JP4011781B2 - Resin coating method for semiconductor wafer - Google Patents

Resin coating method for semiconductor wafer Download PDF

Info

Publication number
JP4011781B2
JP4011781B2 JP06410299A JP6410299A JP4011781B2 JP 4011781 B2 JP4011781 B2 JP 4011781B2 JP 06410299 A JP06410299 A JP 06410299A JP 6410299 A JP6410299 A JP 6410299A JP 4011781 B2 JP4011781 B2 JP 4011781B2
Authority
JP
Japan
Prior art keywords
mold
resin
semiconductor wafer
film
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06410299A
Other languages
Japanese (ja)
Other versions
JP2000260796A (en
Inventor
啓司 前田
茂 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Towa Corp
Original Assignee
Towa Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Towa Corp filed Critical Towa Corp
Priority to JP06410299A priority Critical patent/JP4011781B2/en
Priority to SG200001259A priority patent/SG92685A1/en
Priority to EP00301890A priority patent/EP1035572A3/en
Priority to KR1020000011433A priority patent/KR100357362B1/en
Priority to MYPI20000901A priority patent/MY120473A/en
Priority to TW089104272A priority patent/TW460989B/en
Priority to US09/523,420 priority patent/US6346433B1/en
Publication of JP2000260796A publication Critical patent/JP2000260796A/en
Application granted granted Critical
Publication of JP4011781B2 publication Critical patent/JP4011781B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Description

【0001】
【発明の属する技術分野】
この発明は、例えば、半田バンプ(突起電極)等が装着された半導体ウェーハのバンプ装着面を樹脂で被覆する半導体ウェーハの樹脂被覆方法の改良に関するものである。
【0002】
【従来の技術】
従来より、例えば、チップサイズパッケージ(CSP)等における半導体チップのバンプ装着面を樹脂で被覆することによって柔らかくて損傷し易いバンプを保護・補強することが行われているが、このチップに対する樹脂被覆は半導体ウェーハの段階(ウェーハレベル)で行われている。
例えば、図5(1)・図5(2)に示す樹脂被覆用金型を用いて、まず、前記した半導体ウェーハのバンプ装着面を樹脂被覆して樹脂被覆ウェーハを形成し、次に、前記樹脂被覆ウェーハを切断分離して多数の樹脂被覆チップを形成することが行われている。
【0003】
即ち、図5(1)・図5(2)に示す金型には、上型81と、下型82とが対向配置して設けられると共に、前記上型81の型面にはバンプ露出用のフィルム83が張設されるように構成され、前記下型82には、前記バンプ88が装着された半導体ウェーハ84を供給セットする樹脂被覆用のキャビティ85と、前記キャビティ85を含む嵌合孔86と、前記嵌合孔86内を上下摺動する前記キャビティ85の底面を含む底面部材87とが設けられて構成されている。
従って、図5(1)に示すように、まず、前記上型81の型面に前記フィルム83を張設すると共に、前記キャビティ85内に前記半導体ウェーハ84をそのバンプ装着面を上面側にした状態で供給セットし且つ前記バンプ装着面上に所要量の樹脂材料89を供給し、前記上下両型81・82を型締めすると共に、前記キャビティ85内の樹脂材料89を加熱溶融化する。
次に、図5(2)に示すように、前記キャビティにおいて、前記底面部材87に前記半導体ウェーハ84を載置した状態で前記底面部材87を上動することにより、前記フィルム83に前記バンプ88の先端部を当接させる。
このとき、少なくとも前記ウェーハ84のバンプ装着面が樹脂で被覆されることになるので、前記キャビティ85内で形成される樹脂被覆ウェーハ90の樹脂被覆面(バンプ装着面)において、前記バンプ88におけるフィルム83と当接した部分(バンプ先端部)が樹脂表面に露出することになる。
【0004】
【発明が解決しようとする課題】
しかしながら、前記した嵌合孔と底面部材との隙間(摺動部)に溶融樹脂材料が浸入して硬化することにより、前記隙間に樹脂ばり(硬化物)が発生して前記底面部材に摺動不良が発生し易い。
従って、前記隙間に発生する樹脂ばりを頻繁に除去しなければならず、前記樹脂被覆ウェーハの生産性が低下すると云う弊害がある。
また、前記摺動不良の発生によって、前記底面部材で前記キャビティ内の樹脂に充分な樹脂圧を加えることができなくなるので、前記フィルムに前記バンプを当接することができず、前記バンプが樹脂内に完全に埋没して前記バンプが外部接続用としての機能を果たさなくなる等、高品質性・高信頼性の樹脂被覆ウェーハ(樹脂被覆チップ)を得ることができないと云う弊害がある。
【0005】
そこで、本発明は、樹脂被覆ウェーハの生産性を向上させることができる半導体ウェーハの樹脂被覆方法を提供することを目的とするものである。
また、本発明は、高品質性・高信頼性の樹脂被覆ウェーハを得ることができる半導体ウェーハの樹脂被覆方法を提供することを目的とするものである。
【0006】
【課題を解決するための手段】
前記技術的課題を解決するための本発明に係る半導体ウェーハの樹脂被覆方法は、バンプを装着した半導体ウェーハのバンプ装着面を樹脂で被覆する樹脂被覆用金型の一方の型面に設けた樹脂被覆用金型キャビティの底面の所定位置に前記半導体ウェーハを、前記バンプ装着面を前記金型キャビティ底面とは反対側にした状態で、載置供給する半導体ウェーハの供給工程と、前記金型の他方の型面にバンプ露出用フィルムを張設するフィルムの張設工程と、前記半導体ウェーハの供給工程時に、前記金型キャビティ底面に前記ウェーハを吸着・固定する半導体ウェーハの吸着・固定工程と、前記フィルムの張設工程時に、前記金型の他方の型面に前記フィルムを吸着・固定するフィルムの吸着・固定工程と、前記金型キャビティ内に樹脂材料を所要量供給する樹脂材料の供給工程と、前記金型を型締めする金型の型締工程と、前記金型の型締工程時に、少なくとも前記金型キャビティ内を 真空引きして所定の真空状態にする工程と、前記金型の型締工程時に、前記金型の一方の型に設けた環状凸部と前記金型の他方の型に設けた環状凹部と前記環状凹部に設けた吸引排出機構とからなる固定部材において、前記環状凸部と前記環状凹部とを嵌合し且つ前記環状凹部内から前記吸引排出機構で強制的に空気等を吸引排出して前記フィルムを前記凹部内に引き込み伸張する工程と、前記金型キャビティ内で前記樹脂材料を加熱溶融化する樹脂材料の加熱溶融化工程と、前記金型の他方の型面に設けた押圧部材で前記フィルムを前記金型キャビティ方向に押圧する押圧部材による押圧工程と、前記押圧部材による押圧工程時に、前記金型キャビティ内で前記バンプ先端部に前記フィルムを当接するフィルムの当接工程と、前記押圧部材による押圧工程時に、前記フィルムを介して前記金型キャビティ内の樹脂を加圧することによって前記した半導体ウェーハのバンプ装着面を樹脂で被覆する半導体ウェーハの樹脂被覆成形工程と、前記金型を型開きして前記金型キャビティ内から前記バンプ装着面を樹脂で被覆した樹脂被覆半導体ウェーハを離型する樹脂被覆ウェーハの離型工程とを備えたことを特徴とする。
【0007】
また、前記した技術的課題を解決するための本発明に係る半導体ウェーハの樹脂被覆方法は、前記した樹脂被覆用金型に複数個の固定部材を設けると共に、前記金型の型締工程時に、前記した複数個の固定部材における環状凹部内から任意且つ適宜に前記吸引排出機構で強制的に空気等を吸引排出する工程を行うことを特徴とする。
【0008】
また、前記した技術的課題を解決するための本発明に係る半導体ウェーハの樹脂被覆方法は、前記した金型の型締工程時に、金型キャビティの外周囲における型面に設けた係止部材にてフィルムを係止する工程を行うことを特徴とする。
【0009】
【発明の実施の形態】
即ち、半導体ウェーハの樹脂被覆用金型(上下両型)を用いて、まず、前記した下型キャビティ内の所定位置に前記半導体ウェーハをそのバンプ装着面を上面にして供給し、且つ、前記バンプ装着面上に樹脂材料を所要量供給すると共に、前記両型を型締めすることにより、少なくとも前記キャビティを含む外気遮断範囲から真空引きして少なくとも前記したキャビティ内を所定の真空状態にすると共に、前記樹脂材料を加熱溶融化し、次に、前記上型面張設フィルム7を前記バンプ先端部に当接すると共に、前記キャビティ内で前記半導体ウェーハのバンプ装着面を樹脂で被覆して樹脂被覆ウェーハを形成する。
【0010】
【実施例】
以下、本発明を実施例図に基づいて詳細に説明する。
【0011】
即ち、図例に示す金型は、固定上型1と、該固定上型1に対向配置した可動下型2とから構成されている。
また、前記下型2の型面にはバンプ突起電極3が装着された半導体ウェーハ4を前記バンプ装着面を上面(型面側)にした状態で供給セットする樹脂被覆用キャビティ5が設けられて構成されると共に、前記キャビティ5の底面の所定位置に載置供給されたウェーハ4のバンプ装着面上に、例えば、粉末状或いは顆粒状の樹脂材料6を所要量供給することができるように構成されている。
また、前記上型1の型面にはバンプ露出用のフィルム7(離型フィルム)が張設されると共に、該上型1には、前記下型キャビティ5の下型面形状に対応した押圧面(上型面)を備えた押圧部材8と、前記押圧部材8を上下動する上下動機構9とが設けられている。
従って、前記上下動機構9で前記押圧部材8を下動させることによって、前記バンプ3の先端部に前記フィルム7に当接させることができるように構成されると共に、前記キャビティ5内の樹脂を前記フィルム7を介して所定の樹脂圧で加圧することができるように構成されている。
また、前記キャビティ5の外周囲(下型面)には、前記フィルム7を型面に係止して固定する係止部材10(環状突起)が設けられると共に、前記両型の型締時1・2に、前記フィルム7を前記両型面間に挟持固定して下型キャビティ面に張設することができるように構成されている。
また、図示はしていないが、前記金型には樹脂成形温度にまで加熱する加熱手段が設けられて構成されると共に、前記キャビティ5内に供給された樹脂材料6を加熱溶融化することができるように構成されている。
【0012】
また、図例に示すように、前記金型キャビティ5の底面には前記金型キャビティ5底面に前記半導体ウェーハ4を吸着固定する半導体ウェーハの吸着固定手段(例えば、所要数の吸着孔)31が設けられて構成されている。
従って、前記した半導体ウェーハ4を前記金型キャビティ5内に載置供給するとき、前記金型キャビティ5底面の吸引孔31から真空引きすることにより、前記半導体ウェーハ4を前記金型キャビティ5底面の所定位置に吸着・固定することができる。
【0013】
また、図例に示すように、前記した下型面におけるキャビティ5の外周囲に設けられた係止部材10の外周囲に対応する上下両型面の所定位置には、前記両型1・2の型締時に、前記フィルム7を挟持して前記両型面間に固定する前記フィルムの固定部材が設けられると共に、前記した固定部材は、下型面に設けられた環状凸部32と、上型面に設けられた前記下型環状凸部32に対応する環状凹部33(周溝)と、前記凹部33に設けられた吸引排出機構35とから構成されている。
従って、前記上型環状凹部33内から前記吸引排出機構35で強制的に空気等を吸引排出することによって前記上型面に前記フィルム7を吸着固定することができるように構成されている。
また、前記両型1・2の型締時に、前記した固定部材の環状凸部32と環状凹部33を嵌合し且つ前記上型環状凹部33内から前記吸引排出機構35で強制的に空気等を吸引排出して前記フィルム7を前記凹部33内に引き込み伸張することにより、前記フィルム7のしわを伸ばして除去することができるように構成されている。
また、前記したフィルムの固定部材(前記した凹部33と凸部32との組み合わせ)を、単数個或いは複数個設ける構成を採用することができる。
【0014】
また、前記した金型には、少なくとも金型キャビティ5を含む成形部を外気遮断状態に設定して構成した少なくとも前記成形部を含む外気遮断範囲34から真空引きする真空引き機構(図示なし)が設けられると共に、前記外気遮断範囲35から前記真空引き機構で真空引きして少なくとも前記キャビティ5を含む成形部を所定の真空状態にすることができるように構成されている。
【0015】
即ち、まず、前記上型1の型面に前記フィルム7を張設すると共に、前記上型1の環状凹部33から前記吸引排出機構35で強制的に空気等を吸引排出することにより、前記フィルム7を前記上型面に効率良く吸着・固定することができる。
次に、前記下型キャビティ5内における底面の所定位置に前記半導体ウェーハ4を前記バンプ3の装着面を上面にした状態で供給セットし、且つ、前記バンプ装着面上に前記樹脂材料6を所要量供給する。
このとき、前記吸着固定手段31にて前記半導体ウェーハ4を前記キャビティ5底面に効率良く吸着・固定することができる。
次に、前記下型2を上動して前記両型面間を所要の間隔で保持する中間型締めを行うと共に、少なくとも前記キャビティ5を含む成形部を外気遮断状態にして外気遮断範囲34を形成し、前記外気遮断範囲34から前記真空引き機構で真空引きすることにより、少なくともキャビティ5内(前記外気遮断範囲34)を所定の真空状態にする。
次に、前記下型2を上動して前記両型面を接合する前記金型の完全型締めを行うと共に、前記固定部材の凸部と凹部とを嵌合する。
このとき、前記係止部材10で前記フィルム7は前記両型面間に係止され、且つ、前記フィルム7は前記凹部33内に引き込まれて前記フィルム7は伸張することになるので、前記フィルム7のしわを伸ばして効率良く除去することができる。
次に、前記キャビティ5内に供給された樹脂材料6を加熱溶融化する。
また、次に、前記上下動機構9で前記した押圧部材8(の押圧面)を(前記キャビティ5内における下型面の下方位置方向に)下動して前記フィルム7を前記キャビティ5内に押圧伸張させることによって、前記フィルム7を前記バンプ3の先端部に当接すると共に、前記押圧部材8で前記キャビティ5内の樹脂を前記フィルム7を介して所定の樹脂圧で加圧する。
このとき、前記フィルム7で少なくとも前記バンプ3の先端部を樹脂と接触しない状態に構成することができる。
また、このとき、前記フィルム7に発生するフィルムのしわを伸張して除去することができると共に、前記キャビティ5内を前記フィルム7でシールすることによって前記キャビティ5内に樹脂を密封することができる。
硬化に必要な所要時間の経過後、前記両型1・2を型開きすると共に、前記両型間に樹脂被覆ウェーハ12を前記フィルム7に付着した状態で離型することができる。
即ち、前記ウェーハ4に装着されたバンプ3の先端部を樹脂11の表面に露出した状態で前記樹脂被覆ウェーハ12を形成することができるので、従来例に示すような弊害をなくして、樹脂被覆ウェーハの生産性を向上させることができると共に、高品質性・高信頼性の樹脂被覆ウェーハを得ることができる。
また、少なくとも前記したキャビティ5を含む成形部を所定の真空状態にして樹脂被覆することができるので、前記半導体ウェーハ4のバンプ3装着面を被覆する樹脂11に発生する気泡(ボイド)及び欠損部を効率良く防止することができる。
【0016】
また、前記した実施例において、前記固定部材(前記した凹部33と凸部32と吸引排出機構35)を複数個設けた構成の場合、前記した両型の型締時に、前記凹部32内から、略同時的に、或いは、各別に、或いは、外側の凹部32から順次に、或いは、任意に且つ適宜に、強制的に吸引排出して前記凹部32内に前記フィルム7を引き込み伸張して前記フィルム7のしわを伸ばす構成を採用することができる。
【0017】
また、前記した実施例の中間型締時において、前記下型2を継続して上動させる構成を採用することができる。
【0018】
なお、図4(1)・図4(2)に示す樹脂被覆ウェーハ12は、図4(2)に示すチップ13毎に切断分離され、図4(3)に示す樹脂被覆チップ14が形成されると共に、前記した樹脂被覆チップ14の樹脂11の表面に露出したバンプ3の先端部を、例えば、基板等と電気的に接続することができるように構成されている。
【0019】
また、前記した実施例においては、金型に単数個のキャビティを設ける構成を例示したが、金型に複数個のキャビティを設ける構成を採用してもよい。
【0020】
また、前記した実施例では、粉末状或いは顆粒状樹脂材料を用いる構成を例示したが、例えば、樹脂タブレット等の種々の形状の樹脂材料を用いることができる。
また、前記した実施例では、熱硬化性樹脂材料を用いる構成を例示したが、例えば、熱可塑性樹脂材料等を採用することができる。
【0021】
本発明は、上述した各実施例に限定されるものではなく、本発明の趣旨を逸脱しない範囲内で、必要に応じて、任意に且つ適宜に変更・選択して採用できるものである。
【0022】
【発明の効果】
本発明によれば、樹脂被覆ウェーハの生産性を向上させることができる半導体ウェーハの樹脂被覆方法を提供することができると云った優れた効果を奏するものである。
【0023】
また、本発明によれば、高品質性・高信頼性の樹脂被覆ウェーハを得ることができる半導体ウェーハの樹脂被覆方法を提供することができると云う優れた効果を奏するものである。
【図面の簡単な説明】
【図1】 図1(1)・図1(2)は本発明に係る半導体ウェーハの樹脂被覆金型を概略的に示す概略縦断面図であって、図1(1)は半導体ウェーハとフィルムとの供給状態を示し、図1(2)は前記した半導体ウェーハの吸着・固定状態を示している。
【図2】 図2(1)・図2(2)は本発明に係る半導体ウェーハの樹脂被覆金型を概略的に示す概略縦断面図であって、図2(1)は、樹脂材料の供給状態を示し、図2(2)は前記して金型に形成した外気遮断範囲から真空引きした状態を示している。
【図3】 図3(1)・図3(2)は本発明に係る半導体ウェーハの樹脂被覆金型を概略的に示す概略縦断面図であって、図3(1)は半導体ウェーハのバンプ先端部にフィルムを当接した状態を示し、図3(2)は金型を型開きして樹脂被覆ウェーハを離型した状態を示している。
【図4】 図4(1)は樹脂被覆ウェーハを概略的に示す一部切欠概略側面図であり、図4(2)は図4(1)に示す樹脂被覆ウェーハの概略底面図であり、図4(3)は前記樹脂被覆ウェーハを切断分離して形成した樹脂被覆チップを概略的に示す概略縦断面図である。
【図5】 図5(1)・図5(2)は従来の樹脂被覆金型を概略的に示す概略縦断面図である。
【符号の説明】
1 固定上型
2 可動下型
3 バンプ
4 半導体ウェーハ
5 キャビティ
6 樹脂材料
7 フィルム
8 押圧部材
9 上下動機構
10 係止部材
11 樹脂
12 樹脂被覆ウェーハ
13 チップ
14 樹脂被覆チップ
31 半導体ウェーハの吸着固定手段
32 環状凸部
33 環状凹部
34 外気遮断範囲
35 吸引排出機構
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an improvement in a resin coating method for a semiconductor wafer in which, for example, a bump mounting surface of a semiconductor wafer on which solder bumps (projection electrodes) are mounted is coated with a resin.
[0002]
[Prior art]
Conventionally, for example, a bump mounting surface of a semiconductor chip in a chip size package ( CSP ) or the like is covered with a resin to protect and reinforce a soft and easily damaged bump. Is performed at the semiconductor wafer stage (wafer level).
For example, by using the resin coating mold shown in FIGS. 5 (1) and 5 (2), first, the bump mounting surface of the semiconductor wafer is resin-coated to form a resin-coated wafer, A number of resin-coated chips are formed by cutting and separating a resin-coated wafer.
[0003]
That is, the mold shown in FIGS. 5 (1) and 5 (2) is provided with an upper mold 81 and a lower mold 82 arranged opposite to each other, and the mold surface of the upper mold 81 is used for bump exposure. A resin-coated cavity 85 for supplying and setting the semiconductor wafer 84 on which the bumps 88 are mounted and a fitting hole including the cavity 85 are formed. 86 and a bottom surface member 87 including the bottom surface of the cavity 85 that slides up and down in the fitting hole 86 are provided.
Therefore, as shown in FIG. 5A, first, the film 83 is stretched on the mold surface of the upper mold 81, and the bump mounting surface of the semiconductor wafer 84 is placed on the upper surface side in the cavity 85. The resin material 89 is supplied and set in a state and a required amount of resin material 89 is supplied onto the bump mounting surface, the upper and lower molds 81 and 82 are clamped, and the resin material 89 in the cavity 85 is heated and melted.
Next, as shown in FIG. 5 (2), in the cavity, the bottom member 87 is moved upward with the semiconductor wafer 84 placed on the bottom member 87, whereby the bumps 88 are formed on the film 83. The tip part of is brought into contact.
At this time, since the bump mounting surface of at least the wafer 84 is particularly made is coated with a resin, the resin-coated surface of the resin-coated wafer 90 which is formed within the cavity 85 in (bump mounting surface), the film in the bump 88 The portion in contact with 83 (bump tip) is exposed on the resin surface.
[0004]
[Problems to be solved by the invention]
However, when the molten resin material enters and cures in the gap (sliding portion) between the fitting hole and the bottom member, a resin flash (cured product) is generated in the gap and slides on the bottom member. Defects are likely to occur.
Therefore, the resin burrs generated in the gaps must be frequently removed, and there is an adverse effect that the productivity of the resin-coated wafer is lowered.
In addition, due to the occurrence of the sliding failure, the bottom member cannot apply sufficient resin pressure to the resin in the cavity, so that the bump cannot be brought into contact with the film, and the bump is in the resin. There is an adverse effect that a high-quality and high-reliability resin-coated wafer (resin-coated chip) cannot be obtained, for example, because the bumps are completely buried and the bumps do not function as external connections.
[0005]
Then, this invention aims at providing the resin coating method of the semiconductor wafer which can improve the productivity of a resin coated wafer.
Another object of the present invention is to provide a resin coating method for a semiconductor wafer that can provide a resin-coated wafer with high quality and high reliability.
[0006]
[Means for Solving the Problems]
The resin coating method for a semiconductor wafer according to the present invention for solving the technical problem is a resin provided on one mold surface of a resin coating mold for coating a bump mounting surface of a semiconductor wafer on which a bump is mounted with a resin. A step of supplying a semiconductor wafer in a predetermined position on the bottom surface of the mold cavity for coating, and placing and supplying the semiconductor wafer in a state where the bump mounting surface is opposite to the bottom surface of the mold cavity; A film stretching process for stretching a bump exposure film on the other mold surface, and a semiconductor wafer adsorption / fixing process for adsorbing / fixing the wafer to the mold cavity bottom surface during the semiconductor wafer supply process; A film adsorbing / fixing step for adsorbing / fixing the film to the other mold surface of the mold during the film stretching process, and a resin material in the mold cavity A step of supplying the required amount supplied resin material, and the mold clamping step of the mold for clamping the mold, when the mold clamping step of the mold, a predetermined vacuum state by evacuating at least the mold cavity And an annular protrusion provided in one mold of the mold, an annular recess provided in the other mold of the mold, and a suction / discharge mechanism provided in the annular recess during the mold clamping process of the mold In the fixing member, the annular convex portion and the annular concave portion are fitted, and air or the like is forcibly sucked and discharged from the annular concave portion by the suction / discharge mechanism, and the film is drawn into the concave portion and extended. A step of heating and melting the resin material in the mold cavity, and a pressing member provided on the other mold surface of the mold in the mold cavity direction. Pressing process by pressing member In the pressing step by the pressing member, in the mold cavity, the film abutting step in which the film abuts on the tip of the bump in the mold cavity, and in the mold cavity through the film in the pressing step by the pressing member. A resin-covering molding process of the semiconductor wafer for covering the bump mounting surface of the semiconductor wafer with the resin by pressurizing the resin, and opening the mold to open the bump mounting surface from the mold cavity with the resin. And a resin-coated wafer releasing step for releasing the coated resin-coated semiconductor wafer.
[0007]
Moreover, the resin coating method of the semiconductor wafer according to the present invention for solving the technical problem described above is provided with a plurality of fixing members in the resin coating mold, and at the time of the mold clamping process of the mold, A step of forcibly sucking and discharging air or the like from the annular recesses of the plurality of fixing members is arbitrarily and appropriately performed by the suction and discharge mechanism.
[0008]
In addition, the semiconductor wafer resin coating method according to the present invention for solving the technical problem described above is applied to the locking member provided on the mold surface in the outer periphery of the mold cavity during the mold clamping process. And a step of locking the film.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
That is, by using a resin coating mold (upper and lower molds) of a semiconductor wafer, first, the semiconductor wafer is supplied to a predetermined position in the lower mold cavity with the bump mounting surface as an upper surface, and the bump While supplying the required amount of resin material on the mounting surface, and clamping the two molds, evacuating from the outside air blocking range including at least the cavity to at least a predetermined vacuum state in the cavity, The resin material is melted by heating, and then the upper mold surface extending film 7 is brought into contact with the tip of the bump, and the bump mounting surface of the semiconductor wafer is coated with resin in the cavity to form a resin-coated wafer. Form.
[0010]
【Example】
Hereinafter, the present invention will be described in detail with reference to the drawings.
[0011]
In other words, the mold shown in the drawing is composed of a fixed upper mold 1 and a movable lower mold 2 disposed opposite to the fixed upper mold 1.
The mold surface of the lower mold 2 is provided with a resin coating cavity 5 for supplying and setting the semiconductor wafer 4 on which the bump protruding electrodes 3 are mounted with the bump mounting surface on the upper surface (the mold surface side). In addition, a required amount of, for example, a powder or granular resin material 6 can be supplied onto the bump mounting surface of the wafer 4 placed and supplied at a predetermined position on the bottom surface of the cavity 5. Has been.
A bump exposing film 7 (release film) is stretched on the mold surface of the upper mold 1, and the upper mold 1 is pressed against the lower mold surface shape of the lower mold cavity 5. A pressing member 8 having a surface (upper mold surface) and a vertical movement mechanism 9 for moving the pressing member 8 up and down are provided.
Therefore, the pressing member 8 is moved downward by the vertical movement mechanism 9 so that the film 7 can be brought into contact with the tip of the bump 3 and the resin in the cavity 5 It can be pressurized with a predetermined resin pressure through the film 7.
In addition, a locking member 10 (annular protrusion) for locking and fixing the film 7 to the mold surface is provided on the outer periphery (lower mold surface) of the cavity 5, and at the time of mold clamping of both the molds 1. 2 is configured such that the film 7 can be sandwiched and fixed between the two mold surfaces and stretched on the lower mold cavity surface.
Although not shown, the mold is provided with heating means for heating to the resin molding temperature, and the resin material 6 supplied into the cavity 5 can be heated and melted. It is configured to be able to.
[0012]
Also, as shown in the figure, a semiconductor wafer suction fixing means (for example, a required number of suction holes) 31 for sucking and fixing the semiconductor wafer 4 to the bottom surface of the mold cavity 5 is provided on the bottom surface of the mold cavity 5. It is provided and configured.
Accordingly, when the semiconductor wafer 4 is placed and fed into the mold cavity 5, the semiconductor wafer 4 is placed on the bottom surface of the mold cavity 5 by evacuating the suction hole 31 on the bottom surface of the mold cavity 5. It can be sucked and fixed at a predetermined position.
[0013]
Further, as shown in the figure, the two molds 1 and 2 are located at predetermined positions on the upper and lower mold surfaces corresponding to the outer periphery of the locking member 10 provided on the outer periphery of the cavity 5 on the lower mold surface. The film fixing member is provided to clamp the film 7 and fix between the two mold surfaces when the mold is clamped, and the fixing member includes an annular protrusion 32 provided on the lower mold surface, An annular recess 33 (circumferential groove) corresponding to the lower mold annular protrusion 32 provided on the mold surface and a suction / discharge mechanism 35 provided in the recess 33 are configured.
Therefore, the film 7 can be adsorbed and fixed to the upper mold surface by forcibly sucking and discharging air or the like from the upper mold annular recess 33 by the suction / discharge mechanism 35.
Further, when the both molds 1 and 2 are clamped, the annular convex portion 32 and the annular concave portion 33 of the fixing member described above are fitted, and the suction and discharge mechanism 35 forcibly removes air or the like from the upper mold annular concave portion 33. By sucking and discharging the film 7 and drawing the film 7 into the recess 33 and extending it, the wrinkles of the film 7 can be extended and removed.
Moreover, the structure which provides the fixing member (a combination of the above-mentioned recessed part 33 and the convex part 32) of an above described film can be employ | adopted.
[0014]
Further, the above-described mold has a vacuuming mechanism (not shown) for evacuating from the outside air blocking range 34 including at least the molding part, which is configured by setting the molding part including at least the mold cavity 5 to the outside air blocking state. In addition to being provided, it is configured such that the molded part including at least the cavity 5 can be brought into a predetermined vacuum state by evacuating from the outside air blocking range 35 by the evacuation mechanism.
[0015]
That is, first, while stretched the film 7 on the mold surface of the upper mold 1, forcibly by suction and discharge the air or the like in the suction and discharge mechanism 35 from the annular recess 33 of the upper mold 1, the The film 7 can be efficiently adsorbed and fixed to the upper mold surface.
Next, the semiconductor wafer 4 is supplied and set at a predetermined position on the bottom surface in the lower mold cavity 5 with the mounting surface of the bump 3 facing up, and the resin material 6 is required on the bump mounting surface. Supply quantity.
At this time, the semiconductor wafer 4 can be efficiently suctioned and fixed to the bottom surface of the cavity 5 by the suction fixing means 31.
Next, the lower mold 2 is moved upward to perform intermediate mold clamping to hold the two mold surfaces at a required interval, and at least the molded portion including the cavity 5 is shut off from the outside air to set the outside air blocking range 34. By forming and evacuating from the outside air blocking range 34 with the evacuation mechanism, at least the inside of the cavity 5 (the outside air blocking range 34) is brought into a predetermined vacuum state.
Next, the lower mold 2 is moved upward to perform complete clamping of the mold that joins both mold surfaces, and the convex part and concave part of the fixing member are fitted together.
At this time, the film 7 is locked between the two mold surfaces by the locking member 10, and the film 7 is drawn into the recess 33 and the film 7 expands. 7 wrinkles can be extended and removed efficiently.
Next, the resin material 6 supplied into the cavity 5 is heated and melted.
Next, the pressing member 8 (the pressing surface thereof) is moved down (in the direction of the lower position of the lower mold surface in the cavity 5) by the vertical movement mechanism 9 to move the film 7 into the cavity 5. By pressing and extending, the film 7 is brought into contact with the tip of the bump 3 and the resin in the cavity 5 is pressed by the pressing member 8 through the film 7 with a predetermined resin pressure.
At this time, the film 7 can be configured such that at least the tip of the bump 3 is not in contact with the resin.
At this time, wrinkles of the film generated in the film 7 can be stretched and removed, and the resin can be sealed in the cavity 5 by sealing the cavity 5 with the film 7. .
After the time required for curing has elapsed, the molds 1 and 2 can be opened, and the resin-coated wafer 12 can be released with the film 7 attached between the molds.
That is, since the resin-coated wafer 12 can be formed in a state where the front ends of the bumps 3 mounted on the wafer 4 are exposed on the surface of the resin 11, there is no adverse effect as shown in the conventional example, and the resin coating is eliminated. Wafer productivity can be improved, and a high-quality and highly reliable resin-coated wafer can be obtained.
In addition, since at least the molding portion including the cavity 5 can be coated with a resin in a predetermined vacuum state, bubbles and voids generated in the resin 11 covering the bump 3 mounting surface of the semiconductor wafer 4 can be obtained. Can be efficiently prevented.
[0016]
Further, in the above-described embodiment, in the case of a configuration in which a plurality of the fixing members (the concave portion 33, the convex portion 32, and the suction / discharge mechanism 35 described above) are provided, from the inside of the concave portion 32 at the time of clamping the above-described molds, At approximately the same time, separately or sequentially from the outer concave portion 32, or arbitrarily and appropriately, forcibly sucking and discharging, the film 7 is drawn into the concave portion 32, and then stretched. It is possible to employ a configuration in which the wrinkle of 7 is extended.
[0017]
In addition, it is possible to employ a configuration in which the lower mold 2 is continuously moved upward during the intermediate mold clamping in the above-described embodiment.
[0018]
The resin-coated wafer 12 shown in FIGS. 4 (1) and 4 (2) is cut and separated for each chip 13 shown in FIG. 4 (2) to form the resin-coated chip 14 shown in FIG. 4 (3). In addition, the tip of the bump 3 exposed on the surface of the resin 11 of the resin-coated chip 14 can be electrically connected to, for example, a substrate or the like.
[0019]
In the above-described embodiment, the configuration in which a single cavity is provided in the mold is illustrated, but a configuration in which a plurality of cavities are provided in the mold may be employed.
[0020]
Moreover, although the structure which uses a powdery or granular resin material was illustrated in the above-mentioned Example, resin materials of various shapes, such as a resin tablet, can be used, for example.
Further, in the above-described embodiment, the configuration using the thermosetting resin material is exemplified, but, for example, a thermoplastic resin material or the like can be adopted.
[0021]
The present invention is not limited to the above-described embodiments, and can be arbitrarily changed and selected as necessary within a range not departing from the gist of the present invention.
[0022]
【The invention's effect】
According to the present invention, it is possible to provide an excellent effect that a semiconductor wafer resin coating method capable of improving the productivity of a resin coated wafer can be provided.
[0023]
In addition, according to the present invention, there is an excellent effect that it is possible to provide a resin coating method for a semiconductor wafer that can provide a resin-coated wafer with high quality and high reliability.
[Brief description of the drawings]
FIG. 1 (1) and FIG. 1 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold for a semiconductor wafer according to the present invention. FIG. 1 (1) shows a semiconductor wafer and a film. FIG. 1 (2) shows the above-described suction / fixed state of the semiconductor wafer.
2 (1) and FIG. 2 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold of a semiconductor wafer according to the present invention. FIG. 2 (1) is a diagram of a resin material. The supply state is shown, and FIG. 2 (2) shows a state in which a vacuum is drawn from the outside air blocking range formed in the mold as described above .
FIGS. 3 (1) and 3 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold of a semiconductor wafer according to the present invention, and FIG. 3 (1) is a bump of the semiconductor wafer. FIG. 3B shows a state in which the film is in contact with the tip, and FIG. 3B shows a state in which the mold is opened and the resin-coated wafer is released.
4 (1) is a partially cutaway schematic side view schematically showing a resin-coated wafer, and FIG. 4 (2) is a schematic bottom view of the resin-coated wafer shown in FIG. 4 (1); FIG. 4 (3) is a schematic longitudinal sectional view schematically showing a resin-coated chip formed by cutting and separating the resin-coated wafer.
5 (1) and FIG. 5 (2) are schematic longitudinal sectional views schematically showing a conventional resin-coated mold.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Fixed upper type | mold 2 Movable lower type | mold 3 Bump 4 Semiconductor wafer 5 Cavity 6 Resin material 7 Film 8 Pressing member 9 Vertical movement mechanism 10 Locking member 11 Resin 12 Resin coated wafer 13 Chip 14 Resin coated chip 31 Adsorption fixing means of semiconductor wafer 32 Annular convex part 33 Annular concave part 34 Outside air blocking range 35 Suction / discharge mechanism

Claims (3)

バンプを装着した半導体ウェーハのバンプ装着面を樹脂で被覆する樹脂被覆用金型の一方の型面に設けた樹脂被覆用金型キャビティの底面の所定位置に前記半導体ウェーハを、前記バンプ装着面を前記金型キャビティ底面とは反対側にした状態で、載置供給する半導体ウェーハの供給工程と、
前記金型の他方の型面にバンプ露出用フィルムを張設するフィルムの張設工程と、
前記半導体ウェーハの供給工程時に、前記金型キャビティ底面に前記ウェーハを吸着・固定する半導体ウェーハの吸着・固定工程と、
前記フィルムの張設工程時に、前記金型の他方の型面に前記フィルムを吸着・固定するフィルムの吸着・固定工程と、
前記金型キャビティ内に樹脂材料を所要量供給する樹脂材料の供給工程と、
前記金型を型締めする金型の型締工程と、
前記金型の型締工程時に、少なくとも前記金型キャビティ内を真空引きして所定の真空状態にする工程と、
前記金型の型締工程時に、前記金型の一方の型に設けた環状凸部と前記金型の他方の型に設けた環状凹部と前記環状凹部に設けた吸引排出機構とからなる固定部材において、前記環状凸部と前記環状凹部とを嵌合し且つ前記環状凹部内から前記吸引排出機構で強制的に空気等を吸引排出して前記フィルムを前記凹部内に引き込み伸張する工程と、
前記金型キャビティ内で前記樹脂材料を加熱溶融化する樹脂材料の加熱溶融化工程と、
前記金型の他方の型面に設けた押圧部材で前記フィルムを前記金型キャビティ方向に押圧する押圧部材による押圧工程と、
前記押圧部材による押圧工程時に、前記金型キャビティ内で前記バンプ先端部に前記フィルムを当接するフィルムの当接工程と、
前記押圧部材による押圧工程時に、前記フィルムを介して前記金型キャビティ内の樹脂を加圧することによって前記した半導体ウェーハのバンプ装着面を樹脂で被覆する半導体ウェーハの樹脂被覆成形工程と、
前記金型を型開きして前記金型キャビティ内から前記バンプ装着面を樹脂で被覆した樹脂被覆半導体ウェーハを離型する樹脂被覆ウェーハの離型工程とを備えたことを特徴とする半導体ウェーハの樹脂被覆方法。
The semiconductor wafer is placed at a predetermined position on the bottom surface of the resin coating mold cavity provided on one mold surface of the resin coating mold for coating the bump mounting surface of the semiconductor wafer on which the bump is mounted with resin. In the state opposite to the mold cavity bottom surface, a semiconductor wafer supply step of mounting and supplying,
A film stretching step of stretching a bump exposure film on the other mold surface of the mold,
During the semiconductor wafer supply process, the semiconductor wafer adsorption / fixing process for adsorbing and fixing the wafer to the bottom of the mold cavity;
A film adsorption / fixing step for adsorbing / fixing the film to the other mold surface of the mold during the film stretching step;
A resin material supplying step for supplying a required amount of the resin material into the mold cavity;
A mold clamping process for clamping the mold;
A step of evacuating at least the inside of the mold cavity to a predetermined vacuum state during the mold clamping process;
A fixing member comprising an annular protrusion provided on one mold of the mold, an annular recess provided on the other mold of the mold, and a suction / discharge mechanism provided on the annular recess during the mold clamping process The step of fitting the annular convex portion and the annular concave portion and forcibly sucking and discharging air or the like from the annular concave portion by the suction / discharge mechanism, and drawing and extending the film into the concave portion;
A heat-melting step of a resin material for heat-melting the resin material in the mold cavity;
A pressing step by a pressing member that presses the film in the mold cavity direction with a pressing member provided on the other mold surface of the mold; and
At the time of the pressing step by the pressing member, a film abutting step of abutting the film against the bump tip in the mold cavity;
During the pressing step by the pressing member, the resin coating molding step of the semiconductor wafer for covering the bump mounting surface of the semiconductor wafer with the resin by pressurizing the resin in the mold cavity through the film;
Of a semiconductor wafer characterized by comprising a releasing step of the resin-coated wafer to be resin-coated semiconductor wafer the release of the bump mounting surface is coated with a resin from the mold cavity by opening the mold the mold Resin coating method.
樹脂被覆用金型に複数個の固定部材を設けると共に、前記金型の型締工程時に、前記した複数個の固定部材における環状凹部内から任意且つ適宜に前記吸引排出機構で強制的に空気等を吸引排出する工程を行うことを特徴とする請求項1に記載の半導体ウェーハの樹脂被覆方法。A plurality of fixing members are provided on the resin coating mold, and air or the like is forcibly and arbitrarily forced from the annular recesses of the plurality of fixing members by the suction / discharge mechanism arbitrarily and appropriately during the mold clamping process. 2. The semiconductor wafer resin coating method according to claim 1, wherein a step of sucking and discharging the substrate is performed. 金型の型締工程時に、金型キャビティの外周囲における型面に設けた係止部材にてフィルムを係止する工程を行うことを特徴とする請求項1に記載の半導体ウェーハの樹脂被覆方法。2. The resin coating method for a semiconductor wafer according to claim 1, wherein a step of locking the film with a locking member provided on the mold surface in the outer periphery of the mold cavity is performed during the mold clamping process. .
JP06410299A 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer Expired - Fee Related JP4011781B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP06410299A JP4011781B2 (en) 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer
SG200001259A SG92685A1 (en) 1999-03-10 2000-03-07 Method of coating semiconductor wafer with resin and mold used therefor
KR1020000011433A KR100357362B1 (en) 1999-03-10 2000-03-08 Method of coating semiconductor wafer with resin and mold used therefor
EP00301890A EP1035572A3 (en) 1999-03-10 2000-03-08 Method of coating semiconductor wafer with resin and mold used therefor
MYPI20000901A MY120473A (en) 1999-03-10 2000-03-09 Method of coating semiconductor wafer with resin and mold used therefor
TW089104272A TW460989B (en) 1999-03-10 2000-03-09 Method of coating semiconductor wafer with resin and mold used therefor
US09/523,420 US6346433B1 (en) 1999-03-10 2000-03-10 Method of coating semiconductor wafer with resin and mold used therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06410299A JP4011781B2 (en) 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2000260796A JP2000260796A (en) 2000-09-22
JP4011781B2 true JP4011781B2 (en) 2007-11-21

Family

ID=13248390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06410299A Expired - Fee Related JP4011781B2 (en) 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JP4011781B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002166449A (en) * 2000-12-01 2002-06-11 Apic Yamada Corp Method and apparatus for molding resin
JP3859654B2 (en) 2003-07-31 2006-12-20 沖電気工業株式会社 Manufacturing method of semiconductor device
JP2005219297A (en) * 2004-02-04 2005-08-18 Apic Yamada Corp Method and apparatus for molding resin
US8202460B2 (en) * 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
JP5196925B2 (en) * 2007-09-13 2013-05-15 住友重機械工業株式会社 Resin sealing mold
JP5184238B2 (en) * 2008-07-17 2013-04-17 クオドラント・プラスチック・コンポジット・ジャパン 株式会社 Stamping molding method and stamping mold
US8540506B2 (en) * 2010-08-16 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor molding chamber
JPWO2013047653A1 (en) * 2011-09-30 2015-03-26 コニカミノルタ株式会社 Imaging lens unit and manufacturing method of imaging lens unit
JP5961366B2 (en) 2011-11-28 2016-08-02 東芝機械株式会社 Work setting device and work setting method
JP6096081B2 (en) * 2013-08-06 2017-03-15 アピックヤマダ株式会社 Resin sealing mold, resin sealing method, and resin sealing mold cleaning method
JP5786918B2 (en) * 2013-10-23 2015-09-30 第一精工株式会社 Resin sealing mold, resin sealing device using the same, and resin sealing method

Also Published As

Publication number Publication date
JP2000260796A (en) 2000-09-22

Similar Documents

Publication Publication Date Title
EP1396323B1 (en) Resin encapsulation molding method of electronic part and resin encapsulation molding apparatus used therefor
US7618573B2 (en) Resin sealing method for electronic part and mold used for the method
KR100357362B1 (en) Method of coating semiconductor wafer with resin and mold used therefor
JP4262468B2 (en) Resin molding method, resin molding apparatus, and support jig used therefor
JP4011781B2 (en) Resin coating method for semiconductor wafer
US6444500B1 (en) Split-mold and method for manufacturing semiconductor device by using the same
JP2005305954A5 (en)
JP2000277551A (en) Resin sealing device and method
JP2007109831A (en) Resin sealing molding method for electronic component
JP2005305954A (en) Method for molding optical element with resin sealing
TWI667119B (en) Resin sealing method and resin sealing device
JP2007109831A5 (en)
JP2004074461A (en) Method and apparatus for molding resin
JP4253393B2 (en) Semiconductor wafer resin coating method and mold
JP2007237740A (en) Photoelectron component, and method for manufacturing photoelectron component
KR101382032B1 (en) Resin seal molding method of electronic component and apparatus therefor
JP2004200269A (en) Method and device for sealing and forming resin of electronic component
JP4358501B2 (en) Resin sealing molding method for electronic parts and mold
JP2001176902A (en) Resin sealing method
JP3139981B2 (en) Resin sealing method and resin sealing device for chip size package
JP2013180461A (en) Mold for compression molding, compression molding apparatus and compression molding method
JP2002059453A (en) Method and apparatus for sealing resin
JP5027451B2 (en) Resin sealing molding method of semiconductor chip
JP6404734B2 (en) RESIN MOLDING METHOD, RESIN MOLDING MOLD, AND METHOD FOR PRODUCING MOLDED ARTICLE
JPH0621121A (en) Method and apparatus for resin sealing molding of electronic component

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060718

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070424

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070524

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070615

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070828

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070906

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130914

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees