JP4156431B2 - 発光装置およびその作製方法 - Google Patents

発光装置およびその作製方法 Download PDF

Info

Publication number
JP4156431B2
JP4156431B2 JP2003118329A JP2003118329A JP4156431B2 JP 4156431 B2 JP4156431 B2 JP 4156431B2 JP 2003118329 A JP2003118329 A JP 2003118329A JP 2003118329 A JP2003118329 A JP 2003118329A JP 4156431 B2 JP4156431 B2 JP 4156431B2
Authority
JP
Japan
Prior art keywords
electrode
light
emitting device
film
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003118329A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004006327A (ja
JP2004006327A5 (enExample
Inventor
舜平 山崎
哲史 瀬尾
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003118329A priority Critical patent/JP4156431B2/ja
Publication of JP2004006327A publication Critical patent/JP2004006327A/ja
Publication of JP2004006327A5 publication Critical patent/JP2004006327A5/ja
Application granted granted Critical
Publication of JP4156431B2 publication Critical patent/JP4156431B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80518Reflective anodes, e.g. ITO combined with thick metallic layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2003118329A 2002-04-23 2003-04-23 発光装置およびその作製方法 Expired - Fee Related JP4156431B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003118329A JP4156431B2 (ja) 2002-04-23 2003-04-23 発光装置およびその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002121522 2002-04-23
JP2003118329A JP4156431B2 (ja) 2002-04-23 2003-04-23 発光装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2004006327A JP2004006327A (ja) 2004-01-08
JP2004006327A5 JP2004006327A5 (enExample) 2005-09-22
JP4156431B2 true JP4156431B2 (ja) 2008-09-24

Family

ID=30447346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003118329A Expired - Fee Related JP4156431B2 (ja) 2002-04-23 2003-04-23 発光装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP4156431B2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979395B2 (ja) * 2004-02-24 2007-09-19 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置用基板、及び電子機器
JP2006086085A (ja) * 2004-09-17 2006-03-30 Semiconductor Energy Lab Co Ltd 発光装置
US8350466B2 (en) * 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
US8149346B2 (en) 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4539679B2 (ja) * 2007-05-09 2010-09-08 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
JP2009151955A (ja) * 2007-12-18 2009-07-09 Sony Corp 面発光光源およびその製造方法
US7977678B2 (en) * 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP5151576B2 (ja) * 2008-03-14 2013-02-27 ソニー株式会社 有機発光素子の製造方法および有機発光表示装置、並びに自発光素子の製造方法および自発光表示装置
JP5553518B2 (ja) * 2009-03-19 2014-07-16 エルジー ディスプレイ カンパニー リミテッド 画像表示装置
KR101084171B1 (ko) * 2009-08-10 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 유기 발광 디스플레이 장치의 제조 방법
JP5737550B2 (ja) * 2009-12-03 2015-06-17 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
KR101692409B1 (ko) * 2010-03-29 2017-01-04 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101777246B1 (ko) 2010-08-30 2017-09-12 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
WO2012108482A1 (en) * 2011-02-11 2012-08-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US8957442B2 (en) * 2011-02-11 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP6209318B2 (ja) * 2012-06-06 2017-10-04 ローム株式会社 有機el発光装置およびその製造方法
KR20220080923A (ko) * 2020-12-08 2022-06-15 엘지디스플레이 주식회사 전계 발광 표시장치
US20240055551A1 (en) * 2021-04-14 2024-02-15 Sharp Display Technology Corporation Light-emitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289784A (ja) * 1997-04-14 1998-10-27 Mitsubishi Chem Corp 有機電界発光素子
JP2000077181A (ja) * 1998-09-01 2000-03-14 Denso Corp El素子
JP2001043980A (ja) * 1999-07-29 2001-02-16 Sony Corp 有機エレクトロルミネッセンス素子及び表示装置
US6869635B2 (en) * 2000-02-25 2005-03-22 Seiko Epson Corporation Organic electroluminescence device and manufacturing method therefor
JP3991605B2 (ja) * 2000-03-13 2007-10-17 セイコーエプソン株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2001351787A (ja) * 2000-06-07 2001-12-21 Sharp Corp 有機led素子とその製造方法および有機ledディスプレイ
JP2002198182A (ja) * 2000-12-25 2002-07-12 Sony Corp 有機el素子
JP2003017273A (ja) * 2001-07-05 2003-01-17 Sony Corp 表示装置および表示装置の製造方法

Also Published As

Publication number Publication date
JP2004006327A (ja) 2004-01-08

Similar Documents

Publication Publication Date Title
US9978811B2 (en) Light emitting device and method of manufacturing the same
US9853098B2 (en) Light emitting device and manufacturing method of the same
US8309976B2 (en) Light emitting device and manufacturing method thereof
JP4156431B2 (ja) 発光装置およびその作製方法
JP4401688B2 (ja) 発光装置およびその作製方法、並びに電子機器
JP4373086B2 (ja) 発光装置
US10454059B2 (en) Semiconductor device and method of manufacturing same
JP4216008B2 (ja) 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末
JP4683825B2 (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050411

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080609

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080708

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080709

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110718

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4156431

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110718

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110718

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120718

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120718

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120718

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130718

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees