JP3968129B2 - 高速パワーダイオード - Google Patents

高速パワーダイオード Download PDF

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Publication number
JP3968129B2
JP3968129B2 JP06148194A JP6148194A JP3968129B2 JP 3968129 B2 JP3968129 B2 JP 3968129B2 JP 06148194 A JP06148194 A JP 06148194A JP 6148194 A JP6148194 A JP 6148194A JP 3968129 B2 JP3968129 B2 JP 3968129B2
Authority
JP
Japan
Prior art keywords
diode
speed power
zone
power diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06148194A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06350110A (ja
Inventor
ユッツ ヨーゼフ
ショイアーマン ウーヴェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik GmbH and Co KG filed Critical Semikron Elektronik GmbH and Co KG
Publication of JPH06350110A publication Critical patent/JPH06350110A/ja
Application granted granted Critical
Publication of JP3968129B2 publication Critical patent/JP3968129B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP06148194A 1993-03-31 1994-03-30 高速パワーダイオード Expired - Lifetime JP3968129B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE4310444A DE4310444C2 (de) 1993-03-31 1993-03-31 Schnelle Leistungsdiode
DE4310444.4 1993-11-02
DE4337329.1 1993-11-02
DE4337329A DE4337329C2 (de) 1993-03-31 1993-11-02 Schnelle Leistungsdiode

Publications (2)

Publication Number Publication Date
JPH06350110A JPH06350110A (ja) 1994-12-22
JP3968129B2 true JP3968129B2 (ja) 2007-08-29

Family

ID=25924504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06148194A Expired - Lifetime JP3968129B2 (ja) 1993-03-31 1994-03-30 高速パワーダイオード

Country Status (2)

Country Link
JP (1) JP3968129B2 (de)
DE (2) DE4310444C2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421529C2 (de) * 1994-06-20 1996-04-18 Semikron Elektronik Gmbh Schnelle Leistungsdiode
JPH08125200A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE19505326A1 (de) * 1995-02-17 1996-08-29 Semikron Elektronik Gmbh Schaltungsanordnung für Kommutierungskreise, bestehend mindestens aus einem MOSFET und einer Diode mit einem weichen Schaltverhalten
DE19804580C2 (de) 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
DE19837944A1 (de) * 1998-08-21 2000-02-24 Asea Brown Boveri Verfahren zur Fertigung eines Halbleiterbauelements
DE19851461C2 (de) * 1998-11-09 2003-07-31 Semikron Elektronik Gmbh Schnelle Leistungsdiode und Verfahren zu ihrer Passivierung
EP1172862B1 (de) * 2000-07-10 2006-08-30 ABB Schweiz AG Verfahren zum Herstellen einer Leistungsdiode
DE10208965B4 (de) * 2002-02-28 2007-06-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement für Sperrspannungen über 2000V
DE102005063332B4 (de) * 2005-05-24 2009-04-02 Infineon Technologies Ag Hochschwindigkeitsdiode und Verfahren zu ihrer Herstellung
JP4856419B2 (ja) * 2005-11-29 2012-01-18 ルネサスエレクトロニクス株式会社 双方向プレーナ型ダイオード
DE102007020039B4 (de) 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
EP2081233A1 (de) 2007-12-21 2009-07-22 SEMIKRON Elektronik GmbH & Co. KG Leistungsdiode mit grabenförmigen Anodenkontaktbereich
DE102010024257B4 (de) 2010-06-18 2020-04-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement mit zweistufigem Dotierungsprofil
JP5450490B2 (ja) * 2011-03-24 2014-03-26 株式会社東芝 電力用半導体装置
US9093568B1 (en) 2014-04-16 2015-07-28 Infineon Technologies Ag Semiconductor diode
DE102017002936A1 (de) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V-Halbleiterdiode
US10193000B1 (en) 2017-07-31 2019-01-29 Ixys, Llc Fast recovery inverse diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668860A5 (de) * 1986-02-05 1989-01-31 Bbc Brown Boveri & Cie Halbleiterbauelement und verfahren zu dessen herstellung.
DE3942967A1 (de) * 1989-12-23 1991-06-27 Semikron Elektronik Gmbh Schnelle leistungsdiode

Also Published As

Publication number Publication date
DE4310444C2 (de) 1995-05-11
DE4337329A1 (de) 1995-05-04
JPH06350110A (ja) 1994-12-22
DE4310444A1 (de) 1994-10-06
DE4337329C2 (de) 1999-12-23

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