JP2003174069A - Wafer carrier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To shorten the working time of inch conversion work for implanting ions into wafers having different outside diameter by eliminating the work for replacing an arm wafer receiver. <P>SOLUTION: First arm wafer receivers 26 and 27 are provided, respectively, with a plurality of carry-in side recesses 26a, 27a, 26b and 27b capable of containing a plurality of kinds of wafer 11 of different diameter and having inside diameters corresponding to the outside diameter of these wafers. Second arm wafer susceptor 28 and 29 are provided, respectively, with a plurality of carry-out side recesses 28a, 29a, 28b and 29b capable of containing a plurality of kinds of wafer of different diameter and having inside diameters corresponding to the outside diameter of these wafers. Bottom face of the plurality of carry-in side recesses is formed to become lower sequentially stepwise from the outside toward the inside and the bottom face of the plurality of carry-out side recesses is formed to become lower sequentially stepwise from the outside toward the inside. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer transfer apparatus suitable for transferring a wafer to a medium current ion implantation apparatus.

[0002]

2. Description of the Related Art Conventionally, an air lock chamber which communicates with the inside and outside of a chamber is opened and closed from the inside of the chamber by a platen for fixing and holding a wafer. A vacuum chamber configured to rotate between is disclosed (JP-A-7-19340). In this vacuum chamber, the outside of the airlock chamber is opened and closed by an airlock door. As a result, at least one of the airlock door and the platen is closed so that the inside of the chamber is not exposed to the atmosphere. Further, the airlock door has three wafer guides for holding the wafer in a mounted state, and the platen is configured to hold the wafer by an electrostatic chuck.

In the vacuum chamber thus constructed,
First, with the platen closing the airlock chamber from the inside of the chamber, the wafer is placed on the wafer guide of the airlock door below the airlock chamber, and then the airlock door rises to lock the airlock chamber. It is closed from the outside of the chamber by the door. Next, air is exhausted from the air lock chamber, the electrostatic chuck operates, and the platen sucks and fixes the wafer. Further, the platen is driven by the platen driving means to rise vertically, and ions are implanted into the wafer in this state. Since the platen carries the wafer in this manner, the wafer is securely fixed and held by the platen, and particles or the like are not generated from the wafer during the carrying. As a result, it is possible to suppress contamination inside the vacuum chamber.

[0004]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
In the vacuum chamber disclosed in Japanese Patent No. 19340, when a plurality of types of wafers having different outer diameters are respectively placed, a plurality of types of wafer guides corresponding to the outer diameters of these wafers are prepared. When implanting ions into a wafer having a different outer diameter, the wafer guide must be replaced with one corresponding to the outer diameter of the wafer. For this reason, there has been a problem that the work time for switching the device to implant ions into wafers having different outer diameters, that is, the inch conversion work time increases. The purpose of the present invention is to
When performing inch conversion work for ion implantation into wafers with different outer diameters, it is possible to shorten the inch conversion work time by eliminating the need to replace the arm wafer receiver, the platen wafer receiver, and the air lock chamber wafer receiver. To provide a wafer transfer device.

[0005]

The invention according to claim 1 is
As shown in FIG. 1 and FIG. 6, the wafers 11 and 12 held by the first air lock chamber wafer receiver 14 having the first arm wafer receivers 26 and 27 on which the wafers 11 and 12 are mounted are ionized. The first arm 18 for transporting to the platen 16 for injecting, and the wafer receivers 28, 29 for the second arm for mounting the wafers 11, 12 are provided. The second arm 1 for carrying to the wafer receiver 17 for the lock chamber
9 is an improvement of the wafer transfer device. The characteristic configuration is that a plurality of types of wafers 11 and 12 having different diameters can be accommodated in the first arm wafer receivers 26 and 27, and a plurality of types of wafers 11 and 12 having an inner diameter corresponding to the outer diameters of the plurality of types of wafers 11 and 12. Carry-in side recesses 26a, 27a, 2
6b and 27b are respectively formed, and a plurality of types of wafers 1 having different diameters are provided in the second arm wafer receivers 28 and 29.
A plurality of types of wafers 1 that can accommodate 1 and 12
A plurality of carry-out side recesses 28a, 29a, 28b, 29b each having an inner diameter corresponding to the outer diameter of 1, 12 are formed, and a plurality of carry-in side recesses 26a, 27a, 26b, 27b.
Is formed so that its bottom surface is gradually lowered from the outside to the inside, and a plurality of carry-out side recesses 28a, 29 are formed.
The bottom surfaces of a, 28b, and 29b are formed so as to be gradually lowered from the outside toward the inside.

In the wafer transfer apparatus according to the present invention, the inch conversion work for converting the ion implantation work into the wafer 11 having a predetermined outer diameter into the ion implantation work into the wafer 12 having a different outer diameter. In the above, the first arm wafer receivers 26 and 27 and the second arm wafer receivers 28 and 29, which are relatively troublesome operations,
Since it is not necessary to replace the, it is possible to shorten the inch conversion work time. Therefore, wafers 12 having different outer diameters
Ions can be rapidly implanted into

The invention according to claim 2 is the invention according to claim 1, and further, as shown in FIGS. 1 and 12, a plurality of platen wafer receivers 16b for receiving the wafers 11 and 12 are projected onto the platen 16. A plurality of types of wafers 1 having different diameters are installed in the plurality of platen wafer receivers 16b.
A plurality of types of wafers 1 that can accommodate 1 and 12
A plurality of platen recesses 16c, 16d each having an inner diameter corresponding to the outer diameter of 1, 12 are formed, and the bottom surfaces of the plurality of platen recesses 16c, 16d are gradually lowered from the outer side toward the inner side. It is characterized by being formed. In the wafer transfer device according to the second aspect, it is possible to eliminate the need to replace the first arm wafer receivers 26 and 27 and the second arm wafer receivers 28 and 29, and the platen wafer receiver 16b. Therefore, the inch conversion work time can be further shortened.

The invention according to claim 3 is the invention according to claim 1 or 2, and as shown in FIGS. 1 and 10,
A plurality of first airlock chambers capable of accommodating a plurality of types of wafers 11 and 12 having different diameters in the first airlock chamber wafer receiver 14 and having an inner diameter corresponding to the outer diameter of the plurality of types of wafers 11 and 12 Second recesses 14c and 14d are formed respectively, and the second airlock chamber wafer receiver 17 is formed.
A plurality of recesses 1 for the second airlock chamber which can accommodate a plurality of types of wafers 11 and 12 having different diameters and have an inner diameter corresponding to the outer diameter of the plurality of types of wafers 11 and 12
7c and 17d are respectively formed, and the bottom surfaces of the plurality of first air lock chamber recesses 14c and 14d are formed so as to be gradually lowered from the outer side to the inner side, and the plurality of second air lock chamber recesses 17c are formed. , 17d are formed so that the bottom surfaces thereof are gradually lowered from the outside toward the inside. In the wafer transfer apparatus according to the third aspect, the first arm wafer receiver 2 is provided.
6, 27, the second arm wafer receivers 28, 29 and the platen wafer receiver 16b can be eliminated, and the first airlock chamber wafer receiver 14 and the second airlock chamber wafer receiver 17 can be eliminated. Therefore, the inch conversion work time can be further shortened.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. As shown in FIGS. 1 and 6 to 8,
The wafer transfer device 10 is a vacuum end station 1 provided for implanting ions into the wafers 11 and 12.
3, the first and second airlock chambers adjacent to the end station 13, and the wafers 11 and 1
The first airlock chamber wafer receiver 14 that carries 2 from the atmosphere into the end station 13 through the first airlock chamber, and the wafers 11 and 12 from the end station 13 through the second airlock chamber to the atmosphere. The second airlock chamber wafer receiver 17 that is carried into the inside, the first airlock chamber wafer receiver 14 that has arrived inside the end station 13 and the second wafer that has arrived inside the end station 13
The platen 16 is provided in the end station 13 at a predetermined distance from the wafer receiver 17 for the air lock chamber.

Ions implanted in the wafers 11 and 12 are boron (B), phosphorus (P) or arsenic (As), and the ion implantation apparatus (not shown) has a maximum beam current amount of 0.5 mA or more. It is a medium current ion implanter of less than 5 mA. This ion implanter is configured to be capable of implanting ions into a first wafer 11 having an outer diameter of 150 mm and a second wafer 12 having an outer diameter of 100 mm.

Although not shown, the first air lock chamber can be switched to either communication with the end station 13 or communication with the atmosphere, and is provided to carry the wafers 11 and 12 into the end station 13. That is, by switching the atmospheric pressure and the vacuum in the first airlock chamber,
It is a mechanism for loading the wafers 11 and 12 from the atmosphere into the vacuum end station 13 without breaking the vacuum of the end station 13. Although not shown, the second air lock chamber can be switched to either communication with the end station 13 or communication with the atmosphere.
It is provided to carry the wafers 11 and 12 out of the end station 13. That is, in the second air lock chamber, by switching the atmospheric pressure and the vacuum, the end station 1
This is a mechanism for carrying the wafers 11 and 12 out of the vacuum end station 13 into the atmosphere without breaking the vacuum of No. 3.

The platen 16 is fixed to a vertically extending platen support shaft (not shown), is rotatable with the platen support shaft, and is movable up and down, and a platen disk 16a is provided on the upper surface of the platen disk 16a. It has three platen wafer receivers 16b extending radially from the center and projecting upward (FIGS. 1, 7, and 12). Of the three platen wafer receivers 16b, the two platen wafer receivers 16b are provided in close proximity to each other, and the remaining one platen wafer receiver 16b has the two platen wafer receivers 16b centered on the platen support shaft. Wafer receiver 16b for platen
Are provided so as to face each other. The wafers 11 and 12 are held by the platen 16 by being transferred from the first airlock chamber wafer receiver 14 to the platen 16 by the first arm 18 described later and placed on the upper surfaces of the three platen wafer receivers 16b. . Further, as the platen 16 moves up, the wafers 11 and 12 are configured to move to the ion implantation position (not shown) of the ion implantation apparatus.

Further, the first air lock chamber wafer receiver 14
Is a first disc 14a fixed to a first support shaft (not shown) extending in the vertical direction and rotatable with the first support shaft, and is formed in a substantially U-shape on the upper surface of the first disc 14a. The first convex portion 14b is formed (FIGS. 1 and 6). Wafer 11, 1
2 is carried into the first airlock chamber wafer receiver 14 in the end station 13 and placed on the upper surface of the first convex portion 14b, so that the first airlock chamber wafer receiver 14
Held in.

Further, the wafer receiver 17 for the second airlock chamber 17
Is a second disc 17a fixed to a second spindle (not shown) extending in the vertical direction and rotatable with the second spindle, and formed in a substantially U shape on the upper surface of the second disc 17a. The second convex portion 17b is formed (FIGS. 1 and 10). Wafer 11,
The wafer 12 for the second air lock chamber 12 is transferred from the platen 16 to the wafer receiver 17 for the second air lock chamber 17 by the second arm 19 described later, and the wafers 11 and 12 are placed on the upper surface of the second convex portion 17b. It is held by the receiver 17.

On the other hand, the end station 13 has a first
First arm 1 for transporting wafers 11 and 12 held by an airlock chamber wafer receiver 14 to a platen 16.
8 are provided. The first arm 18 has a first arm support shaft 21 rotatably and vertically erected at an end station 13 between the first airlock chamber wafer receiver 14 and the platen 16, and a base end. The first arm 18 is fitted on the first arm support shaft 21 (FIG. 1).

The wafer 1 is attached to the tip of the first arm 18.
A pair of first arm wafer receivers 26 and 27 for mounting 1 and 12 are attached (FIGS. 1 and 6). The pair of first arm wafer receivers 26 and 27 are used for the first arm 18.
Are attached to the lower surface of the sheet at predetermined intervals in the longitudinal direction thereof (FIGS. 1 and 6). Further, the pair of first arm wafer receivers 26 and 27 have first and second different diameters.
An outer first recess 26a capable of accommodating the wafers 11 and 12 and having an inner diameter corresponding to the outer diameter of these wafers 11 and 12, that is, an inner diameter slightly larger than the outer diameters of the first and second wafers 11 and 12. , 27a and inner first recess 2
6b and 27b are formed respectively. Outer first recess 26
The inner diameters of a and 27a are 2 to 3 from the outer diameter of the first wafer 11.
It is preferable that the inner first recesses 26b and 27b are formed to have a larger inner diameter than the outer diameter of the second wafer 12 by 2 to 3 mm. Further, the outer first recesses 26a, 27
The bottom surfaces of the a and the inner first recesses 26b and 27b are formed so as to be gradually lowered from the outer side to the inner side. That is, the bottom surfaces of the inner first recesses 26b and 27b are formed lower than the bottom surfaces of the outer first recesses 26a and 27a.

In the end station 13, the second arm 19 for transferring the wafers 11 and 12 held by the platen 16 to the wafer receiver 17 for the second airlock chamber.
Is provided. The second arm 19 has a second arm support shaft 23 rotatably and vertically erected on the end station 13 between the platen 16 and the second airlock chamber wafer receiver 17, and a base end. This second arm support shaft 2
And a second arm 19 fitted to the third arm 3.

The wafer 1 is attached to the tip of the second arm 19.
A pair of second arm wafer receivers 28 and 29 for mounting 1 and 12 are attached (FIGS. 1 and 10). The pair of second arm wafer receivers 28 and 29 can accommodate the first and second wafers 11 and 12 having different diameters, and the inner diameters corresponding to the outer diameters of these wafers 11 and 12, ie, the first and second wafers. Outer second recesses 28a and 29a and inner second recesses 28b and 29b having inner diameters slightly larger than the outer diameters of the second wafers 11 and 12 are formed, respectively.
The inner diameters of the outer second recesses 28a and 29b are equal to those of the first wafer 11
2 to 3 mm larger than the outer diameter of the inner second recess 2
The inner diameters of 8b and 29b are 2 to more than the outer diameter of the second wafer 12.
It is preferably formed to be 3 mm larger. Further outside second
The bottom surfaces of the recesses 28a and 29a and the inner second recesses 28b and 29b are formed so as to be gradually lowered from the outside toward the inside. That is, the inner second recesses 28b, 29
The bottom surface of b is formed lower than the bottom surfaces of the outer second recesses 28a and 29a.

A pair of first arm wafer receivers 2
The distances 6 and 27 are such that the first arm 18 can be loosely fitted into the first convex portion 14b when the tip end portion of the first arm 18 reaches above the first airlock chamber wafer receiver 14, and The distance is such that the tip end of 18 can be loosely fitted to the three platen wafer receivers 16b when it reaches above the platen 16 (FIGS. 1, 6, and 7). Further, the distance between the pair of second arm wafer receivers 28 and 29 is equal to the second arm 19
Of the second air lock chamber wafer receiving member 17 has a distance such that it can be loosely fitted into the three platen wafer receivers 16b when the leading end portion of the second arm 19 arrives above the platen 16. The second convex portion 1 when coming up
7b is a space that allows loose fitting (see FIGS. 1, 8 and 1).
0).

On the other hand, three platen wafer receivers 16
b is the first and second wafers 11 and 12 having different diameters.
Inside diameters of the first and second wafers 11, 12
An outer platen recess 16c and an inner platen recess 16d each having an inner diameter slightly larger than the outer diameter of 12 are formed (FIG. 2, FIG. 5, FIG. 7, FIG. 11, and FIG. 12).
The inner diameter of the outer platen recess 16c is formed to be 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner platen recess 16d is 2 to 3 m from the outer diameter of the second wafer 12.
It is preferably formed to be large. Further, the bottom surfaces of the outer platen recessed portion 16c and the inner platen recessed portion 16d are formed so as to be gradually lowered stepwise from the outside toward the inside. That is, the bottom surface of the inner platen recess 16d is formed lower than the bottom surface of the outer platen recess 16c.

The first airlock chamber wafer receiver 14 is also provided.
The first convex portion 14b can accommodate the first and second wafers 11 and 12 having different diameters and has an inner diameter corresponding to the outer diameter of the wafers 11 and 12, that is, the first and second wafers.
An outer first airlock recess 14c and an inner first airlock recess 14d are formed, each having an inner diameter slightly larger than the outer diameter of the wafers 11 and 12. The inner diameter of the outer first airlock chamber recess 14c is formed to be 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner first airlock chamber recess 14d is larger than the outer diameter of the second wafer 12.
It is preferable to be formed to be larger by 3 mm. Further, the bottom surfaces of the outer first air-lock chamber recess 14c and the inner first air-lock chamber recess 14d are formed so that they gradually lower stepwise from the outside toward the inside. That is, the bottom surface of the inner first airlock chamber recess 14d is formed lower than the bottom surface of the outer first airlock chamber recess 14d.

Further, the wafer receiver 17 for the second airlock chamber 17
The second convex portion 17b can accommodate the first and second wafers 11 and 12 having different diameters and has an inner diameter corresponding to the outer diameter of these wafers 11 and 12, that is, the first and second wafers.
An outer second airlock recess 17c and an inner second airlock recess 17d are formed, each having an inner diameter slightly larger than the outer diameters of the wafers 11 and 12. The inner diameter of the outer second airlock chamber recess 17c is formed to be 2 to 3 mm larger than the outer diameter of the first wafer 11, and the inner diameter of the inner second airlock chamber recess 17d is larger than the outer diameter of the second wafer 12 by 2 mm.
It is preferable to be formed to be larger by 3 mm. Further, the bottom surfaces of the outer second airlock chamber recess 17c and the inner second airlock chamber recess 17d are formed so as to be gradually lowered from the outside toward the inside. That is, the bottom surface of the inner second airlock chamber recess 17d is formed lower than the bottom surface of the outer second airlock chamber recess 17d.

The wafer transfer device 1 thus configured
The operation of 0 will be described with reference to FIGS. First of all
The first wafer 11 having an outer diameter of 150 mm is placed outside the first airlock chamber wafer receiver 14 in a state where the airlock chamber wafer receiver 14 is positioned in the first airlock chamber and the first airlock chamber is open to the atmosphere. It is mounted in the first airlock chamber recess 14c. In this state, air is discharged from the first airlock chamber to make it vacuum, and then the first airlock chamber wafer receiver 14 is moved into the end station 13. Next, the first arm 18 is rotated around the first arm support shaft 21, and the tip portion of the first arm 18 is rotated at the tip end thereof.
4 above (FIGS. 1 and 6 (a)). At this time, the pair of first arm wafer receivers 26, 27 is loosely fitted to the first convex portion 14b so as to sandwich the first convex portion 14b, and is also loosely inserted between the first disc 14a and the first wafer 11. .

In this state, when the first arm 18 is raised in the direction shown by the broken line arrow in FIG.
Is mounted on the outer first recesses 26a, 27a of the pair of first arm wafer receivers 26, 27 and is separated from the first airlock chamber wafer receiver 14. Next, after rotating the first arm 18 in the direction indicated by the solid arrow in FIG. 1 and positioning the tip of the first arm above the platen 16 (FIGS. 2 and 7A), the first arm 18 is moved to the position shown in FIG. When the first wafer 11 is lowered in the direction indicated by the broken line arrow in a), the first plate 11 has the outer platen recesses 16 of the three platen wafer receivers 16b.
a pair of first arm wafer receivers 2 while being mounted on c
Leave from 6, 27.

Next, the first arm 18 is rotated in the direction indicated by the solid line arrow in FIG. 2 to stop the tip of the first arm 18 at an intermediate position between the first airlock chamber wafer receiver 14 and the platen 16 (FIG. 3). In this state, the platen disk 16a is raised to convey the first wafer 11 to the ion implantation position of the ion implantation apparatus, and the first wafer 11 is ion-implanted. After the ion implantation is completed, the platen disk 16a is attached to the first wafer 1
1, the second arm 19 is rotated in the direction indicated by the solid line arrow in FIG.
6 (FIG. 4 and FIG. 8A).

At this time, the pair of second arm wafer receivers 28 and 29 are loosely fitted to the platen wafer receivers 16b so as to sandwich the three platen wafer receivers 16b, and the platen discs 16a and It is loosely inserted between the first wafers 11. In this state, if the second arm 19 is raised in the direction indicated by the broken line arrow in FIG.
The wafer 11 includes a pair of second arm wafer receivers 28,
It is placed in the outer second recessed portions 28a, 29a of 29 and is detached from the platen wafer receiver 16b. Further, after rotating the second arm 19 in the direction shown by the solid line arrow in FIG. 4 and positioning the tip of the second arm 19 above the second airlock chamber wafer receiver 17 (FIGS. 5 and 10 (a)), When the second arm 19 is lowered in the direction indicated by the broken line arrow in FIG. 10A, the first wafer 11 is moved to the outer second airlock chamber recess 1
7c, and is separated from the pair of second arm wafer receivers 28 and 29. Thereafter, the first wafer 11 is evacuated to the second vacuum chamber by the second airlock chamber wafer receiver 17.
It is carried into the airlock chamber, and after the second airlock chamber is opened to the atmosphere, it is carried out of the airlock chamber.

On the other hand, when ion implantation is performed on wafers having different outer diameters, for example, when ion implantation is performed on the second wafer 12 having a diameter of 100 mm instead of the first wafer 11 having a diameter of 150 mm, the last first wafer 11 is platen 16
After the ion implantation into the first wafer 11 is completed by carrying the ion implantation into the second wafer 12, the ion implantation into the second wafer 12 can be performed only by performing a relatively simple operation such as replacing a wafer clamper or a wafer alignment cup of the ion implantation device. it can.
In other words, the first arm wafer receivers 26 and 27, the second arm wafer receivers 28 and 29, the platen wafer receiver 16b, the first air lock chamber wafer receiver 14 and the second air lock chamber wafer receiver 17 are provided. Since the relatively troublesome work of exchanging is not required, the inch conversion work time can be shortened, and thus the second wafer 12 can be quickly transported to the ion implantation device by the wafer transport device 10 and ion implantation can be performed.

The procedure for carrying the second wafer 12 by the wafer carrying device 10 after the inch conversion work is completed will be described below. First, the second wafer 12 is removed from the atmosphere to the first
It is carried into the end station 13 through the airlock chamber and placed in the first airlock recess 14d of the first airlock chamber wafer receiver 14 (FIGS. 2 and 3). In this state, the first arm 18 is rotated in the direction shown by the broken line arrow in FIG.
Above (Fig. 4). At this time, the pair of first arm wafer receivers 26, 27 is loosely fitted to the first convex portion 14b so as to sandwich the first convex portion 14b, and is also loosely inserted between the first disc 14a and the second wafer 12. Be done. When the first arm 18 is lifted in this state, the second wafer 12 is placed inside the pair of first arm wafer receivers 26, 27.
The wafer is placed in the recesses 26b and 27b and is separated from the first airlock chamber wafer receiver 14. Then the first arm 1
8 is rotated in the direction indicated by the broken line arrow in FIG. 4, and its tip is positioned above the platen 16 (see FIGS. 5 and 9).
(A)), when the first arm 18 is lowered in the direction indicated by the broken line arrow in FIG. 9 (a), the second wafer 12 becomes the inner platen recess 16d of the three platen wafer receivers 16b.
And a pair of first arm wafer receivers 2
Leave from 6, 27.

Next, the first arm 18 is rotated in the direction indicated by the broken line arrow in FIG. 5 to stop the tip of the first arm 18 at an intermediate position between the first airlock chamber wafer receiver 14 and the platen 16. In this state, the platen disc 16a is raised to
The wafer 12 is transported to the ion implantation position of the ion implantation device, and the second wafer 12 is ion-implanted. After the ion implantation is completed, the platen disk 16a is lowered together with the second wafer 12, and then the second arm 19 is rotated in the direction indicated by the solid line arrow in FIG. At this time, the pair of second arm wafer receivers 28 and 29 are loosely fitted to the platen wafer receivers 16b so as to sandwich the three platen wafer receivers 16b, and the platen disc 16a and the second wafer 12 are also fitted. It is inserted in between. When the second arm 19 is lifted in this state, the second wafer 12 is moved to the inner second recesses 28b and 29b of the pair of second arm wafer receivers 28 and 29.
And is removed from the platen wafer receiver 16b. Further, when the second arm 19 is lowered after the second arm 19 is further rotated to position the tip of the second arm 19 above the second airlock chamber wafer receiver 17, the second wafer 12 is moved to the inner second airlock chamber. While being placed in the concave portion 17d for use, it is separated from the pair of second arm wafer receivers 28 and 29. After that, the second wafer 12 is transferred into the vacuum second airlock chamber by the second airlock chamber wafer receiver 17, and is further carried out of the airlock chamber after the second airlock chamber is opened to the atmosphere.

In this embodiment, as a plurality of types of wafers having different outer diameters, the outer diameter is 150 mm and the outer diameter is 10 mm.
Two types of wafers with a diameter of 0 mm are listed, but the outer diameter is 125 mm.
And two kinds of wafers having an outer diameter of 100 mm, or three kinds of wafers having an outer diameter of 150 mm, an outer diameter of 125 mm and an outer diameter of 100 mm, or a combination of two or more kinds of wafers having an outer diameter other than the above. But it's okay. In these cases, the first recess, the second recess, the platen recess, and the first recess
The recess for the air lock chamber and the recess for the second air lock chamber are matched with the outer diameter of the wafer to receive the wafer for the first arm,
A plurality of wafers are formed on the second arm wafer receiver, the platen, the first airlock chamber wafer receiver, and the second airlock chamber wafer receiver, respectively.

[0031]

As described above, according to the present invention, the first arm wafer receiver is formed with a plurality of loading-side recesses having inner diameters corresponding to the outer diameters of a plurality of types of wafers.
A plurality of carry-out side recesses having inner diameters corresponding to the outer diameters of a plurality of types of wafers are formed on the arm wafer receiver, and the bottom surfaces of the plurality of carry-in side recesses are formed so as to be gradually lowered from the outside toward the inside. In addition, since the bottom surfaces of the plurality of recesses on the unloading side are formed so as to be gradually lowered from the outside toward the inside, when the ions are implanted into the wafers having different outer diameters, the wafer receiving portions for the first and second arms are The troublesome work of replacing the can be eliminated. As a result, the inch conversion work time can be shortened.

A plurality of platen wafer receivers for receiving wafers are provided on the platen, and a plurality of platen recesses having inner diameters corresponding to the outer diameters of a plurality of types of wafers are formed in the platen wafer receivers. If the bottom surface of the platen concave portion is formed so as to be gradually lowered from the outside toward the inside, the replacement of the first arm wafer receiver and the second arm wafer receiver can be eliminated, and the platen wafer can be eliminated. Since the troublesome work of replacing the receiver can be eliminated, the inch conversion work time can be further shortened.

Furthermore, a plurality of first and second airlock chamber recesses having inner diameters corresponding to the outer diameters of a plurality of types of wafers are formed in the first and second airlock chamber wafer receivers, respectively. The bottom surface of the recess for the air lock chamber is formed so as to be gradually lowered from the outside toward the inside, and the bottom surfaces of the plurality of recesses for the second air lock chamber are gradually lowered as it goes from the outside to the inside. If it is formed, it is not necessary to replace the first arm wafer receiver, the second arm wafer receiver, and the platen wafer receiver, and the troublesome work of replacing the first and second airlock chamber wafer receivers is also unnecessary. Therefore, the inch conversion work time can be further shortened.

[Brief description of drawings]

FIG. 1 is a plan view showing a state in which a first arm of a wafer transfer device according to an embodiment of the present invention is receiving a first wafer from a first airlock chamber wafer receiver.

FIG. 2 is a plan view showing a state in which a first arm mounts a first wafer on a platen wafer receiver.

FIG. 3 is a plan view showing a state in which the first arm returns to the neutral position after placing the first wafer on the platen wafer receiver.

FIG. 4 shows the second arm from the platen wafer receiver to the first
The top view which shows the state which receives the wafer and the 1st arm is receiving the 2nd wafer from the wafer receiver for 1st airlock chambers.

FIG. 5 is a plan view showing a state in which the second arm mounts the first wafer on the second airlock chamber wafer receiver and the first arm mounts the second wafer on the platen wafer receiver.

6 is a cross-sectional view taken along the line AA of FIG.

7 is a sectional view taken along line BB of FIG.

8 is a cross-sectional view taken along the line CC of FIG.

9 is a cross-sectional view taken along the line DD of FIG.

10 is a cross-sectional view taken along the line EE of FIG.

11 is a sectional view taken along line FF of FIG.

FIG. 12 is a perspective view of a main part of the platen.

[Explanation of symbols]

10 Wafer transfer device 11,12 wafers 13 End station 14 Wafer holder for the 1st air lock chamber 14c, 14d First air lock chamber recess 17c, 17d second air lock chamber recess 16 Platen 16b Platen wafer receiver 16c, 16d Recess for platen 17 Wafer holder for second air lock chamber 18 First Arm 19 Second arm 26,27 Wafer receiver for 1st arm 26a, 27a, 26b, 27b 1st recessed part 28, 29 Wafer receiver for second arm 28a, 29a, 28b, 29b Second recess

Claims (3)

[Claims] 1. The wafer (11, 12) having a wafer receiver (26, 27) for a first arm for mounting a wafer (11, 12) and held by a wafer receiver (14) for a first airlock chamber. 12)
The platen (16) having a first arm (18) for transporting ions to the platen (16) for ion implantation, and a second arm wafer receiver (28, 29) for mounting the wafers (11, 12). ), And a second arm (19) for transferring the wafers (11, 12) held by the second air lock chamber wafer receiver (17) to the first arm wafer. A plurality of first recesses capable of accommodating a plurality of types of wafers (11, 12) having different diameters in the receivers (26, 27) and having an inner diameter corresponding to the outer diameter of the plurality of types of wafers (11, 12) (26a, 27a, 26b, 27b) are respectively formed, and the plurality of types of wafers (11, 12) having different diameters can be accommodated in the second arm wafer receiver (28, 29) and the plurality of types A plurality of second recesses (28a, 29a, 28b, 29b) each having an inner diameter corresponding to the outer diameter of the wafer (11, 12) are formed, The bottoms of the first recesses (26a, 27a, 26b, 27b) are formed so as to be gradually lowered from the outside toward the inside, and the bottoms of the plurality of second recesses (28a, 29a, 28b, 29b) are A wafer transfer device, wherein the wafer transfer device is formed so as to be gradually lowered from the outside toward the inside. 2. The platen (16) is provided with a plurality of platen wafer receivers (16b) for receiving the wafers (11, 12), and the plurality of platen wafer receivers (16b) have a plurality of types of wafers having different diameters. A plurality of platen recesses (16c, 16d) capable of accommodating (11, 12) and having inner diameters corresponding to the outer diameters of the plurality of types of wafers (11, 12) are formed, and the plurality of platen 2. The wafer transfer apparatus according to claim 1, wherein the bottom surfaces of the recess portions (16c, 16d) are formed so as to be gradually lowered from the outside toward the inside. 3. The first airlock chamber wafer receiver (14) is capable of accommodating a plurality of types of wafers (11, 12) having different diameters and has an outer diameter of the plurality of types of wafers (11, 12). A plurality of first airlock chamber recesses (14
c, 14d) are respectively formed, and the plurality of types of wafers (11, 12) having different diameters can be accommodated in the second airlock chamber wafer receiver (17), and the plurality of types of wafers (11, 12) A plurality of second air lock chamber recesses (17c, 17d) having an inner diameter corresponding to the outer diameter of 12)
And the bottoms of the plurality of first airlock chamber recesses (14c, 14d) are formed so as to be gradually lowered from the outside toward the inside, and the plurality of second airlock chamber recesses are formed. 3. The wafer transfer apparatus according to claim 1, wherein the bottom surfaces of (17c, 17d) are formed so as to be gradually lowered from the outside toward the inside.