JP4060827B2 - Nonvolatile semiconductor memory device - Google Patents

Description

  The present invention relates to an electrically rewritable nonvolatile semiconductor memory device (EEPROM), and more particularly to an EEPROM that performs multi-value storage in which more than one bit of information is stored in one memory cell.

  As one type of EEPROM, a NAND type EEPROM capable of high integration is known. In this method, a plurality of memory cells are connected in series in such a manner that their sources and drains are shared by adjacent ones, and connected as a unit to a bit line. A memory cell usually has a FETMOS structure in which a charge storage layer and a control gate are stacked. The memory cell array is integrated in a p-type well formed on a p-type substrate or an n-type substrate. The drain side of the NAND cell is connected to the bit line via the selection gate, and the source side is also connected to the common source line via the selection gate. The control gates of the memory cells are continuously arranged in the row direction to become word lines.

  The operation of this NAND cell type EEPROM is as follows. Data writing is performed in order from the memory cell farthest from the bit line. A high voltage Vpp (about 20V) is applied to the control gate of the selected memory cell, and an intermediate voltage Vppm (= about 10V) is applied to the control gate and the selection gate of the memory cell on the bit line side. The bit line is supplied with 0V or an intermediate voltage Vm (= about 8V) according to the data. When 0 V is applied to the bit line, the potential is transferred to the drain of the selected memory cell, and electrons are injected into the charge stack. As a result, the threshold value of the selected memory cell is shifted in the positive direction. This state is, for example, “1”. When Vm is applied to the bit line, electron injection does not occur effectively, so the threshold value does not change and remains negative. This state is "0" in the erased state. Data writing is performed simultaneously on the memory cells sharing the control gate.

  Data erasure is performed simultaneously on all the memory cells in the NAND cell. That is, all control gates are set to 0V, and the p-type well is set to 20V. At this time, the selection gate, bit line, and source line are also set to 20V. As a result, electrons in the charge storage layer are emitted to the p-type well in all the memory cells, and the threshold value is shifted in the negative direction.

  In data reading, the control gate of the selected memory cell is set to 0 V, and the control gate and select gate of the other memory cells are set to the power supply potential Vcc (for example, 5 V) to detect whether a current flows in the selected memory cell. Is done.

  Due to restrictions on the read operation, the threshold value after writing “1” must be controlled between 0 V and Vcc. For this reason, write verify is performed, only the memory cells insufficiently written “1” are detected, and rewrite data is set so that only the memory cells insufficiently written “1” are rewritten (bit-by-bit verification). . A memory cell in which “1” is insufficiently written is detected by reading the selected control gate at 0.5 V (verify voltage) (verify read).

  That is, if the threshold value of the memory cell is not 0.5 V or more with a margin with respect to 0 V, a current flows in the selected memory cell, and it is detected that “1” writing is insufficient. Since a current naturally flows in the memory cell in the “0” write state, a circuit called a verify circuit that compensates the current flowing through the memory cell is provided so that the memory cell is not mistaken for “1” write shortage. This verify circuit executes write verify at high speed.

  By writing data while repeating the write operation and the write verify, the write time is optimized for each memory cell, and the threshold value after writing “1” is controlled between 0V and Vcc.

  In order to realize multi-value storage with this NAND cell type EEPROM, for example, it is considered that there are three states after writing, “0”, “1”, and “2”. The threshold value is negative in the “0” write state, the threshold value is 0 V to 1/2 Vcc, for example, in the “1” write state, and the threshold value is 1/2 Vcc to Vcc in the “2” write state. In the conventional verify circuit, it is possible to prevent a memory cell to be in a “0” write state from being mistaken as a memory cell insufficiently written to “1” or “2”.

  However, since the conventional verify circuit is not for multi-value storage, the threshold value of the memory cell in the “2” write state is equal to or higher than the verify voltage for detecting whether or not “1” write is insufficient. In the case of a write shortage state of 2 Vcc or less, there is a problem in that when detecting whether or not “1” write is short, current does not flow in the memory cell, and it is mistakenly recognized that writing is sufficient.

  Further, in order to prevent misidentification of insufficient writing and to perform multi-valued write verification, rewriting is performed on a memory cell that is in a “2” write state with respect to a memory cell in which “1” is sufficiently written, and “ It is only necessary to perform verify writing by detecting whether or not 2 "writing is insufficient. However, in this case, since the “2” write state is set to the “2” write state after the “1” write, the write operation takes time and the write speed is slowed down.

  In addition, there is a problem that the multi-value storage EEPROM is difficult to be compatible with a computer that operates based on binary data, and this also causes a decrease in the operation speed of the EEPROM.

  As described above, when multi-value storage is performed in the conventional NAND cell type EEPROM and the bit-by-bit verification is performed by the conventional verify circuit, there is a problem that erroneous verification occurs. Further, in the case of a multi-value EEPROM, there is a problem in that data exchange with a computer that processes binary data becomes complicated, and as a result, the operation speed of the EEPROM decreases.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an EEPROM that can store multi-level information and can exchange data with the outside in binary. It is to provide.

  In order to solve the above problems, the present invention employs the following configuration.

That is, the present invention provides a NAND cell unit in which a plurality of memory cells that can be electrically rewritten and can have three storage states are connected in series and one end is connected to a bit line, and the NAND cell unit A write voltage is applied to the control gate of the memory cell selected for writing, and an intermediate voltage having a voltage between 0 V and the write voltage is applied to the control gates of memory cells other than the selected memory cell. And a write circuit that applies at least three types of write bit line voltages corresponding to write data to the bit line, wherein the write circuit is configured to respond to the write data. The first and second flip-flops whose storage states are set and the storage states of the first flip-flops The on / off operation is performed, and one of the three types of write bit line voltages or the other two types of write bit line voltages determined by the second flip-flop is supplied to the bit line. The on / off operation is performed in accordance with the storage state of the first and second MOS transistors and the second flip-flop, and one of the other two types of write bit line voltages is set to the above-described voltage. Third and fourth MOS transistors for supplying to the bit line, the intermediate voltage is applied to a control gate of a memory cell other than the selected memory cell, and the three kinds of write bits are applied to the bit line. After applying any one of the line voltages, the write voltage is applied to the control gate of the selected memory cell.

The present invention also provides a NAND cell unit in which a plurality of memory cells that can be electrically rewritten and can have three storage states are connected in series and one end is connected to a bit line; A write voltage is applied to the control gate of the memory cell selected for writing, and an intermediate voltage having a voltage between 0 V and the write voltage is applied to the control gates of memory cells other than the selected memory cell. And a write circuit that applies at least three types of write bit line voltages corresponding to write data to the bit line , wherein the write circuit is configured to respond to the write data. The first and second flip-flops whose storage states are set and the storage states of the first flip-flops The on / off operation is performed, and one of the three types of write bit line voltages or the other two types of write bit line voltages determined by the second flip-flop is supplied to the bit line. The on / off operation is performed in accordance with the storage state of the first and second MOS transistors and the second flip-flop, and one of the other two types of write bit line voltages is set to the above-described voltage. and a third and fourth MOS transistors supplied to the bit line, and applying the intermediate voltage to the control gates of the memory cells other than the selected memory cell and the cell, the three to the bit line After applying any one of the write bit line voltages, the write voltage is applied to the control gate of the selected memory cell.

  The multi-value (n-value) storage type EEPROM according to the present invention can store multi-value information and can exchange data with the outside in binary. Therefore, matching with a computer that operates based on binary data can be achieved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a block diagram showing a schematic configuration of a NAND cell type EEPROM according to the first embodiment of the present invention.

  The memory cell array 1 is provided with a bit line control circuit 2 for controlling a bit line at the time of reading / writing and a word line driving circuit 7 for controlling a word line potential. The bit line control circuit 2 and the word line drive circuit 7 are selected by the column decoder 3 and the row decoder 8, respectively. The bit line control circuit 2 exchanges read data / write data with the input / output data conversion circuit 5 via a data input / output line (IO line). The input / output data conversion circuit 5 converts the read multi-value information of the memory cell into binary information for output to the outside, and converts the binary information of the write data input from the outside into the multi-value information of the memory cell. Convert. The input / output data conversion circuit 5 is connected to a data input / output buffer 6 that controls data input / output with the outside. The data writing end detection circuit 4 detects whether or not the data writing has ended.

  2 and 3 show specific configurations of the memory cell array 1 and the bit line control circuit 2. The memory cells M1 to M8 and the select transistors S1 and S2 constitute a NAND cell. One end of the NAND cell is connected to the bit line BL, and the other end is connected to the common source line Vs. The selection gates SG1 and SG2 and the control gates CG1 to CG8 are shared by a plurality of NAND cells, and the memory cells sharing one control gate constitute a page. The memory cell stores data at the threshold value Vt. When Vt is 0 V or less, “0” data, when Vt is 0 V or more and 1.5 V or less, “1” data, Vt is 1.5 V or more and power supply voltage or less. In this case, it is stored as “2” data. One memory cell has three states, and two memory cells can be combined in nine ways. Of these, eight combinations are used to store 3-bit data in two memory cells. In this embodiment, 3-bit data is stored in a set of two adjacent memory cells sharing a control gate. The memory cell array 1 is formed on a dedicated p-well.

  The clock synchronous inverters CI1, CI2, CI3, and CI4 constitute a flip-flop, and latch write / read data. They also operate as sense amplifiers. The flip-flop composed of the clock synchronous inverters CI1 and CI2 latches “whether“ 0 ”is written,“ 1 ”or“ 2 ”is written” ”as write data information, and the memory cell“ Whether “0” information is held or “1” or “2” information is held ”is latched as read data information. The flip-flop composed of the clock synchronous inverters CI3 and CI4 latches “1” or “2” write ”as write data information, and the memory cell is“ 2 ”. Whether information is held or “0” or “1” is held ”is latched as read data information.

  Among the n-channel MOS transistors, Qn1 transfers the voltage VPR to the bit line when the precharge signal PRE becomes "H". In Qn2, the bit line connection signal BLC becomes "H" to connect the bit line and the main bit line control circuit. Qn3 to Qn6 and Qn9 to Qn12 selectively transfer the voltages VBLH, VBLM, and VBLL to the bit lines in accordance with the data latched by the flip-flop. Qn7 and Qn8 connect the flip-flop and the bit line when the signals SAC2 and SAC1 become "H", respectively. Qn13 is provided for detecting whether or not the data for one page latched in the flip-flop is all the same. Qn14, Qn15 and Qn16, Qn17 are respectively connected to the corresponding flip-flops and data input / output lines IOA, IOB by the column selection signals CSL1, CSL2 being "H".

  In FIG. 3, the inverter portion is omitted as shown in FIG. 19A, but this has the circuit configuration shown in FIG. 19B.

  Next, the operation of the thus configured EEPROM will be described with reference to FIGS. 4 shows the timing of the read operation, FIG. 5 shows the timing of the write operation, and FIG. 6 shows the timing of the verify read operation. In either case, the control gate CG4 is selected as an example.

  A read operation is performed in two basic cycles. In the first read cycle, first, the voltage VPR becomes the power supply voltage Vcc and the bit line is precharged, and the precharge signal PRE becomes “L” and the bit line is floated. Subsequently, the selection gates SG1 and SG2, and the control gates CG1 to CG3 and CG5 to CG8 are set to Vcc. At the same time, the control gate CG4 is set to 1.5V. Only when the Vt of the selected memory cell is 1.5 V or higher, that is, only when data “2” is written, the bit line is held at the “H” level.

  Thereafter, the sense activation signals SEN2 and SEN2B become "L" and "H", respectively, and the latch activation signals LAT2 and LAT2B become "L" and "H", respectively, and are constituted by clock synchronous inverters CI3 and CI4. The flip-flop that is reset is reset. The signal SAC2 becomes "H" and the flip-flop composed of the clock synchronous inverters CI3 and CI4 and the bit line are connected. First, the sense activation signals SEN2 and SEN2B become "H" and "L", respectively. After the bit line potential is sensed, the latch activation signals LAT2 and LAT2B become “H” and “L”, respectively, and “2” data is supplied to the flip-flop formed by the clock synchronous inverters CI3 and CI4. Information of “1” or “0” data ”is latched.

  The second read cycle is the same as the first read cycle, the voltage of the selection control gate CG4 is 0V instead of 1.5V, signals SEN1, SEN1B, LAT1 and LAT1B, instead of the signals SEN2, SEN2B, LAT2, LAT2B and SAC2 The difference is that SAC1 is output. Therefore, in the second read cycle, the information “0”, “1” or “2” data ”is latched in the flip-flop formed by the clock synchronous inverters CI1 and CI2.

  The data written in the memory cell is read by the two read cycles described above.

  Prior to data writing, the data in the memory cell is erased, and the threshold value Vt of the memory cell is 0 V or less. Erasing is performed with the p-well, common source line Vs and select gates SG1 and SG2 set to 20V, and control gates CG1 to CG8 set to 0V.

  In the write operation, first, the precharge signal PRE becomes “L” and the bit line is floated. The selection gate SG1 is set to Vcc, and the control gates CG1 to CG8 are set to Vcc. Select gate SG2 is at 0V during the write operation. At the same time, the signals VRFY1, VRFY2, FIM and FIH become Vcc. In the case of writing “0”, the data is latched in the flip-flop composed of the clock synchronous inverters CI1 and CI2 so that the output of the clock synchronous inverter CI1 becomes “H”. Charged by Vcc. In the case of “1” or “2” writing, the bit line is 0V.

  Subsequently, the selection gate SG1, the control gates CG1 to CG8, the signal BLC, the signal VRFY1 and the voltage VSA are 10V, the voltage VBLH is 8V, and the voltage VBLM is 1V. In the case of writing “1”, since the data is latched in the flip-flop composed of the clock synchronous inverters CI3 and CI4 so that the output of the clock synchronous inverter CI3 becomes “H”, the bit line BL 1V is applied to. When “2” is written, the bit line is 0V, and when “0” is written, 8V. Thereafter, the selected control gate CG4 is set to 20V.

  In the case of “1” or “2” writing, electrons are injected into the charge storage layer of the memory cell due to the potential difference between the bit line BL and the control gate CG4, and the threshold value of the memory cell rises. In the case of “1” writing, since the amount of charge to be injected into the charge storage layer of the memory cell has to be reduced compared to “2” writing, the bit line BL is set to 1 V and the potential difference from the control gate CG4 is set. Relaxed to 19V. However, this can be done without reducing the potential difference. When "0" is written, the threshold value of the memory cell is not effectively changed by the bit line voltage 8V.

  At the end of the write operation, first, the selection gate SG1 and the control gates CG1 to CG8 are set to 0V, and the voltage 8V of the bit line BL when "0" is written is reset to 0V with a delay. This is because if this order is reversed, a state of “2” or “1” write operation is temporarily created, and wrong data is written when “0” is written.

  After the write operation, verify read is performed because the write state of the memory cell is confirmed and additional write is performed only to the memory cell that is insufficiently written. During the verify read, the voltage VBLH is Vcc, VBLL is 0V, and FIM is 0V.

  The verify read is executed from two basic cycles. This basic cycle is similar to the second read cycle. The difference is that the voltage of the selected control gate CG4 and the signals VRFY1, VRFY2, and FIH are output (only VRFY1 in the first verify read cycle). The signals VRFY1, VRFY2, and FIH are the signals SEN1, SEN1B, LAT1, and LAT1B, which are "L", "H", "L", and "LAT", respectively, after the selection gates SG1 and SG2 and the control gates CG1 to CG8 are reset to 0V. Output before H ”. In other words, after the potential of the bit line is determined by the threshold value of the memory cell, it is before the flip-flop composed of the clock synchronous inverters CI1 and CI2 is reset. The voltage of the selected control gate CG4 is 2V (first cycle), 0.5V (second cycle) corresponding to 1.5V (first cycle) and 0V (second cycle) at the time of reading, The threshold is increased to ensure a threshold margin of 0.5V.

  Here, the data latched in the flip-flop composed of clock synchronous inverters CI1, CI2 (data1) and the data latched in the flip-flop composed of clock synchronous inverters CI3, CI4 (data2) The voltage of the bit line BL determined by the threshold value of the selected memory cell will be described. data1 controls whether “0” write, “1” or “2” write is performed. Qn3 is in the “ON” state for “0” write, and Qn6 is set for “1” or “2” write. “ON” state. Data 2 controls ““ 1 ”writing or“ 2 ”writing”. In the case of “1” writing, Qn 10 is in the “ON” state, and in the case of “2” writing, Qn 11 is in the “ON” state.

  In the first verify read cycle when “0” data is written (initial write data is “0”), the data in the memory cell is “0”. Therefore, when the control gate CG4 becomes 2V, the bit line potential is “ L ". Thereafter, the signal VRFY1 becomes "H", so that the bit line BL becomes "H".

  In the first cycle of verify read when “1” data is written (initial write data is “1”), the memory cell data should be “1”, so the threshold value of the memory cell is 1.5 V or less. When the control gate CG4 becomes 2V, the bit line potential becomes "L" by the memory cell. After that, when the signal VRFY1 becomes "H", if "1" writing is sufficient and data1 indicates "0" writing, the bit line BL is "H" ((1) in FIG. 6). The line BL becomes “L” ((2) in FIG. 6).

  In the first verify read cycle when “2” data is written (initial write data is “2”), if the data in the selected memory cell is not “2” (“2” write is insufficient), the control gate CG4 When the voltage becomes 2 V, the bit line potential becomes “L” by the memory cell ((5) in FIG. 6). When the selected memory cell is sufficiently “2” written, the bit line potential remains “H” even when the control gate CG4 becomes 2V ((3) and (4) in FIG. 6). FIG. 6 (3) shows a case where “2” writing is already sufficient and data1 indicates “0” writing. In this case, when the signal VRFY1 becomes "H", the bit line BL is recharged by the voltage VBH.

  In the second verify read second cycle when “0” data is written (initial write data is “0”), the data in the memory cell is “0”. Therefore, when the control gate CG4 becomes 0.5 V, the bit line potential is set by the memory cell. Becomes “L”. Thereafter, the signal line VRFY1 becomes "H", so that the bit line BL becomes "H".

  In the second verify read second cycle when “1” data is written (initial write data is “1”), if the data of the selected memory cell is not “1” (“1” is insufficiently written), the control gate CG4 When the voltage reaches 0.5 V, the bit line potential becomes “L” by the memory cell ((8) in FIG. 6). When the selected memory cell is sufficiently “1” written, the bit line potential remains “H” even when the control gate CG4 becomes 0.5 V ((6) and (7) in FIG. 6). FIG. 6 (6) shows a case where “1” writing is already sufficient and data1 indicates “0” writing. In this case, when the signal VRFY1 becomes "H", the bit line BL is recharged by the voltage VBH.

  In the second cycle of verify read when “2” data is written (initial write data is “2”), the memory cell data should be “2”. For example, even if “2” writing is sufficient or insufficient, the bit line potential remains “H” even when the control gate CG4 becomes 0.5 V ((9) (10) in FIG. 6). When “2” writing is insufficient and the threshold value of the memory cell is 0.5 V or less, the bit line becomes “L” ((11) in FIG. 6).

  Thereafter, when the signals VRFY1, VRFY2, and FIH become "H", "2" writing is sufficient and data1 indicates "0" writing, the bit line BL is "H" ((9) in FIG. 6). Otherwise, the bit line BL becomes “L” ((10) (11) in FIG. 6).

By this verify read operation, rewrite data is set as shown in the following (Table 1) from the write data and the write state of the memory cell.

As can be seen from (Table 1), “1” write is performed again only for the memory cells that are insufficiently written “1”, and “2” is rewritten only for the memory cells that are insufficiently written “2”. . When data writing is sufficient in all memory cells, Qn13 of all columns is turned “OFF”, and data writing end information is output by a signal PENDB.

  FIG. 7 shows the data input / output operation timing, where (a) is the data input timing and (b) is the data output timing. After three cycles of data input from the outside, the input / output data conversion circuit 5 generates and inputs data to be input to the bit line control circuit 2. Data (X1, X2, X3) for 3 bits from the outside is converted into data (Y1, Y2) of two memory cells, and is effectively converted by the clock synchronous inverters CI1, CI2 of the bit line control circuit 2. Conversion data is set via the data input / output lines IOA and IOB in the register R2 including the register R1 and CI3 and CI4. The read data latched in the registers R1 and R2 is transferred to the input / output data conversion circuit 5 via the data input / output lines IOA and IOB, converted and output. The column selection signals CSL1i and CSL2i shown in FIG. 3 can be made the same signal, and instead, IOA and IOB can be divided into two systems and two registers in the same column can be easily accessed simultaneously, thereby shortening the access time. It is effective for this purpose.

The following (Table 2) shows three bits of data (X1, X2, X3) from the outside at the time of data input, two data (Y1, Y2) of memory cells and registers R1, Y2 corresponding to Y1, Y2, respectively. The relationship of R2 data is shown.

The register data is expressed by the voltage level of the input / output line IOA at the time of data transfer. The data input / output line IOB is omitted because it is an inverted signal of IOA. The following (Table 3) is that at the time of data output.

In this embodiment, for the same data, the IOA level at the time of input and the IOA level at the time of output are inverted.

  Since one of the nine combinations of the two data (Y1, Y2) of the memory cell is left, it can be used for file management information such as pointer information. Here, the pointer information is made to correspond to the cell data (Y1, Y2) = (2, 2).

  FIG. 8 shows the concept of a page which is a unit of data writing when viewed from a microprocessor or the like that controls the EEPROM. Here, one page is N bytes, and an address (logical address) as viewed from a microprocessor or the like is displayed. For example, when write data is input only in the area 1 (logical addresses 0 to n), there is no problem because (X1, X2, X3) is always provided if n = 3m + 2 (m = 0, 1, 2,...). . When n = 3 m, only X1 is input. Therefore, X2 = 0 and X3 = 0 are generated in the EEPROM and (X1, X2, X3) is input to the input / output data conversion circuit 5. When n = 3m + 1, X3 = 0 is generated internally. The same applies when n is equal to N.

  When data is written to area 1 (all the write data in area 2 is “0”), when data is additionally written to area 2, the portion of region 1 is read and the portion of region 2 is written to that data. You can add additional data. Alternatively, the part of area 1 is read out, and if the first address of area 2 is n + 1 = 3m, all the data in area 1 is “0”, and if n + 1 = 3m + 2, the data of addresses n−1 and n are addressed as X1 and X2. In addition to the n + 1 data X3, all the data up to the address n-2 in the area 1 is "0". When n + 1 = 3m + 1, the data at the address n is added to the data X2 and X3 at the addresses n + 1 and n + 2 as X1. All data up to the address n−1 may be “0”. These operations can be easily performed automatically in the EEPROM. The relationship between (X1, X2, X3) and (Y1, Y2) is established as shown in (Table 2) and (Table 3) so that this additional data can be written. The relationship between (X1, X2, X3) and (Y1, Y2) shown in (Table 2) and (Table 3) is one example and is not limited to this. Also, additional data can be written in the same manner even if the area is three or more.

  FIG. 9A shows a data writing algorithm. After the data load, the write, verify read and write end detection operations are repeated. The dotted line is automatically performed in the EEPROM.

  FIG. 9B shows an additional data writing algorithm. After reading and data loading, verify read, write end detection and write operation are repeated. The dotted line is automatically performed in the EEPROM. The reason why the verify read is performed after the data load is to prevent the write from being performed where “1” or “2” has already been written. Otherwise, overwriting may occur.

  FIG. 10 shows the write characteristics of the threshold value of the memory cell in the thus configured EEPROM. A memory cell to which “1” data is written and a memory cell to which “2” data is written are simultaneously written, and the writing time is controlled independently.

Table 4 below shows the potential of each part of the memory cell array at the time of erasing, writing, reading, and verify reading.

  FIG. 11 shows a specific configuration of the memory cell array 1 and the bit line control circuit 2 of the NOR cell type EEPROM according to the second embodiment of the present invention. Only the memory cell M10 constitutes a NOR type cell. One end of the NOR type cell is connected to the bit line BL, and the other end is connected to the common ground line. The memory cells M sharing one control gate WL constitute a page. The memory cell M stores data at the threshold value Vt. When Vt is Vcc or higher, “0” data, when Vt is Vcc or lower and 2.5 V or higher, “1” data, Vt is 2.5 V or lower and 0 V or higher. In this case, it is stored as “2” data. One memory cell has three states, and two memory cells can be combined in nine ways. Of these, eight combinations are used to store 3-bit data in two memory cells. In this embodiment, 3-bit data is stored in a set of two adjacent memory cells sharing a control gate.

  The clock synchronous inverters CI5 and CI6 and CI7 and CI8 constitute flip-flops, respectively, and latch write / read data. It also operates as a sense amplifier. The flip-flop composed of the clock synchronous inverters CI5 and CI6 latches “whether“ 0 ”is written,“ 1 ”or“ 2 ”is written” ”as write data information, and the memory cell“ Whether “0” information is held or “1” or “2” information is held ”is latched as read data information. The flip-flop composed of clock synchronous inverters CI7 and CI8 latches “1” or “2” write ”as write data information, and the memory cell is“ 2 ”. Whether information is held or “0” or “1” is held ”is latched as read data information.

  Among the n-channel MOS transistors, Qn18 transfers the voltage VPR to the bit line when the precharge signal PRE becomes “H”. In Qn19, the bit line connection signal BLC becomes “H” to connect the bit line and the main bit line control circuit. Qn20 to Qn23 and Qn25 to Qn28 selectively transfer voltages VBLH, VBLM, and 0V to the bit lines in accordance with the data latched in the flip-flop. Qn24 and Q29 connect the flip-flop and the bit line when the signals SAC2 and SAC1 become "H", respectively. Qn30 is provided for detecting whether or not the data for one page latched in the flip-flop is all the same. In Qn31, Qn32 and Qn33, Qn34, the column selection signals CSL1, CSL2 become "H", respectively, and the corresponding flip-flops and the data input / output lines IOA, IOB are selectively connected.

  Next, the operation of the thus configured EEPROM will be described with reference to FIGS. 12 shows the timing of the read operation, FIG. 13 shows the timing of the write operation, and FIG. 14 shows the timing of the verify read operation.

  A read operation is performed in two basic cycles. In the first read cycle, first, the voltage VPR becomes the power supply voltage Vcc and the bit line is precharged, and the precharge signal PRE becomes “L” and the bit line is floated. Subsequently, the control gate WL is set to 2.5V. Only when Vt of the selected memory cell is 2.5 V or less, that is, only when data “2” is written, the bit line becomes “L” level.

  Thereafter, the sense activation signals SEN2 and SEN2B become "L" and "H", respectively, and the latch activation signals LAT2 and LAT2B become "L" and "H", respectively, and are constituted by clock synchronous inverters CI7 and CI8. The flip-flop that is reset is reset. The signal SAC2 becomes "H" and the flip-flop constituted by the clock synchronous inverters CI7 and CI8 and the bit line are connected. First, the sense activation signals SEN2 and SEN2B become "H" and "L", respectively. After the bit line potential is sensed, the latch activation signals LAT2 and LAT2B become “H” and “L”, respectively, and “2” data is supplied to the flip-flop constituted by the clock synchronous inverters CI7 and CI8. Information of “1” or “0” data is latched.

  The second read cycle is the same as the first read cycle, and the voltage of the selection control gate WL is Vcc instead of 2.5V. Instead of the signals SEN2, SEN2B, LAT2, LAT2B, SAC2, signals SEN1, SEN1B, LAT1, LAT1B, The difference is that SAC1 is output. Accordingly, in the second read cycle, the information “0 data,“ 1 ”or“ 2 ”data” is latched in the flip-flop formed by the clock synchronous inverters CI5 and CI6.

  The data written in the memory cell is read by the two read cycles described above.

  Prior to data writing, the data in the memory cell is erased, and the threshold value Vt of the memory cell is equal to or higher than Vcc. Erasing is performed by setting the control gate WL to 20V and the bit line to 0V.

  In the write operation, first, the precharge signal PRE becomes “L” and the bit line is floated. The signals VRFY1, VRFY2, FIM, and FIL become Vcc. In the case of writing “2”, the data is latched so that the output of the clock synchronous inverter CI5 becomes “H” in the flip-flop composed of the clock synchronous inverters CI5 and CI6. 0V. In the case of writing “1” or “2”, the bit line is charged to Vcc.

  Subsequently, the signals BLC, VRFY2, FIM, FIL and the voltage VSA are 10V, the voltage VBLH is 8V, and the voltage VBLM is 7V. In the case of writing “1”, the data is latched in the flip-flop composed of the clock synchronous inverters CI7 and CI8 so that the output of the clock synchronous inverter CI7 becomes “H”. 7V is applied to. In the case of “2” writing, the bit line is 8V, and in the case of “0” writing, it is 0V. Thereafter, the selected control gate WL is set to −12V.

  In the case of “1” or “2” writing, electrons are released from the charge storage layer of the memory cell due to the potential difference between the bit line BL and the control gate WL, and the threshold value of the memory cell decreases. In the case of “1” writing, the amount of charge to be released from the charge storage layer of the memory cell has to be reduced as compared with “2” writing, so the bit line BL is set to 7 V and the potential difference from the control gate WL is set. Relaxed to 19V. When "0" is written, the threshold value of the memory cell is not effectively changed by the bit line voltage 0V.

  After the write operation, verify read is performed because the write state of the memory cell is confirmed and additional write is performed only to the memory cell that is insufficiently written. During the verify read, the voltage VBLH is Vcc and the FIM is 0V.

  The verify read is executed from two basic cycles. This basic cycle is similar to the first read cycle. The difference is that the voltage of the selected control gate WL and the signals VRFY1, VRFY2, and FIH are output (only VRFY1 in the first verify read cycle). The signals VRFY1, VRFY2, and FIH are output after the control gate WL is reset to 0V and before the signals SEN1, SEN1B, LAT1, and LAT1B become “L”, “H”, “L”, and “H”, respectively. The In other words, after the bit line potential is determined by the threshold value of the memory cell, it is before the flip-flop composed of the clock synchronous inverters CI5 and CI6 is reset. The voltage of the selected control gate WL is 2V (first cycle) and 4V (second cycle) corresponding to 2.5 V (first cycle) and Vcc (second cycle) at the time of reading. The value is lowered to ensure a value margin.

  Here, the data latched in the flip-flop composed of clock synchronous inverters CI5 and CI6 (data1) and the data latched in the flip-flop composed of clock synchronous inverters CI7 and CI8 (data2) The voltage of the bit line BL determined by the threshold value of the selected memory cell will be described. Data1 controls whether “0” write, “1” or “2” write ”. In the case of“ 0 ”write, Qn20 is in the“ ON ”state, and in the case of“ 1 ”or“ 2 ”write, Qn23 is “ON” state. Data 2 controls ““ 1 ”write or“ 2 ”write”. In the case of “1” write, Qn 26 is in the “ON” state, and in the case of “2” write, Qn 27 is in the “ON” state.

  In the first verify read cycle when “0” data is written (initial write data is “0”), the data in the memory cell is “0”, so that the bit line potential is “H” even when the control gate WL becomes 2V. " Thereafter, the signal VRFY1 becomes "H", so that the bit line BL becomes "L".

  In the first verify read cycle when “1” data is written (initial write data is “1”), the memory cell threshold should be 2.5 V or more because the data in the memory cell should be “1”. Even when the control gate WL becomes 2V, the bit line potential remains “H”. Thereafter, when the signal VRFY1 becomes "H", "1" writing is sufficient and data1 indicates "0" writing, the bit line BL is "L" ((2) in FIG. 14), otherwise the bit The line BL becomes “H” ((1) in FIG. 14).

  In the first cycle of verify read when “2” data is written (initial write data is “2”), if the data of the selected memory cell is not “2” (“2” write is insufficient), the control gate WL Even if it becomes 2V, the bit line potential is "H" ((3) in FIG. 14). When the selected memory cell is sufficiently “2” written, when the control gate WL becomes 2V, the bit line potential becomes “L” by the memory cell ((4) and (5) in FIG. 14). (5) in FIG. 14 is a case where “2” writing is already sufficient and data1 indicates “0” writing. In this case, the bit line BL is grounded when the signal VRFY1 becomes "H".

  In the second verify read cycle when “0” data is written (initial write data is “0”), the data in the memory cell is “0”. Therefore, even if the control gate CG4 becomes 4V, the bit line potential is “H”. ". Thereafter, the signal line VRFY1 becomes "H", so that the bit line BL becomes "L".

  In the second verify read second cycle when “1” data is written (initial write data is “1”), if the data in the selected memory cell is not “1” (“1” is insufficiently written), the control gate WL Even if it becomes 4V, the bit line potential is "H" ((6) in FIG. 14). When the selected memory cell is sufficiently “1” written, the bit line potential is set to “L” by the memory cell when the control gate WL becomes 4 V ((7) and (8) in FIG. 14). (8) in FIG. 14 is a case where “1” writing is already sufficient and data1 indicates “0” writing. In this case, the bit line BL is grounded when the signal VRFY1 becomes "H".

  In the second verify read second cycle when “2” data is written (initial write data is “2”), the memory cell data should be “2”. Whether the 2 "write is sufficient or insufficient, the bit line potential becomes" L "when the control gate WL becomes 4V ((10) and (11) in FIG. 14). When “2” writing is insufficient and the threshold value of the memory cell is 4 V or more, the bit line becomes “H” ((9) in FIG. 14).

  After that, when the signals VRFY1, VRFY2, and FIH become "H", "2" writing is already sufficient and data1 indicates "0" writing, the bit line BL is "L" ((11) in FIG. 14). Otherwise, the bit line BL becomes "H" ((9) (10) in FIG. 14).

  By this verify read operation, the rewrite data is set as shown in Table 1 from the write data and the write state of the memory cell as in the first embodiment. When data writing is sufficient in all memory cells, Qn30 of all columns is turned “OFF”, and data writing end information is output by the signal PENDB.

  The data input / output operation timing, data write algorithm, additional data write algorithm, and the like are the same as those in the first embodiment as shown in FIGS.

  FIG. 15 shows the threshold value write characteristics of the memory cell in the thus configured EEPROM. A memory cell to which “1” data is written and a memory cell to which “2” data is written are simultaneously written, and the writing time is controlled independently.

Table 5 below shows the potential of each part of the memory cell array at the time of erasing, writing, reading, and verify reading.

  The circuits shown in FIGS. 3 and 11 can be modified as shown in FIGS. 16 and 17, for example. In FIG. 16, Qn3 and Qn4 seen in FIG. 2 are replaced with p-channel MOS transistors Qp1 and Qp2. In FIG. 17, Qn22, Qn23, Qn25 to Qn28 shown in FIG. 11 are replaced with p-channel MOS transistors Qp3 to Qp8. By doing so, it is possible to prevent a drop in the voltage that can be transferred due to the threshold value of the n-channel MOS transistor. In this example, the voltage VSA may be raised to 8 V at the time of writing, and the breakdown voltage of the transistors constituting the circuit is lowered. be able to. 16 is an inverted signal of VRFY1 in FIGS. 2 and 3, and VRFY2B, FILB, and FIMB in FIG. 17 are inverted signals of VRFY2, FIL, and FIM in FIG. 11, respectively.

  Although the additional data writing has been described with reference to FIG. 8, for example, dividing one page in order to facilitate additional data writing as shown in FIG. 18 is one effective method. In this example, one area is constituted by 22 memory cells for every 32 logical addresses. This makes it easy to write additional data in units of areas. That is, when additional data is written in the area 2, all the write data in the area other than the area 2 is set to “0”, and the data writing algorithm shown in FIG. The size of one area may be other than that shown in FIG.

The block diagram which shows schematic structure of EEPROM concerning 1st and 2nd embodiment. FIG. 3 is a diagram illustrating a specific configuration of a memory cell array according to the first embodiment. FIG. 3 is a diagram illustrating a specific configuration of a bit line control circuit according to the first embodiment. FIG. 3 is a timing chart showing a read operation in the first embodiment. FIG. 5 is a timing chart showing a write operation in the first embodiment. FIG. 5 is a timing chart showing a verify read operation in the first embodiment. FIG. 6 is a timing chart showing data input / output operations in the first and second embodiments. The figure which shows the concept of the page of the write / read unit in 1st and 2nd embodiment. The figure which shows the data writing and additional data writing algorithm in 1st, 2nd embodiment. FIG. 4 is a diagram showing a write characteristic of a memory cell in the first embodiment. FIG. 10 is a diagram illustrating a configuration of a memory cell array and a bit line control circuit according to a second embodiment. FIG. 9 is a timing chart showing a read operation in the second embodiment. FIG. 10 is a timing chart showing a write operation in the second embodiment. FIG. 10 is a timing chart showing a verify read operation in the second embodiment. FIG. 10 is a diagram showing a write characteristic of a memory cell in a second embodiment. The figure which shows the modification of the bit line control circuit in 1st Embodiment. FIG. 10 is a diagram showing a modification of the bit line control circuit according to the second embodiment. The figure which shows the unit of the additional data write in 1st and 2nd embodiment. The figure which shows the specific structural example of the inverter part shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Memory cell array 2 ... Bit line control circuit 3 ... Column decoder 4 ... Data write completion detection circuit 5 ... Input / output data conversion circuit 6 ... Data input / output buffer 7 ... Word line drive circuit 8 ... Row decoder

Claims (4)

It is a plurality of memory cells that can be connected in series with three storage conditions to allow electrical rewriting, the NAND cell unit having one end connected to the bit line,
A write voltage is applied to a control gate of a memory cell selected for writing in the NAND cell unit, and a voltage intermediate between 0 V and the write voltage is applied to a control gate of a memory cell other than the selected memory cell And a write circuit for applying at least three types of write bit line voltages according to write data to the bit line ,
A non-volatile semiconductor memory device comprising:
The write circuit includes first and second flip-flops whose storage states are set according to the write data;
The on / off operation is performed according to the storage state of the first flip-flop, and one of the three types of write bit line voltages or the other two determined by the second flip-flop. First and second MOS transistors for supplying a write bit line voltage of a type to the bit line;
A third and a fourth circuit that perform on / off operation according to the storage state of the second flip-flop, and supply one of the other two types of write bit line voltages to the bit line. With MOS transistors,
The intermediate voltage is applied to a control gate of a memory cell other than the selected memory cell, and after applying one of the three types of write bit line voltages to the bit line, the write voltage is applied to the bit line. A nonvolatile semiconductor memory device, which is applied to a control gate of a selected memory cell.   2. The nonvolatile semiconductor memory according to claim 1, wherein the write circuit applies a power supply voltage to a control gate of a memory cell other than the selected memory cell before applying the intermediate voltage. apparatus. It is a plurality of memory cells that can be connected in series with three storage conditions to allow electrical rewriting, the NAND cell unit having one end connected to the bit line,
A write voltage is applied to a control gate of a memory cell selected for writing in the NAND cell unit, and a voltage intermediate between 0 V and the write voltage is applied to a control gate of a memory cell other than the selected memory cell And a write circuit for applying at least three types of write bit line voltages according to write data to the bit line ,
A non-volatile semiconductor memory device comprising:
The write circuit includes first and second flip-flops whose storage states are set according to the write data;
The on / off operation is performed according to the storage state of the first flip-flop, and one of the three types of write bit line voltages or the other two determined by the second flip-flop. First and second MOS transistors for supplying a write bit line voltage of a type to the bit line;
A third and a fourth circuit that perform on / off operation according to the storage state of the second flip-flop, and supply one of the other two types of write bit line voltages to the bit line. With MOS transistors,
The intermediate voltage is applied to the control gates of the selected memory cell and other memory cells, and one of the three types of write bit line voltages is applied to the bit line, and then the write A nonvolatile semiconductor memory device, wherein a voltage is applied to a control gate of the selected memory cell.   4. The nonvolatile circuit according to claim 3, wherein the write circuit applies a power supply voltage to the control gates of the selected memory cell and other memory cells before applying the intermediate voltage. Semiconductor memory device.

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