JP2004104831A - Method and apparatus for measuring sub-vibration of crystal resonator, and method for managing machining of crystal resonator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring sub-vibration for distinguishing a plurality of sub-vibration modes of a crystal resonator, and to provide a method for managing a machining of the crystal resonator by using a barrel machining on the basis of the result measured by the apparatus. <P>SOLUTION: The apparatus is provided with a plurality of electrodes 41 and 42 located in accordance with a specific vibration domain of a crystal resonator 10 and a means for measuring a frequency corresponding to the plurality of sub-vibration modes of the crystal resonator 10 via the measuring electrodes, such that a kind of the sub-vibration mode which is observed with a predetermined frequency difference from main vibration of the crystal vibrator is specified. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention is to process a sub-vibration and a main vibration so as to have an appropriate frequency difference by barrel-processing a crystal resonator element used for a crystal device such as a crystal resonator or a crystal oscillator. And a method of managing the processing.

In a small information device such as an HDD (hard disk drive), a mobile computer, or an IC card, or a mobile communication device such as a mobile phone, a car phone, or a paging system, a large number of crystal oscillators and the like are used. Crystal devices are used. As a crystal vibrating piece used in such a crystal device, an AT-cut crystal piece obtained by AT-cutting a crystal wafer having a predetermined crystal structure is often used.
FIG. 23 shows an example of such a crystal resonator element.
As shown in FIG. 23, the quartz vibrating reed 1 appropriately determines a dimension d in the length direction X, a dimension w in the width direction Z, and a dimension t in the thickness direction Y, and mainly sets a CI (crystal impedance) value. In order to adjust, the corners of the end faces in the X direction and / or the Y direction have been ground or polished (hereinafter referred to as “end face processing”) and have been subjected to convex processing.

The polishing operation in this case is a very delicate operation, and the amount of polishing affects not only the CI characteristics but also the electrical characteristics such as spurious characteristics. Is being considered.
For example, according to Japanese Patent No. 2864242 (JP-A-63-15510) (see Patent Document 1), the side ratio d / w of the length d and the width w of the quartz vibrating reed 1 is set to 3.52 to 5.40. As disclosed in FIG. 24, there is disclosed a method of performing surface processing such that the frequency difference Δf between the main vibration f0 and the sub-vibration fs of the crystal resonator element 1 has a predetermined relationship.

In this method, as shown in FIG. 24, the problem is a frequency difference Δf between the main vibration f0 and the closest sub-vibration fs. As long as the sub-vibration fs closest to the main vibration f0 is targeted, the experimental result shows that the frequency difference Δf at which the CI value of the main vibration f0 becomes the smallest becomes exponentially smaller as the frequency of the main vibration becomes higher. , A predetermined relational expression is derived, and an appropriate frequency difference Δf is derived.
That is, the sub-vibration fs which is a problem in Patent Document 1 is a thickness-shear inharmonic vibration generated with respect to the main vibration f0, and is the sub-vibration closest to the main vibration f0.

Japanese Patent No. 2864242

However, as described in Patent Document 1, such a method targets at least the sub-vibration fs closest to the main vibration f0 of the quartz-crystal vibrating piece 1 having a specific side ratio d / w. This method is effective only when controlling the frequency difference Δf, and it is difficult to employ a crystal resonator element that does not meet such conditions.
Further, in Patent Document 1, the relational expression is derived from the end face processing of the crystal resonator element and the frequency difference Δf, and the energy of the main vibration can be confined to an appropriate amount based on the relational expression. Is good. And, in the description of the specification, although there is a reference that the end face processing has an effect on spurious characteristics, it is clearly described by what specific means to improve the spurious characteristics. Not. This is because the machining amount at which the CI value becomes the smallest is not always good in spurious characteristics. This is because the method based on the above-mentioned relational expression used in the invention described in Patent Document 1 reduces the spurious characteristics. You can't always be good.

To explain this point, the principle of the technique disclosed in Patent Document 1 will be described first.
Although not necessarily clarified in the description of the specification of Patent Literature 1, the present inventor discloses that the main vibration f0 of the crystal vibrating reed 1 and the sub-vibration fs and the frequency difference Δf thereof and the end face processing are different. According to such considerations, the following relationships are considered.
FIGS. 25 and 26 are plan views of the quartz-crystal vibrating reed 1. In FIG. 25, the area of the quartz-crystal vibrating reed 1 where the main vibration f0 vibrates is indicated by A1. In this case, with respect to the main vibration f0, the vibrating region extends over a relatively wide range in the central portion of the crystal resonator element 1.
In FIG. 26, regions where the sub-vibration fs is vibrating are indicated by A2 to A4 in the crystal vibrating reed 1. In this case, with respect to the sub-vibration fs, the vibrating regions are A2, A3, and A4 arranged along the X direction of the crystal resonator element 1.
In the quartz-crystal vibrating reed 1, vibrations having different vibration regions are observed as a main vibration f0 and a sub-vibration fs, as shown in FIG. Therefore, this auxiliary vibration is a third-order thickness-shear inharmonic vibration in the X direction.

Next, FIG. 28 and FIG. 29 show, as described in the above-mentioned prior application, the end face processing of the quartz vibrating reed 1 at both ends in the X direction, and the change when polishing is advanced. It is a figure for explaining.
When the end face processing is advanced and the polishing amount is increased, as shown in FIG. 28, the area involved in the main vibration is confined in a narrower area in the center of the crystal vibrating piece 1 as shown by CA1. Along with this, as shown in FIG. 30, the main vibration Cf0 changes so that its frequency gradually increases, as indicated by the arrow.
Similarly, when the end face processing of the quartz-crystal vibrating reed 1 is advanced to increase the polishing amount, as shown in FIG. 29, the regions related to the sub-vibration are indicated by CA2, CA3, and CA4. The three vibration regions arranged along the X direction are narrowed. Accordingly, as shown in FIG. 30, the sub-vibration Cfs changes so that its frequency becomes gradually higher as shown by the arrow.

It is considered that such a process is performed in the end face processing in the above-mentioned prior invention, and what is important here is that the frequency change of the main vibration, which changes as the end face processing advances, and the frequency change of the auxiliary vibration are the same. It is not a point. For this reason, the frequency difference CΔf is gradually increased by subjecting the quartz-crystal vibrating piece 1 to end face processing and increasing the polishing amount. Thus, in the invention of the prior application, the frequency difference Δf between the main vibration f0 and the sub vibration fs is changed, and the frequency difference Δf to be controlled is the frequency difference between the main vibration f0 and the closest sub vibration fs. Only.

On the other hand, as shown in FIG. 31, the quartz vibrating reed 5 that has become the mainstream in recent years differs from the quartz vibrating reed 1 of FIG. 20 in that the side ratio Cd / Cw of the length Cd and the width Cw is 1.2. Or about 3, which is significantly different from the above-mentioned side ratio of 3.52 to 5.40 of the invention of the prior application.
That is, in the quartz vibrating reed 5, the ratio of the size in the width direction is larger than that of the quartz vibrating reed 1. For this reason, the method disclosed in Patent Document 1 cannot be applied as it is.

Specifically, in the case of the quartz-crystal vibrating piece 5, it is considered that different modes of sub-vibration are generated as shown in the plan views of FIGS.
In other words, the sub-vibration in FIG. 32 is a third-order thickness-shear inharmonic vibration in the X-direction caused by the three regions XA1, XA2, XA3 of the crystal vibrating piece 5 arranged in the X-direction participating in the vibration ( Hereinafter, "X direction auxiliary vibration" or "first auxiliary vibration mode").
The sub-vibration in FIG. 33 is a third-order thickness-shear inharmonic vibration in the Z-direction caused by three regions ZA1, ZA2, and ZA3 of the quartz-crystal vibrating piece 5 arranged in the Z-direction participating in the vibration ( Hereinafter, "Z direction auxiliary vibration" or "second auxiliary vibration mode").

For this reason, as shown in FIG. 34, in the case of the quartz-crystal vibrating piece 5, two types of sub-vibrations fs1 and fs2 are observed in addition to the main vibration f0.
For this reason, even if the end face processing is advanced in order to control the frequency difference Δf between the main vibration f0 and the sub-vibration fs1 closest to the main vibration f0, another sub-vibration fs2 exists, and as described above, depending on the progress of the end face processing. Since these cause a frequency change at a different rate from each other, appropriate control of Δf cannot be performed.
Further, from the observation result of FIG. 34, there is a problem that it is not possible to distinguish which of the sub-vibrations fs1 and fs2 is the X-direction sub-vibration and the Z-direction sub-vibration.
Actually, the above-described tertiary thickness-slip inharmonic vibration in the X and Z directions also occurs in the quartz vibrating reed 1 having a side ratio of 3.52 to 5.40, which was a problem in the prior application. However, in the size of the quartz-crystal vibrating reed 1, the third-order thickness-shear inharmonic vibration in the X direction occurs at a relatively small frequency as compared with the frequency of the third-order thickness-shear inharmonic vibration in the Z direction. Since the sub-vibration closest to the vibration f0 is always the third-order thickness-shear inharmonic vibration in the X direction, the method of the invention of the prior application targeting the sub-vibration closest to the main vibration f0 is effective.
However, when the side ratio Cd / Cw is about 1.2 to 3 as in the case of the quartz-crystal vibrating piece 5, the frequency at which the third-order thickness-shear inharmonic vibrations in the X direction and the Z direction approach each other is reduced. Therefore, depending on other conditions and the like, the frequency of each tertiary thickness shear inharmonic vibration in the Z direction may be lower than the frequency of each tertiary thickness shear inharmonic vibration in the X direction. It is necessary to distinguish between the X-direction auxiliary vibration and the Z-direction auxiliary vibration.

  An object of the present invention is to solve the above-mentioned problem, and an object of the present invention is to provide a processing management method for processing a quartz crystal resonator element by barrel processing.

According to a first aspect of the present invention, in the processing management method for barrel processing a substantially rectangular crystal resonator element, the crystal resonator element and the abrasive are charged into a barrel processing apparatus for a predetermined time (T1 hour). ) Processing, and then taking out the crystal vibrating piece in each processing lot unit and measuring the frequency difference ΔSX1 between the main vibration and the first sub-vibration and / or the frequency difference ΔSZ1 between the main vibration and the second sub-vibration After performing the first measurement, and then performing the barrel processing for a further fixed time (T2 time), the crystal vibrating piece is taken out for each processing lot, and the frequency difference between the main vibration and the first sub vibration is obtained. A second measurement for measuring ΔSX2 and / or a frequency difference ΔSZ2 between the main vibration and the second sub-vibration is performed, and based on the measurement results of the first measurement and the second measurement, a remaining amount is determined for each processing lot. Calculate the processing time T3 This according to the remaining processing time T3, performs the barrel finishing, the machining management method of the quartz crystal resonator element is achieved.

According to the configuration of the first aspect of the invention, when the quartz vibrating piece is barrel-processed, the quartz vibrating piece being processed is extracted for each processing lot, and the frequency difference ΔSX between the main vibration and the first sub-vibration is calculated. One or both of the frequency difference ΔSZ between the main vibration and the second sub-vibration is accurately grasped. Thereby, the actual processing speed can be grasped, and the progress of the machining according to the type of the sub-vibration can be grasped concretely. Thus, it is possible to inspect the progress of the processing. Moreover, in addition to this, the remaining processing time can be accurately predicted, which is advantageous in management.

According to a second aspect of the present invention, in the configuration of the first aspect, after the processing by the remaining processing time T3, the crystal vibrating piece is taken out for each processing lot and a frequency difference ΔSX3 between the main vibration and the first auxiliary vibration. And / or measuring the frequency difference ΔSZ3 between the main vibration and the second sub-vibration, and comparing the measured values with the standard values of the frequency difference ΔSX and / or the frequency difference ΔSZ.
According to the configuration of the second invention, after the scheduled processing time is completed, the frequency difference ΔSX between the main vibration and the first auxiliary vibration and / or the frequency difference ΔSZ between the main vibration and the second auxiliary vibration. Can be confirmed separately or both in relation to each standard value.

According to a third aspect of the present invention, in the configuration of the second aspect, the frequency difference ΔSX3 and / or the frequency difference ΔSZ3 of the crystal vibrating reed after the comparison with the standard value of the frequency difference ΔSX and / or the frequency difference ΔSZ. In the additional processing performed when the comparison value is out of the allowable range of the standard value, a change in both the frequency difference ΔSX3 and the frequency difference ΔSZ3 is managed.
According to the configuration of the third aspect of the invention, in the additional processing, since the progress of the processing is determined by measuring both the frequency difference ΔSX3 and the frequency difference ΔSZ3, it is possible to perform more precise processing management and improve the product quality. Can be contributed to.

In a fourth aspect based on the configuration of the second aspect, the frequency difference ΔSX3 and / or the frequency difference ΔSZ3 and / or the frequency difference ΔSZ3 and / or the frequency difference ΔSZ3 of the quartz-crystal vibrating piece are provided after the comparison with the respective standard values. In the additional processing performed when the comparison value is outside the allowable range of the standard value, one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 is managed.
According to the configuration of the fourth aspect of the present invention, in the additional machining, by measuring one of the frequency difference ΔSX3 and the frequency difference ΔSZ3, it is not necessary to determine the progress of the machining, and the work is performed efficiently. be able to.

According to a fifth aspect of the present invention, in the configuration of the third aspect, if the comparison value between the frequency difference ΔSX3 and the frequency difference ΔSZ3 of the quartz-crystal vibrating piece is larger than an upper limit value in the allowable range of the standard value, barrel processing is performed. The process is terminated.
According to the configuration of the fifth aspect, it is possible to judge a lot that has been excessively processed in the middle of the processing, so that wasteful cost is greatly reduced as compared with a case where the lot is discarded in an end inspection after all processes are completed. Can be reduced.
According to a sixth aspect of the present invention, in the configuration of the fourth aspect, any one of the frequency difference ΔSX3 of the crystal vibrating piece or the frequency difference ΔSX4 of the crystal vibrating piece after the additional processing, or the frequency difference ΔSZ3 or the additional processing thereof When any of the comparison values of ΔSZ4 is larger than the upper limit value in the allowable range of the standard value, the barrel processing is terminated.
According to the configuration of the sixth aspect, in this case as well, it is possible to judge a lot that has been excessively processed in the middle of processing. Wasted costs can be significantly reduced.

FIG. 1 is a schematic perspective view of a crystal resonator element to which a processing management method according to an embodiment of the present invention is applied.
The quartz-crystal vibrating reed 10 of FIG. 1 is basically the same as the quartz-crystal vibrating reed described with reference to FIG. 31, and in particular, the side ratio Cd / Cw of the length Cd and the width Cw is 1.2 or more. About three. An electrode is formed on the surface of such a quartz-crystal vibrating piece 10 with a predetermined conductive metal.
In this embodiment, the length Cd of the quartz-crystal vibrating piece 10 is, for example, about 3600 μm, and the width Cw is, for example, about 1600 μm.

The so-called convex processing is performed on the end portion of the quartz vibrating piece 10 in the X direction, which is the longitudinal direction, that is, on the end surface of the side 11 by polishing the corner portion serving as the ridge line. As shown in (1), the area NA involved in the main vibration of the crystal vibrating piece 10 is set as a place avoiding the peripheral area of the crystal vibrating piece 10.
This also means that, as shown in FIG. 2, a region involved in the main vibration, that is, a region NA vibrating at the time of the main vibration is avoided from the corners 11a at the longitudinal ends. Will do. The corners 11a, 11a are formed by using a conductive adhesive or the like with respect to the electrodes in the package when the crystal resonator element 10 is mounted in a package to form, for example, a crystal resonator. It corresponds to the place to be fixed. Therefore, by avoiding such a fixed portion from the region related to the main vibration, it is possible to suppress an increase in the CI value in the main vibration.
It is needless to say that not only the short sides 11 and 11 but also the long sides 12 and 12 may be processed.

FIG. 3 and FIG. 4 show vibration regions related to two different types of sub-vibration modes in the crystal vibrating reed 10, and the sub-vibration in FIG. 3 is along the X direction (longitudinal direction) of the crystal vibrating reed 10. This is a third-order thickness-slip inharmonic vibration in the X-direction caused by the three divided regions XNA1, XNA2, and XNA3 participating in vibration (hereinafter, "X-direction sub-vibration" or "first sub-vibration mode"). "). In this case, when XNA2 has a positive charge, XNA1, XNA3 have a negative charge distribution.
4 is a tertiary thickness in the Z direction caused by the three divided regions ZNA1, ZNA2, and ZNA3 along the Z direction (width direction) of the quartz vibrating piece 10 participating in the vibration. This is slip-in-harmonic vibration (hereinafter, referred to as “Z-direction auxiliary vibration” or “second auxiliary vibration mode”). In this case, when ZNA2 has a positive charge, ZNA1, ZNA3 have a negative charge distribution.
These secondary vibrations are the same as those described with reference to FIGS. 32 and 33. Therefore, the result of measuring the frequency of these secondary vibrations is the same as the frequency characteristic shown in FIG.

Here, the present inventors have found that the first and second auxiliary vibration modes of these different types and the amount of end face machining have the following relationship.
Here, the dimension of the piezoelectric vibrating piece in the X direction is X0, the dimension in the Z direction is Z0 (X0 and Z0 are effective dimensions effective for vibration), and the thickness dimension is t, and f0 is an infinite flat plate. When the resonance frequency is used, C11, C55, and C66 are elastic constants, p is the charge distribution order in the X direction, r is the charge distribution order in the Z direction, and n is the overtone order, an AT-cut crystal resonator (crystal) The thickness-shear resonance frequency f of the resonator element is expressed by the following equation (Equation (1)) ("Quartz crystal frequency control device" published by Techno Co., Ltd., written by Shotaro Okano).

(Resonance frequency) f = n × f0 × [1+ {C11 / (2 × C66)}
× {(p × t) / (n × X0)} ² + {C55 / (2 × C66)}
× {(r × t) / (n × Z0)} ² ] (1) Here, since the target vibration mode is a primary vibration, n = 1, and the value of each elastic constant is When you put it in,
f = f0 × [1 + 1.461 × {(p × t) / X0} ² + 1.145 × {(r × t) / Z0} ² ] (2)

Then, since the X-direction tertiary thickness shear inharmonic vibration is p = 3, r = 1, and the Z-direction tertiary thickness shear inharmonic vibration is p = 1, r = 3, these are substituted.
That is, the third thickness shear in-harmonic vibration fx3 in the X direction is
fx3 = f0 × {1 + 1.461 × (9 × t ² ) / X0 ² + 1.145 × t ² / Z0 ² } (3) The third thickness slip in-harmonic vibration fz3 in the Z direction is
fz3 = f0 × {1 + 1.461 × t 2 / X0 2 + 1.145 × (9 × t 2) / Z0 2} ····· (4) equation addition, primary vibration f is, p = 1, r = Because it becomes 1,
f = f0 × {1 + 1.461 × t 2 / X0 2 + 1.145 × t 2 / Z0 2}
・ ・ ・ ・ ・ (5)

Therefore, the frequency difference ΔSX between the X-direction tertiary thickness-slip inharmonic vibration (first sub-vibration mode) and the main vibration, and the frequency difference ΔSX between the Z-direction tertiary thickness-slip inharmonic vibration (second sub-vibration mode) and the main vibration Assuming the frequency difference ΔSZ,
ΔSX = f0 × 1.461 × (8 × t 2) / X0 2 ······· (6) formula ΔSZ = f0 × 1.145 × (8 × t 2) / Z0 2 ····· Equation (7) Here, the thickness of the crystal vibrating piece, which is t, is also a variable compared to X0 and Z0. However, the processing method of the present embodiment hardly changes, and for example, the dimension in the X direction While the dimension X0 in the X0 and Z directions changes from several hundred μm to several thousand μm by processing, the thickness t is not processed to about several μm. Therefore, the change in the thickness t by CV processing is the dimension X0 in the X direction and the Z direction. The thickness t can be regarded as a constant since it is sufficiently small and negligible as compared with the change in the dimension Z0. Therefore,
ΔSX = A / X0 ² ... (8) Expression ΔSZ = B / Z0 ² ... (9) Here, A and B are respectively A = f0 × 1.461 × (8 × t ² ) (10) B = f0 × 1.145 × (8 × t ² ) ··· Expression (11)

Thus, from equation (8), it can be seen that ΔSX has a correlation with the effective dimension in the X direction, and from equation (9), ΔSZ has a correlation with the effective dimension in the Z direction. Note that ΔSX is fs1 in FIG. 34, and ΔSZ is fs2 in FIG. The method according to the present embodiment is based on the inventors' investigation of the correlation between the first sub-vibration mode ΔSX and the second sub-vibration mode ΔSZ with the effective dimension in the X direction and the effective dimension in the Z direction, respectively. Thus, two sub-vibration modes corresponding to the X direction and the Y direction are determined, and an appropriate end face machining amount is determined based on the determination.

That is, the graph of FIG. 5 shows the temperature characteristic of the resonance frequency of the crystal resonator element 10, and the resonance frequency of the crystal resonator element 10 changes as shown in the graph of FIG. . The straight line L in FIG. 5 shows spurious vibration. When the spurious vibration approaches the main vibration which is the resonance frequency in a specific temperature environment as shown in the drawing, the main vibration and the spurious vibration resonate, and the operation is started. Causes failure. Therefore, the type of the spurious vibration mode of the straight line L is correctly determined, and the direction of the end face processing in the X direction or the Z direction is determined accordingly, and the processing is performed correctly, thereby indicating the direction shown by the arrow in FIG. Thus, the spurious vibration does not affect the main vibration.

Next, a processing apparatus for processing the end face of the crystal resonator element 10 will be described.
FIG. 6 is a schematic cross-sectional view showing a configuration of a first barrel processing device for performing end face processing, FIG. 7 is a vertical cross-sectional view showing a part of the first barrel processing device in FIG. 6, and FIG. FIG. 2 shows a single barrel provided in the first barrel processing apparatus, where (a) is a schematic perspective view and (b) is a schematic longitudinal sectional view thereof. In FIG. 6, the first barrel processing device 20 has an exterior drum 21 having a main rotation shaft 22, and the exterior drum 21 rotates in the direction of arrow A about the main rotation shaft 22. ing.

A plurality of drums 24 are housed in the housing section of the exterior drum 21. In this case, a plurality of drums 24, for example, four drums 24 are arranged around the main rotation shaft 22 of the exterior drum 21 at equal distances.
Each drum 24 rotates in the direction of arrow B while being held by the exterior drum 21. As shown in FIG. 7, each drum 24 is a cylinder that is slightly longer in one direction, has a space inside, and accommodates a plurality of barrels 25.
The drum shaft 23 of the drum 24 is fixed to have an inclination of, for example, about 14 degrees with respect to the length direction of the drum main body. For this reason, when the drum 24 is housed in the outer drum 21 of FIG. 6, the drum shaft 23 is positioned in parallel with the main rotation shaft 22 of the outer drum 21 so that the drum 24 , Held in an inclined state.

バ The barrel 25 accommodated in each drum 24 is held by a cylindrical body as shown in FIG. As shown in FIG. 8, the inside of the barrel 25 has a spherical curved surface 26 for mainly polishing and a flat surface 27 not to mainly contribute to polishing. The inside of the barrel 25 accommodates the quartz vibrating reed 10 which is a work for polishing as end face processing and an abrasive 28, so that a polishing operation is performed.

Next, a method of processing an end face using the first barrel processing apparatus 20 will be schematically described.
First, as shown in the rightmost barrel 25 in FIG. 8B, the quartz vibrating reed 10 and the abrasive 28 are put in each barrel 25 and stored in the drum 24. Then, as shown in FIG. 6, the drum is arranged in the exterior drum 21. Next, when the outer drum 21 is rotated at a high speed in the direction of the arrow A, each drum 24 rotates around the main rotation shaft 22. Further, the respective drums 24 are rotated around the respective drum shafts 23 as indicated by arrows B.

Thus, in each barrel 25, the quartz vibrating piece 10 and the abrasive 28 are pressed against the inner surface of the barrel 25 by the action of centrifugal force. In this case, the quartz vibrating reed 10 is chamfered by polishing the corners, which are eight ridge lines, with the abrasive 28 in accordance with the curvature of the spherical curved surface 26 of the barrel 25. In addition, by reversing the rotation direction of the exterior drum 21, the surface of the crystal resonator element 10 to be polished is reversed, and uniform polishing is performed. In addition, since each barrel 25 is supported at an angle, the quartz vibrating piece 10 is easily inverted inside, and more uniform end face processing can be performed.

In the first barrel processing device 20, since the inner surface of the barrel 25 is a concave spherical curved surface 26, the short sides 11 and 11 and the long sides 12 and 12 (see FIG. 1) of the crystal vibrating piece 10 are processed. Since the ratio is constant, the processing ratio of the short sides 11, 11 in the longitudinal direction (X direction) increases based on the rectangular shape of the quartz vibrating piece 10.

9 to 11 show a second barrel processing apparatus 50.
FIG. 9 is a schematic cross-sectional view showing a configuration of a second barrel processing device for performing end face processing, and FIG. 10 is a schematic perspective view showing a cylindrical processed body incorporated in the second barrel processing device of FIG. FIG. 11 is an explanatory view showing a state in which the quartz-crystal vibrating piece 10 is processed in the processing body.
In FIG. 9, the second barrel processing device 50 has an exterior drum 51 provided with a rotation shaft 52, and the exterior drum 51 rotates in the direction of arrow A about the rotation shaft 52. .

A plurality of processed bodies 54 are housed inside the exterior drum 51. In this case, a plurality of, for example, four workpieces 54 are arranged inside the exterior drum 51 at equal distances around the rotation shaft 52. Each of the workpieces 54 is configured to rotate in the direction of arrow B while being accommodated in the exterior drum 51.

加工 As shown in FIG. 10, the processed body 54 is formed of a cylinder that is slightly longer in one direction. The quartz vibrating reed 10 and an abrasive (not shown) are introduced into the cylindrical processing body 54 through an opening, and the opening is closed. It is to be processed.

As shown in FIG. 11, the inner surface 54a of the processed body 54 is a concave curved surface of a cylindrical body, and the inner surface 54a is a processed surface. The inner surface 54a has a directionality unlike the spherical curved surface 26 of the barrel 25 of the first barrel processing device 20.
For this reason, the quartz-crystal vibrating reed 10 put into the processed body 54 is stabilized in the posture shown in the upper part of FIG. 11 with its curved surface along the inner surface 54a of the processed body 54. For this reason, when the quartz-crystal vibrating piece 10 relatively rotates in the processing body 54, the Z direction is easily chamfered. In other words, the quartz vibrating reed 10 is processed in the processing body 54 so that the longer sides 12, 12 are larger than the shorter sides 11, 11.
In this way, the end faces of the crystal vibrating piece 10 in the X direction and the Z direction can be selectively processed by appropriately using the first barrel processing apparatus 20 and the second barrel processing apparatus 50. is there.

FIG. 12 shows a gap-type frequency measurement device (hereinafter referred to as a “measurement device”) for measuring a sub-vibration mode of the crystal vibrating piece 10 as a sub-vibration measuring device used in the processing management method according to the embodiment of the present invention. (Abbreviated) is shown.
In the figure, the measuring device 30 includes an oscillator 31 and an upper electrode 32 and a lower electrode 33 as a pair of electrodes connected to the oscillator 31.

In the measuring device 30, the quartz resonator blank 10 is arranged on the lower electrode 33, and the resonance frequency thereof can be measured. Moreover, in this apparatus, the resonance frequency of the quartz-crystal vibrating piece 10 can be measured in a blank state before the electrodes are formed.
That is, the crystal resonator element 10 is arranged on the lower electrode 33, and the upper electrode 32 is arranged with a slight gap. Then, by applying a drive voltage between the upper electrode 32 and the lower electrode 33, the crystal resonator element 10 can be excited and its resonance frequency can be measured.

FIG. 13 shows the upper electrode 32 and the state of the crystal vibrating reed 10 positioned below the upper electrode 32 when viewed through the upper electrode 32. In FIG. 1 to 4, but the ratio of the long side to the short side is not shown accurately in the drawing.
FIG. 13A is a top view illustrating a state in which the crystal vibrating piece 10 is excited in the main vibration mode. FIG. 13B is a view illustrating the crystal vibrating piece 10 being excited in the first auxiliary vibration mode. FIG. 13C is a top view of a state in which the quartz vibrating reed 10 is excited in the vibration mode of the second auxiliary vibration.

The upper electrode (hereinafter referred to as “measurement electrode”) 32 shown in FIG. 13 is a conventionally used one, and is formed in a circular shape having a relatively large diameter with respect to the size of the quartz vibrating piece 10. . Thereby, it is possible to have a size that covers the entire crystal resonator element 10.
However, when such a measurement electrode 32 is used, as described with reference to FIG. 34, not only the main vibration f0 but also the two sub-vibration modes fs1 and fs2 are measured. It is not possible to distinguish which sub-vibration mode.
This means that, as already described, the different sub-vibration modes cannot distinguish the difference in the charge distribution on the surface of the quartz-crystal vibrating reed 10 that is related to the vibration of the quartz-crystal vibrating reed 10 by the measurement electrode 32. It is due to

There, two different types of measuring electrodes are prepared to distinguish the types of the sub-vibration modes.
FIG. 14 shows a first measurement electrode. FIG. 14A shows a state in which the quartz-crystal vibrating piece 10 is excited in a first sub-vibration mode (X-direction third-order thickness-shear inharmonic vibration). FIG. 14B is a top view illustrating a state in which the quartz-crystal vibrating piece 10 is excited in the second auxiliary vibration mode (Z-direction third-order thickness-shear inharmonic vibration).

In FIG. 14A, the first measurement electrode 41 is entirely formed of, for example, brass or the like as a conductive metal material, and its shape is an elongated rectangular parallelepiped or a circular shape. Is a rectangle having. The first measurement electrode 41 measures a first sub-vibration mode (X-direction third-order thickness-shear inharmonic vibration) having a plurality of vibration regions divided by different charges along the longitudinal direction of the crystal blank. Therefore, as shown in FIG. 14A, the dimension AL in the X direction of the vibration regions XA1, XA2, and XA3 when the crystal vibrating piece 10 vibrates in the first sub vibration mode. It has a dimension Ed1 in the X direction larger than that. Further, as shown in FIG. 14B, the first measurement electrode 41 is provided in the vibration directions ZA1, ZA2, and ZA3 in the Z direction when the crystal vibrating piece 10 vibrates in the second auxiliary vibration mode. It has a dimension Ew1 in the Z direction smaller than the dimension AW.

At least the first measurement electrode 41 has a dimension Ed1 in the X direction that is at least 0.8 times the dimension cd in the X direction of the quartz-crystal vibrating piece 10, and a dimension Ew1 in the Z direction of the first measurement electrode. Is 0.3 to 0.7 times the dimension dw of the crystal resonator element 10 in the Z direction.
Thus, when the first measurement electrode 41 is used, as shown in FIG. 15, only one sub-vibration fs1 is measured in addition to the main vibration f0.

Here, in the sub-vibration fs1 of FIG. 15, the first measurement electrode 41 covers the vibration region of the crystal vibrating piece 10 in the first sub-vibration as shown in FIG. Accordingly, the first auxiliary vibration, that is, the third thickness in-direction in-harmonic vibration in the X direction is specified.
On the other hand, in the first measurement electrode 41, as shown in FIG. 14B, the vibration regions ZA1, ZA2, and ZA3 when the crystal vibrating piece 10 vibrates in the second auxiliary vibration mode. Of these, with respect to the two regions ZA1 and ZA3, only about half the area is covered, and the amount of all the electric charges generated in these two regions cannot be covered. No tertiary thickness shear inharmonic vibration in the Z direction is measured.

As described above, the first electrode 41 measures only the respective frequencies of the main vibration f0 and the first sub-vibration fs of the crystal vibrating piece 10, and prevents the measurement of the frequencies of the other sub-vibrations. .
Here, when the dimension Ed1 in the X direction of the first measurement electrode 41 is smaller than 0.8 times the dimension cd in the X direction of the quartz-crystal vibrating piece 10, it is difficult to observe the main vibration and the sub-vibration in the X direction. There are evils. When the dimension Ew1 of the first measurement electrode 41 in the Z direction is smaller than 0.3 times the dimension dw of the quartz vibrating piece 10 in the Z direction, the main vibration and the sub-vibration in the X direction are hardly observed. If the dimension dw of the quartz vibrating piece 10 exceeds 0.7 times the dimension dw in the Z direction, there is an adverse effect that the Z-direction sub-vibration is observed simultaneously with the X-direction sub-vibration.

FIG. 16 shows a second measurement electrode. FIG. 16A shows a state in which the quartz-crystal vibrating piece 10 is excited in the first auxiliary vibration mode (X-direction third-order thickness-shear inharmonic vibration). FIG. 16B is a top view illustrating a state in which the quartz-crystal vibrating piece 10 is excited in the second auxiliary vibration mode (Z-direction third-order thickness-shear inharmonic vibration).

In FIG. 16A, the second measurement electrode 42 is formed of, for example, the same material as the above-described first measurement electrode 41, and has an elongated rectangular parallelepiped or a circular shape, and has an appropriate end. It is a rectangle having various dimensions. The second measurement electrode 42 measures a second sub-vibration mode (third thickness shear in-harmonic vibration in the Z direction) having a plurality of vibration regions divided by different charges along the width direction of the crystal resonator element. Therefore, as shown in FIG. 16A, the dimensions in the X direction of the vibration regions XA1, XA2, and XA3 when the crystal vibrating piece 10 vibrates in the first sub vibration mode. It has a dimension Ed2 in the X direction smaller than AL. Further, as shown in FIG. 16B, the second measurement electrode 42 is provided in the vibration directions ZA1, ZA2, and ZA3 in the Z direction when the crystal vibrating piece 10 vibrates in the second auxiliary vibration mode. It has a dimension Ew2 in the Z direction larger than the dimension AW.

At least the second measurement electrode 42 has a dimension Ed2 in the X direction that is 0.3 to 0.7 times the dimension Cd in the X direction of the quartz-crystal vibrating piece 10 and a second measurement electrode 42. The dimension Ew2 of the electrode 42 in the Z direction is set to be 0.8 times or more the dimension dw of the quartz vibrating piece 10 in the Z direction.
Thus, using the second measurement electrode 42, as shown in FIG. 17, only one sub-vibration fs2 is measured in addition to the main vibration f0.

Here, as shown in FIG. 16B, the sub-vibration fs2 in FIG. 17 is such that the second measurement electrode 42 covers the vibration region in the Z direction of the crystal vibrating piece 10 in the second sub-vibration. Therefore, the second auxiliary vibration, that is, the third thickness shear in-harmonic vibration in the Z direction is specified.
On the other hand, in the second measurement electrode 42, as shown in FIG. 16A, the vibration regions XA1, XA2, and XA3 when the crystal vibrating piece 10 vibrates in the first auxiliary vibration mode. Of these, the two regions XA1 and XA3 cover only about half the area, and cannot cover all the charges generated in these two regions. X-direction tertiary thickness shear inharmonic vibration is not measured.
As described above, the second electrode 42 measures only the respective frequencies of the main vibration f0 and the second sub-vibration fs of the crystal vibrating piece 10, and prevents the measurement of the frequencies of the other sub-vibrations. . Only the second sub-vibration of the crystal vibrating piece 10 can be measured.

Here, when the dimension Ed2 in the X direction of the second measurement electrode 42 is smaller than 0.3 times the dimension Cd in the X direction of the crystal resonator element 10, the main vibration and the sub-vibration in the Z direction are hardly observed, If it exceeds 0.7 times the dimension Cd of the crystal resonator element in the X direction, there is a problem that the sub-vibration in the X direction is observed simultaneously with the sub-vibration in the Z direction. If the dimension Ew2 of the second measurement electrode 42 in the Z direction is smaller than 0.8 times the dimension Aw of the quartz vibrating piece 10 in the Z direction, the main vibration and the sub-vibration in the Z direction are not easily observed. There is.

When the dimension cd in the X direction of the quartz vibrating piece 10 is about 2000 μm and the dimension dw in the Z direction is about 1330 μm, the dimension Ed1 in the X direction of the first measurement electrode 41 is 2500 μm, and the first measurement electrode 41 With the dimension Ew1 in the Z direction of about 600 μm, the first sub-vibration, that is, the third thickness shear in-harmonic vibration in the X direction was correctly specified.
Further, with respect to a quartz vibrating piece of the same size, the dimension Ed2 of the second measurement electrode 42 in the X direction is set to about 1000 μm, and the dimension Ew2 of the second measurement electrode 42 in the Z direction is set to about 1500 μm. That is, the Z-direction tertiary thickness shear inharmonic vibration was correctly specified.

Further, when the dimension cd in the X direction of the quartz vibrating piece 10 is about 3600 μm and the dimension dw in the Z direction is about 1600 μm, the dimension Ed1 in the X direction of the first measurement electrode 41 is 4000 μm, and the first measurement electrode 41 With the dimension Ew1 in the Z direction of about 800 μm, the first auxiliary vibration, that is, the third thickness shear in-harmonic vibration in the X direction was correctly specified.
Further, with respect to a quartz-crystal vibrating piece of the same size, the dimension Ed2 of the second measurement electrode 42 in the X direction is 1800 μm, and the dimension Ew2 of the second measurement electrode 42 in the Z direction is about 1800 μm. That is, the Z-direction tertiary thickness shear inharmonic vibration was correctly specified.

Next, such a first electrode 41 and a second electrode 42 are used as the upper electrode 32 of the measuring device 30 in FIG. 12, and the first electrode 41 in FIG. An embodiment of a method for managing barrel processing when barrel processing of the crystal vibrating piece 10 is performed by the barrel processing apparatus 20 will be described.
In FIG. 18, the end face processing of the quartz vibrating piece 10 is performed using the first barrel processing apparatus 20 as described above (ST10). That is, as shown in the barrel 25 at the right end in FIG. 8, the quartz vibrating reed 10 and the abrasive 28 are put in each barrel 25 and stored in the drum 24. Then, as shown in FIG. 6, the drum is arranged in the exterior drum 21 (ST11).
Next, when the outer drum 21 is rotated at a high speed in the direction of the arrow A, each drum 24 rotates around the main rotation shaft 22. Further, the respective drums 24 are rotated around the respective drum shafts 23 as indicated by arrows B. In this state, processing is continued for a predetermined time, that is, T1 time (ST12).

Next, a crystal vibrating piece 10 as a work is taken out of the barrel 25 as a sample for each processing lot, and the crystal vibrating piece 10 of this sample is subjected to the X-direction third-order thickness-shear inharmonic vibration (first sub vibration mode). ) And the main vibration, and one of the frequency difference ΔSZ1 between the Z-direction tertiary thickness shear inharmonic vibration (second sub vibration mode) and the main vibration. Alternatively, both frequency difference ΔSX1 and frequency difference ΔSZ1 are measured (ST13).
Here, the frequency difference ΔSX1 can be measured by the method described with reference to FIGS. 14 and 15 using the first measurement electrode 41, and the frequency difference ΔSZ1 can be measured using the second measurement electrode 42 in FIGS. 17 can be measured. That is, in the barrel processing management method of the present embodiment, the type of the sub-vibration mode can be specified, and the frequency difference ΔSX1 and the frequency difference ΔSZ1 can be individually measured.

Next, the barrel processing is continued for a predetermined time T2 (ST14), and a crystal vibrating piece 10 as a work is taken out of the barrel 25 as a sample for each processing lot, and the crystal vibrating piece of this sample is taken out. For 10, one of the frequency difference ΔSX2 and the frequency difference ΔSZ2 is measured. Alternatively, both frequency difference ΔSX2 and frequency difference ΔSZ2 are measured (ST15).
Next, based on the measurement result, a required time T3 required for the remaining processing is obtained (ST16). How to determine the remaining processing time T3 is shown in FIG. In FIG. 22, when the operation for determining the remaining machining time T3 is started (ST71), the measurement results of the frequency difference ΔSX2, the frequency difference ΔSX1, and / or the frequency difference ΔSZ2, and the frequency difference ΔSZ1 between ST15 and ST13 are compared. The processing speed VSX or VSZ of the barrel processing under the processing conditions is calculated for each processing lot (ST72).

VSX = (ΔSX2-ΔSX1) / T2 Expression (20)
Then, of the sample frequency difference ΔSX2 and the frequency difference ΔSZ2 in ST15, for example, the difference DSX between the sample frequency difference ΔSX2 and ΔSX as a predetermined standard value is calculated by the following equation (ST73).
DSX = ΔSX (standard value) −ΔSX2 (21)
Then, as shown in the following equation (22), the remaining processing time T3 is calculated by dividing this difference DSX by the processing speed VSX (ST74).
T3 = (DSX / VSX) × α (22)

Here, α is a safety factor having a value of 1 or less.
Then, when obtaining the remaining processing time T3, the remaining processing time T3 may be obtained based on the difference between the standard value of the frequency difference ΔSZ and the measured value of the frequency difference ΔSZ2 in ST15.

After calculating the remaining processing time T3, the process proceeds to ST17, and the barrel processing is continued for the obtained remaining processing time T3. When the processing for the remaining processing time T3 is completed, the crystal vibrating piece 10 as a work is taken out of the barrel 25 as a sample, and one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 is measured for the crystal vibrating piece 10 of this sample. . Alternatively, both frequency difference ΔSX3 and frequency difference ΔSZ3 are measured (ST18).

In the additional processing step, there are a case where both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are managed (ST30) and a case where one of them is managed (ST60).
First, a case where both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are managed (ST30) will be described.
In this case, the management is performed according to the flowcharts of FIGS.

In FIG. 19, in managing both the frequency difference ΔSX3 and the frequency difference ΔSZ3, first, it is determined whether ΔSX3 matches the standard value of ΔSX or is within the allowable range of the standard value (ST31). If ΔSX3 matches the standard value of ΔSX or falls within the allowable range of the standard value, it is next determined whether ΔSZ3 matches the standard value of ΔSZ or falls within the allowable range of the standard value (ST32). If ΔSZ3 matches the standard value of ΔSZ or is within the allowable range of the standard value, the processing ends (ST33).

If it is determined in ST31 that ΔSX3 does not match the standard value of ΔSX or is not within the allowable range of the standard value, if ΔSX3 exceeds the upper limit (ST51), it is determined that the product is defective (ST52). Ends.
In ST31, when it is determined that ΔSX3 is equal to the standard value of ΔSX or not within the allowable range of the standard value, when ΔSX3 is smaller than the lower limit (ST53), the remaining processing time T4 for each lot is described in ST74. It is determined and determined by a method or the like (ST54). Then, additional processing is performed in the remaining processing time T4 (ST55). When necessary additional processing is completed, the process returns to ST31, and it is determined again whether ΔSX3 matches the standard value of ΔSX or is within the allowable range of the standard value. I do.

On the other hand, in ST32, when it is determined that ΔSZ3 matches the standard value of ΔSZ or is not within the allowable range of the standard value, ΔSZ3 sets the allowable upper limit value for the standard value of ΔSZ. If it exceeds (ST34), the processing is terminated as a defective product (ST35).
When ΔSZ3 is smaller than the allowable lower limit of the standard value of ΔSZ (ST36), the second barrel processing device 50 described with reference to FIGS. In order to advance the end face processing in the Z direction of the crystal resonator element, a second barrel processing is performed (ST37).

That is, as described with reference to FIG. 10, the abrasive and the quartz vibrating piece 10 are put into the processing body 54 to prepare for processing (ST38), and the remaining processing time T4 is obtained. The remaining processing time T4 is substantially the same as the above-described method of calculating the remaining processing time T3.
As a result, the second barrel processing is performed for the remaining processing time T4 (ST39), and after the processing, the processed crystal vibration is applied to the crystal vibrating piece 10 using the second measurement electrode 42 of the measuring device 30. The piece 10 is extracted, and the frequency difference ΔSZ4 is measured (ST41).

(4) After that, the frequency difference ΔSZ4 of the crystal vibrating piece 10 is compared with the standard value of ΔSZ, and if it is smaller than the lower limit value, the remaining processing time T5 is determined and the second barrel processing is performed (ST42). The processed crystal vibrating piece 10 is extracted, and the frequency difference ΔSZ5 is measured (ST43). Based on the measurement result of ST43, additional processing is performed by obtaining the remaining processing time T6 for each lot (ST45), the crystal resonator element 10 after the additional processing is extracted, and the frequency difference ΔSZ6 is measured (ST46).

Thereafter, it is determined whether or not the frequency difference ΔSZ6 of the quartz-crystal vibrating piece 10 is equal to ΔSZ or is within an allowable range of a standard value (ST47). If the frequency difference ΔSZ6 is equal to ΔSZ or is within the allowable range of the standard value, the processing ends (ST47-1).
If a negative result is obtained in ST47 and ΔSZ6 exceeds the allowable upper limit value with respect to the standard value of ΔSZ (ST48-1), the processing is terminated as a defective product (ST48). -3). If ΔSZ6 is smaller than the allowable lower limit of the standard value of ΔSZ (ST48-2), the process returns to ST44 to continue the processing.

Next, a case where only one of the frequency difference ΔSX and the frequency difference ΔSZ is managed (ST60) when performing additional processing after ST18 in FIG. 18 will be described with reference to FIGS. 18 and 21.
In this case, it is determined whether one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 measured in ST18 of FIG. 18 matches the standard value of the frequency difference ΔSX or ΔSZ or is within an allowable range of the standard value (ST61). If a positive result is obtained, the barrel processing ends (ST69).
If a negative result is obtained in ST61, one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 does not match the standard value of the frequency difference ΔSX or ΔSZ or is not within the allowable range of the standard value. It is determined whether processing is possible (ST62). If additional processing cannot be performed, it is determined to be defective (ST62-1).
If it is determined in ST62 that the additional processing can be performed, it means that a negative result is obtained by comparing the frequency difference ΔSX or the frequency difference ΔSZ with the standard value, and the difference from the standard value in this case is obtained. Ask for.
Next, based on the result of this determination, as shown in FIG. 21, a required time T4 required for the remaining processing is obtained (ST63). The method of obtaining the remaining processing time T4 is the same as that described with reference to FIG.

Subsequently, additional processing for the calculated T4 time is performed (ST64), the processed crystal vibrating piece 10 is extracted, and the processed frequency differences ΔSX4, ΔSZ4 are measured, and these are the standard of the frequency difference ΔSX or ΔSZ. It is determined whether the value matches or is within the allowable range of the standard value (ST66). If a positive result is obtained in ST66, the barrel processing ends (ST69).
If a negative result is obtained in ST66, it is determined whether further processing is possible (ST67). If additional processing cannot be performed, it is determined to be defective (ST62-1).
If it is determined in ST67 that the additional processing is possible, the necessary additional processing is performed in the same manner as described above, with the additional processing time required (ST68), and then the barrel processing by the first barrel processing method is ended.

As described above, according to the above-described barrel processing management method, as described with reference to FIG. 18, the crystal vibrating piece 10 being processed is extracted, and the frequency difference ΔSX between the main vibration and the first sub-vibration is calculated. One or both of the frequency difference ΔSZ between the vibration and the second auxiliary vibration is accurately grasped. As a result, the actual processing speed can be ascertained, and the progress of the processing according to the type of the sub-vibration can be specifically ascertained, whereby the progress of the processing can be inspected. Moreover, in addition to this, the remaining processing time can be accurately predicted, which is advantageous in management.

Moreover, in ST18 of FIG. 18, after the scheduled processing time T3 ends, the frequency difference ΔSX between the main vibration and the first sub-vibration and / or the frequency difference ΔSZ between the main vibration and the second sub-vibration. , Separately, or both, can be confirmed in relation to each standard value.

In addition, according to the method of FIG. 19, in the additional processing, the progress of the processing is determined by measuring both the frequency difference ΔSX and the frequency difference ΔSZ, so that more precise processing management can be performed and the product quality can be improved. Can be contributed to.
Alternatively, in the method of FIG. 21, in the additional machining, one of the frequency difference ΔSX and the frequency difference ΔSZ is measured, so that in order to determine the progress of the machining, no trouble is required and the efficient work is performed. be able to.

Further, in the method of FIG. 19 and the method of FIG. 20, it is possible to judge a lot that has been excessively processed in the middle of the processing. Cost can be significantly reduced.

  The invention is not limited to the embodiments described above. For example, as the barrel processing device, various types can be used in addition to those described in the embodiment. In addition, each configuration of each embodiment can be appropriately combined or omitted, and can be combined with another configuration (not shown).

FIG. 1 is a schematic perspective view showing a crystal resonator element to which a processing management method according to an embodiment of the present invention is applied. FIG. 2 is a schematic plan view of the crystal resonator element of FIG. 1. FIG. 2 is a schematic explanatory view showing a region of the quartz-crystal vibrating piece of FIG. FIG. 2 is a schematic explanatory view showing a region related to a second sub-vibration of the crystal resonator element of FIG. 1. FIG. 9 is an explanatory diagram showing how to control the frequency of spurious vibration in the temperature characteristic diagram of main vibration and spurious vibration. FIG. 2 is a schematic cross-sectional view showing a configuration of a first barrel processing device for performing an end face processing of a crystal resonator element. FIG. 7 is a longitudinal sectional view showing a part of the barrel processing device of FIG. 6. FIG. 8 is a schematic perspective view showing a single barrel provided in the barrel processing apparatus of FIG. 7. FIG. 4 is a schematic cross-sectional view showing a configuration of a second barrel processing device for processing an end face of a crystal resonator element. FIG. 10 is a schematic perspective view showing a cylindrical processed body incorporated in the second barrel processing device of FIG. 9. It is explanatory drawing which shows a mode that the quartz-crystal vibrating piece 10 is processed in a processed body. The schematic block diagram which shows an example of the air gap type frequency measuring device as an example of the means which measures the sub-vibration mode of a quartz-crystal vibrating piece. It is a figure which shows the relationship between a quartz-crystal vibrating piece and the measurement electrode which measures the sub-vibration, (a) is a top view in the state where the quartz-crystal vibrating piece is excited in the vibration mode of a main vibration, (b) FIG. 4C is a top view illustrating a state in which the crystal vibrating piece is excited in the vibration mode of the first auxiliary vibration, and FIG. 7C is a top view illustrating a state in which the crystal vibrating piece is excited in the vibration mode of the second auxiliary vibration. It is a figure which shows the relationship between a quartz-crystal vibrating reed and the 1st measurement electrode which measures the sub-vibration, and (a) is a 1st sub-vibration mode (X direction 3rd thickness shear inharmonic vibration) of a quartz-crystal vibrating reed. (B) is a top view of a state in which the crystal vibrating piece is excited in the second auxiliary vibration mode (Z-direction third-order thickness-shear inharmonic vibration). FIG. 15 is a diagram illustrating a frequency characteristic of the first auxiliary vibration measured by the method of FIG. It is a figure which shows the relationship between a quartz-crystal vibrating reed and the 2nd measurement electrode which measures the sub-vibration, and (a) is a 1st sub-vibration mode (X direction 3rd thickness shear inharmonic vibration). (B) is a top view of a state in which the crystal vibrating piece is excited in the second auxiliary vibration mode (Z-direction third-order thickness-shear inharmonic vibration). FIG. 17 is a diagram illustrating a frequency characteristic of the second auxiliary vibration measured by the method of FIG. The flowchart which shows an example of the management method of the barrel processing when performing the barrel processing of a quartz-crystal vibrating piece. In the method of managing the barrel processing of a quartz vibrating piece, a method of managing both the frequency difference ΔSX between the main vibration and the first sub-vibration and the frequency difference ΔSZ between the main vibration and the second sub-vibration at the time of additional processing. 5 is a flowchart showing the process. In the method of managing the barrel processing of a quartz vibrating piece, a method of managing both the frequency difference ΔSX between the main vibration and the first sub-vibration and the frequency difference ΔSZ between the main vibration and the second sub-vibration at the time of additional processing. 5 is a flowchart showing the process. In the method of managing the barrel processing of the crystal vibrating piece, a method of managing one of a frequency difference ΔSX between the main vibration and the first sub-vibration and a frequency difference ΔSZ between the main vibration and the second sub-vibration at the time of additional processing. The flowchart shown. 19 is a flowchart illustrating an example of a method for obtaining a remaining processing time T3 in the management method of FIG. 18. The schematic perspective view which shows an example of the conventional quartz-crystal vibrating piece. FIG. 24 is a frequency characteristic diagram illustrating main vibration and sub-vibration of the crystal vibrating piece of FIG. 23. FIG. 24 is a schematic plan view showing a region related to the main vibration of the crystal resonator element of FIG. 23. FIG. 24 is a schematic plan view showing a region related to the sub-vibration of the crystal resonator element of FIG. 23. FIG. 24 is a frequency characteristic diagram illustrating main vibration and sub-vibration of the crystal vibrating piece of FIG. 23. FIG. 24 is a schematic plan view showing a region involved in main vibration after end face processing in the crystal resonator element of FIG. 23. FIG. 24 is a schematic plan view showing a region involved in sub-vibration after end face processing in the crystal resonator element of FIG. 23. FIG. 24 is a frequency characteristic diagram showing main vibration and sub-vibration after the end face processing in the crystal vibrating piece of FIG. FIG. 2 is a schematic perspective view showing an example of a recent quartz-crystal vibrating piece. FIG. 32 is a schematic plan view showing a region involved in vibration in the first sub-vibration mode of the crystal vibrating piece of FIG. 31. FIG. 32 is a schematic plan view showing a region involved in vibration in the second sub-vibration mode of the crystal vibrating piece of FIG. 31. FIG. 34 is a frequency characteristic diagram showing the main vibration and each sub-vibration mode in FIGS. 32 and 33.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 10 ... Crystal vibrating piece, 11 ... Short side, 12 ... Long side, 20 ... Barrel processing apparatus, 21 ... External drum, 24 ... Drum, 25 ... Barrel, 41 ... first measurement electrode, 42 ... second measurement electrode, NA ... regions involved in main vibration, XNA1, XNA2, XNA3 ... regions involved in first auxiliary vibration, ZNA1, ZNA2, ZNA3 ... Area involved in the second auxiliary vibration

Claims (6)

In the processing management method of barrel processing a substantially rectangular crystal vibrating piece,
The quartz vibrating reed and the abrasive are charged into a barrel processing device and processed for a certain time (T1 time).
Next, the crystal vibrating piece is taken out for each processing lot, and a frequency difference ΔSX1 between the main vibration and the first sub-vibration and / or a frequency difference ΔSZ1 between the main vibration and the second sub-vibration are measured. Make a measurement,
Thereafter, after further performing barrel processing for a certain period of time (T2 time), the crystal vibrating piece is taken out for each processing lot, and the frequency difference ΔSX2 between the main vibration and the first auxiliary vibration and / or the main vibration A second measurement for measuring the frequency difference ΔSZ2 from the secondary vibration of No. 2 is performed,
Based on the measurement results of the first measurement and the second measurement, the remaining processing time T3 is calculated for each processing lot,
A method for managing the processing of a quartz vibrating reed, wherein barrel processing is performed according to the remaining processing time T3. After processing by the remaining processing time T3, the crystal vibrating piece is taken out for each processing lot, and the frequency difference ΔSX3 between the main vibration and the first sub-vibration and / or the frequency between the main vibration and the second sub-vibration 2. The method according to claim 1, wherein the difference ΔSZ <b> 3 is measured and compared with each standard value of the frequency difference ΔSX and / or the frequency difference ΔSZ. 3. After the comparison with each standard value of the frequency difference ΔSX and / or the frequency difference ΔSZ, the comparison value of the frequency difference ΔSX3 and / or the frequency difference ΔSZ3 of the crystal vibrating piece was out of the allowable range of the standard value. In the additional processing performed in the case,
3. The method according to claim 2, wherein changes in both the frequency difference ΔSX3 and the frequency difference ΔSZ3 are managed. 4. After the comparison with each standard value of the frequency difference ΔSX and / or the frequency difference ΔSZ, the comparison value of the frequency difference ΔSX3 and / or the frequency difference ΔSZ3 of the crystal vibrating piece was out of the allowable range of the standard value. In the additional processing performed in the case,
3. The method according to claim 2, wherein a change in one of the frequency difference ΔSX3 and the frequency difference ΔSZ3 is managed. The barrel processing is terminated when the comparison value of the frequency difference ΔSX3 and the frequency difference ΔSZ3 of the crystal vibrating piece is larger than an upper limit value in the allowable range of the standard value. Processing management method of crystal vibrating piece. Any one of the frequency difference ΔSX3 of the crystal vibrating piece or the frequency difference ΔSX4 of the crystal vibrating piece after the additional processing, or the comparison value of the frequency difference ΔSZ3 or ΔSZ4 after the additional processing is the standard value. The method according to claim 4, wherein the barrel processing is terminated when the value is larger than an upper limit value in the allowable range.

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