JP3959723B2 - Processing control method of crystal vibrating piece - Google Patents

Description

  The present invention is to barrel-process a crystal vibrating piece used in a crystal device such as a crystal resonator or a crystal oscillator so as to process the sub-vibration and the main vibration so as to have an appropriate frequency difference. It relates to the processing management method.

Many crystal units such as HDDs (hard disk drives), small computers such as mobile computers or IC cards, mobile communication devices such as mobile phones, car phones, and paging systems A crystal device is used. As a crystal vibrating piece used in such a crystal device, an AT-cut crystal piece obtained by AT-cutting a crystal wafer having a predetermined crystal structure is often used.
FIG. 23 shows an example of such a crystal vibrating piece.
As shown in FIG. 23, the quartz crystal resonator element 1 appropriately determines a dimension d in the length direction X, a dimension w in the width direction Z, and a dimension t in the thickness direction Y, and mainly has a CI (crystal impedance) value. In order to adjust, the corners of the end face in the X direction and / or the Y direction are ground or polished (hereinafter referred to as “end face processing”) and are subjected to a convex treatment.

In this case, the polishing work is very delicate, and the polishing amount affects not only the CI characteristics but also the electrical characteristics such as spurious characteristics. It is being considered.
For example, according to Japanese Patent No. 2864242 (Japanese Patent Laid-Open No. 63-15510) (see Patent Document 1), the side ratio d / w of the length d to the width w of the crystal vibrating piece 1 is set to 3.52 to 5.40. As shown in FIG. 24, there is disclosed a method of performing surface processing so that the frequency difference Δf between the main vibration f0 and the sub-vibration fs of the quartz crystal vibrating piece 1 has a predetermined relationship.

In this method, as shown in FIG. 24, the frequency difference Δf between the main vibration f0 and the closest sub vibration fs is a problem. As long as the sub-vibration fs closest to the main vibration f0 is targeted, the frequency difference Δf at which the CI value of the main vibration f0 is the smallest becomes an exponential function as the frequency of the main vibration increases. From this, a predetermined relational expression is derived, and an appropriate frequency difference Δf is derived.
That is, the sub-vibration fs that is a problem in Patent Document 1 is a thickness-slip inharmonic vibration that occurs with respect to the main vibration f0, and is the sub-vibration closest to the main vibration f0.

Japanese Patent No. 2864242

However, as described in Patent Document 1, such a technique targets at least the sub-vibration fs closest to the main vibration f0 of the crystal vibrating piece 1 having a specific side ratio d / w. It is effective only when controlling the frequency difference Δf, and there is a problem that it is difficult to employ a crystal vibrating piece that does not meet such conditions.
In Patent Document 1, since the relational expression is derived from the end face processing for the quartz crystal resonator piece and the frequency difference Δf, and the energy of the main vibration can be confined appropriately based on the relational expression, the CI characteristic is obtained. The content can be improved. In the description of the specification, although there is a mention that the end surface processing has an effect on the spurious characteristics, it is clearly described as to what specific means to improve the spurious characteristics. Not. This is because the amount of machining with the smallest CI value is not necessarily good in spurious characteristics, and this is a technique based on the above relational expression used by the invention described in Patent Document 1, and the spurious characteristics are reduced. It is none other than what can always be good.

In order to explain this point, the principle of the technique disclosed in Patent Document 1 will be described first.
In the description of the specification of this Patent Document 1, although not necessarily clarified, the present inventor has not found between the main vibration f0 of the crystal vibrating piece 1, the sub-vibration fs and its frequency difference Δf, and end face processing. From the above considerations, it is considered that there is the following relationship.
25 and FIG. 26 are plan views of the crystal vibrating piece 1. In FIG. 25, a region where the main vibration f <b> 0 vibrates is indicated by A <b> 1 in the crystal vibrating piece 1. In this case, with respect to the main vibration f <b> 0, the vibrating region covers a relatively wide range at the central portion of the crystal vibrating piece 1.
In FIG. 26, for the crystal vibrating piece 1, a region where the secondary vibration fs vibrates is indicated by A <b> 2 to A <b> 4. In this case, the region where the sub-vibration fs vibrates is A2, A3, and A4 arranged along the X direction of the crystal vibrating piece 1.
In the quartz crystal resonator element 1, vibrations having different vibration regions are observed as a main vibration f0 and a sub vibration fs as shown in FIG. Therefore, this secondary vibration is a third-order thickness slip in harmonic vibration in the X direction.

Next, FIG. 28 and FIG. 29 show the change when the end face processing is performed on both ends in the X direction of the crystal vibrating piece 1 and the polishing is advanced as described in the above-mentioned prior application invention. It is a figure for demonstrating.
When the end face processing is advanced and the polishing amount is increased, as shown in FIG. 28, the region involved in the main vibration is confined in a narrower region at the center of the crystal vibrating piece 1 as shown by CA1. Accordingly, as shown in FIG. 30, the main vibration Cf0 changes so that its frequency gradually increases as shown by the arrow.
Similarly, when the end face processing of the crystal vibrating piece 1 is advanced and the polishing amount is increased, as shown in FIG. 29, the regions involved in the secondary vibration are the crystal vibrating piece 1 as shown by CA2, CA3, CA4. The three vibration regions arranged along the X direction become narrower. Accordingly, as shown in FIG. 30, the secondary vibration Cfs changes so that its frequency gradually increases as shown by the arrow.

  Such a process is considered to be performed in the end face processing in the above-mentioned prior invention, and the important thing here is that the frequency change of the main vibration that changes as the end face processing proceeds is the same as the frequency change of the sub vibration. It is not a point. For this reason, the end face processing is performed on the crystal vibrating piece 1 to increase the polishing amount, whereby the frequency difference CΔf gradually increases. Thereby, in the prior invention, the frequency difference Δf between the main vibration f0 and the sub-vibration fs is changed, and the frequency difference Δf to be controlled is merely the frequency difference between the main vibration f0 and the closest sub-vibration fs. Only.

On the other hand, as shown in FIG. 31, the crystal vibrating piece 5 which is the mainstream in recent years is different from the crystal vibrating piece 1 of FIG. 20, and the side ratio Cd / Cw between the length Cd and the width Cw is 1.2. It is about 3 or so and is significantly different from the above-mentioned side ratio of 3.52 to 5.40 of the invention of the prior application.
That is, in the quartz vibrating piece 5, the ratio of the size in the width direction is larger than that of the quartz vibrating piece 1. For this reason, the method disclosed in Patent Document 1 cannot be applied as it is.

Specifically, in the case of the quartz crystal resonator element 5, it is considered that side vibrations of different modes occur as shown in the plan views of FIGS.
That is, the sub-vibration in FIG. 32 is the third-order thickness-slip inharmonic vibration in the X direction generated by the three regions XA1, XA2, and XA3 arranged along the X direction of the quartz crystal vibrating piece 5 being involved in the vibration ( Hereinafter, it is referred to as “X-direction secondary vibration” or “first secondary vibration mode”).
33 is the third-order thickness-slip in-harmonic vibration in the Z direction that is generated when the three regions ZA1, ZA2, and ZA3 arranged along the Z direction of the crystal vibrating piece 5 are involved in the vibration. Hereinafter, it is referred to as “Z-direction secondary vibration” or “second secondary vibration mode”).

Therefore, as shown in FIG. 34, in the case of the quartz crystal vibrating piece 5, two types of secondary vibrations fs1 and fs2 are observed in addition to the main vibration f0.
For this reason, in order to control the frequency difference Δf between the main vibration f0 and the closest sub-vibration fs1, even if the end face machining is advanced, another sub-vibration fs2 exists, and as described above, depending on the progress of the end face machining. Since these cause frequency changes at different rates, Δf cannot be controlled appropriately.
Further, from the observation result of FIG. 34, there is a problem that it is impossible to distinguish which of the secondary vibrations fs1 and fs2 is the X-direction secondary vibration and the Z-direction secondary vibration.
Actually, the above-described third-order thickness-slip in-harmonic vibration in the X direction and the Z direction also occurs in the quartz crystal resonator element 1 having a side ratio of 3.52 to 5.40, which is a problem of the prior invention. However, with the size of the quartz crystal resonator element 1, the third-order thickness-slip inharmonic vibration in the X direction is generated at a relatively small frequency compared to the frequency of the third-order thickness-slip inharmonic vibration in the Z direction. Since the sub-vibration closest to the vibration f0 is always the third-order thickness-slip inharmonic vibration in the X direction, the method of the prior invention that targets the sub-vibration closest to the main vibration f0 is effective.
However, when the side ratio Cd / Cw is about 1.2 to 3 as in the crystal vibrating piece 5, the frequency at which the third-order thickness-slip inharmonic vibrations in the X direction and the Z direction approach each other Therefore, due to other conditions, each third-order thickness-slip inharmonic vibration in the Z direction may have a lower frequency than each third-order thickness-slip inharmonic vibration in the X direction. It is necessary to distinguish between the X-direction secondary vibration and the Z-direction secondary vibration.

  An object of the present invention is to solve the above-described problem, and an object of the present invention is to provide a processing management method in the case of processing a crystal vibrating piece by barrel processing.

According to the first aspect of the present invention, in the processing management method for barrel-processing a substantially rectangular crystal vibrating piece, the crystal vibrating piece and the abrasive are put into a barrel processing apparatus for a predetermined time (T1 time). ) Then, the quartz crystal resonator element is taken out for each processing lot, and the frequency difference ΔSX1 between the main vibration and the first sub vibration and / or the frequency difference ΔSZ1 between the main vibration and the second sub vibration are measured. The first measurement is performed, and then barrel processing is further performed for a predetermined time (T2 hours). Then, the crystal vibrating piece is taken out in units of each processing lot, and the frequency difference between the main vibration and the first sub vibration is obtained. A second measurement is performed to measure ΔSX2 and / or a frequency difference ΔSZ2 between the main vibration and the second sub-vibration. Based on the measurement results of the first measurement and the second measurement, the remaining in each processing lot unit Calculate machining time T3, Deeds only barreling remaining processing time T3, after processing by the remaining processing time T3, removed the crystal vibrating piece in each machining batches, the frequency difference ΔSX3 and the main vibration of the main vibration and a first secondary vibration The frequency difference ΔSZ3 between the first sub-vibration and the second sub-vibration is measured and compared with the standard values of the frequency difference ΔSX and the frequency difference ΔSZ. The comparison values of the frequency difference ΔSX3 and the frequency difference ΔSZ3 of the quartz crystal resonator element are When the value is larger than the upper limit value in the allowable range , it is achieved by the processing management method of the quartz crystal vibrating piece for ending the barrel processing .

FIG. 1 is a schematic perspective view of a crystal vibrating piece to which a processing management method according to an embodiment of the present invention is applied.
The crystal resonator element 10 of FIG. 1 is basically the same crystal resonator element as that described in FIG. 31, and in particular, the side ratio Cd / Cw between the length Cd and the width Cw is 1.2 to About three. An electrode is formed on the surface of such a crystal vibrating piece 10 with a predetermined conductive metal.
In this embodiment, the crystal resonator element 10 has a length Cd of about 3600 μm and a width Cw of about 1600 μm, for example.

Further, the end portion in the X direction which is the longitudinal direction of the quartz crystal vibrating piece 10, that is, the end surface of the side 11 is subjected to so-called convex processing by polishing the corner portion serving as the ridgeline, and FIG. As shown in FIG. 4, the area NA related to the main vibration of the quartz crystal vibrating piece 10 is a portion that is avoided from the peripheral area of the quartz crystal vibrating piece 10.
This is also because, as shown in FIG. 2, the region involved in the main vibration, that is, the region NA that vibrates during the main vibration is avoided from the corners 11a and 11a at the end portions in the longitudinal direction. Will do. The corner portions 11a and 11a are formed by using a conductive adhesive or the like with respect to the electrodes in the package when the crystal vibrating piece 10 is mounted in the package in order to form, for example, a crystal resonator. It corresponds to the fixed part. Therefore, the increase in the CI value in the main vibration can be suppressed by avoiding the portion fixed in this way from the region related to the main vibration.
Of course, not only the short sides 11 and 11 but also the long sides 12 and 12 may be processed.

FIGS. 3 and 4 show vibration regions involved in two different types of sub-vibration modes in the crystal vibrating piece 10, and the sub-vibration in FIG. 3 is along the X direction (longitudinal direction) of the crystal vibrating piece 10. This is a third-order thickness-slip in-harmonic vibration in the X direction generated by the three regions XNA1, XNA2, and XNA3 participating in vibration (hereinafter referred to as “X-direction sub-vibration” or “first sub-vibration mode”). "). In this case, when XNA2 has a positive charge, XNA1, XNA3 has a negative charge distribution.
The sub-vibration in FIG. 4 is the third-order thickness in the Z direction generated when the regions ZNA1, ZNA2, and ZNA3 divided into three along the Z direction (width direction) of the crystal vibrating piece 10 are involved in the vibration. This is slip-in harmonic vibration (hereinafter referred to as “Z-direction secondary vibration” or “second secondary vibration mode”). In this case, when ZNA2 has a positive charge, ZNA1, ZNA3 has a negative charge distribution.
These side vibrations are the same as those described with reference to FIGS. 32 and 33. Therefore, the measurement results of the frequencies of these side vibrations are the same as the frequency characteristics shown in FIG.

Here, the present inventors have found that the first and second sub-vibration modes having different types and the end face machining amount have the following relationship.
Here, when the dimension in the X direction of the piezoelectric vibrating piece is X0, the dimension in the Z direction is Z0 (X0 and Z0 are effective dimensions effective for vibration), and the thickness dimension is t, f0 is an infinite flat plate. When the resonance frequency is set, C11, C55, and C66 are elastic constants, p is a charge distribution order in the X direction, r is a charge distribution order in the Z direction, and n is an overtone order, an AT-cut crystal resonator (crystal The thickness-slip resonance frequency f of the resonator element is expressed by the following formula (formula (1)) (“Crystal Frequency Control Device”, published by Techno Co., Ltd., Shotaro Okano).

(Resonance frequency) f = n × f0 × [1+ {C11 / (2 × C66)}
× {(p × t) / (n × X0)} ² + {C55 / (2 × C66)}
× {(r × t) / (n × Z0)} ² ] (1) Here, since the vibration mode of interest is a first-order vibration, n = 1, and the value of each elastic constant is If you put
f = f0 × [1 + 1.461 × {(p × t) / X0} ² + 1.145 × {(r × t) / Z0} ² ] (2)

The X-direction tertiary thickness-slip inharmonic vibration is p = 3, r = 1, and the Z-direction tertiary thickness-slip inharmonic vibration is p = 1, r = 3, and these are substituted.
That is, the X direction tertiary thickness slip-in harmonic vibration fx3 is
fx3 = f0 × {1 + 1.461 × (9 × t ² ) / X0 ² + 1.145 × t ² / Z0 ² } (3) Formula Z-direction tertiary thickness-slip in-harmonic vibration fz3 is
fz3 = f0 × {1 + 1.461 × t ² / X0 ² + 1.145 × (9 × t ² ) / Z0 ² } Equation (4) Also, the main vibration f is p = 1, r = 1 so
f = f0 × {1 + 1.461 × t ² / X0 ² + 1.145 × t ² / Z0 ² }
... (5)

Therefore, the frequency difference ΔSX between the X-direction tertiary thickness-slip in-harmonic vibration (first sub-vibration mode) and the main vibration, and the Z-direction tertiary thickness-slip in-harmonic vibration (second sub-vibration mode) and the main vibration. If the frequency difference ΔSZ,
ΔSX = f0 × 1.461 × (8 × t ² ) / X0 ² (6) ΔSZ = f0 × 1.145 × (8 × t ² ) / Z0 ² Here, the thickness of the quartz crystal vibrating piece, which is t, is a variable as compared with X0 and Z0. However, in the processing method of this embodiment, there is almost no change, for example, the dimension in the X direction. While the dimension Z0 in the X0 and Z directions changes from several hundred μm to several thousand μm by processing, the thickness t is not processed by several μm, so the change in the thickness t by CV processing is the X direction in the X direction and the Z direction. The thickness t can be regarded as a constant since it is sufficiently smaller than the change in the dimension Z0 and can be ignored. Therefore,
ΔSX = A / X0 ² (8) Equation ΔSZ = B / Z0 ² (9) Equation (9) Here, A and B are respectively A = f0 × 1.461 × (8 × t ² ) (10) Equation B = f0 × 1.145 × (8 × t ² )・ ・ Expression (11)

  Thus, from equation (8), ΔSX has a correlation with the effective dimension in the X direction, and from equation (9), it can be seen that ΔSZ has a correlation with the effective dimension in the Z direction. ΔSX is fs1 in FIG. 34, and ΔSZ is fs2 in FIG. The method of the present embodiment is based on the investigation by the inventors of the correlation between the first sub vibration mode ΔSX and the second sub vibration mode ΔSZ and the effective dimension in the X direction and the effective dimension in the Z direction, respectively. Thus, two sub-vibration modes corresponding to the X direction and the Y direction are determined, and an appropriate end face machining amount is determined based on the determination.

  That is, the graph of FIG. 5 represents the temperature characteristic of the resonance frequency of the crystal vibrating piece 10, and the resonance frequency of the crystal vibrating piece 10 changes as shown in the graph of FIG. . A straight line L in FIG. 5 indicates spurious vibration. When the spurious vibration approaches the main vibration, which is the resonance frequency, in a specific temperature environment as illustrated, the main vibration and the spurious vibration resonate and operate. Cause a defect. Therefore, the type of the spurious vibration mode of the straight line L is correctly determined, and the X direction or the Z direction of the end face machining is determined and the machining is correctly performed as shown in FIG. In this way, the spurious vibration does not affect the main vibration.

Next, a processing apparatus that performs end surface processing of the crystal vibrating piece 10 will be described.
6 is a schematic cross-sectional view showing a configuration of a first barrel processing apparatus for performing end face processing, FIG. 7 is a longitudinal cross-sectional view showing a part of the first barrel processing apparatus in FIG. 6, and FIG. The barrel simple substance with which a 1st barrel processing apparatus is equipped is shown, (a) is a schematic perspective view, (b) is the schematic longitudinal cross-sectional view. In FIG. 6, the first barrel processing apparatus 20 has an exterior drum 21 having a main rotation shaft 22, and the exterior drum 21 rotates in the direction of arrow A about the main rotation shaft 22. ing.

A plurality of drums 24 are housed in the housing portion of the exterior drum 21. In this case, a plurality of, for example, four drums 24 are arranged around the main rotating shaft 22 of the exterior drum 21 while maintaining an equal distance.
Each drum 24 is rotated in the direction of arrow B while being held by the exterior drum 21. Further, as shown in FIG. 7, each drum 24 is a cylindrical body that is slightly longer in one direction, has a space inside, and accommodates a plurality of barrels 25.
The drum shaft 23 of the drum 24 is fixed so as to have an inclination of, for example, about 14 degrees with respect to the length direction of the drum body. For this reason, when the drum 24 is housed in the exterior drum 21 of FIG. 6, the drum shaft 23 is positioned parallel to the main rotation shaft 22 of the exterior drum 21, so that Is held in an inclined state.

  The barrel 25 accommodated in each drum 24 is held by a cylinder as shown in FIG. As shown in FIG. 8, the inside of the barrel 25 has a spherical curved surface 26 that mainly performs polishing and a flat surface 27 that mainly does not contribute to polishing. Inside the barrel 25, a quartz crystal vibrating piece 10 which is a work to be polished as an end face processing and an abrasive 28 are accommodated and a polishing operation is performed.

Next, a method for processing an end face using the first barrel processing apparatus 20 will be schematically described.
First, as shown in the rightmost barrel 25 in FIG. 8B, the quartz crystal vibrating piece 10 and the abrasive 28 are put in each barrel 25 and accommodated in the drum 24. And this drum is arrange | positioned in the exterior drum 21, as FIG. 6 shows. Next, when the exterior drum 21 is rotated in the direction of arrow A at a high speed, each drum 24 rotates around the main rotation shaft 22. Further, each drum 24 rotates around each drum shaft 23 as indicated by an arrow B.

  Thereby, in each barrel 25, the quartz crystal vibrating piece 10 and the abrasive 28 are pressed against the inner surface of the barrel 25 by the action of centrifugal force. In this case, the quartz crystal resonator element 10 is chamfered by polishing the corner portions which are eight ridge lines corresponding to the curvature of the spherical curved surface 26 of the barrel 25 by the abrasive 28. Further, by reversing the rotation direction of the exterior drum 21, the surface of the crystal vibrating piece 10 to be polished is reversed, and uniform polishing is performed. In addition, since each barrel 25 is supported at an inclination, the quartz crystal vibrating piece 10 is easily inverted inside, and a more uniform end face processing can be performed.

  And in this 1st barrel processing apparatus 20, since the inner surface of the barrel 25 is the concave spherical curved surface 26, the short sides 11 and 11 and the long sides 12 and 12 (refer FIG. 1) of the crystal vibrating piece 10 are processed. Since the ratio is constant, based on the rectangular shape of the quartz crystal vibrating piece 10, the ratio of processing the short sides 11 and 11 in the longitudinal direction (X direction) increases.

On the other hand, FIGS. 9 to 11 show the second barrel processing apparatus 50.
FIG. 9 is a schematic cross-sectional view showing a configuration of a second barrel processing apparatus for performing end face processing, and FIG. 10 is a schematic perspective view showing a cylindrical workpiece incorporated in the second barrel processing apparatus of FIG. FIG. 11 is an explanatory diagram showing a state in which the quartz crystal vibrating piece 10 is processed in the processing body.
In FIG. 9, the second barrel processing apparatus 50 has an exterior drum 51 having a rotation shaft 52, and the exterior drum 51 rotates in the direction of arrow A around the rotation shaft 52. .

A plurality of processed bodies 54 are accommodated in the exterior drum 51. In this case, a plurality of, for example, four workpieces 54 are arranged in the exterior drum 51 so as to be equidistant around the rotation shaft 52. The processed bodies 54 are each rotated in the direction of arrow B while being accommodated in the exterior drum 51.

  As shown in FIG. 10, the processed body 54 is formed of a cylindrical body that is slightly long in one direction. The quartz crystal resonator element 10 and a polishing material (not shown) are introduced from the opening into the cylinder 54, and the quartz resonator element 10 is inserted into the end face by the inner surface of the workpiece 54 by closing the opening. It is to be processed.

As shown in FIG. 11, the inner surface 54a of the processed body 54 is a concave curved surface of a cylindrical body, and the inner surface 54a is a processed surface. Unlike the spherical curved surface 26 of the barrel 25 of the first barrel processing apparatus 20, the inner surface 54a has directionality.
For this reason, the quartz crystal vibrating piece 10 thrown into the processed body 54 is stabilized in the posture as shown in the upper part of FIG. 11 with the curved surface along the inner surface 54 a of the processed body 54. For this reason, when the quartz crystal vibrating piece 10 is relatively rotated within the workpiece 54, the Z direction is easily chamfered. That is, the crystal vibrating piece 10 is processed so that the long sides 12 and 12 thereof are more processed than the short sides 11 and 11 in the processed body 54.
In this way, the end face processing of the crystal vibrating piece 10 in the X direction and the Z direction can be selectively performed by appropriately using the first barrel processing apparatus 20 and the second barrel processing apparatus 50. is there.

FIG. 12 shows a gap type frequency measuring device (hereinafter referred to as “measuring device”) for measuring the secondary vibration mode of the quartz crystal vibrating piece 10 as the secondary vibration measuring device used in the processing management method according to the embodiment of the present invention. (Abbreviated) is shown.
In the figure, the measuring device 30 includes an oscillator 31 and an upper electrode 32 and a lower electrode 33 as a pair of electrodes connected to the oscillator 31.

In the measuring apparatus 30, the crystal vibrating piece 10 can be disposed on the lower electrode 33 and the resonance frequency can be measured. In addition, in this device, the resonance frequency of the quartz crystal vibrating piece 10 can be measured in a blank state before the electrodes are formed.
That is, the crystal vibrating piece 10 is disposed on the lower electrode 33, and the upper electrode 32 is disposed with a slight gap therebetween. Then, by applying a driving voltage between the upper electrode 32 and the lower electrode 33, the quartz crystal vibrating piece 10 can be excited and its resonance frequency can be measured.

FIG. 13 shows a state of the upper electrode 32 and the quartz crystal vibrating piece 10 positioned below the upper electrode 32 when viewed through the upper electrode 32. In FIG. Although the same as that shown in FIGS. 1 to 4, the ratio of the long side to the short side is not accurately shown in the drawing.
FIG. 13A is a top view of the state in which the crystal vibrating piece 10 is excited in the vibration mode of the main vibration, and FIG. 13B is the state in which the crystal vibrating piece 10 is excited in the vibration mode of the first sub vibration. FIG. 13C is a top view in a state where the quartz crystal vibrating piece 10 is excited in the second sub-vibration vibration mode.

The upper electrode 32 (hereinafter referred to as “measurement electrode”) 32 shown in FIG. 13 is conventionally used and is formed in a circular shape having a relatively large diameter with respect to the size of the quartz crystal vibrating piece 10. . Thereby, it can be set as the magnitude | size which covers the whole quartz crystal vibrating piece 10. FIG.
However, when such a measurement electrode 32 is used, not only the main vibration f0 but also the two sub vibration modes fs1 and fs2 are measured as described in FIG. It is not possible to distinguish which secondary vibration mode.
As described above, the different sub-vibration modes cannot distinguish the region involved in the vibration of the quartz crystal vibrating piece 10, that is, the difference in charge distribution on the surface of the quartz crystal vibrating piece 10 by the measurement electrode 32. It is due to that.

There, two different types of measurement electrodes are prepared, and the types of sub-vibration modes are distinguished.
FIG. 14 shows the first measurement electrode, and FIG. 14A shows a state in which the quartz crystal vibrating piece 10 is excited in the first sub-vibration mode (X-direction tertiary thickness shear in-harmonic vibration). FIG. 14B is a top view of the state in which the crystal vibrating piece 10 is excited in the second sub-vibration mode (Z-direction tertiary thickness-slip inharmonic vibration).

  In FIG. 14A, the first measurement electrode 41 is made of, for example, brass as a conductive metal material as a whole, and the shape thereof is an elongated rectangular parallelepiped or a circle, and the end portion has an appropriate dimension. It is a rectangle with The first measurement electrode 41 is for measuring a first sub-vibration mode (X-direction tertiary thickness-slip inharmonic vibration) having a plurality of vibration regions divided by different charges along the longitudinal direction of the crystal piece. Therefore, as shown in FIG. 14A, the dimension AL in the X direction of the vibration areas XA1, XA2, and XA3 when the quartz crystal vibrating piece 10 vibrates in the first sub vibration mode. It has a larger dimension Ed1 in the X direction. In addition, as shown in FIG. 14B, the first measurement electrode 41 has vibration regions ZA1, ZA2, and ZA3 in the Z direction when the crystal vibrating piece 10 vibrates in the second sub vibration mode. The dimension Ew1 in the Z direction is smaller than the dimension AW.

At least the first measurement electrode 41 has a dimension Ed1 in the X direction that is not less than 0.8 times the dimension cd in the X direction of the crystal vibrating piece 10 and a dimension Ew1 in the Z direction of the first measurement electrode. Is 0.3 to 0.7 times the dimension dw in the Z direction of the crystal vibrating piece 10.
Thus, when the first measurement electrode 41 is used, only one sub-vibration fs1 is measured in addition to the main vibration f0, as shown in FIG.

Here, in the secondary vibration fs1 in FIG. 15, as shown in FIG. 14A, the first measurement electrode 41 covers the vibration region of the quartz crystal vibrating piece 10 in the first secondary vibration. Thus, the first sub-vibration, that is, the X-direction tertiary thickness slip-in harmonic vibration is specified.
On the other hand, in the first measurement electrode 41, as shown in FIG. 14B, the vibration regions ZA1, ZA2, and ZA3 in the case where the crystal vibrating piece 10 vibrates in the second sub vibration mode. Of these, the two regions ZA1 and ZA3 cover only about half of each area, and the amount of all charges generated in these two regions cannot be covered. Z-direction tertiary thickness slip-in harmonic vibration is not measured.

As described above, the first electrode 41 measures only the frequencies of the main vibration f0 and the first sub-vibration fs of the quartz crystal vibrating piece 10, and prevents measuring the frequencies of the other sub-vibrations. .
Here, when the dimension Ed1 in the X direction of the first measurement electrode 41 is smaller than 0.8 times the dimension cd in the X direction of the crystal vibrating piece 10, the main vibration and the sub vibration in the X direction are hardly observed. There are harmful effects. Further, when the dimension Ew1 in the Z direction of the first measurement electrode 41 is smaller than 0.3 times the dimension dw in the Z direction of the quartz crystal vibrating piece 10, the main vibration and the sub vibration in the X direction are hardly observed, In the case where it exceeds 0.7 times the dimension dw in the Z direction of the quartz crystal vibrating piece 10, there is an adverse effect that the secondary vibration in the Z direction is observed simultaneously with the secondary vibration in the X direction.

  FIG. 16 shows the second measurement electrode, and FIG. 16A shows a state in which the crystal vibrating piece 10 is excited in the first sub-vibration mode (X-direction tertiary thickness-slip in-harmonic vibration). FIG. 16B is a top view of the state in which the quartz crystal vibrating piece 10 is excited in the second sub-vibration mode (Z-direction tertiary thickness-slip inharmonic vibration).

  In FIG. 16A, the second measurement electrode 42 is made of, for example, the same material as the first measurement electrode 41 described above, and the shape thereof is an elongated rectangular parallelepiped or a circle, and the end is appropriate. It is a rectangle with various dimensions. The second measurement electrode 42 measures a second sub-vibration mode (Z-direction tertiary thickness shear in-harmonic vibration) having a plurality of vibration regions divided by different charges along the width direction of the quartz crystal resonator element. Therefore, as shown in FIG. 16A, the dimensions of the vibration areas XA1, XA2, and XA3 in the X direction when the quartz crystal vibrating piece 10 vibrates in the first sub vibration mode. The dimension Ed2 in the X direction is smaller than AL. In addition, as shown in FIG. 16B, the second measurement electrode 42 is arranged in the Z direction of the vibration regions ZA1, ZA2, and ZA3 when the crystal vibrating piece 10 vibrates in the second sub vibration mode. It has a dimension Ew2 in the Z direction larger than the dimension AW.

At least the second measurement electrode 42 has a dimension Ed2 in the X direction that is 0.3 to 0.7 times the dimension Cd in the X direction of the crystal vibrating piece 10 and the second measurement electrode 42. The dimension Ew2 in the Z direction of the electrode 42 is set to be 0.8 times or more the dimension dw in the Z direction of the crystal vibrating piece 10.
Accordingly, when the second measurement electrode 42 is used, only one sub-vibration fs2 is measured in addition to the main vibration f0 as shown in FIG.

Here, in the secondary vibration fs2 in FIG. 17, as shown in FIG. 16B, the second measurement electrode 42 covers the vibration region in the Z direction of the crystal vibrating piece 10 in the second secondary vibration. Therefore, it is specified that the second sub-vibration, that is, the Z-direction tertiary thickness slip-in harmonic vibration.
On the other hand, in the second measurement electrode 42, as shown in FIG. 16A, the vibration regions XA1, XA2, and XA3 in the case where the quartz crystal vibrating piece 10 vibrates in the first auxiliary vibration mode. Of these, the two regions XA1 and XA3 cover only about half of each area, and the amount of all the charges generated in these two regions cannot be covered. X-direction tertiary thickness slip-in harmonic vibration is not measured.
As described above, the second electrode 42 measures only the frequencies of the main vibration f0 and the second sub-vibration fs of the quartz crystal vibrating piece 10, and prevents the measurement of other sub-vibration frequencies. . Only the second sub-vibration of the quartz crystal vibrating piece 10 can be measured.

  Here, when the dimension Ed2 in the X direction of the second measurement electrode 42 is smaller than 0.3 times the dimension Cd in the X direction of the quartz crystal vibrating piece 10, the main vibration and the sub vibration in the Z direction are hardly observed, When exceeding 0.7 times the dimension Cd in the X direction of the quartz crystal vibrating piece, there is an adverse effect that the secondary vibration in the X direction is observed simultaneously with the secondary vibration in the Z direction. Further, when the dimension Ew2 in the Z direction of the second measurement electrode 42 is smaller than 0.8 times the dimension Aw in the Z direction of the quartz crystal vibrating piece 10, the main vibration and the sub vibration in the Z direction are hardly observed. There is.

When the dimension cd in the X direction of the crystal vibrating piece 10 is about 2000 μm and the dimension dw in the Z direction is about 1330 μm, the dimension Ed1 in the X direction of the first measurement electrode 41 is 2500 μm, and the first measurement electrode 41 When the dimension Ew1 in the Z direction was set to about 600 μm, the first sub-vibration, that is, the third-direction thickness-slip inharmonic vibration in the X direction was correctly specified.
For the same size quartz crystal vibrating piece, the second measurement electrode 42 has an X-direction dimension Ed2 of 1000 μm, and the second measurement electrode 42 has a Z-direction dimension Ew2 of about 1500 μm. That is, the Z direction tertiary thickness slip in harmonic vibration was correctly identified.

Further, when the dimension cd in the X direction of the quartz crystal resonator element 10 is about 3600 μm and the dimension dw in the Z direction is about 1600 μm, the dimension Ed1 in the X direction of the first measurement electrode 41 is 4000 μm, and the first measurement electrode 41 When the dimension Ew1 in the Z direction was set to about 800 μm, the first sub-vibration, that is, the third-direction thickness-slip inharmonic vibration in the X direction was correctly specified.
For the same size crystal resonator element, the second measurement electrode 42 has an X-direction dimension Ed2 of 1800 μm, and the second measurement electrode 42 has a Z-direction dimension Ew2 of about 1800 μm. That is, the Z direction tertiary thickness slip in harmonic vibration was correctly identified.

Next, the first electrode 41 and the second electrode 42 are used as the upper electrode 32 of the measuring device 30 in FIG. 12, and the first device in FIG. An embodiment of a barrel processing management method in the case where barrel processing of the crystal vibrating piece 10 is performed by the barrel processing apparatus 20 will be described.
In FIG. 18, the end face processing of the crystal vibrating piece 10 is performed using the first barrel processing apparatus 20 as described above (ST10). That is, as shown in the barrel 25 at the right end of FIG. 8, the quartz crystal vibrating piece 10 and the abrasive 28 are put in each barrel 25 and accommodated in the drum 24. And this drum is arrange | positioned in the exterior drum 21 as FIG. 6 shows (ST11).
Next, when the exterior drum 21 is rotated in the direction of arrow A at a high speed, each drum 24 rotates around the main rotation shaft 22. Further, each drum 24 rotates around each drum shaft 23 as indicated by an arrow B. In this state, the machining is continued for a predetermined time, that is, T1 time (ST12).

Next, in each processing lot unit, the quartz crystal vibrating piece 10 as a workpiece is taken out from the barrel 25 as a sample. The quartz vibrating piece 10 of this sample is subjected to X-direction tertiary thickness-slip inharmonic vibration (first sub-vibration mode). ) And the main vibration, or the frequency difference ΔSZ1 between the Z-direction tertiary thickness-slip inharmonic vibration (second sub-vibration mode) and the main vibration. Alternatively, both the frequency difference ΔSX1 and the frequency difference ΔSZ1 are measured (ST13).
Here, the frequency difference ΔSX1 can be measured by the method described with reference to FIGS. 14 and 15 using the first measurement electrode 41, and the frequency difference ΔSZ1 can be measured using the second measurement electrode 42 in FIGS. It can be measured by the method described in FIG. That is, in the barrel processing management method of the present embodiment, the type of the sub vibration mode can be specified and the frequency difference ΔSX1 and the frequency difference ΔSZ1 can be individually measured.

Next, the barrel machining is continued for a predetermined time T2 (ST14), and the quartz crystal resonator element 10 as a workpiece is taken out from the barrel 25 as a sample for each machining lot unit. 10, either the frequency difference ΔSX2 or the frequency difference ΔSZ2 is measured. Alternatively, both the frequency difference ΔSX2 and the frequency difference ΔSZ2 are measured (ST15).
Subsequently, based on this measurement result, a required time T3 required for the remaining machining is obtained (ST16). The method for obtaining the remaining machining time T3 is shown in FIG. In FIG. 22, when the remaining machining time T3 is determined (ST71), the measurement results of the frequency difference ΔSX2, the frequency difference ΔSX1 and / or the frequency difference ΔSZ2, and the frequency difference ΔSZ1 in ST15 and ST13 are compared. The processing speed VSX or VSZ of barrel processing under the processing work conditions is calculated for each processing lot (ST72).

VSX = (ΔSX2−ΔSX1) / T2 Expression (20)
Then, of the sample frequency difference ΔSX2 and frequency difference ΔSZ2 in ST15, for example, the difference DSX between the sample frequency difference ΔSX2 and ΔSX as a predetermined standard value is calculated by the following equation, for example (ST73).
DSX = ΔSX (standard value) −ΔSX2 (21)
Then, as shown in the following formula (22), the remaining machining time T3 is calculated by dividing the difference DSX by the machining speed VSX (ST74).
T3 = (DSX / VSX) × α (22)

Here, α is a safety factor taking a value of 1 or less.
When determining the remaining machining time T3, the remaining machining time T3 may be obtained based on the difference between the standard value of the frequency difference ΔSZ and the measured value of the frequency difference ΔSZ2 in ST15.

  When the remaining machining time T3 is calculated, the process proceeds to ST17, and the barrel machining is continued for the obtained remaining machining time T3. When processing of the remaining processing time T3 is completed, the quartz crystal vibrating piece 10 as a workpiece is taken out from the barrel 25 as a sample, and either the frequency difference ΔSX3 or the frequency difference ΔSZ3 is measured for the crystal vibrating piece 10 of this sample. . Alternatively, both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are measured (ST18).

In the process of additional processing, there are a case where both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are managed (ST30) and a case where one is managed (ST60).
First, the case where both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are managed (ST30) will be described.
In this case, management is performed according to the flowcharts of FIGS.

  In FIG. 19, in managing both the frequency difference ΔSX3 and the frequency difference ΔSZ3, first, it is determined whether ΔSX3 matches the standard value of ΔSX or is within an allowable range of the standard value (ST31). If ΔSX3 matches the standard value of ΔSX or is within the allowable range of the standard value, it is next determined whether ΔSZ3 matches the standard value of ΔSZ or is within the allowable range of the standard value (ST32). If ΔSZ3 coincides with the standard value of ΔSZ or is within the allowable range of the standard value, the processing ends (ST33).

If it is determined in ST31 that ΔSX3 matches the standard value of ΔSX or is not within the allowable range of the standard value, if ΔSX3 exceeds the upper limit value (ST51), it is determined as a defective product (ST52). Ends.
When it is determined in ST31 that ΔSX3 matches the standard value of ΔSX or is not within the allowable range of the standard value, and ΔSX3 is smaller than the lower limit value (ST53), the remaining processing time T4 for each lot is described in ST74. It is determined by a method or the like (ST54). Then, additional machining is performed at the remaining machining time T4 (ST55). When necessary additional machining is completed, the process returns to ST31, and it is determined again whether ΔSX3 matches the standard value of ΔSX or is within the allowable range of the standard value. To do.

On the other hand, when it is determined in ST32 that ΔSZ3 coincides with the standard value of ΔSZ or is not within the allowable range of the standard value, ΔSZ3 sets the allowable upper limit value for the standard value of ΔSZ. If it exceeds (ST34), the processing is terminated as a defective product (ST35).
In addition, when ΔSZ3 is smaller than the allowable lower limit value with respect to the standard value of ΔSZ (ST36), mainly using the second barrel processing apparatus 50 described in FIG. 9 to FIG. In order to proceed with the end face processing of the crystal vibrating piece in the Z direction, second barrel processing is performed (ST37).

That is, as described with reference to FIG. 10, the abrasive and the quartz crystal vibrating piece 10 are put into the processed body 54 to prepare for processing (ST38), and the remaining processing time T4 is obtained. This remaining machining time T4 is substantially the same as the method for calculating the remaining machining time T3 described above.
Thus, the second barrel processing is performed only for the remaining processing time T4 (ST39), and after processing, the crystal vibration piece after processing is performed on the crystal vibrating piece 10 using the second measurement electrode 42 of the measuring device 30. The piece 10 is extracted and the frequency difference ΔSZ4 is measured (ST41).

  Thereafter, the frequency difference ΔSZ4 of the crystal vibrating piece 10 is compared with the standard value of ΔSZ, and if it is smaller than the lower limit value, the remaining machining time T5 is determined and the second barrel machining is performed (ST42). The processed quartz crystal resonator element 10 is extracted, and the frequency difference ΔSZ5 is measured (ST43). Based on the measurement result of ST43, the remaining processing time T6 for each lot is obtained and additional processing is performed (ST45), the crystal resonator element 10 after additional processing is extracted, and the frequency difference ΔSZ6 is measured (ST46).

Thereafter, it is determined whether or not the frequency difference ΔSZ6 of the quartz crystal vibrating piece 10 matches ΔSZ or is within an allowable range of the standard value (ST47). If the frequency difference ΔSZ6 coincides with ΔSZ or is within the allowable range of the standard value, the processing is terminated (ST47-1).
If a negative result is obtained in ST47 and ΔSZ6 exceeds the allowable upper limit for the standard value of ΔSZ (ST48-1), the processing is terminated as a defective product (ST48). -3). Further, when ΔSZ6 is smaller than the allowable lower limit value with respect to the standard value of ΔSZ (ST48-2), the process returns to ST44 and continues processing.

Next, a case where only one of the frequency difference ΔSX and the frequency difference ΔSZ is managed after additional processing after ST18 in FIG. 18 (ST60) will be described with reference to FIGS.
In this case, it is determined whether one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 measured in ST18 of FIG. 18 matches the standard value of the frequency difference ΔSX or ΔSZ or is within the allowable range of the standard value (ST61). If a positive result is obtained, the barrel processing is terminated (ST69).
If a negative result is obtained in ST61, one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 coincides with the standard value of the frequency difference ΔSX or ΔSZ or is not within the allowable range of the standard value. Then, it is determined whether or not processing is possible (ST62). When the additional processing cannot be performed, it is determined as a defective product (ST62-1).
If it is determined in ST62 that additional processing is possible, a negative result is obtained in comparison with the standard value for either the frequency difference ΔSX or the frequency difference ΔSZ, so the difference from the standard value in this case Ask for.
Next, based on the determination result, as shown in FIG. 21, a required time T4 required for the remaining machining is obtained (ST63). The method for obtaining the remaining machining time T4 is the same as that described with reference to FIG.

Subsequently, additional processing for the calculated T4 time is performed (ST64), the processed crystal vibrating piece 10 is extracted, and the processed frequency differences ΔSX4 and ΔSZ4 are measured, and these are the specifications of the frequency difference ΔSX or ΔSZ. It is determined whether it matches the value or is within the allowable range of the standard value (ST66). If an affirmative result is obtained in ST66, the barrel processing is terminated (ST69).
If a negative result is obtained in ST66, it is determined whether or not further processing is possible (ST67). When the additional processing cannot be performed, it is determined as a defective product (ST62-1).
If it is determined in ST67 that additional machining is possible, the additional machining time is obtained in the same manner as described above, and the necessary additional machining is performed (ST68), and then the barrel machining by the first barrel machining method is terminated.

  Thus, according to the above-described barrel processing management method, as described with reference to FIG. 18, the quartz crystal vibrating piece 10 being processed is extracted, and the frequency difference ΔSX between the main vibration and the first sub vibration is One or both of the frequency difference ΔSZ between the vibration and the second sub-vibration is accurately grasped. As a result, the actual machining speed can be grasped, and the progress of machining according to the type of sub-vibration can be grasped specifically, whereby the machining progress can be inspected. Moreover, in addition to this, the remaining machining time can be accurately predicted, which is advantageous in terms of management.

  In addition, in ST18 of FIG. 18, after the scheduled machining time T3 ends, the frequency difference ΔSX between the main vibration and the first sub vibration and / or the frequency difference ΔSZ between the main vibration and the second sub vibration is obtained. Separately or both can be confirmed in relation to each standard value.

In addition, according to the method of FIG. 19, in the additional machining, both the frequency difference ΔSX and the frequency difference ΔSZ are measured to determine the progress of the machining, so that more precise machining management can be performed and the product quality can be improved. Can contribute.
Alternatively, in the method of FIG. 21, in the additional machining, by measuring one of the frequency difference ΔSX and the frequency difference ΔSZ, it is not troublesome to determine the progress of the machining, and the efficient work is advanced. be able to.

  Further, in the method of FIG. 19 and the method of FIG. 20, it is possible to determine a lot that has been processed too much in the middle of processing, which is wasteful compared to the case of discarding in the end inspection after finishing all the processes. Cost can be greatly reduced.

  The present invention is not limited to the above-described embodiment. For example, various types of barrel processing apparatuses can be used in addition to those described in the embodiment. In addition, each configuration of each embodiment can be appropriately combined or omitted, and can be combined with other configurations not shown.

1 is a schematic perspective view showing a crystal resonator element to which a processing management method according to an embodiment of the present invention is applied. FIG. 2 is a schematic plan view of the crystal vibrating piece in FIG. 1. Schematic explanatory drawing which shows the area | region which concerns on the 1st sub-vibration of the quartz-crystal vibrating piece of FIG. Schematic explanatory drawing which shows the area | region which concerns on the 2nd sub vibration of the crystal vibrating piece of FIG. Explanatory drawing which shows how to control the frequency of a spurious vibration in the temperature characteristic figure of a main vibration and a spurious vibration. The schematic sectional drawing which shows the structure of the 1st barrel processing apparatus for performing the end surface processing of a crystal vibrating piece. The longitudinal cross-sectional view which shows a part of barrel processing apparatus of FIG. The schematic perspective view which shows the barrel single-piece | unit with which the barrel processing apparatus of FIG. 7 is equipped. The schematic sectional drawing which shows the structure of the 2nd barrel processing apparatus for performing the end surface processing of a crystal vibrating piece. FIG. 10 is a schematic perspective view showing a cylindrical processed body incorporated in the second barrel processing apparatus of FIG. 9. It is explanatory drawing which shows a mode that the quartz crystal vibrating piece 10 is processed within a process body. The schematic block diagram which shows an example of the space | gap type frequency measuring device as an example of a means which measures the sub vibration mode of a crystal vibrating piece. It is a figure which shows the relationship between a crystal vibrating piece and the measurement electrode which measures the sub vibration, (a) is a top view of the state in which the quartz crystal vibrating piece is excited in the vibration mode of the main vibration, and (b) FIG. 4C is a top view of a state in which the crystal vibrating piece is excited in a first sub-vibration vibration mode, and FIG. 5C is a top view of a state in which the crystal vibrating piece is excited in a second sub-vibration vibration mode. It is a figure which shows the relationship between the quartz crystal vibrating piece and the 1st measurement electrode which measures the secondary vibration, (a) is a 1st secondary vibration mode (X direction tertiary thickness slip in harmonic vibration). FIG. 6B is a top view of the state in which the quartz crystal vibrating piece is excited in the second sub-vibration mode (Z-direction tertiary thickness-slip in harmonic vibration). The figure which shows the frequency characteristic of the 1st sub vibration measured by the method of Fig.14 (a). It is a figure which shows the relationship between the 2nd measuring electrode which measures a quartz crystal vibrating piece, and its secondary vibration, (a) is a 1st secondary vibration mode (X direction tertiary thickness slip in harmonic vibration). FIG. 6B is a top view of the state in which the quartz crystal vibrating piece is excited in the second sub-vibration mode (Z-direction tertiary thickness-slip in harmonic vibration). The figure which shows the frequency characteristic of the 2nd sub vibration measured by the method of FIG.16 (b). The flowchart which shows an example of the management method of barrel processing in the case of performing barrel processing of a crystal vibrating piece. In the method of managing the barrel processing of the crystal vibrating piece, a method of managing both the frequency difference ΔSX between the main vibration and the first sub vibration and the frequency difference ΔSZ between the main vibration and the second sub vibration during the additional processing. The flowchart which shows. In the method of managing the barrel processing of the crystal vibrating piece, a method of managing both the frequency difference ΔSX between the main vibration and the first sub vibration and the frequency difference ΔSZ between the main vibration and the second sub vibration during the additional processing. The flowchart which shows. A method of managing one of a frequency difference ΔSX between the main vibration and the first sub-vibration and a frequency difference ΔSZ between the main vibration and the second sub-vibration during the additional processing in the barrel processing management method of the crystal vibrating piece. The flowchart shown. The flowchart which shows an example of the method of calculating | requiring the process remaining time T3 in the management method of FIG. The schematic perspective view which shows an example of the conventional quartz crystal vibrating piece. FIG. 24 is a frequency characteristic diagram showing main vibration and sub vibration of the crystal vibrating piece in FIG. 23. FIG. 24 is a schematic plan view showing a region related to main vibration of the crystal vibrating piece in FIG. 23. FIG. 24 is a schematic plan view showing a region related to sub-vibration of the crystal vibrating piece in FIG. 23. FIG. 24 is a frequency characteristic diagram showing main vibration and sub vibration of the crystal vibrating piece in FIG. 23. The schematic plan view which shows the area | region which is concerned in the main vibration after end surface processing in the quartz crystal vibrating piece of FIG. FIG. 24 is a schematic plan view showing a region related to sub-vibration after end face processing in the crystal vibrating piece of FIG. 23. FIG. 24 is a frequency characteristic diagram showing main vibration and sub vibration after end face processing in the quartz crystal vibrating piece of FIG. 23. The schematic perspective view which shows an example of the recent quartz crystal vibrating piece. FIG. 32 is a schematic plan view showing a region involved in vibration in the first sub-vibration mode of the crystal vibrating piece in FIG. 31. FIG. 32 is a schematic plan view showing a region involved in vibration in the second sub vibration mode of the crystal vibrating piece in FIG. 31. FIG. 34 is a frequency characteristic diagram showing main vibration and each sub-vibration mode in FIGS. 32 and 33;

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Crystal vibrating piece, 11 ... Short side, 12 ... Long side, 20 ... Barrel processing apparatus, 21 ... Exterior drum, 24 ... Drum, 25 ... Barrel, 41 ... 1st measurement electrode, 42 ... 2nd measurement electrode, NA ... Area related to main vibration, XNA1, XNA2, XNA3 ... Area related to 1st sub vibration, ZNA1, ZNA2, ZNA3... Region involved in second sub vibration

Claims (1)

In the processing control method for barrel processing of almost rectangular quartz crystal vibrating pieces,
The quartz crystal vibrating piece and the abrasive are put into a barrel processing apparatus and processed for a predetermined time (T1 time),
Next, the quartz crystal resonator element is taken out in units of each processing lot, and the frequency difference ΔSX1 between the main vibration and the first sub vibration and / or the frequency difference ΔSZ1 between the main vibration and the second sub vibration is measured. Make measurements,
Thereafter, barrel processing is further performed for a predetermined time (T2 time), and then the quartz crystal vibrating piece is taken out in units of each processing lot, and the frequency difference ΔSX2 between the main vibration and the first sub vibration and / or the main vibration and the first vibration is obtained. The second measurement is performed to measure the frequency difference ΔSZ2 with the secondary vibration of 2.
Based on the measurement results of the first measurement and the second measurement, the remaining machining time T3 is calculated for each machining lot,
Perform barrel processing for this remaining processing time T3,
After processing by the remaining processing time T3, the quartz crystal resonator element is taken out in units of each processing lot, and the frequency difference ΔSX3 between the main vibration and the first sub vibration and the frequency difference ΔSZ3 between the main vibration and the second sub vibration. Is measured and compared with each standard value of the frequency difference ΔSX and the frequency difference ΔSZ,
Processing control of a crystal vibrating piece, characterized in that barrel processing is terminated when a comparison value of the frequency difference ΔSX3 and the frequency difference ΔSZ3 of the crystal vibrating piece is larger than an upper limit value in an allowable range of the standard value. Method.

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