JP4134016B2 - 単一集積された半導体光素子 - Google Patents
単一集積された半導体光素子 Download PDFInfo
- Publication number
- JP4134016B2 JP4134016B2 JP2004358087A JP2004358087A JP4134016B2 JP 4134016 B2 JP4134016 B2 JP 4134016B2 JP 2004358087 A JP2004358087 A JP 2004358087A JP 2004358087 A JP2004358087 A JP 2004358087A JP 4134016 B2 JP4134016 B2 JP 4134016B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- light
- substrate
- semiconductor optical
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 230000003287 optical effect Effects 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005253 cladding Methods 0.000 claims description 5
- 230000002159 abnormal effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Description
以上。
310 基板
311 下部クラッド
312 上部クラッド
320 第1の導波路
321 第1の活性層
330 第2の導波路
331 第2の活性層
340 半絶縁層
340a ウィンドウ領域
Claims (3)
- 基板と、
光を生成するための第1の活性層を含み、前記基板上に形成された第1の導波路と、
前記第1の導波路から出力された光を拡散させて出力するためのウィンドウ領域を有し、前記基板上に前記第1の導波路の周囲を囲むように成長された半絶縁層と、
前記ウィンドウ領域で拡散された光の一部を検出するための第2の活性層を有する2つ以上の第2の導波路とを含み、
前記2つ以上の第2の導波路は、前記ウィンドウ領域内に形成され、
前記各々の第1及び第2の導波路は、前記基板と前記第1及び第2の活性層との間に形成された下部クラッドと、前記第1及び第2の活性層上に形成された上部クラッドとをさらに含み、
前記2つ以上の第2の導波路は、前記ウィンドウ領域を進行する光の進行経路を中心として左右対称となるように位置されること
を特徴とする半導体光素子。 - 前記半導体光素子は、単一体に集積されることを特徴とする請求項1記載の半導体光素子。
- 前記半絶縁層は、前記基板からの高さが前記第1及び第2の導波路の高さと略同一になるように、前記基板上に形成され、
前記第1及び第2の導波路の各々を進行する光の異常反射及び回折による損失を防止するために形成されること
を特徴とする請求項1記載の半導体光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030091226A KR100566216B1 (ko) | 2003-12-15 | 2003-12-15 | 단일 집적된 반도체 광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005183956A JP2005183956A (ja) | 2005-07-07 |
JP4134016B2 true JP4134016B2 (ja) | 2008-08-13 |
Family
ID=34651451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004358087A Expired - Fee Related JP4134016B2 (ja) | 2003-12-15 | 2004-12-10 | 単一集積された半導体光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7127134B2 (ja) |
JP (1) | JP4134016B2 (ja) |
KR (1) | KR100566216B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5185537B2 (ja) * | 2007-01-19 | 2013-04-17 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP6257544B2 (ja) * | 2015-02-27 | 2018-01-10 | 三菱電機株式会社 | 半導体レーザー |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2731856B1 (fr) * | 1995-03-16 | 1997-04-30 | Alcatel Nv | Dispositif photonique duplexeur |
-
2003
- 2003-12-15 KR KR1020030091226A patent/KR100566216B1/ko not_active IP Right Cessation
-
2004
- 2004-06-09 US US10/864,058 patent/US7127134B2/en not_active Expired - Fee Related
- 2004-12-10 JP JP2004358087A patent/JP4134016B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050129368A1 (en) | 2005-06-16 |
KR100566216B1 (ko) | 2006-03-29 |
US7127134B2 (en) | 2006-10-24 |
JP2005183956A (ja) | 2005-07-07 |
KR20050060142A (ko) | 2005-06-22 |
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