JP4098621B2 - 基板を処理する装置及び方法 - Google Patents

基板を処理する装置及び方法 Download PDF

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Publication number
JP4098621B2
JP4098621B2 JP2002538471A JP2002538471A JP4098621B2 JP 4098621 B2 JP4098621 B2 JP 4098621B2 JP 2002538471 A JP2002538471 A JP 2002538471A JP 2002538471 A JP2002538471 A JP 2002538471A JP 4098621 B2 JP4098621 B2 JP 4098621B2
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Japan
Prior art keywords
radiation
substrate
signal
processing
feature
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Expired - Lifetime
Application number
JP2002538471A
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English (en)
Japanese (ja)
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JP2004518272A (ja
Inventor
ジフェン スイ
ホンキン シャン
ニルズ ジョハンソン
ハーミート ノーバクシュ
ユ グアン
コリオラン フラム
ジー ユアン
チャン リン シエ
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US09/695,577 external-priority patent/US6831742B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2004518272A publication Critical patent/JP2004518272A/ja
Application granted granted Critical
Publication of JP4098621B2 publication Critical patent/JP4098621B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2002538471A 2000-10-23 2001-10-23 基板を処理する装置及び方法 Expired - Lifetime JP4098621B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/695,577 US6831742B1 (en) 2000-10-23 2000-10-23 Monitoring substrate processing using reflected radiation
US09/803,080 US6559942B2 (en) 2000-10-23 2001-03-08 Monitoring substrate processing with optical emission and polarized reflected radiation
PCT/US2001/049437 WO2002035586A2 (fr) 2000-10-23 2001-10-23 Surveillance du traitement de substrats par le rayonnement reflechi

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007159821A Division JP2007294987A (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法
JP2007159820A Division JP4841507B2 (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法

Publications (2)

Publication Number Publication Date
JP2004518272A JP2004518272A (ja) 2004-06-17
JP4098621B2 true JP4098621B2 (ja) 2008-06-11

Family

ID=27105602

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2002538471A Expired - Lifetime JP4098621B2 (ja) 2000-10-23 2001-10-23 基板を処理する装置及び方法
JP2007159820A Expired - Fee Related JP4841507B2 (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法
JP2007159821A Pending JP2007294987A (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2007159820A Expired - Fee Related JP4841507B2 (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法
JP2007159821A Pending JP2007294987A (ja) 2000-10-23 2007-06-18 基板を処理する装置及び方法

Country Status (5)

Country Link
EP (1) EP1352415A2 (fr)
JP (3) JP4098621B2 (fr)
CN (1) CN100459027C (fr)
TW (1) TW510008B (fr)
WO (1) WO2002035586A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7306696B2 (en) 2002-11-01 2007-12-11 Applied Materials, Inc. Interferometric endpoint determination in a substrate etching process
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
JP4400406B2 (ja) 2004-10-08 2010-01-20 エルピーダメモリ株式会社 半導体装置の製造方法
FR2887072A1 (fr) * 2005-06-08 2006-12-15 Alcatel Sa Systeme spectographique ameliore avec source plasma
JP5149610B2 (ja) * 2007-12-19 2013-02-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8135560B2 (en) * 2009-01-30 2012-03-13 Applied Materials, Inc. Sensor system for semiconductor manufacturing apparatus
JP5559505B2 (ja) * 2009-09-30 2014-07-23 東京エレクトロン株式会社 プラズマ処理装置
JP5385875B2 (ja) 2010-08-26 2014-01-08 東京エレクトロン株式会社 プラズマ処理装置及び光学モニタ装置
DE102014115708A1 (de) * 2014-10-29 2016-05-04 Aixtron Se Verfahren zum Trennen einer Kohlenstoffstruktur von einer Keimstruktur
KR102445181B1 (ko) 2019-02-01 2022-09-20 주식회사 히타치하이테크 에칭 방법 및 플라스마 처리 장치
JP6935598B1 (ja) * 2019-12-20 2021-09-15 株式会社日立ハイテク プラズマ処理装置およびウエハ処理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927485A (en) * 1988-07-28 1990-05-22 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
EP0662241A1 (fr) * 1993-04-28 1995-07-12 Applied Materials, Inc. Procede et appareil de detection du point final d'une gravure en retrait
EP0756318A1 (fr) * 1995-07-24 1997-01-29 International Business Machines Corporation Méthode de contrÔle en temps réel in-situ d'un procédé de formation d'une tranchée
JPH0997783A (ja) * 1995-09-28 1997-04-08 Nec Corp プラズマ処理装置
JPH09126991A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 分光検出方法及びその装置並びにこれらを用いた超微細加工方法及び超微細加工装置
JPH10239028A (ja) * 1997-02-27 1998-09-11 Toshiba Corp エッチング深さ測定方法及びその装置
JPH10294305A (ja) * 1997-04-18 1998-11-04 Hitachi Ltd 半導体製造方法及び装置
JPH1167732A (ja) * 1997-08-22 1999-03-09 Matsushita Electron Corp プラズマプロセスのモニタリング方法およびモニタリング装置
US6060328A (en) * 1997-09-05 2000-05-09 Advanced Micro Devices, Inc. Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP2000012527A (ja) * 1998-06-25 2000-01-14 Sumitomo Metal Ind Ltd エッチング終点判定方法及びエッチング終点判定装置
WO2000003232A1 (fr) * 1998-07-11 2000-01-20 Vorgem Limited Dispositif de surveillance de processus ameliore
KR100275671B1 (ko) * 1998-08-26 2001-02-01 윤종용 플라즈마 식각 설비
JP3383236B2 (ja) * 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
US6052176A (en) * 1999-03-31 2000-04-18 Lam Research Corporation Processing chamber with optical window cleaned using process gas

Also Published As

Publication number Publication date
EP1352415A2 (fr) 2003-10-15
JP2007294987A (ja) 2007-11-08
CN1636261A (zh) 2005-07-06
CN100459027C (zh) 2009-02-04
WO2002035586A3 (fr) 2003-08-07
TW510008B (en) 2002-11-11
WO2002035586A2 (fr) 2002-05-02
JP4841507B2 (ja) 2011-12-21
JP2004518272A (ja) 2004-06-17
JP2007329485A (ja) 2007-12-20

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