CN111130482A - Processing method of quartz crystal resonator electrode - Google Patents
Processing method of quartz crystal resonator electrode Download PDFInfo
- Publication number
- CN111130482A CN111130482A CN201911230957.4A CN201911230957A CN111130482A CN 111130482 A CN111130482 A CN 111130482A CN 201911230957 A CN201911230957 A CN 201911230957A CN 111130482 A CN111130482 A CN 111130482A
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- China
- Prior art keywords
- quartz crystal
- polymer material
- electrode
- conductive polymer
- crystal resonator
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- 239000010453 quartz Substances 0.000 title claims abstract description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000002861 polymer material Substances 0.000 claims abstract description 34
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a processing method of quartz crystal resonator electrode, which is characterized in that a quartz crystal wafer is placed on a special fixture, a conductive polymer material is made into a conductive polymer material solution, the conductive polymer material solution is covered on the surface of the electrode area to be processed of the quartz crystal wafer to form a coating, the coating is dried and the edge is processed to obtain the quartz crystal resonator electrode, and the quartz crystal resonator electrode has the advantages that: the conductive polymer material is used for replacing a metal electrode, so that the performance of the quartz crystal resonator is improved, the processing is simple, the processing cost of a product is reduced, the weight of the electrode is reduced to the maximum extent, the quality effect is reduced, the coupling of a working mode and an interference mode is obviously weakened, the coupling between the modes is reduced, the vibration energy is concentrated in the working mode as far as possible, the interference of a parasitic mode is reduced, and the performance of the resonator is improved on the premise of meeting the conductive performance of the resonator during working and ensuring that the quartz crystal resonator is excited.
Description
Technical Field
The invention relates to a processing method of a quartz crystal resonator, in particular to a processing method of a quartz crystal resonator electrode.
Background
Quartz crystal resonators are widely used in various types of electronic equipment as key components for frequency control. The inverse piezoelectric effect of the quartz crystal material can be utilized to realize high-frequency mechanical vibration, and further a stable frequency source is provided for the functions of signal selection, information detection and the like. The working state of the resonator is the coupling vibration of a plurality of modes of the quartz crystal plate, if the frequency of other modes (parasitic modes) is close to the main working mode (generally thickness shearing mode), the resistance is increased, the quality factor is reduced, and even frequency and mode jump occurs in serious conditions, so that the resonator can not work stably and efficiently.
The stability and performance of frequency are related to the electrodes of the resonator, and the effective method widely adopted at present is to adopt metal with good conductivity, such as gold, silver or aluminum, as the electrode material as far as possible, limit the thickness of the electrode and use a thinner electrode, thereby ensuring that the rigidity and quality of the electrode have minimum negative influence on the resonator. The commonly used electrode processing method is generally to clean the surface of the quartz crystal, and then to plate a metal chromium-nickel alloy layer on the surface for enhancing the adhesion on the surface of the quartz crystal, and to change the performance and adhesion of the metal electrode, so that the metal layer can be evaporated or sputtered on the surface to complete the processing of the metal electrode. However, since the melting point of metal is generally high, the evaporation and sputtering methods must be performed at a high temperature, so that the quartz wafer may undergo high temperature deformation, and all thermal stress cannot be released due to the high density and rigidity of the metal electrode, which may adversely affect the quartz crystal resonator and change the resonator performance.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for processing the quartz crystal resonator electrode, which is convenient to process, and the processed quartz crystal resonator electrode has excellent performance.
The technical scheme adopted by the invention for solving the technical problems is as follows: a quartz crystal resonator electrode processing method comprises the steps of placing a quartz crystal wafer on a special fixture, making a conductive polymer material into a conductive polymer material solution, covering the conductive polymer material solution on the surface of an electrode area to be processed of the quartz crystal wafer to form a coating, drying the coating, and processing the edge to obtain the quartz crystal resonator electrode.
The special fixture comprises a fixed template and a clamping plate arranged on the fixed template, a rectangular fixed cavity is arranged on the fixed template, a pressing strip and an electrode area hole are formed in the clamping plate, a quartz wafer is embedded into the fixed cavity, the pressing strip is pressed on the quartz wafer, and a high polymer material solution covers the surface of the quartz wafer in the electrode area hole.
The fixed cavity is a through fixed cavity, and the two clamping plates are respectively arranged on two sides of the fixed template.
And four corners of the fixed cavity are provided with circular protection holes. The protection holes are arranged to protect four corners of the quartz wafer from cracking.
The method for covering the surface of the electrode area to be processed of the quartz wafer with the conductive polymer material solution comprises spraying, smearing, surface deposition, sputtering and evaporation deposition.
The specific method of spraying is to uniformly spray the conductive polymer material solution on the designated area of the quartz crystal surface under the action of pressure.
The specific method for coating is to uniformly coat the conductive polymer material solution on the designated area on the surface of the quartz crystal by using a brush.
The specific method of surface deposition is to retain the melted conductive polymer material solution on the designated area of the quartz crystal surface until the melted conductive polymer material solution is solidified to form a film.
The specific method of sputtering is to melt the conductive polymer material to form conductive polymer material slurry, and spray the slurry on the surface of the quartz crystal at high temperature to deposit and form an electrode layer.
The specific method of evaporation deposition is to melt and evaporate the high molecular material and deposit the high molecular material on the designated area of the quartz crystal surface to form an electrode layer.
Compared with the prior art, the invention has the advantages that: the electrode film is processed by using a proper conductive high polymer material to replace a common metal electrode, so that the performance of the quartz crystal resonator is improved, the processing is simple, the processing cost of the product is reduced, and the processing technology of the product is simplified; the conductive polymer material is used for manufacturing the quartz crystal resonator, and the density and the rigidity of the conductive polymer material are small, so that the weight of the electrode can be reduced to the maximum extent, the quality effect can be reduced, the coupling between the working mode and the interference mode can be obviously weakened, the coupling between the modes can be reduced, the vibration energy can be concentrated in the working mode as far as possible, the interference of the parasitic mode can be reduced, and the performance of the resonator can be improved on the premise of meeting the conductive performance of the resonator and ensuring that the quartz crystal resonator is excited.
Drawings
FIG. 1 is a schematic front structural view of an electrode of a quartz crystal resonator processed by the method of the present invention;
FIG. 2 is a schematic side view of a quartz crystal resonator electrode fabricated by the method of the present invention;
FIG. 3 is a schematic perspective view of the special fixture of the present invention;
FIG. 4 is a schematic structural diagram of the special fixture for simultaneously processing multiple quartz crystal resonator electrodes according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The first embodiment is as follows: a quartz crystal resonator electrode processing method is characterized in that a quartz crystal wafer is placed on a special fixture, the special fixture is shown in figure 3 and comprises a middle fixing template 1 and a clamping plate 2 arranged on the fixing template 1, a rectangular fixing cavity 11 is formed in the fixing template 1, the clamping plate 2 is provided with a pressing strip 21 and an electrode area hole 22, the quartz crystal wafer 3 is embedded into the fixing cavity 11, the pressing strip 21 is pressed on the quartz crystal wafer 3, a conductive polymer material is made into a conductive polymer material solution, the conductive polymer material solution covers the electrode area surface to be processed of the quartz crystal wafer 3 in the electrode area hole 22 to form a coating 31 by adopting any one of spraying, smearing, surface deposition, sputtering and evaporation deposition, the coating 31 is dried, and the edge of the coating is processed to obtain the quartz crystal resonator electrode, and the structure of the quartz crystal resonator electrode is shown in figures 1 and 2.
In the above embodiment, circular protection holes (not shown in the figure) may be disposed at four corners of the rectangular fixing cavity 11, four corners of the quartz wafer 3 are located in the protection holes, the fixing cavity may be a transparent fixing cavity, two clamping plates 2 may be disposed on two sides of the fixing template 1, after the electrode on one side of the wafer is processed, the same process is used again, and the other side of the quartz wafer is symmetrically processed, so as to obtain symmetrical conductive polymer material electrodes. The conductive high polymer material film with equal thickness can be processed according to the specification and the requirement of the electrode to be processed; the two clamping plates are respectively arranged on two sides of the fixed template.
If it is desired to process multiple or batch of wafer electrodes simultaneously, the same process as in one embodiment can be performed using a dedicated fixture as shown in FIG. 4.
Claims (10)
1. A processing method of quartz crystal resonator electrode is characterized in that a quartz crystal wafer is placed on a special fixture, conductive polymer material is made into conductive polymer material solution, the conductive polymer material solution covers the surface of an electrode area to be processed of the quartz crystal wafer to form a coating, the coating is dried, and the edge is processed to obtain the quartz crystal resonator electrode.
2. The method as claimed in claim 1, wherein the special fixture comprises a fixing template and a clamping plate disposed on the fixing template, the fixing template is provided with a rectangular fixing cavity, the clamping plate is provided with a pressing strip and an electrode area hole, the quartz wafer is embedded in the fixing cavity, the pressing strip is pressed on the quartz wafer, and the polymer material solution covers the surface of the quartz wafer in the electrode area hole.
3. The method as claimed in claim 2, wherein the fixing cavity is a through fixing cavity, and the two clamping plates are respectively disposed on two sides of the fixing template.
4. A method for processing an electrode of a quartz crystal resonator as claimed in claim 2 or 3, wherein the four corners of the fixed cavity are provided with circular protection holes.
5. The method for processing the quartz crystal resonator electrode as claimed in claim 1, wherein the method for coating the conductive polymer material solution on the surface of the electrode area to be processed of the quartz wafer comprises spraying, painting, surface deposition, sputtering and evaporation deposition.
6. The method for processing the quartz crystal resonator electrode according to claim 5, wherein the spraying is carried out by uniformly spraying a solution of the conductive polymer material on a designated area of the quartz crystal surface under pressure.
7. The method as claimed in claim 5, wherein the step of coating is performed by uniformly coating the solution of conductive polymer material on the designated area of the quartz crystal surface with a brush.
8. The method for processing the quartz crystal resonator electrode as claimed in claim 5, wherein the surface deposition is carried out by keeping the melted conductive polymer material solution on the designated area of the quartz crystal surface until the melted conductive polymer material solution is solidified to form a film.
9. The method as claimed in claim 5, wherein the sputtering is carried out by melting the conductive polymer material to form a slurry, spraying the slurry onto the quartz crystal surface at high temperature to form an electrode layer.
10. The method as claimed in claim 5, wherein the step of evaporation deposition is carried out by melting and evaporating the polymer material to form an electrode layer on the designated area of the quartz crystal surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910941559 | 2019-09-30 | ||
| CN2019109415597 | 2019-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111130482A true CN111130482A (en) | 2020-05-08 |
Family
ID=70497541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911230957.4A Pending CN111130482A (en) | 2019-09-30 | 2019-12-05 | Processing method of quartz crystal resonator electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111130482A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114531127A (en) * | 2022-02-21 | 2022-05-24 | 浙江蓝晶芯微电子有限公司 | Moving coating process for quartz crystal resonator with drying mechanism |
| CN116346078A (en) * | 2023-05-31 | 2023-06-27 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09181547A (en) * | 1995-12-25 | 1997-07-11 | Matsushita Electric Ind Co Ltd | Frequency adjusting method for crystal resonator and adjusting jig therefor |
| KR100557316B1 (en) * | 2005-03-04 | 2006-03-06 | 센티스 주식회사 | Electro active polymer based bulk acoustic resonator |
| CN201414116Y (en) * | 2009-05-11 | 2010-02-24 | 金华市创捷电子有限公司 | Silver-coated electrode of quartz crystal resonator |
| CN204031083U (en) * | 2014-07-28 | 2014-12-17 | 广东惠伦晶体科技股份有限公司 | A kind of quartz-crystal resonator wafer coating clamp |
-
2019
- 2019-12-05 CN CN201911230957.4A patent/CN111130482A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09181547A (en) * | 1995-12-25 | 1997-07-11 | Matsushita Electric Ind Co Ltd | Frequency adjusting method for crystal resonator and adjusting jig therefor |
| KR100557316B1 (en) * | 2005-03-04 | 2006-03-06 | 센티스 주식회사 | Electro active polymer based bulk acoustic resonator |
| CN201414116Y (en) * | 2009-05-11 | 2010-02-24 | 金华市创捷电子有限公司 | Silver-coated electrode of quartz crystal resonator |
| CN204031083U (en) * | 2014-07-28 | 2014-12-17 | 广东惠伦晶体科技股份有限公司 | A kind of quartz-crystal resonator wafer coating clamp |
Non-Patent Citations (1)
| Title |
|---|
| 武汉市仪器仪表研究所情报室编辑: "普通高等教育十二五规划教材 功能复合材料", 普通高等教育十二五规划教材 功能复合材料，冶金工业出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114531127A (en) * | 2022-02-21 | 2022-05-24 | 浙江蓝晶芯微电子有限公司 | Moving coating process for quartz crystal resonator with drying mechanism |
| CN116346078A (en) * | 2023-05-31 | 2023-06-27 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
| CN116346078B (en) * | 2023-05-31 | 2023-08-01 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
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