JP4083493B2 - 表示装置及び当該表示装置を具備する電子機器 - Google Patents
表示装置及び当該表示装置を具備する電子機器 Download PDFInfo
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- JP4083493B2 JP4083493B2 JP2002221562A JP2002221562A JP4083493B2 JP 4083493 B2 JP4083493 B2 JP 4083493B2 JP 2002221562 A JP2002221562 A JP 2002221562A JP 2002221562 A JP2002221562 A JP 2002221562A JP 4083493 B2 JP4083493 B2 JP 4083493B2
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- transistor
- wiring
- electrically connected
- gate
- tft
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Shift Register Type Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002221562A JP4083493B2 (ja) | 2002-07-30 | 2002-07-30 | 表示装置及び当該表示装置を具備する電子機器 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001229054 | 2001-07-30 | ||
| JP2002221562A JP4083493B2 (ja) | 2002-07-30 | 2002-07-30 | 表示装置及び当該表示装置を具備する電子機器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002221125A Division JP3590398B2 (ja) | 2001-07-30 | 2002-07-30 | 半導体装置、表示装置及び電子機器 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2004064528A JP2004064528A (ja) | 2004-02-26 |
| JP2004064528A5 JP2004064528A5 (enExample) | 2005-10-20 |
| JP2004064528A6 JP2004064528A6 (ja) | 2006-10-12 |
| JP4083493B2 true JP4083493B2 (ja) | 2008-04-30 |
Family
ID=31941841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002221562A Expired - Fee Related JP4083493B2 (ja) | 2002-07-30 | 2002-07-30 | 表示装置及び当該表示装置を具備する電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4083493B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294815A (ja) * | 2004-03-12 | 2005-10-20 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び半導体装置 |
| SG115733A1 (en) | 2004-03-12 | 2005-10-28 | Semiconductor Energy Lab | Thin film transistor, semiconductor device, and method for manufacturing the same |
| JP5467454B2 (ja) | 2009-09-01 | 2014-04-09 | Nltテクノロジー株式会社 | ブートストラップ回路及びレベルシフト回路並びにワード線駆動回路 |
| WO2011070929A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US8736315B2 (en) | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2002
- 2002-07-30 JP JP2002221562A patent/JP4083493B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004064528A (ja) | 2004-02-26 |
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