JP4008152B2 - 電荷結合素子およびその製造方法 - Google Patents
電荷結合素子およびその製造方法 Download PDFInfo
- Publication number
- JP4008152B2 JP4008152B2 JP13467999A JP13467999A JP4008152B2 JP 4008152 B2 JP4008152 B2 JP 4008152B2 JP 13467999 A JP13467999 A JP 13467999A JP 13467999 A JP13467999 A JP 13467999A JP 4008152 B2 JP4008152 B2 JP 4008152B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- conductive semiconductor
- gate electrode
- coupled device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 65
- 229910045601 alloy Inorganic materials 0.000 claims description 34
- 239000000956 alloy Substances 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 238000012544 monitoring process Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 238000003746 solid phase reaction Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13467999A JP4008152B2 (ja) | 1999-05-14 | 1999-05-14 | 電荷結合素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13467999A JP4008152B2 (ja) | 1999-05-14 | 1999-05-14 | 電荷結合素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000323703A JP2000323703A (ja) | 2000-11-24 |
| JP2000323703A5 JP2000323703A5 (enExample) | 2005-04-07 |
| JP4008152B2 true JP4008152B2 (ja) | 2007-11-14 |
Family
ID=15134046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13467999A Expired - Fee Related JP4008152B2 (ja) | 1999-05-14 | 1999-05-14 | 電荷結合素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4008152B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9252237B2 (en) | 2012-05-09 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistors, semiconductor devices, and methods of manufacture thereof |
-
1999
- 1999-05-14 JP JP13467999A patent/JP4008152B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000323703A (ja) | 2000-11-24 |
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