhead chip. This step is shown in FIG.
5. For example, crystallographic etching is performed on the exposed silicon using KOH or EDP (ethylenediamine pyrocatechol). This etching is stopped on the crystal plane (111) and on the silicon buried layer to which boron is added. This step is illustrated in FIG.
6. Place sacrificial material of 12 microns. Using CMP, the oxide is planarized. Temporarily, the sacrificial material fills the nozzle holes. This step is illustrated in FIG.
High stress silicon nitride 7.0.1 microns _(Si 3 _{N 4)} is arranged.
8). The nitride layer is etched using the mask 2. This mask defines the contact bias from the shape memory heater to the second level metal contact.
9. Arrange the seed layer.
A 10.2 micron resist is applied, exposed using mask 3 and developed. This mask defines a shape memory wire embedded in the paddle. The resist acts as an electroplating mold. This step is illustrated in FIG.
Electroplating 11.1 micron Nitinol. Nitinol is a nickel and titanium 'shape memory' alloy (hence Ni-Ti-NOL) made at the US Navy Munitions Research Institute. Shape memory alloys can switch between a weak martensite state and a highly rigid austenite state by heat.
12 Strip the resist and etch the exposed seed layer. This step is shown in FIG.
13. Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
14. Place 0.1 micron high stress silicon nitride. As a result of the use of high stress nitride, the sacrificial material is etched, the paddles are removed, and the stress of the nitride layer bends a relatively weak martensitic phase shape memory alloy. When the shape memory alloy is annealed by exposing the silicon nitride layer to a relatively high temperature, it flattens (in the austenite phase), so that when heated electrically, it returns to a flat state.
15. The wafer is provided on a glass blank, and the wafer is back-etched using KOH without using a mask. By this etching, the wafer becomes thin, and the etching is stopped at the buried silicon layer to which boron is added. This step is illustrated in FIG.
16. Plasma back etching is performed on the silicon layer to which boron of 1 micron is added using the mask 4. This mask defines the rim of the nozzle. This step is shown in FIG.
17. Plasma back etching is performed using the mask 5 through the layer to which boron is added. This mask defines nozzles and chip edges. At this stage, the chips are still provided on the glass blank. This step is shown in FIG.
18. The adhesive layer is peeled off and the chip is separated from the glass blank. Etch the sacrificial layer. In this process, the chip is completely separated. This step is illustrated in FIG.
19. Mount the printhead on the container. The container may be a plastic molded member into which ink grooves are introduced to supply different color inks to appropriate areas on the front surface of the wafer.
20. Connect the printhead to the relay device.
21. Hydrophobize the front surface of the print head.
22. Test the completed printhead filled with ink. A nozzle filled with ink is shown in FIG.

Description of F of IJ45 This embodiment is an ink jet print head composed of a series of nozzle devices, and each nozzle device is driven by a coil through which a pulse flows, and an electromagnetic force plate that ejects ink by moving a magnet plate It has an actuator. The movement of the magnet plate elastically stretches the leaf spring device, and when the coil is deactivated, the magnet plate returns to the rest position and ink drops are ejected from holes made in the plate.

    In FIGS. 327 to 329, the operation of the embodiment is described.

    FIG. 327 shows an inkjet nozzle arrangement 4401 that includes a nozzle chamber 4402 that is coupled to an ink ejection nozzle 4403. The ink meniscus 4404 is formed on the nozzle 4403 when in the rest position. The nozzle 4403 is formed on the magnet nozzle plate 4405. The magnet nozzle plate 4405 may be constructed from a ferrous material. Joined to the nozzle plate 4405 is a series of leaf springs, for example 4406, 4407 that bias the nozzle plate 4405 away from the substrate 4409. A conductive coil 4410 is connected between the nozzle plate 4405 and the substrate 4409 via a lower layer circuit 4411 that can form a standard CMOS circuit layer. The ink chamber 4402 is filled with ink from the lower ink supply groove 4412 formed by etching through the semiconductor wafer 4413. The ink chamber 4402 is interconnected with the ink supply groove by a series of grooves 4414 that can be etched through the CMOS layer 4411.

    As a result of the hydrophobic processing around the coil 4410, a small meniscus, eg 4416, 4417, is formed between the nozzle plate 4405 and the substrate 4409 during operation.

    The coil 4410 is activated when it is desired to eject ink. As a result, movement of the plate 4405 occurs as shown in FIG. As a result of the overall downward movement of the plate 4405, the pressure in the nozzle chamber 4402 increases. As a result of this increase in pressure, the ink flow from the nozzle chamber 4403 rapidly increases in the meniscus. The movement of the plate 4405 results in general elastic stretching of the springs 4406, 4407. Due to the narrow width of the groove 4414, the flow of ink into the nozzle chamber 4412 is minimal.

    Shortly thereafter, as shown in FIG. 329, the coil 4410 is deactivated and the plate 4405 is returned to the rest position by the springs 4406, 4407 acting on the nozzle plate. Returning the nozzle plate 4405 to the rest position causes a rapid decrease in pressure within the nozzle chamber 4402, followed by an overall backflow of ink around the nozzle 4403. Outside the nozzle plate 4403, the momentum to advance before the ink and the reverse suction of the ink around the ejection nozzle 4403 are separated by forming the ink droplet 4419, and the ink droplet continues to advance to the print medium.

    The ink from the ink supply groove 4412 flows due to the characteristic of the surface tension across the nozzle 4403 before reaching the rest position in FIG. 327 again. Thus, the coil-driven magnetic inkjet printhead generates ink drops on demand. Importantly, the area around the coil 4410 is hydrophobically processed so that ink does not flow into the area.

    FIG. 330 shows a partial cross-sectional side perspective view of a single nozzle device constructed in accordance with the principles outlined previously for FIGS. 327-329. The apparatus 4401 has a nozzle plate 4405 and an ink ejection nozzle 4403 formed around the ink supply chamber 4402. A series of leaf spring elements 4406-4408 are also provided, which can also form the nozzle plate 4405 from the same material. A substrate 4409 for receiving the coil 4410 is also provided. Wafer 4413 has a series of grooves 4414 for carrying ink to nozzle chamber 4402. The nozzle chamber 4402 is connected to the ink supply groove 4412 via a groove. Groove 4414 has a thin, elongated shape and provides fluid resistance to rapid fluid exit from chamber 4402.

    The coil 4410 is conductively connected at a predetermined position (not shown) to a lower CMOS layer for controlling the operation of the coil 4410 and the movement of the base plate 4405. Also, the substrate 4409 can be a semi-circular plate divided into two, and the coil 4410 is divided through one of the semi-circular plates connected to the lower CMOS layer. It can also be configured to have an open end.

    As can be seen, the inkjet nozzle device array can be formed at once on a single silicon wafer to form multiple printheads.

One of the detailed manufacturing processes that can be used to manufacture a monolithic inkjet printhead that operates based on the main teaching of this embodiment can be carried out with the following steps.
1. The double-side polished wafer is used to complete a 0.5 micron single layer polysilicon two layer metal CMOS process. Due to the high current density, both metal layers use copper for resistance to electromigration. This step is illustrated in FIG. For the sake of clarity, these diagrams are shown on a knot scale and do not represent a cross-section on a single face of the nozzle. FIG. 331 is a heading showing the various materials of these recipes and the cross-reference inkjet configuration.

  2. The mask 1 is used to etch the CMOS oxide layer until it reaches silicon or aluminum. A bias is defined for the connection from the cross groove at the entrance of the nozzle chamber, the end of the printhead chip, and the two halves of the two-part fixed magnetic plate from the two-level metal electrode.

3. Plasma etch silicon at a depth of 15 microns using the oxide from step 2 as a mask. This etch does not etch the bilevel metal. This step is illustrated in FIG.
4). A seed layer of cobalt nickel iron alloy is disposed. CoNiFe is chosen because of its high saturation flux of 2 Tesla and low coercivity. (Tetsuya et al., Osaka, Soft magnetic CoNiFe film with high saturation magnetic flux density, Nature 392, 796-798 (1998))
Apply 5.4 micron resist, expose with mask 2 and develop. This mask defines a split fixed magnetic plate, and the resist acts as an electroplating mold for the plate. This step is illustrated in FIG.

  6.3 micron CoNiFe is electroplated. This step is illustrated in FIG.

  7. Strip the resist and etch the exposed seed layer. This step is illustrated in FIG.

  8. Place 0.5 micron silicon nitride. Silicon nitride insulates the solenoid from the fixed magnetic plate.

9. The nitride layer is etched using the mask 3. In addition to returning the nozzle chamber to a hydrophilic state, this mask defines a contact bias from each end of the solenoid coil to the two halves of the two-part fixed magnetic plate. This step is illustrated in FIG.
10. In addition to the adhesive layer, a copper seed layer is disposed. Copper is used because of its low resistivity (resulting in high efficiency) and high electromigration resistance, which is reliable even at high current densities.
11. A 13-micron resist is applied and exposed using a mask 4. The mask defines a solenoid spiral coil and the resist acts as an electroplating mold. Since the resist is thick and the aspect ratio is high, an X-ray proximity process such as LIGA is used. This step is illustrated in FIG.

  12. Electroplate copper at 12 microns.

13. Strip the resist and etch the exposed copper seed layer. This step is illustrated in FIG.
14 Wafer testing. At this point, all electrical connections are complete. The bond pad is accessible and the chip is not yet isolated.
15. Place 0.1 micron silicon nitride. Silicon nitride acts as a corrosion barrier. (Not shown)
16. Place 0.1 micron PTFE (not shown). PTFE makes the upper surface of the fixed magnetic plate and the solenoid hydrophobic, thus preventing the space between the solenoid and the magnetic piston from filling up with ink (if water-based ink is used, these surfaces are usually Is made to have no affinity).
17. The PTFE layer is etched using the mask 5. This mask defines the hydrophilic portion of the nozzle chamber. This etching returns the nozzle chamber to a hydrophilic state.
18. Place sacrificial material of 1 micron. This defines the process of magnetic gap and magnetic piston.
19. The sacrificial layer is etched using the mask 6. This mask defines a spring post. This step is illustrated in FIG.

  20. A seed layer of CoNiFe is placed.

Place 21.12 micron resist. Even during the spin coating process of the resist, the resist is sprayed because the solenoid inhibits the flow of the resist. The resist is exposed using the mask 7. This mask defines a spring post in addition to the wall of the magnetic plunger. Since the resist is thick and the aspect ratio is high, an X-ray proximity process such as LIGA is used.
This step is defined in FIG.

  Electroplating 22.12 micron CoNiFe. This step is shown at 342.

  23. A seed layer of CoNiFe is placed.

  A 24.4 micron resist is applied, exposed using a mask 8, and developed. This mask defines the magnetic plunger roof, nozzle, spring, spring post. The resist forms the electroplating mold for these parts. This step is shown in FIG.

  Electroplate 25.3 micron CoNiFe. This step is shown in FIG.

  26. The resist and the sacrificial material are separated and the seed layer is exposed. This step is illustrated in FIG.

  27. Back etching through the silicon wafer is performed using the mask 9 until the cross of the nozzle chamber opening is reached. This etching may be performed using ASE Advanced Silicon Etcher from Surface Technology Systems. This etch defines an ink inlet that is etched through the wafer. Further, the wafer is cut into small pieces by this etching. This step is illustrated in FIG.

  28. Mount the printhead on the container. This container may be a plastic-formed molded member into which an ink groove for supplying ink of an appropriate color to the ink inlet on the back of the wafer is introduced.

  29. Connect the printhead to the relay device. TAB can be used for low profile connections that minimize air flow turbulence. Wire bonding can also be used if the printer is operated with sufficient clearance from the paper.

  30. Fill the completed printhead with ink and test. A nozzle filled with ink is shown in FIG.

IJ Applications The inkjet printing technology just announced is widely compatible with printing systems that include: color and monochrome office printers, single-use digital printers, high-speed digital printers, offset printing supplemental printers, low-cost scanning printer high-speed pages Width printer, notebook computer with built-in page width printer, portable color / monochrome printer, color / monochrome printer, color / monochrome facsimile, composite printer, facsimile / copier, label printer, large format plotter, photocopier, digital photo "Developer" printer, video printer, photo CD printer, PDA portable printer, wallpaper printer, indoor sign printer, billboard printer, fabric printer, camera Printer, fault tolerant commercial printer arrays.

Inkjet Technology Embodiments of the present invention use an inkjet printer type device. Of course, many different devices can be used. However, currently popular inkjet printing technology is unlikely to be suitable.

The most important problem with thermal inkjet is power consumption. Due to the poor energy efficiency of ink drop ejection, the power required for high speed is about 100 times. This is because rapid boiling of water is required to generate vapor bubbles for ejecting ink. Water has a very high heat capacity and is overheated in the use of thermal ink jets. This requires an efficiency of about 0.02% in order to convert electrical input into motion output.
The most important issues with piezo electric inkjet are size and cost. Piezoelectric crystals have very small deflection at the appropriate drive voltage, and therefore require a large area for each nozzle. Also, each piezoelectric actuator must be connected to a separate substrate drive circuit. This is not a significant problem in limiting the current of about 300 nozzles, but is a major obstacle to the manufacture of page width printheads with 19,200 nozzles.
Low power (less than 10 watts)
High resolution performance (1,600 dpi or higher)
Photo quality output Low manufacturing cost Small size (Adjust page width to minimize cross-cut width)
High speed (<2 seconds per page)
All of these features can be overcome with different levels of difficulty by the inkjet system described below. Forty-five different inkjet technologies have been developed by successors to give a wide choice for high volume manufacturing. These techniques form isolated applications designated by the applicant, as shown in the tables described below.

    The inkjet design shown here is suitable for a wide range of digital printing systems, from battery-powered single-use digital cameras to desktop network printers and commercial printing systems.

In order to be easily manufactured using standard equipment, the printhead is designed into a monolithic 0.5 micron CMOS chip by a MEMS post-processing method. For color photography applications, the printhead is 100 mm long and has a width that depends on the type of ink jet. Minimum printhead is IJ38, width is 0.35 mm, with a chip area of 35 mm ^2. The print head has 19,200 nozzles and data and control circuitry.

The ink is supplied to the back surface of the print head via an injection-molded plastic ink passage. The molding requires 50 micro features. The features can be formed using lithographically micromachined inserts in standard injection molding tools. Ink flows through a hole formed through the wafer to a nozzle chamber formed in the front of the wafer. The print head is connected to the camera circuit by TAB.
The following table is a cross-reference guide for patent applications. These applications are filed together with this and are discussed using the references used in the following table when referring to special cases.

Eleven important features relating to the basic operation of individual inkjet nozzles in drop-on-demand inkjet have been identified. These features are roughly orthogonal and can therefore be resolved as an 11-dimensional matrix. Most of the eleven axes of this matrix contain entries developed by the applicant.

The following table forms the axis of an ink jet type 11-dimensional table.
Actuator mechanism (18 types)
Basic operation mode (7 types)
Auxiliary actuator (8 types)
Actuator amplification and improvement method (17 types)
Actuator movement (19 types)
Nozzle replenishment method (4 types)
Method to limit backflow to the inlet (10 types)
Nozzle cleaning method (9 types)
Nozzle plate structure (9 types)
Drop ejection direction (5 types)
Ink type (7 types)
The complete 11-dimensional table displayed by these axes contains 36.9 billion possible forms for inkjet nozzles. Millions are viable, although not all of them are feasible in the various inkjet technologies. It is clearly impractical to describe all possible forms. Instead, several ink jet types have been examined in detail. These are the nominated IJ01 to IJ45 described above.

    Other ink jet forms can be readily derived from these 45 examples by replacing them with alternative forms along one or more of the 11 axes. Most of IJ01 through IJ45 can incorporate features that are superior to any currently available inkjet technology into inkjet printheads.

    Where there are prior art examples known to the inventor, one or more of these are shown in the example column of the table below. The series IJ01 to IJ45 is also shown in the example column. In some cases, if a printer shares more than one feature, it may appear more than once in a table.

    Suitable applications include: Home printers, office network printers, short-term digital printers, commercial printing systems, fabric printers, pocket printers, Internet www printers, video printers, medical images, large format printers, notebook computer printers, fax machines , Industrial printing systems, photocopiers, photo development stores, etc.

    Information associated with the 11-dimensional matrix described above is shown in the following table.

Actuator mechanism (applies only to selected ink drops)

Basic operation mode

Auxiliary mechanism

Actuator amplification or modification method

Actuator movement

Nozzle replenishment method

How to reduce backflow at the inlet

How to clean the nozzle

Nozzle plate structure

Drop ejection direction

Ink type

Inkjet printing New forms of numerous inkjet printers have been developed to promote alternative inkjet technology for image processing and data distribution systems. Various combinations of ink jet devices are possible for printer devices incorporating a portion of the present invention. Australian provisional patents relating to inkjet, specifically introduced by reference to each other, include:

Inkjet Manufacturing In addition, the current application can use advanced semiconductor manufacturing techniques to manufacture large arrays of inkjet printers. Suitable manufacturing techniques are described in the following Australian provisional patents. See below.

Liquid Replenishment Further, the present application can be used for an ink replenishment system for an inkjet head. A replenishment system for the supply of ink to a series of inkjet nozzles is described in the following Australian provisional patent. See below for disclosure.

MEMS Technology In addition, the present application can use advanced semiconductor microelectromechanical technology in the manufacture of large-scale arrays of inkjet printers. Suitable microelectromechanical techniques are described in the following Australian provisional patent application.

IR Technology In addition, the present application includes utilizing a disposable camera system. Refer to the Australian provisional patent application description below for these.

Dot Card Technology In addition, this application may include utilizing the data distribution system described in the following Australian provisional patent specifications.

Artcam Technology The present application may further include utilizing cameras and data processing techniques such as the Artcam type device described in the following Australian Provisional Patent Specification.

    It will be apparent to those skilled in the art that various modifications and variations can be made to the invention shown in the specific embodiments without departing from the scope and spirit of the invention as broadly described. This embodiment is therefore exceptional and should be considered in all respects as non-limiting.

It is a disassembled perspective view explaining the structure of the single inkjet nozzle by the Example of this invention. It is a timing diagram for demonstrating the effect | action of an Example. FIG. 2 is a cross-sectional plan view of a single ink nozzle configured in accordance with an embodiment of the present invention. It is a figure which shows description of the material shown by FIG. 5 thru | or FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a perspective sectional view of a single inkjet nozzle configured in accordance with an embodiment. FIG. FIG. 23 is a perspective sectional view of a partial enlargement (portion A in FIG. 22) of a single inkjet nozzle configured in accordance with an embodiment. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle according to an Example. It is a figure which shows description of the material shown by FIG. 26 thru | or FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a perspective view through a single inkjet nozzle constructed in accordance with an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of an ink nozzle configured in accordance with an embodiment of the present invention when the actuator is stationary. FIG. It is a schematic sectional drawing of an ink nozzle immediately after starting of an actuator. It is a schematic sectional drawing explaining the inkjet nozzle ready for starting. It is a schematic sectional drawing of an ink nozzle immediately after deactivation of an actuator. 1 is a partially exploded perspective view of a single inkjet nozzle actuator constructed in accordance with an embodiment of the present invention. FIG. FIG. 2 is an exploded perspective view for explaining a configuration of a single inkjet nozzle according to an embodiment of the present invention. It is a figure which shows description of the material shown by FIG. 45 thru | or FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle according to an Example. It is a partially exploded perspective view of a single inkjet nozzle configured according to an embodiment. FIG. 79 is a diagram showing a description of the material shown in FIGS. 62 to 78. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 2 is a cross-sectional view of a single inkjet nozzle in a stationary state configured in accordance with an embodiment. FIG. It is sectional drawing of the single inkjet nozzle comprised according to the Example, and has demonstrated the state which the actuator act | operated. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle by an Example. It is a figure which shows description of the material shown by FIG. 83 thru | or FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a perspective sectional view of a single inkjet nozzle configured in accordance with an embodiment. FIG. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle according to an Example. It is a figure which shows description of the material shown by FIG. 97 thru | or FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. FIG. 3 is a perspective view of a single inkjet nozzle constructed in accordance with an embodiment when the shutter means is in the closed position. FIG. 3 is a perspective view of a single inkjet nozzle configured according to an embodiment when the shutter means is in the open position. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle according to an Example. FIG. 138 is a diagram illustrating the material illustrated in FIGS. 116 to 137. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 2 is a partial cross-sectional, perspective view of a single inkjet nozzle in a stationary position constructed in accordance with the present invention. FIG. 2 is a partial cross-sectional, perspective view of a single inkjet nozzle in a start position constructed in accordance with the present invention. FIG. It is a disassembled perspective view for demonstrating the structure of the single inkjet nozzle according to an Example. FIG. 157 is a diagram illustrating the material illustrated in FIGS. 142 to 156. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 2 is a cross-sectional view of a single inkjet nozzle in a stationary state configured in accordance with an embodiment. FIG. FIG. 3 is a cross-sectional view of a single inkjet nozzle after reaching a stop position configured in accordance with an embodiment. FIG. 2 is a cross-sectional view of a single inkjet nozzle configured in accordance with an embodiment with a keeper in an opposing position. FIG. 3 is a cross-sectional view of a single inkjet nozzle after drive release from the keeper level configured in accordance with an embodiment. It is a disassembled perspective view explaining the structure of an Example. FIG. 6 is a top side view of a single inkjet nozzle being removed at the keeper level configured in accordance with an embodiment. FIG. 188 is a diagram illustrating the material illustrated in FIGS. 164 to 183. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is a partial cross section top view of the inkjet nozzle by an Example. It is a disassembled perspective view explaining the structure of the single inkjet nozzle by an Example. FIG. 207 is a diagram illustrating the material illustrated in FIGS. 187 to 207. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a partial cross-sectional plan perspective view of an inkjet nozzle according to an embodiment of the present invention. It is a disassembled perspective view explaining the shutter mechanism by the Example of this invention. It is a cross-sectional perspective view of the ink nozzle comprised according to the Example of this invention. 227 is a diagram illustrating the material illustrated in FIGS. 212 to 226. FIG. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 2 is a perspective cross-sectional view of a single inkjet nozzle configured in accordance with an embodiment. FIG. It is a disassembled perspective view explaining the structure of the single inkjet nozzle by an Example. FIG. 253 is a diagram illustrating the material shown in FIGS. 230 to 248. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a perspective view of a single inkjet nozzle in a closed position configured in accordance with an embodiment. FIG. FIG. 2 is a perspective view of a single inkjet nozzle in an open position configured in accordance with an embodiment. FIG. 250 is a perspective view of a cross-section along line II of FIG. 250 of a single inkjet nozzle according to an embodiment. It is a disassembled perspective view explaining the structure of the single inkjet nozzle by an Example. FIG. 276 is a diagram illustrating the material illustrated in FIGS. 254 to 275. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. It is sectional drawing explaining the manufacturing process of 1 structure of an inkjet print head nozzle. 1 is a schematic top view of a single inkjet nozzle chamber apparatus configured in accordance with an embodiment. FIG. FIG. 2 is a cross-sectional view of a single inkjet nozzle chamber device having a partition in a driven state. FIG. 278 is a schematic cross-sectional view showing the exposure of the resist layer through the halftone mask. FIG. 279 is a schematic cross-sectional view showing a resist layer after development showing a waveform pattern. FIG. 280 is a schematic cross-sectional view showing a state where a waveform pattern is transferred onto a substrate by etching. FIG. 281 is a schematic cross-sectional view showing the construction of an embedded corrugated conductive layer. FIG. 282 is an exploded perspective view showing the construction of a single inkjet nozzle according to an embodiment. FIG. 283 is a perspective view showing a heater arrangement used for a single inkjet nozzle constructed according to an embodiment. FIG. 284 is an explanatory diagram of the material shown in FIGS. 285 to 296. FIG. 285 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 286 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 287 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 288 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 289 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 290 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 291 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 292 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 293 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 294 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 295 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 296 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 297 is a perspective sectional view showing a single inkjet nozzle constructed according to the embodiment. FIG. 298 is an exploded perspective view showing the construction of a single inkjet nozzle according to an embodiment. FIG. 299 is an explanatory diagram of the material shown in FIGS. 300 to 311. FIG. 300 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 301 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 302 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 303 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 304 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 305 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 306 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 307 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 308 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 309 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 310 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 311 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 312 is an exploded perspective view of a single inkjet nozzle constructed according to an embodiment. FIG. 313 is a perspective cross-sectional view of a single inkjet nozzle in a resting state along line AA in FIG. 312. FIG. 314 is a perspective cross-sectional view of a single inkjet nozzle in a driven state along line AA in FIG. 312. FIG. 315 is an explanatory diagram of the material shown in FIGS. 316 to 326. FIG. 316 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 317 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 318 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 319 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 320 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 321 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 322 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 323 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 324 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 325 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 326 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 327 is a schematic diagram illustrating an operation state of the inkjet nozzle device of the embodiment. FIG. 328 is a schematic diagram illustrating an operation state of the inkjet nozzle device of the embodiment. FIG. 329 is a schematic diagram illustrating an operation state of the inkjet nozzle device of the embodiment. FIG. 330 is a partial cross-sectional perspective side view of the single inkjet nozzle device of the embodiment. FIG. 331 is an explanatory diagram of the material shown in FIGS. 332 to 347. FIG. 332 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 333 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 334 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 335 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 336 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 337 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 338 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 339 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 340 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 341 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 342 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 343 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 344 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 345 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 346 is a cross-sectional view illustrating manufacturing steps in one form of construction of an inkjet printhead nozzle. FIG. 347 is a cross-sectional view showing manufacturing steps in one form of construction of an inkjet printhead nozzle.

Claims (8)

A communication has been the nozzle chamber to the ink chamber, the magnet piston, and the drive coil,
The nozzle chamber stores ink for printing, and has a nozzle chamber discharge hole for discharging the ink,
The magnet piston is disposed in the nozzle chamber and above the discharge hole ,
The drive coil is disposed adjacent to the magnet piston, and as a result, when driven by a first current, from the first position, which is a position closer to the discharge hole, from the discharge hole than the first position . sufficiently move force of the magnet piston to a second position which is away acts on the piston, when the first current is driven by a second current of opposite direction, said first position from said second position the acts on the magnet piston forces the piston to fully move into, the said from the first position to the second position, and movement to the first position from the second position, the ink in the nozzle chamber, said An ink jet print nozzle device, wherein the ink is discharged from a nozzle chamber onto a print medium through a discharge hole.     2. An ink jet according to claim 1, further comprising a series of elastic means attached to said magnet piston for returning said magnet piston to said first position by deactivating the drive coil. Printing nozzle device.     The ink jet printing nozzle apparatus according to claim 2, wherein the elastic means comprises at least one torsion spring.     The inkjet printing nozzle apparatus according to claim 1, wherein the apparatus is constructed using semiconductor manufacturing technology.     2. The ink jet printing nozzle apparatus according to claim 1, wherein the nozzle chamber discharge hole has a nozzle rim so as to suppress the spread of ink on the hydrophilic surface.     2. The ink jet printing nozzle apparatus according to claim 1, wherein the drive coil is constructed from a copper arranging step.     The ink jet printing nozzle device according to claim 1, wherein the magnet piston is constructed from a rare earth magnet material.     The inkjet printing nozzle apparatus according to claim 2, wherein the elastic means is made of silicon nitride.

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