JP4083435B2 - Deposition frame for electrode formation of piezoelectric material - Google Patents

Deposition frame for electrode formation of piezoelectric material Download PDF

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Publication number
JP4083435B2
JP4083435B2 JP2002023926A JP2002023926A JP4083435B2 JP 4083435 B2 JP4083435 B2 JP 4083435B2 JP 2002023926 A JP2002023926 A JP 2002023926A JP 2002023926 A JP2002023926 A JP 2002023926A JP 4083435 B2 JP4083435 B2 JP 4083435B2
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Prior art keywords
plate
vapor deposition
mask
piezoelectric element
frame
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JP2002023926A
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JP2003221668A (en
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晃基 本田
良弘 杉沼
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、圧電素板に励振電極を形成する際に用いる圧電素板の電極形成用の蒸着枠に関する。
【0002】
【従来の技術】
従来、圧電材料を所定の角度に切断して板状に成形し、板面に真空蒸着などにより金属薄膜からなる電極を形成して圧電振動を励振する圧電振動子の電極形成が一般的に知られている。このような圧電振動子は電子回路の多くの分野でクロック信号である周波数などの基準信号として広く用いられている。特に圧電素板に水晶を用いた水晶振動子は、水晶材料が圧電材料で最も優れたクロック信号特性と、昨今では安価なコストで大量に水晶振動子が製造できることなどから広い分野、製品に使われている。
【0003】
水晶振動子の製造工程では、圧電素板に励振電極を形成する場合に、たとえば真空雰囲気において、アルミ、銀、金などの電極を構成する金属を加熱して金属蒸気(いわゆる真空蒸着法)を発生させ、真空雰囲気内で圧電素板に金属薄膜を蒸着し電極を形成するようにしている。このような真空蒸着によって電極を形成する場合、真空雰囲気内に生産性を高めるために複数個の圧電素板を蒸着枠に挟持して蒸着を行うようにしている。
【0004】
図3は今日主に使用している蒸着枠の一例を示す斜視図で、補助枠とマスク板とスペーサ板から構成され、スペーサ板には電極を形成すべき圧電素板の外形形状に対応した保持孔を形成し、この保持孔に圧電素板4を配設する。また、マスク板にはそれぞれ圧電素板4の両側板面に形成すべき励振電極の形状に対応したマスク孔を形成している。そしてスペーサ板の保持孔に圧電素板4を配置させてその両側にマスク板と補助枠を配置し、これらすべてをネジ止めにより接合するようにして蒸着枠を構成している。
【0005】
このような蒸着枠に圧電素板4を挟持する場合には、各圧電素板4に対して均一に締め付け力を作用させ、マスク板を圧電素板4の板面に密着させる必要があることから、蒸着枠全体をネジ止めする上では比較的狭い間隔で多数のネジ接合部を設けて厚み方向(板面同士を張合わせる形)に締め付けて一体化するようにしている。実際の製造工程では日々の蒸着工程の作業量として、蒸着枠をすべてばらばらにし、スペーサ板に圧電素板を配置し、改めてマスク板、補助枠をネジ止め作業により、スペーサ板、マスク板、補助枠が一枚の平板状で一体化することとなり、非常に手間を要する作業工程となっている。また、蒸着装置自身においても一工程の蒸着作業がバッチ処理ということで作業時間を要する要因を持っている。
【0006】
【発明が解決しようとする課題】
そこで上記の従来の作業方法を改善するために、蒸着工程を中心に改善を試みることにした。そのひとつとして、従来の真空蒸着方法と他の蒸着方法のスパッター式の蒸着方法である。以下に簡単に蒸着方法の概念を説明する。
【0007】
真空蒸着法は真空雰囲気中における被蒸着物(例えば水晶材料などの圧電素板)に、電極金属材料(例えばアルミ、銀、金など)を加熱し電極金属材料が飛散する現象を利用して、被蒸着物に電極金属材料を付着されるものである。
【0008】
従って、一般に言うバッチ処理(被蒸着物を蒸着機に入れ、蒸着作業をしてその終了までの1工程を言う)が基本となる蒸着作業となり、一蒸着作業が終わる度に、次の蒸着作業を行うと言った断続的な作業となる。また、蒸着自体電極金属材料を加熱して飛散させる条件として高い真空雰囲気を必要とすることから、実際の電極金属材料の飛散時間に対し、その条件に達するまでの時間も必要とすることから、蒸着作業の1工程には時間を要してしまう。
【0009】
これに対し、スパッター式蒸着法は、電極金属材料に例えばアルゴンガスなどの不活性ガスや、酸素との混合ガスの雰囲気中であることから、同じ真空雰囲気ではあるものの、真空蒸着ほどの高い真空雰囲気は必要としない。また、このガス雰囲気中で電極金属材料にイオンビームとしてイオンをぶつけることで、電極金属材料が飛散し、この飛散した電極金属材料を真空蒸着法と同様に被蒸着物に付着させる方法である。
【0010】
そのため、真空蒸着法に比べて蒸着環境条件を満足するまでに必要とする時間を短縮でき、更にはバッチ処理ではなく連続的な蒸着作業の実現も行うことができることから、蒸着作業自体の効率改善を行うことができる。
【0011】
しかし、スパッター式蒸着法では、圧電素板とマスク板の僅かな隙間に電極金属材料が飛散してしまう可能性が高いことから、マスク板と圧電素板が今まで以上に密着した構造の蒸着枠を使用する必要がでてくる。
【0012】
このように蒸着手法を改善することで従来の蒸着工程を改善することはできたものの、前述の蒸着枠を用いることで電極金属材料の蒸着面以外への飛散防止という課題が残ってしまう。
【0013】
【課題を解決するための手段】
そこで本発明は、圧電素板を複数個収納し保持するスペーサ板と、該スペーサ板に収納した該圧電素板単位に形成すべき電極形状に対応するマスク孔を配置した第1と第2のマスク板および、第1と第2の補助枠とで構成され、該第1のマスク板は該スペーサ板と接合し、かつ第1のマスク板の板面外側に第1の補助枠が接合され、該第2のマスク板と第2の補助枠は該スペーサ板上の板面平面で複数個に分割されて配置された構成であることを特徴とする圧電材料の電極形成用蒸着枠である。
【0015】
この場合、スペーサ板を中心にスペーサ板の両側にマスク板と補助枠とを配置する上で、片方のマスク板と補助枠とを予め溶接または接着などで張合わせ一体的な構造にしておくことで、作業性が改善され、補助枠の使用により蒸着枠全体の剛性が増すことから、マスク板の変形を防ぎ均一な張合わせが可能となる。また、マスク板および補助枠を分割することにより1枚あたりのマスク板と圧電素板の密着性が増すことから、蒸着面以外への電極金属材料の飛散を防止できる。
【0016】
以上のように、個別の補助枠とマスク板とスペーサ板をネジ止めなどにより一体化するような接合方法から、スペーサ板と片側のマスク板、補助枠を接合し一枚の平板にすることで、圧電素板を蒸着枠に入れる作業工程を改善するものである。また、マスク板、補助枠を分割することで、マスク板と圧電素板との間の僅かな隙間から電極金属材料が蒸着面以外にも付着するというおそれを改善した圧電材料の電極形成用蒸着枠である。
【0017】
【発明の実施の形態】
以下、添付図面に従ってこの発明の実施例を説明する。なお、各図において同一の符号は同様の対象を示すものとする。
図1は本発明の基本構成となる蒸着枠8を示すものである。金属薄板(例えばステンレス材)からなるスペーサ板3で、エッチング加工などによって電極を形成すべき圧電素板1の外形形状に対応した保持孔10を穿設している。4、5は第1、第2のマスク板でスペーサ板3の両側板面に添設するようにしている。そして第1、第2のマスク板4、5もスペーサ板3と同様の金属薄板からなり、スペーサ板3に形成した各保持孔10に対応して、それぞれ圧電素板1に形成すべき電極形状に対応したマスク板に孔11(電極パターンとなるマスク孔11)を穿設している。このように組み立てられる蒸着枠8に例えば水晶振動子など(図中には丸板状の圧電素板1として描画)を狭設して実際の蒸着作業を行う。なお、図示していないが、スペーサ板3、第1、第2のマスク板4、5はネジにて保持するものである。
【0018】
そして図2に示すように本発明の特徴は、上記の蒸着枠8の該スペーサ板3の少なくとも一方片側に添設する該マスク板(51、52、53、54)および、補助枠(71、72、73、74)が板面平面で複数個に分割された構成にすることにより、圧電素板1を挟持する板面面積を小さくすることで、よりスペーサ板3とマスク板とに生じる隙間を解消し、必要とする電極部以外への蒸着時の電極金属材料の飛散を減らすことを実現できる。また、分割する構成により、蒸着作業時に万一蒸着枠8の一部で圧電素板1がスペーサ板3からズレてしまった場合でも、分割構造によることから他の部分への相乗効果を遮断することもできる。
【0019】
ここで分割構造は、スペーサ板3の少なくとも一方片側に添設するマスク板および、補助枠が板面平面で複数個に分割された構成であれば、本発明の蒸着枠8の効果を向上することができるが、スペーサ板3を中心に見て両方に添設するマスク板(4、5)および、補助枠(6、7)も分割しても良い。なお、図2では4分割として表現しているが、分割数についての制限は無い。
なお、図2についても図示していないが、スペーサ板3、第1、第2のマスク板4、5、第1、第2の補助枠6、7はネジにて保持するものである。
【0020】
なお、上述するスペーサ板3、マクス板、補助枠はステンレス材の金属薄板をエッチングにより加工したものを用いているが、スペーサ板3、マクス板、補助枠についてはステンレス材でもSUS304の非磁性体材質を用いても、SUS430の磁性体材質を用いても影響するものではない。
【0021】
そして、本実施例では、被蒸着物の形状が丸板状の圧電素板1を用いた水晶振動子を用いた例について説明したが、短冊型の圧電素板1に電極を形成する場合にも適用できる。なお、水晶振動子以外の圧電材料による振動子の形態であっても同様の効果を奏することは言うまでもない。
【0022】
【発明の効果】
以上のように、個別の補助枠とマスク板とスペーサ板をネジ止めにより一体化するような接合方法から、スペーサ板および一方のマスク板と補助枠とを接合する形態の蒸着枠のものを使用することにより、圧電素板を蒸着枠に入れる作業工程を改善するものであり、マスク板と圧電素板との間の僅かな隙間から電極金属材料が本来電極として付着すべき圧電素板の表面以外にも付着するというおそれが考えられるが、これらの改善として、蒸着枠のマスク板と補助枠を分割する形態にすることでより密着性のある圧電材料の電極形成用蒸着枠を実現できる。
【図面の簡単な説明】
【図1】本発明の基本形態を示す斜視図である。
【図2】本発明の特徴を説明する斜視図である。
【図3】従来の補助枠を示す斜視図である。
【符号の説明】
1 圧電素板
2 電極
3 スペーサ板
4 第1のマスク板
5 第2のマスク板
6 第1の補助枠
7 第2の補助枠
8 蒸着枠
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an evaporation frame for forming an electrode of a piezoelectric element plate used when forming an excitation electrode on the piezoelectric element plate.
[0002]
[Prior art]
Conventionally, it is generally known to form a piezoelectric vibrator that excites piezoelectric vibration by cutting a piezoelectric material into a plate by cutting it at a predetermined angle and forming an electrode made of a metal thin film on the plate surface by vacuum evaporation or the like. It has been. Such a piezoelectric vibrator is widely used as a reference signal such as a frequency which is a clock signal in many fields of electronic circuits. In particular, crystal resonators that use quartz as the piezoelectric element plate are used in a wide range of fields and products because the crystal material is the best clock signal characteristic of piezoelectric materials, and in recent years crystal oscillators can be manufactured in large quantities at low cost. It has been broken.
[0003]
In the manufacturing process of the crystal unit, when forming the excitation electrode on the piezoelectric element plate, for example, in a vacuum atmosphere, the metal constituting the electrode such as aluminum, silver, or gold is heated to generate metal vapor (so-called vacuum deposition method). The electrode is formed by depositing a metal thin film on the piezoelectric element plate in a vacuum atmosphere. When forming an electrode by such vacuum vapor deposition, vapor deposition is performed by sandwiching a plurality of piezoelectric element plates between vapor deposition frames in order to increase productivity in a vacuum atmosphere.
[0004]
FIG. 3 is a perspective view showing an example of a deposition frame mainly used today, which is composed of an auxiliary frame, a mask plate, and a spacer plate, and corresponds to the outer shape of the piezoelectric element plate on which electrodes are to be formed. A holding hole is formed, and the piezoelectric element plate 4 is disposed in the holding hole. Further, mask holes corresponding to the shapes of the excitation electrodes to be formed on the both side plate surfaces of the piezoelectric element plate 4 are formed in the mask plates. Then, the piezoelectric element plate 4 is arranged in the holding hole of the spacer plate, the mask plate and the auxiliary frame are arranged on both sides thereof, and all of them are joined by screwing to constitute the vapor deposition frame.
[0005]
When sandwiching the piezoelectric element plate 4 in such a vapor deposition frame, it is necessary to apply a clamping force uniformly to each piezoelectric element plate 4 so that the mask plate is brought into close contact with the plate surface of the piezoelectric element plate 4. Therefore, when screwing the entire vapor deposition frame, a large number of screw joint portions are provided at relatively narrow intervals and tightened in the thickness direction (a form in which the plate surfaces are bonded together) to be integrated. In the actual manufacturing process, as the work amount of the daily vapor deposition process, the vapor deposition frame is all separated, the piezoelectric element plate is arranged on the spacer plate, and the mask plate and the auxiliary frame are screwed again, the spacer plate, mask plate, auxiliary The frame is integrated in a single flat plate shape, which is a work process that requires much labor. Further, the vapor deposition apparatus itself has a factor that requires a work time because the vapor deposition operation in one step is a batch process.
[0006]
[Problems to be solved by the invention]
Therefore, in order to improve the conventional working method described above, it was decided to try to improve mainly the vapor deposition process. One of them is a sputtering type vapor deposition method of a conventional vacuum vapor deposition method and another vapor deposition method. The concept of the vapor deposition method will be briefly described below.
[0007]
The vacuum deposition method uses a phenomenon in which an electrode metal material is scattered by heating an electrode metal material (for example, aluminum, silver, gold, etc.) to a deposition object (for example, a piezoelectric element plate such as a crystal material) in a vacuum atmosphere. The electrode metal material is attached to the deposition object.
[0008]
Therefore, generally speaking, the batch processing (refers to one process until the completion of the deposition process, putting the deposition object into the vapor deposition machine and performing the vapor deposition work) is the basic vapor deposition work. It will be an intermittent work that said to do. In addition, since vapor deposition itself requires a high vacuum atmosphere as a condition for heating and scattering the electrode metal material, it also requires time to reach the condition for the actual electrode metal material scattering time, One process of the vapor deposition operation takes time.
[0009]
On the other hand, the sputter deposition method is in the atmosphere of an inert gas such as argon gas or a mixed gas with oxygen, for example, as an electrode metal material. No atmosphere is needed. Further, in this gas atmosphere, the electrode metal material is struck by ions as an ion beam so that the electrode metal material scatters, and the scattered electrode metal material adheres to the deposition object in the same manner as the vacuum evaporation method.
[0010]
Therefore, compared to the vacuum deposition method, the time required to satisfy the deposition environment conditions can be shortened, and further, continuous deposition work can be realized instead of batch processing, improving the efficiency of the deposition work itself. It can be performed.
[0011]
However, in the sputtering deposition method, the electrode metal material is highly likely to be scattered in a small gap between the piezoelectric element plate and the mask plate, so the mask plate and the piezoelectric element plate are more closely adhered than ever before. It is necessary to use a frame.
[0012]
Thus, although the conventional vapor deposition process was able to be improved by improving a vapor deposition method, the subject of scattering prevention of electrode metal materials other than the vapor deposition surface remains by using the above-mentioned vapor deposition frame.
[0013]
[Means for Solving the Problems]
Accordingly, the present invention provides first and second spacer plates in which a plurality of piezoelectric element plates are accommodated and held, and mask holes corresponding to electrode shapes to be formed in units of the piezoelectric element plates accommodated in the spacer plates. It is composed of a mask plate and first and second auxiliary frames , the first mask plate is bonded to the spacer plate, and the first auxiliary frame is bonded to the outside of the plate surface of the first mask plate. The second mask plate and the second auxiliary frame have a structure in which the second mask plate and the second auxiliary frame are divided into a plurality of parts on the plane of the plate on the spacer plate. .
[0015]
In this case, when the mask plate and the auxiliary frame are arranged on both sides of the spacer plate with the spacer plate as the center, one mask plate and the auxiliary frame are previously bonded to each other by welding or bonding so as to have an integrated structure. Thus, the workability is improved, and the rigidity of the entire vapor deposition frame is increased by using the auxiliary frame, so that the mask plate can be prevented from being deformed and uniformly bonded. Moreover, since the adhesion between the mask plate and the piezoelectric element plate per sheet is increased by dividing the mask plate and the auxiliary frame, it is possible to prevent the electrode metal material from scattering to other than the vapor deposition surface.
[0016]
As described above, by joining the individual auxiliary frame, mask plate, and spacer plate by screwing, etc., the spacer plate, mask plate on one side, and auxiliary frame are joined to form a single flat plate. The work process of putting the piezoelectric element plate into the vapor deposition frame is improved. Also, by dividing the mask plate and the auxiliary frame, the electrode material vapor deposition for electrode formation has improved the possibility that the electrode metal material adheres to other than the vapor deposition surface from a slight gap between the mask plate and the piezoelectric element plate. It is a frame.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the accompanying drawings. In each figure, the same numerals indicate the same objects.
FIG. 1 shows a vapor deposition frame 8 which is a basic configuration of the present invention. A spacer plate 3 made of a thin metal plate (for example, stainless steel) is provided with a holding hole 10 corresponding to the outer shape of the piezoelectric element plate 1 on which an electrode is to be formed by etching or the like. Reference numerals 4 and 5 denote first and second mask plates which are attached to both side surfaces of the spacer plate 3. The first and second mask plates 4 and 5 are also made of a thin metal plate similar to the spacer plate 3, and corresponding to the holding holes 10 formed in the spacer plate 3, the electrode shapes to be formed on the piezoelectric element plate 1, respectively. A hole 11 (mask hole 11 serving as an electrode pattern) is formed in a mask plate corresponding to the above. For example, a crystal resonator or the like (drawn as a round plate-like piezoelectric element plate 1 in the drawing) is narrowly provided in the vapor deposition frame 8 assembled in this way, and an actual vapor deposition operation is performed. Although not shown, the spacer plate 3, the first and second mask plates 4, 5 are held by screws.
[0018]
As shown in FIG. 2, the present invention is characterized in that the mask plate (51, 52, 53, 54) attached to at least one side of the spacer plate 3 of the vapor deposition frame 8 and the auxiliary frame (71, 72, 73, 74) is divided into a plurality of planes on the plane of the plate, so that the gap between the spacer plate 3 and the mask plate is further reduced by reducing the plate surface area sandwiching the piezoelectric element plate 1. It is possible to eliminate the scattering of the electrode metal material at the time of vapor deposition other than the necessary electrode part. Moreover, even if the piezoelectric element plate 1 is displaced from the spacer plate 3 by a part of the vapor deposition frame 8 during the vapor deposition operation, the synergistic effect to other parts is cut off due to the divided structure. You can also
[0019]
Here, the divided structure improves the effect of the vapor deposition frame 8 of the present invention as long as the mask plate attached to at least one side of the spacer plate 3 and the auxiliary frame are divided into a plurality of planes on the plate surface. However, the mask plates (4, 5) and the auxiliary frames (6, 7) attached to both of the spacer plates 3 as viewed from the center may be divided. In FIG. 2, it is expressed as four divisions, but there is no restriction on the number of divisions.
Although not shown in FIG. 2, the spacer plate 3, the first and second mask plates 4, 5, and the first and second auxiliary frames 6 and 7 are held by screws.
[0020]
The spacer plate 3, the max plate, and the auxiliary frame described above are made by etching a stainless steel thin metal plate, but the spacer plate 3, the max plate, and the auxiliary frame are made of stainless steel and are made of SUS304. Even if a material is used, there is no influence even if a magnetic material of SUS430 is used.
[0021]
In the present embodiment, an example in which the crystal resonator using the piezoelectric element plate 1 having a round plate shape is described is described. However, when an electrode is formed on the strip-shaped piezoelectric element plate 1. Is also applicable. Needless to say, the same effect can be obtained even in the form of a vibrator made of a piezoelectric material other than the quartz vibrator.
[0022]
【The invention's effect】
As described above, from the joining method in which the individual auxiliary frame, the mask plate, and the spacer plate are integrated by screwing, the spacer plate and the vapor deposition frame in the form of joining one of the mask plate and the auxiliary frame are used. This improves the work process of putting the piezoelectric element plate into the vapor deposition frame, and the surface of the piezoelectric element plate to which the electrode metal material should originally adhere as an electrode from a slight gap between the mask plate and the piezoelectric element plate However, as an improvement to these, a vapor deposition frame for forming an electrode of a piezoelectric material having more adhesiveness can be realized by dividing the mask plate of the vapor deposition frame and the auxiliary frame.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a basic form of the present invention.
FIG. 2 is a perspective view illustrating features of the present invention.
FIG. 3 is a perspective view showing a conventional auxiliary frame.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Piezoelectric element board 2 Electrode 3 Spacer board 4 1st mask board 5 2nd mask board 6 1st auxiliary frame 7 2nd auxiliary frame 8 Evaporation frame

Claims (1)

圧電素板を複数個収納し保持するスペーサ板と、該スペーサ板に収納した該圧電素板単位に形成すべき電極形状に対応するマスク孔を配置した第1と第2のマスク板および、第1と第2の補助枠とで構成され、該第1のマスク板は該スペーサ板と接合し、かつ第1のマスク板の板面外側に第1の補助枠が接合され、該第2のマスク板と第2の補助枠は該スペーサ板上の板面平面で複数個に分割されて配置された構成であることを特徴とする圧電材料の電極形成用蒸着枠。A first and a second mask plate in which a plurality of piezoelectric element plates are accommodated and held, and mask holes corresponding to electrode shapes to be formed in units of the piezoelectric element plates accommodated in the spacer plate are arranged; 1 and a second auxiliary frame, the first mask plate is joined to the spacer plate, and the first auxiliary frame is joined to the outside of the plate surface of the first mask plate, mask plate and the second auxiliary frame for forming an electrode deposition frame of the piezoelectric material, which is a structure which is arranged to be divided into a plurality at the plate surface plane on the spacer plate.
JP2002023926A 2002-01-31 2002-01-31 Deposition frame for electrode formation of piezoelectric material Expired - Fee Related JP4083435B2 (en)

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JP4083435B2 true JP4083435B2 (en) 2008-04-30

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Publication number Priority date Publication date Assignee Title
CN100529170C (en) * 2005-04-22 2009-08-19 鸿富锦精密工业(深圳)有限公司 Base plate holding device
CN108754419B (en) * 2018-08-30 2020-07-10 武汉华星光电半导体显示技术有限公司 Mask assembly and manufacturing method thereof
CN116083842A (en) * 2023-01-03 2023-05-09 京东方科技集团股份有限公司 Mask plate assembly

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