JP4063689B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4063689B2
JP4063689B2 JP2003041345A JP2003041345A JP4063689B2 JP 4063689 B2 JP4063689 B2 JP 4063689B2 JP 2003041345 A JP2003041345 A JP 2003041345A JP 2003041345 A JP2003041345 A JP 2003041345A JP 4063689 B2 JP4063689 B2 JP 4063689B2
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JP
Japan
Prior art keywords
temperature
electrode
semiconductor wafer
electrode block
refrigerant
Prior art date
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Expired - Lifetime
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JP2003041345A
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English (en)
Japanese (ja)
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JP2003243380A (ja
JP2003243380A5 (enrdf_load_stackoverflow
Inventor
雅嗣 荒井
竜二郎 有働
直行 田村
▲匡▼規 角谷
元彦 吉開
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Hitachi Ltd
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi Ltd
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Priority to JP2003041345A priority Critical patent/JP4063689B2/ja
Publication of JP2003243380A publication Critical patent/JP2003243380A/ja
Publication of JP2003243380A5 publication Critical patent/JP2003243380A5/ja
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Publication of JP4063689B2 publication Critical patent/JP4063689B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2003041345A 2003-02-19 2003-02-19 プラズマ処理装置 Expired - Lifetime JP4063689B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003041345A JP4063689B2 (ja) 2003-02-19 2003-02-19 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003041345A JP4063689B2 (ja) 2003-02-19 2003-02-19 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002038915A Division JP3742349B2 (ja) 2002-02-15 2002-02-15 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2003243380A JP2003243380A (ja) 2003-08-29
JP2003243380A5 JP2003243380A5 (enrdf_load_stackoverflow) 2005-08-11
JP4063689B2 true JP4063689B2 (ja) 2008-03-19

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ID=27785802

Family Applications (1)

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JP2003041345A Expired - Lifetime JP4063689B2 (ja) 2003-02-19 2003-02-19 プラズマ処理装置

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JP (1) JP4063689B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1801861B1 (en) * 2004-07-09 2012-10-03 Sekisui Chemical Co., Ltd. Method and device for treating outer periphery of a substrate
JP4539245B2 (ja) * 2004-09-06 2010-09-08 横浜ゴム株式会社 樹脂集積配管およびその製造方法
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP7450348B2 (ja) * 2018-11-15 2024-03-15 東京エレクトロン株式会社 真空処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08191059A (ja) * 1995-01-09 1996-07-23 Hitachi Ltd プラズマ処理装置
JPH0917770A (ja) * 1995-06-28 1997-01-17 Sony Corp プラズマ処理方法およびこれに用いるプラズマ装置
JPH09167794A (ja) * 1995-12-15 1997-06-24 Sony Corp 静電チャックおよびプラズマ処理方法
JPH1154482A (ja) * 1997-08-05 1999-02-26 Hitachi Ltd 半導体装置の製造方法および装置ならびにワークの処理方法
JP4067633B2 (ja) * 1998-03-06 2008-03-26 東京エレクトロン株式会社 処理装置
JPH11260803A (ja) * 1998-03-13 1999-09-24 Hitachi Ltd ウェハ温度の制御方法
JPH11307513A (ja) * 1998-04-20 1999-11-05 Sony Corp 絶縁体基板対応プラズマ処理装置
JP2000216140A (ja) * 1999-01-20 2000-08-04 Hitachi Ltd ウエハステ―ジおよびウエハ処理装置
EP1098354A2 (en) * 1999-11-08 2001-05-09 Applied Materials, Inc. Apparatus for controlling temperature in a semiconductor processing system

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Publication number Publication date
JP2003243380A (ja) 2003-08-29

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