JP4011687B2 - マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 - Google Patents

マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 Download PDF

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Publication number
JP4011687B2
JP4011687B2 JP26886297A JP26886297A JP4011687B2 JP 4011687 B2 JP4011687 B2 JP 4011687B2 JP 26886297 A JP26886297 A JP 26886297A JP 26886297 A JP26886297 A JP 26886297A JP 4011687 B2 JP4011687 B2 JP 4011687B2
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Japan
Prior art keywords
mask
mask structure
ray
exposure
titanium oxide
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Expired - Fee Related
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JP26886297A
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English (en)
Japanese (ja)
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JPH11109608A (ja
JPH11109608A5 (enExample
Inventor
啓子 千葉
日出夫 加藤
広 前原
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP26886297A priority Critical patent/JP4011687B2/ja
Priority to US09/161,372 priority patent/US6337161B2/en
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Publication of JPH11109608A5 publication Critical patent/JPH11109608A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP26886297A 1997-10-01 1997-10-01 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 Expired - Fee Related JP4011687B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP26886297A JP4011687B2 (ja) 1997-10-01 1997-10-01 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法
US09/161,372 US6337161B2 (en) 1997-10-01 1998-09-28 Mask structure exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26886297A JP4011687B2 (ja) 1997-10-01 1997-10-01 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法

Publications (3)

Publication Number Publication Date
JPH11109608A JPH11109608A (ja) 1999-04-23
JPH11109608A5 JPH11109608A5 (enExample) 2005-06-09
JP4011687B2 true JP4011687B2 (ja) 2007-11-21

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JP26886297A Expired - Fee Related JP4011687B2 (ja) 1997-10-01 1997-10-01 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法

Country Status (2)

Country Link
US (1) US6337161B2 (enExample)
JP (1) JP4011687B2 (enExample)

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KR20020006670A (ko) * 1999-03-12 2002-01-24 시마무라 테루오 노광장치 및 노광방법, 그리고 디바이스 제조방법
JP2000286187A (ja) 1999-03-31 2000-10-13 Canon Inc 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法
US6534222B1 (en) * 1999-04-20 2003-03-18 Nikon Corporation Reticles including support frame for charged-particle-beam microlithography, and methods for making same
TW480372B (en) * 1999-11-05 2002-03-21 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the apparatus, and device manufactured according to the method
US6791661B2 (en) * 1999-12-09 2004-09-14 Nikon Corporation Gas replacement method and apparatus, and exposure method and apparatus
TW464792B (en) * 2000-09-29 2001-11-21 United Microelectronics Corp A structure of optical mask
JP2002252162A (ja) * 2001-02-26 2002-09-06 Nikon Corp Ｘ線反射マスク、その保護方法、ｘ線露光装置及び半導体デバイスの製造方法
EP1256844A1 (en) * 2001-05-09 2002-11-13 ASML Netherlands B.V. Lithographic apparatus
US6594073B2 (en) * 2001-05-30 2003-07-15 Micro Lithography, Inc. Antistatic optical pellicle
KR100505283B1 (ko) * 2001-10-31 2005-08-03 미쓰이 가가쿠 가부시키가이샤 펠리클 및 펠리클 부착 마스크의 제조 방법
EP1333323A3 (en) * 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
US6731378B2 (en) * 2002-02-11 2004-05-04 International Business Machines Corporation Pellicle distortion reduction
US20030215723A1 (en) * 2002-04-19 2003-11-20 Bearinger Jane P. Methods and apparatus for selective, oxidative patterning of a surface
US6885436B1 (en) * 2002-09-13 2005-04-26 Lsi Logic Corporation Optical error minimization in a semiconductor manufacturing apparatus
WO2004040374A2 (en) * 2002-10-29 2004-05-13 Dupont Photomasks, Inc. Photomask assembly and method for protecting the same from contaminants generated during a lithography process
US7068347B2 (en) * 2002-12-20 2006-06-27 Intel Corporation Apparatus for reducing pellicle darkening
US6859330B2 (en) * 2003-06-04 2005-02-22 Intel Corporation Micromachined pellicle splitters and tunable laser modules incorporating same
US6834548B1 (en) * 2003-06-18 2004-12-28 International Business Machines Corporation Method and apparatus for reduction of high-frequency vibrations in thick pellicles
JP2005123292A (ja) * 2003-10-15 2005-05-12 Canon Inc 収納装置、当該収納装置を用いた露光方法
US20110244395A1 (en) * 2010-04-06 2011-10-06 Pei-Lin Huang Apparatus and method for haze control in a semiconductor process
KR102395197B1 (ko) 2015-09-04 2022-05-06 삼성전자주식회사 반사형 마스크용 펠리클 및 이를 포함하는 반사형 마스크 조립체
KR102715222B1 (ko) * 2016-02-19 2024-10-11 에어 워터 가부시키가이샤 화합물 반도체 기판, 펠리클막, 및 화합물 반도체 기판의 제조 방법
CN108699687B (zh) * 2016-02-19 2022-03-01 爱沃特株式会社 化合物半导体基板、表膜、和化合物半导体基板的制造方法
KR102719334B1 (ko) * 2016-04-25 2024-10-21 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피를 위한 멤브레인
CN118742853A (zh) * 2022-02-04 2024-10-01 日本轻金属株式会社 光学构件及其制造方法

Family Cites Families (12)

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US4677042A (en) 1984-11-05 1987-06-30 Canon Kabushiki Kaisha Mask structure for lithography, method for preparation thereof and lithographic method
DE3600169A1 (de) 1985-01-07 1986-07-10 Canon K.K., Tokio/Tokyo Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
US4735877A (en) 1985-10-07 1988-04-05 Canon Kabushiki Kaisha Lithographic mask structure and lithographic process
JP2535971B2 (ja) * 1987-11-05 1996-09-18 三井石油化学工業株式会社 ペリクル
ATE184711T1 (de) 1991-11-15 1999-10-15 Canon Kk Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur
JP3513236B2 (ja) 1993-11-19 2004-03-31 キヤノン株式会社 Ｘ線マスク構造体、ｘ線マスク構造体の製造方法、該ｘ線マスク構造体を用いたｘ線露光装置及びｘ線露光方法、並びに該ｘ線露光方法を用いて製造される半導体装置
TW270219B (enExample) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
US5793836A (en) * 1996-09-06 1998-08-11 International Business Machines Corporation X-ray mask pellicle
US5781607A (en) * 1996-10-16 1998-07-14 Ibm Corporation Membrane mask structure, fabrication and use
US5809103A (en) * 1996-12-20 1998-09-15 Massachusetts Institute Of Technology X-ray lithography masking
US5792578A (en) * 1997-01-13 1998-08-11 Taiwan Semiconductor Manufacturing Company Ltd. Method of forming multiple layer attenuating phase shifting masks
US5958631A (en) * 1998-02-17 1999-09-28 International Business Machines Corporation X-ray mask structure

Also Published As

Publication number Publication date
JPH11109608A (ja) 1999-04-23
US6337161B2 (en) 2002-01-08
US20010038950A1 (en) 2001-11-08

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