JP4059570B2 - プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 - Google Patents
プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 Download PDFInfo
- Publication number
- JP4059570B2 JP4059570B2 JP20581998A JP20581998A JP4059570B2 JP 4059570 B2 JP4059570 B2 JP 4059570B2 JP 20581998 A JP20581998 A JP 20581998A JP 20581998 A JP20581998 A JP 20581998A JP 4059570 B2 JP4059570 B2 JP 4059570B2
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- Prior art keywords
- plasma
- magnetic field
- chamber
- processing
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001020 plasma etching Methods 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 54
- 239000007789 gas Substances 0.000 claims description 78
- 238000005530 etching Methods 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 10
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20581998A JP4059570B2 (ja) | 1997-07-08 | 1998-07-07 | プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9-196378 | 1997-07-08 | ||
| JP19637897 | 1997-07-08 | ||
| JP20581998A JP4059570B2 (ja) | 1997-07-08 | 1998-07-07 | プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11251301A JPH11251301A (ja) | 1999-09-17 |
| JPH11251301A5 JPH11251301A5 (enExample) | 2005-10-20 |
| JP4059570B2 true JP4059570B2 (ja) | 2008-03-12 |
Family
ID=26509715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20581998A Expired - Fee Related JP4059570B2 (ja) | 1997-07-08 | 1998-07-07 | プラズマエッチング装置およびプラズマエッチング方法、ならびにプラズマ生成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4059570B2 (enExample) |
-
1998
- 1998-07-07 JP JP20581998A patent/JP4059570B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11251301A (ja) | 1999-09-17 |
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