JP4017274B2 - プラズマ処理方法及び装置 - Google Patents

プラズマ処理方法及び装置 Download PDF

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Publication number
JP4017274B2
JP4017274B2 JP00193299A JP193299A JP4017274B2 JP 4017274 B2 JP4017274 B2 JP 4017274B2 JP 00193299 A JP00193299 A JP 00193299A JP 193299 A JP193299 A JP 193299A JP 4017274 B2 JP4017274 B2 JP 4017274B2
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Japan
Prior art keywords
vacuum chamber
plate
dielectric
plasma processing
frequency power
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Expired - Fee Related
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JP00193299A
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English (en)
Japanese (ja)
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JP2000200698A (ja
JP2000200698A5 (cg-RX-API-DMAC7.html
Inventor
利幸 渡辺
隆三 宝珍
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Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP00193299A priority Critical patent/JP4017274B2/ja
Publication of JP2000200698A publication Critical patent/JP2000200698A/ja
Publication of JP2000200698A5 publication Critical patent/JP2000200698A5/ja
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Publication of JP4017274B2 publication Critical patent/JP4017274B2/ja
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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP00193299A 1999-01-07 1999-01-07 プラズマ処理方法及び装置 Expired - Fee Related JP4017274B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP00193299A JP4017274B2 (ja) 1999-01-07 1999-01-07 プラズマ処理方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00193299A JP4017274B2 (ja) 1999-01-07 1999-01-07 プラズマ処理方法及び装置

Publications (3)

Publication Number Publication Date
JP2000200698A JP2000200698A (ja) 2000-07-18
JP2000200698A5 JP2000200698A5 (cg-RX-API-DMAC7.html) 2005-10-06
JP4017274B2 true JP4017274B2 (ja) 2007-12-05

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JP00193299A Expired - Fee Related JP4017274B2 (ja) 1999-01-07 1999-01-07 プラズマ処理方法及び装置

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JP (1) JP4017274B2 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373491B1 (ko) * 2000-06-27 2003-02-25 최대규 플라즈마 건식 가스 세정기
KR100479718B1 (ko) * 2002-05-02 2005-03-30 (주)아이씨디 유도안테나를 구비한 플라즈마 발생용 안테나 구조 및유도안테나를 이용한 플라즈마발생장치
JP3935401B2 (ja) * 2002-07-22 2007-06-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
KR100581858B1 (ko) 2002-12-17 2006-05-22 삼성에스디아이 주식회사 유도결합형 플라즈마 처리장치
JP4503574B2 (ja) * 2006-10-24 2010-07-14 東京エレクトロン株式会社 誘導結合プラズマ処理装置
TW200845197A (en) 2007-03-28 2008-11-16 Matsushita Electric Industrial Co Ltd Plasma etching apparatus
JP5285403B2 (ja) 2008-04-15 2013-09-11 東京エレクトロン株式会社 真空容器およびプラズマ処理装置
JP2012089334A (ja) * 2010-10-19 2012-05-10 Tokyo Electron Ltd マイクロ波プラズマ源およびプラズマ処理装置
JP6317138B2 (ja) * 2014-02-27 2018-04-25 東京エレクトロン株式会社 高周波プラズマ処理装置および高周波プラズマ処理方法
JP6607649B2 (ja) 2017-09-01 2019-11-20 株式会社ワイヤード レーザ加工装置、レーザ加工方法およびこれを用いて加工された薄板
US11338394B2 (en) 2017-09-01 2022-05-24 Wired Co., Ltd. Laser processing apparatus, laser processing method and thin plate processed using the same

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JP2000200698A (ja) 2000-07-18

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