JP3976109B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3976109B2
JP3976109B2 JP18660799A JP18660799A JP3976109B2 JP 3976109 B2 JP3976109 B2 JP 3976109B2 JP 18660799 A JP18660799 A JP 18660799A JP 18660799 A JP18660799 A JP 18660799A JP 3976109 B2 JP3976109 B2 JP 3976109B2
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Japan
Prior art keywords
group
alkyl group
carbon atoms
alicyclic hydrocarbon
positive photoresist
Prior art date
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Expired - Fee Related
Application number
JP18660799A
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English (en)
Japanese (ja)
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JP2001013686A5 (enExample
JP2001013686A (ja
Inventor
健一郎 佐藤
保雅 河辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP18660799A priority Critical patent/JP3976109B2/ja
Priority to US09/563,436 priority patent/US6596458B1/en
Priority to TW089108532A priority patent/TW546548B/zh
Priority to KR1020000025558A priority patent/KR100645847B1/ko
Publication of JP2001013686A publication Critical patent/JP2001013686A/ja
Publication of JP2001013686A5 publication Critical patent/JP2001013686A5/ja
Application granted granted Critical
Publication of JP3976109B2 publication Critical patent/JP3976109B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP18660799A 1999-05-07 1999-06-30 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Fee Related JP3976109B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP18660799A JP3976109B2 (ja) 1999-06-30 1999-06-30 遠紫外線露光用ポジ型フォトレジスト組成物
US09/563,436 US6596458B1 (en) 1999-05-07 2000-05-03 Positive-working photoresist composition
TW089108532A TW546548B (en) 1999-05-07 2000-05-04 Positive-working photoresist composition
KR1020000025558A KR100645847B1 (ko) 1999-05-07 2000-05-08 포지티브-작용 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18660799A JP3976109B2 (ja) 1999-06-30 1999-06-30 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2001013686A JP2001013686A (ja) 2001-01-19
JP2001013686A5 JP2001013686A5 (enExample) 2005-07-07
JP3976109B2 true JP3976109B2 (ja) 2007-09-12

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ID=16191541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18660799A Expired - Fee Related JP3976109B2 (ja) 1999-05-07 1999-06-30 遠紫外線露光用ポジ型フォトレジスト組成物

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JP (1) JP3976109B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4102032B2 (ja) * 2001-03-12 2008-06-18 富士フイルム株式会社 ポジ型レジスト組成物
JP4186497B2 (ja) * 2001-04-12 2008-11-26 東レ株式会社 ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP3912767B2 (ja) * 2001-06-21 2007-05-09 富士フイルム株式会社 ポジ型感光性組成物
JP4494161B2 (ja) * 2004-10-14 2010-06-30 東京応化工業株式会社 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4684740B2 (ja) * 2005-05-19 2011-05-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法

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Publication number Publication date
JP2001013686A (ja) 2001-01-19

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