JP3943901B2 - Self-luminous display device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a self-luminous display device configured by using a self-luminous element such as an organic EL (Electro Luminescence) element in which each display pixel is formed on a light-transmitting substrate, and in particular, light from the self-luminous element is emitted. The present invention relates to a self-luminous display device that is taken out through a light-transmitting substrate.
[0002]
[Prior art]
A flat display device typified by a liquid crystal display device is widely used as a display device for a personal computer, an information portable terminal, a television, or the like. Among them, active matrix liquid crystal display devices have been increasing year by year, taking advantage of their thinness, light weight, and low power consumption.
[0003]
An active matrix liquid crystal display device includes, for example, a plurality of display pixels arranged on a matrix, a plurality of scanning lines arranged along rows of these display pixels, and a plurality of signals arranged along columns of these display pixels. A liquid crystal display panel having a plurality of pixel switching elements arranged near the intersections of the lines and the scanning lines and the signal lines, and a driver IC chip mounted on an end of the liquid crystal display panel. And a display control circuit to be controlled. In recent years, in order to reduce the manufacturing cost of the liquid crystal display panel, instead of mounting the driver IC chip described above, the display control circuit is configured by, for example, a MOS thin film transistor like the pixel switching element, and is integrally formed on the liquid crystal display panel. Circuit built-in liquid crystal display panels have been commercialized. Usually, these MOS thin film transistors are classified into an N-channel type in which carriers flowing in the channel region are electrons and a P-channel type in which carriers flowing in the channel region are holes. A circuit is constructed.
[0004]
Recently, organic EL display devices using organic EL elements have attracted attention and are actively researched and developed. While the liquid crystal display element is a passive element that transmits light with a light transmittance according to an applied voltage, the organic EL element is an active element that emits light with brightness according to a current supply amount. Since the organic EL display device uses the organic EL element that emits light in this way, it has the following advantages over a general liquid crystal display device as a flat display device. That is, first, since it is a self-luminous type, a clear display and a wide viewing angle can be obtained, and further, since a backlight is not required, it can be made thinner, lighter, and lower in power consumption. Second, since it responds at high speed, it is suitable for video playback. Thirdly, since the light is emitted by a solid layer, there is a possibility that the operating temperature range is widened.
[0005]
[Problems to be solved by the invention]
In a typical organic EL display device, a plurality of organic EL elements are wired on the gate insulating film covering the light transmissive substrate shown in FIG. 9 and on the interlayer film covering the gate insulating film. Each organic EL element has an anode electrode, an organic EL thin film portion, and a cathode electrode which are stacked on a protective film formed so as to cover the wiring on the interlayer film. The organic EL thin film portion is formed by combining, for example, an anode buffer layer formed on the anode electrode and an organic light emitting layer formed on the anode buffer layer, and is surrounded by a partition film formed on the protective film. In this organic EL display device, the light from the organic EL thin film portion is not only transmitted through the protective film and the interlayer film in the P1 direction shown in FIG. The light propagates in the P0 direction, that is, in the direction of the adjacent pixel, while being reflected at the interface with the partition film and interlayer film having a low refractive index and the interface with the anode electrode. Since about 50% of the light from the organic EL thin film portion propagates in the P0 direction, the light emission efficiency to the outside of the light transmissive substrate is low, and it is difficult to obtain sufficient luminance. In addition, light from the organic EL thin film portion may propagate in a planar manner in the protective film and interfere with light from the light emitting layer having the same emission color.
[0006]
The present invention has been made in view of such circumstances, and an object thereof is to provide a self-luminous display device capable of improving the light emission efficiency to the outside.
[0007]
[Means for Solving the Problems]
According to the present invention, a plurality of light-transmitting dielectric layers formed on a light-transmitting substrate and a plurality of self-light emitting elements that are formed on the dielectric layers and generate light that passes through the dielectric layers are provided. And a display unit that restricts the propagation range of light from one display pixel toward another adjacent display pixel But Provided between one display pixel and another display pixel This structure is constituted by an interface between the dielectric layer and a layer having a refractive index smaller than that of the dielectric layer housed in the groove formed in the dielectric layer. A self-luminous display device is provided.
[0008]
In this self-luminous display device, the dielectric layer is partitioned by a structure that limits the planar propagation range of the light by changing the direction of the light generated by each self-luminous element and propagating through the dielectric layer. As a result, part of the light propagating in a plane in the dielectric layer is emitted to the outside of the dielectric layer, so that the light emission efficiency to the outside can be improved and high luminance can be obtained. It becomes. Further, it is also possible to avoid light propagating in a plane in the dielectric layer from interfering between self-light emitting elements having the same emission color.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an organic EL display device according to an embodiment of the present invention will be described with reference to the drawings.
[0010]
FIG. 1 shows a circuit configuration example of the entire organic EL display device. This organic EL display device includes an organic EL panel PNL and an external drive circuit DRV.
[0011]
The external drive circuit DRV receives data output from a signal source such as a personal computer, and generates a control signal for driving the organic EL panel PNL and performs digital processing such as rearrangement of video signals. A plurality of driver ICs 2 for digital / analog conversion of video signals, and a DC / DC converter 3 for generating a controller unit 1, a driver IC 2, a driving power supply voltage for the organic EL panel PNL, and the like.
[0012]
The organic EL panel PNL includes a signal line driving circuit 5 that samples a video signal supplied from the external driving circuit DRV to a corresponding signal line, a scanning line driving circuit 6 that outputs a scanning signal to the scanning line at a predetermined timing, and a display region 7. In the display area 7, a plurality of display pixels PX are arranged in a matrix, a plurality of signal lines X (X1 to Xm) are arranged along a row of the plurality of display pixels PX, and a plurality of scanning lines Y (Y1 to Yn). ) Are arranged along the columns of the plurality of display pixels PX. Three display pixels PX adjacent to each other in the row direction constitute one color display pixel, and emit light having wavelengths corresponding to red, green, and blue, respectively. Each display pixel PX includes, for example, an N-channel thin film transistor N11 as a switching element assigned to the corresponding signal line X and corresponding scanning line Y, a video signal voltage holding capacitor C11, and a P-channel thin film transistor P11 as an organic EL element driving element. And an organic EL element OLED. The organic EL element OLED is connected in series with the P-channel type thin film transistor P11 between the first power supply line Vdd and the second power supply line Vss. The N-channel thin film transistor N11 takes in the video signal on the signal line X by controlling the scanning signal supplied from the scanning line Y, and applies it to the gate of the P-channel thin film transistor P11. The video signal voltage holding capacitor C11 is formed between the first power supply line Vdd and the gate of the P-channel type thin film transistor P11, and holds the video signal while the thin film transistor N11 is non-conductive.
[0013]
Next, a method for driving each display pixel PX will be described. FIG. 2 shows a circuit configuration of the display pixel PX as an example, and FIG. 3 shows an operation waveform of this circuit.
[0014]
Since the N-channel thin film transistor N11 is in an active state during the period when the scanning signal Vscan of the scanning line Y is at a high level, the video signal voltage Vsig of the signal line X is applied to one end side electrode of the capacitor C11 via the N-channel thin film transistor N11. Applied to charge this capacitor C11. Note that the voltage finally held by the one end side electrode of the video signal voltage holding capacitor C11 is the video signal voltage Vsig set to the signal line X when the scanning signal Vscan of the scanning line becomes low level. . Since one end side electrode of the video signal voltage holding capacitor C11 is further connected to the gate electrode G of the P-channel type thin film transistor P11 and the other end side electrode is connected to the source electrode S of the P-channel type thin film transistor P11, the video signal voltage The voltage charged in the holding capacitor C11 becomes the gate-source voltage Vgs of the P-channel type thin film transistor P11.
[0015]
Since the drain-source current Ids of the P-channel type thin film transistor P11 is increased or decreased by the gate-source voltage Vgs and Ids = IEL, the current IEL flowing through the organic EL element OLED is changed by the video signal voltage Vsig, and the desired luminance is obtained. Can emit light.
[0016]
FIG. 4 shows a planar structure of one color pixel of the organic EL panel. As shown in FIG. 4, the display pixel PX is formed in a region surrounded by the scanning line Y and the signal line X, and an N-channel type thin film transistor N11 is arranged near the intersection of the scanning line Y and the signal line X. The source electrode S of the N channel type thin film transistor N11 is connected to the signal line X, the gate electrode G is connected to the scanning line Y, and the drain electrode D is connected to the gate electrode G of the P channel type thin film transistor P11. A node ND between the drain electrode D of the thin film transistor N11 and the gate electrode G of the thin film transistor P11 also serves as a capacitor electrode that is capacitively coupled to the first power supply line Vdd and forms a storage capacitor. This storage capacitor is provided as a video signal voltage holding capacitor C11 for holding a video signal voltage applied to the gate electrode G of the P-channel type thin film transistor P11. The source electrode S of the P-channel type thin film transistor P11 is connected to the first power supply line Vdd for driving the organic EL element OLED, and the other drain electrode D is connected to the first electrode of the organic EL element OLED, here the anode electrode AD. .
[0017]
5 shows a cross section taken along the line VV shown in FIG. 4, and FIG. 6 shows a cross section taken along the line VI-VI shown in FIG. As shown in FIGS. 5 and 6, the organic EL panel PNL has a structure in which thin film transistors P11 and N11 and an organic EL element OLED are sequentially laminated on a light-transmissive insulating substrate 10 such as glass. The glass substrate 10 may be replaced with a substrate such as an insulating material such as a synthetic resin, a conductive material, or a semiconductor. However, when a conductive material or a semiconductor is used, the substrate 10 is made of SiO. ₂ It is necessary to cover with an insulating film such as SiN or the like, and to form the thin film transistors P11 and N11 and the organic EL element OLED on the insulating film. Each of the N-channel type thin film transistor N11 and the P-channel type thin film transistor P11 is a top gate type in which the gate electrode G is provided above the semiconductor layer PS via the gate insulating film 11. The semiconductor layer PS is, for example, a polysilicon (Poly-Silicon) thin film formed on the glass substrate 10 as an island-shaped active layer, and has a channel region disposed at a position corresponding to the gate electrode G and an impurity having a predetermined concentration. It has source and drain regions which are included conductive regions. The gate insulating film 11 is formed so as to cover the glass substrate 10 together with the semiconductor layers PS of the thin film transistors P11 and N11. Capacitance electrodes of the scanning line Y and the video signal voltage holding capacitor C11 are formed on the gate insulating film 11 with the same material together with the gate electrodes G of the thin film transistors P11 and N11. For example, the interlayer electrode 12 made of SiOx having a refractive index of 1.5. Covered. The source electrode S, the drain electrode D, and the first power supply line Vdd of the thin film transistors P11 and N11 are formed on the interlayer film 12. The interlayer film 12 has a plurality of contact holes that partially expose the source and drain regions of the semiconductor layer PS and the capacitor electrode of the video signal voltage holding capacitor C11, and the source and drain electrodes S and D of the thin film transistors P11 and N11. Are connected to the source region and the drain region of the semiconductor layer PS through these contact holes. The drain electrode D of the N-channel type thin film transistor N11 is connected to the capacitor electrode of the video signal voltage holding capacitor C11. The source electrode S, the drain electrode D, and the first power supply line Vdd of the thin film transistors P11 and N11 are covered with a protective film 13 made of, for example, SiNx having a refractive index of 1.9.
[0018]
The organic EL element OLED has a structure in which the organic EL thin film portion 14 is held between a first electrode serving as a light extraction electrode and a second electrode disposed opposite to the first electrode. In this embodiment, the first electrode is an anode electrode AD, which is made of a transparent electrode material such as ITO (Indium Tin Oxide) having a refractive index of 2.0, and is formed in an island shape on the protective film 13. The organic EL thin film portion 14 is formed by combining, for example, an anode buffer layer BF formed on the anode electrode AD and an organic light emitting layer EM formed on the anode buffer layer BF. The electrode is surrounded by a partition film 15 made of an organic material having a refractive index of 1.4, for example, which partially or entirely exposes the electrode. Here, the second electrode is a cathode electrode CD, which is made of, for example, a barium-aluminum alloy, and is continuously formed on the light emitting layer EM as a wiring metal layer in common for all pixels. In the organic EL element OLED, when the holes injected from the anode electrode AD and the electrons injected from the cathode electrode CD recombine inside the organic EL thin film portion 14, the organic molecules are excited to generate excitons. Let This exciton emits light in the process of radiation deactivation, and this light is emitted from the organic EL thin film portion 14 to the outside through the anode electrode AD having transparency and the transparent insulating substrate 10.
[0019]
In the organic EL display device having the above structure, the partition film 15 that electrically insulates these first electrodes is disposed between adjacent display pixels, and the second electrode provided in common as the second electrode of all the display pixels. Is configured so as to cover the partition film 15, the taper angle of the inner surface of the opening of the partition film 15 can be controlled, and light traveling toward the adjacent display pixel can be extracted to the light emitting surface side. That is, it is possible to take out from the P3 direction after being transmitted and diffracted and totally reflected by the cathode electrode CD.
[0020]
Further, in this organic EL display device, the protective film 13 is generated from the organic EL thin film portion 14 of each organic EL element OLED and the direction of light propagating through the protective film 13 is changed to limit the planar propagation range of this light. It is divided by the structure part. This structural part is composed of, for example, an optical path changing surface formed between adjacent display pixels, and a layer having a refractive index smaller than that of the protective film 13 disposed in close contact with the protective film 13 through the optical path changing surface. It is formed on the same plane as the protective layer. Here, it is constituted by a groove GR formed in the protective film 13 between display pixels adjacent in the row direction and between display pixels adjacent in the column direction, and a part of the partition film 15 accommodated in the groove GR. That is, here, the inner wall surface of the groove GR forms an optical path changing surface, and a part of the partition film forms a layer having a refractive index smaller than that of the protective layer. As shown in FIG. 4, the grooves GR arranged in the direction parallel to the signal lines are respectively arranged between the display pixels, and the grooves GR arranged in the direction parallel to the scanning lines are continuously connected to the pixels in the row direction. Arranged.
[0021]
Since the partition film 15 is made of a material having a refractive index lower than that of the protective film 13, the light from the organic EL thin film portion 14 passes through the protective film 13 and is not emitted to the outside from the P1 direction, and has a refractive index of 1.9. Even if it is reflected at the interface between the protective film 13 and the interlayer film 12 having a refractive index of 1.5 and propagates through the protective film 13 toward the adjacent display pixel, it is refracted with the partition film 15 having a refractive index of 1.4 that forms the structure portion. It is reflected at the interface of the protective film 13 with a rate of 1.9 and can be emitted to the outside from the P2 direction.
[0022]
That is, since light can be emitted from the P2 direction and the P3 direction in addition to the P1 direction, the light emission efficiency to the outside can be improved and high luminance can be obtained in the display panel PNL.
[0023]
As in this embodiment, an anode electrode AD made of ITO having a high refractive index of 2.0 is used, and a protective film 13 having a high refractive index of 1.8 or more is disposed immediately below the anode electrode AD. When the structure portion was provided so that the refractive index of the film 13 was discontinuous between the display pixels PX, the light emission efficiency could be increased by about 15%.
[0024]
In the present embodiment, the inclined surface of the groove GR, which is the interface between the protective film 13 and the partition wall film 15 that reflects / transmits and diffracts the light reflected and incident at the interface between the protective film 13 and the interlayer film 12, is different from the inclined surface. A reverse taper in which the angle θ formed with the plane of the substrate 10 is 90 ° or more is preferable in order to improve luminance, but a considerable effect can be obtained even if the angle θ is less than 90 °.
[0025]
As described above, according to the present invention, a self-luminous display device with improved light extraction efficiency to the light exit surface can be realized. Light from one color pixel of red, blue, and green can be prevented from traveling toward the color pixel adjacent thereto, and color mixing between adjacent color pixels can be suppressed. In binary display such as red-white, blue-white, and green-white, crosstalk between adjacent pixels can be suppressed and contrast can be improved.
[0026]
In this embodiment, the first electrode is the anode electrode AD and the second electrode is the cathode electrode CD. However, the cathode electrode CD may be the first electrode and the anode electrode AD may be the second electrode. In either case, it is necessary to form the light emitting surface side with a transparent conductive material. For example, when the cathode electrode CD is disposed on the light emitting surface side, alkaline earth metal and rare earth metal are light-transmitting. This can be achieved by forming a thin film.
[0027]
Here, a method for manufacturing the self-luminous display device will be described.
[0028]
First, a glass substrate 10 with one main surface undercoated is prepared. For example, a polysilicon film having a thickness of 50 nm is formed on the undercoat surface of the glass substrate 10. Here, P-type impurities may be implanted at a low concentration into the entire surface of the polysilicon film. The semiconductor layer PS of the thin film transistors P11 and N11 is formed by patterning this polysilicon film.
[0029]
Next, a SiOx film having a thickness of 80 nm is formed as a gate insulating film 11 that covers the entire surface of the polysilicon semiconductor layer PS and the undercoat layer. A resist film is formed to expose the semiconductor layer and cover the entire surface of the semiconductor layer PS constituting the P-type thin film transistor, and n-type impurities such as phosphorus are implanted into the semiconductor layer PS at a high concentration using this resist film as a mask.
[0030]
After peeling off the resist film, MoW is deposited on the gate insulating film 11 with a thickness of 300 nm. The gate electrode G and the capacitor electrode of the P-type thin film transistor are formed by patterning the resulting MoW layer. At this time, the semiconductor layer PS of the N-type thin film transistor and the semiconductor layer of the storage capacitor of the peripheral circuit are covered with the MoW layer.
[0031]
Next, a P-type impurity such as boron is implanted into the polysilicon semiconductor layer PS constituting the P-type thin film transistor through the gate insulating film 11 by ion implantation using the gate electrode G as a mask. A source region and a drain region are formed as conductive regions in a region excluding the channel region.
[0032]
Next, MoW is patterned to form the gate electrode G of the N-type thin film transistor and the upper electrode of the storage capacitor of the peripheral circuit. The gate electrode G of the N-type thin film transistor is formed narrower than the conductive region. Then, an N-type impurity is implanted at a low concentration using this gate electrode as a mask to form an LDD region between the channel region and the source / drain regions.
[0033]
Next, a SiOx film having a thickness of 400 nm is formed as an interlayer film 12 covering the gate electrode G, the capacitor electrode, and the gate insulating film 11. Subsequently, a plurality of contact holes are formed so as to penetrate the interlayer film 12 to expose the capacitor electrode and to penetrate the interlayer film 12 and the gate insulating film 11 to expose the source region and the drain region of the semiconductor layer PS. Further, for example, Mo with a thickness of 50 nm, Al with a thickness of 450 nm, and Mo with a thickness of 100 nm are stacked on the interlayer film 12. These stacked metal layers are patterned so as to leave the source electrode S and drain electrode D in contact with the source region and drain region of the semiconductor layer PS, the first power supply line Vdd, the signal line X, and the like through the contact holes.
[0034]
Next, for example, a SiNx film having a thickness of 450 nm is formed as the protective film 13 covering the interlayer film 12 together with the source electrode S, the drain electrode D, the power supply line Vdd, the signal line X, and the like. Next, a contact hole that exposes the drain electrode D of the thin film transistor P11 disposed as an organic EL driving element is formed in the protective film 13 by dry etching, and at the same time, a groove GR of the structure portion is formed. The groove GR is configured to partially expose the signal line and the first power supply line VDD.
[0035]
At this time, the contact hole and the groove GR are inclined such that the inner side surface of the opening is 90 ° or more with respect to the glass substrate 10. By forming in this way, it becomes possible to effectively prevent ITO from breaking in the contact hole.
[0036]
Subsequently, for example, ITO (Indium Tin Oxide) is formed in an island shape as a first electrode that contacts the source electrode D of the thin film transistor P11 through this contact hole.
[0037]
Next, for example, an acrylic resin layer having a thickness of 3000 nm is formed to cover the first electrode and the protective film 13. Here, the groove GR of the protective film 13 is closed by the acrylic resin layer accommodated in the groove GR.
[0038]
In this way, the above-described structure portion is formed by the groove GR formed in the protective film 13 and the acrylic resin layer accommodated in the groove. Since the trench GR and the contact hole are formed in the same step, the structure portion can be formed without increasing the number of processes.
[0039]
Thereafter, the acrylic resin layer is patterned so as to form an opening OP on the first electrode, and is left as the partition wall film 15. The opening OP has a tapered shape having an inner wall inclined toward the first electrode, and an end portion of the first electrode is covered with a partition film 15 in order to prevent a short circuit with the second electrode.
[0040]
Next, a process of forming the organic EL thin film portion 14 and the second electrode on the first electrode will be described. Here, the first electrode forms the anode electrode AD. In the opening OP of the partition wall film 15, an anode buffer layer BF made of a hole transport layer or a hole injection layer is formed on the anode electrode AD, and an organic light emitting layer EM is stacked on the anode buffer layer BF. Further, barium-aluminum alloy is formed to cover the organic light emitting layer EM and the partition wall film 15 as a wiring metal layer commonly connected to all the organic EL elements OLED. That is, the wiring metal layer constitutes the second electrode (here, the cathode electrode CD) in a region in contact with each organic light emitting layer EM.
[0041]
Thus, since the above-mentioned structure part can be formed without adding a complicated manufacturing process, the light emission efficiency can be increased very easily.
[0042]
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.
[0043]
FIG. 7 shows a first modification of the display pixel peripheral structure shown in FIG. In the above-described embodiment, the light reflected at the interface (optical path changing surface) between the protective film 13 and the interlayer film 12 is reflected / transmitted using the difference in refractive index, but all the light propagating in the lateral direction. Is difficult to emit from the display surface of the substrate 10. Focusing on this, in this modification, the light propagating in the lateral direction in the protective film 13 is totally reflected by the structure portion formed on the same plane as the protective film 13 and is emitted from the P2 direction to the outside. That is, this structure part is configured by an optical path changing surface formed between adjacent display pixels PX and a reflective metal film disposed in close contact with the protective film 13 via the optical path changing surface. Here, each organic EL element OLED is constituted of a groove GR formed in the protective film 13 around the organic EL element OLED and a reflective metal film 16 covering at least the inner wall of the groove GR. With this configuration, the number of processes for forming the reflective metal film 16 is increased, but the light emission efficiency to the outside can be increased as compared with the embodiment shown in FIG.
[0044]
FIG. 8 shows a second modification of the display pixel peripheral structure shown in FIG. When the organic EL element OLED is of a general polymer type that is formed by an inkjet method, the hydrophilic film 17 is formed as a base of the partition film 15 and extends into the opening OP. In such a case, as shown in FIG. 8, the structural portion is constituted by a groove GR formed in the protective film 13 around each organic EL element OLED and a hydrophilic film 17 covering at least the inner wall of the groove GR. Since the refractive index of the hydrophilic film 17 is about 1.4, it can function in the same manner as the above-described embodiment.
[0045]
Further, the first and second modifications described above may be used in combination. Furthermore, the hydrophilic layer 17 may be formed only at the lower end portion of the opening OP adjacent to the first electrode.
[0046]
In the above-described embodiment, the groove GR is disposed on the signal line X and the first power supply line Vdd. However, the groove GR may be disposed on any of the signal line X, the scanning line Y, and the first power supply line Vdd. . Further, since interference of light propagating in the lateral direction is negligible in the same color pixel, for example, three organic EL elements OLED that emit light in red, green, and blue as a color pixel are surrounded in a plane. Or you may form several groove | channel GR so that it may pinch | interpose.
[0047]
In the above-described embodiment, the organic EL display device has been described. However, the present invention can be applied to all self-luminous display devices that emit light to the substrate side on which wirings and the like are formed to obtain the same effect. Is possible.
[0048]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a self-luminous display device capable of improving the light emission efficiency to the outside.
[Brief description of the drawings]
FIG. 1 is a circuit diagram illustrating a configuration example of an entire organic EL display device according to an embodiment of the present invention.
2 is a circuit diagram showing a configuration of a display pixel shown in FIG. 1. FIG.
3 is a waveform diagram showing circuit operation of the display pixel shown in FIG. 2. FIG.
4 is a diagram showing a planar structure of one color pixel of the organic EL panel shown in FIG. 2. FIG.
5 is a cross-sectional view taken along line VV shown in FIG.
6 is a cross-sectional view taken along line VI-VI shown in FIG.
7 is a cross-sectional view showing a first modification of the display pixel peripheral structure shown in FIG.
8 is a cross-sectional view showing a second modification of the display pixel peripheral structure shown in FIG.
FIG. 9 is a cross-sectional view showing a display pixel peripheral structure of a conventional EL display device.
[Explanation of symbols]
10: Light transmissive substrate
13 ... Protective film
15 ... partition wall film
16 ... Reflective metal film
17 ... hydrophilic membrane
OLED ... Organic EL device
PX ... Display pixel
GR ... groove

Claims (3)

A light-transmitting dielectric layer formed on the light-transmitting substrate; and a plurality of display pixels each including a self-light emitting element that is formed on the dielectric layer and generates light that passes through the dielectric layer. provided between the structure portion is the one display pixel and the other display pixels to limit the propagation range of light directed to other display pixels adjacent the first display pixel, the dielectric the structure and the dielectric layer A self-luminous display device comprising an interface with a layer having a refractive index smaller than that of the dielectric layer housed in a groove formed in the layer .   The self light emitting display device further includes a partition film surrounding the plurality of self light emitting elements on the dielectric layer, and the partition film is covered with a wiring metal layer commonly connected to the plurality of self light emitting elements. The self-luminous display device according to claim 1. The self-luminous display device according to claim 2 , wherein a layer having a refractive index smaller than that of the dielectric layer also serves as the partition wall film.

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