JP4090567B2 - ウエハ検査加工装置およびウエハ検査加工方法 - Google Patents

ウエハ検査加工装置およびウエハ検査加工方法 Download PDF

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Publication number
JP4090567B2
JP4090567B2 JP12746798A JP12746798A JP4090567B2 JP 4090567 B2 JP4090567 B2 JP 4090567B2 JP 12746798 A JP12746798 A JP 12746798A JP 12746798 A JP12746798 A JP 12746798A JP 4090567 B2 JP4090567 B2 JP 4090567B2
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Japan
Prior art keywords
wafer
sample
ion beam
stage
inspection processing
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Expired - Lifetime
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JP12746798A
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English (en)
Japanese (ja)
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JPH11330186A (ja
JPH11330186A5 (enrdf_load_html_response
Inventor
裕介 矢島
馨 梅村
新一 田地
久弥 村越
博之 品田
真理 野副
敦子 ▲高▼藤
正樹 長谷川
浩士 牧野
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP12746798A priority Critical patent/JP4090567B2/ja
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Publication of JPH11330186A5 publication Critical patent/JPH11330186A5/ja
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  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP12746798A 1998-05-11 1998-05-11 ウエハ検査加工装置およびウエハ検査加工方法 Expired - Lifetime JP4090567B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12746798A JP4090567B2 (ja) 1998-05-11 1998-05-11 ウエハ検査加工装置およびウエハ検査加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12746798A JP4090567B2 (ja) 1998-05-11 1998-05-11 ウエハ検査加工装置およびウエハ検査加工方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005134893A Division JP4091060B2 (ja) 2005-05-06 2005-05-06 ウエハ検査加工装置およびウエハ検査加工方法
JP2006277460A Division JP4303276B2 (ja) 2006-10-11 2006-10-11 電子線及びイオンビーム照射装置並びに試料作成方法

Publications (3)

Publication Number Publication Date
JPH11330186A JPH11330186A (ja) 1999-11-30
JPH11330186A5 JPH11330186A5 (enrdf_load_html_response) 2005-09-29
JP4090567B2 true JP4090567B2 (ja) 2008-05-28

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JP12746798A Expired - Lifetime JP4090567B2 (ja) 1998-05-11 1998-05-11 ウエハ検査加工装置およびウエハ検査加工方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103965914A (zh) * 2013-01-25 2014-08-06 上海华虹宏力半导体制造有限公司 蚀刻npn掺杂区域形貌以进行失效检验的组合物及检验方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090312A (ja) * 2000-09-21 2002-03-27 Hitachi Ltd 欠陥分析システム
CN100373573C (zh) * 2005-01-06 2008-03-05 中芯国际集成电路制造(上海)有限公司 深次微米半导体器件中致命缺陷的确认方法
KR20080043768A (ko) * 2005-07-30 2008-05-19 전자빔기술센터 주식회사 마이크로칼럼을 이용한 미세 패턴 및 형상 검사장치
KR101051730B1 (ko) * 2006-08-01 2011-07-25 가부시키가이샤 시마쓰세사쿠쇼 기판 검사 및 수정 장치와 기판 평가 시스템
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
US8134124B2 (en) * 2006-10-20 2012-03-13 Fei Company Method for creating S/tem sample and sample structure
JP5321490B2 (ja) * 2010-02-08 2013-10-23 新日鐵住金株式会社 微粒子分析方法
JP2011233249A (ja) * 2010-04-23 2011-11-17 Tokyo Institute Of Technology イオンビーム照射位置決め装置
CN109411396B (zh) * 2018-11-29 2024-06-04 天津中环领先材料技术有限公司 一种六轴机器人辅助目检硅片装置及辅助检测方法
CN110006937A (zh) * 2019-04-02 2019-07-12 深圳鸿鹏新能源科技有限公司 利用扫描电镜在极限分辨率下测试样品的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103965914A (zh) * 2013-01-25 2014-08-06 上海华虹宏力半导体制造有限公司 蚀刻npn掺杂区域形貌以进行失效检验的组合物及检验方法
CN103965914B (zh) * 2013-01-25 2016-06-08 上海华虹宏力半导体制造有限公司 蚀刻npn掺杂区域形貌以进行失效检验的组合物及检验方法

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