JP3946659B2

JP3946659B2 - High heat dissipation plastic package and manufacturing method thereof

Info

Publication number: JP3946659B2
Application number: JP2003109491A
Authority: JP
Inventors: 重尚苫米地; 明弘浜野
Original assignee: Sumitomo Metal SMI Electronics Device Inc
Current assignee: Sumitomo Metal SMI Electronics Device Inc
Priority date: 2003-04-14
Filing date: 2003-04-14
Publication date: 2007-07-18
Anticipated expiration: 2023-04-14
Also published as: JP2004319644A

Description

【０００１】
【発明が属する技術分野】
本発明は、半導体素子搭載用の高放熱型プラスチックパッケージ及びその製造方法に関し、より詳細には、樹脂基板と放熱板を貼り合わせて形成する高放熱型プラスチックパッケージ及びその製造方法に関する。
【０００２】
【従来の技術】
近年の半導体素子の高性能化、小型化にともない、半導体素子を搭載するためのプラスチックパッケージは、半導体素子からの発熱量の増大、外部と接続するための端子の多端子化、半導体素子の実装性、低コスト化、低インピーダンス化等の観点から、高放熱構造を有するＢＧＡ（ＢａｌｌＧｒｉｄＡｒｒａｙ）タイプ等の高放熱型プラスチックパッケージが多く用いられている。この高放熱型プラスチックパッケージは、片面又は両面にＣｕ箔を接合して形成した導体層を備えたＢＴ樹脂（ビスマイレイミドトリアジンを主成分にした樹脂）やポリイミド樹脂等からなる１層又は多層の高耐熱性の樹脂基板に熱伝導率の高いＣｕ等の金属板からなる放熱板をプリプレグ等の接着材を介して接合したものである（例えば、特許文献１、特許文献２参照）。
【０００３】
図７（Ａ）〜（Ｄ）を参照して、従来の高放熱型プラスチックパッケージ５０の製造方法を説明する。図７（Ａ）に示すように、Ｃｕ箔５２が接合されているガラスクロスを含有する樹脂基板５１には、表、裏面の導通を取るためにスルーホール５３用の貫通孔５３ａを穿設し、表、裏面及び貫通孔５３ａの壁面に無電解Ｃｕめっき被膜を設け、更に、この無電解Ｃｕめっき被膜に通電して電解Ｃｕめっき被膜を設けてＣｕめっき被膜５４を形成している。次に、図７（Ｂ）に示すように、このＣｕめっき被膜５４上にドライフィルムを貼着し、パターンマスクを当接して露光、現像するフォトリソグラフィ法でエッチングレジストパターンを形成し、エッチングレジストパターンの開口部から露出するＣｕめっき被膜５４及びＣｕ箔５２をエッチングで除去し、ドライフィルムを剥離除去して配線パターン５５を形成している。次に、図７（Ｃ）に示すように、配線パターン５５が形成された樹脂基板５１に半導体素子を搭載するためのキャビティ部を形成するために、ルーター加工機を用いて平面視して実質的に矩形状からなる切り欠き５６を形成する。次に、図７（Ｄ）に示すように、樹脂基板５１とＣｕ板等からなる放熱板５７をプリプレグ等の接着材５８を介して加熱圧着して接合し、高放熱型プラスチックパッケージ５０を作製している。なお、樹脂基板５１の上面側には、通常、必要な部分の配線パターン５５が開口部から露出するソルダーレジスト膜５９が形成されている。
【０００４】
放熱性が良好なＢＧＡ型のパッケージには、放熱性の良好な補強板にＴＡＢ（ＴａｐｅＡｕｔｏｍａｔｅｄＢｏｎｄｉｎｇ）テープを熱硬化性接着材で接合するパッケージが提案されている（例えば、特許文献３参照）。
【０００５】
【特許文献１】
特開平７−３２１２５０号公報（第１−１４頁、第１図）
【特許文献２】
特開平１０−３０８４６７号公報（第１−５頁、第２図）
【特許文献３】
特開２００１−６８５１２号公報（第１−６頁、第１図）
【０００６】
【発明が解決しようとする課題】
しかしながら、前述したような従来の高放熱型プラスチックパッケージ及びその製造方法には、次のような問題がある。
（１）導体配線パターン形成用基材と放熱板は、後付けされる接着材が用いられて接合されているので、接着材部分の厚さによって接合された後の全体の厚さが厚くなり、軽薄短小化が求められている、例えば、携帯電話やパソコン等の電子機器への利用の妨げとなっている。
（２）導体配線パターン形成用基材と放熱板の接合に後付の接着材が用いられる場合には、樹脂基板、又は放熱板に接着材を精度よく塗布したり、あるいは接着シートを精度よく貼着したりするのに、時間、工数、及び材料費を必要とし、高放熱型プラスチックパッケージのコストアップとなっている。また、接着材や、接着シートを用いて接合する場合には、接合時に接着用樹脂のキャビティ部への染みだしが発生し、キャビティ部に半導体素子を実装する時の信頼性の低下となっている。
本発明は、このような事情に鑑みてなされたものであって、樹脂基板と放熱板の間にプリプレグ等の厚さの厚い接着材を用いることなく、接着材の樹脂染みだしが少なく、安価で、接合精度がよく、厚さの薄い高放熱型プラスチックパッケージ及びその製造方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
前記目的に沿う本発明に係る高放熱型プラスチックパッケージは、Ｃｕ箔に接着用樹脂が接合されて形成され、平面視して実質的中央部に半導体素子を載置させるためのキャビティ部用の切り欠きが穿設されて有するＣｕ箔付き樹脂フィルムと、半導体素子からの発熱を放熱するための放熱板が、接着用樹脂で直接接合される高放熱型プラスチックパッケージであって、放熱板にはＣｕ箔付き樹脂フィルムの接着用樹脂の接合時の樹脂染みだしを防止するための制止部を有する。これにより、導体配線パターン形成用基材であるＣｕ箔付き樹脂フィルムと放熱板の接合にプリプレグ等の後付けの接着材を用いていないので、パッケージの厚さが薄く、安価であり、Ｃｕ箔付き樹脂フィルムと放熱板の接合精度のよい高放熱型プラスチックパッケージが提供できる。また、接着用樹脂の接合時のキャビティ部への樹脂染みだしを防止できるので、半導体素子の実装信頼性を向上することができる高放熱型プラスチックパッケージが提供できる。
【０００８】
ここで、高放熱型プラスチックパッケージは、制止部が切り欠きに若干のクリアランスを有して装着できる段差からなるのがよい。これにより、キャビティ部を凸状に突出するように形成できる段差部分で接着用樹脂のキャビティ部への樹脂染みだしを防止できるので、半導体素子の実装信頼性を向上することができる高放熱型プラスチックパッケージが提供できる。
【０００９】
また、高放熱型プラスチックパッケージは、制止部が切り欠きの周縁に沿って形成される溝からなるのがよい。これにより、溝部分で接着用樹脂のキャビティ部への樹脂染みだしを防止できるので、半導体素子の実装信頼性を向上することができる高放熱型プラスチックパッケージが提供できる。
【００１０】
前記目的に沿う本発明に係る高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔に接着用樹脂を接合し、平面視して実質的中央部に半導体素子を載置させるためのキャビティ部用の切り欠きを穿設して形成するＣｕ箔付き樹脂フィルムと、半導体素子からの発熱を放熱するための放熱板を、接着用樹脂で直接接合して形成する高放熱型プラスチックパッケージの製造方法であって、放熱板にはＣｕ箔付き樹脂フィルムの切り欠きの周縁に沿うように段差又は溝を形成する工程と、接着用樹脂を加熱してＣｕ箔付き樹脂フィルムと放熱板を接合すると共に、接着用樹脂の樹脂染みだしを段差又は溝で制止させる工程を有する。これにより、Ｃｕ箔付き樹脂フィルムの接着用樹脂で放熱板と容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に接着用樹脂の樹脂染みだしの発生を段差又は溝部分で防止できるので、半導体素子の接合信頼性を高くして実装でき、半導体素子からの発熱を効率よく放熱できる高放熱型プラスチックパッケージの製造方法を提供できる。
【００１１】
また、前記目的に沿う本発明に係る他の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔に接着用樹脂を接合し、平面視して実質的中央部に半導体素子を載置させるためのキャビティ部用の切り欠きを穿設して形成するＣｕ箔付き樹脂フィルムと、半導体素子からの発熱を放熱するための放熱板を、接着用樹脂で直接接合して形成する高放熱型プラスチックパッケージの製造方法であって、Ｃｕ箔付き樹脂フィルムの切り欠きに嵌合できる凸部を有する押さえ治具を用いて低融点樹脂フィルムを介する離型フィルムをキャビティ部及びＣｕ箔付き樹脂フィルム上に押し付ける工程と、接着用樹脂を加熱してＣｕ箔付き樹脂フィルムと放熱板を接合すると共に、接着用樹脂の樹脂染みだしを低融点樹脂フィルムを介する離型フィルムで制止させる工程と、押さえ治具を除去すると共に、低融点樹脂フィルムを介する離型フィルムを除去する工程を有する。これにより、Ｃｕ箔付き樹脂フィルムの接着用樹脂で放熱板と容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に接着用樹脂の樹脂染みだしの発生を押さえ治具で押し付けられた低融点樹脂フィルムを介する離型フィルムで防止できるので、半導体素子の接合信頼性を高くして実装でき、半導体素子からの発熱を効率よく放熱できる高放熱型プラスチックパッケージの製造方法を提供できる。
【００１２】
【発明の実施の形態】
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態について説明し、本発明の理解に供する。
ここに、図１（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの斜視図、縦断面図、図２（Ａ）〜（Ｃ）はそれぞれ同変形例の高放熱型プラスチックパッケージの上面側斜視図、下面側斜視図、縦断面図、図３（Ａ）、（Ｂ）はそれぞれ同高放熱型プラスチックパッケージ及び変形例の高放熱型プラスチックパッケージの放熱板の制止部の説明図、図４（Ａ）〜（Ｅ）はそれぞれ同高放熱型プラスチックパッケージの製造方法の説明図、図５（Ａ）〜（Ｅ）はそれぞれ同変形例の高放熱型プラスチックパッケージの製造方法の説明図、図６（Ａ）〜（Ｄ）はそれぞれ同高放熱型プラスチックパッケージ及び変形例の高放熱型プラスチックパッケージの他の製造方法の説明図である。
【００１３】
図１（Ａ）、（Ｂ）に示すように、本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０は、Ｃｕ箔付き樹脂フィルム１１と放熱板１２で構成されている。Ｃｕ箔付き樹脂フィルム１１は、Ｃｕ箔に、ガラスクロス基材を含まない接着用樹脂１３を塗布してフィルム状に形成されている。このＣｕ箔付き樹脂フィルム１１には、平面視してパッケージの実質的中央部に半導体素子を搭載させるためのキャビティ部１４用の切り欠き１５が打ち抜きプレス等で穿孔して設けられている。一方、放熱板１２は、半導体素子からの発熱を効率よく放熱させることができるように熱伝導率の良いＣｕ板等からなり、接着用樹脂１３との接合強度を向上させるために表面に表面粗化が施されている。また、この放熱板１２には、Ｃｕ箔付き樹脂フィルム１１に接合して形成されている接着用樹脂１３との接合時にキャビティ部１４に発生する樹脂染みだしを防止するための制止部が設けられている。そして、Ｃｕ箔付き樹脂フィルム１１と放熱板１２は、Ｃｕ箔付き樹脂フィルム１１を構成する熱硬化性の接着用樹脂１３と放熱板１２を当接させ、加熱しながら加圧して接着用樹脂１３を硬化させながら接合されている。
【００１４】
この高放熱型プラスチックパッケージ１０には、Ｃｕ箔付き樹脂フィルム１１のＣｕ箔上にＣｕめっきが施された後、フォトリソグラフィ法とエッチングによって形成される導体配線パターン１６が設けられている。更に、この高放熱型プラスチックパッケージ１０には、導体配線パターン１６が形成された面に、導体配線パターン１６の必要部分を開口部から露出させるためにソルダーレジスト膜１７が設けられている。
【００１５】
図２（Ａ）〜（Ｃ）に示すように、本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージ１０ａは、前記の高放熱型プラスチックパッケージ１０の場合の構造に加えて半導体素子からの発熱を放熱するための放熱板１２ａの下面側にも導体配線パターン１６ａが設けられている。この場合の放熱板１２ａには、上、下面側の導体配線パターン１６、１６ａ間の電気的導通を取るためのスルーホール１９用の貫通孔１８が、予めドリル等を用いて設けられている。そして、この貫通孔１８には、貫通孔１８の壁面で短絡しないように形成された導体配線によって、上、下面側の導体配線パターン１６、１６ａ間の電気的導通が形成されている。また、放熱板１２ａには、前記の高放熱型プラスチックパッケージ１０の場合と同様に、Ｃｕ箔付き樹脂フィルム１１に接合して形成されている接着用樹脂１３との接合時にキャビティ部１４に発生する樹脂染みだしを防止するための制止部が設けられている。
【００１６】
この高放熱型プラスチックパッケージ１０ａは、上面側に半導体素子を実装し、下面側に半田ボール等の外部接続端子を接続するキャビティアップ型のパッケージが構成でき、半導体素子からの発熱を効率よく放熱させると同時に、パッケージの両面を有効に利用して、パッケージの寸法を極めて小さくすることができる。なお、この変形例の高放熱型プラスチックパッケージ１０ａは、下面側の導体配線パターン１６ａがプリプレグを介して接合されているＣｕ箔をもとに形成されたものであってもよく、下面側の導体配線パターン１６ａがＣｕ箔付き樹脂フィルム１１をもとにして形成されたものであってもよい。
【００１７】
ここで、図３（Ａ）、（Ｂ）を参照しながら本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０及び変形例の高放熱型プラスチックパッケージ１０ａの放熱板１２、１２ａの制止部２０の形態について説明する。なお、図３（Ａ）、（Ｂ）では、高放熱型プラスチックパッケージ１０を代表として説明する。図３（Ａ）に示すように、高放熱型プラスチックパッケージ１０に用いられる放熱板１２には、Ｃｕ箔付き樹脂フィルム１１がこのＣｕ箔付き樹脂フィルム１１に設けられた切り欠き１５の周縁に若干のクリアランスを有して装着できる段差２１からなる制止部２０を有するのがよい。この段差２１によって、放熱板１２の半導体素子が実装されるキャビティ部１４は、Ｃｕ箔付き樹脂フィルム１１が接合される部分より高くした凸形状に形成されている。Ｃｕ箔付き樹脂フィルム１１を放熱板１２に加熱圧着した時の接着用樹脂１３の樹脂染みだしは、段差２１からなる制止部２０によって遮られるので、キャビティ部１４上への樹脂染みだしを少なくすることができる。
【００１８】
また、図３（Ｂ）に示すように、高放熱型プラスチックパッケージ１０に用いられる放熱板１２には、Ｃｕ箔付き樹脂フィルム１１がこのＣｕ箔付き樹脂フィルム１１に設けられた切り欠き１５の周縁に沿って形成される溝２２からなる制止部２０を有するのがよい。この溝２２は、放熱板１２の半導体素子が実装されるキャビティ部１４と、Ｃｕ箔付き樹脂フィルム１１が接合される部分との間を隔離部分を形成している。Ｃｕ箔付き樹脂フィルム１１を放熱板１２に加熱圧着した時の接着用樹脂１３の樹脂染みだしは、溝２２からなる制止部２０に樹脂を落とし込むことができるので、キャビティ部１４上への樹脂染みだしを少なくすることができる。なお、放熱板１２に形成される制止部２０の形態は、溝２２を有すると共に、キャビティ部１４をＣｕ箔付き樹脂フィルム１１が接合される部分より高くした凸形状に形成したものであってもよい。
【００１９】
次いで、図４（Ａ）〜（Ｅ）を参照しながら本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０の製造方法を説明する。
図４（Ａ）に示すように、放熱板１２と接合して高放熱型プラスチックパッケージ１０を作製するためのＣｕ箔付き樹脂フィルム１１は、１０〜２０μｍ程度の厚みのＣｕ箔２３に、ガラスクロス基材を含まない熱硬化型のＢステージ状態の接着用樹脂１３をドクターブレード法や、ロールコーター法等で５０〜１００μｍ程度に塗布してフィルム状に形成している。なお、Ｃｕ箔は、予め、還元性雰囲気で熱処理を行ったものを用いると、接着用樹脂１３を接合した後に接合強度の高い安定した引き剥がし強さを得ることができる。
【００２０】
次に、図４（Ｂ）に示すように、Ｃｕ箔付き樹脂フィルム１１には、半導体素子を搭載するためのキャビティ部１４（図４（Ｅ）参照）用の切り欠き１５を打ち抜きプレス加工機等で穿設して設けている。Ｃｕ箔付き樹脂フィルム１１には、Ｃｕ箔２３と接着用樹脂１３の接合体であるので、樹脂がガラスクロス等を含まず接合体自体が薄いので、ルーター加工機等を用いることなく、打ち抜きプレス加工機の打ち抜きで効率的に精度よく、安価に切り欠き１５を形成することができる。
【００２１】
次に、図４（Ｃ）に示すように、Ｃｕや、Ｃｕ合金等の熱伝導率が高く、０．２ｍｍ程度の厚みの金属製部材からなる放熱板１２には、制止部２０の一例である、例えば、エッチングや、切削加工等によってキャビティ部１４となる部分が凸形状になるようにしている。これによって、この凸形状からなるキャビティ部１４の周縁には、Ｃｕ箔付き樹脂フィルム１１に設けた切り欠き１５の周縁に若干のクリアランスを有して沿うようになるように周囲に段差２１からなる接着用樹脂１３の樹脂染みだしを防止するための制止部２０が形成される。なお、図示しないが制止部２０は、例えば、エッチングや、切削加工等によって形成される溝２２（図３（Ｂ）参照）で形成されていてもよい。また、放熱板１２には、ホーニィング加工や、ブラックオキサイド等によって表面を表面粗化して接着用樹脂１３と貼り合せた時の接合強度を向上させることができるようにしてもよい。
【００２２】
次に、図４（Ｄ）に示すように、Ｃｕ箔付き樹脂フィルム１１と放熱板１２は、Ｃｕ箔付き樹脂フィルム１１の接着用樹脂１３側と放熱板１２を直接当接させ、真空プレス等を用いて加熱圧着している。真空プレス機を用いて加熱圧着する場合には、例えば、真空度を５０ｍｍＨｇ以下とし、温度１７０〜１９０℃、圧力２〜３ＭＰａ、１７５℃以上の温度中を４０分以上加熱及び加圧を保持させて接着用樹脂１３を硬化させて貼り合わせている。この加熱圧着によって、接着用樹脂１３には、樹脂染みだしが発生するが、制止部２０でこの樹脂染みだしを制止して、キャビティ部１４上への樹脂染みだしを少なくしている。
【００２３】
次に、図４（Ｅ）に示すように、Ｃｕ箔付き樹脂フィルム１１のＣｕ箔２３上には、無電解Ｃｕめっき及び電界ＣｕめっきからなるＣｕめっき（図示せず）が施された後、通常のセミアディテブや、サブトラクティブ等によって導体配線パターン１６が形成される。更に、導体配線パターン１６が形成された面に、導体配線パターン１６の必要部分を開口部から露出させるためにソルダーレジスト膜１７が形成されることで、高放熱型プラスチックパッケージ１０が作製されている。なお、高放熱型プラスチックパッケージ１０は、シート状基材に多数個が形成されているので、半導体素子等が実装された後、最終的には切断箇所２４で切断して作製している。
【００２４】
次いで、図５（Ａ）〜（Ｅ）を参照しながら本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージ１０ａの製造方法を説明する。
図５（Ａ）に示すように、高放熱型プラスチックパッケージ１０ａを作製するためのＣｕ箔付き樹脂フィルム１１は、高放熱型プラスチックパッケージ１０の場合と同様にＣｕ箔２３に接着用樹脂１３を塗布してフィルム状に作製され、打ち抜きプレス加工機で切り欠き１５を形成している。
【００２５】
次に、図５（Ｂ）に示すように、Ｃｕや、Ｃｕ合金等の熱伝導率の高い金属製部材からなる放熱板１２ａには、高放熱型プラスチックパッケージ１０の場合と同様に、キャビティ部１４を凸形状になるようにして、このキャビティ部１４の周縁に段差２１からなる接着用樹脂１３の樹脂染みだしを防止するための制止部２０を形成している。なお、図示しないが、高放熱型プラスチックパッケージ１０の場合と同様に、制止部２０は、例えば、溝２２（図３（Ｂ）参照）で形成されていてもよい。そして、放熱板１２ａには、パッケージの上、下面側の導体配線パターン１６、１６ａ（図５（Ｅ）参照）間の電気的導通を取るためのスルーホール１９用の貫通孔１８をドリルマシーン等を用いて形成している。更に、放熱板１２ａには、ホーニィング加工や、ブラックオキサイド等によって表面に表面粗化を行っている。そして、放熱板１２ａの下面側には、下面側の導体配線パターン１６ａを形成するためのプリプレグ２５及びＣｕ箔２３ａを準備している。
【００２６】
次に、図５（Ｃ）に示すように、放熱板１２ａの上面側の表面には、切り欠き１５を形成したＣｕ箔付き樹脂フィルム１１の接着用樹脂１３を直接当接させると同時に、放熱板１２ａの下面側の表面には、プリプレグ２５を介してＣｕ箔２３ａを当接し、高放熱型プラスチックパッケージ１０の場合と同様に真空プレス等を用いて加熱しながら加圧して、全体を一度に接合して貼り合わせている。この貼り合せによって、放熱板１２ａの貫通孔１８内には、接着用樹脂１３やプリプレグ２５で充填される。この加熱圧着によって、接着用樹脂１３には、樹脂染みだしが発生するが、制止部２０でこの樹脂染みだしを制止して、キャビティ部１４上への樹脂染みだしを少なくしている。
【００２７】
次に、図５（Ｄ）に示すように、接着用樹脂１３やプリプレグ２２で充填された貫通孔１８の壁面が樹脂で被覆されるようにして貫通孔１８の径よりも小さい径からなるスルーホール１９用の孔２６をドリルマシーン等で穿設する。そして、無電解Ｃｕめっき及び電界Ｃｕめっきを施して孔２６の壁面にＣｕめっき膜２７が形成されてなるスルーホール１９を介して上面側のＣｕ箔２３及びＣｕめっき膜２７と、下面側のＣｕ箔２３ａ及びＣｕめっき膜２７とを電気的に導通状態とする。
【００２８】
次に、図５（Ｅ）に示すように、高放熱型プラスチックパッケージ１０の場合と同様に、上面側のＣｕ箔２３及びＣｕめっき膜２７と、下面側のＣｕ箔２３ａ及びＣｕめっき膜２７の両面に、通常のセミアディテブ法や、サブトラクティブ法等によって導体配線パターン１６、１６ａが形成される。更に、導体配線パターン１６、１６ａが形成された面に、導体配線パターン１６、１６ａの必要部分を開口部から露出させるためにソルダーレジスト膜１７、１７ａが形成されることで、高放熱型プラスチックパッケージ１０ａが作製されている。
【００２９】
なお、高放熱型プラスチックパッケージ１０ａは、高放熱型プラスチックパッケージ１０の場合と同様に、シート状基材に多数個が形成されているので、半導体素子等が実装された後、最終的には切断箇所２４で切断して作製している。また、半導体素子が搭載されるキャビティ部１４の下側には、放熱板１２ａに接続しソルダーレジスト膜１７ａの開口部から露出するサーマルビア（図示せず）を設けることで、半導体素子からの発熱を放熱する効果を更に向上させることができる。また、半導体素子が搭載されるキャビティ部１４の下側の放熱板１２ａの裏面側には、放熱板１２ａの上面側に設けた段差２１からなる制止部２０と同様の凸形状部（図示せず）を形成し、上記と同様のサーマルビア（図示せず）を設けることもできる。これにより、半導体素子からの発熱の放熱効果を向上できると共に、放熱板１２ａの両面に均等な凸形状部を形成することで、放熱板１２ａの反りの発生を防止することができる。更に、上述の高放熱型プラスチックパッケージ１０ａの製造方法においては、放熱板１２ａの下面側の導体配線パターン１６ａを形成するためにプリプレグ２５及びＣｕ箔２３ａを用いているが、上面側の導体配線パターン１６を形成するために用いたＣｕ箔付き樹脂フィルム１１と同様のＣｕ箔付き樹脂フィルム１１を用いて形成してもよい。
【００３０】
次いで、図６（Ａ）〜（Ｄ）を参照しながら本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０及び変形例の高放熱型プラスチックパッケージ１０ａの他の製造方法を説明する。なお、図６（Ａ）〜（Ｄ）では、高放熱型プラスチックパッケージ１０を用いた他の製造方法を代表として説明する。
図６（Ａ）に示すように、高放熱型プラスチックパッケージ１０を作製するためのＣｕ箔付き樹脂フィルム１１は、前記の全てのパッケージの場合と同様にＣｕ箔２３に接着用樹脂１３を塗布してフィルム状に作製され、このＣｕ箔付き樹脂フィルム１１に打ち抜きプレス加工機で切り欠き１５を形成している。
【００３１】
次に、図６（Ｂ）に示すように、半導体素子からの発熱を放熱するためにＣｕや、Ｃｕ合金等の熱伝導率の高い金属製部材からなり、ホーニング加工や、ブラックオキサイド等によって表面を表面粗化して接着用樹脂１３と貼り合せた時に接合強度を向上させることができる放熱板１２を準備する。また、Ｃｕ箔付き樹脂フィルム１１に形成した切り欠き１５に嵌合できる凸部２８を備え、樹脂や、金属で形成された押さえ治具２９を準備する。更に、押さえ治具２９とＣｕ箔付き樹脂フィルム１１との間に挟み込むための低融点樹脂フィルム３０と離型フィルム３１を準備する。
【００３２】
次に、図６（Ｃ）に示すように、放熱板１２上には、Ｃｕ箔付き樹脂フィルム１１をＣｕ箔付き樹脂フィルム１１の接着用樹脂１３側が放熱板１２上に接するように載置し、更に、低融点樹脂フィルム３０を介する離型フィルム３１をキャビティ部１４及びＣｕ箔付き樹脂フィルム１１上に載置し、低融点樹脂フィルム３０の上から押さえ治具２９で押し付けるている。押さえ治具２９の凸部２８は、Ｃｕ箔付き樹脂フィルム１１の切り欠き１５に嵌合しているので、この凸部２８によって、キャビティ部１４が低融点樹脂フィルム３０を介する離型フィルム３１でシールすることができる。そして、この状態のままで接着用樹脂１３を加熱してＣｕ箔付き樹脂フィルム１１と放熱板１２を接合させると共に、接着用樹脂１３のキャビティ部１４への樹脂染みだしを低融点樹脂フィルム３０を介する離型フィルム３１で制止させている。
【００３３】
次に、図６（Ｄ）に示すように、Ｃｕ箔付き樹脂フィルム１１と放熱板１２の接合後は、押さえ治具２９を取り外し、更に、低融点樹脂フィルム３０を介する離型フィルム３１を除去している。なお、この後は、上述の製造方法と同様にして作製され、高放熱型プラスチックパッケージ１０及び変形例の高放熱型プラスチックパッケージ１０ａが作製されている。
【００３４】
【発明の効果】
本願発明に係る高放熱型プラスチックパッケージは、Ｃｕ箔に接着用樹脂が接合されて形成され、キャビティ部用の切り欠きが穿設されて有するＣｕ箔付き樹脂フィルムと、放熱板が、接着用樹脂で直接接合される高放熱型プラスチックパッケージであって、放熱板にはＣｕ箔付き樹脂フィルムの接着用樹脂との接合時の樹脂染みだしを防止するための制止部を有するので、Ｃｕ箔付き樹脂フィルムと放熱板の接合にプリプレグ等の後付けの接着材を用いていないで、パッケージの厚さが薄く、安価であり、接合精度のよい高放熱型プラスチックパッケージが提供できる。また、接着用樹脂の接合時のキャビティ部への樹脂染みだしを防止でき、半導体素子の実装信頼性を向上することができる。
【００３５】
また、本願発明に係る高放熱型プラスチックパッケージは、制止部が切り欠きにクリアランスを有して装着できる段差からなるので、キャビティ部に形成できる段差部分で接着用樹脂のキャビティ部への樹脂染みだしを防止でき、半導体素子の実装信頼性を向上することができる。
【００３６】
また、本願発明に係る高放熱型プラスチックパッケージは、制止部が切り欠きの周縁に沿って形成される溝からなるので、溝部分で接着用樹脂のキャビティ部への樹脂染みだしを防止でき、半導体素子の実装信頼性を向上することができる。
【００３７】
本願発明に係る高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔に接着用樹脂を接合し、キャビティ部用の切り欠きを穿設して形成するＣｕ箔付き樹脂フィルムと、放熱板を、接着用樹脂で直接接合して形成する高放熱型プラスチックパッケージの製造方法であって、放熱板にはＣｕ箔付き樹脂フィルムの切り欠きの周縁に沿うように段差又は溝を形成する工程と、接着用樹脂を加熱してＣｕ箔付き樹脂フィルムと放熱板を接合すると共に、接着用樹脂の樹脂染みだしを段差又は溝で制止させる工程を有するので、接着用樹脂で放熱板と容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージを製造できる。また、キャビティ部の放熱板上に接着用樹脂の樹脂染みだしの発生を段差又は溝部分で防止でき、半導体素子の接合信頼性を高くして実装でき、半導体素子からの発熱を効率よく放熱できる高放熱型プラスチックパッケージを製造できる。
【００３８】
請求項５記載の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔に接着用樹脂を接合し、キャビティ部用の切り欠きを穿設して形成するＣｕ箔付き樹脂フィルムと、放熱板を、接着用樹脂で直接接合して形成する高放熱型プラスチックパッケージの製造方法であって、切り欠きに嵌合できる凸部を有する押さえ治具を用いて低融点樹脂フィルムを介する離型フィルムをキャビティ部及びＣｕ箔付き樹脂フィルム上に押し付ける工程と、接着用樹脂を加熱してＣｕ箔付き樹脂フィルムと放熱板を接合すると共に、接着用樹脂の樹脂染みだしを低融点樹脂フィルムを介する離型フィルムで制止させる工程と、押さえ治具を除去すると共に、低融点樹脂フィルムを介する離型フィルムを除去する工程を有するので、接着用樹脂で放熱板と容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージを製造できる。また、キャビティ部の放熱板上に接着用樹脂の樹脂染みだしの発生を押さえ治具で押し付けられた低融点樹脂フィルムを介する離型フィルムで防止でき、半導体素子の接合信頼性を高くして実装でき、半導体素子からの発熱を効率よく放熱できる高放熱型プラスチックパッケージを製造できる。
【図面の簡単な説明】
【図１】（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの斜視図、縦断面図である。
【図２】（Ａ）〜（Ｃ）はそれぞれ同変形例の高放熱型プラスチックパッケージの上面側斜視図、下面側斜視図、縦断面図である。
【図３】（Ａ）、（Ｂ）はそれぞれ同高放熱型プラスチックパッケージ及び変形例の高放熱型プラスチックパッケージの放熱板の制止部の説明図である。
【図４】（Ａ）〜（Ｅ）はそれぞれ同高放熱型プラスチックパッケージの製造方法の説明図である。
【図５】（Ａ）〜（Ｅ）はそれぞれ同変形例の高放熱型プラスチックパッケージの製造方法の説明図である。
【図６】（Ａ）〜（Ｄ）はそれぞれ同高放熱型プラスチックパッケージ及び変形例の高放熱型プラスチックパッケージの他の製造方法の説明図である。
【図７】（Ａ）〜（Ｄ）は従来の高放熱型プラスチックパッケージの製造方法の説明図である。
【符号の説明】
１０、１０ａ：高放熱型プラスチックパッケージ、１１：Ｃｕ箔付き樹脂フィルム、１２、１２ａ：放熱板、１３：接着用樹脂、１４：キャビティ部、１５：切り欠き、１６、１６ａ：導体配線パターン、１７、１７ａ：ソルダーレジスト膜、１８：貫通孔、１９：スルーホール、２０：制止部、２１：段差、２２：溝、２３、２３ａ：Ｃｕ箔、２４：切断箇所、２５：プリプレグ、２６：孔、２７：Ｃｕめっき膜、２８：凸部、２９：押さえ治具、３０：低融点樹脂フィルム、３１：離型フィルム[0001]
[Technical field to which the invention belongs]
The present invention relates to a high heat dissipation plastic package for mounting a semiconductor element and a manufacturing method thereof, and more particularly to a high heat dissipation plastic package formed by bonding a resin substrate and a heat dissipation plate and a manufacturing method thereof.
[0002]
[Prior art]
With recent high performance and miniaturization of semiconductor devices, plastic packages for mounting semiconductor devices have increased the amount of heat generated from the semiconductor devices, increased the number of terminals for external connection, and mounting of semiconductor devices From the viewpoints of performance, cost reduction, impedance reduction, and the like, high heat dissipation plastic packages such as BGA (Ball Grid Array) type having a high heat dissipation structure are often used. This high heat dissipation type plastic package has a single layer or multiple layers made of BT resin (resin mainly composed of bis-maleimide triazine) or polyimide resin provided with a conductor layer formed by bonding Cu foil on one side or both sides. A heat radiating plate made of a metal plate such as Cu having a high thermal conductivity is joined to a high heat resistant resin substrate via an adhesive such as a prepreg (for example, see Patent Document 1 and Patent Document 2).
[0003]
With reference to FIGS. 7A to 7D, a conventional method of manufacturing a high heat dissipation plastic package 50 will be described. As shown in FIG. 7 (A), a through hole 53a for a through hole 53 is formed in a resin substrate 51 containing a glass cloth to which a Cu foil 52 is bonded in order to conduct the front and back surfaces. Further, an electroless Cu plating film is provided on the front surface, the back surface, and the wall surface of the through-hole 53a, and the Cu plating film 54 is formed by energizing the electroless Cu plating film to provide the electrolytic Cu plating film. Next, as shown in FIG. 7B, a dry film is stuck on the Cu plating film 54, an etching resist pattern is formed by a photolithography method in which a pattern mask is brought into contact, exposed and developed, and an etching resist is formed. The Cu plating film 54 and the Cu foil 52 exposed from the opening of the pattern are removed by etching, and the dry film is peeled and removed to form the wiring pattern 55. Next, as shown in FIG. 7C, in order to form a cavity part for mounting a semiconductor element on the resin substrate 51 on which the wiring pattern 55 is formed, it is substantially viewed in plan using a router processing machine. A notch 56 having a rectangular shape is formed. Next, as shown in FIG. 7D, a heat dissipation plate 57 made of a resin substrate 51 and a Cu plate or the like is bonded by thermocompression bonding via an adhesive 58 such as a prepreg, thereby producing a high heat dissipation type plastic package 50. is doing. Note that a solder resist film 59 is usually formed on the upper surface side of the resin substrate 51 so that a necessary portion of the wiring pattern 55 is exposed from the opening.
[0004]
As a BGA type package with good heat dissipation, a package has been proposed in which a TAB (Tape Automated Bonding) tape is joined to a reinforcing plate with good heat dissipation with a thermosetting adhesive (for example, see Patent Document 3). .
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 7-321250 (page 1-14, FIG. 1)
[Patent Document 2]
Japanese Patent Laid-Open No. 10-308467 (page 1-5, FIG. 2)
[Patent Document 3]
Japanese Unexamined Patent Publication No. 2001-68512 (page 1-6, FIG. 1)
[0006]
[Problems to be solved by the invention]
However, the conventional high heat dissipation plastic package and the manufacturing method thereof as described above have the following problems.
(1) Since the base material for forming a conductor wiring pattern and the heat radiating plate are joined by using an adhesive to be attached later, the overall thickness after joining is increased by the thickness of the adhesive part, For example, it is hindering use in electronic devices such as mobile phones and personal computers that are required to be light and thin.
(2) When a retrofitting adhesive is used to join the conductor wiring pattern forming substrate and the heat sink, the adhesive is applied to the resin substrate or the heat sink with high accuracy, or the adhesive sheet is accurately applied. Adhering requires time, man-hours, and material costs, which increases the cost of the high heat dissipation plastic package. In addition, when bonding is performed using an adhesive or an adhesive sheet, bleeding of the bonding resin into the cavity portion occurs at the time of bonding, resulting in a decrease in reliability when the semiconductor element is mounted in the cavity portion. Yes.
The present invention has been made in view of such circumstances, and without using a thick adhesive material such as a prepreg between the resin substrate and the heat radiating plate, there is little resin oozing out of the adhesive material, and it is inexpensive. An object of the present invention is to provide a high heat radiation type plastic package with good joining accuracy and a small thickness, and a method for manufacturing the same.
[0007]
[Means for Solving the Problems]
The high heat radiation type plastic package according to the present invention, which meets the above-mentioned object, is formed by bonding an adhesive resin to a Cu foil, and is a cut for a cavity portion for placing a semiconductor element in a substantially central portion in plan view. A resin film with a Cu foil having a notch and a heat radiating plate for radiating heat generated from a semiconductor element are directly bonded with an adhesive resin, and the heat radiating plate includes Cu It has a restraining part for preventing the resin oozing out at the time of joining of the resin for adhesion of the resin film with foil. This eliminates the use of a post-adhesive adhesive such as a prepreg for joining the heat-radiating plate to the resin film with Cu foil, which is a substrate for forming a conductor wiring pattern. It is possible to provide a high heat radiation type plastic package with good bonding accuracy between the resin film and the heat sink. In addition, since it is possible to prevent the resin from bleeding into the cavity during bonding of the adhesive resin, it is possible to provide a high heat radiation type plastic package capable of improving the mounting reliability of the semiconductor element.
[0008]
Here, it is preferable that the high heat radiation type plastic package has a step where the stop portion can be mounted with a slight clearance in the notch. As a result, it is possible to prevent the resin from bleeding into the cavity portion of the adhesive resin at the step portion that can be formed so that the cavity portion protrudes in a convex shape, so that high heat radiation type plastic that can improve the mounting reliability of the semiconductor element Package can be provided.
[0009]
In addition, the high heat dissipation plastic package may include a groove in which the stop portion is formed along the periphery of the notch. Thereby, since the resin portion can be prevented from leaking into the cavity portion of the adhesive resin at the groove portion, it is possible to provide a high heat radiation type plastic package capable of improving the mounting reliability of the semiconductor element.
[0010]
The manufacturing method of the high heat radiation type plastic package according to the present invention, which meets the above-mentioned object, is a method for cutting a cavity part for bonding a resin for bonding to a Cu foil and placing a semiconductor element in a substantially central part in plan view. A method of manufacturing a high heat radiation type plastic package in which a resin film with Cu foil formed by drilling a notch and a heat sink for radiating heat generated from a semiconductor element are directly joined with an adhesive resin. , A step of forming a step or groove along the periphery of the notch of the Cu foil resin film on the heat sink, and heating the adhesive resin to bond the Cu foil resin film and the heat sink, A step of stopping the resin oozing of the resin with a step or a groove. Accordingly, it is possible to provide a method for manufacturing an inexpensive high heat radiation type plastic package that can be bonded to the heat sink easily and accurately at once with the adhesive resin for the resin film with Cu foil and that is thin. In addition, the occurrence of resin oozing out of the adhesive resin on the heat sink of the cavity can be prevented by the step or groove, so that the semiconductor element can be mounted with high bonding reliability, and the heat generated from the semiconductor element can be radiated efficiently. It is possible to provide a method for manufacturing a high heat dissipation plastic package.
[0011]
According to another aspect of the present invention, there is provided a method for manufacturing a high heat dissipation plastic package according to the present invention, wherein a bonding resin is bonded to a Cu foil and a semiconductor element is placed in a substantially central portion in plan view. Manufacturing of high heat dissipation plastic packages in which a resin film with a Cu foil formed by drilling a notch for a part and a heat sink for radiating heat generated from a semiconductor element are directly joined with an adhesive resin A method of pressing a release film via a low-melting point resin film onto a cavity part and a resin film with Cu foil using a pressing jig having a convex part that can be fitted into a notch of the resin film with Cu foil; The adhesive resin is heated to bond the resin film with the Cu foil and the heat sink, and the resin oozing of the adhesive resin is controlled by the release film via the low melting point resin film. A step of, to remove the pressing jig, comprising the step of removing the release film through a low-melting point resin film. Accordingly, it is possible to provide a method for manufacturing an inexpensive high heat radiation type plastic package that can be bonded to the heat sink easily and accurately at once with the adhesive resin for the resin film with Cu foil and that is thin. In addition, it is possible to prevent the occurrence of resin seepage of the adhesive resin on the heat sink of the cavity with a release film through a low melting point resin film pressed by a holding jig, thereby increasing the bonding reliability of the semiconductor element. It is possible to provide a manufacturing method of a high heat radiation type plastic package that can be mounted and can efficiently dissipate heat generated from a semiconductor element.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a perspective view and a longitudinal sectional view of a high heat dissipation plastic package according to an embodiment of the present invention, respectively, and FIGS. 2A to 2C are the same modification examples. 3A and FIG. 3B are a heat radiating plate of the high heat radiating plastic package and a modified high heat radiating plastic package, respectively. 4A to 4E are explanatory diagrams of the manufacturing method of the high heat dissipation plastic package, and FIGS. 5A to 5E are high heat dissipation plastics of the same modification. FIGS. 6A to 6D are explanatory views of another manufacturing method of the high heat dissipation plastic package and the modified high heat dissipation plastic package, respectively.
[0013]
As shown in FIGS. 1A and 1B, a high heat dissipation plastic package 10 according to an embodiment of the present invention includes a resin film 11 with Cu foil and a heat dissipation plate 12. The resin film 11 with Cu foil is formed into a film by applying an adhesive resin 13 that does not include a glass cloth base material to a Cu foil. The resin film 11 with Cu foil is provided with a notch 15 for a cavity portion 14 for mounting a semiconductor element in a substantially central portion of the package in a plan view by punching with a punching press or the like. On the other hand, the heat radiating plate 12 is made of a Cu plate or the like having a high thermal conductivity so that heat generated from the semiconductor element can be efficiently radiated, and the surface is roughened to improve the bonding strength with the adhesive resin 13. Has been applied. Further, the heat radiating plate 12 is provided with a restraining portion for preventing resin oozing that occurs in the cavity portion 14 when bonded to the adhesive resin 13 formed by bonding to the resin film 11 with Cu foil. ing. Then, the resin film 11 with Cu foil and the heat radiating plate 12 are brought into contact with the thermosetting adhesive resin 13 and the heat radiating plate 12 constituting the resin film 11 with Cu foil, and are heated and pressed to apply the adhesive resin 13. It is joined while curing.
[0014]
This high heat dissipation plastic package 10 is provided with a conductor wiring pattern 16 formed by photolithography and etching after Cu plating is performed on the Cu foil of the resin film 11 with Cu foil. Further, the high heat dissipation plastic package 10 is provided with a solder resist film 17 on the surface on which the conductor wiring pattern 16 is formed in order to expose a necessary portion of the conductor wiring pattern 16 from the opening.
[0015]
As shown in FIGS. 2A to 2C, a high heat dissipation plastic package 10a of a modification according to an embodiment of the present invention includes a semiconductor in addition to the structure of the high heat dissipation plastic package 10 described above. A conductor wiring pattern 16a is also provided on the lower surface side of the heat radiating plate 12a for radiating heat generated from the element. In this case, the heat radiating plate 12a is previously provided with a through hole 18 for a through hole 19 for establishing electrical continuity between the upper and lower conductor wiring patterns 16 and 16a using a drill or the like. In the through hole 18, electrical continuity between the upper and lower conductor wiring patterns 16 and 16 a is formed by conductor wiring formed so as not to be short-circuited on the wall surface of the through hole 18. Further, similar to the case of the high heat dissipation plastic package 10, the heat radiating plate 12 a is generated in the cavity portion 14 when bonded to the adhesive resin 13 formed by bonding to the resin film 11 with Cu foil. A restraining portion is provided for preventing resin seepage.
[0016]
The high heat dissipation plastic package 10a can be configured as a cavity-up type package in which a semiconductor element is mounted on the upper surface side and an external connection terminal such as a solder ball is connected to the lower surface side, and heat generated from the semiconductor element is efficiently radiated. At the same time, the size of the package can be made extremely small by effectively using both sides of the package. The high heat radiation type plastic package 10a of this modification may be formed on the basis of a Cu foil in which a conductor wiring pattern 16a on the lower surface side is bonded via a prepreg. The wiring pattern 16a may be formed based on the resin film 11 with Cu foil.
[0017]
Here, referring to FIGS. 3 (A) and 3 (B), the heat radiating plates 12, 12a of the high heat radiating plastic package 10 and the modified high heat radiating plastic package 10a according to the embodiment of the present invention are restrained. 20 forms will be described. 3A and 3B, the high heat dissipation plastic package 10 will be described as a representative. As shown in FIG. 3 (A), the heat radiating plate 12 used in the high heat radiating type plastic package 10 has a resin film 11 with Cu foil slightly on the periphery of the notch 15 provided in the resin film 11 with Cu foil. It is preferable to have the restraining part 20 which consists of the level | step difference 21 which can be mounted | worn with this clearance. Due to the step 21, the cavity portion 14 on which the semiconductor element of the heat radiating plate 12 is mounted is formed in a convex shape higher than the portion to which the resin film 11 with Cu foil is joined. When the resin film 11 with Cu foil is heat-pressed to the heat radiating plate 12, the resin oozing of the adhesive resin 13 is blocked by the restraining portion 20 composed of the step 21, thereby reducing the oozing of the resin onto the cavity portion 14. be able to.
[0018]
Further, as shown in FIG. 3B, the heat sink 12 used in the high heat dissipation plastic package 10 has a resin film 11 with Cu foil and a peripheral edge of a notch 15 provided in the resin film 11 with Cu foil. It is good to have the stop part 20 which consists of the groove | channel 22 formed along. This groove 22 forms an isolation part between the cavity part 14 where the semiconductor element of the heat sink 12 is mounted and the part where the resin film 11 with Cu foil is joined. The resin bleed out of the adhesive resin 13 when the resin film 11 with Cu foil is heat-pressed to the heat sink 12 can drop the resin into the restraining portion 20 composed of the groove 22, so that the resin bleed onto the cavity portion 14. The stock can be reduced. In addition, the form of the restraining part 20 formed in the heat sink 12 may have a groove 22 and a cavity part 14 formed in a convex shape higher than the part to which the resin film 11 with Cu foil is joined. Good.
[0019]
Next, a method for manufacturing the high heat dissipation plastic package 10 according to one embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 4 (A), a resin film 11 with Cu foil for bonding to the heat radiating plate 12 to produce the high heat radiating plastic package 10 is made of glass cloth on a Cu foil 23 having a thickness of about 10 to 20 μm. A thermosetting B-stage adhesive resin 13 that does not include a base material is applied to about 50 to 100 μm by a doctor blade method, a roll coater method, or the like to form a film. In addition, when Cu foil is heat-treated in a reducing atmosphere in advance, it is possible to obtain a stable peeling strength with high bonding strength after bonding the adhesive resin 13.
[0020]
Next, as shown in FIG. 4 (B), a cutout 15 for a cavity portion 14 (see FIG. 4 (E)) for mounting a semiconductor element is punched in the resin film 11 with Cu foil. Etc. are provided by drilling. Since the resin film 11 with Cu foil is a joined body of the Cu foil 23 and the adhesive resin 13, the resin does not contain glass cloth or the like, and the joined body itself is thin. The notch 15 can be formed efficiently and accurately at low cost by punching a processing machine.
[0021]
Next, as shown in FIG. 4C, the heat sink 12 made of a metal member having a high thermal conductivity such as Cu or Cu alloy and having a thickness of about 0.2 mm is an example of the restraining portion 20. For example, a portion that becomes the cavity portion 14 is formed in a convex shape by etching, cutting, or the like. As a result, a step 21 is formed around the periphery of the convex cavity portion 14 so as to follow the periphery of the notch 15 provided in the Cu foil-attached resin film 11 with a slight clearance. A restraining portion 20 is formed for preventing the resin 13 from sticking out. Although not shown, the restraining portion 20 may be formed by a groove 22 (see FIG. 3B) formed by, for example, etching or cutting. Further, the heat radiation plate 12 may be improved in bonding strength when the surface is roughened by a honing process or black oxide or the like and bonded to the adhesive resin 13.
[0022]
Next, as shown in FIG. 4D, the resin film 11 with Cu foil and the heat radiating plate 12 directly contact the heat radiating plate 12 with the bonding resin 13 side of the resin film with Cu foil 11 and vacuum press or the like. Is used for thermocompression bonding. When thermocompression bonding is performed using a vacuum press machine, for example, the degree of vacuum is set to 50 mmHg or less, and heating and pressurization are maintained for 40 minutes or more in a temperature of 170 to 190 ° C., a pressure of 2 to 3 MPa, and a temperature of 175 ° C. or more. The adhesive resin 13 is cured and bonded. By this thermocompression bonding, a resin ooze occurs in the adhesive resin 13, but the resin ooze is stopped by the stop portion 20 to reduce the resin bleed onto the cavity portion 14.
[0023]
Next, as shown in FIG. 4 (E), after Cu plating (not shown) made of electroless Cu plating and electric field Cu plating is applied on the Cu foil 23 of the resin film 11 with Cu foil, The conductor wiring pattern 16 is formed by normal semi-additive, subtractive, or the like. Furthermore, a solder resist film 17 is formed on the surface on which the conductor wiring pattern 16 is formed in order to expose a necessary portion of the conductor wiring pattern 16 from the opening, whereby the high heat dissipation plastic package 10 is manufactured. . Since the high heat radiation type plastic package 10 is formed in a large number on the sheet-like base material, it is finally cut at the cutting portion 24 after the semiconductor element or the like is mounted.
[0024]
Next, a manufacturing method of the high heat radiation type plastic package 10a of the modification according to the embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 5A, the resin film 11 with Cu foil for producing the high heat dissipation plastic package 10a is coated with the adhesive resin 13 on the Cu foil 23 as in the case of the high heat dissipation plastic package 10. Thus, the film is produced, and the notch 15 is formed by a punching press.
[0025]
Next, as shown in FIG. 5B, the cavity plate 12a made of a metal member having a high thermal conductivity such as Cu or Cu alloy has a cavity portion as in the case of the high heat dissipation plastic package 10. 14 is formed in a convex shape, and a restraining portion 20 is formed on the peripheral edge of the cavity portion 14 to prevent the resin 13 from adhering to the stepped portion 21 from leaking out. Although not shown, as in the case of the high heat dissipation plastic package 10, the restraining portion 20 may be formed by, for example, a groove 22 (see FIG. 3B). The heat radiating plate 12a is provided with a through hole 18 for a through hole 19 for establishing electrical continuity between the conductor wiring patterns 16 and 16a on the upper and lower surfaces of the package (see FIG. 5E). It is formed using. Furthermore, the surface of the heat radiating plate 12a is roughened by honing, black oxide, or the like. And the prepreg 25 and Cu foil 23a for forming the conductor wiring pattern 16a of the lower surface side are prepared in the lower surface side of the heat sink 12a.
[0026]
Next, as shown in FIG. 5C, the adhesive resin 13 of the Cu foil-attached resin film 11 in which the notch 15 is formed is brought into direct contact with the surface on the upper surface side of the heat radiating plate 12a. The Cu foil 23a is brought into contact with the surface on the lower surface side of the plate 12a through the prepreg 25, and is pressurized while being heated using a vacuum press or the like in the same manner as in the case of the high heat radiation type plastic package 10, so Bonded and bonded together. By this bonding, the through holes 18 of the heat radiating plate 12 a are filled with the adhesive resin 13 and the prepreg 25. By this thermocompression bonding, a resin ooze occurs in the adhesive resin 13, but the resin ooze is stopped by the stop portion 20 to reduce the resin bleed onto the cavity portion 14.
[0027]
Next, as shown in FIG. 5 (D), a through-hole having a diameter smaller than the diameter of the through-hole 18 so that the wall surface of the through-hole 18 filled with the adhesive resin 13 or the prepreg 22 is covered with the resin. A hole 26 for the hole 19 is drilled with a drill machine or the like. Then, the Cu foil 23 and the Cu plating film 27 on the upper surface side and the Cu Cu on the lower surface side are passed through the through hole 19 in which the electroless Cu plating and the electric field Cu plating are performed and the Cu plating film 27 is formed on the wall surface of the hole 26. The foil 23a and the Cu plating film 27 are electrically connected.
[0028]
Next, as shown in FIG. 5E, as in the case of the high heat dissipation plastic package 10, the Cu foil 23 and the Cu plating film 27 on the upper surface side, and the Cu foil 23a and the Cu plating film 27 on the lower surface side are formed. Conductor wiring patterns 16 and 16a are formed on both sides by a normal semi-additive method, a subtractive method, or the like. Furthermore, solder resist films 17 and 17a are formed on the surface on which the conductor wiring patterns 16 and 16a are formed in order to expose the necessary portions of the conductor wiring patterns 16 and 16a from the openings, so that a high heat dissipation type plastic package is formed. 10a is produced.
[0029]
As in the case of the high heat dissipation plastic package 10, the high heat dissipation plastic package 10 a is formed in a large number on the sheet-like base material, so that it is finally cut after the semiconductor element or the like is mounted. It is made by cutting at a location 24. Also, a thermal via (not shown) that is connected to the heat sink 12a and exposed from the opening of the solder resist film 17a is provided below the cavity portion 14 where the semiconductor element is mounted, thereby generating heat from the semiconductor element. The effect of radiating heat can be further improved. Further, on the back surface side of the heat sink 12a below the cavity portion 14 on which the semiconductor element is mounted, a convex portion (not shown) similar to the restraining portion 20 including the step 21 provided on the upper surface side of the heat sink 12a. ) And a thermal via (not shown) similar to the above can be provided. Thereby, while being able to improve the heat dissipation effect of the heat generated from the semiconductor element, it is possible to prevent warpage of the heat sink 12a by forming uniform convex portions on both surfaces of the heat sink 12a. Further, in the manufacturing method of the high heat dissipation plastic package 10a, the prepreg 25 and the Cu foil 23a are used to form the conductor wiring pattern 16a on the lower surface side of the heat radiating plate 12a. You may form using the resin film 11 with Cu foil similar to the resin film 11 with Cu foil used in order to form 16. FIG.
[0030]
Next, another manufacturing method of the high heat dissipation plastic package 10 and the modified high heat dissipation plastic package 10a according to the embodiment of the present invention will be described with reference to FIGS. 6A to 6D, another manufacturing method using the high heat dissipation plastic package 10 will be described as a representative.
As shown in FIG. 6A, the resin film 11 with Cu foil for producing the high heat dissipation plastic package 10 is obtained by applying the adhesive resin 13 to the Cu foil 23 as in the case of all the packages described above. A cut-out 15 is formed in the resin film 11 with Cu foil by a punching press machine.
[0031]
Next, as shown in FIG. 6 (B), it is made of a metal member having a high thermal conductivity such as Cu or Cu alloy in order to dissipate heat generated from the semiconductor element, and the surface is formed by honing or black oxide. A heat radiating plate 12 capable of improving the bonding strength when the surface is roughened and bonded to the adhesive resin 13 is prepared. Moreover, the convex part 28 which can be fitted to the notch 15 formed in the resin film 11 with Cu foil is provided, and the holding jig 29 formed with resin or metal is prepared. Furthermore, a low melting point resin film 30 and a release film 31 for sandwiching between the holding jig 29 and the resin film 11 with Cu foil are prepared.
[0032]
Next, as shown in FIG. 6C, the resin film 11 with Cu foil is placed on the heat sink 12 so that the adhesive resin 13 side of the resin film 11 with Cu foil is in contact with the heat sink 12. Furthermore, the release film 31 through the low melting point resin film 30 is placed on the cavity portion 14 and the resin film 11 with Cu foil, and is pressed from above the low melting point resin film 30 with a pressing jig 29. Since the convex portion 28 of the holding jig 29 is fitted in the notch 15 of the Cu foil-attached resin film 11, the cavity portion 14 is formed by the release film 31 through the low melting point resin film 30 by the convex portion 28. Can be sealed. Then, in this state, the adhesive resin 13 is heated to join the Cu foil-attached resin film 11 and the heat radiating plate 12, and the resin ooze into the cavity portion 14 of the adhesive resin 13 is removed from the low melting point resin film 30. It is stopped by a release film 31 interposed.
[0033]
Next, as shown in FIG. 6 (D), after joining the resin film 11 with Cu foil and the heat sink 12, the holding jig 29 is removed, and further the release film 31 via the low melting point resin film 30 is removed. is doing. Thereafter, the high heat dissipation plastic package 10 and the modified high heat dissipation plastic package 10a are manufactured in the same manner as the above-described manufacturing method.
[0034]
【The invention's effect】
According to the present invention A high heat dissipation plastic package is formed by bonding an adhesive resin to a Cu foil, and a resin film with a Cu foil having a notch for a cavity portion and a heat sink are directly bonded by an adhesive resin. The heat dissipation plate has a restraining portion for preventing the resin seepage during the bonding of the resin film with the Cu foil to the adhesive resin, and therefore the resin film with the Cu foil and the heat dissipation plate. Since no post-adhesive adhesive such as a prepreg is used for the bonding, a package with a thin package, a low cost, and a high heat radiation type plastic package with high bonding accuracy can be provided. In addition, it is possible to prevent the resin from bleeding into the cavity during bonding of the adhesive resin, and to improve the mounting reliability of the semiconductor element.
[0035]
Further, according to the present invention The high heat dissipation plastic package has a notch in the stop. clearance Therefore, it is possible to prevent the resin from bleeding into the cavity portion of the adhesive resin at the step portion that can be formed in the cavity portion, and to improve the mounting reliability of the semiconductor element.
[0036]
Also, According to the present invention The high heat dissipation plastic package consists of a groove formed along the periphery of the notch in the high heat dissipation type plastic package, which prevents the resin from seeping into the cavity part of the adhesive resin at the groove and improves the mounting reliability of the semiconductor element. Can be improved.
[0037]
According to the present invention The manufacturing method of the high heat dissipation type plastic package is to directly bond the resin film with Cu foil formed by bonding the resin for bonding to the Cu foil and drilling the notch for the cavity portion, and the heat sink. A step of forming a step or a groove along the periphery of the notch of the resin film with Cu foil on the heat sink, and heating the adhesive resin. While joining the resin film with the Cu foil and the heat sink, and having a step of stopping the resin oozing of the resin for bonding with a step or groove, it can be easily and accurately bonded to the heat sink with the adhesive resin at once, Thin and inexpensive high heat dissipation plastic packages can be manufactured. In addition, it is possible to prevent the occurrence of the resin oozing out of the adhesive resin on the heat sink of the cavity portion by the step or the groove portion, and it is possible to mount the semiconductor element with high bonding reliability, and to efficiently dissipate heat generated from the semiconductor element. High heat dissipation plastic package can be manufactured.
[0038]
The method of manufacturing a high heat radiation type plastic package according to claim 5 includes: bonding a resin for bonding to a Cu foil and forming a notch for a cavity portion to form a Cu foil-attached resin film and a heat sink. A method of manufacturing a high heat radiation type plastic package formed by directly bonding with a resin for a resin, wherein a release film via a low melting point resin film is formed by using a holding jig having a convex portion that can be fitted into a notch, and a cavity portion and The process of pressing on the resin film with Cu foil, and heating the adhesive resin to join the resin film with Cu foil and the heat sink, and restraining the resin oozing out of the adhesive resin with the release film through the low melting point resin film And the step of removing the pressing jig and the step of removing the release film via the low-melting point resin film. , Accurately, can joined at a time, it can be produced small thickness inexpensive high heat dissipation plastic package. In addition, it is possible to prevent the occurrence of resin oozing out of the adhesive resin on the heat sink of the cavity with a release film via a low melting point resin film pressed by a holding jig. In addition, a high heat radiation type plastic package capable of efficiently radiating heat generated from the semiconductor element can be manufactured.
[Brief description of the drawings]
1A and 1B are a perspective view and a longitudinal sectional view, respectively, of a high heat dissipation plastic package according to an embodiment of the present invention.
FIGS. 2A to 2C are a top perspective view, a bottom perspective view, and a longitudinal sectional view, respectively, of a high heat dissipation plastic package of the same modification.
FIGS. 3A and 3B are explanatory views of a restraining portion of a heat radiating plate of the high heat dissipation plastic package and a modified high heat dissipation plastic package, respectively.
4A to 4E are explanatory views of a method for manufacturing the same high heat dissipation plastic package, respectively.
FIGS. 5A to 5E are explanatory views of a manufacturing method of a high heat radiation type plastic package of the same modification example, respectively.
6A to 6D are explanatory views of another manufacturing method of the high heat dissipation plastic package and a modified high heat dissipation plastic package, respectively.
7A to 7D are explanatory views of a conventional method for manufacturing a high heat dissipation plastic package.
[Explanation of symbols]
10, 10a: High heat dissipation plastic package, 11: Resin film with Cu foil, 12, 12a: Heat dissipation plate, 13: Adhesive resin, 14: Cavity part, 15: Notch, 16, 16a: Conductor wiring pattern, 17 17a: Solder resist film, 18: Through hole, 19: Through hole, 20: Stopping part, 21: Step, 22: Groove, 23, 23a: Cu foil, 24: Cut location, 25: Prepreg, 26: Hole, 27: Cu plating film, 28: convex part, 29: holding jig, 30: low melting point resin film, 31: release film

Claims

A conductor formed of a Cu foil and a Cu plating film formed by bonding a resin for bonding to a Cu foil and having a notch for a cavity for mounting a semiconductor element in a substantially central portion in plan view. A resin film with a Cu foil on which a wiring pattern is formed, a metal heat radiating plate that is directly bonded to the lower surface of the adhesive resin of the resin film with a Cu foil and radiates heat generated from the semiconductor element, and It has a prepreg bonded to the lower surface of the heat sink and formed with a Cu foil and a conductor wiring pattern made of a Cu plating film , and the heat sink provides electrical continuity between the conductor wiring patterns formed on the upper and lower surfaces. a through hole for a through hole Cu plated film is formed for the contact adhesive resin and prepreg inside this through hole through holes are filled during the bonding, respectively, the heat dissipation When, a high heat dissipation plastic package carrying insulation between Cu plating film in the respective conductor wiring pattern formed on the upper and lower surfaces and the through hole in the resin and prepreg the contact wear,
The heat radiating plate has a restraining portion for preventing a resin ooze out when the resin film with Cu foil is joined to the adhesive resin, and the restraining portion has a clearance in the notch and the cavity portion. A high heat dissipation type plastic package characterized in that the step is formed so that the semiconductor element can be mounted.

A conductor formed of a Cu foil and a Cu plating film formed by bonding a resin for bonding to a Cu foil and having a notch for a cavity for mounting a semiconductor element in a substantially central portion in plan view. A resin film with a Cu foil on which a wiring pattern is formed, a metal heat radiating plate that is directly bonded to the lower surface of the adhesive resin of the resin film with a Cu foil and radiates heat generated from the semiconductor element, and It has a prepreg bonded to the lower surface of the heat sink and formed with a Cu foil and a conductor wiring pattern made of a Cu plating film , and the heat sink provides electrical continuity between the conductor wiring patterns formed on the upper and lower surfaces. a through hole for a through hole Cu plated film is formed for the contact adhesive resin and prepreg inside this through hole through holes are filled during the bonding, respectively, the heat dissipation When, a high heat dissipation plastic package carrying insulation between Cu plating film in the respective conductor wiring pattern formed on the upper and lower surfaces and the through hole in the resin and prepreg the contact wear,
The heat radiating plate has a restraining portion for preventing a resin ooze out when the resin film with Cu foil is joined to the adhesive resin, and the restraining portion is a groove formed along the periphery of the notch. High heat dissipation plastic package characterized by comprising

A resin film with Cu foil formed by bonding a resin for bonding to a Cu foil, and forming a notch for a cavity for mounting the semiconductor element in a substantially central portion in plan view, and the semiconductor element a metal heat dissipating plate for dissipating heat generated from a method for producing a high heat dissipation plastic package formed by joining directly with the adhesive resin,
The heat sink has a through hole for a through hole and a step along the periphery of the notch of the resin film with Cu foil, and a cavity is formed in the notch to form a cavity. Forming a step where the element can be mounted;
One surface of the heat sink and the adhesive resin portion of the resin film with Cu foil formed with the notch are directly contacted, and at the same time, the other surface of the heat sink is contacted with Cu foil via a prepreg. Bonding by thermocompression bonding, filling the through hole for the through hole with the adhesive resin and prepreg, and stopping the resin oozing of the adhesive resin at the step; and
After this bonding step, a hole for a through hole is formed so that the wall surface of the through hole for the through hole of the heat sink is covered with the filled adhesive resin and prepreg , and Cu plating is provided in this hole. Forming a film, bringing the Cu foils on the upper and lower surfaces of the heat sink into a conductive state, forming a conductor wiring pattern on the resin film with Cu foil, and forming a conductor wiring pattern on the Cu foil via the prepreg A method of manufacturing a high heat dissipation type plastic package, comprising a step of forming.

A resin film with Cu foil formed by bonding a resin for bonding to a Cu foil, and forming a notch for a cavity for mounting the semiconductor element in a substantially central portion in plan view, and the semiconductor element a metal heat dissipating plate for dissipating heat generated from a method for producing a high heat dissipation plastic package formed by joining directly with the adhesive resin,
Forming a through hole for the through hole in the heat sink and a groove along the periphery of the cutout of the resin film with the Cu foil;
One surface of the heat sink and the adhesive resin portion of the resin film with Cu foil formed with the notch are directly contacted, and at the same time, the other surface of the heat sink is contacted with Cu foil via a prepreg. Bonding by thermocompression bonding, filling the through hole for the through hole with the adhesive resin and prepreg, and stopping the resin oozing of the adhesive resin in the groove; and
After this bonding step, a hole for a through hole is formed so that the wall surface of the through hole for the through hole of the heat sink is covered with the filled adhesive resin and prepreg , and Cu plating is provided in this hole. Forming a film, bringing the Cu foils on the upper and lower surfaces of the heat sink into a conductive state, forming a conductor wiring pattern on the resin film with Cu foil, and forming a conductor wiring pattern on the Cu foil via the prepreg A method of manufacturing a high heat dissipation type plastic package, comprising a step of forming.

A resin film with Cu foil formed by bonding a resin for bonding to a Cu foil, and forming a notch for a cavity for mounting the semiconductor element in a substantially central portion in plan view, and the semiconductor element A heat radiating plate for radiating heat generated from a direct heat bonding with the adhesive resin, and a manufacturing method of a high heat radiation type plastic package,
Pressing the release film onto the cavity part and the resin film with Cu foil using a pressing jig having a convex part that can be fitted into the notch of the resin film with Cu foil;
Heating the adhesive resin to join the Cu foil-attached resin film and the heat sink, and stopping the resin exudation of the adhesive resin with the release film;
A method for producing a high heat dissipation plastic package, comprising removing the pressing jig and removing the release film.

A Cu foil and a Cu plating film are formed by bonding a first adhesive resin to a Cu foil and having a notch for a cavity for mounting a semiconductor element in a substantially central portion in plan view. A first Cu foil-coated resin film on which a first conductor wiring pattern is formed, and the first Cu foil-fitted resin film directly bonded to the lower surface of the first adhesive resin, from the semiconductor element A metal heat radiating plate for radiating the heat generated from the heat radiating member and a lower surface of the heat radiating plate are bonded to each other, and a second adhesive resin is bonded to the Cu foil. A second Cu foil-fitted resin film on which the conductor wiring pattern is formed, and the heat sink is formed with a Cu plating film for electrical conduction between the first and second conductor wiring patterns. It includes a through-hole through holes to be The said inside the through-hole through holes first and second contact adhesive resin is filled at the time of bonding between the first and second Cu foil resin film and the heat radiating plate, said heat radiating plate , a high heat dissipation plastic package carrying the insulation between the first and second Cu plated film conductor wiring patterns and in the through hole in the first and second contact adhesive resin,
The heat radiating plate has a restraining portion for preventing resin seepage during the joining of the resin film with the first Cu foil to the first adhesive resin, and the restraining portion has a clearance in the notch. A high heat radiating plastic package, characterized in that it has a step which can form the cavity portion and mount the semiconductor element.

A Cu foil and a Cu plating film are formed by bonding a first adhesive resin to a Cu foil and having a notch for a cavity for mounting a semiconductor element in a substantially central portion in plan view. A first Cu foil-coated resin film on which a first conductor wiring pattern is formed, and the first Cu foil-fitted resin film directly bonded to the lower surface of the first adhesive resin, from the semiconductor element A metal heat radiating plate for radiating the heat generated from the heat radiating member and a lower surface of the heat radiating plate are bonded to each other, and a second adhesive resin is bonded to the Cu foil. A second Cu foil-fitted resin film on which the conductor wiring pattern is formed, and the heat sink is formed with a Cu plating film for electrical conduction between the first and second conductor wiring patterns. It includes a through-hole through holes to be The said inside the through-hole through holes first and second contact adhesive resin is filled at the time of bonding between the first and second Cu foil resin film and the heat radiating plate, said heat radiating plate , a high heat dissipation plastic package carrying the insulation between the first and second Cu plated film conductor wiring patterns and in the through hole in the first and second contact adhesive resin,
The heat radiating plate has a restraining portion for preventing a resin seepage during the joining of the resin film with the first Cu foil to the first adhesive resin, and the restraining portion is provided at the periphery of the notch. A high heat radiation type plastic package characterized by comprising grooves formed along.