JP4097281B2 - 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法 - Google Patents

非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法 Download PDF

Info

Publication number
JP4097281B2
JP4097281B2 JP2006105177A JP2006105177A JP4097281B2 JP 4097281 B2 JP4097281 B2 JP 4097281B2 JP 2006105177 A JP2006105177 A JP 2006105177A JP 2006105177 A JP2006105177 A JP 2006105177A JP 4097281 B2 JP4097281 B2 JP 4097281B2
Authority
JP
Japan
Prior art keywords
chip
wound coil
contact
coil
identification device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006105177A
Other languages
English (en)
Other versions
JP2007280015A5 (ja
JP2007280015A (ja
Inventor
勝治 星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Star Engineering Co Ltd
Original Assignee
Star Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38581078&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4097281(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Star Engineering Co Ltd filed Critical Star Engineering Co Ltd
Priority to JP2006105177A priority Critical patent/JP4097281B2/ja
Priority to US12/225,293 priority patent/US20100230161A1/en
Priority to PCT/JP2007/056554 priority patent/WO2007116782A1/ja
Publication of JP2007280015A publication Critical patent/JP2007280015A/ja
Publication of JP2007280015A5 publication Critical patent/JP2007280015A5/ja
Application granted granted Critical
Publication of JP4097281B2 publication Critical patent/JP4097281B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05082Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05157Cobalt [Co] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166Titanium [Ti] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05184Tungsten [W] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/4569Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48455Details of wedge bonds
    • H01L2224/48456Shape
    • H01L2224/48458Shape of the interface with the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/7828Resistance welding electrodes, i.e. for ohmic heating
    • H01L2224/78282Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/8521Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85238Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00015Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012044N purity grades, i.e. 99.99%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19042Component type being an inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Credit Cards Or The Like (AREA)

Description

本発明は、多くのサービス産業、物品販売業、製造業、物流業及び金融業等の種々の分野で、物品や人物に関する個体の自動認識の手段として用いられる非接触ID識別装置用の巻線型コイルとICチップの接続端子とを接続する非接触ID識別装置用の巻線型コイルとICチップとの接続構造、並びにこれを構成するための非接触ID識別装置用の巻線型コイルとICチップとの接続方法に関するものである。
近年、個体の自動認識(自動ID識別)は、多くのサービス産業、物品販売業、流通業、製造業及び物流等の種々の産業分野で、取り扱う種々の物品やサービス、或いは関係する人物等の識別のために一般的に利用されるようになってきている。このような個体の自動認識の手段としてバーコード・ラベルが広く用いられてきたが、現在では、圧倒的に記憶容量が大きく、かつ再度プログラムが可能なICカードが有力視され、これに移行しつつある。
前記ICカードには、接触型と非接触型のそれがあるが、後者の非接触型のそれが、データキャリヤ装置への電力供給及びカード・リーダとデータキャリヤ装置との間のデータ交換に物理的接触を必要としないため、接触面の腐食の問題や汚れの問題が完全に回避可能となり極めて高い実用性が認められる。
前記非接触ICカードに於いて、そのキャリヤ装置のアンテナコイルと対応するカード・リーダのアンテナとの最適電磁誘導結合を確保し、これによって確実な情報交換(電力供給)を行うためには、そのアンテナコイルの電気抵抗をできるだけ小さくすることが望まれる。そしてこのような観点からは、アンテナコイルの材料として、電気抵抗の大小の順に従って、銀、銅、金、アルミニウムがその順で相応しいことになるが、使用環境下での安定性及び経済的観点から銅が最も実用的なものとして選択されるべきものと考える。
このようなアンテナコイルの製法には、銅電線を巻線する方法(特許文献1、2、3)、銅箔をエッチングして形成する方法、導電性ポリマー・インクを用いた印刷による方法等がある。これらの内、銅箔エッチングによる方法は、フォトリソグラフィー技術を用いるものであるため量産性に富み、かつ低い電気抵抗のコイルが得られるが、その電気抵抗のばらつきが大きく、加えて製造工程で生じる廃水の処理の問題もある。また前記導電性ポリマー・インクを用いた印刷による方法も、エッチングによる方法と同様に、量産性には富むが、銀粉を用いるものは環境安定性に乏しく、金粉や金繊維を用いるものは経済的に競争力が乏しい上に、得られるコイルの電気抵抗が大きく実用性に乏しい。前記銅電線を用いて巻線する方法は、他の二者ほどの量産性はないが、得られるコイルの電気抵抗のばらつきが小さく、本発明者は、現時点では、安定して高性能の非接触ICカードを提供する上で、最も優れたアンテナコイルの製造方法であると考えている。
他方、ICチップの接続端子は、複数の金属を積層させたメタライゼーションによって構成されており、最下層から順に、チタン、タングステン及び金を積層させたTi−W−Auによる接続端子、Cr−Ni−Agによる接続端子、Cr−Ni−Auによる接続端子等を備えたICチップが供給されている。それぞれAuやAgの最外層の金属の性質を考慮してコイルとの接続方法を選択すべきであるが、本発明者は、保管中の劣化の少ない最外層がAuであるメタライゼーションを備えた接続端子を採用することが好ましいと考えている。
前記のような銅電線を巻線する方法で製造された非接触ICカード用巻線型コイルとICチップの以上のような接続端子との接続方法には間接法と直接法とが知られている。この場合の間接法とは接続端子とコイルとの間に中間橋部材(インタポーザ)を介して接続する方法であり、直接法は、コイルと接続端子とを半田付けや導電性接着剤によって接続する方法である。
上記直接法の接続方法の内、半田付けによる接続方法には、レーザ(特許文献4)や抵抗溶接電源を用いたそれが知られているが、接続端子がAu最外層のメタライゼーションを備えたものである場合には、半田とAuとの合金化による接合部の脆化の問題がある上に、半田の融点によって使用温度域が制限される。また前記熱圧着による接続方法には、コイルを構成する銅電線先端部にボールを安定して形成する技術が未完成であり、接合部の信頼性に不安がある。更にアルミニウム電線によく用いられる超音波溶接による接続方法には、コイルを構成する銅電線のアルミニウム電線に比べて大きな剛性によってチップ及び接続端子に損傷を与える虞があるという問題がある。
また前記間接法には、接続端子とコイルを構成する銅電線との間に別工程で製造される中間橋部材を用いることによるコストの上昇及び切断作業や接続個所の増加等の作業工数の増加の問題がある。更に中間橋部材は量産性が特に要求されるため、アンテナコイルの製造について述べた印刷法又はエッチング法を用いざるを得ず、既述のそれぞれに特有の欠点を有しており、使用条件が著しく制限される。
特開2005−184427号公報 特開2003−303731号公報 特開2002−352203号公報 特開2001−047221号公報
本発明は、以上の観点から、非接触ID識別装置用アンテナコイルとして、銅電線を巻線する方法で作成されたコイル抵抗のばらつきの少ない巻線型コイルを採用し、更にICチップの接続端子として保管中の劣化の少ない最外層がAuであるメタライゼーションを備えたそれを用い、コストの低い直接法による相互の接続を選択し、かつこれを改良して電気的及び機械的に良好な接続を確保することのできる非接触ID識別装置用巻線型コイルとICチップとの接続構造、並びにこれを容易かつ確実に作製することのできる非接触ID識別装置用巻線型コイルとICチップとの接続方法を提供することを解決の課題とする。
本発明の1は、銅(Cu)製の巻線型コイルとICチップの最外層が金(Au)で構成された接続端子とを、両者の界面付近に加熱加圧によって形成したAu/Cu全率固溶体を介して、接合した非接触ID識別装置用の巻線型コイルとICチップとの接続構造である。
本発明の2は、銅(Cu)製の巻線型コイルをICチップの最外層が金(Au)で構成された接続端子に、前者を後者上に載せ、かつ前者の上から加熱しながら加圧し、両者の界面付近にAu/Cu全率固溶体を形成させることにより、直接接合して、請求項1の非接触ID識別装置用の巻線型コイルとICチップとの接続構造を構成することとした、非接触ID識別装置用の巻線型コイルとICチップとの接続方法である。
本発明の3は、本発明の2の非接触ID識別装置用の巻線型コイルとICチップとの接続方法に於いて、前記加熱しながら加圧する操作を傍熱型抵抗溶接によって行うこととしたものである。
本発明の4は、本発明の2又は3の非接触ID識別装置用の巻線型コイルとICチップとの接続方法に於いて、前記加熱しながら加圧する操作に於ける加熱温度及び加圧力を、それぞれ、前記巻線型コイルと前記ICチップの接続端子との相互の界面付近にAu/Cu全率固溶体を形成させ得るように実験的に決定することとしたものである。
本発明の5は、本発明の2又は3の非接触ID識別装置用の巻線型コイルとICチップとの接続方法に於いて、前記加圧を、塑性変形後の巻線型コイルの該当部位の厚さtと変形前の線径Dとの比率t/Dが、0.1を越え、かつ0.8以下となるように設定したものである。
本発明の1の非接触ID識別装置用の巻線型コイルとICチップとの接続構造によれば、巻線型コイルとICチップの接続端子とを、前者と後者の最外層のAu膜との界面付近に形成したAu/Cu全率固溶体を介して接続するものであるため、その高い機械的強度の接続を確保し、かつ良好な電気的接続を確保することができる。先に述べた半田付けその他を用いた接合の場合の諸問題の発生の余地がないのは云うまでもない。
本発明の2の非接触ID識別装置用の巻線型コイルとICチップとの接続方法によれば、巻線型コイルとICチップの接続端子の最外層のAu膜との界面付近に容易かつ確実にAu/Cu全率固溶体を形成することが可能であり、これによって低コストで良好に本発明の1の非接触ICカード用巻線型コイルとICチップとの接続構造を作製することができる。
本発明の3の非接触ID識別装置用の巻線型コイルとICチップとの接続方法によれば、加熱しながら加圧する操作を傍熱型抵抗溶接によって行うこととしたため、電極を高抵抗で耐熱性の良い金属で適切に構成することにより、実用レベルの電流を流すことで、所望の高温度を容易に発生し得、ICチップの接続端子上に配した巻線型コイルに必要な熱量及び加圧力を容易に加えることができる。
本発明の4の非接触ID識別装置用の巻線型コイルとICチップとの接続方法によれば、ICチップの接続端子上に配した巻線型コイルに加える温度及び加圧力を容易かつ適切に設定することができる。
本発明の5の非接触ID識別装置用の巻線型コイルとICチップとの接続方法によれば、ICチップの接続端子と巻線型コイルとの安定した接合強度が得られる。
本発明は、図3及び図4に示すように、銅製の巻線型コイル1とICチップ2の最外層がAu膜(金膜)3aで構成された接続端子3とを、両者の界面付近に加熱加圧によって形成したAu/Cu全率固溶体の合金層5を介して、接合した非接触ID識別装置用の巻線型コイルとICチップとの接続構造、並びに、図1に示すように、銅製の巻線型コイル1をICチップ2の最外層がAu膜3aで構成された接続端子3に直接接合して該接属構造を作製する非接触ID識別装置用の巻線型コイルとICチップとの接続方法である。
なお、該接続方法に於ける接続は、図1に示すように、巻線型コイル1を接続端子3上に載せた上で、前者の上から加熱しながら加圧する操作で行うものであり、これによって両者の界面付近にAu/Cu全率固溶体の合金層5を形成させることにより、前記接続構造を作製し、巻線型コイル1と接続端子3との確実な接続を確保するものである。
前記非接触ID識別装置は、マイクロプロセッサを含むICチップを内蔵するカード型又はタグ型ID識別装置であって、該ICチップと外部のカードリーダとの間の電力の授受及び情報の交換を前記巻線型コイルを介して行う装置を云うものとする。
前記巻線型コイル1は、先に述べたように、銅製の電線で作製するものであるが、この銅製電線は、通常、銅芯線1bを絶縁膜1aで被覆したものであり、それ故、該銅製電線は、その銅芯線1bが、云うまでもなく、実質的に銅製である電線を称するものとする。従って、意図の有無を問わず導電率が純銅のそれの±10%以内となる少量の不純物を含む銅芯線1bを備えた銅製電線も当然この範疇に属する。なお前記絶縁膜1aは、種々の熱可塑性樹脂によって構成されている。
前記ICチップ2の接続端子3は、前記したように、その最外層がAu膜3aで構成されている必要があるが、中間層3b及び最下層3cの金属の種類は限定されない。この技術分野でよく知られているように、概ね、最下層3cはチップ2とのオーミック接合を確保する趣旨で、中間層3bはAu膜3aと最下層3cとの相互拡散を阻止する趣旨で素材が選択される。この種の接続端子3を構成するメタライゼーションは、前記したように、最下層からTi−W−Auの順で、Cr−Ni−Agの順で、或いはCr−Ni−Auの順で、それぞれ積層被覆したもの等が供給されているが、これらの内では、Ti−W−Auの順で積層被覆したもの又はCr−Ni−Auの順で積層被覆したものが採用可能である。
なお最外層の金(Au)は、通常、カラット法で云う24金が採用されるが、その純度は99.99%以上である。もっともここで云う金は、このような純度のものに限定されるわけではなく、実質的に金と称することができる純度のそれの全てを指すものである。
前記加熱しながら加圧する操作は、前記巻線型コイル1の所定部位を接続端子3上に載せた上で、図1に示すように、前者の上から行うものであり、これによって、図3及び図4に示すように、両者の界面付近にAu/Cu全率固溶体の合金層5を形成させることができる手段を自由に採用することができる。
例えば、この手段として、図1に示すように、傍熱型抵抗溶接を採用し、その電極4で、これに、矢印a1に示すように電流を流して発熱させ、その熱を矢印a2に示すように該電極4から巻線型コイル1及びこれを介した接続端子3に伝えながら、矢印a3に示すように、該電極4で該巻線型コイル1を加圧する方法を採用することができる。これを採用した場合は、電極4を高抵抗で耐熱性の良い、例えば、タングステン(W)やモリブデン(Mo)等の金属で適切に構成すれば、実用レベルの電流で、所望の高温度を容易に発生し得、ICチップ2の接続端子3上に配した巻線型コイル1に必要な加熱及び加圧を行うことができる。
なお、前記したように、通常、前記巻線型コイル1は銅芯線1bを絶縁膜1aで被覆した銅製電線で構成されているため、以上の場合に、前記電極4による加熱で該絶縁膜1aが溶融して接続端子3のAu膜と銅芯線1bとの界面から排除され、該界面付近にAu/Cu全率固溶体の合金層5が形成され得ることになる。
なお、このような加熱・加圧操作として、直熱型パラレルギャップ抵抗溶接を用いるのは不適当である。それは、巻線型コイル1の所定部位の絶縁膜1aを予め除去して電気的接続を確保するという厄介な作業の必要性がある上に、該巻線型コイルの銅芯線1bとこれを載置する接続端子3との接触面間の電気抵抗が極めて小さいため、これらの間にその発熱のために供給し得る実用的な電流で、該接触面に十分な発熱量を得ることができないからである。また、二つの電極の内の一方は巻線型コイル1の銅芯線1bに当接接触させるものであるが、他方は、当然、接続端子3に接触させなければならず、それ故、接続端子3にそのための接触エリアを確保する必要があり、接続端子3が大型化するからである。以上のような理由から、前記したように、このような場合に直熱型パラレルギャップ抵抗溶接は実用性を認めることができない。
また前記Au/Cu全率固溶体の合金層5を形成させる「界面付近」は、銅製の巻線型コイル1の所定部位と接続端子3との当接面の範囲の観点からは、その全面積の内の少なくとも1/2以上の面積を占めるエリアであり、このエリアはできるだけ広いことが望ましい。該当接面の両側の範囲の観点からは、当接界面から数原子層から数十原子層の厚さの範囲であり、この範囲で前記Au/Cu全率固溶体の合金層5が形成されれば実用上十分な接着強度が得られる。
前記加熱しながら加圧する操作に於ける加熱温度及び加圧力は、それぞれ、前記巻線型コイル1と前記ICチップ2の接続端子3との相互の界面付近にAu/Cu全率固溶体の合金層5を形成させ得るように、実験的に決定する。より具体的には、前記加熱温度は、前記傍熱型抵抗溶接に於ける電極4を含む加熱加圧手段を接続端子3上の巻線型コイル1に当接し、その熱を該巻線型コイル1→接合面→Au膜3aと伝達した場合に、加圧された該巻線型コイル1の銅芯線1bをAu膜3aに対して相対的に塑性流動させ得る温度とすべきものであり、絶縁膜1aを溶融させてAu膜3aと銅芯線1bとの界面で金と銅との原子を直接接触させ得る温度とすべきものである。一方、銅芯線1bの表面を酸化させたり、ICチップ2に損傷を与えることのない温度とすべきでもある。また前記加圧力は、同様の場合に、十分に塑性流動させ得ると共に、ICチップ2に損傷を与えることのないそれとすべきである。
前記加熱温度は、以上のように制御すべきものであるが、前記のように、傍熱型抵抗溶接法を用いる場合は、これに供給する電流及び供給時間を制御し、これによって発生する熱量を制御し、それによって得られた接合結果からより適切な電流値及び供給時間を決定するというやり方が適当である。またこのような電流の制御は通常電圧を制御することによって行うことになる。それ故、加熱温度の制御は、多くの場合、直接的には、電極4に加える電圧及び印加時間を適切な加熱温度に対応する電圧及び印加時間に制御することで行うことになる。
電線の元の線径φDに対する塑性変形後の厚さtの割合は、接合部の信頼性を左右する重要なパラメータであることが知られている。Au膜3a及び銅芯線1bの融点より著しく低い温度で接続が行われる本発明の接続方法では特に重要である。これは、材料の種類、組み合わせ、材料の性質に左右されるが、本件の最外層がAu膜3aである接続端子3と銅製の巻線型コイル1との組み合わせについては、図5に示すように、t/D(電線の元の線径φDに対する塑性変形後の厚さtの比率)は0.1を越え、かつ0.8以下の広い範囲で安定した接合強度が得られている。
前記加圧力は、各々の融点以下の比較的低い温度(実験結果からは500℃以下の界面温度と推定される)での金と銅の原子の相互拡散をその界面近傍に於ける塑性流動によって助長・促進させるためには、前記のような塑性変形の範囲内になるように設定すべきものである。もっともt/Dが0.1に近づくと接続端子3を介してICチップ2にストレスがかかり、チップ不良率が若干高くなる傾向があるので、近づきすぎないようにするのが好ましい。
従って本発明の非接触ID識別装置用の巻線型コイルとICチップとの接続構造、並びに、非接触ID識別装置用の巻線型コイルとICチップとの接続方法によれば、巻線型コイル1とICチップ2の接続端子3とについて、前者の銅芯線1bと後者の最外層のAu膜3aとの界面付近にAu/Cu全率固溶体の合金層5を形成することにより、低コストで高い接着強度の機械的接続を確保し、かつ電気的にも良好な接続を確保することができる。より具体的に述べれば、巻線型コイル1とICチップ2の接続端子3との接合部の融点が、その界面付近に形成したAu−Cu全率固溶体の合金層5により、1000℃を越え、該接合部の半田を介した接続の欠点である、低い使用可能温度域の問題や脆い化合物層形成の問題も回避されるので、その信頼性は著しく高いものとなる。
図1に示すように、巻線型コイル1として銅芯線1bに絶縁膜1aを施した銅電線で作製したそれを採用し、該巻線型コイル1の所定部位をICチップ2の接続端子3の最外層のAu膜3a上に載置した上で、その巻線型コイル1の上から電極4を当接させ、該電極4に電流を流して発熱させつつ加圧した。
<接合対象>
巻線型コイル1の線径:φ70μm±3μm(絶縁膜1a:ポリウレタン皮膜)
ICチップ2:1000μm、Ti−W−Au(接続端子3、Au膜3aの厚さ10 μm)
<加熱・加圧手段>
電極4:W(タングステン)製、傍熱型
<溶接条件>
溶接電圧:1.8V
通電時間:0.5秒
加圧力 :80g
以下の表1に示すように、この実施例1によって接合したICチップ2の接続端子3と巻線型コイル1との接合には、従来の半田付け、熱圧着及び超音波溶接によって接合した場合と比較して、いずれにも劣らない十分に強力な接着強度が得られ、かつ温度サイクル不良率も極めて低く、これによって本発明の有効性が理解される。
Figure 0004097281
以上の表1に示した半田付け、熱圧着及び超音波溶接の接合部に対する測定結果は、いずれも実施例1と同様の巻線型コイルをICチップの接続端子に、それぞれそれらの標準的な方法で接合操作を行って得た接合部に対するものである。
<表1及び以下の表2に示した接着強度の測定方法>
感度1Nのデジタル・テンション・ゲージを用い、ICチップを固定した状態で、室温に於いて、コイルを接続端子面に垂直な方向に引っ張って、該コイルと該接続端子の接続部が剥がれるか又はコイルが切れた時のゲージの読みをその接続部の接着強度とした。
<表1及び以下の表2に示した温度サイクルの測定方法>
温度サイクル恒温槽にID識別装置を配置し、−55℃と150℃の間を往復する温度サイクルを2時間に1回の割合で100サイクル繰り返し、試験終了後にID識別装置の感度特性を測定して合否を判定した。不合格品の内、接続端子とコイルの接続部の不良であることが確認されたものを不良品とした。
巻線型コイル1として銅芯線1bに絶縁膜1aを施した銅電線で作製したそれを採用し、該巻線型コイル1の所定部位とICチップ2の接続端子3との接合を、実施例1と同様の操作で行った。
<接合対象>
巻線型コイル1の線径:φ60μm±3μm(絶縁膜1a:ポリウレタン被膜)
ICチップ2:900μm、Cr−Ni−Au(接続端子3、Au膜3aの厚さ15 μm)
<加熱・加圧手段>
電極4:Mo(モリブデン)製、傍熱型
<溶接条件>
溶接電圧:1.1V
通電時間:0.9秒
加圧力 :70g
以下の表2に示すように、この実施例2によって接合したICチップ2の接続端子3と巻線型コイル1との接合には、実施例1のそれと同様に、十分な接着強度が得られ、かつ温度サイクル不良率も極めて低い。これによって更に本発明の有効性が理解される。
Figure 0004097281
以上の表2に示した中間橋部材法による接合部は、ICチップの接続端子と巻線型コイルとを錫メッキを施した銅製のリードフレームを介して接続したものであり、ICチップの接続端子とリードフレームの一端とは導電性接着剤で接着し、リードフレームの他端と巻線型コイルとは半田付けによって接合したものである。この半田付けは標準的な操作で行ったものである。また以上の表2に示した中間橋部材法の接合部についての測定結果は、以上のようにして作製した接合部に対するものである。
本発明の実施の態様を示す断面説明図。 本発明を実施して得た接合部の平面側から見た概略斜視説明図。 図2のA−A線概略断面説明図。 図2のB−B線概略断面説明図。 接合部の接合強度及びチップ不良率とt/Dとの関係を示す表図。
符号の説明
1 巻線型コイル
1a 絶縁膜
1b 銅芯線
2 ICチップ
3 接続端子
3a Au膜(金膜)
3b 中間層
3c 最下層
4 電極
5 Au/Cu全率固溶体の合金層
a1 電流の流れる方向を示す矢印
a2 熱の伝達方向を示す矢印
a3 加圧方向を示す矢印

Claims (5)

  1. 銅(Cu)製の巻線型コイルとICチップの最外層が金(Au)で構成された接続端子とを、両者の界面付近に加熱加圧によって形成したAu/Cu全率固溶体を介して、接合した非接触ID識別装置用の巻線型コイルとICチップとの接続構造。
  2. 銅(Cu)製の巻線型コイルをICチップの最外層が金(Au)で構成された接続端子に、前者を後者上に載せ、かつ前者の上から加熱しながら加圧し、両者の界面付近にAu/Cu全率固溶体を形成させることにより、直接接合して、請求項1の非接触ID識別装置用の巻線型コイルとICチップとの接続構造を構成することとした、非接触ID識別装置用の巻線型コイルとICチップとの接続方法。
  3. 前記加熱しながら加圧する操作を傍熱型抵抗溶接によって行うこととした請求項2の非接触ID識別装置用の巻線型コイルとICチップとの接続方法。
  4. 前記加熱しながら加圧する操作に於ける加熱温度及び加圧力を、それぞれ、前記巻線型コイルと前記ICチップの接続端子との相互の界面付近にAu/Cu全率固溶体を形成させ得るように実験的に決定する請求項2又は3の非接触ID識別装置用の巻線型コイルとICチップとの接続方法。
  5. 前記加圧を、塑性変形後の巻線型コイルの該当部位の厚さtと変形前の線径Dとの比率t/Dが、0.1を越え、かつ0.8以下となるように設定した請求項2又は3の非接触ID識別装置用の巻線型コイルとICチップとの接続方法。
JP2006105177A 2006-04-06 2006-04-06 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法 Active JP4097281B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006105177A JP4097281B2 (ja) 2006-04-06 2006-04-06 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法
US12/225,293 US20100230161A1 (en) 2006-04-06 2007-03-28 Joint Structure Between a Wound Coil and An IC-Chip for a Noncontact RFID Device and Methods of Manufacturing The Same
PCT/JP2007/056554 WO2007116782A1 (ja) 2006-04-06 2007-03-28 非接触id識別装置用巻線型コイルとicチップとの接続構造及びこれを構成する接続方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006105177A JP4097281B2 (ja) 2006-04-06 2006-04-06 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法

Publications (3)

Publication Number Publication Date
JP2007280015A JP2007280015A (ja) 2007-10-25
JP2007280015A5 JP2007280015A5 (ja) 2008-02-14
JP4097281B2 true JP4097281B2 (ja) 2008-06-11

Family

ID=38581078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006105177A Active JP4097281B2 (ja) 2006-04-06 2006-04-06 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法

Country Status (3)

Country Link
US (1) US20100230161A1 (ja)
JP (1) JP4097281B2 (ja)
WO (1) WO2007116782A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4676573B1 (ja) * 2010-08-25 2011-04-27 スターエンジニアリング株式会社 非接触id識別装置用の巻線型コイルとicチップとの接続方法
EP2492847A1 (fr) * 2011-02-25 2012-08-29 NagraID S.A. Carte incorporant un transpondeur
CN116529734A (zh) * 2021-01-14 2023-08-01 凸版印刷株式会社 卡型介质以及卡型介质的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203232A (ja) * 1995-01-24 1996-08-09 Mitsubishi Materials Corp 磁気記録用ハードディスクドライブのスピンドルハブ
JPH0929424A (ja) * 1995-07-24 1997-02-04 Toshiba Corp 真空チャンバの接合方法
JP2005078268A (ja) * 2003-08-29 2005-03-24 Nec Tokin Corp Rfidタグ
JP2005275802A (ja) * 2004-03-24 2005-10-06 Omron Corp 電波読み取り可能なデータキャリアの製造方法および該製造方法に用いる基板並びに電子部品モジュール

Also Published As

Publication number Publication date
WO2007116782A1 (ja) 2007-10-18
JP2007280015A (ja) 2007-10-25
US20100230161A1 (en) 2010-09-16

Similar Documents

Publication Publication Date Title
JP5804163B2 (ja) アンテナシート、非接触型ic付データキャリア及びアンテナシートの製造方法
JP2004310619A (ja) Icカードの製造方法
CN101517734A (zh) 弹性触头和使用它的金属端子之间的接合方法
JP4097281B2 (ja) 非接触id識別装置用の巻線型コイルとicチップとの接続構造及びこれを構成する接続方法
KR100737031B1 (ko) 비접촉 통신을 실행할 수 있는 통신 매체 및 그 제조 방법
WO1999041699A1 (en) Ic card and its frame
US10282655B2 (en) Chip card module, chip card, chip card arrangement, method of forming a chip card module, and method of forming a chip card
JP2012198795A (ja) 電極部材、アンテナ回路及びicインレット
US7815122B2 (en) Method for making an electronic label and electronic label obtained by said method
JP2009031956A (ja) 接触・非接触共用型icカードと接触・非接触共用型icカードの製造方法
JP4676573B1 (ja) 非接触id識別装置用の巻線型コイルとicチップとの接続方法
JP5467577B2 (ja) 非接触型id識別装置及びその製造方法
JP7380254B2 (ja) 接触および非接触共用icカードおよび接触および非接触共用icカードの製造方法
JP7404973B2 (ja) 接触および非接触共用icカードおよびアンテナシート
JP2011248818A (ja) 非接触型通信媒体およびその製造方法
JP2009251789A (ja) 導通結合方法及びカードの製造方法
JP6554899B2 (ja) 非接触通信インレイ
CN217444374U (zh) 可改善热应力分布的半导体封装结构
CN111295672B (zh) 有线格式天线的条安装技术
JP3784687B2 (ja) フレキシブルicモジュールの製造方法及びフレキシブルicモジュールを用いた情報担体の製造方法
JP2555915B2 (ja) 金属突起物の形成方法,金属ろう材の供給方法およびそれらの治具
JP2013114454A (ja) インレット基材及びその製造方法並びに非接触icカードと冊子
JPH0671034B2 (ja) 金属突起物の形成方法および治具
JP4521954B2 (ja) Icモジュールの製造方法
JP2024016767A (ja) デュアルインターフェースicカードおよびカードケース

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071127

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071222

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20080122

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20080218

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080310

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110321

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110321

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110321

Year of fee payment: 3

S801 Written request for registration of abandonment of right

Free format text: JAPANESE INTERMEDIATE CODE: R311801

ABAN Cancellation due to abandonment
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120321

Year of fee payment: 4

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120321

Year of fee payment: 4