JP4023141B2 - 位相シフトマスクの検査方法 - Google Patents
位相シフトマスクの検査方法 Download PDFInfo
- Publication number
- JP4023141B2 JP4023141B2 JP2001360316A JP2001360316A JP4023141B2 JP 4023141 B2 JP4023141 B2 JP 4023141B2 JP 2001360316 A JP2001360316 A JP 2001360316A JP 2001360316 A JP2001360316 A JP 2001360316A JP 4023141 B2 JP4023141 B2 JP 4023141B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- phase shift
- shift mask
- inspection
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001360316A JP4023141B2 (ja) | 2001-11-27 | 2001-11-27 | 位相シフトマスクの検査方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001360316A JP4023141B2 (ja) | 2001-11-27 | 2001-11-27 | 位相シフトマスクの検査方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003162043A JP2003162043A (ja) | 2003-06-06 |
JP2003162043A5 JP2003162043A5 (zh) | 2005-06-30 |
JP4023141B2 true JP4023141B2 (ja) | 2007-12-19 |
Family
ID=19171158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001360316A Expired - Fee Related JP4023141B2 (ja) | 2001-11-27 | 2001-11-27 | 位相シフトマスクの検査方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4023141B2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9673420B2 (en) | 2013-02-08 | 2017-06-06 | Kabushiki Kaisha Toshiba | Organic electroluminescent device, illumination apparatus, and illumination system |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005026360A (ja) | 2003-06-30 | 2005-01-27 | Toshiba Corp | フォトマスクの欠陥検査方法、半導体装置の製造方法、およびフォトマスクの製造方法 |
JP5330019B2 (ja) * | 2009-02-18 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | マスクパターンの検査方法およびマスクパターン検査装置 |
CN116203802B (zh) * | 2022-10-12 | 2024-03-29 | 北京超弦存储器研究院 | 晶圆光刻参数获取方法和装置及晶圆光刻实现方法和装置 |
-
2001
- 2001-11-27 JP JP2001360316A patent/JP4023141B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9673420B2 (en) | 2013-02-08 | 2017-06-06 | Kabushiki Kaisha Toshiba | Organic electroluminescent device, illumination apparatus, and illumination system |
Also Published As
Publication number | Publication date |
---|---|
JP2003162043A (ja) | 2003-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI345132B (en) | Pattern forming method and phase shift mask manufacturing method | |
TWI388922B (zh) | 圖案形成方法及相位移遮罩的製造方法 | |
JP2007535694A (ja) | 透過率を調整することができる埋込減衰型位相シフトマスク | |
JPH06236021A (ja) | 露光方法、それに用いる位相シフトマスクおよびそれを用いた半導体集積回路装置の製造方法 | |
TWI436160B (zh) | 雷文生型相位移光罩及其製造方法 | |
US7761837B2 (en) | Method of making alternating phase shift masks | |
JP4023141B2 (ja) | 位相シフトマスクの検査方法 | |
KR20090084736A (ko) | 포토마스크의 결함 수정 방법, 포토마스크의 제조 방법, 위상 시프트 마스크의 제조 방법, 포토마스크, 위상 시프트마스크, 포토마스크 세트 및 패턴 전사 방법 | |
JP2003322949A (ja) | フォトマスク及びそれを用いたパターン形成方法 | |
JP5168190B2 (ja) | 両面にパターンを有するフォトマスクの作製方法およびフォトマスク | |
JP2003173014A (ja) | 位相シフトマスクの製造方法、位相シフトマスク、および、装置 | |
US6830702B2 (en) | Single trench alternating phase shift mask fabrication | |
JP2011059285A (ja) | フォトマスクの修正方法および修正されたフォトマスク | |
JP2005043646A (ja) | ハーフトーン型位相シフトマスクの製造方法 | |
JPH08194303A (ja) | 位相シフトマスクおよびその製造方法 | |
KR100382609B1 (ko) | 위상 반전 마스크의 제조 방법 | |
JP2007011169A (ja) | 位相シフトマスクの検査方法 | |
JP2008116750A (ja) | フォーカステスト方法、フォーカステストマスク、及び半導体装置の製造方法 | |
US20050009355A1 (en) | Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same | |
TW552470B (en) | Method for repairing mask by using multiple phase steps | |
Tan et al. | The study of chromeless phase lithography (CPL) for 45nm lithography | |
JP2004077800A (ja) | 位相シフトレチクルの製造方法 | |
JP2004191452A (ja) | 位相シフトマスクの欠陥修正方法 | |
Park et al. | Development of mask-making process for CLM manufacturing technology | |
JP2005202012A (ja) | 透過型位相シフトフォトマスクの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20040319 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20040604 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041012 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041012 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070521 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070529 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070730 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070911 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070924 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101012 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |