JP4059570B2 - プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 - Google Patents

プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 Download PDF

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Publication number
JP4059570B2
JP4059570B2 JP20581998A JP20581998A JP4059570B2 JP 4059570 B2 JP4059570 B2 JP 4059570B2 JP 20581998 A JP20581998 A JP 20581998A JP 20581998 A JP20581998 A JP 20581998A JP 4059570 B2 JP4059570 B2 JP 4059570B2
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plasma
magnetic field
chamber
processing
high frequency
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JPH11251301A5 (https=
JPH11251301A (ja
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剛平 川村
靖浩 堀池
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
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  • Drying Of Semiconductors (AREA)
JP20581998A 1997-07-08 1998-07-07 プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 Expired - Fee Related JP4059570B2 (ja)

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Application Number Priority Date Filing Date Title
JP20581998A JP4059570B2 (ja) 1997-07-08 1998-07-07 プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-196378 1997-07-08
JP19637897 1997-07-08
JP20581998A JP4059570B2 (ja) 1997-07-08 1998-07-07 プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法

Publications (3)

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JPH11251301A JPH11251301A (ja) 1999-09-17
JPH11251301A5 JPH11251301A5 (https=) 2005-10-20
JP4059570B2 true JP4059570B2 (ja) 2008-03-12

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JP20581998A Expired - Fee Related JP4059570B2 (ja) 1997-07-08 1998-07-07 プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法

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JPH11251301A (ja) 1999-09-17

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