JP4044108B2 - Method for dividing semiconductor wafer - Google Patents

Description

  The present invention relates to a method of dividing a semiconductor wafer individually.

  Conventional division of a semiconductor wafer has been performed as follows.

  FIG. 12 is a diagram showing a conventional semiconductor wafer dividing process, and FIG. 13 is a diagram showing a conventional semiconductor wafer dividing state.

  As shown in FIG. 13, the semiconductor wafer 1 is fixed to the chuck stage 4 of the semiconductor element dividing apparatus with the adhesive tape 2 in a state where the semiconductor wafer 1 is attached onto the adhesive tape 2 coated with the adhesive 3. The chuck stage 4 is formed with an intake hole 4A, which adsorbs the adhesive tape 2 with a negative pressure at the bottom.

  The semiconductor wafer 1 is divided by advancing the chuck stage 4 leftward while rotating the cutting blade 5 in the rotation direction 6 indicated by the arrow.

  Hereinafter, the semiconductor wafer dividing step will be described in more detail.

  (1) First, as shown in FIG. 12 (a), the semiconductor wafer 1 bonded to the adhesive tape 2 with the adhesive 3 is set on the chuck stage 4 and the cutting blade 5 is made to correspond.

  (2) Next, as shown in FIG. 12B, the lowest points of the cutting blade 5 rotating at a high speed in the rotation direction 6 at a speed of about 20,000 to 40,000 rpm are the adhesive tape 2 and the semiconductor wafer 1. It moves to the position of ± 50 μm from the boundary surface.

  (3) In this state, as shown in FIG. 12C, the chuck stage 4 moves on the cutting surface in a direction (down cut) 7 that coincides with the rotation direction 6 of the cutting blade 5, thereby causing a semiconductor wafer. 1 division is performed. Here, the down cut state is shown in FIG.

  (4) Next, the lowest point of the cutting blade 5 moves above the surface of the semiconductor wafer 1. Then, the chuck stage 4 moves to the initial position of the cutting blade 5 (position shown in FIG. 12A), and the next cutting is performed as shown in FIG. 12D (top view) and FIG. 12E. The position is moved in the depth direction 8 of the semiconductor wafer 1 which is the position, and the process ends.

The semiconductor wafer is divided individually by continuously performing the above series of operations.
None

However, in the conventional method for dividing a semiconductor wafer described above, in particular, a material different from a semiconductor wafer substrate such as a positioning mark and a circuit for electrical property test required for forming a semiconductor element on the surface to be divided of the semiconductor wafer. If the split cycle is repeated,
(1) The cutting blade is clogged, and when the semiconductor wafer is divided, the semiconductor wafer is vibrated, resulting in quality problems such as chipping, chipping and cracking.

  (2) Clogging causes blade spillage and shortens the life of the cutting blade. There was a problem.

  An object of the present invention is to provide a semiconductor wafer dividing method capable of removing the above-mentioned problems, maintaining a high quality of the semiconductor wafer without damaging the cutting blade, and dividing the semiconductor wafer smoothly.

In order to achieve the above object, the present invention provides
The semiconductor wafer on which a wiring material is formed in [1] surfaces, the method of dividing a semiconductor wafer to be divided by the cutting blade rotates, using a first cutting blade having a first blade thickness of the semiconductor wafer Te, a first cutting step of the upper cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material, after this first cutting step, the first blade thin second blade than the thickness A dividing step of further cutting the cut portion in the first cutting step and down-cutting the semiconductor wafer using a second cutting blade having a thickness.

[ 2 ] In the method for dividing a semiconductor wafer according to [1], after the first cutting step, a portion adjacent to the portion of the semiconductor wafer cut in the first cutting step is defined as the semiconductor wafer. It has the 2nd cutting process of carrying out an upper cut only predetermined depth by making the said cutting blade contact.

[3] The method of dividing a semiconductor wafer according to any one of the above [1] or [2], wherein in the first cutting step, the semiconductor wafer is cut, leaving a thickness of 50μm~350μm It is characterized by that.

[ 4 ] In the method of dividing a semiconductor wafer according to any one of [1] to [3], the first cutting blade has a first blade thickness of 40 μm to 150 μm, and the second A cutting blade used in the cutting process has a second blade thickness of 15 μm to 40 μm.

[ 5 ] In the method for dividing a semiconductor wafer according to any one of [1] to [ 4 ], the semiconductor wafer has a first cutting blade and a second cutting blade of 10,000 rpm to 60,000. It is characterized by being cut or divided by rotating at rpm.

The semiconductor wafer on which a wiring material is formed in [6] surface, the method of dividing a semiconductor wafer to be divided by the cutting blade rotates, and fixing the semiconductor wafer on a stage, and fixing the semiconductor wafer moving the stage, the as by uppercut a moving direction of the stage with the cutting blade to be rotated in the reverse direction at the contact portion between the semiconductor wafer the cutting blade to remove said wiring material a first cutting step of cutting the semiconductor wafer by a predetermined depth, after this first cutting step, wherein moving the stage where the semiconductor wafer is fixed, at the contact portion between the semiconductor wafer the cutting edge by down-cut with the cutting blade to be rotated in the direction corresponding to the moving direction of the stage, cutting in said first cutting step Further cutting the portion, and having a a dividing step of dividing the semiconductor wafer.

[ 7 ] The semiconductor wafer dividing method according to [ 6 ], wherein the first cutting step and the dividing step are alternately performed.

[8] In a method of dividing a semiconductor wafer according to any one of the above [6] or [7], after the first cutting step, the portion of the semiconductor wafer which has been cut in the first cutting step It has a 2nd cutting process of carrying out the upper cut of the predetermined depth by moving the said stage which fixed the said semiconductor wafer to the adjacent part.

[9] In the semiconductor wafer dividing method according to any one of [6] to [ 8 ], in the first cutting step, the semiconductor wafer is cut leaving a thickness of 50 μm to 350 μm. It is characterized by that.

[ 10 ] In the semiconductor wafer dividing method according to any one of [ 6 ] to [ 9 ], the semiconductor wafer is cut or divided by the cutting blade having a blade thickness of 25 μm to 150 μm. And

[11] In the semiconductor wafer dividing method according to any one of [6] to [ 9 ], the semiconductor wafer is cut by the cutting blade having a blade thickness of 40 μm to 150 μm in the first cutting step. In the dividing step, the cutting blade is divided by the cutting blade having a blade thickness of 15 μm to 40 μm.

[ 12 ] In the semiconductor wafer dividing method according to any one of [ 6 ] to [ 11 ], the semiconductor wafer is cut or divided by rotating the cutting blade at 10,000 rpm to 60,000 rpm. It is characterized by being.

[ 13 ] In the method for dividing a semiconductor wafer according to any one of [ 6 ] to [ 12 ], the semiconductor wafer is cut or divided while being fixed on the stage via an adhesive tape. It is characterized by that.

[ 14 ] In the semiconductor wafer dividing method according to any one of [ 6 ] to [ 13 ], in the first cutting step, the semiconductor wafer is cut by a cutting blade having an abrasive grain size of 4 μm to 12 μm. In the dividing step, the semiconductor wafer is divided by a cutting blade having an abrasive grain size of 1 μm to 6 μm.

The semiconductor wafer on which a wiring material is formed in [15] surface, the method of dividing a semiconductor wafer to be divided by the cutting blade rotates, and fixing the semiconductor wafer on the stage, by rotating the cutting blade A first cutting step of cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material by moving the stage to which the semiconductor wafer is fixed; and after the first cutting step. , rotating the cutting blade, said by moving the stage where the semiconductor wafer is fixed, further cutting the portion cut in the first cutting step, to have a dividing step for cutting down the semiconductor wafer It is characterized by.

[ 16 ] The semiconductor wafer dividing method according to [ 15 ], wherein the first cutting step and the dividing step are alternately performed.

[17] In a method of dividing a semiconductor wafer according to any one of the above [15] or [16], after the first cutting step, the portion of the semiconductor wafer which has been cut in said first cutting step It has a 2nd cutting process of carrying out the upper cut of the predetermined depth by moving the said stage which fixed the said semiconductor wafer to the adjacent part.

[ 18 ] The method for dividing a semiconductor wafer according to [ 17 ], wherein in the second cutting step, the semiconductor wafer is cut leaving a thickness of 50 μm to 350 μm.

[ 19 ] In the method for dividing a semiconductor wafer according to any one of [ 15 ] to [ 18 ], in the first cutting step, the semiconductor wafer is cut leaving a thickness of 50 μm to 350 μm. It is characterized by that.

[ 20 ] In the semiconductor wafer dividing method according to any one of [ 15 ] to [ 19 ], the semiconductor wafer is cut or divided by the cutting blade having a blade thickness of 25 μm to 150 μm. And

[21] In the method of dividing a semiconductor wafer according to any one of [15] to [ 19 ], the semiconductor wafer is cut by the cutting blade having a blade thickness of 40 μm to 150 μm in the first cutting step. In the dividing step, the cutting blade is divided by the cutting blade having a blade thickness of 15 μm to 40 μm.

[ 22 ] In the semiconductor wafer dividing method according to any one of [ 15 ] to [ 21 ], the semiconductor wafer is cut or divided by rotating the cutting blade at 10,000 rpm to 60,000 rpm. It is characterized by being.

[ 23 ] In the method for dividing a semiconductor wafer according to any one of [ 15 ] to [ 22 ], the semiconductor wafer is cut or divided while being fixed on the stage via an adhesive tape. It is characterized by.

[ 24 ] In the semiconductor wafer dividing method according to any one of [ 15 ] to [ 23 ], in the first cutting step, the semiconductor wafer is cut by a cutting blade having an abrasive grain size of 4 μm to 12 μm. In the dividing step, the semiconductor wafer is divided by a cutting blade having an abrasive grain size of 1 μm to 6 μm.

  According to the present invention, the following effects can be achieved.

  (1) The semiconductor wafer can be kept in high quality and can be divided smoothly without damaging the cutting blade.

  (2) Since the upper cut is performed twice, and finally the down cut is performed, the electrical property test wiring material on the surface side of the semiconductor wafer, which is the cause of the clogging, is removed by the upper cut, and the cutting surface is finally finished. Since the wiring material is processed at the position, chips do not adhere to the blade and clogging does not occur.

  (3) By appropriately setting the cutting blade in the cutting process in relation to the cutting object, it is possible to accurately divide the semiconductor wafer.

The semiconductor wafer on which a wiring material formed on the surface of the present invention, in the method of dividing a semiconductor wafer to be divided by the cutting blade rotates, using a first cutting blade having a first blade thickness of the semiconductor wafer Te, a first cutting step of the upper cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material, after this first cutting step, the first blade thin second blade than the thickness A dividing step of further cutting the cut portion in the first cutting step and down-cutting the semiconductor wafer using a second cutting blade having a thickness.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a sectional view of a semiconductor wafer dividing process showing a first embodiment of the present invention, FIG. 2 is a plan view showing an initial position of a cutting blade in the semiconductor wafer dividing process, and FIG. FIG. 4 is an enlarged sectional view showing a state before the down-cut process in the semiconductor wafer dividing process, and FIG. 5 is a diagram showing the down-cut process in the semiconductor wafer dividing process.

  (1) First, as shown in FIG. 1A, on the wafer chuck stage 14, the semiconductor wafer 11 fixed on the adhesive tape 12 by the adhesive 13 is exposed to the negative pressure [intake hole 14A. (Refer to FIG. 3). Further, for dividing the semiconductor wafer 11, a cutting blade 15 having a blade thickness of 25 μm to 150 μm is rotated at a high speed of 10,000 to 60,000 rpm. This direction of rotation is assumed to be the direction of arrow 16. When viewed in plan, the arrangement is as shown in FIG. In FIG. 2, 17 indicates the depth direction.

  (2) Next, as shown in FIG. 1B, the cutting blade 15 positioned above the surface of the semiconductor wafer 11 moves to a height of +50 μm to 350 μm from the interface between the adhesive tape 12 and the semiconductor wafer 11. . This is to perform the upper cut while leaving the semiconductor wafer 11 at 50 μm to 350 μm.

  (3) Next, the wafer chuck stage 14 holding the semiconductor wafer 11 moves horizontally in the direction opposite to the rotation direction of the cutting blade 15 on the cutting surface, that is, in the right direction 18. That is, an upper cut is performed. The upper cut state is shown in FIG.

  Thus, the cutting blade 15 and the semiconductor wafer 11 are in contact with each other, and the semiconductor wafer 11 is cut from the interface between the semiconductor wafer 11 and the adhesive tape 12 to a position of 50 μm to 350 μm. When the contact (overlapping) portion between the semiconductor wafer 11 and the cutting blade 15 disappears, the wafer chuck stage 14 stops [see FIG. 1 (c)].

  (4) Next, as shown in FIG. 1D, the cutting blade 15 is lowered to a position (−0 μm to −60 μm) lower than the interface between the semiconductor wafer 11 and the adhesive tape 12. This state is shown enlarged in FIG.

  (5) Next, as shown in FIG. 1 (e), the stopped wafer chuck stage 14 horizontally moves in the direction that coincides with the rotational direction 16 of the cutting blade 15 on the cutting surface, that is, in the left direction 19. . That is, a down cut is performed. The down cut state is shown in FIG.

  When the contact (overlapping) portion between the semiconductor wafer 11 and the cutting blade 15 disappears, the wafer chuck stage 14 stops.

  Finally, the cutting blade 15 rises to the position shown in FIG. 1A, and the cutting blade 15 moves in the depth direction 17 shown in FIG. 2, which is the next cutting position, and completes a series of operations.

  The semiconductor wafer is divided by repeatedly executing the above operation.

  As described above, according to the first embodiment, the cutting is performed by alternately performing the upper cut and the down cut. Therefore, the electrical property test wiring material that causes clogging is removed by the upper cut. That is, since the wiring material is processed at the final position in time on the cutting surface, chips do not adhere to the cutting blade.

Therefore, no clogging occurs.
(1) Chips and cracks of the semiconductor wafer are eliminated, and the quality of the chip can be improved.

  (2) Cutting blade wear such as blade spillage due to clogging can be reduced.

  Furthermore, since it is divided by two cutting operations of upper cut and down cut, the chip removal capability can be doubled compared to the current state, and chip adhesion to the wafer surface can be reduced.

  Next, a second embodiment of the present invention will be described.

  FIG. 6 is a sectional view of a semiconductor wafer dividing process showing a second embodiment of the present invention, FIG. 7 is an enlarged side view of the semiconductor wafer dividing process before the first upper cut process, and FIG. 8 is a semiconductor wafer dividing process. The figure which shows the cutting groove by the 1st upper cut in a process, FIG. 9 is the side surface enlarged view before the 1st upper cut process in the division | segmentation process of the semiconductor wafer, FIG. 10 is the 2nd upper in the division | segmentation process of the semiconductor wafer The figure which shows the cutting groove by a cut, FIG. 11 is a figure which shows the cutting groove by the down cut in the division | segmentation process of the semiconductor wafer.

  (1) First, as shown in FIG. 6A, the semiconductor wafer 11 fixed on the adhesive tape 12 with the adhesive 13 is held on the wafer chuck stage 14 by the negative pressure of the wafer chuck stage 14. Yes. Further, for dividing the semiconductor wafer 11, a cutting blade 15 having a blade thickness of 25 μm to 150 μm is rotated at a high speed of 10,000 to 60,000 rpm. This direction of rotation is assumed to be the direction of arrow 16.

  (2) Next, as shown in FIG. 6B, the cutting blade 15 positioned above the surface of the semiconductor wafer 11 moves to a height of +50 μm to 350 μm from the interface between the adhesive tape 12 and the semiconductor wafer 11. To do. This is to perform the upper cut while leaving the semiconductor wafer 11 at 50 μm to 350 μm. The state before the upper cut is shown in FIG. 7 as an enlarged side view.

  (3) Next, the wafer chuck stage 14 holding the semiconductor wafer 11 moves horizontally on the cutting surface in the direction opposite to the rotation direction 16 of the cutting blade 15, that is, in the right direction 18, and the first upper cut I do. The first upper cut state is the same as that shown in FIG.

  That is, the cutting blade 15 and the semiconductor wafer 11 come into contact with each other, and the semiconductor wafer 11 is cut leaving a thickness from the interface between the semiconductor wafer 11 and the adhesive tape 12 to a position of 50 μm to 350 μm. When the contact (overlapping) portion between the semiconductor wafer 11 and the cutting blade 15 disappears, the wafer chuck stage 14 stops (see FIG. 6C).

  (4) Next, as shown in FIG. 6D, the cutting blade 15 rises to a position where it does not contact the semiconductor wafer 11. The cross-sectional shape of the semiconductor wafer 11 taken along the line AA ′ in this state, that is, the shape of the cutting groove 21 by the first upper cut is as shown in FIG.

  (5) Next, as shown in FIG. 6E, the cutting blade 15 is moved so as to cut the position adjacent to the position cut by the first upper cut by the second upper cut. The side surface enlarged view from the cutting blade 15 side is shown as FIG. As is apparent from FIG. 9, the second upper cut position is set at a position adjacent to the first upper cut position.

  (6) Next, the wafer chuck stage 14 holding the semiconductor wafer 11 horizontally moves in the direction opposite to the rotation direction of the cutting blade 15, that is, in the right direction 18 on the cutting surface. That is, the second upper cut is performed. The second upper cut state is the same as that shown in FIG.

  That is, the cutting blade 15 and the semiconductor wafer 11 are in contact with each other, and the semiconductor wafer 11 is cut from the interface between the semiconductor wafer 11 and the adhesive tape 12 to a position of 50 μm to 350 μm. As shown in FIG. 6F, when the contact (overlap) portion between the semiconductor wafer 11 and the cutting blade 15 disappears, the wafer chuck stage 14 stops.

  (7) Next, as shown in FIG. 6 (g), the cutting blade 15 is lowered to a position (−0 μm to −60 μm) lower than the interface between the semiconductor wafer 11 and the adhesive tape 12. The state is the same as that shown enlarged in FIG. Then, as shown in FIG. 10, the cutting groove 22 is formed by the second upper cut.

  (8) Next, as shown in FIG. 6 (h), the wafer chuck stage 14 horizontally moves in the direction that coincides with the rotational direction 16 of the cutting blade 15 on the cutting surface, that is, in the left direction 19. That is, a down cut is performed. The shape of the cutting groove 23 by the down cut is shown in FIG. 11 [a cross-sectional view taken along the line CC ′ in FIG.

  When the contact (overlapping) portion between the semiconductor wafer 11 and the cutting blade 15 disappears, the wafer chuck stage 14 stops.

  Finally, the cutting blade 15 moves up to the position shown in FIG. 6A, and the cutting blade 15 moves in the depth direction 17 shown in FIG. 2, which is the next cutting position, and one series of operations ends.

  The semiconductor wafer is divided by repeatedly executing the above operation.

As described above, according to the second embodiment, the upper cut is performed twice, and finally the down cut is performed. Therefore, the electrical property test wiring material on the surface side of the semiconductor wafer which is the cause of the clogging is used. Since it is removed by upper cutting and the wiring material is processed at the final position on the cutting surface, chips do not adhere to the blade and clogging does not occur. Therefore,
(1) Chips and cracks of the semiconductor wafer are eliminated, and the quality of the chip can be improved.

  (2) Cutting blade clogging due to clogging of cutting blade is eliminated, wear of the cutting blade is reduced, and further, cutting is performed by three cutting operations, two upper cuts and one down cut, so the chip removal capability It can be more than twice the current level.

  (3) Chip adhesion to the semiconductor wafer surface can be reduced.

  Furthermore, according to the second embodiment, the cutting width on the surface of the semiconductor wafer extends to nearly twice the blade thickness, so that electrical defects due to contact between the wafer edge and the wire in the gold wire terminal connection process are reduced.

  The present invention further includes the following examples.

In the first embodiment and the second embodiment, the example in which one line is cut with the same cutting blade has been described. However, the first upper cut and the last down cut are cut with different cutting blades. You can also. More specifically,
(1) The upper cut is performed with a thick cutting blade of 40 μm to 150 μm, and the down cut is performed with a thinner cutting blade of 15 μm to 40 μm.

  (2) Upper cut is performed with a cutting blade having a large abrasive particle size (abrasive particle size of about φ4 μm to 12 μm), and downcut is performed with a finer abrasive particle size (abrasive particle size of about φ1 μm to 6 μm). Implement with a blade.

  (3) The upper cut is performed with a soft cutting blade with a fast-wearing bond material fixing the abrasive grains of the cutting blade, and the down-cut is performed with a hard bonding material cutting blade with less wear.

  Thus, the semiconductor wafer can be accurately divided by appropriately setting the cutting blade in the cutting process in relation to the cutting object.

  In addition, this invention is not limited to the said Example, Based on the meaning of this invention, a various deformation | transformation is possible and these are not excluded from the scope of the present invention.

  The method for dividing a semiconductor wafer according to the present invention is suitable for accurately dividing a semiconductor wafer individually.

It is sectional drawing of the division | segmentation process of the semiconductor wafer which shows 1st Example of this invention. It is a top view which shows the initial position of the cutting blade in the division | segmentation process of the semiconductor wafer which shows 1st Example of this invention. It is a figure which shows the upper cut process in the division | segmentation process of the semiconductor wafer which shows 1st Example of this invention. It is an expanded sectional view which shows the state before the down cut process in the division | segmentation process of the semiconductor wafer which shows 1st Example of this invention. It is a figure which shows the down cut process in the division | segmentation process of the semiconductor wafer which shows 1st Example of this invention. It is sectional drawing of the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a side surface enlarged view before the 1st upper cut process in the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a figure which shows the cutting groove by the 1st upper cut in the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a side surface enlarged view before the 1st upper cut process in the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a figure which shows the cutting groove by the 2nd upper cut in the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a figure which shows the cutting groove by the down cut in the division | segmentation process of the semiconductor wafer which shows 2nd Example of this invention. It is a division | segmentation process figure of the conventional semiconductor wafer. It is a figure which shows the division | segmentation state of the conventional semiconductor wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Semiconductor wafer 12 Adhesive tape 13 Adhesive 14 Wafer chuck stage 14A Air intake hole 15 Cutting blade 16 Cutting blade rotation direction 17 Depth direction 18 Wafer chuck stage movement direction (right direction)
19 Movement direction of wafer chuck stage (left direction)
21 Cutting groove (formed by first upper cut)
22 Cutting groove (formed by second upper cut)
23 Cutting groove (formed by down cut)

Claims (24)

The semiconductor wafer on which a wiring material formed on the surface, in the dividing method of a semiconductor wafer to be divided by the cutting blade rotates,
A first cutting step of upper-cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material using a first cutting blade having a first blade thickness;
After the first cutting step, by using a second cutting blade having a second blade thickness thinner than the first blade thickness, further cutting the cut portion in the first cutting step, A division process for down-cutting a semiconductor wafer;
A method for dividing a semiconductor wafer, comprising: The method for dividing a semiconductor wafer according to claim 1, wherein after the first cutting step, a portion adjacent to the portion of the semiconductor wafer cut in the first cutting step is divided into the semiconductor wafer and the cutting blade. A method for dividing a semiconductor wafer, comprising: a second cutting step in which an upper cut is performed by contacting the substrate with a predetermined depth. 3. The semiconductor wafer dividing method according to claim 1, wherein in the first cutting step, the semiconductor wafer is cut leaving a thickness of 50 μm to 350 μm. Wafer dividing method.   4. The method for dividing a semiconductor wafer according to claim 1, wherein the first cutting blade has a first blade thickness of 40 [mu] m to 150 [mu] m and is used in the second cutting step. The method for dividing a semiconductor wafer, wherein the cutting blade has a second blade thickness of 15 μm to 40 μm. In the dividing method of a semiconductor wafer according to any one of claims 1-4, wherein the semiconductor wafer by the first cutting edge and second cutting edge rotates at 10,000 rpm~6 ten thousand rpm A method for dividing a semiconductor wafer, comprising cutting or dividing. The semiconductor wafer on which a wiring material formed on the surface, in the dividing method of a semiconductor wafer to be divided by the cutting blade rotates,
The semiconductor wafer by moving the stage of fixing the said semiconductor wafer and the step of fixing on the stage, the a rotation in the opposite direction to the moving direction of the stage at a contact portion between the semiconductor wafer and the cutting blade cutting A first cutting step of cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material by an upper cut using a blade;
After the first cutting step, wherein moving the stage where the semiconductor wafer is fixed, the cutting blade to be rotated in the direction corresponding to the moving direction of the stage at a contact portion between the semiconductor wafer and the cutting edge a dividing step by a down-cut, further cutting the portion cut in the first cutting step, dividing the semiconductor wafer using,
A method for dividing a semiconductor wafer, comprising: 7. The method for dividing a semiconductor wafer according to claim 6 , wherein the first cutting step and the dividing step are performed alternately. In the dividing method of a semiconductor wafer according to claim 6 or 7, after the first cutting step, a portion adjacent to the portion of the semiconductor wafer which has been cut in said first cutting step, wherein A method for dividing a semiconductor wafer, comprising: a second cutting step of performing an upper cut by a predetermined depth by moving the stage to which the semiconductor wafer is fixed. In the dividing method of a semiconductor wafer according to any one of claims 6-8, wherein in the first cutting step, the semiconductor wafer is characterized in that it is cut to leave a thickness of 50μm~350μm semiconductor Wafer dividing method. 10. The semiconductor wafer dividing method according to claim 6 , wherein the semiconductor wafer is cut or divided by the cutting blade having a blade thickness of 25 μm to 150 μm. 10. Method. In the dividing method of a semiconductor wafer according to any one of claims 6-9, wherein the semiconductor wafer, the blade thickness at the first cutting step is cut by the cutting blade 40Myuemu～150myuemu, in the dividing step A method for dividing a semiconductor wafer, wherein the dividing is performed by the cutting blade having a blade thickness of 15 μm to 40 μm. The semiconductor wafer dividing method according to claim 6 , wherein the semiconductor wafer is cut or divided by rotating the cutting blade at 10,000 rpm to 60,000 rpm. A method for dividing a semiconductor wafer. 13. The semiconductor wafer dividing method according to claim 6 , wherein the semiconductor wafer is cut or divided in a state of being fixed on the stage via an adhesive tape. Wafer dividing method. 14. The semiconductor wafer dividing method according to claim 6, wherein in the first cutting step, the semiconductor wafer is cut by a cutting blade having an abrasive grain size of 4 μm to 12 μm, and in the dividing step, The method for dividing a semiconductor wafer, wherein the semiconductor wafer is divided by a cutting blade having an abrasive grain size of 1 μm to 6 μm. The semiconductor wafer on which a wiring material formed on the surface, in the dividing method of a semiconductor wafer to be divided by the cutting blade rotates,
Fixing the semiconductor wafer on a stage;
A first cutting step of cutting the semiconductor wafer by a predetermined depth so as to remove the wiring material by rotating the cutting blade and moving the stage to which the semiconductor wafer is fixed;
After the first cutting step, rotating the cutting blade, said by moving the stage where the semiconductor wafer is fixed, further cutting the portion cut in the first cutting step, the semiconductor wafer A method of dividing a semiconductor wafer, comprising a dividing step of down-cutting. 16. The method for dividing a semiconductor wafer according to claim 15 , wherein the first cutting step and the dividing step are alternately performed. In the dividing method of a semiconductor wafer according to any one of claims 15 or 16, after the first cutting step, a portion adjacent to the portion of the semiconductor wafer which has been cut in said first cutting step, wherein A method for dividing a semiconductor wafer, comprising: a second cutting step of performing an upper cut by a predetermined depth by moving the stage to which the semiconductor wafer is fixed. 18. The method for dividing a semiconductor wafer according to claim 17 , wherein in the second cutting step, the semiconductor wafer is cut leaving a thickness of 50 [mu] m to 350 [mu] m. 19. The method for dividing a semiconductor wafer according to claim 15 , wherein in the first cutting step, the semiconductor wafer is cut leaving a thickness of 50 [mu] m to 350 [mu] m. Wafer dividing method. 20. The method for dividing a semiconductor wafer according to claim 15 , wherein the semiconductor wafer is cut or divided by the cutting blade having a blade thickness of 25 [mu] m to 150 [mu] m. Method. In the dividing method of a semiconductor wafer according to any one of claims 15 to 19, wherein the semiconductor wafer, the blade thickness at the first cutting step is cut by the cutting blade 40Myuemu～150myuemu, in the dividing step A method for dividing a semiconductor wafer, wherein the dividing is performed by the cutting blade having a blade thickness of 15 μm to 40 μm. The semiconductor wafer dividing method according to any one of claims 15 to 21 , wherein the semiconductor wafer is cut or divided by rotating the cutting blade at 10,000 rpm to 60,000 rpm. A method for dividing a semiconductor wafer. 23. The method for dividing a semiconductor wafer according to claim 15 , wherein the semiconductor wafer is cut or divided while being fixed on the stage via an adhesive tape. How to split. The semiconductor wafer dividing method according to any one of claims 15 to 23 , wherein in the first cutting step, the semiconductor wafer is cut by a cutting blade having an abrasive grain diameter of 4 to 12 µm, and in the dividing step, The method for dividing a semiconductor wafer, wherein the semiconductor wafer is divided by a cutting blade having an abrasive grain size of 1 μm to 6 μm.

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