JP4088430B2 - Method for producing epoxy resin composition for semiconductor encapsulation - Google Patents

Description

実施例１，２共に良好な試験結果が得られた。特に実施例２において混練量を増加したにかかわらずバリ長さは短かった。これは、溶融開始部をヒータで加熱することにより、樹脂組成物の溶融が促進されて十分に混練されたものと考えられる。
【００４６】
一方、従来の方法である比較例１ではバリ長さが短かったが、比較例２において混練量を増加させるとバリ長さが長くなった。これは、混練量を増加させたことで、溶融開始部での溶融が不十分となり、混練不足によりバリ長さが長くなったものと考えられる。
【００４７】
（４）連続運転実験
また、本発明に係る混練装置としての信頼性と安定性を確認するために混練装置の連続運転実験を行った。すると、実施例１、２のいずれの条件下においても本発明に係る混練機を８０時間以上連続運転させることが可能であった。さらに、実施例１、２の条件下で混練機を１２０時間連続運転させた後に得られた樹脂組成物の流動性とバリ特性を前記と同様に評価したところ、前記実施例１、２の実験結果と同様の良好な結果が得られた。
【００４８】
従って、本発明に係る半導体封止用エポキシ樹脂組成物の混練装置によれば、良好な半導体封止用エポキシ樹脂組成物が得られることの他に、装置の信頼性と安定性の向上を図ることが可能になることが確認された。
【００４９】
以上本発明について説明してきたが、本発明は上記発明に限定されるものではない。従って、実施例においては２軸混練機を用いたが、１軸混練機等を用いてもかまわない。
【００５０】
【発明の効果】
本発明は、以上のような構成を有することより、生産性良く、流動特性及びバリ特性が改善された半導体封止用エポキシ樹脂組成物が提供される。
【図面の簡単な説明】
【図１】図１は、本発明に用いら２軸混練機の幅方向の断面図を示す。
【図２】図２は、本発明に用いら２軸混練機の長手方向の断面図を示す。
【図３】図３は、従来の２軸混練機の幅方向の断面図を示す。
【図４】図４は、従来の２軸混練機の長手方向の断面図を示す。
【符号の説明】
１ ２軸混練機（混練装置）
１０ａ，１０ｂ 軸部品
１１ 内部壁
１２ 混練部
１３ 胴体の内部構成部材
１４ 胴体の外部構成部材
１５ ジャケット
１６ 供給口
１７ 吐出口
１８ 軸方向部材
１９ 仕切り
２０ ヒータ（加熱手段）
２１ 温調媒体の入出口[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing an epoxy resin composition for semiconductor encapsulation, an epoxy resin composition for semiconductor encapsulation produced by the method, and a kneading apparatus for the epoxy resin composition for semiconductor encapsulation for use in the method. . Moreover, this invention relates to the semiconductor device provided with the element sealed with the said epoxy resin composition for semiconductor sealing.
[0002]
[Prior art]
In general, a resin composition for encapsulating a semiconductor is composed of an epoxy resin excellent in electrical characteristics, heat resistance, mass productivity and the like, an additive such as a curing agent, a catalyst, a release agent, a flame retardant, and a colorant, and a composition ratio of 70. It is composed of a filler occupying ~ 95% by weight. As a manufacturing method thereof, a predetermined amount of components constituting the resin composition are blended and mixed, and then kneaded by a roll, a single screw extruder, a combination of a single screw extruder and a roll, or a twin screw extruder. A process is performed in which the product is rolled into a sheet, pulverized after cooling, and processed into a cylindrical tablet as necessary. Among these processes, a twin-screw kneader excellent in productivity is often used in the kneading process.
[0003]
Here, a conventional twin-screw kneader will be briefly described with reference to the drawings. 3 and 4 respectively show sectional views in the width direction and the longitudinal direction of a biaxial kneader 100 which is an aspect of a conventional kneading apparatus. The conventional biaxial kneader includes shaft parts 110a and 110b that rotate inside the kneader, a jacket 115 that forms the body of the kneader, and a kneading part that is attached to the inside of the jacket and that is between the shaft parts. The inner wall 111 is formed.
[0004]
Here, the jacket 115 adjusts the temperature by heating or cooling the resin composition in the kneading part. The shaft parts 110a and 110b are composed of screws and kneading parts.
[0005]
Two shaft parts 110a and 110b having a substantially equilateral triangular cross section are arranged in parallel at the approximate center of the kneader 100. These shaft components 110a and 110b are configured to rotate in the same direction. In addition, a kneading part 112 is formed by providing an internal wall 111 so as to surround the shaft parts 110a and 110b. The inner wall 111 is made of a wear-resistant material to prevent abrasion due to silica used as an inorganic filler of the resin composition, and is configured to be detachably fitted in order to be replaceable at a stage where wear has progressed to some extent. Has been. Furthermore, a jacket 115 is provided on the outer periphery of the inner wall 111 to flow a heating medium for heating or cooling the resin composition of the kneading part 112. The jacket 115 is provided on the outer periphery of the inner wall 111, and is formed of an inner component member 113, an outer component member 114, and an axial member 118. The jacket 115 in which the inner wall 111 is fixed to the axial member 118 by the screw 122 is partitioned by an axial partition 119, and a temperature control medium inlet / outlet 121 is provided in the partitioned jacket, and the temperature is controlled for each jacket. The Further, a supply port 116 and a discharge port 117 are provided on the upper and lower sides, respectively, in the direction of feeding the resin composition. The jacket 115 and the inner wall 111 are vertically divided into two so that the inner wall can be replaced and the kneading part can be cleaned.
[0006]
With this configuration, when the resin composition is supplied to the kneading part and the shaft parts 110a and 110b are rotated, the resin is kneaded and the resin is melted by the frictional heat generated at that time. Kneading is promoted. In addition, heating the resin composition using the jacket 115 further promotes melting of the resin. The heat-melted resin is kneaded according to the rotational motion of the shaft parts 110a and 110b, and is sent out along the axial direction of the shaft parts 110a and 110b and finally discharged from the discharge port 117. .
[0007]
By the way, in recent years, semiconductor devices such as LSIs and ICs have been improved in the degree of integration, the device size has been increased, the package size has been reduced, and the thickness has been reduced. . In particular, the surface-mount type package is exposed to a high temperature of 200 ° C. or higher when soldering to the substrate. At this time, the moisture contained in the package is vaporized, and the vapor pressure generated here acts as a peeling stress at the interface between the resin and the insert of the element, lead frame, etc., causing peeling between the resin and the insert, and further cracking It will lead to. In such a package, there is a high possibility that reliability will be lowered with the occurrence of peeling and cracking. As a countermeasure against such peeling and cracking, for example, a resin composition containing a biphenyl type epoxy resin and having a maximum filler amount of 90% has been proposed. (JP-A-4-50257, JP-A-3-116953, etc.). As described above, recently, since the content of the inorganic filler tends to increase, the viscosity of the resin composition increases and it becomes more difficult to melt in the kneading part. Therefore, there has been a strong demand for a method for efficiently melting the resin composition and efficiently kneading the resin composition.
[0008]
However, since the inner wall 111 of the conventional kneading machine 100 has a fitting-type configuration, a gap as an inevitable air layer is designed between the inner wall 111 and the inner structural member 113 of the body of the jacket 115. The gap and the inner component of the jacket become a large heat transfer resistance, making it difficult to sufficiently heat the resin. For this reason, the resin is not sufficiently melted, and as a result, the burr length of the epoxy resin composition for semiconductor encapsulation due to insufficient kneading is increased.
[0009]
As a means for solving the above problem, conventionally, a method has been adopted in which the kneading amount of the resin composition is reduced to promote melting of the resin composition by heating. In addition, methods such as devising the temperature setting of the jacket of the biaxial kneader have been taken. For example, the method of manufacturing a resin composition for encapsulating a semiconductor, characterized in that “the kneading portion of the jacket of the kneading portion is kneaded while being heated or kept at 30 ° C. to 150 ° C.” in the claims of Japanese Patent Laid-Open No. 06-226736 Is disclosed.
[0010]
[Problems to be solved by the invention]
However, according to the above method, although the problem of the burr property of the epoxy resin composition for semiconductor encapsulation is improved, the productivity is poor, and there is room for further improvement in industrial implementation.
[0011]
That is, in the method of reducing the kneading amount of the resin composition, it is difficult to produce a large amount of an epoxy resin composition for semiconductor encapsulation, although heat is easily transferred to the resin composition.
[0012]
Further, in the method of devising the temperature setting of the jacket of the kneader, the apparatus becomes large in order to set the temperature of the inner wall to 100 ° C. or more, and the capital investment cost is required.
[0013]
Accordingly, an object of the present invention is to provide a method for producing an epoxy resin composition for semiconductor encapsulation having improved flow characteristics and burr characteristics with high productivity in order to solve the conventional problems. Moreover, this invention aims at providing the kneading apparatus of the epoxy resin composition for semiconductor sealing for use in the said method, the epoxy resin composition for semiconductor sealing manufactured by the said method, and its use.
[0014]
[Means for Solving the Problems]
As a result of diligent research, the inventors of the present invention manufactured an epoxy resin encapsulant for semiconductor encapsulation with improved flow characteristics and burr characteristics by providing a heating portion at a predetermined position and heating and melting the resin with high productivity. The present invention has been completed by knowing that the above has been achieved.
[0015]
That is, as a first aspect, in the present invention, when the epoxy resin composition for semiconductor encapsulation is kneaded using a kneading apparatus, melting is accelerated by heating by a heating unit provided near the supply port of the kneading apparatus. It is related with the manufacturing method of the epoxy resin composition for semiconductor sealing characterized by knead | mixing the obtained resin.
[0016]
In this case, it is preferable that the heating unit is provided in close contact with the inner wall. More preferably, the heating unit is provided outside the inner wall. Moreover, it is convenient for the inner wall heated by the heating part of the kneading apparatus to be set at 80 ° C. or higher and 200 ° C. or lower.
[0017]
As a second aspect, the present invention relates to an epoxy resin composition for semiconductor encapsulation, which is obtained by the method for producing an epoxy resin composition for semiconductor encapsulation.
[0018]
In this case, the epoxy resin composition for semiconductor encapsulation preferably contains an epoxy resin, an epoxy resin curing agent, and an inorganic filler. More preferably, the blending amount of the inorganic filler in the epoxy resin composition for semiconductor encapsulation is 70% by weight or more and 95% by weight or less of the entire composition.
[0019]
As a third aspect, the present invention relates to a semiconductor device sealed with the semiconductor sealing epoxy resin composition.
[0020]
As a fourth aspect, the present invention provides a kneading apparatus for an epoxy resin composition for semiconductor encapsulation, comprising a kneading section and an inner wall provided around the kneading section, wherein the supply port of the kneading apparatus The present invention relates to a kneading apparatus for an epoxy resin composition for semiconductor encapsulation, characterized in that a heating means for promoting heating and melting of the epoxy resin composition is provided in the vicinity.
[0021]
In this case, the heating means is preferably a heater. The heating means is preferably provided in close contact with the inner wall. More preferably, the heating means is provided outside the inner wall.
[0022]
It is preferable that the inner wall heated by the heating unit of the kneading apparatus is set to 80 ° C. or more and 200 ° C. or less. It is also convenient to knead an epoxy resin composition containing 70 wt% or more and 95 wt% or less of an inorganic filler.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described.
The epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin and an epoxy resin curing agent, and preferably further contains an inorganic filler from the viewpoint of reducing the linear expansion coefficient.
[0024]
First, the epoxy resin used in the present invention will be described.
Examples of the epoxy resin used in the present invention include phenols such as phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, and bisphenol A type epoxy resin, which are generally used in epoxy resin compositions for semiconductor encapsulation. Epoxy resin obtained by epoxidizing novolak resin synthesized from aldehydes, glycidyl ether such as bisphenol A, bisphenol F, bisphenol S, alkyl-substituted bisphenol, polyamines such as diaminodiphenylmethane, isocyanuric acid and the like and obtained by reaction with epichlorohydrin Glycidylamine type epoxy resin, epoxidized product of co-condensation resin of dicyclopentadiene and phenol, biphenyl type epoxy resin, epoxy resin having naphthalene ring, naphthol alcohol Using epoxidized kill resin, trimethylolpropane type epoxy resin, terpene modified epoxy resin, linear aliphatic epoxy resin obtained by oxidizing olefin condensation with peracid such as peracetic acid, and aliphatic epoxy resin Also good.
[0025]
In addition, as the epoxy resin curing agent, those generally used in epoxy resin compositions for semiconductor encapsulation, phenols such as phenol, cresol, resilcine, catechol, bisphenol A, bisphenol F, or α-naphthol, Examples thereof include novolak type phenol resins obtained by condensation or cocondensation of naphthols such as β-naphthol and dihydroxynaphthalene and aldehydes such as formaldehyde under an acidic catalyst. In addition, these hardening | curing agents can be used individually or in combination of 2 or more types. The blending amount of the curing agent with respect to the epoxy resin is preferably set such that the ratio of the number of epoxy groups in the epoxy resin / the hydroxyl group in the curing agent is in the range of 0.7 to 1.3.
[0026]
The inorganic filler used in the present invention is not particularly limited, but includes fused silica powder, crystalline silica powder, alumina, zircon, calcium silicate, calcium carbonate, silicon carbide, aluminum nitride, boron nitride, beryllia, zirconia, etc. One or more kinds of powders, beads obtained by spheroidizing these, single crystal fibers such as potassium titanate, silicon carbide, silicon nitride, and alumina, glass fibers, and the like can be blended and used. Furthermore, examples of the inorganic filler having a flame retardant effect include aluminum hydroxide, magnesium hydroxide, zinc borate and the like, and these can be used alone or in combination. In addition, the compounding quantity of an inorganic filler is 70 to 95 weight% of the whole composition from the point of a hygroscopic property and the reduction of a linear expansion coefficient, Preferably it is 80 to 93 weight%.
[0027]
In addition, the epoxy resin composition of the present invention uses various additives such as a curing accelerator, a flame retardant, a release agent, a colorant, a coupling agent, a silicone stress relieving agent, or an ion trapping agent as necessary. be able to.
[0028]
Next, the kneading apparatus used in the present invention will be described. 1 and 2 respectively show cross-sectional views in the width direction and the longitudinal direction of a biaxial kneader 1 as an embodiment of a kneading apparatus used in the present invention. In addition, about the thing which has the same function as what was demonstrated in FIG.3, 4, the last two digits attach | subject the same code | symbol, and abbreviate | omit the description.
[0029]
As shown in FIGS. 1 and 2, the kneader used in the present invention includes two shaft parts 10a and 10b, an inner wall 11 provided around the shaft part, and a space between the shaft part and the inner wall. Are mainly composed of a kneading section 12, a jacket 15, and a flat heater 20 as a heating means.
[0030]
The kneading part 12 is formed by providing the inner wall 11 in a fitting manner so as to surround the two shaft parts 10a, 10b. The jacket 15 is provided on the outer periphery of the internal wall 11 between the internal structural member 13 and the external structural member 14 of the body. The inner component member 13 and the outer component member 14 are welded to the axial member 18 to form a fuselage. The inner wall 11 is fixed to the axial member 18 by screws 22. Furthermore, a supply port 16 and a discharge port 17 are provided on the upper and lower sides of the resin feed direction, respectively. In the vicinity of the resin supply port 16, a flat heater 20 is disposed so as to cover the outside of the inner wall so as to form a heating region for heating the resin to promote melting.
[0031]
Since it comprised in this way, if resin is supplied through the supply port 16 of this kneader, resin will be efficiently heated and melted by the heater 20 provided in the vicinity of the supply port. Further, the provision of the jacket 15 so as to cover the heater 20 prevents the heat of the heater 20 from escaping, and does not hinder the effect of the heater. The heated and melted resin is kneaded according to the rotational movement of the shaft parts 10a and 10b, and is sent out along the axial direction of the shaft parts 10a and 10b and finally discharged from the discharge port 17. .
[0032]
A desired epoxy resin composition can be obtained by appropriately adjusting the resin supply speed of the kneading apparatus 1, the rotation speed of the shaft components, and the heating temperature of the heater.
[0033]
The kneading apparatus used in the present invention is not particularly limited as long as it can knead the epoxy resin composition for semiconductor encapsulation and can be attached with a heating means. Therefore, a kneading apparatus provided with heating means in a conventionally known kneading apparatus can be used. As the kneading apparatus used in the present invention, for example, it is preferable to use a continuous kneader in which shaft parts such as a uniaxial kneader and a biaxial kneader are covered with a body. Among these, it is particularly preferable to use a biaxial kneader from the viewpoint of production efficiency. These are commercially available, for example, trade name KRC Kneader (manufactured by Kurimoto Steel Works).
[0034]
The heating means used in the present invention is not particularly limited as long as the semiconductor sealing epoxy resin composition can be heated and melted. Specifically, what can heat the internal wall of a kneading apparatus to 80-200 degreeC is used.
[0035]
These heating means are disposed in the vicinity of the supply port of the kneader as shown in FIGS. This is because the resin composition is efficiently melted and the subsequent kneading is promoted by arranging the heating means in the vicinity of the supply port of the kneader. In this case, it is preferable to arrange so as to be in close contact with the inner wall. This is because the gap between the inner wall and the heating means is eliminated by bringing the heating means into close contact with the inner wall, and the heat transfer effect is enhanced.
[0036]
Further, the temperature of the inner wall is set to 80 ° C. or higher and 200 ° C. or lower by adjusting the temperature of the heating means. If the temperature is less than 80 ° C., the melting of the resin is not promoted, and if the temperature is higher than 200 ° C., the resulting melting effect is the same, but it is economically disadvantageous. Preferably, the temperature of the inner wall is set to 90 ° C. or higher and 180 ° C. or lower.
[0037]
Although there is no restriction | limiting in particular as a heating means, From a viewpoint of heat-transfer efficiency, an availability, and attachment ease, a heater is preferable and especially a flat heater is more preferable.
[0038]
As another aspect of the present invention, there is provided an epoxy resin composition for semiconductor encapsulation obtained by the production method of the present invention. Preferably, the compounding amount of the epoxy resin composition for semiconductor encapsulation, which contains an epoxy resin, an epoxy resin curing agent, and an inorganic filler, and the inorganic filler is 70% by weight or more and 95% of the total composition. An epoxy resin composition for encapsulating a semiconductor that is not more than wt% is provided.
[0039]
Moreover, the epoxy resin composition for semiconductor encapsulation obtained by the production method of the present invention is excellent in fluidity and burr characteristics, so that as another aspect of the present invention, the epoxy resin for semiconductor encapsulation is used. Provided is a semiconductor device including an element sealed with a composition.
[0040]
【Example】
EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but it goes without saying that the present invention is not limited to the following examples.
[0041]
(Examples 1 and 2 and Comparative Examples 1 and 2)
(1) Preparation of Epoxy Resin Composition An epoxy equivalent of 196, a biphenyl type epoxy tree species having a melting point of 106 ° C. (trade name YX-4000H manufactured by Japan Epoxy Resin Co., Ltd.), 4.3 parts by weight, an epoxy equivalent of 75, a softening point Bisphenol A type brominated epoxy resin (trade name ESB-400T, manufactured by Sumitomo Chemical Co., Ltd.) having a bromine content of 48 wt% at 80 ° C., and a phenol novolac resin (Maywa Kasei Co., Ltd.) having a softening point of 80 ° C. Product name H-1) 4.8 parts by weight, triphenylphosphine 0.2 parts by weight, average particle diameter 17.5 μm, specific surface area 3.8 m ² / g spherical fused silica 88 parts by weight, antimony trioxide 0.3 Parts by weight, 0.2 parts by weight of montanic acid ester (manufactured by Clariant), 0.2 parts by weight of carbon black (trade name MA-100 manufactured by Mitsubishi Chemical Corporation) , And 0.5 parts by weight of γ-glycidoxypropyltrimethoxysilane (epoxysilane coupling agent) are mixed and pre-kneaded (dry blended), and then a biaxial kneader is used as shown in (2) below. And kneading to obtain an epoxy resin composition for semiconductor encapsulation.
[0042]
(2) Kneading experiment A kneading experiment was performed using the biaxial kneader shown in Figs. As shown in FIGS. 1 and 2, the biaxial kneader covers the outer surface of the inner wall of the KRC kneader T5 type kneader manufactured by Kurimoto Iron Works, and in the vicinity of the resin composition supply port. A flat heater is arranged. The premixed epoxy resin composition was supplied through the supply port of the kneader and heated and kneaded according to the experimental conditions shown in Table 1 to obtain an epoxy resin composition for semiconductor encapsulation.
Next, the fluidity and burr characteristics of the obtained resin composition were evaluated according to the evaluation method (3) below.
[0043]
(3) Evaluation Method Spiral Flow (Indicator of Fluidity): Using a spiral flow mold conforming to EMM11-66 (ASTM D3123), the semiconductor epoxy resin machine composition was subjected to conditions of 180 ° C. and 6.9 MPa. It shape | molded and the flow length (cm) was measured. Burr characteristics: Molding epoxy resin composition for semiconductor encapsulation under conditions of 180 ° C and 6.9MPa using molds with slit thicknesses of 2μm, 5μm, 10μm, 20μm and 30μm according to EMMI standard Then, the distance (mm) flowing out to each slit was measured, and the maximum value was taken as the value of the burr length.
[0044]
Table 1 summarizes the experimental conditions and experimental results.
[0045]
[Table 1]

Good test results were obtained in both Examples 1 and 2. In particular, in Example 2, the burr length was short despite increasing the kneading amount. This is considered to be because the melting of the resin composition was promoted and sufficiently kneaded by heating the melting start portion with a heater.
[0046]
On the other hand, in Comparative Example 1, which is a conventional method, the burr length was short, but in Comparative Example 2, when the kneading amount was increased, the burr length was increased. This is presumably because the kneading amount was increased, the melting at the melting start portion was insufficient, and the burr length was increased due to insufficient kneading.
[0047]
(4) Continuous operation experiment In order to confirm the reliability and stability of the kneading apparatus according to the present invention, a continuous operation experiment of the kneading apparatus was conducted. Then, it was possible to operate the kneader according to the present invention continuously for 80 hours or more under any of the conditions of Examples 1 and 2. Furthermore, when the fluidity and burr characteristics of the resin composition obtained after the kneader was continuously operated for 120 hours under the conditions of Examples 1 and 2 were evaluated in the same manner as described above, the experiments of Examples 1 and 2 were performed. Good results similar to the results were obtained.
[0048]
Therefore, according to the kneading apparatus for an epoxy resin composition for semiconductor encapsulation according to the present invention, in addition to obtaining an excellent epoxy resin composition for semiconductor encapsulation, the reliability and stability of the apparatus are improved. It was confirmed that it would be possible.
[0049]
Although the present invention has been described above, the present invention is not limited to the above invention. Therefore, although the biaxial kneader was used in the examples, a uniaxial kneader or the like may be used.
[0050]
【The invention's effect】
The present invention provides an epoxy resin composition for semiconductor encapsulation with improved productivity and improved flow characteristics and burr characteristics by having the above-described configuration.
[Brief description of the drawings]
FIG. 1 is a sectional view in the width direction of a twin-screw kneader used in the present invention.
FIG. 2 is a longitudinal sectional view of a twin screw kneader used in the present invention.
FIG. 3 is a cross-sectional view in the width direction of a conventional biaxial kneader.
FIG. 4 is a longitudinal sectional view of a conventional biaxial kneader.
[Explanation of symbols]
1 Biaxial kneader (kneader)
10a, 10b Shaft component 11 Internal wall 12 Kneading part 13 Body internal component 14 Body external component 15 Jacket 16 Supply port 17 Discharge port 18 Axial member 19 Partition 20 Heater (heating means)
21 Entrance / exit of temperature control medium

Claims (7)

Method for producing epoxy resin composition for semiconductor encapsulation using a continuous kneading apparatus comprising a kneading part, an inner wall provided around the kneading part, and a jacket for adjusting the temperature provided on the outer periphery of the inner wall Because
Promoting the melting of the epoxy resin composition using a heater provided in close contact with the inner wall between the jacket and the inner wall near the supply port of the continuous kneading device ;
Kneading the epoxy resin composition whose melting has been accelerated, and
The method for producing an epoxy resin composition for semiconductor encapsulation, wherein the inner wall is configured to be detachably fitted . 2. The method for producing an epoxy resin composition for semiconductor encapsulation according to claim 1, wherein an inner wall heated by a heater of the continuous kneading apparatus is set to 80 ° C. or more and 200 ° C. or less. Manufacturing method of the heater semiconductor encapsulating epoxy resin composition according to claim 1 or 2, characterized in that provided on the downstream side of the supply port. A continuous kneading apparatus for an epoxy resin composition for semiconductor encapsulation, comprising a kneading part, and an inner wall provided around the kneading part,
A jacket for temperature adjustment provided on the outer periphery of the inner wall;
A heater that is provided in close contact with the inner wall between the jacket and the inner wall in the vicinity of the supply port of the continuous kneading device, and that promotes heat melting of the epoxy resin composition,
A continuous kneading apparatus for an epoxy resin composition for semiconductor sealing, wherein the inner wall is configured to be detachably fitted . Continuous kneading apparatus of a semiconductor encapsulating epoxy resin composition according to claim 4, inner wall that is heated by the heater of the continuous kneading apparatus is characterized in that it is set to 80 ° C. or higher 200 ° C. or less. 6. The continuous kneading apparatus for an epoxy resin composition for semiconductor encapsulation according to claim 4 , wherein an epoxy resin composition containing 70 wt% or more and 95 wt% or less of an inorganic filler is kneaded. The said heater is provided in the downstream of the supply port, The continuous kneading apparatus of the epoxy resin composition for semiconductor sealing in any one of Claims 4-6 characterized by the above-mentioned.

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