JP3995928B2 - Power module joint structure - Google Patents

Power module joint structure Download PDF

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Publication number
JP3995928B2
JP3995928B2 JP2001385432A JP2001385432A JP3995928B2 JP 3995928 B2 JP3995928 B2 JP 3995928B2 JP 2001385432 A JP2001385432 A JP 2001385432A JP 2001385432 A JP2001385432 A JP 2001385432A JP 3995928 B2 JP3995928 B2 JP 3995928B2
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Japan
Prior art keywords
power module
solder
plate
power
conductive member
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JP2003188328A (en
Inventor
尚紀 小川
崇 小島
靖 山田
雄二 八木
昭二 橋本
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Toyota Motor Corp
Toyota Central R&D Labs Inc
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Toyota Motor Corp
Toyota Central R&D Labs Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37025—Plural core members
    • H01L2224/3703—Stacked arrangements
    • H01L2224/37033—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、パワーモジュールの接合構造に関し、詳しくは、電力素子を有し、該電力素子の一方の面に熱伝導性の高い材料により形成された熱伝導部材をはんだにより接合してなるパワーモジュールの接合構造に関する。
【０００２】
【従来の技術】
従来、この種のパワーモジュールの接合構造としては、電力素子に導電性の材料（金属など）からなる導電部材をはんだ接合されてなるものが提案されている。このパワーモジュールの接合構造によれば、導電部材を介して電力素子に電力を供給することができるから、ワイヤボンディングを不要とすることができる。
【０００３】
【発明が解決しようとする課題】
しかしながら、一般的に電力素子は熱膨張率が低く、金属板などの導電部材は熱膨張率が高いから、電力素子と熱伝導部材との熱膨張率差によりはんだに作用する熱応力が大きくなり、はんだの劣化を招く。このはんだの劣化により、電力素子と熱伝導部材との熱的、電気的な接合が弱くなり、パワーモジュールとしての信頼性が低下してしまう。
【０００４】
本発明のパワーモジュールの接合構造は、こうした問題を解決し、パワーモジュールの接合に関する信頼性をより向上させることを目的の一つとする。また、本発明のパワーモジュールの接合構造は、はんだに作用する熱応力をより低く抑えることを目的の一つとする。
【０００５】
【課題を解決するための手段およびその作用・効果】
本発明のパワーモジュールの接合構造は、上述の目的の少なくとも一部を達成するために以下の手段を採った。
【０００６】
本発明のパワーモジュールの接合構造は、
電力素子を有し、該電力素子に電力を供給可能に少なくとも一部が導電性の材料により形成された導電部材を該電力素子にはんだ接合してなるパワーモジュールの接合構造であって、
前記はんだと前記導電部材の少なくとも該はんだに接触する部位は、該はんだの降伏応力と該導電部材の降伏応力との差が所定の範囲内となる材料により各々形成されてなり、前記導電部材の少なくとも該はんだに接触する部位は、アルミニウム及び／又は鉛により形成されることを要旨とする。
【０００７】
この本発明のパワーモジュールの接合構造では、電力素子に電力供給する導電部材を電力素子にはんだ接合した接合構造において、はんだと導電部材の少なくともはんだと接触する部位を、はんだの降伏応力と導電部材の少なくともはんだに接触する部位の降伏応力との差が所定の範囲内となる材料により各々形成したから、電力素子からの発熱に基づく導電部材のはんだと接触する部位の塑性変形により、はんだに過度の熱応力が作用するのを抑制することができる。この結果、はんだ接合の信頼性をより向上させることができる。
【０００８】
こうした本発明のパワーモジュールの接合構造において、前記所定の範囲内は、前記差が約７０ＭＰａの範囲内であるものとすることもできる。
【０００９】
また、本発明のパワーモジュールの接合構造において、前記導電部材は、熱伝導性の高い材料により形成されてなるものとすることもできる。こうすれば、電力素子からの熱を導電部材により放熱することができる。
【００１０】
更に、本発明のパワーモジュールの接合構造において、前記導電部材は、少なくとも、前記差が所定の範囲内となる材料により形成された導電性の第１の板材と、該第１の板材における前記はんだとの接触面とは反対の面から該第１の板材の熱膨張を規制する第２の板材とが積層された積層体であるものとすることもできる。この態様の本発明のパワーモジュールの接合構造において、前記積層体は、前記第２の板材を前記第１の板材とでサンドイッチ構造とする第３の板材を備えるものとすることもできる。
【００１１】
また、導電部材が積層体である態様の本発明のパワーモジュールの接合構造において、前記第２の板材は、その熱膨張率と前記電力素子の熱膨張率とが略同一となる材料により形成されてなるものとすることもできる。
【００１２】
上記各態様の本発明のパワーモジュールの接合構造において、前記電力素子を跨いで前記導電部材が接合された面とは異なる面に配置され、該異なる面から冷却媒体を用いて冷却する冷却手段を備えるものとすることもできる。
【００１３】
【発明の実施の形態】
次に、本発明の実施の形態について実施例を用いて説明する。図１は、本発明の一実施例のパワーモジュール２０の構成の概略を示す構成図である。実施例のパワーモジュール２０は、図示するように、絶縁基板２２にはんだ２４により実装された２つの電力素子２６，２７と、電力素子２６，２７にはんだ２８により接合され電力素子２６，２７に電力を供給する積層板３０と、絶縁基板２２の下部にはんだ２９で取り付けられた放熱板４０とを備える。
【００１４】
電力素子２６，２７は、例えば、ＩＧＢＴやパワーＭＯＳ，パワートランジスタなどのトランジスタや、ダイオードなどが該当する。
【００１５】
積層板３０は、電力素子２６，２７の線膨張係数（例えば、約３ppm/℃）と略同一の範囲内の線膨張係数（例えば、約１〜５．５ppm/℃）で剛性の高い材料（例えば、窒化アルミニウム（ＡｌＮ）やＮｉ−Ｆｅ合金（例えば、Ｎｉ３０〜４０％−Ｆｅ７０〜６０％、好ましくはＮｉ３６％−Ｆｅ６４％の重量％）、Ｎｉ−Ｃｏ−Ｆｅ合金（例えば、Ｎｉ２９〜３２％−Ｃｏ４〜１７％−Ｆｅ５１〜６７％、好ましくは、Ｎｉ３２％−Ｃｏ５．５％−Ｆｅ６２．５％や、Ｎｉ３２％−Ｃｏ４％−Ｆｅ６４％、Ｎｉ２９％−Ｃｏ１６．７％−Ｆｅ５４．３％、Ｎｉ２９％−Ｃｏ１７％−Ｆｅ５４％の重量％）など）により形成された支持板３２と、はんだ２８との高い親和性をもち降伏応力が低い材料により形成され支持板３２を両側から狭持する導電性を有する２枚の導電板３４，３６（例えば、アルミニウムや鉛などの金属など）とからなるサンドイッチ構造の積層体として構成されている。この積層板３０は、線膨張係数の低い支持板３２により線膨張係数が高い導電板３４，３６（例えば、アルミニウムでは約２５ppm/℃）の膨張を規制するから、積層板３０全体の線膨張係数としてはほぼ支持板３２の特性（線膨張係数）によって定まる値に抑えられる。したがって、積層板３０の線膨張係数と電力素子２６，２７の線膨張係数とは略同一とみなせ、これによりパワーモジュール２０の反りを抑制することができる。しかも、導電板３４の導電性により、ワイヤボンディングを必要とすることなく電力素子２６，２７に電力を供給することができる。なお、積層板３０を熱伝導性の高い材料により形成すれば、電力素子２６，２７からの熱を電力素子２６，２７の上面から放熱することができる。また、導電板３６は、製造上の観点から導電板３４と同一の材料により形成することが好ましいが、必ずしも同一の材料により形成する必要はない。また、導電板３６を設けないものとしても差し支えない。
【００１６】
放熱板４０は、熱伝導性の高い材料、例えば、ＣｕやＣｕＭｏ合金などの金属やＡｌＳｉＣなどの複合材料などにより形成されており、放熱板４０の内部に形成された流路内あるいは放熱板４０の下部に別個に形成された流路内の冷却媒体（例えば、空気や水など）との熱交換により電力素子２６，２７からの熱を放出できるようになっている。
【００１７】
こうして構成された実施例のパワーモジュール２０の接合構造に関して説明する。例えば、電力素子２６，２７と積層板３０とを接合するはんだ２８を、−４０℃で約４０ＭＰａ程度の降伏応力をもつ材料（例えば、Ｓｎ５０％−Ｐｂ５０％の重量％の材料）により形成し、積層板３０のうちはんだ２８と接触する導電板３４を、−４０℃で約１００ＭＰａ程度の降伏応力をもつ材料（例えば、アルミニウム）により形成したとき、−４０℃の冷却と１０５℃の加熱とを繰り返す冷熱サイクルを３５００サイクル実施したときでも、はんだ２８に亀裂等生じることなく電気的，熱的な接合が維持された。これは、電力素子２６，２７の駆動に伴う発熱により生じる熱応力ではんだ２８と共に導電板３２も塑性変形するから、はんだ２８に作用する熱応力が緩和されたものと考えられる。
【００１８】
別の例として、上記構成において、積層板３０の導電板３４の材料を鉛（Ｐｂ）に代えたときでも、低い降伏応力をもつ鉛は、電力素子２６，２７からの熱によりはんだ２８と共に塑性変形するから、はんだ２８に作用する熱応力を緩和でき、はんだ２８の劣化を抑制することができる。実際、上記冷熱サイクル試験を３０００サイクル程度実施したときでも、電気的，熱的な接合が維持され、はんだ２８に劣化は生じなかった。
【００１９】
更に、別の例として、上記構成おいて、電力素子２６，２７と積層板３０（導電板３４）とを接合するはんだ２８を、−４０℃で約３５ＭＰａ程度の降伏応力をもつ材料（例えば、Ｓｎ９６．５％−Ａｇ３．５％の重量％の材料）に代えたときでも、上記冷熱サイクル試験の３５００サイクルの実施に対して、電気的，熱的な接合が維持され、はんだ２８に劣化は生じなかった。
【００２０】
一方、積層板３０の導電板３４の−４０℃における降伏応力が約１００ＭＰａに対して、はんだ２８を−４０℃における降伏応力が約２０ＭＰａ程度の材料（例えば、Ｓｎ１０％−Ｐｂ９０％の重量％の材料）により形成したときには、電力素子２６，２７の発熱により導電板３４が塑性変形せずにはんだ２８に熱応力が集中し、上記冷熱サイクル実験では、約２０００サイクル程度で劣化した。
【００２１】
以上の実験により、導電板３２の降伏応力とはんだ２８の降伏応力との差が−４０℃で約７０ＭＰａの範囲内（好ましくは、−４０℃で約６０ＭＰａの範囲内）であれば、接合の信頼性が保持されることがわかった。
【００２２】
以上説明した実施例のパワーモジュール２０によれば、電力素子２６，２７に電力供給する積層板３０の導電板３４と、電力素子２６，２７と積層板３０とを接合するはんだ２８とを、電力素子２６，２７の発熱による熱応力により両者が共に変形可能な程度の降伏応力の差となる材料により各々形成したから、電力素子２６，２７の発熱によりはんだ２８に作用する熱応力を緩和でき、接合の信頼性をより向上させることができる。
【００２３】
以上、本発明の実施の形態について実施例を用いて説明したが、本発明のこうした実施例に何ら限定されるものではなく、本発明の要旨を逸脱しない範囲内において、種々なる形態で実施し得ることは勿論である。
【図面の簡単な説明】
【図１】 本発明の一実施例であるパワーモジュール２０の構成の概略を示す構成図である。
【符号の説明】
２０ パワーモジュール、２２ 絶縁基板、２４，２８，２９ はんだ、２６，２７ 電力素子、３０ 積層板、３２ 支持板、３４，３６ 導電板。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a power module joining structure, and more specifically, a power module having a power element and a heat conducting member formed of a material having high thermal conductivity on one surface of the power element by soldering. This relates to the joint structure.
[0002]
[Prior art]
Conventionally, as a joining structure of this type of power module, a structure obtained by soldering a conductive member made of a conductive material (metal or the like) to a power element has been proposed. According to the joining structure of the power module, power can be supplied to the power element through the conductive member, so that wire bonding can be made unnecessary.
[0003]
[Problems to be solved by the invention]
However, in general, power elements have a low coefficient of thermal expansion, and conductive members such as metal plates have a high coefficient of thermal expansion. Therefore, the thermal stress acting on the solder increases due to the difference in coefficient of thermal expansion between the power element and the heat conductive member. Incurs solder deterioration. Due to the deterioration of the solder, the thermal and electrical connection between the power element and the heat conducting member becomes weak, and the reliability as a power module is lowered.
[0004]
The power module joint structure of the present invention is one of the objects to solve such problems and to further improve the reliability of the power module joint. In addition, the power module joint structure of the present invention has an object of further reducing the thermal stress acting on the solder.
[0005]
[Means for solving the problems and their functions and effects]
The power module joint structure of the present invention employs the following means in order to achieve at least a part of the above-described object.
[0006]
The joint structure of the power module of the present invention is
A power module joining structure comprising a power element and soldering a conductive member formed of a conductive material at least partially to be able to supply power to the power element.
Site in contact with at least the solder of the solder and the conductive member, Ri Na are respectively formed of a material difference between the yield stress of the solder yield stress and the conductive member is within a predetermined range, the conductive member In summary , at least a portion in contact with the solder is formed of aluminum and / or lead .
[0007]
In the joining structure of the power module of the present invention, in the joining structure in which the conductive member for supplying power to the power element is soldered to the power element, at least a portion of the solder and the conductive member in contact with the solder is set to the yield stress of the solder and the conductive member. Since the difference between the yield stress at the part in contact with the solder is within a predetermined range, the solder is excessively applied to the solder due to the plastic deformation of the part in contact with the solder of the conductive member based on the heat generated from the power element. It is possible to suppress the action of thermal stress. As a result, the reliability of solder joint can be further improved.
[0008]
In such a power module joint structure of the present invention, the difference may be within a range of about 70 MPa within the predetermined range.
[0009]
In the power module joint structure of the present invention, the conductive member may be formed of a material having high thermal conductivity. In this way, heat from the power element can be radiated by the conductive member.
[0010]
Furthermore, in the joining structure of the power module of the present invention, the conductive member includes at least a conductive first plate material formed of a material in which the difference falls within a predetermined range, and the solder in the first plate material. It can also be a laminate in which a second plate that regulates the thermal expansion of the first plate is laminated from the surface opposite to the contact surface. In the power module joint structure according to this aspect of the present invention, the laminate may include a third plate member having a sandwich structure between the second plate member and the first plate member.
[0011]
Further, in the power module joint structure of the present invention in which the conductive member is a laminate, the second plate member is formed of a material whose thermal expansion coefficient and the thermal expansion coefficient of the power element are substantially the same. It can also be.
[0012]
In the joint structure of the power module of the present invention according to each of the above aspects, cooling means that is disposed on a surface different from the surface to which the conductive member is joined across the power element and cools from the different surface using a cooling medium. It can also be provided.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described using examples. FIG. 1 is a configuration diagram showing an outline of a configuration of a power module 20 according to an embodiment of the present invention. As shown in the figure, the power module 20 according to the embodiment includes two power elements 26 and 27 mounted on an insulating substrate 22 with solder 24, and joined to the power elements 26 and 27 with solder 28 and power to the power elements 26 and 27. And a heat radiating plate 40 attached to the lower portion of the insulating substrate 22 with solder 29.
[0014]
The power elements 26 and 27 correspond to, for example, transistors such as IGBTs, power MOSs, and power transistors, and diodes.
[0015]
The laminated plate 30 is made of a material having a high rigidity and a linear expansion coefficient (for example, about 1 to 5.5 ppm / ° C.) substantially in the same range as that of the power elements 26 and 27 (for example, about 3 ppm / ° C.). For example, aluminum nitride (AlN), Ni-Fe alloy (for example, Ni 30-40% -Fe 70-60%, preferably Ni 36% -Fe 64% by weight), Ni-Co-Fe alloy (for example, Ni 29-32%) -Co4-17% -Fe51-67%, preferably Ni32% -Co5.5% -Fe62.5%, Ni32% -Co4% -Fe64%, Ni29% -Co16.7% -Fe54.3%, Ni 29% -Co 17% -Fe 54% weight%)) and the like, and the solder 28 is formed of a material having a low yield stress and sandwiching the support plate 32 from both sides. Two conductive plates 34, 36 (e.g., aluminum or the like metal, such as lead) having conductivity is formed as a laminate of a sandwich structure consisting of a. Since the laminated plate 30 regulates the expansion of the conductive plates 34 and 36 (for example, about 25 ppm / ° C. in the case of aluminum) having a high linear expansion coefficient by the support plate 32 having a low linear expansion coefficient, the linear expansion coefficient of the entire laminated plate 30. As described above, the value can be suppressed to a value almost determined by the characteristic (linear expansion coefficient) of the support plate 32. Accordingly, the linear expansion coefficient of the laminated plate 30 and the linear expansion coefficients of the power elements 26 and 27 can be regarded as substantially the same, thereby suppressing the warpage of the power module 20. Moreover, due to the conductivity of the conductive plate 34, power can be supplied to the power elements 26 and 27 without the need for wire bonding. If the laminated plate 30 is formed of a material having high thermal conductivity, heat from the power elements 26 and 27 can be radiated from the upper surfaces of the power elements 26 and 27. The conductive plate 36 is preferably formed from the same material as the conductive plate 34 from the viewpoint of manufacturing, but it is not always necessary to form the conductive plate 36 from the same material. Further, the conductive plate 36 may not be provided.
[0016]
The heat radiating plate 40 is made of a material having high thermal conductivity, for example, a metal such as Cu or CuMo alloy, or a composite material such as AlSiC. The heat radiating plate 40 is formed in a flow path formed inside the heat radiating plate 40 or the heat radiating plate 40. The heat from the power elements 26 and 27 can be released by heat exchange with a cooling medium (for example, air, water, etc.) in a flow path formed separately at the lower part.
[0017]
The joining structure of the power module 20 of the embodiment configured in this way will be described. For example, the solder 28 that joins the power elements 26 and 27 and the laminated plate 30 is formed of a material having a yield stress of about 40 MPa at −40 ° C. (for example, a material of 50% by weight of Sn50% -Pb50%), When the conductive plate 34 in contact with the solder 28 in the laminated plate 30 is formed of a material (for example, aluminum) having a yield stress of about 100 MPa at −40 ° C., cooling at −40 ° C. and heating at 105 ° C. are performed. Even when 3500 repeated cooling and heating cycles were performed, the electrical and thermal bonding was maintained without causing cracks in the solder 28. This is presumably because the thermal stress acting on the solder 28 is relaxed because the conductive plate 32 is plastically deformed together with the solder 28 due to the thermal stress generated by the heat generated by driving the power elements 26 and 27.
[0018]
As another example, in the above configuration, even when the material of the conductive plate 34 of the laminated plate 30 is replaced with lead (Pb), lead having a low yield stress is plastic together with the solder 28 due to heat from the power elements 26 and 27. Since it is deformed, the thermal stress acting on the solder 28 can be relaxed and the deterioration of the solder 28 can be suppressed. In fact, even when the above-mentioned cooling / heating cycle test was carried out for about 3000 cycles, the electrical and thermal bonding was maintained and the solder 28 did not deteriorate.
[0019]
Furthermore, as another example, in the above configuration, the solder 28 for joining the power elements 26 and 27 and the laminated plate 30 (conductive plate 34) is made of a material having a yield stress of about 35 MPa at −40 ° C. (for example, Even when the material is replaced with Sn96.5% -Ag3.5% by weight of material), the electrical and thermal bonding is maintained and the solder 28 is not deteriorated with respect to the implementation of the above-mentioned 3500 cycles of the thermal cycle test. Did not occur.
[0020]
On the other hand, the yield stress at −40 ° C. of the conductive plate 34 of the laminate 30 is about 100 MPa, whereas the solder 28 is made of a material having a yield stress of about 20 MPa at −40 ° C. (for example, Sn 10% -Pb 90% by weight%). When the material is formed of the material, the conductive plate 34 is not plastically deformed due to the heat generated by the power elements 26 and 27, and the thermal stress is concentrated on the solder 28. In the above-described thermal cycle experiment, the thermal cycle deteriorates in about 2000 cycles.
[0021]
From the above experiment, if the difference between the yield stress of the conductive plate 32 and the yield stress of the solder 28 is within a range of about 70 MPa at −40 ° C. (preferably within a range of about 60 MPa at −40 ° C.), It was found that reliability was maintained.
[0022]
According to the power module 20 of the embodiment described above, the conductive plate 34 of the laminated plate 30 that supplies power to the power elements 26 and 27 and the solder 28 that joins the power elements 26 and 27 and the laminated plate 30 are connected to the power module 20. Since each of the elements 26 and 27 is formed of a material that has a difference in yield stress to the extent that both can be deformed by the heat stress due to the heat generation of the elements 26 and 27, the heat stress acting on the solder 28 due to the heat generation of the power elements 26 and 27 can be relieved. The reliability of joining can be further improved.
[0023]
The embodiments of the present invention have been described using the embodiments. However, the present invention is not limited to these embodiments and can be implemented in various forms without departing from the gist of the present invention. Of course you get.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an outline of a configuration of a power module 20 according to an embodiment of the present invention.
[Explanation of symbols]
20 Power module, 22 Insulating substrate, 24, 28, 29 Solder, 26, 27 Power element, 30 Laminated plate, 32 Support plate, 34, 36 Conductive plate.

Claims (8)

電力素子を有し、該電力素子に電力を供給可能に少なくとも一部が導電性の材料により形成された導電部材を該電力素子にはんだ接合してなるパワーモジュールの接合構造であって、
前記はんだと前記導電部材の少なくとも該はんだに接触する部位は、該はんだの降伏応力と該導電部材の降伏応力との差が所定の範囲内となる材料により各々形成されてなり、前記導電部材の少なくとも該はんだに接触する部位は、アルミニウム及び／又は鉛により形成されるパワーモジュールの接合構造。A power module joining structure comprising a power element and soldering a conductive member formed of a conductive material at least partially to be able to supply power to the power element.
Site in contact with at least the solder of the solder and the conductive member, Ri Na are respectively formed of a material difference between the yield stress of the solder yield stress and the conductive member falls within the predetermined range, the conductive member At least a portion that contacts the solder is a power module joint structure formed of aluminum and / or lead . 請求項１記載のパワーモジュールの接合構造であって、
前記所定の範囲内は、前記差が約７０ＭＰａの範囲内であるパワーモジュールの接合構造。The power module joint structure according to claim 1,
The power module joining structure in which the difference is within a range of about 70 MPa within the predetermined range. 請求項１または２記載のパワーモジュールの接合構造であって、
前記導電部材は、熱伝導性の高い材料により形成されてなるパワーモジュールの接合構造。The power module joint structure according to claim 1 or 2,
The conductive member is a power module joint structure formed of a material having high thermal conductivity. 請求項１ないし３いずれか記載のパワーモジュールの接合構造であって、
前記導電部材は、少なくとも、前記差が所定の範囲内となるアルミニウム及び／又は鉛により形成された導電性の第１の板材と、該第１の板材における前記はんだとの接触面とは反対の面から該第１の板材の熱膨張を規制する第２の板材とが積層された積層体であるパワーモジュールの接合構造。A power module joint structure according to any one of claims 1 to 3,
The conductive member is at least opposite to the contact surface between the first plate material made of aluminum and / or lead , the difference of which falls within a predetermined range, and the solder in the first plate material. A power module joining structure, which is a laminate in which a second plate that regulates thermal expansion of the first plate from the surface is laminated. 電力素子を有し、該電力素子に電力を供給可能に少なくとも一部が導電性の材料により形成された導電部材を該電力素子にはんだ接合してなるパワーモジュールの接合構造であって、
前記はんだと前記導電部材の少なくとも該はんだに接触する部位は、該はんだの降伏応力と該導電部材の降伏応力との差が所定の範囲内となる材料により各々形成されてなり、
前記導電部材は、少なくとも、前記差が所定の範囲内となる材料により形成された導電性の第１の板材と、該第１の板材における前記はんだとの接触面とは反対の面から該第１の板材の熱膨張を規制する第２の板材とが積層された積層体であるパワーモジュールの接合構造。 A power module joining structure comprising a power element and soldering a conductive member formed of a conductive material at least partially to be able to supply power to the power element.
The portions of the solder and the conductive member that are in contact with the solder are each formed of a material in which the difference between the yield stress of the solder and the yield stress of the conductive member is within a predetermined range,
The conductive member includes at least a first conductive plate formed of a material having the difference within a predetermined range, and a surface opposite to the contact surface of the first plate with the solder. A power module joining structure, which is a laminate in which a second plate material that regulates thermal expansion of one plate material is laminated. 請求項４または５記載のパワーモジュールの接合構造であって、
前記積層体は、前記第２の板材を前記第１の板材とでサンドイッチ構造とする第３の板材を備えるパワーモジュールの接合構造。 It is the joining structure of the power module according to claim 4 or 5,
The laminated body is a power module joint structure including a third plate member having a sandwich structure between the second plate member and the first plate member. 請求項４ないし６のいずか１つに記載のパワーモジュールの接合構造であって、
前記第２の板材は、その熱膨張率と前記電力素子の熱膨張率とが略同一となる材料により形成されてなるパワーモジュールの接合構造。 A power module joint structure according to any one of claims 4 to 6,
The second plate member is a power module joint structure formed of a material having a thermal expansion coefficient substantially the same as that of the power element. 請求項１ないし７いずれか１つに記載のパワーモジュールの接合構造であって、A power module joint structure according to any one of claims 1 to 7,
前記電力素子を跨いで前記導電部材が接合された面とは異なる面に配置され、該異なる面から冷却媒体を用いて冷却する冷却手段を備えるパワーモジュールの接合構造。  A power module joining structure comprising cooling means disposed on a surface different from the surface to which the conductive member is joined across the power element, and cooling using a cooling medium from the different surface.
JP2001385432A 2001-12-19 2001-12-19 Power module joint structure Expired - Fee Related JP3995928B2 (en)

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