JP4062913B2

JP4062913B2 - Wafer transfer device

Info

Publication number: JP4062913B2
Application number: JP2001371571A
Authority: JP
Inventors: 博之戸梶
Original assignee: Sumco Corp
Current assignee: Sumco Corp
Priority date: 2001-12-05
Filing date: 2001-12-05
Publication date: 2008-03-19
Anticipated expiration: 2021-12-05
Also published as: JP2003174069A

Abstract

<P>PROBLEM TO BE SOLVED: To shorten the working time of inch conversion work for implanting ions into wafers having different outside diameter by eliminating the work for replacing an arm wafer receiver. <P>SOLUTION: First arm wafer receivers 26 and 27 are provided, respectively, with a plurality of carry-in side recesses 26a, 27a, 26b and 27b capable of containing a plurality of kinds of wafer 11 of different diameter and having inside diameters corresponding to the outside diameter of these wafers. Second arm wafer susceptor 28 and 29 are provided, respectively, with a plurality of carry-out side recesses 28a, 29a, 28b and 29b capable of containing a plurality of kinds of wafer of different diameter and having inside diameters corresponding to the outside diameter of these wafers. Bottom face of the plurality of carry-in side recesses is formed to become lower sequentially stepwise from the outside toward the inside and the bottom face of the plurality of carry-out side recesses is formed to become lower sequentially stepwise from the outside toward the inside. <P>COPYRIGHT: (C)2003,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、中電流イオン注入装置にウェーハを搬送するのに適したウェーハ搬送装置に関するものである。
【０００２】
【従来の技術】
従来、チャンバ内外に通じるエアロック室がウェーハを固定保持するプラテンによりチャンバ内側から開閉され、このプラテンがプラテン駆動機構によりエアロック室を閉止する位置とウェーハを処理する位置との間で回動するように構成された真空チャンバが開示されている（特開平７−１９３４０号）。この真空チャンバでは、エアロック室のチャンバ外側がエアロック扉により開閉される。これにより少なくともエアロック扉又はプラテンのいずれか一方が閉止され、チャンバ内部が大気に開放されないように構成される。またエアロック扉はウェーハを載置した状態で保持する３個のウェーハガイドを有し、プラテンは静電チャックによりウェーハを保持するように構成される。
【０００３】
このように構成された真空チャンバでは、先ずエアロック室がプラテンによりチャンバ内側から閉止された状態で、エアロック室の下方でウェーハがエアロック扉のウェーハガイド上に載置され、その後エアロック扉が上昇してエアロック室がエアロック扉によりチャンバ外側から閉止される。次にエアロック室から空気が排出されて、静電チャックが作動してプラテンがウェーハを吸引固定する。更にプラテンがプラテン駆動手段により駆動されて垂直に立上がり、この状態でウェーハにイオン注入される。このようにプラテンがウェーハの搬送を行うので、プラテンによりウェーハの固定保持が確実に行われ、搬送中にウェーハからパーティクル等が発生することがない。この結果、真空チャンバ内部の汚染を抑制できるようになっている。
【０００４】
【発明が解決しようとする課題】
上記従来の特開平７−１９３４０号公報に示された真空チャンバでは、外径の異なる複数種類のウェーハをそれぞれ載置するときには、これらのウェーハの外径に対応する複数種類のウェーハガイドを用意しておく。そして外径の異なるウェーハにイオン注入する場合には、ウェーハガイドをそのウェーハの外径に対応するものに交換しなければならない。このため、外径の異なるウェーハにイオン注入すべく装置を切換える作業時間、即ちインチコンバージョン作業時間が増大する不具合があった。
本発明の目的は、外径の異なるウェーハにイオン注入するためのインチコンバージョン作業時に、アーム用ウェーハ受け、プラテン用ウェーハ受け及びエアロック室用ウェーハ受けの交換作業を不要にすることにより、インチコンバージョン作業時間を短縮できる、ウェーハ搬送装置を提供することにある。
【０００５】
【課題を解決するための手段】
請求項１に係る発明は、図１及び図６に示すように、ウェーハ１１，１２を載せるための間隔をあけた一対の第１アーム用ウェーハ受け２６，２７を有し第１エアロック室用ウェーハ受け１４にて保持されたウェーハ１１，１２をイオン注入するためのプラテン１６に搬送する第１アーム１８と、ウェーハ１１，１２を載せるための間隔をあけた一対の第２アーム用ウェーハ受け２８，２９を有しプラテン１６にて保持されたウェーハ１１，１２を第２エアロック室用ウェーハ受け１７に搬送する第２アーム１９とを備えたウェーハ搬送装置の改良である。
その特徴ある構成は、間隔をあけた一対の第１アーム用ウェーハ受け２６，２７に直径の異なる複数種類のウェーハ１１，１２を収容可能であってかつ複数種類のウェーハ１１，１２の外径に相応する内径を有する複数の搬入側凹部２６ａ，２７ａ，２６ｂ，２７ｂがそれぞれ形成され、間隔をあけた一対の第２アーム用ウェーハ受け２８，２９に直径の異なる複数種類のウェーハ１１，１２を収容可能であってかつ複数種類のウェーハ１１，１２の外径に相応する内径を有する複数の搬出側凹部２８ａ，２９ａ，２８ｂ，２９ｂがそれぞれ形成され、複数の搬入側凹部２６ａ，２７ａ，２６ｂ，２７ｂの底面が外側から内側に向うに従って順次段階的に低くなるように形成され、複数の搬出側凹部２８ａ，２９ａ，２８ｂ，２９ｂの底面が外側から内側に向うに従って順次段階的に低くなるように形成され、プラテン１６が、鉛直方向に延びるプラテン用支軸に固着されこのプラテン用支軸とともに回転可能かつ昇降可能なプラテン用円板１６ａと、このプラテン用円板１６ａの上面にその中心から放射状に延びかつ上方に突設された板状の３枚のプラテン用ウェーハ受け１６ｂとを有し、３枚のプラテン用ウェーハ受け１６ｂに直径の異なる複数種類のウェーハ１１，１２を収容可能であってかつ複数種類のウェーハ１１，１２の外径に相応する内径を有する複数のプラテン用凹部１６ｃ，１６ｄがそれぞれ形成され、複数のプラテン用凹部１６ｃ，１６ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成され、３枚のプラテン用ウェーハ受け１６ｂのうち２枚のプラテン用ウェーハ受け１６ｂが互いに近接して設けられ、残りの１枚のプラテン用ウェーハ受け１６ｂがプラテン用支軸を中心にして上記２枚のプラテン用ウェーハ受け１６ｂに対向するように設けられ、一対の第１アーム用ウェーハ受け２６，２７の間隔は、第１アーム１８の先端部が第１エアロック室用ウェーハ受け１４の上方に到来したときに第１エアロック室用ウェーハ受け１４に形成された第１凸部１４ｂに遊嵌可能な間隔であって、しかも第１アーム１８の先端部がプラテン１６の上方に到来したときに３枚のプラテン用ウェーハ受け１６ｂに遊嵌可能な間隔であり、一対の第２アーム用ウェーハ受け２８，２９の間隔は、第２アーム１９の先端部がプラテン１６の上方に到来したときに３枚のプラテン用ウェーハ受け１６ｂに遊嵌可能な間隔であって、しかも第２アーム１９の先端部が第２エアロック室用ウェーハ受け１７の上方に到来したときに第２エアロック室用ウェーハ受け１７に形成された第２凸部１７ｂに遊嵌可能な間隔であるところにある。
【０００６】
この請求項１に記載されたウェーハ搬送装置では、所定の外径を有するウェーハ１１へのイオン注入作業から、外径の異なるウェーハ１２へのイオン注入作業に変換するためのインチコンバージョン作業において、比較的煩わしい作業である第１アーム用ウェーハ受け２６，２７及び第２アーム用ウェーハ受け２８，２９の交換を不要にできるので、インチコンバージョン作業時間を短縮できる。このため外径の異なるウェーハ１２に速やかにイオン注入できる。
【０００７】
また上記第１アーム用ウェーハ受け２６，２７及び第２アーム用ウェーハ受け２８，２９の交換を不要にできるとともに、プラテン用ウェーハ受け１６ｂの交換も不要にできるので、更にインチコンバージョン作業時間を短縮できる。
【０００８】
請求項２に係る発明は、請求項１に係る発明であって、更に図１及び図１０に示すように、第１エアロック室用ウェーハ受け１４に直径の異なる複数種類のウェーハ１１，１２を収容可能であってかつ複数種類のウェーハ１１，１２の外径に相応する内径を有する複数の第１エアロック室用凹部１４ｃ，１４ｄがそれぞれ形成され、第２エアロック室用ウェーハ受け１７に直径の異なる複数種類のウェーハ１１，１２を収容可能であってかつ複数種類のウェーハ１１，１２の外径に相応する内径を有する複数の第２エアロック室用凹部１７ｃ，１７ｄがそれぞれ形成され、複数の第１エアロック室用凹部１４ｃ，１４ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成され、複数の第２エアロック室用凹部１７ｃ，１７ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成されたことを特徴とする。
この請求項２に記載されたウェーハ搬送装置では、上記第１アーム用ウェーハ受け２６，２７、第２アーム用ウェーハ受け２８，２９及びプラテン用ウェーハ受け１６ｂの交換を不要にできるとともに、第１エアロック室用ウェーハ受け１４及び第２エアロック室用ウェーハ受け１７の交換も不要にできるので、更にインチコンバージョン作業時間を短縮できる。
【０００９】
【発明の実施の形態】
次に本発明の実施の形態を図面に基づいて説明する。
図１及び図６〜図８に示すように、ウェーハ搬送装置１０は、ウェーハ１１，１２にイオン注入するために設けられた真空のエンドステーション１３と、エンドステーション１３に隣接してそれぞれ設けられた第１及び第２エアロック室と、ウェーハ１１，１２を大気中から第１エアロック室内を通ってエンドステーション１３内に搬入する第１エアロック室用ウェーハ受け１４と、ウェーハ１１，１２をエンドステーション１３内から第２エアロック室内を通って大気中に搬出する第２エアロック室用ウェーハ受け１７と、エンドステーション１３内に到来した第１エアロック室用ウェーハ受け１４及びエンドステーション１３内に到来した第２エアロック室用ウェーハ受け１７からそれぞれ所定の間隔をあけてエンドステーション１３内に設けられたプラテン１６とを備える。
【００１０】
ウェーハ１１，１２に注入されるイオンはボロン（Ｂ）、リン（Ｐ）又はヒ素（Ａｓ）であり、イオン注入装置（図示せず）はビーム電流量の最大値が０．５ｍＡ以上５ｍＡ未満の中電流イオン注入装置である。このイオン注入装置は、外径１５０ｍｍの第１ウェーハ１１と、外径１００ｍｍの第２ウェーハ１２にイオン注入可能に構成される。
【００１１】
第１エアロック室は、図示しないがエンドステーション１３への連通又は大気への連通のいずれかに切換え可能であって、ウェーハ１１，１２をエンドステーション１３に搬入するために設けられる。即ち、第１エアロック室は大気圧と真空を切換えることにより、エンドステーション１３の真空を破壊することなく、ウェーハ１１，１２を大気中から真空のエンドステーション１３内へ搬入するための機構である。また第２エアロック室は、図示しないがエンドステーション１３への連通又は大気への連通のいずれかに切換え可能であって、ウェーハ１１，１２をエンドステーション１３から搬出するために設けられる。即ち、第２エアロック室は大気圧と真空を切換えることにより、エンドステーション１３の真空を破壊することなく、ウェーハ１１，１２を真空のエンドステーション１３内から大気中へ搬出するための機構である。
【００１２】
プラテン１６は鉛直方向に延びるプラテン用支軸（図示せず）に固着されプラテン用支軸とともに回転可能かつ昇降可能なプラテン用円板１６ａと、このプラテン用円板１６ａの上面にその中心から放射状に延びかつ上方に突設された３枚のプラテン用ウェーハ受け１６ｂとを有する（図１、図７及び図１２）。３枚のプラテン用ウェーハ受け１６ｂのうち、２枚のプラテン用ウェーハ受け１６ｂは互いに近接して設けられ、残りの１枚のプラテン用ウェーハ受け１６ｂはプラテン用支軸を中心にして上記２枚のプラテン用ウェーハ受け１６ｂに対向するように設けられる。ウェーハ１１，１２は後述する第１アーム１８により第１エアロック室用ウェーハ受け１４からプラテン１６に搬送されて３枚のプラテン用ウェーハ受け１６ｂの上面に載ることにより、プラテン１６にて保持される。またプラテン１６が上昇することにより、ウェーハ１１，１２はイオン注入装置のイオン注入位置（図示せず）に移動するように構成される。
【００１３】
また第１エアロック室用ウェーハ受け１４は、鉛直方向に延びる第１支軸（図示せず）に固着されかつ第１支軸ととも回転可能な第１円板１４ａと、この第１円板１４ａの上面に略Ｕ字状に形成された第１凸部１４ｂとを有する（図１及び図６）。ウェーハ１１，１２は、エンドステーション１３内の第１エアロック室用ウェーハ受け１４に搬入されて第１凸部１４ｂの上面に載ることにより、第１エアロック室用ウェーハ受け１４にて保持される。
【００１４】
更に第２エアロック室用ウェーハ受け１７は、鉛直方向に延びる第２支軸（図示せず）に固着されかつ第２支軸ととも回転可能な第２円板１７ａと、この第２円板１７ａの上面に略Ｕ字状に形成された第２凸部１７ｂとを有する（図１及び図１０）。ウェーハ１１，１２は、後述する第２アーム１９によりプラテン１６から第２エアロック室用ウェーハ受け１７に搬送されてウェーハ１１，１２が第２凸部１７ｂの上面に載ることにより、第２エアロック室用ウェーハ受け１７にて保持される。
【００１５】
一方、エンドステーション１３には、第１エアロック室用ウェーハ受け１４により保持されたウェーハ１１，１２をプラテン１６に搬送する第１アーム１８が設けられる。この第１アーム１８は、第１エアロック室用ウェーハ受け１４とプラテン１６との間のエンドステーション１３に回動可能かつ昇降可能に立設された第１アーム用支軸２１と、基端がこの第１アーム用支軸２１に嵌着された第１アーム１８とを有する（図１）。
【００１６】
第１アーム１８の先端部にはウェーハ１１，１２を載せるための一対の第１アーム用ウェーハ受け２６，２７が取付けられる（図１及び図６）。一対の第１アーム用ウェーハ受け２６，２７は第１アーム１８の下面にその長手方向に所定の間隔をあけてそれぞれ取付けられる（図１及び図６）。また一対の第１アーム用ウェーハ受け２６，２７には直径の異なる第１及び第２ウェーハ１１，１２を収容可能であってかつこれらのウェーハ１１，１２の外径に相応する内径、即ち第１及び第２ウェーハ１１，１２の外径より僅かに大きな内径を有する外側第１凹部２６ａ，２７ａ及び内側第１凹部２６ｂ，２７ｂがそれぞれ形成される。外側第１凹部２６ａ，２７ａの内径は第１ウェーハ１１の外径より２〜３ｍｍ大きく形成され、内側第１凹部２６ｂ，２７ｂの内径は第２ウェーハ１２の外径より２〜３ｍｍ大きく形成されることが好ましい。更に外側第１凹部２６ａ，２７ａ及び内側第１凹部２６ｂ，２７ｂの底面は外側から内側に向うに従って順次段階的に低くなるように形成される。即ち、内側第１凹部２６ｂ，２７ｂの底面は外側第１凹部２６ａ，２７ａの底面より低く形成される。
【００１７】
またエンドステーション１３には、プラテン１６により保持されたウェーハ１１，１２を第２エアロック室用ウェーハ受け１７に搬送する第２アーム１９が設けられる。この第２アーム１９は、プラテン１６と第２エアロック室用ウェーハ受け１７との間のエンドステーション１３に回動可能かつ昇降可能に立設された第２アーム用支軸２３と、基端がこの第２アーム用支軸２３に嵌着された第２アーム１９とを有する。
【００１８】
第２アーム１９の先端部にはウェーハ１１，１２を載せるための一対の第２アーム用ウェーハ受け２８，２９が取付けられる（図１及び図１０）。一対の第２アーム用ウェーハ受け２８，２９には直径の異なる第１及び第２ウェーハ１１，１２を収容可能であってかつこれらのウェーハ１１，１２の外径に相応する内径、即ち第１及び第２ウェーハ１１，１２の外径より僅かに大きな内径を有する外側第２凹部２８ａ，２９ａ及び内側第２凹部２８ｂ，２９ｂがそれぞれ形成される。外側第２凹部２８ａ，２９ｂの内径は第１ウェーハ１１の外径より２〜３ｍｍ大きく形成され、内側第２凹部２８ｂ，２９ｂの内径は第２ウェーハ１２の外径より２〜３ｍｍ大きく形成されることが好ましい。更に外側第２凹部２８ａ，２９ａ及び内側第２凹部２８ｂ，２９ｂの底面は外側から内側に向うに従って順次段階的に低くなるように形成される。即ち、内側第２凹部２８ｂ，２９ｂの底面は外側第２凹部２８ａ，２９ａの底面より低く形成される。
【００１９】
なお一対の第１アーム用ウェーハ受け２６，２７の間隔は、第１アーム１８の先端部が第１エアロック室用ウェーハ受け１４の上方に到来したときに第１凸部１４ｂに遊嵌可能な間隔であって、しかも第１アーム１８の先端部がプラテン１６の上方に到来したときに３枚のプラテン用ウェーハ受け１６ｂに遊嵌可能な間隔である（図１、図６及び図７）。また一対の第２アーム用ウェーハ受け２８，２９の間隔は、第２アーム１９の先端部がプラテン１６の上方に到来したときに３枚のプラテン用ウェーハ受け１６ｂに遊嵌可能な間隔であって、しかも第２アーム１９の先端部が第２エアロック室用ウェーハ受け１７の上方に到来したときに第２凸部１７ｂに遊嵌可能な間隔である（図１、図８及び図１０）。
【００２０】
一方、３枚のプラテン用ウェーハ受け１６ｂには、直径の異なる第１及び第２ウェーハ１１，１２を収容可能であってかつこれらのウェーハ１１，１２の外径に相応する内径、即ち第１及び第２ウェーハ１１，１２の外径より僅かに大きな内径を有する外側プラテン用凹部１６ｃ及び内側プラテン用凹部１６ｄがそれぞれ形成される（図２、図５、図７、図１１及び図１２）。外側プラテン用凹部１６ｃの内径は第１ウェーハ１１の外径より２〜３ｍｍ大きく形成され、内側プラテン用凹部１６ｄの内径は第２ウェーハ１２の外径より２〜３ｍｍ大きく形成されることが好ましい。更に外側プラテン用凹部１６ｃ及び内側プラテン用凹部１６ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成される。即ち、内側プラテン用凹部１６ｄの底面は外側プラテン用凹部１６ｃの底面より低く形成される。
【００２１】
また第１エアロック室用ウェーハ受け１４の第１凸部１４ｂには、直径の異なる第１及び第２ウェーハ１１，１２を収容可能であってかつこれらのウェーハ１１，１２の外径に相応する内径、即ち第１及び第２ウェーハ１１，１２の外径より僅かに大きな内径を有する外側第１エアロック用凹部１４ｃ及び内側第１エアロック室用凹部１４ｄがそれぞれ形成される。外側第１エアロック室用凹部１４ｃの内径は第１ウェーハ１１の外径より２〜３ｍｍ大きく形成され、内側第１エアロック室用凹部１４ｄの内径は第２ウェーハ１２の外径より２〜３ｍｍ大きく形成されることが好ましい。更に外側第１エアロック室用凹部１４ｃ及び内側第１エアロック室用凹部１４ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成される。即ち、内側第１エアロック室用凹部１４ｄの底面は外側第１エアロック室用凹部１４ｄの底面より低く形成される。
【００２２】
更に第２エアロック室用ウェーハ受け１７の第２凸部１７ｂには、直径の異なる第１及び第２ウェーハ１１，１２を収容可能であってかつこれらのウェーハ１１，１２の外径に相応する内径、即ち第１及び第２ウェーハ１１，１２の外径より僅かに大きな内径を有する外側第２エアロック用凹部１７ｃ及び内側第２エアロック室用凹部１７ｄがそれぞれ形成される。外側第２エアロック室用凹部１７ｃの内径は第１ウェーハ１１の外径より２〜３ｍｍ大きく形成され、内側第２エアロック室用凹部１７ｄの内径は第２ウェーハ１２の外径より２〜３ｍｍ大きく形成されることが好ましい。更に外側第２エアロック室用凹部１７ｃ及び内側第２エアロック室用凹部１７ｄの底面は外側から内側に向うに従って順次段階的に低くなるように形成される。即ち、内側第２エアロック室用凹部１７ｄの底面は外側第２エアロック室用凹部１７ｄの底面より低く形成される。
【００２３】
このように構成されたウェーハ搬送装置１０の動作を図１〜図１２に基づいて説明する。
先ず第１エアロック室用ウェーハ受け１４を第１エアロック室内に位置させ、第１エアロック室を大気に開放した状態で、外径１５０ｍｍの第１ウェーハ１１を第１エアロック室用ウェーハ受け１４の外側第１エアロック室用凹部１４ｃに載る。この状態で第１エアロック室から空気を排出して真空にした後に、第１エアロック室用ウェーハ受け１４をエンドステーション１３内に移動する。次いで第１アーム１８を第１アーム用支軸２１を中心に回転させ、その先端部を第１エアロック室用ウェーハ受け１４の上方に位置させる（図１及び図６（ａ））。このとき一対の第１アーム用ウェーハ受け２６，２７が第１凸部１４ｂを挟むように第１凸部１４ｂに遊嵌されるとともに、第１円板１４ａ及び第１ウェーハ１１間に遊挿される。
【００２４】
この状態で第１アーム１８を図６（ａ）の破線矢印で示す方向に上昇させると、第１ウェーハ１１は一対の第１アーム用ウェーハ受け２６，２７の外側第１凹部２６ａ，２７ａに載るとともに、第１エアロック室用ウェーハ受け１４から離脱する。次いで第１アーム１８を図１の実線矢印で示す方向に回転させ、その先端部をプラテン１６の上方に位置させた後に（図２及び図７（ａ））、第１アーム１８を図７（ａ）の破線矢印で示す方向に下降させると、第１ウェーハ１１は３枚のプラテン用ウェーハ受け１６ｂの外側プラテン用凹部１６ｃに載るとともに、一対の第１アーム用ウェーハ受け２６，２７から離脱する。
【００２５】
次に第１アーム１８を図２の実線矢印で示す方向に回転させ、その先端部を第１エアロック室用ウェーハ受け１４及びプラテン１６の中間位置に停止させる（図３）。この状態でプラテン用円板１６ａを上昇させて第１ウェーハ１１をイオン注入装置のイオン注入位置に搬送し、第１ウェーハ１１にイオン注入する。イオン注入終了後、プラテン用円板１６ａを第１ウェーハ１１とともに下降させた後に、第２アーム１９を図３の実線矢印で示す方向に回転させ、その先端部をプラテン１６の上方に位置させる（図４及び図８（ａ））。
【００２６】
このとき一対の第２アーム用ウェーハ受け２８，２９が、３枚のプラテン用ウェーハ受け１６ｂを挟むようにこれらのプラテン用ウェーハ受け１６ｂに遊嵌されるとともに、プラテン用円板１６ａ及び第１ウェーハ１１間に遊挿される。この状態で第２アーム１９を図８（ａ）の破線矢印で示す方向に上昇させると、第１ウェーハ１１は一対の第２アーム用ウェーハ受け２８，２９の外側第２凹部２８ａ，２９ａに載るとともに、プラテン用ウェーハ受け１６ｂから離脱する。更に第２アーム１９を図４の実線矢印で示す方向に回転させ、その先端部を第２エアロック室用ウェーハ受け１７の上方に位置させた後に（図５及び図１０（ａ））、第２アーム１９を図１０（ａ）の破線矢印で示す方向に下降させると、第１ウェーハ１１は外側第２エアロック室用凹部１７ｃに載るとともに、一対の第２アーム用ウェーハ受け２８，２９から離脱する。その後、第１ウェーハ１１は第２エアロック室用ウェーハ受け１７により真空の第２エアロック室内に搬送され、更に第２エアロック室が大気に開放された後にエアロック室外に搬出される。
【００２７】
一方、外径の異なるウェーハにイオン注入するとき、例えば直径１５０ｍｍの第１ウェーハ１１に替えて直径１００ｍｍの第２ウェーハ１２にイオン注入するときには、最後の第１ウェーハ１１をプラテン１６に搬送してこの第１ウェーハ１１へのイオン注入が終了した後に、イオン注入装置のウエハクランパやウエハアライメントカップ等を交換するという比較的簡単な作業を行うだけで、第２ウェーハ１２にイオン注入できる。換言すれば、第１アーム用ウェーハ受け２６，２７、第２アーム用ウェーハ受け２８，２９、プラテン用ウェーハ受け１６ｂ、第１エアロック室用ウェーハ受け１４及び第２エアロック室用ウェーハ受け１７を交換するという比較的煩わしい作業を行わずに済むので、インチコンバージョン作業時間を短縮でき、これにより第２ウェーハ１２をウェーハ搬送装置１０により速やかにイオン注入装置へ搬送してイオン注入できる。
【００２８】
上記インチコンバージョン作業終了後の第２ウェーハ１２のウェーハ搬送装置１０による搬送手順を次に示す。
先ず、第２ウェーハ１２を大気中から第１エアロック室を通ってエンドステーション１３内に搬入して第１エアロック室用ウェーハ受け１４の第１エアロック室用凹部１４ｄに載る（図２及び図３）。この状態で第１アーム１８を図３の破線矢印で示す方向に回転させ、その先端部を第１エアロック室用ウェーハ受け１４の上方に位置させる（図４）。このとき一対の第１アーム用ウェーハ受け２６，２７が、第１凸部１４ｂを挟むように第１凸部１４ｂに遊嵌されるとともに、第１円板１４ａ及び第２ウェーハ１２間に遊挿される。この状態で第１アーム１８を上昇させると、第２ウェーハ１２は一対の第１アーム用ウェーハ受け２６，２７の内側第１凹部２６ｂ，２７ｂに載るとともに、第１エアロック室用ウェーハ受け１４から離脱する。次いで第１アーム１８を図４の破線矢印で示す方向に回転させ、その先端部をプラテン１６の上方に位置させた後に（図５及び図９（ａ））、第１アーム１８を図９（ａ）の破線矢印で示す方向に下降させると、第２ウェーハ１２は３枚のプラテン用ウェーハ受け１６ｂの内側プラテン用凹部１６ｄに載るとともに、一対の第１アーム用ウェーハ受け２６，２７から離脱する。
【００２９】
次に第１アーム１８を図５の破線矢印で示す方向に回転させ、その先端部を第１エアロック室用ウェーハ受け１４及びプラテン１６の中間位置に停止させる。この状態でプラテン用円板１６ａを上昇させて第２ウェーハ１２をイオン注入装置のイオン注入位置に搬送し、第２ウェーハ１２にイオン注入する。イオン注入終了後、プラテン用円板１６ａを第２ウェーハ１２とともに下降させた後に、第２アーム１９を図５の実線矢印で示す方向に回転させ、その先端部をプラテン１６の上方に位置させる。このとき一対の第２アーム用ウェーハ受け２８，２９が３枚のプラテン用ウェーハ受け１６ｂを挟むようにこれらのプラテン用ウェーハ受け１６ｂに遊嵌されるとともに、プラテン用円板１６ａ及び第２ウェーハ１２間に遊挿される。この状態で第２アーム１９を上昇させると、第２ウェーハ１２は一対の第２アーム用ウェーハ受け２８，２９の内側第２凹部２８ｂ，２９ｂに載るとともに、プラテン用ウェーハ受け１６ｂから離脱する。更に第２アーム１９を回転させてその先端部を第２エアロック室用ウェーハ受け１７の上方に位置させた後に、第２アーム１９を下降させると、第２ウェーハ１２は内側第２エアロック室用凹部１７ｄに載るとともに、一対の第２アーム用ウェーハ受け２８，２９から離脱する。その後、第２ウェーハ１２は第２エアロック室用ウェーハ受け１７により真空の第２エアロック室内に搬送され、更に第２エアロック室が大気に開放された後にエアロック室外に搬出される。
【００３０】
なお、この実施の形態では、外径の異なる複数種類のウェーハとして、外径１５０ｍｍと外径１００ｍｍの２種類のウェーハを挙げたが、外径１２５ｍｍと外径１００ｍｍの２種類のウェーハでもよく、又は外径１５０ｍｍと外径１２５ｍｍと外径１００ｍｍの３種類のウェーハでもよく、或いは上記以外の外径のウェーハを２種類又は３種類以上組合せたものでもよい。これらの場合、第１凹部、第２凹部、プラテン用凹部、第１エアロック室用凹部及び第２エアロック室用凹部は上記ウェーハの外径に合せて、第１アーム用ウェーハ受け、第２アーム用ウェーハ受け、プラテン、第１エアロック室用ウェーハ受け及び第２エアロック室用ウェーハ受けにそれぞれ複数形成される。
【００３１】
【発明の効果】
以上述べたように、本発明によれば、第１アーム用ウェーハ受けに複数種類のウェーハの外径に相応する内径を有する複数の搬入側凹部を形成し、第２アーム用ウェーハ受けに複数種類のウェーハの外径に相応する内径を有する複数の搬出側凹部を形成し、複数の搬入側凹部の底面を外側から内側に向うに従って順次段階的に低くなるように形成し、更に複数の搬出側凹部の底面を外側から内側に向うに従って順次段階的に低くなるように形成したので、外径の異なるウェーハにイオン注入するときに、第１及び第２アーム用ウェーハ受けの交換という煩わしい作業を不要にできる。この結果、インチコンバージョン作業時間を短縮できる。
【００３２】
またプラテンにウェーハを受ける複数のプラテン用ウェーハ受けを突設し、これらのプラテン用ウェーハ受けに複数種類のウェーハの外径に相応する内径を有する複数のプラテン用凹部を形成し、複数のプラテン用凹部の底面を外側から内側に向うに従って順次段階的に低くなるように形成すれば、上記第１アーム用ウェーハ受け及び第２アーム用ウェーハ受けの交換を不要にできるとともに、プラテン用ウェーハ受けの交換という煩わしい作業も不要にできるので、更にインチコンバージョン作業時間を短縮できる。
【００３３】
更に第１及び第２エアロック室用ウェーハ受けに複数種類のウェーハの外径に相応する内径を有する複数の第１及び第２エアロック室用凹部をそれぞれ形成し、複数の第１エアロック室用凹部の底面を外側から内側に向うに従って順次段階的に低くなるように形成し、複数の第２エアロック室用凹部の底面を外側から内側に向うに従って順次段階的に低くなるように形成すれば、上記第１アーム用ウェーハ受け、第２アーム用ウェーハ受け及びプラテン用ウェーハ受けの交換を不要にできるとともに、第１及び第２エアロック室用ウェーハ受けの交換という煩わしい作業も不要にできるので、インチコンバージョン作業時間を更に短縮できる。
【図面の簡単な説明】
【図１】本発明実施形態ウェーハ搬送装置の第１アームが第１エアロック室用ウェーハ受けから第１ウェーハを受取っている状態を示す平面図。
【図２】第１アームが第１ウェーハをプラテン用ウェーハ受けに載せている状態を示す平面図。
【図３】第１アームが第１ウェーハをプラテン用ウェーハ受けに載せた後に中立位置に戻った状態を示す平面図。
【図４】第２アームがプラテン用ウェーハ受けから第１ウェーハを受取り、かつ第１アームが第１エアロック室用ウェーハ受けから第２ウェーハを受取っている状態を示す平面図。
【図５】第２アームが第１ウェーハを第２エアロック室用ウェーハ受けに載せ、かつ第１アームが第２ウェーハをプラテン用ウェーハ受けに載せている状態を示す平面図。
【図６】図１のＡ−Ａ線断面図。
【図７】図１のＢ−Ｂ線断面図。
【図８】図４のＣ−Ｃ線断面図。
【図９】図４のＤ−Ｄ線断面図。
【図１０】図５のＥ−Ｅ線断面図。
【図１１】図５のＦ−Ｆ線断面図。
【図１２】プラテンの要部斜視図。
【符号の説明】
１０ウェーハ搬送装置
１１，１２ウェーハ
１３エンドステーション
１４第１エアロック室用ウェーハ受け
１４ｃ，１４ｄ第１エアロック室用凹部
１７ｃ，１７ｄ第２エアロック室用凹部
１６プラテン
１６ｂプラテン用ウェーハ受け
１６ｃ，１６ｄプラテン用凹部
１７第２エアロック室用ウェーハ受け
１８第１アーム
１９第２アーム
２６，２７第１アーム用ウェーハ受け
２６ａ，２７ａ，２６ｂ，２７ｂ第１凹部
２８，２９第２アーム用ウェーハ受け
２８ａ，２９ａ，２８ｂ，２９ｂ第２凹部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wafer transfer apparatus suitable for transferring a wafer to a medium current ion implantation apparatus.
[0002]
[Prior art]
Conventionally, an air lock chamber that communicates with the inside and outside of the chamber is opened and closed from the inside of the chamber by a platen that holds and holds the wafer, and this platen rotates between a position where the air lock chamber is closed by a platen drive mechanism and a position where the wafer is processed. A vacuum chamber configured as described above is disclosed (Japanese Patent Laid-Open No. 7-19340). In this vacuum chamber, the outside of the air lock chamber is opened and closed by an air lock door. Accordingly, at least one of the air lock door and the platen is closed, and the chamber is configured not to be opened to the atmosphere. The air lock door has three wafer guides that hold the wafer in a state where the wafer is placed, and the platen is configured to hold the wafer by an electrostatic chuck.
[0003]
In the vacuum chamber configured as described above, the air lock chamber is first closed from the inside of the chamber by the platen, and the wafer is placed on the wafer guide of the air lock door below the air lock chamber, and then the air lock door. The air lock chamber is closed from the outside of the chamber by the air lock door. Next, air is discharged from the air lock chamber, the electrostatic chuck is activated, and the platen sucks and fixes the wafer. Further, the platen is driven by the platen driving means to rise vertically, and in this state, ions are implanted into the wafer. Since the platen carries the wafer in this way, the wafer is securely fixed and held by the platen, and particles or the like are not generated from the wafer during the carrying. As a result, contamination inside the vacuum chamber can be suppressed.
[0004]
[Problems to be solved by the invention]
In the conventional vacuum chamber disclosed in Japanese Patent Application Laid-Open No. 7-19340, when a plurality of types of wafers having different outer diameters are mounted, a plurality of types of wafer guides corresponding to the outer diameters of these wafers are prepared. Keep it. When ion implantation is performed on wafers having different outer diameters, the wafer guide must be replaced with one corresponding to the outer diameter of the wafer. For this reason, there has been a problem that the operation time for switching the apparatus to implant ions into wafers having different outer diameters, that is, the inch conversion operation time is increased.
The object of the present invention is to eliminate the need for exchanging the arm wafer holder, the platen wafer holder, and the air lock chamber wafer receiver during the inch conversion operation for ion implantation into wafers having different outer diameters. An object of the present invention is to provide a wafer transfer apparatus that can shorten the work time.
[0005]
[Means for Solving the Problems]
As shown in FIGS. 1 and 6, the invention according to claim 1 includes a pair of first arm wafer receivers 26, 27 spaced apart from each other for mounting the wafers 11, 12. A first arm 18 that transports the wafers 11 and 12 held by the wafer receiver 14 to a platen 16 for ion implantation, and a pair of second arm wafer receivers 28 that are spaced apart from each other for mounting the wafers 11 and 12. , 29 and the second arm 19 for transporting the wafers 11, 12 held by the platen 16 to the second air lock chamber wafer receiver 17.
The characteristic configuration is that a plurality of types of wafers 11 and 12 having different diameters can be accommodated in a pair of first arm wafer receivers 26 and 27 spaced apart from each other, and the outer diameters of the plurality of types of wafers 11 and 12 can be accommodated. A plurality of carry-in recesses 26a, 27a, 26b and 27b having corresponding inner diameters are formed, and a plurality of types of wafers 11 and 12 having different diameters are accommodated in a pair of second arm wafer receivers 28 and 29 spaced apart from each other. A plurality of carry-out recesses 28a, 29a, 28b, and 29b having inner diameters corresponding to the outer diameters of the plurality of types of wafers 11 and 12 are formed, and a plurality of carry-in recesses 26a, 27a, 26b, and 27b are formed. The bottom surface of each of the plurality of carry-out side recesses 28a, 29a, 28b, and 29b is formed so as to be gradually lowered from the outside toward the inside. A platen disk 16a is formed so as to be gradually lowered from the side toward the inside, and the platen 16 is fixed to a platen support shaft that extends in the vertical direction, and can be rotated and raised together with the platen support shaft. The platen disk 16a has three platen wafer receivers 16b extending radially from the center and projecting upward on the upper surface of the platen disk 16a. The three platen wafer receivers 16b have a diameter. A plurality of platen recesses 16c and 16d that can accommodate different types of wafers 11 and 12 and have inner diameters corresponding to the outer diameters of the plurality of types of wafers 11 and 12 are formed, respectively. , 16d are formed so as to be gradually lowered from the outside toward the inside, and the bottom of the three platen wafer receivers 16b is formed. Two platen wafer receivers 16b are provided close to each other, and the remaining one platen wafer receiver 16b is provided so as to face the two platen wafer receivers 16b with the platen support shaft as a center. The distance between the pair of first arm wafer receivers 26 and 27 is such that the tip of the first arm 18 comes above the first air lock chamber wafer receiver 14. Formed in the first airlock chamber wafer receiver 14 It is an interval that can be loosely fitted to the first convex portion 14b, and can be loosely fitted to the three platen wafer receivers 16b when the tip of the first arm 18 comes above the platen 16. The interval between the pair of second arm wafer receivers 28 and 29 is an interval that can be loosely fitted to the three platen wafer receivers 16b when the tip of the second arm 19 comes above the platen 16. Moreover, when the tip of the second arm 19 comes above the second air lock chamber wafer receiver 17. Formed in second air lock chamber wafer receiver 17 It is in the place which is the space | interval which can be loosely fitted in the 2nd convex part 17b.
[0006]
In the wafer transfer apparatus according to the first aspect, in the inch conversion operation for converting from the ion implantation operation to the wafer 11 having a predetermined outer diameter to the ion implantation operation to the wafer 12 having a different outer diameter, the comparison is made. Since the exchange of the first arm wafer receivers 26 and 27 and the second arm wafer receivers 28 and 29, which is a troublesome operation, can be eliminated, the inch conversion operation time can be shortened. For this reason, it is possible to quickly implant ions into the wafer 12 having different outer diameters.
[0007]
Also The replacement of the first arm wafer receivers 26 and 27 and the second arm wafer receivers 28 and 29 can be made unnecessary, and the exchange of the platen wafer receiver 16b can also be made unnecessary, thereby further shortening the inch conversion work time.
[0008]
Claim 2 The invention according to claim 1 As shown in FIGS. 1 and 10, the first airlock chamber wafer receiver 14 can accommodate a plurality of types of wafers 11 and 12 having different diameters, and a plurality of types of wafers 11. , 12 are formed with a plurality of first air lock chamber recesses 14c, 14d, and a plurality of types of wafers 11, 12 having different diameters are accommodated in the second air lock chamber wafer receiver 17. A plurality of second air lock chamber recesses 17c and 17d having inner diameters corresponding to the outer diameters of the plurality of types of wafers 11 and 12 are formed, respectively, and a plurality of first air lock chamber recesses 14c and 14d are formed. The bottom surfaces of the second airlock chamber recesses 17c and 17d are formed so as to gradually lower from the outside toward the inside. It characterized in that it is formed so as to be sequentially and gradually lower me.
This claim 2 In the wafer transfer apparatus described in 1), the first arm wafer receivers 26 and 27, the second arm wafer receivers 28 and 29, and the platen wafer receiver 16b can be made unnecessary, and the first air lock chamber wafer can be used. Since it is not necessary to replace the receiver 14 and the second air lock chamber wafer receiver 17, the inch conversion work time can be further shortened.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
As shown in FIG. 1 and FIGS. 6 to 8, the wafer transfer apparatus 10 is provided adjacent to the end station 13 and the vacuum end station 13 provided for ion implantation into the wafers 11 and 12, respectively. The first and second airlock chambers, the first airlock chamber wafer receiver 14 for carrying the wafers 11 and 12 from the atmosphere through the first airlock chamber and into the end station 13, and the wafers 11 and 12 are ended. The second airlock chamber wafer receiver 17 that is carried out from the station 13 through the second airlock chamber to the atmosphere, the first airlock chamber wafer receiver 14 that has arrived in the end station 13, and the end station 13. Inside the end station 13 at predetermined intervals from the incoming second airlock chamber wafer receiver 17. And a platen 16 which is provided.
[0010]
The ions implanted into the wafers 11 and 12 are boron (B), phosphorus (P), or arsenic (As), and the ion implantation apparatus (not shown) has a maximum beam current amount of 0.5 mA or more and less than 5 mA. This is a medium current ion implanter. This ion implantation apparatus is configured to be capable of ion implantation into a first wafer 11 having an outer diameter of 150 mm and a second wafer 12 having an outer diameter of 100 mm.
[0011]
Although not shown, the first air lock chamber can be switched to either communication with the end station 13 or communication with the atmosphere, and is provided to carry the wafers 11 and 12 into the end station 13. That is, the first air lock chamber is a mechanism for transferring the wafers 11 and 12 from the atmosphere into the vacuum end station 13 without breaking the vacuum of the end station 13 by switching between atmospheric pressure and vacuum. . Although not shown, the second air lock chamber can be switched to either communication with the end station 13 or communication with the atmosphere, and is provided to carry the wafers 11 and 12 out of the end station 13. That is, the second air lock chamber is a mechanism for transferring the wafers 11 and 12 from the vacuum end station 13 to the atmosphere without breaking the vacuum of the end station 13 by switching between atmospheric pressure and vacuum. .
[0012]
The platen 16 is fixed to a platen support shaft (not shown) extending in the vertical direction, and can be rotated together with the platen support shaft 16a. And three platen wafer receivers 16b projecting upward (FIGS. 1, 7, and 12). Of the three platen wafer receivers 16b, the two platen wafer receivers 16b are provided in close proximity to each other, and the remaining one platen wafer receiver 16b has the above two sheets centered on the platen support shaft. It is provided so as to face the platen wafer receiver 16b. The wafers 11 and 12 are held by the platen 16 by being transferred from the first airlock chamber wafer receiver 14 to the platen 16 by the first arm 18 to be described later and mounted on the upper surface of the three platen wafer receivers 16b. . Further, when the platen 16 is raised, the wafers 11 and 12 are configured to move to an ion implantation position (not shown) of the ion implantation apparatus.
[0013]
The first airlock chamber wafer receiver 14 is fixed to a first support shaft (not shown) extending in the vertical direction and is rotatable with the first support shaft, and the first disk. The upper surface of 14a has the 1st convex part 14b formed in the substantially U shape (Drawing 1 and Drawing 6). The wafers 11 and 12 are held in the first air lock chamber wafer receiver 14 by being carried into the first air lock chamber wafer receiver 14 in the end station 13 and mounted on the upper surface of the first convex portion 14b. .
[0014]
Further, the second air lock chamber wafer receiver 17 is fixed to a second support shaft (not shown) extending in the vertical direction and is rotatable with the second support shaft, and the second disk. It has the 2nd convex part 17b formed in the substantially U shape on the upper surface of 17a (FIG.1 and FIG.10). The wafers 11 and 12 are transferred from the platen 16 to the second air lock chamber wafer receiver 17 by the second arm 19 to be described later, and the wafers 11 and 12 are placed on the upper surface of the second convex portion 17b. It is held by the chamber wafer receiver 17.
[0015]
On the other hand, the end station 13 is provided with a first arm 18 for transporting the wafers 11 and 12 held by the first air lock chamber wafer receiver 14 to the platen 16. The first arm 18 includes a first arm support shaft 21 erected on an end station 13 between the first airlock chamber wafer receiver 14 and the platen 16 so as to be rotatable and movable up and down, and a base end thereof. The first arm 18 is fitted to the first arm spindle 21 (FIG. 1).
[0016]
A pair of first arm wafer receivers 26 and 27 for mounting the wafers 11 and 12 are attached to the tip of the first arm 18 (FIGS. 1 and 6). The pair of first arm wafer receivers 26 and 27 are respectively attached to the lower surface of the first arm 18 at a predetermined interval in the longitudinal direction (FIGS. 1 and 6). The pair of first arm wafer receivers 26 and 27 can accommodate the first and second wafers 11 and 12 having different diameters, and the inner diameter corresponding to the outer diameter of the wafers 11 and 12, ie, the first. The outer first recesses 26a and 27a and the inner first recesses 26b and 27b having inner diameters slightly larger than the outer diameters of the second wafers 11 and 12 are formed, respectively. The inner diameters of the outer first recesses 26 a and 27 a are formed 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameters of the inner first recesses 26 b and 27 b are formed 2 to 3 mm larger than the outer diameter of the second wafer 12. It is preferable. Furthermore, the bottom surfaces of the outer first recesses 26a and 27a and the inner first recesses 26b and 27b are formed so as to be gradually lowered from the outside toward the inside. That is, the bottom surfaces of the inner first recesses 26b and 27b are formed lower than the bottom surfaces of the outer first recesses 26a and 27a.
[0017]
Further, the end station 13 is provided with a second arm 19 for transporting the wafers 11 and 12 held by the platen 16 to the second air lock chamber wafer receiver 17. The second arm 19 has a second arm support shaft 23 erected on the end station 13 between the platen 16 and the second air lock chamber wafer receiver 17 so as to be rotatable and movable up and down, and a base end thereof. And a second arm 19 fitted to the second arm support shaft 23.
[0018]
A pair of second arm wafer receivers 28 and 29 for mounting the wafers 11 and 12 are attached to the tip of the second arm 19 (FIGS. 1 and 10). The pair of second arm wafer receivers 28 and 29 can accommodate the first and second wafers 11 and 12 having different diameters, and the inner diameters corresponding to the outer diameters of the wafers 11 and 12, that is, the first and second wafers are received. Outer second recesses 28a and 29a and inner second recesses 28b and 29b having inner diameters slightly larger than the outer diameters of the second wafers 11 and 12 are formed, respectively. The inner diameters of the outer second recesses 28 a and 29 b are formed 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameters of the inner second recesses 28 b and 29 b are formed 2 to 3 mm larger than the outer diameter of the second wafer 12. It is preferable. Furthermore, the bottom surfaces of the outer second recesses 28a and 29a and the inner second recesses 28b and 29b are formed so as to gradually become lower from the outside toward the inside. That is, the bottom surfaces of the inner second recesses 28b and 29b are formed lower than the bottom surfaces of the outer second recesses 28a and 29a.
[0019]
The distance between the pair of first arm wafer receivers 26 and 27 can be loosely fitted to the first convex portion 14b when the tip of the first arm 18 comes above the first air lock chamber wafer receiver 14. The interval is such that the first arm 18 can be loosely fitted to the three platen wafer receivers 16b when the tip of the first arm 18 comes above the platen 16 (FIGS. 1, 6, and 7). The interval between the pair of second arm wafer receivers 28 and 29 is an interval that can be loosely fitted to the three platen wafer receivers 16b when the tip of the second arm 19 arrives above the platen 16. In addition, when the tip of the second arm 19 arrives above the second air lock chamber wafer receiver 17, it is the interval that can be loosely fitted to the second convex portion 17 b (FIGS. 1, 8, and 10).
[0020]
On the other hand, the three platen wafer receivers 16b can accommodate the first and second wafers 11 and 12 having different diameters and have inner diameters corresponding to the outer diameters of the wafers 11 and 12, that is, the first and second wafers 16b. An outer platen recess 16c and an inner platen recess 16d having an inner diameter slightly larger than the outer diameter of the second wafers 11 and 12 are respectively formed (FIGS. 2, 5, 7, 11, and 12). The inner diameter of the outer platen recess 16 c is preferably 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner platen recess 16 d is preferably 2-3 mm larger than the outer diameter of the second wafer 12. Further, the bottom surfaces of the outer platen concave portion 16c and the inner platen concave portion 16d are formed so as to become lower step by step from the outer side toward the inner side. That is, the bottom surface of the inner platen recess 16d is formed lower than the bottom surface of the outer platen recess 16c.
[0021]
The first convex portion 14b of the first air lock chamber wafer receiver 14 can accommodate the first and second wafers 11 and 12 having different diameters and corresponds to the outer diameters of the wafers 11 and 12. An outer first airlock recess 14c and an inner first airlock chamber recess 14d having an inner diameter, that is, an inner diameter slightly larger than the outer diameter of the first and second wafers 11 and 12, are formed. The inner diameter of the outer first air lock chamber recess 14 c is formed by 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner first air lock chamber recess 14 d is 2 to 3 mm from the outer diameter of the second wafer 12. It is preferable to form large. Furthermore, the bottom surfaces of the outer first air lock chamber recess 14c and the inner first air lock chamber recess 14d are formed so as to gradually become lower from the outside toward the inside. That is, the bottom surface of the inner first air lock chamber recess 14d is formed lower than the bottom surface of the outer first air lock chamber recess 14d.
[0022]
Further, the first and second wafers 11 and 12 having different diameters can be accommodated in the second convex portion 17 b of the second air lock chamber wafer receiver 17 and correspond to the outer diameters of these wafers 11 and 12. An outer second airlock recess 17c and an inner second airlock chamber recess 17d having an inner diameter, that is, an inner diameter slightly larger than the outer diameter of the first and second wafers 11 and 12, are formed. The inner diameter of the outer second air lock chamber recess 17 c is formed by 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner second air lock chamber recess 17 d is 2 to 3 mm from the outer diameter of the second wafer 12. It is preferable to form large. Further, the bottom surfaces of the outer second air lock chamber recess 17c and the inner second air lock chamber recess 17d are formed so as to gradually become lower from the outside toward the inside. That is, the bottom surface of the inner second air lock chamber recess 17d is formed lower than the bottom surface of the outer second air lock chamber recess 17d.
[0023]
The operation of the wafer transfer apparatus 10 configured as described above will be described with reference to FIGS.
First, the first air lock chamber wafer receiver 14 is positioned in the first air lock chamber, and the first air lock chamber is opened to the atmosphere. 14 on the outer first air lock chamber recess 14c. In this state, after the air is discharged from the first air lock chamber and evacuated, the first air lock chamber wafer receiver 14 is moved into the end station 13. Next, the first arm 18 is rotated around the first arm support shaft 21 and the tip thereof is positioned above the first air lock chamber wafer receiver 14 (FIGS. 1 and 6A). At this time, the pair of first arm wafer receivers 26 and 27 are loosely fitted to the first convex portion 14b so as to sandwich the first convex portion 14b, and are loosely inserted between the first disc 14a and the first wafer 11. .
[0024]
In this state, when the first arm 18 is raised in the direction indicated by the broken line arrow in FIG. 6A, the first wafer 11 is placed in the first outer recesses 26a, 27a of the pair of first arm wafer receivers 26, 27. At the same time, the first airlock chamber wafer receiver 14 is detached. Next, after the first arm 18 is rotated in the direction indicated by the solid line arrow in FIG. 1 and its tip is positioned above the platen 16 (FIGS. 2 and 7A), the first arm 18 is moved to FIG. When lowered in the direction indicated by the broken line arrow a), the first wafer 11 is placed on the outer platen recess 16c of the three platen wafer receivers 16b and detached from the pair of first arm wafer receivers 26, 27. .
[0025]
Next, the first arm 18 is rotated in the direction indicated by the solid line arrow in FIG. 2, and its tip is stopped at an intermediate position between the first air lock chamber wafer receiver 14 and the platen 16 (FIG. 3). In this state, the platen disk 16a is raised, the first wafer 11 is transferred to the ion implantation position of the ion implantation apparatus, and ions are implanted into the first wafer 11. After the ion implantation is completed, the platen disk 16a is lowered together with the first wafer 11, and then the second arm 19 is rotated in the direction indicated by the solid line arrow in FIG. 3 so that the tip thereof is positioned above the platen 16 ( 4 and 8 (a)).
[0026]
At this time, the pair of second arm wafer receivers 28 and 29 are loosely fitted to the platen wafer receivers 16b so as to sandwich the three platen wafer receivers 16b, and the platen disk 16a and the first wafer are also inserted. 11 is loosely inserted. In this state, when the second arm 19 is raised in the direction indicated by the broken line arrow in FIG. 8A, the first wafer 11 is placed on the outer second recesses 28a and 29a of the pair of second arm wafer receivers 28 and 29. At the same time, it is detached from the platen wafer receiver 16b. Further, after the second arm 19 is rotated in the direction indicated by the solid arrow in FIG. 4 and its tip is positioned above the second air lock chamber wafer receiver 17 (FIGS. 5 and 10A), When the two arms 19 are lowered in the direction indicated by the broken-line arrows in FIG. 10A, the first wafer 11 is placed in the outer second air lock chamber recess 17c and the pair of second arm wafer receivers 28 and 29 are removed. break away. After that, the first wafer 11 is transferred into the vacuum second air lock chamber by the second air lock chamber wafer receiver 17 and further unloaded from the air lock chamber after the second air lock chamber is opened to the atmosphere.
[0027]
On the other hand, when ion implantation is performed on a wafer having a different outer diameter, for example, when ion implantation is performed on a second wafer 12 having a diameter of 100 mm instead of the first wafer 11 having a diameter of 150 mm, the last first wafer 11 is transferred to the platen 16. After the ion implantation into the first wafer 11 is completed, the ion implantation into the second wafer 12 can be performed only by performing a relatively simple operation of exchanging the wafer clamper, the wafer alignment cup and the like of the ion implantation apparatus. In other words, the first arm wafer receivers 26 and 27, the second arm wafer receivers 28 and 29, the platen wafer receiver 16b, the first airlock chamber wafer receiver 14 and the second airlock chamber wafer receiver 17 are provided. Since it is not necessary to perform the relatively troublesome work of exchanging, the inch conversion work time can be shortened, whereby the second wafer 12 can be quickly transferred to the ion implanter by the wafer transfer device 10 and ion implantation can be performed.
[0028]
A procedure for transporting the second wafer 12 by the wafer transport apparatus 10 after the completion of the inch conversion operation will be described below.
First, the second wafer 12 is carried from the atmosphere through the first airlock chamber into the end station 13 and placed on the first airlock chamber recess 14d of the first airlock chamber wafer receiver 14 (see FIG. 2 and FIG. 2). FIG. 3). In this state, the first arm 18 is rotated in the direction indicated by the broken-line arrow in FIG. 3, and its tip is positioned above the first air lock chamber wafer receiver 14 (FIG. 4). At this time, the pair of first arm wafer receivers 26 and 27 are loosely fitted to the first convex portion 14b so as to sandwich the first convex portion 14b, and are loosely inserted between the first disc 14a and the second wafer 12. It is. When the first arm 18 is raised in this state, the second wafer 12 is placed in the first inner recesses 26b, 27b of the pair of first arm wafer receivers 26, 27 and from the first air lock chamber wafer receiver 14. break away. Next, after the first arm 18 is rotated in the direction indicated by the broken line arrow in FIG. 4 and its tip is positioned above the platen 16 (FIGS. 5 and 9A), the first arm 18 is moved to FIG. When the second wafer 12 is lowered in the direction indicated by the broken line arrow a), the second wafer 12 rests on the inner platen recess 16d of the three platen wafer receivers 16b and separates from the pair of first arm wafer receivers 26 and 27. .
[0029]
Next, the first arm 18 is rotated in the direction indicated by the broken-line arrow in FIG. 5, and its tip is stopped at an intermediate position between the first air lock chamber wafer receiver 14 and the platen 16. In this state, the platen disk 16a is raised, the second wafer 12 is transferred to the ion implantation position of the ion implantation apparatus, and ions are implanted into the second wafer 12. After the ion implantation is completed, the platen disk 16a is lowered together with the second wafer 12, and then the second arm 19 is rotated in the direction indicated by the solid line arrow in FIG. At this time, the pair of second arm wafer receivers 28 and 29 are loosely fitted to the platen wafer receivers 16b so as to sandwich the three platen wafer receivers 16b, and the platen disk 16a and the second wafer 12 are inserted. It is inserted in between. When the second arm 19 is raised in this state, the second wafer 12 is placed on the inner second recesses 28b and 29b of the pair of second arm wafer receivers 28 and 29 and detached from the platen wafer receiver 16b. Further, after the second arm 19 is rotated and its tip is positioned above the second air lock chamber wafer receiver 17, when the second arm 19 is lowered, the second wafer 12 is moved into the inner second air lock chamber. In addition to being placed in the concave portion 17d, the pair of second arm wafer receivers 28 and 29 is detached. After that, the second wafer 12 is transferred into the vacuum second air lock chamber by the second air lock chamber wafer receiver 17, and is transferred out of the air lock chamber after the second air lock chamber is opened to the atmosphere.
[0030]
In this embodiment, two types of wafers having an outer diameter of 150 mm and an outer diameter of 100 mm are cited as the plural types of wafers having different outer diameters. However, two types of wafers having an outer diameter of 125 mm and an outer diameter of 100 mm may be used. Alternatively, three types of wafers having an outer diameter of 150 mm, an outer diameter of 125 mm, and an outer diameter of 100 mm may be used, or two or more types of wafers having outer diameters other than those described above may be combined. In these cases, the first recess, the second recess, the platen recess, the first air lock chamber recess, and the second air lock chamber recess are matched to the outer diameter of the wafer, and the first arm wafer receiver, A plurality of arm wafer receivers, platens, first air lock chamber wafer receivers, and second air lock chamber wafer receivers are formed.
[0031]
【The invention's effect】
As described above, according to the present invention, a plurality of loading-side recesses having inner diameters corresponding to the outer diameters of the plurality of types of wafers are formed in the first arm wafer receiver, and a plurality of types of recesses are formed in the second arm wafer receiver. Forming a plurality of carry-out recesses having an inner diameter corresponding to the outer diameter of the wafer, and forming the plurality of carry-in recesses in such a manner that the bottom surfaces are gradually lowered from the outside toward the inside, and a plurality of carry-out sides The bottom surface of the recess is formed so as to gradually decrease from the outside toward the inside, so that the troublesome work of exchanging the first and second arm wafer holders is not required when ion implantation is performed on wafers having different outer diameters. Can be. As a result, the inch conversion work time can be shortened.
[0032]
In addition, a plurality of platen wafer receivers for receiving the wafer are projected on the platen, and a plurality of platen recesses having inner diameters corresponding to the outer diameters of the plurality of types of wafers are formed on these platen wafer receivers. If the bottom surface of the recess is formed so as to gradually lower from the outside toward the inside, it is not necessary to replace the first arm wafer receiver and the second arm wafer receiver, and the platen wafer receiver is replaced. This eliminates the need for cumbersome work, and further shortens the inch conversion work time.
[0033]
Further, a plurality of first and second air lock chamber recesses having inner diameters corresponding to the outer diameters of the plurality of types of wafers are formed in the first and second air lock chamber wafer receivers, respectively, and the plurality of first air lock chambers are formed. The bottom surface of the concave portion for use is formed so as to gradually decrease from the outside toward the inside, and the bottom surface of the plurality of second air lock chamber recesses is formed to gradually decrease from the outside toward the inside. For example, the first arm wafer receiver, the second arm wafer receiver and the platen wafer receiver need not be replaced, and the troublesome work of replacing the first and second air lock chamber wafer receivers can be eliminated. Inch conversion work time can be further shortened.
[Brief description of the drawings]
FIG. 1 is a plan view showing a state where a first arm of a wafer transfer apparatus according to an embodiment of the present invention receives a first wafer from a first air lock chamber wafer receiver.
FIG. 2 is a plan view showing a state in which the first arm places the first wafer on the platen wafer receiver.
FIG. 3 is a plan view showing a state in which the first arm returns to the neutral position after placing the first wafer on the platen wafer receiver;
FIG. 4 is a plan view showing a state in which the second arm receives the first wafer from the platen wafer receiver and the first arm receives the second wafer from the first airlock chamber wafer receiver.
FIG. 5 is a plan view showing a state in which the second arm places the first wafer on the second airlock chamber wafer receiver and the first arm places the second wafer on the platen wafer receiver.
6 is a cross-sectional view taken along line AA in FIG.
7 is a cross-sectional view taken along line BB in FIG.
8 is a cross-sectional view taken along line CC in FIG.
9 is a cross-sectional view taken along line DD of FIG.
10 is a cross-sectional view taken along line EE in FIG.
11 is a sectional view taken along line FF in FIG.
FIG. 12 is a perspective view of a main part of the platen.
[Explanation of symbols]
10 Wafer transfer device
11,12 wafers
13 End station
14 Wafer receiver for the first airlock chamber
14c, 14d First air lock chamber recess
17c, 17d Second air lock chamber recess
16 Platen
16b Platen wafer holder
16c, 16d Platen recess
17 Wafer receiver for second airlock chamber
18 First arm
19 Second arm
26, 27 First arm wafer holder
26a, 27a, 26b, 27b first recess
28, 29 Second arm wafer holder
28a, 29a, 28b, 29b second recess

Claims

The wafer (11) having a pair of first arm wafer receivers (26, 27) spaced apart to place the wafer (11, 12) and held by the first air lock chamber wafer receiver (14). , 12) a first arm (18) transporting to a platen (16) for ion implantation;
The wafer (11, 12) held by the platen (16) having a pair of second arm wafer receivers (28, 29) spaced apart to place the wafer (11, 12) thereon 2 In a wafer transfer apparatus comprising a second arm (19) for transferring to a wafer receiver (17) for an airlock chamber,
A plurality of types of wafers (11, 12) having different diameters can be accommodated in the pair of first arm wafer receivers (26, 27) spaced apart from each other, and outside the plurality of types of wafers (11, 12). A plurality of first recesses (26a, 27a, 26b, 27b) each having an inner diameter corresponding to the diameter are formed,
A plurality of types of wafers (11, 12) having different diameters can be accommodated in the pair of second arm wafer receivers (28, 29) spaced apart from each other, and the plurality of types of wafers (11, 12) A plurality of second recesses (28a, 29a, 28b, 29b) each having an inner diameter corresponding to the outer diameter are formed,
The bottom surfaces of the plurality of first recesses (26a, 27a, 26b, 27b) are formed so as to be gradually lowered from the outside toward the inside,
The bottom surfaces of the plurality of second recesses (28a, 29a, 28b, 29b) are formed so as to be gradually lowered from the outside toward the inside,
The platen (16) is fixed to a platen support shaft extending in the vertical direction, and can be rotated together with the platen support shaft (16a), and on the upper surface of the platen disk (16a). It has three plate-shaped platen wafer receivers (16b) extending radially from its center and projecting upward.
The three platen wafer receivers (16b) can accommodate a plurality of types of wafers (11, 12) having different diameters and have an inner diameter corresponding to the outer diameter of the plurality of types of wafers (11, 12). A plurality of platen recesses (16c, 16d) are respectively formed,
The bottoms of the plurality of platen recesses (16c, 16d) are formed so as to gradually decrease from the outside toward the inside,
Of the three platen wafer receivers (16b), two platen wafer receivers (16b) are provided close to each other, and the remaining one platen wafer receiver (16b) is centered on the platen support shaft. The two platen wafer receivers (16b) are provided so as to face each other,
The distance between the pair of first arm wafer receivers (26, 27) is such that the tip of the first arm (18) reaches above the first air lock chamber wafer receiver (14) . 1 is an interval that can be loosely fitted to the first convex portion (14b) formed on the wafer holder (14) for the airlock chamber , and the tip of the first arm (18) is located above the platen (16). Is the interval that can be loosely fitted to the three platen wafer receivers (16b) when
The distance between the pair of second arm wafer receivers (28, 29) is such that when the tip of the second arm (19) arrives above the platen (16), the three platen wafer receivers ( 16b), and when the tip of the second arm (19) reaches above the wafer receiver (17) for the second airlock chamber. A wafer transfer device, characterized in that the spacing is loosely engageable with the second convex portion (17b) formed on the wafer receiver (17) .

A plurality of types of wafers (11, 12) having different diameters can be accommodated in the first air lock chamber wafer receiver (14) and have an inner diameter corresponding to the outer diameter of the plurality of types of wafers (11, 12). A plurality of first air lock chamber recesses (14c, 14d) are respectively formed,
A plurality of types of wafers (11, 12) having different diameters can be accommodated in the second air lock chamber wafer receiver (17), and an inner diameter corresponding to the outer diameter of the plurality of types of wafers (11, 12). A plurality of second airlock chamber recesses (17c, 17d) having
The bottom surfaces of the plurality of first air lock chamber recesses (14c, 14d) are formed so as to be gradually lowered from the outside toward the inside,
It said plurality of second air-lock chamber recess (17c, 17d) of the bottom wafer transfer apparatus according to claim 1, wherein which is formed so as sequentially stepwise lower as direction from the outside to the inside.