JP4141307B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4141307B2
JP4141307B2 JP2003101232A JP2003101232A JP4141307B2 JP 4141307 B2 JP4141307 B2 JP 4141307B2 JP 2003101232 A JP2003101232 A JP 2003101232A JP 2003101232 A JP2003101232 A JP 2003101232A JP 4141307 B2 JP4141307 B2 JP 4141307B2
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Japan
Prior art keywords
insulating film
film
region
semiconductor
semiconductor region
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Expired - Fee Related
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JP2003101232A
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English (en)
Japanese (ja)
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JP2004006786A5 (enExample
JP2004006786A (ja
Inventor
舜平 山崎
清 加藤
敦生 磯部
秀和 宮入
英臣 須沢
豊 塩野入
博之 三宅
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003101232A priority Critical patent/JP4141307B2/ja
Publication of JP2004006786A publication Critical patent/JP2004006786A/ja
Publication of JP2004006786A5 publication Critical patent/JP2004006786A5/ja
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Publication of JP4141307B2 publication Critical patent/JP4141307B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003101232A 2002-03-15 2003-04-04 半導体装置の作製方法 Expired - Fee Related JP4141307B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003101232A JP4141307B2 (ja) 2002-03-15 2003-04-04 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002071664 2002-03-15
JP2002080391 2002-03-22
JP2003101232A JP4141307B2 (ja) 2002-03-15 2003-04-04 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003072180A Division JP4141292B2 (ja) 2002-03-15 2003-03-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2004006786A JP2004006786A (ja) 2004-01-08
JP2004006786A5 JP2004006786A5 (enExample) 2006-04-20
JP4141307B2 true JP4141307B2 (ja) 2008-08-27

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ID=30449131

Family Applications (1)

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JP2003101232A Expired - Fee Related JP4141307B2 (ja) 2002-03-15 2003-04-04 半導体装置の作製方法

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JP (1) JP4141307B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115947B2 (en) * 2004-03-18 2006-10-03 International Business Machines Corporation Multiple dielectric finfet structure and method
JP2021197474A (ja) * 2020-06-16 2021-12-27 株式会社村田製作所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856457A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体装置の製造方法
JPS61241909A (ja) * 1985-04-19 1986-10-28 Agency Of Ind Science & Technol Ｓｏｉ結晶形成法
JPH06244207A (ja) * 1991-03-25 1994-09-02 Fuji Xerox Co Ltd 半導体装置
JPH0828815A (ja) * 1994-07-19 1996-02-02 Ishikawajima Harima Heavy Ind Co Ltd 流動層ボイラの散気装置
JP3754189B2 (ja) * 1997-08-26 2006-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11121753A (ja) * 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP4776773B2 (ja) * 1999-12-10 2011-09-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP2004006786A (ja) 2004-01-08

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